CN112291920B - High-adhesion low-dielectric-parameter polyimide flexible circuit board - Google Patents
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- CN112291920B CN112291920B CN202011513273.8A CN202011513273A CN112291920B CN 112291920 B CN112291920 B CN 112291920B CN 202011513273 A CN202011513273 A CN 202011513273A CN 112291920 B CN112291920 B CN 112291920B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0326—Organic insulating material consisting of one material containing O
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/28—Treatment by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
The invention discloses a polyimide flexible circuit board with high adhesion and low dielectric parameter, comprising: s1: firstly, dissolving a compound A, a compound B and a compound C in an organic solvent, and reacting for 3-5h at 0-20 ℃ to obtain a reaction solution; s2: coating the reaction solution on a glass plate, and sequentially performing desolvation and imidization at 50 ℃, 100 ℃, 150 ℃, 220 ℃, 250 ℃ and 300 ℃ for 1 hour respectively to obtain a polyimide dry film of a compound D; s3: dissolving the polyimide dry film in dimethyl sulfoxide to obtain a polyimide solution with the solid content of 10%; s4: coating the polyimide solution on a copper foil with the thickness of 5-100 microns, drying the copper foil at 80 ℃ for 2h, drying the copper foil at 150 ℃ for 2h, and then placing the copper foil under an ultraviolet lamp for irradiating for 30-120min, wherein the polyimide surface faces the ultraviolet lamp, and the high-adhesion low-dielectric-parameter polyimide flexible circuit board is obtained. The circuit board prepared by the invention has the advantages of small dielectric constant and dielectric loss and high peel strength.
Description
Technical Field
The invention belongs to the technical field of circuit board manufacturing, and particularly relates to a polyimide flexible circuit board with high adhesion and low dielectric parameter.
Background
The Flexible Copper Clad Laminate (FCCL) is a substrate of a printed circuit board and comprises two types, namely a three-layer flexible copper clad laminate and a two-layer flexible copper clad laminate, wherein the three-layer flexible copper clad laminate is mainly produced and used at present, and the flexible copper clad laminate is generally prepared by bonding a polyimide film or a polyester film with a copper foil through an adhesive, carrying out hot pressing and carrying out post curing. In recent years, with the development of electronic products using flexible printed circuit boards (FPCs) towards high density and miniaturization, the demand for thinner and lighter two-layer flexible copper clad laminates has increased greatly. When the two-layer flexible copper clad laminate is manufactured, the coating method has low cost and relatively simple process realization, and becomes an important development direction.
The first patents issued for two-layer FCCL directly coated on a copper foil with a polyimide resin (PI) prepolymer are sho 61-275325 approved and published in 1986; the earliest published patent for PI resin is Sho 60-243100 (approved and published in 1985). In the patent of Japanese patent laid-open No. 5-175634 approved and published in 7 months 1993, the coating method 2L-FCCL manufacturing technology proposed by five developers such as Nissan iron chemical company Binhuang et al is mature. The Xinri iron company lays the leading position in the aspect of 2L-FCCL. The number of patents approved by the iron chemical company in the new day in this respect is the most in 2005-2006. In the development of a polyimide material for a coating type two-layer process, the most important problems to be faced are: the PI thermal expansion coefficient is different from that of a copper foil greatly, and the problem of size stability, particularly curling, of the finally obtained two-layer FCCL needs to be solved; 2. ensuring enough bonding strength between the polyimide and the copper foil; 3. liquid crystal polymer films are applied to improve the performance of FCCL. The first two of them are the key problems to be solved at first time (U.S. Pat. No. 5372891; U.S. Pat. No. 6133408).
However, the two-layer non-adhesive flexible circuit board manufactured at present has many problems, and cannot meet the requirements of high peeling strength, low dielectric constant, energy consumption reduction and the like.
Disclosure of Invention
The present invention is directed to a polyimide flexible circuit board with high adhesion and low dielectric parameter, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a polyimide flexible circuit board with high adhesion and low dielectric parameter comprises the following steps in sequence:
s1: firstly, sequentially dissolving a compound A, a compound B and a compound C in an organic solvent, and then reacting for 3-5h at the temperature of 0-20 ℃ to obtain reaction liquid for later use;
wherein the structural formula of the compound A is as follows:
the structural formula of the compound B is as follows:
the structural formula of compound C is:
s2: uniformly coating the reaction liquid obtained in the step on a glass plate, firstly, desolvating and imidizing the glass plate under the conditions of 50 ℃ and 1h, and then desolvating and imidizing the glass plate under the conditions of 100 ℃, 150 ℃, 220 ℃, 250 ℃ and 300 ℃ for 1 hour respectively to obtain a polyimide dry film of a compound D;
wherein the structural formula of the compound D is as follows:
s3: dissolving the polyimide dry film obtained in the step in dimethyl sulfoxide to obtain a polyimide solution with the solid content of 10%;
s4: uniformly coating the polyimide solution on a copper foil with the thickness of 5-100 microns, drying the copper foil coated with the polyimide solution at 80 ℃ for 2h, then drying the copper foil at 150 ℃ for 2h, then placing the copper foil under an ultraviolet lamp for irradiating for 30-120min, wherein the polyimide surface faces the ultraviolet lamp, and thus the high-adhesion low-dielectric-parameter polyimide flexible circuit board is obtained.
Preferably, in step S1, the organic solvent includes one or more of dimethyl sulfoxide, N-dimethylformamide, N-dimethylacetamide, butanone, and N-methylpyrrolidone.
In any of the above embodiments, preferably, in step S1, the molar ratio of compound a to compound B to compound C is a: b: c = 20: 30: 49.
in any of the above embodiments, preferably, in step S4, the power of the ultraviolet lamp is 400W, and the wavelength λ is 364nm, so that the light intensity of the surface irradiation is 200 mW/cm2The above.
The invention has the technical effects and advantages that: 1. when the polyimide flexible circuit board with high adhesion and low dielectric parameter is used for preparing the glue-free flexible circuit board, the ultraviolet curing process is adopted, the temperature is low, the operation is simple and convenient, the step that the operation is required in a vacuum oven or a nitrogen-filled oven for preventing the oxidation of copper in the traditional glue-free flexible circuit board manufacturing process is avoided, and the energy consumption is greatly reduced;
2. the flexible circuit board prepared from the polyimide flexible circuit board with high adhesion and low dielectric parameter has low dielectric constant and dielectric loss, and is beneficial to the application of high-frequency printed circuits;
3. the polyimide flexible circuit board with high adhesion and low dielectric parameter has high peeling strength due to the unique ultraviolet curing crosslinking process.
Detailed Description
The following will clearly and completely describe the technical solutions in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
a polyimide flexible circuit board with high adhesion and low dielectric parameter comprises the following steps in sequence:
s1: firstly, sequentially dissolving a compound A, a compound B and a compound C in an organic solvent, and then reacting for 3-5h at the temperature of 0-20 ℃ to obtain reaction liquid for later use;
wherein the structural formula of the compound A is as follows:
the structural formula of the compound B is as follows:
the structural formula of compound C is:
s2: uniformly coating the reaction liquid obtained in the step on a glass plate, firstly, desolvating and imidizing the glass plate under the conditions of 50 ℃ and 1h, and then desolvating and imidizing the glass plate under the conditions of 100 ℃, 150 ℃, 220 ℃, 250 ℃ and 300 ℃ for 1 hour respectively to obtain a polyimide dry film of a compound D;
wherein the structural formula of the compound D is as follows:
s3: dissolving the polyimide dry film obtained in the step in dimethyl sulfoxide to obtain a polyimide solution with the solid content of 10%;
s4: uniformly coating the polyimide solution on a copper foil with the thickness of 5 microns, drying the copper foil coated with the polyimide solution at 80 ℃ for 2h, then drying the copper foil at 150 ℃ for 2h, then placing the copper foil under an ultraviolet lamp for irradiating for 30min, and enabling the polyimide surface to face the ultraviolet lamp, thus obtaining the polyimide flexible circuit board with high adhesion and low dielectric parameter.
Specifically, in step S1, the organic solvent includes one or more of dimethyl sulfoxide, N-dimethylformamide, N-dimethylacetamide, butanone, and N-methylpyrrolidone.
Example 2:
a polyimide flexible circuit board with high adhesion and low dielectric parameter comprises the following steps in sequence:
s1: firstly, sequentially dissolving a compound A, a compound B and a compound C in an organic solvent, and then reacting for 3-5h at the temperature of 0-20 ℃ to obtain reaction liquid for later use;
wherein the structural formula of the compound A is as follows:
the structural formula of the compound B is as follows:
the structural formula of compound C is:
s2: uniformly coating the reaction liquid obtained in the step on a glass plate, firstly, desolvating and imidizing the glass plate under the conditions of 50 ℃ and 1h, and then desolvating and imidizing the glass plate under the conditions of 100 ℃, 150 ℃, 220 ℃, 250 ℃ and 300 ℃ for 1 hour respectively to obtain a polyimide dry film of a compound D;
wherein the structural formula of the compound D is as follows:
s3: dissolving the polyimide dry film obtained in the step in dimethyl sulfoxide to obtain a polyimide solution with the solid content of 10%;
s4: uniformly coating the polyimide solution on a copper foil with the thickness of 18 microns, drying the copper foil coated with the polyimide solution at 80 ℃ for 2h, then drying the copper foil at 150 ℃ for 2h, then placing the copper foil under an ultraviolet lamp for irradiating for 60min, and enabling the polyimide surface to face the ultraviolet lamp, thus obtaining the polyimide flexible circuit board with high adhesion and low dielectric parameter.
Specifically, in step S1, the organic solvent includes one or more of dimethyl sulfoxide, N-dimethylformamide, N-dimethylacetamide, butanone, and N-methylpyrrolidone.
Specifically, in step S1, the molar ratio of compound a to compound B to compound C is a: b: c = 20: 30: 49.
example 3:
a polyimide flexible circuit board with high adhesion and low dielectric parameter comprises the following steps in sequence:
s1: firstly, sequentially dissolving a compound A, a compound B and a compound C in an organic solvent, and then reacting for 3-5h at the temperature of 0-20 ℃ to obtain reaction liquid for later use;
wherein the structural formula of the compound A is as follows:
the structural formula of the compound B is as follows:
the structural formula of compound C is:
s2: uniformly coating the reaction liquid obtained in the step on a glass plate, firstly, desolvating and imidizing the glass plate under the conditions of 50 ℃ and 1h, and then desolvating and imidizing the glass plate under the conditions of 100 ℃, 150 ℃, 220 ℃, 250 ℃ and 300 ℃ for 1 hour respectively to obtain a polyimide dry film of a compound D;
wherein the structural formula of the compound D is as follows:
s3: dissolving the polyimide dry film obtained in the step in dimethyl sulfoxide to obtain a polyimide solution with the solid content of 10%;
s4: uniformly coating the polyimide solution on a copper foil with the thickness of 100 microns, drying the copper foil coated with the polyimide solution at 80 ℃ for 2h, then drying the copper foil at 150 ℃ for 2h, then placing the copper foil under an ultraviolet lamp for irradiating for 120min, and enabling the polyimide surface to face the ultraviolet lamp, thus obtaining the polyimide flexible circuit board with high adhesion and low dielectric parameter.
Specifically, in step S1, the organic solvent includes one or more of dimethyl sulfoxide, N-dimethylformamide, N-dimethylacetamide, butanone, and N-methylpyrrolidone.
Specifically, in step S1, the molar ratio of compound a to compound B to compound C is a: b: c = 20: 30: 49.
specifically, in step S4, the power of the ultraviolet lamp is 400W, and the wavelength λ is 364nm, so that the light intensity of the surface irradiation is 200 mW/cm2The above.
Test example 1:
provided is a low dielectric polyimide circuit board including the steps of:
(1) adding polyimide and a heat-conducting filler into dimethylformamide, and stirring to uniformly mix to obtain polyimide glue solution;
(2) selecting a rolled copper foil with the thickness of 8-80 mu m and subjected to roughening treatment, and coating the polyimide glue solution obtained in the step (1) on the rough surface of one copper foil under the protection of inert gas; performing stage heat treatment in a nitrogen protection oven at 80 ℃, 120 ℃, 185 ℃, 220-260 ℃ and 350-380 ℃ for 5-10min respectively to perform imidization;
(3) covering another copper foil with the same size on the polyimide glue solution to obtain a semi-finished product, and heating to 290-320 ℃ for lamination;
(4) and (4) placing the semi-finished product of the non-adhesive copper-clad plate obtained in the step (3) in a muffle furnace, heating to 390-420 ℃, and treating for 50-80 min under the protection of inert gas to obtain the low dielectric polyimide circuit board.
The circuit boards prepared in examples 1, 2 and 3 and test example 1 were tested, the test standards were common in the industry, the test conditions were adopted in conventional tests, the peel strength, dielectric constant, dielectric dissipation factor, and the like of the circuit boards were tested, and the test results are shown in table 1:
TABLE 1
From the above table, it can be seen that the polyimide flexible circuit board with high adhesion and low dielectric parameter prepared by the invention has small dielectric constant and dielectric loss and high peel strength compared with the prior art.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (4)
1. A polyimide flexible circuit board with high adhesion and low dielectric parameter is characterized in that: the method comprises the following steps in sequence:
s1: firstly, sequentially dissolving a compound A, a compound B and a compound C in an organic solvent, and then reacting for 3-5h at the temperature of 0-20 ℃ to obtain reaction liquid for later use;
wherein the structural formula of the compound A is as follows:
the structural formula of the compound B is as follows:
the structural formula of compound C is:
s2: uniformly coating the reaction liquid obtained in the step on a glass plate, firstly, desolvating and imidizing the glass plate under the conditions of 50 ℃ and 1h, and then desolvating and imidizing the glass plate under the conditions of 100 ℃, 150 ℃, 220 ℃, 250 ℃ and 300 ℃ for 1 hour respectively to obtain a polyimide dry film of a compound D;
wherein the structural formula of the compound D is as follows:
s3: dissolving the polyimide dry film obtained in the step in dimethyl sulfoxide to obtain a polyimide solution with the solid content of 10%;
s4: uniformly coating the polyimide solution on a copper foil with the thickness of 5-100 microns, drying the copper foil coated with the polyimide solution at 80 ℃ for 2h, then drying the copper foil at 150 ℃ for 2h, then placing the copper foil under an ultraviolet lamp for irradiating for 30-120min, wherein the polyimide surface faces the ultraviolet lamp, and thus the high-adhesion low-dielectric-parameter polyimide flexible circuit board is obtained.
2. A high adhesion, low dielectric parameter polyimide flexible circuit board as defined in claim 1, wherein: in step S1, the organic solvent includes one or more of dimethyl sulfoxide, N-dimethylformamide, N-dimethylacetamide, butanone, and N-methylpyrrolidone.
3. A high adhesion, low dielectric parameter polyimide flexible circuit board as defined in claim 1, wherein: in step S1, the molar ratio of compound a, compound B, and compound C is a: b: c = 20: 30: 49.
4. a high adhesion, low dielectric parameter polyimide flexible circuit board as defined in claim 1, wherein: in step S4, the power of the ultraviolet lamp is 400W, the wavelength lambda is 364nm, and the light intensity of the surface irradiation reaches 200 mW/cm2The above.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0820721A (en) * | 1994-07-05 | 1996-01-23 | Shin Etsu Chem Co Ltd | Polyimide film and its production |
| CN1872896A (en) * | 2005-06-03 | 2006-12-06 | 长春人造树脂厂股份有限公司 | New type polyimide resin, and preparation method |
| CN101454378A (en) * | 2006-07-07 | 2009-06-10 | 三菱瓦斯化学株式会社 | Polyimide resin |
| CN101724266A (en) * | 2008-10-20 | 2010-06-09 | 比亚迪股份有限公司 | Polyimide material, preparation method thereof, metal laminated plate containing same and preparation method thereof |
| CN101834015A (en) * | 2010-03-31 | 2010-09-15 | 鞍山华辉光电子材料科技有限公司 | Flexible transparent conducting film for polyimide substrate and preparation method thereof |
-
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- 2020-12-21 CN CN202011513273.8A patent/CN112291920B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0820721A (en) * | 1994-07-05 | 1996-01-23 | Shin Etsu Chem Co Ltd | Polyimide film and its production |
| CN1872896A (en) * | 2005-06-03 | 2006-12-06 | 长春人造树脂厂股份有限公司 | New type polyimide resin, and preparation method |
| CN101454378A (en) * | 2006-07-07 | 2009-06-10 | 三菱瓦斯化学株式会社 | Polyimide resin |
| CN101724266A (en) * | 2008-10-20 | 2010-06-09 | 比亚迪股份有限公司 | Polyimide material, preparation method thereof, metal laminated plate containing same and preparation method thereof |
| CN101834015A (en) * | 2010-03-31 | 2010-09-15 | 鞍山华辉光电子材料科技有限公司 | Flexible transparent conducting film for polyimide substrate and preparation method thereof |
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