CN112385014A - 使用角度化离子来选择性地沉积层的方法、系统及装置 - Google Patents
使用角度化离子来选择性地沉积层的方法、系统及装置 Download PDFInfo
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Abstract
本发明提供一种方法。所述方法可包括提供衬底,衬底包括衬底表面,衬底表面具有三维形状。所述方法还可包括将沉积物种从沉积源引导到衬底表面,其中层沉积在衬底表面的沉积区上。所述方法可包括在进行引导期间或在进行引导之后实行衬底扫描,以将衬底从第一位置输送到第二位置。所述方法还可包括:在存在层的情况下将角度化离子引导到衬底表面,其中从沉积区的第一部分溅射蚀刻层,且其中所述层保留在沉积区的第二部分中。
Description
技术领域
本发明实施例涉及器件处理,且更确切来说涉及在衬底上选择性地沉积给定材料。
背景技术
现今,半导体及其他器件被缩小到越来越小的大小,其中这些器件可由诸多不同的材料形成,具有复杂的结构,通常布置在衬底上的多个不同的层中。解决材料及器件结构的不断增大的复杂性的一个方法是在器件结构的所选部分上选择性地形成给定材料,所述方法可尤其有助于解决处于微米级或纳米级的器件的图案化问题。选择性地形成材料的现有方法可涉及到多次图案化操作,这些操作可导致复杂性及成本过大。
鉴于这些及其他的考量而提供本发明。
发明内容
在一个实施例中,提供一种方法。所述方法可包括提供衬底,所述衬底包括衬底表面,所述衬底表面具有三维形状。所述方法还可包括将沉积物种从沉积源引导到所述衬底表面,其中层沉积在所述衬底表面的沉积区上。所述方法可包括在进行所述引导期间或在进行所述引导之后实行衬底扫描,以将所述衬底从第一位置输送到第二位置。所述方法还可包括在存在所述层的情况下将角度化离子引导到所述衬底表面,其中从所述沉积区的第一部分溅射蚀刻所述层,且其中所述层保留在所述沉积区的第二部分中。
在另一实施例中,一种系统可包括容纳衬底的工艺腔室,所述衬底包括衬底表面,所述衬底表面包括具有三维形状的至少一个结构。所述系统可包括:沉积源,设置成邻近所述工艺腔室且被布置成产生沉积物种以在所述衬底上形成层;以及角度化离子源,相对于衬底平面的垂线以一定入射角将角度化离子引导到所述工艺腔室。所述系统还可包括:衬底载台,设置在所述工艺腔室中,以使所述衬底从第一位置到第二位置接受扫描;以及控制器,耦合到所述角度化离子源,所述控制器被布置成发送至少一个控制信号以基于与所述至少一个结构相关的结构信息来调整所述入射角。
在又一实施例中,一种装置可包括沉积源,所述沉积源设置成邻近工艺腔室且被布置成产生沉积物种以在设置在所述工艺腔室中的衬底上形成层。所述装置还可包括角度化离子源,所述角度化离子源相对于衬底平面的垂线以一定入射角将角度化离子引导到所述工艺腔室。所述装置还可包括耦合到所述角度化离子源的控制器,所述控制器包括处理器及耦合到所述处理器的存储器单元,所述存储器单元包含选择性沉积控制例程。所述选择性沉积控制例程可在所述处理器上运作以控制所述角度化离子源。所述选择性沉积控制例程可包括溅射控制处理器,所述溅射控制处理器用以接收将在离子曝光期间被处理的衬底的结构信息;及基于所述结构信息计算所述角度化离子的所述入射角。
附图说明
图1示出根据本发明实施例的选择性沉积系统。
图2示出根据本发明的其他实施例的另一选择性沉积系统。
图3A、图3B及图3C示出钨/硅系统的Kr离子束处置的溅射特点的二维图。
图4示出根据本发明实施例的处理装置的框图。
图5示出示例性工艺流程。
附图未必成比例。附图仅仅是表示形式,并不旨在描绘本发明的具体参数。附图旨在示出本发明的示例性实施例,且因此不应被视为限制范围。在附图中,相似的编号表示相似的元件。
此外,为清晰地说明,在一些图中,某些元件可被省略掉,或未按比例加以说明。为清晰地说明,剖视图可呈“切片(slice)”形式,或可以是“近视”剖视图,省略了在“真实”剖视图中本可看到的某些背景线条。此外,为清晰起见,某些附图中可省略一些参考编号。
具体实施方式
现在,将在后文中参考附图更充分地阐述本发明实施例,附图中示出一些实施例。本发明的主题可体现为诸多不同的形式,并不应被解释为仅限于本文中所述的实施例。提供这些实施例以使本发明详尽且完整,且将向所属领域的技术人员充分传达主题的范围。在附图中,相似的编号自始至终指代相似的元件。
根据一些实施例,提供在衬底上选择性地形成层的新颖方法,且确切来说,提供在角度化离子的辅助下选择性地形成层来构造器件结构的新颖方法。在各种实施例中,使用一些操作的组合,包括使用用于沉积层的沉积源及用于选择性地移除层的一些部分的角度化离子源来实现选择性地形成层的。通过耦合到第一离子源及第二离子源的腔室扫描工件来进行准选择性沉积工艺,如以下实施例中所详述。
现在参看图1,示出根据本发明实施例的选择性沉积系统,所述选择性沉积系统被标示为沉积系统100。沉积系统100包括工艺腔室101,其中工艺腔室101可容纳衬底120。衬底120可具有衬底表面,所述衬底表面具有三维形状,如所示。具有三维形状的表面的实例包括具有以下特征的表面:从衬底平面突出的特征,例如台面、线路、柱、半球体;延伸到衬底中的空腔,例如通孔、沟槽等。如此,表面的给定部分可与表面的另一部分在不同的方向上延伸。在图1的实例中,衬底表面包括结构122,在一些实施例中,所述结构可被布置为线路、柱或台面。值得注意的是,结构122可未按比例绘制,尤其是相对于工艺腔室101来说。在一些实例中,结构122沿着X方向、Y方向或Z方向的尺寸可大约为数微米、数百纳米、数十纳米、数纳米等。如此,所属领域的技术人员将容易了解到,尺寸大约为数毫米、数厘米或数十厘米的衬底120可包括极大数目个结构122。
沉积系统100可包括沉积源102,其中沉积源102被设置成邻近工艺腔室101。在其他实施例中,沉积源102可设置在工艺腔室101内。沉积源102可被布置成产生沉积束112作为沉积物种。在各种实施例中,沉积源102可耦合到源108,其中源108表示液相源、单个气体源、多个气体源、气体分流管等。源108耦合到沉积源102以将至少一种物种提供到沉积源102。沉积源102在一些实施例中可以是化学气相沉积源,或者可以是离子源,例如此项技术中已知的任何适合的离子源。沉积源102可以是其中产生等离子体的等离子体源。实施例并不仅限于此情境。
沉积束112可包括离子、中性粒子、已激发物种,其中可沿着给定方向将沉积束112的物种引导到衬底。在一些实施例中,沉积束112可以是准直束及角度化沉积束,其中沿着相对于衬底平面的垂线119界定非零入射角(示出为θ1)的轨迹引导沉积物种。举例来说,衬底的平面可以是X-Y平面,且所述衬底表面的某些区(例如,位于结构122之间的顶部123或沟槽区124)可以但不必也与所述衬底平面对齐或界定所述衬底平面。
如所示,在图1中,沉积束112在衬底120上产生层121。根据将产生的层121的性质,沉积束112可包括用以产生金属层、半导体层、氮化物层、氧化物层、碳层等的已知气相物种,例如等离子体物种、自由基、离子。虽然在一些实施例中,可共形地沉积层121,但在其他实施例中,沉积区124可不覆盖衬底120的整个表面。根据衬底120的表面的三维表面的确切性质以及沉积束112的入射角,沉积区124的位置、形状及跨度可有所变化。在图1的实例中,沉积区124包括结构122的右侧壁127及结构122的顶部123,而不包括左侧壁129。
沉积系统100还可包括角度化离子源104,其中角度化离子源104被设置成将角度化离子114引导到衬底120的衬底表面。角度化离子源104可设置在工艺腔室101内或工艺腔室101外。角度化离子源104可耦合到气体源110,其中气体源110可表示至少一个气体源,例如惰性气体源、氧气源、氮气源或其他气体源。当衬底120被设置成拦截角度化离子114时,角度化离子源104可被配置成产生适合物种、离子能量及离子通量的离子以溅射蚀刻衬底120的材料。在各种实施例中,角度化离子源104可表示任何适合的离子源(包括等离子体束源),其中角度化离子114可形成具有适合形状的离子束。举例来说,在一些实施例中,角度化离子114可被配置成具有沿着X轴延伸的长轴的带状束。角度化离子源104可被布置成按照由相对于衬底平面(在此实例中是X-Y平面)的垂线119的非零入射角所界定(示出为θ2)的轨迹产生角度化离子114。
沉积系统100可包括衬底载台106,衬底载台106被配置成使衬底120接受扫描。在一些实施例中,衬底载台106可被配置成使衬底沿着至少一个方向(例如,沿着所示的笛卡儿坐标系的Y轴)接受扫描。衬底载台106可使衬底在目标范围内(例如,在邻近沉积源102的第一位置P1与邻近角度化离子源104的第二位置P2之间)接受扫描。如此,可沿着Y轴对衬底120进行扫描,以使衬底120的不同部分依序暴露于角度化离子114。
如图1中所示,可对衬底120进行扫描,以使得在沉积层121之后或在沉积层121的同时将结构122暴露于角度化离子114。如此,当层121可在衬底上沉积在沉积区124之上时,角度化离子114可溅射蚀刻层121,以使层121从沉积区124的第一部分124A被移除且保留在沉积区124的第二部分124B中。使用沉积源102及角度化离子源104来处理衬底120的结果是层121选择性地沉积在衬底120的目标区中(在此种情形中,沉积在第二部分124B中)。
根据各种实施例,可根据结构122的形状及大小以及在衬底120上选择性地形成层的目标区(例如,第二部分124B)的位置及大小来选择角度化离子114的界定入射角的轨迹。还可将层121的材料的溅射率特点考虑在内来选择角度化离子114的轨迹。举例来说,可根据相对于将溅射率最大化的给定表面的入射角来选择角度化离子114的轨迹。角度化离子114的轨迹还可被选择成其中在设计的入射角下,角度化离子产生第一材料层121的第一溅射率,所述第一溅射率高于衬底120的第二材料的第二溅射率。换句话说,可将角度化离子114引导于一些表面处,在所述表面处以一定入射角下蚀刻层121,角度化离子114相对于衬底120在所述入射角下选择性地溅射蚀刻层121。这样一来,角度化离子114即使被提供为惰性气体(非反应性的)离子,仍可相对于衬底120选择性地移除层121。
在另一些实施例中,还可将层121的初始覆盖跨度(亦即,沉积区124的覆盖跨度)考虑在内来选择角度化离子的轨迹。反之,可对沉积束112的轨迹(亦即θ2的值)进行调整,以将层121得以保留下来的第二部分124B的位置及跨度以及材料(例如,层121的材料及衬底120的材料)的溅射率特点考虑在内。换句话说,可对沉积束112的入射角进行调整,以使得层121的材料将被移除的第一部分124A的位置可使得可以恰当的入射角引导角度化离子114以选择性地溅射蚀刻层121,同时将对衬底120的蚀刻最小化,如下文进一步阐释。
因此,虽然可需要一个以上的不同操作来在第二部分124B中形成层121,但在第一部分124A中对层121的沉积、对衬底120的扫描及对层121的溅射移除协同地界定选择性沉积工艺。
在额外实施例中,角度化沉积源可将沉积物种引导成准直束,其中沿着相对于衬底平面的垂线119界定零入射角(示出为θ1)的轨迹引导沉积物种,亦即沉积物种具有沿着垂线119的轨迹。在这些额外实施例中,沉积区可首先覆盖顶部123及沟槽125,而不覆盖左侧壁129或右侧壁127。然后,角度化离子114可针对性地选择性移除沉积区的一部分(例如,顶部123的材料),同时留下沟槽125中的材料等。
现在参看图2,示出根据本发明的另一些实施例的选择性沉积系统,所述选择性沉积系统被标示为沉积系统140。沉积系统140可与沉积系统100包括类似的特征,这些类似的特征由相似的参考编号来指示。值得注意的是,沉积系统140与沉积系统100的差异在于,沉积系统140包括沉积源150,其中与图1中所示的层121的方向性沉积相比,沉积源150更各向同性地实现对层154的沉积。沉积源150可以是等离子体沉积源,其中等离子体152是在工艺腔室101中产生。沉积源150的配置可与已知的等离子体沉积装置类似,其中衬底120在设置于位置P1处时浸没在等离子体152中。如此,使来自等离子体152的物种凝结可往往会形成共形涂层,所述共形涂层被示出为层154,其中层154在沉积区155中涂布结构122的各个表面。最初,沉积区155可覆盖结构122的整个表面,包括顶部123、沟槽125、左侧壁129及右侧壁127。当对衬底120进行扫描以使角度化离子114冲击衬底120时,可通过溅射蚀刻移除层154的一部分。因此,层154可在沉积区155的第一区155A中被移除,而在第二区155B中保留下来。在此实例中,第一区可与结构122的顶部123对应,而第二区155B与结构122的其他表面对应。
如所述,角度化离子114可被布置成相对于衬底平面的垂线界定非零入射角,这样一来以相对于衬底120增强对层121或层154的溅射蚀刻选择性。根据各种实施例,沉积系统100及沉积系统140可包括控制器130。控制器130可被布置成根据将被沉积的层的材料、衬底120的材料、选择性地沉积层的目标区以及其他因素来调整各种组件的操作,包括调整θ2的值、意指θ1的值的值。在此情境中,层的“材料”或衬底的“材料”可至少部分地指代材料组成,例如层的元素,其中层及衬底通常是由不同的材料形成:钨对硅、硅对氧化硅等。
参看图3A、图3B及图3C,示出钨/硅系统的Kr离子束处置的溅射特点的二维图。二维图说明随着离子能量及相对于衬底平面的垂线的入射角而变化的溅射率。在每一图中,通过明暗变化来示出随着离子能量(Y轴)及相对于材料表面的平面的垂线的入射角(X轴)而变化的溅射速率或相对溅射速率。图表是基于以圆圈示出的实验数据点而进行的模拟。将钨(图3A)及硅(图3B)溅射速率示出为以埃为单位以1xE16/平方厘米的离子剂量蚀刻掉的层厚度。虽然蚀刻速率往往随着入射角增大及离子能量增大而增大,如箭头所示,但W/Si溅射比(图3C)展现出更复杂的特性。在法向入射(0度)时或接近法向入射时,W/Si溅射比相对较高,处于2到4的范围中,而在较高的入射角下W/Si溅射比减小。在高入射角(>60度)及低离子能量(小于2千电子伏特)下,W/Si溅射比是最低的。随着离子能量而变化的特点更复杂:在低入射角(<20度)下,W/Si溅射比随离子能量增大到10千电子伏特而略微减小,而在较高入射角(>30度)下,W/Si溅射比随离子能量而增大。图3C还示出中线300,中线300表示W/Si的蚀刻比为1/1,亦即在沿着中线300的任何点所表示的离子能量/离子角度下钨溅射与硅溅射一样快的情况。因此,图3A到图3C的信息可用于对离子能量及入射角做出相应的调整,以便于根据图案化衬底上的表面上的材料以及实际的考量来在衬底上进行选择性沉积。这些考量包括可从给定离子源获得的离子能量范围以及给定系统配置中可用的实际入射角范围。
信息(例如,图3C的数据)可用于调整或设定角度化离子114的目标入射角,所述目标入射角由θ2表示,如上文所述。因此,在衬底120是硅且层121是钨的实例中,为从给定表面选择性地移除钨,将θ2的值设定成产生高W/Si溅射速率比可有帮助。在此实例中,为如在图1及图2的情景中从顶部123移除材料,在500电子伏特的离子能量下将θ2的值设定为处于0度与5度之间对应于大约4/1的W/Si溅射蚀刻比。
图3A-3C中所提供的对W/Si/Kr系统的的图解说明仅是示例性的。沉积层材料/衬底及离子物种的其他组合通常将形成不同的溅射蚀刻选择性特点。在其他实施例中,可根据由经验确定的衬底材料/沉积层材料/溅射物种系统的特点来调整角度化离子114的入射角以实现选择性沉积。
在另一些实施例中,针对角度化离子114而定的入射角以及离子能量可将待处理结构的形状考虑在内。举例来说,再次参考图2,在一些实施例中,可需要从左侧壁129的一些部分以及顶部123的一些部分溅射移除层154来形成最终的目标结构。如果左侧壁129与顶部123彼此相互正交(90度),则θ2的所选角度可因此是45度,以确保左侧壁129与顶部123相对于相应的表面而以相同的相对入射角接收离子。继续以图3C的数据为例,在使用Kr+离子来蚀刻设置在硅衬底上的钨层154的情况下,使用较高的W/Si溅射蚀刻比来确保在从顶部123及左侧壁129移除钨期间,硅不会过度地溅射在结构122中。由于在低于3千伏时,对硅的溅射速率会高于钨,因此图3C的数据决定了将氪离子的离子能量设定成相对高的值。因此,在对钨的蚀刻比硅快的情况下,可将离子能量设定为例如10千伏。
根据一些实施例,可使用系统(例如,沉积系统100)的控制器130来调整且控制工艺参数以促成选择性沉积。现在参看图4,示出沉积系统100的框图,沉积系统100包括控制器130、沉积源102及角度化离子源104。控制器130可耦合到这些组件,例如以将控制信号发送到所述组件及从所述组件接收信号。控制器130可包括处理器252,例如已知类型的微处理器、专用半导体处理器芯片、通用半导体处理器芯片或类似的器件。控制器130还可包括耦合到处理器252的存储器或存储器单元254,其中存储器单元254含有选择性沉积控制例程256。选择性沉积控制例程256可在处理器252上运作以监测并调整包括沉积源102及角度化离子源104在内的组件。
存储器单元254可包括制品。在一个实施例中,存储器单元254可包括任何非暂时性计算机可读媒体或机器可读媒体,例如光学存储器件、磁性存储器件或半导体存储器件。所述存储媒体可存储各种类型的计算机可执行指令以实施本文中所述的逻辑流程中的一者或多者。计算机可读存储媒体或机器可读存储媒体的实例可包括能够存储电子数据的任何有形媒体,包括易失性存储器或非易失性存储器、可移除存储器或不可移除存储器、可擦除存储器或不可擦除存储器、可写入存储器或不可写入存储器等。计算机可执行指令的实例可包括任何适合类型的代码,例如源代码、编译代码、解译代码、可执行代码、静态代码、动态代码、面向对象的代码、视觉代码(visual code)等。实施例并不仅限于此种情境。
如图4中进一步所示,选择性沉积控制例程256可包括溅射控制处理器258以及沉积控制处理器260。根据一些实施例,溅射控制处理器258可接收将在离子曝光期间被处理的衬底的结构信息。所述结构信息的实例包括三维(three-dimensional,3D)结构的特征的高度、邻近特征之间的节距、3D结构的将被溅射蚀刻的目标区(例如,参见第一部分124A)、将被沉积的层的材料、衬底材料等。溅射控制处理器258可被布置成基于结构信息来计算角度化离子(例如,角度化离子源10所产生的离子束)的入射角。溅射控制处理器258可发送控制信号以调整对沉积系统100的设定,其中调整设定(参数)具有改变角度化离子114的入射角、改变角度化离子114的离子能量或改变入射角及能量两者的效果。因此,当溅射控制处理器258基于结构信息而确定应对入射角或离子能量做出改变时,可发送控制信号以调整角度化离子源104以改变角度化离子114的入射角。
沉积控制处理器260可被布置成基于所接收到的沉积工艺信息发送沉积控制信号以调整上文所述的沉积束112的入射角。举例来说,沉积信息可包括以下信息中的一些或全部:上文所述的结构信息以及离子束信息,例如将用于角度化离子114的优选离子物种或角度化离子114的入射角的优选角度范围。
还如图4中所示,存储器单元254可包括数据库262,其中数据库可包含括结构信息或沉积信息以及其他数据。
图5示出根据本发明实施例的示例性工艺流程500。在方框502处,提供表面具有三维形状的衬底。在各种实施例中,所述表面可包括:从衬底平面突出的特征,例如台面、线路、柱、半球体;延伸到衬底中的空腔,例如通孔、沟槽等。
在方框504处,将沉积物种从沉积源引导到衬底表面,其中层形成在衬底表面的沉积区上。在一些实施例中,可将沉积区限制成小于整个衬底表面,而在其他实施例中,沉积区可覆盖全部衬底表面。在衬底表面包括三维结构的一些实施例中,沉积区可覆盖三维结构的第一部分,而层不形成在三维结构的第二部分上。举例来说,在各种实施例中,可以一定入射角将沉积物种引导成角度化束,所述入射角使三维结构的第二部分被遮蔽在角度化束之外因此沉积物种无法“看到”第二部分而形成被遮蔽区。在其他实施例中,整个衬底可暴露于例如等离子体沉积腔室中的沉积物种,其中沉积物种可各向同性地冲击在衬底表面上以覆盖全部的衬底,包括覆盖衬底表面上的全部三维结构。
在方框506处,实行衬底扫描以将衬底从第一位置输送到第二位置。在第一位置中,衬底可被设置成拦截来自沉积源的沉积物种,而在第二位置中,衬底被设置成拦截来自角度化离子源的角度化离子。在一些实施例中,在给定情形下仅衬底的第一区可暴露于沉积物种,其中在衬底从第一位置到第二位置接受扫描时,衬底的不同区连续暴露于沉积物种。
在方框508处,在存在层的情况下将角度化离子引导到衬底表面。如此,可从沉积区的第一部分移除层,而所述层保留在沉积区的第二部分中。在各种实施例中,可从产生溅射离子的离子源提供角度化离子以蚀刻沉积区的第一部分中的层。可将三维结构的形状及大小以及层的材料与衬底的材料考虑在内来布置入射角(相对于衬底平面的垂线)。在各种实施例中,可调整入射角以增大层材料/衬底材料的溅射比,以将对衬底的蚀刻减小或最小化,同时确保移除沉积区的第一部分中的层。
总而言之,本发明实施例具备能够在不使用掩模的情况下在三维结构上实行材料的选择性沉积的优点。本发明实施例还具备在避免需要多个处理工具的复杂方案的同时在三维表面中选择性地沉积材料的额外优点。
本发明的范围不受本文中所述的具体实施例限制。实际上,所属领域的技术人员依据前述说明及附图将明了除本文中所述的实施例之外的本发明的其他各种实施例及润饰。因此,这些其他实施例及润饰旨在涵盖于本发明的范围内。此外,本文中已出于特定目的、在特定环境中、在特定实施的情境中阐述了本发明。所属领域的技术人员将认识到,用途并不仅限于此,且本发明可有利地实施在若干种环境中来达成若干个目的。因此,应鉴于本文中所述的本发明的全部范畴及精神来对下文所述的权利要求加以解释。
Claims (15)
1.一种方法,包括:
提供衬底,所述衬底包括衬底表面,所述衬底表面具有三维形状;
将沉积物种从沉积源引导到所述衬底表面,其中层沉积在所述衬底表面的沉积区上;
在进行所述引导期间或在进行所述引导之后实行衬底扫描以将所述衬底从第一位置输送到第二位置;以及
在存在所述层的情况下将角度化离子引导到所述衬底表面,其中从所述沉积区的第一部分溅射蚀刻所述层,且其中所述层保留在所述沉积区的第二部分中。
2.根据权利要求1所述的方法,其中所述沉积源包括第一离子源,所述第一离子源相对于所述衬底的平面的垂线以第一非零入射角引导所述沉积物种,其中所述沉积区包括不到整个所述衬底表面。
3.根据权利要求2所述的方法,其中所述衬底表面包括被遮蔽区,其中所述层不形成在所述被遮蔽区上。
4.根据权利要求2所述的方法,其中相对于所述衬底的所述平面以第二非零入射角从第二离子源引导所述角度化离子。
5.根据权利要求1所述的方法,其中所述沉积源包括等离子体源,其中所述层各向同性地沉积在所述衬底表面上。
6.根据权利要求1所述的方法,其中所述衬底表面包含第一材料,其中所述层包含第二材料,所述方法还包括:
为所述角度化离子设定目标角度,所述目标角度包括相对于所述衬底的目标表面的垂线的非零入射角,所述目标表面设置在所述沉积区内,
其中在所述目标角度下,所述角度化离子产生关于所述第一材料的第一溅射率及关于所述第二材料的第二溅射率,大于所述第一溅射率。
7.根据权利要求6所述的方法,还包括:基于随着所述第一材料及所述第二材料的能量而变化的溅射率特点将所述角度化离子的离子能量调整到目标离子能量,其中比率增大。
8.根据权利要求1所述的方法,其中所述沉积源包括第一离子源,所述第一离子源相对于所述衬底的平面的垂线以零入射角线引导所述沉积物种,其中所述沉积区包括不到整个所述衬底表面。
9.一种系统,包括:
工艺腔室,用以容纳衬底,所述衬底包括衬底表面,所述衬底表面包括具有三维形状的至少一个结构;
沉积源,设置成邻近所述工艺腔室且被布置成产生沉积物种以在所述衬底上形成层;
角度化离子源,相对于衬底平面的垂线以一定入射角将角度化离子引导到所述工艺腔室;
衬底载台,设置在所述工艺腔室中以使所述衬底从第一位置到第二位置接受扫描;以及
控制器,耦合到所述角度化离子源,所述控制器被布置成发送至少一个控制信号以基于与所述至少一个结构相关的结构信息来调整所述入射角。
10.根据权利要求9所述的系统,其中所述沉积源被布置成产生角度化沉积束。
11.根据权利要求9所述的系统,其中所述沉积源包括第一离子源,所述第一离子源被布置成相对于所述衬底平面的所述垂线以第一非零入射角引导沉积物种。
12.根据权利要求9所述的系统,所述结构信息包括所述至少一个结构的高度、所述至少一个结构中的邻近结构之间的节距、所述衬底表面的将被溅射蚀刻的目标区、所述层的材料组成或所述衬底的材料组成。
13.一种装置,包括:
沉积源,设置成邻近工艺腔室且被布置成产生沉积物种以在设置在所述工艺腔室中的衬底上形成层;
角度化离子源,相对于衬底平面的垂线以一定入射角将角度化离子引导到所述工艺腔室;以及
控制器,耦合到所述角度化离子源,所述控制器包括:
处理器;及
存储器单元,耦合到所述处理器,包含选择性沉积控制例程,所述选择性沉积控制例程在所述处理器上运作以控制所述角度化离子源,所述选择性沉积控制例程包括溅射控制处理器,所述溅射控制处理器用以:
接收将在离子曝光期间被处理的衬底的结构信息;及
基于所述结构信息计算所述角度化离子的所述入射角。
14.根据权利要求13所述的装置,所述溅射控制处理器发送控制信号以调整所述角度化离子源,以改变所述角度化离子的所述入射角。
15.根据权利要求13所述的装置,所述结构信息包括:设置在所述衬底上的三维结构的高度、设置在所述衬底上的邻近三维结构之间的节距、所述衬底的将被溅射蚀刻的目标区、所述层的材料组成或所述衬底的材料组成。
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US20200027707A1 (en) | 2020-01-23 |
TW202006799A (zh) | 2020-02-01 |
TWI779214B (zh) | 2022-10-01 |
CN112385014B (zh) | 2023-07-04 |
WO2020018262A1 (en) | 2020-01-23 |
US10879055B2 (en) | 2020-12-29 |
JP7274565B2 (ja) | 2023-05-16 |
JP2021531404A (ja) | 2021-11-18 |
KR102440921B1 (ko) | 2022-09-06 |
KR20210021091A (ko) | 2021-02-24 |
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