CN112414615B - Ultrahigh voltage sputtering resistant film pressure transmitter and manufacturing method thereof - Google Patents
Ultrahigh voltage sputtering resistant film pressure transmitter and manufacturing method thereof Download PDFInfo
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- CN112414615B CN112414615B CN202011246726.5A CN202011246726A CN112414615B CN 112414615 B CN112414615 B CN 112414615B CN 202011246726 A CN202011246726 A CN 202011246726A CN 112414615 B CN112414615 B CN 112414615B
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- joint
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- welding
- sintering base
- insulating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
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Abstract
The invention discloses an ultrahigh voltage sputtering resistant film pressure transmitter and a manufacturing method thereof, which solve the problems that the insulation withstand voltage of the pressure transmitter is generally not high and the stability of a product is poor due to the stress easily generated by the welding of a pressure core in the prior art, the ultrahigh voltage sputtering resistant film pressure transmitter comprises a welding joint, a sintering base, a welding base, a pressure core and a circuit board, wherein an insulation base is arranged between the welding base and the sintering base, the insulation base comprises a ceramic ring and sintered glass, the welding base is insulated and sealed by utilizing the ceramic ring and the sintered glass, so that the integral voltage resistance of the transmitter is improved, the measurement precision of the pressure core is not influenced, an O-shaped rubber ring is arranged between the sintering base and the joint, the O-shaped rubber ring can provide the shock absorption performance for the sintering base and eliminate the stress influence on the pressure core during installation, the measurement accuracy of the pressure core body is ensured.
Description
Technical Field
The invention relates to the technical field of pressure transmitters, in particular to an ultrahigh voltage sputtering resistant film pressure transmitter and a manufacturing method thereof.
Background
The insulation withstand voltage of the existing sputtering film core body pressure transmitter is generally not high and is about 300 VAC. The principle of sputtering the film pressure core body is to coat a film on the surface of the stainless steel core body, and because of the structural process limitation, the improvement of the voltage resistance limit value is very difficult. If the voltage resistance performance of the product is greatly improved, the measurement precision of the product is inevitably influenced, so that the product loses the advantage of high measurement precision and influences the overall use stability and reliability of the product. The problem is also the main reason and the technical bottleneck that the sputtering film pressure transmitter cannot be widely popularized and applied.
The pressure core body of the existing product is directly welded with the head of the shell, so that the pressure core body is easy to receive great stress, the thread pretightening force easily influences the measurement precision of the pressure core body during installation, the stress cannot be released during long-term application, the pressure signal drifts, and the stability and the degeneration of the product are poor.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object of the present invention is to provide an ultrahigh voltage sputtering-resistant thin film pressure transmitter and a manufacturing method thereof, which can improve the voltage resistance of the sputtering thin film core pressure transmitter, ensure the measurement accuracy of the pressure core, and reduce the stress applied to the pressure core.
In order to achieve the above object, the present invention provides an ultrahigh voltage sputtering resistant thin film pressure transmitter, comprising:
a joint;
the sintering base is arranged in the joint, and a buffer piece is arranged between the bottom surface of the sintering base and the joint;
the outer side of the lower end of the welding seat is provided with an insulating seat, and the welding seat is installed in the sintering base through the insulating seat;
the pressure core body is arranged at the upper end of the welding seat;
the circuit board is electrically connected with the pressure core body.
According to the ultrahigh voltage sputtering resistant film pressure transmitter, an inner cavity is arranged in the connector, a flow guide hole is formed in the lower portion of the connector and communicated with the inner cavity, a guide pipe is arranged at the lower end of the sintering base and arranged in the flow guide hole, and a through hole communicated with the guide pipe is formed in the sintering base and the guide pipe.
According to the ultrahigh voltage sputtering resistant film pressure transmitter, the buffer piece is arranged to be an O-shaped rubber ring, the bottom surface of the inner cavity is provided with a positioning groove, the O-shaped rubber ring is installed in the positioning groove, and the bottom surface of the sintering base is connected with the O-shaped rubber ring.
According to the ultrahigh voltage sputtering resistant film pressure transmitter, the insulating base comprises an insulating cushion layer and an insulating side layer, the sintering base is provided with a containing cavity, the insulating cushion layer is arranged between the bottom of the welding base and the bottom of the containing cavity, and the insulating side layer is arranged between the side edge of the welding base and the side edge of the containing cavity.
According to the ultrahigh voltage sputtering resistant film pressure transmitter, the insulating cushion layer is a ceramic ring, the insulating side layer is sintered glass, annular grooves are formed in the sintering base and the welding seat and distributed in a staggered mode, and the sintered glass is embedded into the annular grooves.
According to the ultrahigh voltage sputtering resistant film pressure transmitter, the ultrahigh voltage sputtering resistant film pressure transmitter further comprises an external connection part and a bonding wire, wherein one end of the bonding wire is connected with the pressure core body, the other end of the bonding wire is connected with the circuit board, and the external connection part is used for electrically connecting the circuit board with an external component.
According to the ultrahigh voltage sputtering resistant film pressure transmitter, the circuit board is buckled and pressed in the connector.
A manufacturing method of a pressure transmitter of a sputtering film resistant to ultrahigh voltage comprises the following steps:
s1: selecting a ceramic ring and glass, and installing the ceramic ring and the glass into a sintering base;
s2: mounting the lower end of the welding seat between the ceramic ring and the glass, and processing the glass at high temperature to form sintered glass;
s3: welding the pressure core body to the upper end of the welding seat;
s4: mounting the sintering base into the joint and welding and fixing the sintering base and the joint;
s5: buckling and pressing the circuit board into the joint, selecting a bonding wire, and connecting one end of the bonding wire to the pressure core body and the other end of the bonding wire to the circuit board;
s6: the external connection part is formed on the joint.
According to the manufacturing method of the ultrahigh voltage sputtering resistant film pressure transmitter, the joint is internally provided with the positioning groove, the positioning groove is internally provided with the O-shaped rubber ring, and when the sintering base is installed in the joint, the sintering base is abutted to the O-shaped rubber ring.
According to the manufacturing method of the ultrahigh voltage sputtering resistant film pressure transmitter, before the step S1, the joint, the sintering base and the welding seat are respectively processed and formed.
The invention has the following beneficial effects:
the insulating seat is arranged between the welding seat and the sintering base, so that the welding seat can be assisted to be fixed, an insulating connector bearing ultrahigh power can be formed, and high voltage impact on the pressure core body is reduced, so that the voltage resistance of the whole sputtering film pressure transmitter is improved, and the measurement precision cannot be influenced;
the sintering base and the welding base are both provided with the annular grooves, so that after the glass is sintered, the bonding strength and the sealing property of the sintered glass are improved;
the annular grooves are arranged in a staggered manner, so that the sintered glass can be prevented from being broken due to stress concentration, and the high reliability of the sintered glass under the vibration condition is improved;
an O-shaped rubber ring is arranged between the sintering base and the joint, has a damping effect of absorbing vibration, and can eliminate stress of the pressure core body, so that the shock absorption and the stress elimination can be realized;
the whole structure is simple and compact.
Drawings
Fig. 1 is a sectional view of the overall structure of the present invention.
Fig. 2 is a top view of fig. 1.
Fig. 3 is a flow chart of a manufacturing method of the present invention.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
As shown in fig. 1-2, an ultra-high voltage sputtering resistant thin film pressure transmitter includes:
The sintering base 200 is installed in the joint 100, and a buffer is arranged between the bottom surface of the sintering base 200 and the joint 100, so that under the condition of violent movement, a small relative displacement can be generated between the sintering base 200 and the joint 100, the direct collision between the sintering base 200 and the joint 100 is avoided, the installation stress is prevented from being transmitted to the pressure core body 500, and meanwhile, the tensile stress caused by welding of the sintering base 200 is eliminated.
The outer side of the lower end of the welding seat 300 is provided with the insulating seat 400, and the welding seat 300 is installed in the sintering base 200 through the insulating seat 400, namely, the welding seat 300 and the sintering base 200 can be thoroughly insulated by using the insulating seat 400, the integral voltage resistance of the product can be increased without coating a film on the pressure core body 500, and the measurement precision of the original pressure core body 500 can be kept unchanged.
The circuit board 600, circuit board 600 and pressure core 500 electricity are connected, and pressure core 500 passes on the signal of telecommunication transmits circuit board 600, and circuit board 600 bears the weight of the signal of telecommunication, can pass through again transmit the signal of telecommunication to external component. The circuit board 600 is fastened and fixed inside the connector 100 through a multi-point flanging opening, so that the circuit board 600 is stably fixed.
The connector 100 is provided with an inner cavity 110, the lower portion of the connector 100 is provided with a diversion hole 120 communicated with the inner cavity 110, the lower end of the sintering base 200 is provided with a conduit 210, the conduit 210 is arranged in the diversion hole 120, the sintering base 200 and the conduit 210 are provided with communicated through holes 220, and the pressure core 500 is also arranged in the inner cavity 110, so that a substance to be tested can be transferred by matching the conduit 210 and the inner cavity 110.
The buffer is set to be an O-shaped rubber ring 230, the positioning groove 240 is arranged on the bottom surface of the inner cavity 110, the O-shaped rubber ring 230 is installed in the positioning groove 240, the bottom surface of the sintering base 200 is connected with the O-shaped rubber ring 230, when the sintering base is installed, the sintering base 200 is abutted against the O-shaped rubber ring 230, the O-shaped rubber ring 230 is not directly pressed to the bottom, and the compression allowance of the O-shaped rubber ring 230 is reserved for meeting the requirements of welding and vibration of the sintering base 200.
Insulating seat 400 includes insulating bed course and insulating side layer, be equipped with on the sintering base 200 and hold chamber 250, insulating bed course setting is between the bottom of welded seat 300 and the bottom that holds chamber 250, insulating side layer setting is between the side of welded seat 300 and the side that holds chamber 250, wherein because insulating bed course needs the trompil, can also play insulating effect, this insulating bed course sets up to ceramic ring 410, this insulating side layer is owing to do not need the trompil, chooseing for use sintered glass 420 or ceramic ring 410 all can.
Under the condition that the insulating side layer is made of the sintered glass 420, the annular grooves 260 are formed in the sintered base 200 and the welding seat 300, the annular grooves 260 are distributed in a staggered mode, the sintered glass 420 is embedded into the annular grooves 260, the sintered glass 420 is formed by installing the glass on the side edge of the welding seat 300, melting the glass at high temperature and embedding the glass into the annular grooves 260, and therefore strength of the sintered glass is improved.
The pressure chip comprises a pressure core body 500, and is characterized by further comprising an external part 700 and a bonding wire 800, one end of the bonding wire 800 is connected with the pressure core body 500, the other end of the bonding wire is connected with a circuit board 600, the external part 700 is used for electrically connecting the circuit board 600 with an external component, the external part 700 is arranged on a connector 100, the circuit board 600 can be electrically connected with the outside, the external part can be directly outgoing, and can also be connected with other monitoring systems through a connector, the complete transportation process that pressure physical quantity is converted into standard electric signals is achieved, circuit connection of sputtering film core signals to a processing circuit can be achieved through the bonding wire 800, and transmission and amplification conditioning of the electric signals are achieved.
As shown in fig. 3, a method for manufacturing a pressure transmitter of a sputtering film with ultra-high voltage resistance comprises the following steps:
s1: selecting a ceramic ring and glass, and installing the ceramic ring and the glass into a sintering base;
s2: mounting the lower end of the welding seat between the ceramic ring and the glass, and processing the glass at high temperature to form sintered glass;
s3: welding the pressure core body to the upper end of the welding seat;
s4: mounting the sintering base into the joint and welding and fixing the sintering base and the joint;
s5: buckling the circuit board into the joint, selecting a bonding wire, connecting one end of the bonding wire to the pressure core body, and connecting the other end of the bonding wire to the circuit board;
s6: the external connection part is formed on the joint.
Before step S1, separately processing a joint, a sintered base and a welded seat, wherein the sintered base is made of stainless steel, the welded seat is made of glass-sealed alloy, an inner cavity is formed in the joint, and a fixed O-shaped rubber ring is arranged at the bottom of the inner cavity and has the functions of adjusting deformation, eliminating stress and ensuring measurement accuracy. In step S1, a guide pipe is disposed on the sintering base, a guide hole is disposed on the joint, the guide pipe is inserted into the guide hole, the outer end surface of the guide pipe is sealed and fixed by a laser welding process, and during welding, the O-shaped rubber ring is controlled to have a certain compression amount by a uniquely designed tool fixture.
In step S2, the frit glass, the frit base and the solder seat form a bonding layer to perform a sealing and insulating function, and at this time, the frit base and the solder seat are both provided with annular grooves for enhancing the bonding strength with the frit glass.
According to the ultrahigh voltage sputtering resistant film pressure transmitter and the manufacturing method thereof, the insulating seat is arranged between the welding seat and the sintering base and comprises the ceramic ring and the sintered glass, the ceramic ring and the sintered glass are used for insulating and sealing the welding seat, so that the integral voltage resistance of the transmitter is improved, the measurement precision of the pressure core body is not influenced, the O-shaped rubber ring is arranged between the sintering base and the joint, the O-shaped rubber ring can provide the damping performance for the sintering base, the stress influence on the pressure core body during installation can be eliminated, and the measurement precision of the pressure core body is ensured.
The technical solutions of the present invention are explained in detail above with reference to the accompanying drawings, and the described embodiments are used to help understanding the idea of the present invention. The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (7)
1. The utility model provides a resistant ultra-high voltage sputtering film pressure transmitter which characterized in that includes:
a joint;
the sintering base is arranged in the joint, and a buffer piece is arranged between the bottom surface of the sintering base and the joint;
the outer side of the lower end of the welding seat is provided with an insulating seat, and the welding seat is installed in the sintering base through the insulating seat;
the pressure core body is arranged at the upper end of the welding seat;
the circuit board is electrically connected with the pressure core body;
an inner cavity is formed in the joint, a flow guide hole is formed in the lower portion of the joint and communicated with the inner cavity, a guide pipe is arranged at the lower end of the sintering base and arranged in the flow guide hole, and a communicated through hole is formed in the sintering base and the guide pipe;
the insulating seat comprises an insulating cushion layer and an insulating side layer, a containing cavity is formed in the sintering base, the insulating cushion layer is arranged between the bottom of the welding seat and the bottom of the containing cavity, and the insulating side layer is arranged between the side edge of the welding seat and the side edge of the containing cavity;
the insulating cushion layer is set to be a ceramic ring, the insulating side layer is set to be sintered glass, the sintered base and the welding seat are both provided with annular grooves, the annular grooves are distributed in a staggered mode, and the sintered glass is embedded into the annular grooves.
2. The ultra-high voltage sputtering resistant thin film pressure transmitter of claim 1, wherein the buffer is an O-shaped rubber ring, a positioning groove is arranged on the bottom surface of the inner cavity, the O-shaped rubber ring is installed in the positioning groove, and the bottom surface of the sintering base is connected with the O-shaped rubber ring.
3. The ultra-high voltage sputtering resistant thin film pressure transmitter of claim 1, further comprising an external connection portion and a bonding wire, wherein one end of the bonding wire is connected with the pressure core body, the other end of the bonding wire is connected with the circuit board, and the external connection portion is used for electrically connecting the circuit board with an external component.
4. The ultrahigh voltage sputtering resistant thin film pressure transmitter of claim 1 wherein said wiring board is crimped within said fitting.
5. The manufacturing method of the ultrahigh voltage sputtering resistant film pressure transmitter is characterized by comprising the following steps:
s1: selecting a ceramic ring and glass, and installing the ceramic ring and the glass into a sintering base;
s2: mounting the lower end of the welding seat between the ceramic ring and the glass, and processing the glass at high temperature to form sintered glass;
s3: welding the pressure core body to the upper end of the welding seat;
s4: installing a sintering base into the joint, and welding and fixing the sintering base with the joint;
s5: buckling and pressing the circuit board into the joint, selecting a bonding wire, and connecting one end of the bonding wire to the pressure core body and the other end of the bonding wire to the circuit board;
s6: the external connection part is formed on the joint.
6. The method as claimed in claim 5, wherein a positioning groove is formed in the joint, an O-shaped rubber ring is arranged in the positioning groove, and the sintering base abuts against the O-shaped rubber ring when the sintering base is mounted in the joint.
7. The method of claim 5, wherein the joint, the sintered base and the soldering base are formed before step S1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011246726.5A CN112414615B (en) | 2020-11-10 | 2020-11-10 | Ultrahigh voltage sputtering resistant film pressure transmitter and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011246726.5A CN112414615B (en) | 2020-11-10 | 2020-11-10 | Ultrahigh voltage sputtering resistant film pressure transmitter and manufacturing method thereof |
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| CN112414615A CN112414615A (en) | 2021-02-26 |
| CN112414615B true CN112414615B (en) | 2022-06-24 |
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| CN118424539B (en) * | 2024-07-02 | 2024-10-18 | 宁波中车时代传感技术有限公司 | Pressure sensor and manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1311227C (en) * | 2003-11-07 | 2007-04-18 | 株式会社不二工机 | Pressure sensor |
| CN2718547Y (en) * | 2004-07-06 | 2005-08-17 | 浙江三花制冷集团有限公司 | Matching structure for inductive pedestal and interface base |
| CN201688939U (en) * | 2010-03-31 | 2010-12-29 | 上海自动化仪表股份有限公司 | Hydraulic isolating device for vacuuming and filling medium on site |
| CN201993196U (en) * | 2011-02-16 | 2011-09-28 | 蚌埠市立群电子有限公司 | Integral glass sealed base for pressure sensor |
| JP5728437B2 (en) * | 2012-07-17 | 2015-06-03 | 長野計器株式会社 | Physical quantity measuring device and method of manufacturing physical quantity measuring device |
| CN103868639A (en) * | 2012-12-12 | 2014-06-18 | 浙江盾安人工环境股份有限公司 | Pressure transmitter |
| CN204330204U (en) * | 2014-12-03 | 2015-05-13 | 武汉航空仪表有限责任公司 | A kind of hermetically-sealed construction for hydraulic air sensor |
| CN208833416U (en) * | 2018-10-09 | 2019-05-07 | 陕西电器研究所 | A kind of high temperature modification film absolute pressure sensor |
| CN111141430A (en) * | 2019-12-23 | 2020-05-12 | 陕西电器研究所 | Film core body sealing assembly in sputtering film pressure sensor and preparation thereof |
| CN111707408B (en) * | 2020-07-08 | 2021-10-29 | 宁波中车时代传感技术有限公司 | Sputtering film pressure transmitter |
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