CN112341185B - 一种超高品质因素的铝酸盐系微波介电材料及其制备方法 - Google Patents
一种超高品质因素的铝酸盐系微波介电材料及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种超高品质因素的铝酸盐系微波介电材料,属于微波电子陶瓷材料及其制造领域,该材料的化学组成为:MgAl2‑x (Zn0.5Ti0.5) x O4,其中,0<x≤0.5,本发明还公开了上述材料的制备方法,包括称量、球磨、烘料、煅烧、二次球磨、烘料、造粒、成型、排胶及烧结等步骤;本发明提供的微波介质材料,具有低的介电常数(6.95~9.89)和超高的Q×f值(最高达263900 GHz),在新一代移动通信及毫米波通信领域具有较高应用前景。
Description
技术领域
本发明涉及微波电子陶瓷材料及其制造领域,尤其涉及一种超高 品质因素的铝酸盐系微波介电材料及其制备方法。
背景技术
随着新一代移动通信的快速发展,对信号传输速度和器件小型化 提出了更高的要求。相比传统材料,低介电常数(εr<10)的微波介 质陶瓷由于具有使用频率高且传输速度快的优势,成为毫米波的重要 基础材料。
在低介电常数的微波陶瓷中,铝酸盐由于具有良好的综合性能而 被广泛研究。MgAl2O4微波陶瓷不仅具有低介电常数(εr≈7.9) (Takahashi S,Ogawa H,KanA.Electronic states and cation distributions of MgAl2O4 and Mg0.4Al2.4O4microwave dielectric ceramics. J Eur Ceram Soc.2018;38(2):593–598.),而且与集成电路中的Si具有 相同的立方晶体结构和相近的线膨胀系数(Mi S,Zhang R,Lu L,LiuM,Wang H,Jia C.Atomic-scale structure and formation of antiphase boundariesinα-Li0.5Fe2.5O4 thin films on MgAl2O4(001)substrates.Acta Mater.2017;127:178–184.Egorov S V,Sorokin AA,Ilyakov IE, Shishkin BV,Parshin VV,Balabanov SS,Belyaev AV.Low loss MgAl2O4 ceramics for terahertz windows.EPJ Web Conf.2018;187:01004.)。因此,由MgAl2O4微波陶瓷制作的微波介质基板及器 件不仅能满足毫米波通信系统对其性能的要求,而且能实现与现今广 泛使用的Si集成电路的良好相容性。
然而,现有MgAl2O4微波陶瓷的较低的品质因素(Q×f)成为它 在毫米波通信系统中广泛应用的限制条件之一。因此,如何在维持低 介电常数的同时,实现MgAl2O4微波陶瓷的高Q×f值是一个亟待解 决的问题。Takahashi等(Takahashi S,Kan A,OgawaH.Microwave dielectric properties and crystal structures of spinel-structuredMgAl2O4 ceramics synthesized by a molten-salt method.J Eur Ceram Soc.2017; 37(3):1001–1006.)通过熔盐法制备MgAl2O4微波陶瓷,虽然获得了 高Q×f值(201690GHz),但熔盐法制备过程较复杂,不适合大批量 生产。Kan等(Kan A,Okazaki H,Takahashi S,Ogawa H.Microwave dielectric properties and cation distribution of spinel-structured Mg0.4Al2.4-xGaxO4 ceramics with cation defect.Jpn J Appl Phys.2018;57(11):11UE03.)采用Ga3+替代Al3+非化学计量的Mg0.4Al2.4-xGaxO4微 波陶瓷,也获得了较高的Q×f值(191340GHz),但原料Ga3+价格昂 贵,不适合大规模生产。
发明内容
本发明的目的就在于提供一种原料廉价、低介电常数、超高Q×f 值的MgAl2O4盐系微波介电材料,以解决上述问题。
为了实现上述目的之一,本发明采用的技术方案是这样的:一种 超高品质因素的铝酸盐系微波介电材料,其化学组成为: MgAl2-x(Zn0.5Ti0.5)xO4,其中,0<x≤0.5。
作为优选的技术方案:x=0.5。当x取值为0.5时,所得的材料 在保证介电常数εr<10的同时,品质因素可以达到263 900GHz。
本发明的目的之二,在于提供一种上述的超高品质因素的铝酸盐 系微波介电材料的制备方法,采用的技术方案为,包括以下步骤:
(1)称量原料:以MgO、Al2O3、ZnO和TiO2为原料,根据对应 摩尔比进行称量,一次球磨,烘料,得烘干料;
(2)预烧:将步骤(1)中所得烘干料,按照2~5℃/min的升温 速率升至1100~1450℃,并保温3~6h,冷却至室温,获得煅烧后 的MgAl2-x(Zn0.5Ti0.5)xO4预烧料;
(3)二次球磨:将步骤(2)所得进行二次球磨;
(4)造粒:将步骤(3)所得球磨后的料浆烘干至恒重,进行造粒, 得到样品;
(5)制备生坯:将步骤(4)所得样品,按照2~5℃/min的升温 速率升至400~600℃并保温3~6h,冷却至室温,得到排胶后的生 坯样品;
(6)烧结:将步骤(5)所得生坯样品,按照2~5℃/min的升温 速率升至1100~1600℃并保温3~6h,再冷却至室温,得到超高品 质因素的铝酸盐微波介电材料。
作为优选的技术方案,步骤(3)中,采用氧化锆磨球和去离子水 进行二次球磨。
作为优选的技术方案,步骤(4)中,造粒时加入20wt%~30wt% 的PVA溶液。
作为优选的技术方案,步骤(4)中造粒时压力为20MPa,并压 制成直径12mm、厚度4-6mm的圆柱。
本发明基于MgAl2-x(Zn0.5Ti0.5)xO4化学计量比,主要成分为 MgAl2O4和MgTiO3的微波介质陶瓷,通过固相反应法获得低介超高 Q×f值的铝酸盐微波介质陶瓷;
通过本发明的固相反应法制备出材料根据x值的不同,在x≤0.04 时,样品主要含MgAl2O4相;当x>0.04时,样品含MgAl2O4和MgTiO3两相,其中主相为MgAl2O4、次相为MgTiO3;
需要说明的是,本领域技术人员知晓:XRD检测的物相,同一 种相结构的材料XRD图直观上差别很微小,在这里Zn进入晶格里, (Zn0.5Ti0.5)先占据Al位置,在(Zn0.5Ti0.5)高含量时,形成MgTiO3后, Zn填补Mg位置,但都没有单独形成一个新的物相,所以虽然原料中加入了Zn,但宏观上XRD峰数量和位置与MgAl2O4的并没有明显 差别。
与现有技术相比,本发明的优点在于:本发明通过贱金属复合离 子(Zn0.5Ti0.5)3+替代MgAl2O4中Al3+离子,在不增加成本基础上,获得 低的介电常数(6.95~9.89)和超高的Q×f值(最高达263 900GHz) 微波介质材料。超高的Q×f值主要源于部分(Zn0.5Ti0.5)3+进入MgAl2O4晶格后,改变其晶胞体积,从而使其填充率发生变化,最终使Q×f值 得到极大提升。由于微波介质材料具有超高的Q×f值的同时,还具有 低介电常数,因此,在新一代移动通信及毫米波通信领域具有较高应 用前景。
附图说明
图1为不同x值的样品XRD图谱(其中,x=0作为对照样品);
图2为1550℃烧结时,实施例1中x不同取值对应的εr值和Q×f 值(x=0作为对照样品);
图3为不同x值的样品的微波介电性能图。
具体实施方式
下面将结合附图对本发明作进一步说明。
实施例1:
一种上述的超高品质因素的铝酸盐系微波介电材料,其化学组成 为MgAl2-x(Zn0.5Ti0.5)xO4,其制备方法包括:
步骤1:按照摩尔比MgO:ZnO:TiO2:Al2O3=1:0.5x:0.5x:(2-x)称料配 置原料(x=0~0.5);将配好的原料置于球磨罐,以锆球为研磨球, 以去离子水为球磨介质,在250rpm的转速下球磨4h,球磨结束后 将料浆置于恒温干燥箱,烘干至恒重备用;
步骤2:将步骤1所得的烘干后结块的粉料在研钵中捣碎,放入 坩埚中压实,按2℃/min的升温速率升至100℃,再以5℃/min升 至1000℃,然后在以2℃/min升至1450℃进行预烧,保温4h后以 5℃/min降至500℃,再随炉冷却至室温得到MgAl2-x(Zn0.5Ti0.5)xO4预烧料,进一步将预烧料放入球磨罐中进行二次球磨,球磨工艺同一次 球磨,球磨完成后烘干至恒重备用;
步骤3:将步骤2所得粉料加入20wt%的PVA溶液作为粘结剂, 进行造粒并在20MPa下单轴干压成直径×厚度=12mm×6mm圆柱;
步骤4:将步骤3所得生坯样品放入高温烧结炉中,按2℃/min 的升温速率升至100℃,再继续升温至600℃并保温4h,然后以 5℃/min降至500℃后随炉冷却至室温,获得排胶后的生坯样品;
步骤5:将步骤4所得排胶后的生坯样品再次放入高温烧结炉中, 按2℃/min的升温速率升至100℃,再以5℃/min升至1000℃,然 后以2℃/min升至1550℃并保温4h进行烧结,保温结束后以5℃/min 降至500℃再随炉冷却至室温,获得低介超高Q×f值的铝酸盐微波介 电陶瓷样品;
当x=0(作为对照样品),0.04,0.12,0.20,0.30,0.40和0.50 时,不同x值的样品XRD图谱如图1所示,从图1中可以看出:在 x≤0.04时,样品主要含MgAl2O4相,当x>0.04时,样品含MgAl2O4和MgTiO3两相的特征峰,其中主相MgAl2O4和次相MgTiO3;
不同x值的样品的微波介电性能如图2所示(x=0作为对照样 品),从图2中可以看出,x=0~0.50时,εr=8.14~9.86,Q×f=42 600~263 900GHz,且当x=0.50时,εr=9.86、Q×f=263 900GHz。
实施例2:
一种上述的超高品质因素的铝酸盐系微波介电材料,其化学组成 为MgAl2-x(Zn0.5Ti0.5)xO4,其制备方法包括:
步骤1:按照摩尔比MgO:ZnO:TiO2:Al2O3=1:0.5x:0.5x:(2-x)称料配 置原料(x=0~0.5);将配好的原料置于球磨罐,以锆球为研磨球, 以去离子水为球磨介质,在250rpm的转速下球磨4h,球磨结束后 将料浆置于恒温干燥箱,烘干至恒重备用;
步骤2:将步骤1所得的烘干后结块的粉料在研钵中捣碎,放入 坩埚中压实,按2℃/min的升温速率升至100℃,再以5℃/min升 至1000℃,然后在以2℃/min升至1450℃进行预烧,保温4h后以 5℃/min降至500℃,再随炉冷却至室温得到MgAl2-x(Zn0.5Ti0.5)xO4预烧料,进一步将预烧料放入球磨罐中进行二次球磨,球磨工艺同一次 球磨,球磨完成后烘干至恒重备用;
步骤3:将步骤2所得粉料加入20wt%的PVA溶液作为粘结剂, 进行造粒并在20MPa下单轴干压成直径×厚度=12mm×6mm圆柱;
步骤4:将步骤3所得生坯样品放入高温烧结炉中,按2℃/min 的升温速率升至100℃,再继续升温至600℃并保温4h,然后以 5℃/min降至500℃后随炉冷却至室温,获得排胶后的生坯样品;
步骤5:将步骤4所得排胶后的生坯样品再次放入高温烧结炉中, 按2℃/min的升温速率升至100℃,再以5℃/min升至1000℃,然 后以2℃/min升至1450℃并保温4h进行烧结,保温结束后以5℃/min 降至500℃再随炉冷却至室温,获得低介超高Q×f值的铝酸盐微波介 电陶瓷样品;
不同x值的样品的微波介电性能如图3所示(x=0作为对照样 品),从图3中可以看出,x=0~0.50时,εr=6.95~9.77,Q×f=49 00~103 300GHz,且当x=0.20时,εr=8.61、Q×f=103 300GHz。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明, 凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等, 均应包含在本发明的保护范围之内。
Claims (6)
1.一种超高品质因素的铝酸盐系微波介电材料,其特征在于,其化学组成为:MgAl2-x (Zn0.5Ti0.5) x O4,其中,0.4<x≤0.5,其烧结温度为1550℃。
2.根据权利要求1所述的一种超高品质因素的铝酸盐系微波介电材料,其特征在于,x= 0.5。
3.权利要求1或2所述的超高品质因素的铝酸盐系微波介电材料的制备方法,其特征在于,包括以下步骤:
(1)称量原料:以MgO、Al2O3、ZnO和TiO2为原料,根据对应摩尔比进行称量,一次球磨,烘料,得烘干料;
(2)预烧:将步骤(1)中所得烘干料,按照2~5℃/min的升温速率升至1100~1450℃,并保温3~6 h,冷却至室温,获得煅烧后的MgAl2-x (Zn0.5Ti0.5) x O4预烧料;
(3)二次球磨:将步骤(2)所得进行二次球磨;
(4)造粒:将步骤(3)所得球磨后的料浆烘干至恒重,进行造粒,得到样品;
(5)制备生坯:将步骤(4)所得样品,按照2~5℃/min的升温速率升至400~600℃并保温3~6 h,冷却至室温,得到排胶后的生坯样品;
(6)烧结:将步骤(5)所得生坯样品,按照2~5℃/min的升温速率升至1550℃并保温3~6 h,再冷却至室温,得到超高品质因素的铝酸盐微波介电材料。
4.根据权利要求3所述的超高品质因素的铝酸盐系微波介电材料的制备方法,其特征在于,步骤(3)中,采用氧化锆磨球和去离子水进行二次球磨。
5.根据权利要求3所述的超高品质因素的铝酸盐系微波介电材料的制备方法,其特征在于,步骤(4)中,造粒时加入20 wt%~30 wt%的PVA溶液。
6.根据权利要求3所述的超高品质因素的铝酸盐系微波介电材料的制备方法,其特征在于,步骤(4)中造粒时压力为20MPa,并压制成直径12mm、厚度4-6mm的圆柱。
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