CN112420876B - 一种从日盲紫外到近红外的宽波段探测器的制备方法 - Google Patents
一种从日盲紫外到近红外的宽波段探测器的制备方法 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title description 10
- 239000000463 material Substances 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000012212 insulator Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 19
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 16
- 239000010980 sapphire Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000012546 transfer Methods 0.000 claims abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000000313 electron-beam-induced deposition Methods 0.000 claims abstract description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 24
- 230000004044 response Effects 0.000 abstract description 11
- 238000001228 spectrum Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910017629 Sb2Te3 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- UFEHSYWUPMDJLU-UHFFFAOYSA-N cadmium(2+) indium(3+) sulfide Chemical compound [S-2].[Cd+2].[In+3] UFEHSYWUPMDJLU-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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Abstract
一种从日盲紫外到近红外的宽波段探测器的制备方法,属于光电探测技术领域。本发明的目的是为了解决现有宽光谱探测器存在不同材料之间晶格失配大、质量低、响应速度慢等问题,所述方法为:在蓝宝石衬底上沉积Ga2O3薄膜,薄膜厚度不小于300nm,通过化学气相沉积法在蓝宝石基底上制备厚度为3nm‑6nm的二维拓扑绝缘体材料,将所述二维拓扑绝缘体材料通过湿法转移的方法转移至Ga2O3上表面,Ga2O3和二维拓扑绝缘体材料之间形成范德华异质结;利用电子束沉积的方法在二维拓扑绝缘体材料表面依次沉积Ti电极和Au电极。本发明采用范德华异质结,通过转移的方法形成异质结,而不是外延方法,克服了Ga2O3和Bi2Se3之间晶格失配而导致质量下降等问题。
Description
技术领域
本发明属于光电探测技术领域,具体涉及一种从日盲紫外到近红外的宽波段探测器的制备方法。
背景技术
宽波段探测器自20世纪被提出以来,在国内外都得到了巨大的发展,但目前宽波段探测器仍然没有很好的普及,其中晶格不匹配带来的紫外-红外光敏材料或探测系统集成困难、集成器件后红外探测系统的探测性能弱,以及双色集成探测器结构复杂等问题成为限制其发展的主要原因。
第一次实际运用紫外-红外双色探测器是在1977年,在战争中运用的“尾刺”导弹,其导引头上就安装了硫化镉-锑化铟(CdS/InSb)探测器,称为紫外-红外双波段探测器,但当时集成技术不完善,实际上还是两个独立的探测器。而国内最早出现则是1987年张烽生等人设计研究出的p+/p/n结构硅光伏探测器,其采用的p+/p前表面高低结能够有效地减少表面损失和增大日盲紫外波段的响应率,同时也大大减少了表面发射区的复合电流分量,所制备器件应用光谱范围为190-1150nm。总的来说早期关于宽波段探测器的研究,由于集成技术限制、高质量日盲紫外光敏材料制备困难等原因,还只处于初步探索阶段。
进入21世纪的近20年来,宽波段探测器技术得到了较快发展。高晶体质量日盲紫外光敏材料的生长外延问题被逐渐解决,新的日盲紫外光敏材料在不断地涌现,如氧化物材料和III族氮化物材料等,研究人员在日盲紫外光敏材料的选择上逐渐拓宽了视线,但目前红外探测技术由于量子效率低、工作温度低等原因仍然制约着宽波段探测器的发展。
二维拓扑绝缘体材料Bi2Se3、Bi2Te3、Sb2Te3等多种类的二维体系。这些二维材料的光电探测器与传统光探测器相比也显示了独特的优势,获得了高的探测率、高响应度以及高的响应速度。尤其在长波红外和太赫兹领域具有优势,相比与传统的HgCdTe或InAs/GaSbII类超晶格探测器可在室温工作,无需制冷,探测率可超越背景限。
通过范德华力将宽带隙半导体氧化镓(Ga2O3)与二维拓扑绝缘体(2DTopologicalInsulator)材料结合起来,利用各自材料在带隙和性能方面的互补性,构建异质结,通过增大吸收率、调控界面和层数、提高载流子分离和传输实现高灵敏度、高响应速度的超宽谱段探测器。
这种范德华异质结可避免两种材料由于晶格失配引起的质量下降的问题,并且可以在室温工作,可以实现覆盖从日盲紫外到红外的宽波段探测材料和器件。
传统半导体光探测器主要基于半导体的带隙进行光响应的波段选择,很难找到一种材料兼顾多谱段高灵敏度探测,因此需利用不同带隙的半导体材料构建异质结,从而实现多谱段探测。在材料制备过程需考虑材料带隙、晶格失配、热失配等多种因素才能获得高质量的探测材料。相比于传统块体和薄膜探测材料,二维材料通过范德华力链接材料,可以克服晶格失配带来的质量退化问题,便于被设计成范德华异质结结构,极大拓展了器件的可设计性,可以更加灵活的构建异质结和新型器件结构。针对不同材料的能带结构和特性,可选择结构匹配,功能互补的材料设计异质结以实现性能更优异的光电探测器。在材料制备和器件制备以及材料的改性掺杂等方面,二维材料制备方法简单,也更加灵活,往往可以创造出新的材料或者得到一些新颖的性能。
传统半导体光探测器往往需要一定的厚度来保证足够的光吸收,尤其是红外光探测器,光吸收层需要几个微米,甚至十几个微米的厚度才可实现足够的红外光吸收。二维材料虽然只有几个原子层的厚度,却较之半导体薄膜具有更高的吸收效率,因此二维材料光探测器往往具有较高的探测率和响应度,可实现超越背景限的探测率。
氧化镓(Ga2O3)是一种超宽带隙半导体,禁带宽度为4.9eV,远大于氮化镓和碳化硅的带隙,在日盲探测和功率器件领域都有广泛的应用;氧化镓和硒化铋(Bi2Se3)等二维拓扑绝缘体范德华异质结结构集成了多种材料的优点,取长补短,克服单一材料的缺陷,甚至会由于材料间独特的耦合机制而发挥出原有材料所不具备的新颖特性,有望能在光探测领域获得较大的突破,以满足以上所提出的实际应用需求。
二维Bi2Se3材料因其优异的物理特性,在光电探测领域颇具优势,尤其是在室温中、长波红外探测方面有着良好的前景,器件响应时间也可以降低到皮秒量级,适用于太赫兹频率的超快光通讯和光互连场合。然而,二维Bi2Se3材料较小的带隙导致较大的暗电流,不利于施加大的偏压,明显制约了器件响应度的提升。以往报道的各种特殊结构设计,虽然能够提高探测器的响应度,但是却不能同时兼顾宽波段响应和超快响应速度,而在兼顾探测器的宽光谱和超快响应的前提之下,将灵敏度提高到实用化水平,是难以突破的技术瓶颈。
专利(CN202010525007.0)一种硅基宽光谱光电探测器的制备方法,利用硅和可见光的量子点形成异质结实现可见到红外的宽光谱探测器,制备方法复杂,且只覆盖可见到红外区。专利(CN201920378820.2)利用Si光敏半导体和PbSe光敏半导体使用双通道探测,实现可见到红外的探测,实际上是两个独立的探测器。专利(CN201811067522.8)一种基于拓扑绝缘体硒化铋电极的钙钛矿薄膜的宽波段光电探测器及其制备方法,主要利用作为拓扑绝缘体硒化铋电极材料而不是光敏层,专利中利用钙钛矿材料实现宽波段的探测器。
到目前为止,商业化的光电探测器主要以传统半导体材料(Si、III-V族、II-VI族等化合物半导体)为主。虽然现在已有适用于不同波长的半导体探测器,但受光电探测材料带隙限制,传统半导体材料的光电探测能力往往只能覆盖一定波长区域,并且需要根据不同场合和环境做选择以及切换,在具体的应用中有诸多不便。此外,在红外和太赫兹波段由于传统材料HgCdTe、锑化物超晶格构成的器件较难抑制暗电流,器件只有在制冷的情况下才能获得较高的灵敏度,额外的制冷设备增大了探测系统的成本、体积和功耗,这与光电探测器低成本、小型化、低功耗的发展理念不符。因此,利用单一材料结构实现非制冷、宽波段光电响应,是目前宽波段探测器发展亟待解决的问题。
发明内容
本发明的目的是为了解决现有宽光谱探测器存在不同材料之间晶格失配大、质量低、响应速度慢等问题,提供一种从日盲紫外到近红外的宽波段探测器的制备方法。本发明的探测器由Ga2O3、二维拓扑绝缘体材料和电极组成,将宽带隙半导体Ga2O3与二维拓扑绝缘体材料形成范德华异质结,首先可以避免不同半导体材料外延的晶格失配,其次,Ga2O3带隙宽,光响应区域位于日盲波段,同时形成异质结后,可有效降低暗电流,二维拓扑绝缘体材料由于特殊的材料特性,在低能耗高速光响应特性,二者的范德华异质结可实现响应速度快、响应度高的宽光谱探测器。
为实现上述目的,本发明采取的技术方案如下:
一种从日盲紫外到近红外的宽波段探测器的制备方法,所述方法具体步骤为:
步骤一:在蓝宝石衬底上沉积Ga2O3薄膜,薄膜厚度不小于300nm,所述沉积方法为分子束外延、磁控溅射或激光脉冲沉积中的一种;
步骤二:通过化学气相沉积法在蓝宝石基底上制备厚度为3nm-6nm的二维拓扑绝缘体材料,将所述二维拓扑绝缘体材料通过湿法转移的方法转移至Ga2O3上表面,Ga2O3和二维拓扑绝缘体材料之间形成范德华异质结;
步骤三:利用电子束沉积的方法在二维拓扑绝缘体材料表面依次沉积Ti电极和Au电极形成Ti/Au电极,Ti层厚度为50-150nm,Au层厚度为200-400nm。
本发明相对于现有技术的有益效果为:
1.采用范德华异质结,通过转移的方法形成异质结,而不是外延方法,方法简单,成本低,易推广;
2.工艺成熟,简单,克服了Ga2O3和二维拓扑绝缘体材料之间晶格失配而导致质量下降等问题。
附图说明
图1为Ga2O3/Bi2Se3宽光谱探测器结构示意图;
其中,1-衬底,2-Ga2O3,3-二维Bi2Se3,4-电极;
图2为Ga2O3/Bi2Se3宽光谱探测器响应光谱图。
具体实施方式
下面结合附图和实施例对本发明的技术方案作进一步的说明,但并不局限于此,凡是对本发明技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,均应涵盖在本发明的保护范围中。
本发明通过宽带隙半导体Ga2O3与二维拓扑绝缘体材料形成范德华异质结的宽光谱探测器首先实现了从日盲到红外的宽光谱探测器,克服了Ga2O3与二维拓扑绝缘体材料各自材料的弱点,实现宽光谱,高灵敏,快速响应的探测器。
本发明包括利用Ga2O3薄膜作为基底材料,将二维拓扑绝缘体材料转移到Ga2O3的表面上,制成Ga2O3/二维拓扑绝缘体材料范德华异质结,然后在异质结上通过蒸镀电极,通过在电极上施加不同极性和大小的电压,实现不同波段的探测。该方案克服了不同半导体材料外延时,由于晶格常数不同导致的晶体质量差,探测率低的问题。本方案采用范德华异质结方法,制备方法简单易于实现,易于推广。
具体实施方式一:本实施方式记载的是一种从日盲紫外到近红外的宽波段探测器的制备方法,所述方法具体步骤为:
步骤一:在蓝宝石(Al2O3)衬底上沉积Ga2O3薄膜,薄膜厚度不小于300nm,所述沉积方法为分子束外延、磁控溅射或激光脉冲沉积中的一种;
步骤二:通过化学气相沉积法在蓝宝石基底上制备厚度为3nm-6nm的二维拓扑绝缘体材料,将所述二维拓扑绝缘体材料通过湿法转移的方法转移至Ga2O3上表面,Ga2O3和二维拓扑绝缘体材料之间形成范德华异质结;二维拓扑绝缘体材料厚度小于6nm具有优异的性能,因此控制厚度为3-6nm。
步骤三:利用电子束沉积的方法在二维拓扑绝缘体材料表面依次沉积Ti电极和Au电极形成Ti/Au电极,Ti层厚度为50-150nm,Au层厚度为200-400nm。
具体实施方式二:具体实施方式一所述的一种从日盲紫外到近红外的宽波段探测器的制备方法,步骤二中,所述湿法转移具体为:将表面涂有100~200nmPMMA的化学气相沉积法生长的蓝宝石(Al2O3)基二维拓扑绝缘体材料浸泡于KOH中,以腐蚀掉蓝宝石(Al2O3)基底;然后,采用载玻片将样品捞出并放入去离子水的培养皿中,重复3次以去除残留的KOH;最后,使用步骤一中的氧化镓薄膜,依次把二维拓扑绝缘体材料从下而上捞起,晾干后,放入丙酮溶液中,以去除PMMA。
具体实施方式三:具体实施方式一或二所述的一种从日盲紫外到近红外的宽波段探测器的制备方法,所述二维拓扑绝缘体材料为Bi2Se3、Bi2Te3、Bi2Se3-xTex或Bi2OSe2中的一种。
实施例1:
本发明衬底采用蓝宝石衬底,采用磁控溅射方法制备氧化镓Ga2O3薄膜,与Bi2Se3形成范德华异质结的宽光谱探测器。
1.取一蓝宝石衬底,经RCA标准清洗法清洗蓝宝石衬底。
2.取清洗好的蓝宝石衬底,放入磁控溅射设备生长室,选用99.9%的氧化镓靶材,将衬底温度升至600℃,生长过程中射频功率为180W,氧气和氩气比例6:34,溅射压强为1Pa。溅射时间2小时,完成后,关闭靶材转动和加热系统,冷却得到氧化镓薄膜。
3.将表面涂有100nmPMMA的化学气相法生长在蓝宝石(Al2O3)衬底上的Bi2Se3二维材料浸泡于KOH中,以腐蚀掉蓝宝石(Al2O3)基底;然后,采用载玻片将样品捞出并放入去离子水的培养皿中,重复3次以去除残留的KOH;最后,使用步骤一中的氧化镓薄膜,依次把Bi2Se3从下而上捞起,晾干后,放入丙酮溶液中,以去除PMMA。
4.将步骤3获得Ga2O3薄膜Bi2Se3异质结放入电子束蒸发设备,通过掩膜版蒸镀得到Ti/Au电极,Ti层的厚度为100nm,Au层厚度为300nm,获得Ga2O3/Bi2Se3范德华异质结的从日盲紫外到近红外的宽光谱探测器,如图1所示。
本实施例制备的是Ga2O3和Bi2Se3范德华异质结宽光谱探测器,也同样适用于与Bi2Se3同为六族铋化物的Bi2Te3材料,或者为二者的合金材料Bi2Se3-xTex和Bi2OSe2等材料。
5.在上一步制备的两个电极之间提供偏置电压的电压源,调控碲化铋-石墨烯异质结中载流子的输运能力,进而实现宽光谱的探测,效果如图2所示。
Claims (3)
1.一种从日盲紫外到近红外的宽波段探测器的制备方法,其特征在于:所述方法具体步骤为:
步骤一:在蓝宝石衬底上沉积Ga2O3薄膜,薄膜厚度不小于300nm,所述沉积方法为分子束外延、磁控溅射或激光脉冲沉积中的一种;
步骤二:通过化学气相沉积法在蓝宝石基底上制备厚度为3nm-6nm的二维拓扑绝缘体材料,将所述二维拓扑绝缘体材料通过湿法转移的方法转移至Ga2O3上表面,Ga2O3和二维拓扑绝缘体材料之间形成范德华异质结;
步骤三:利用电子束沉积的方法在二维拓扑绝缘体材料表面依次沉积Ti电极和Au电极形成Ti/Au电极,Ti层厚度为50-150nm,Au层厚度为200-400nm。
2.根据权利要求1所述的一种从日盲紫外到近红外的宽波段探测器的制备方法,其特征在于:步骤二中,所述湿法转移具体为:将表面涂有100~200nm PMMA的化学气相沉积法生长的蓝宝石基二维拓扑绝缘体材料浸泡于KOH中,以腐蚀掉蓝宝石基底;然后,采用载玻片将样品捞出并放入去离子水的培养皿中,重复3次以去除残留的KOH;最后,使用步骤一中的氧化镓薄膜,依次把二维拓扑绝缘体材料从下而上捞起,晾干后,放入丙酮溶液中,以去除PMMA。
3.根据权利要求1或2所述的一种从日盲紫外到近红外的宽波段探测器的制备方法,其特征在于:所述二维拓扑绝缘体材料为Bi2Se3、Bi2Te3、Bi2Se3-xTex或Bi2OSe2中的一种。
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