CN112290379B - Vcsel芯片及其制造方法 - Google Patents
Vcsel芯片及其制造方法 Download PDFInfo
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- CN112290379B CN112290379B CN202011585888.1A CN202011585888A CN112290379B CN 112290379 B CN112290379 B CN 112290379B CN 202011585888 A CN202011585888 A CN 202011585888A CN 112290379 B CN112290379 B CN 112290379B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
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Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011585888.1A CN112290379B (zh) | 2020-12-29 | 2020-12-29 | Vcsel芯片及其制造方法 |
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CN202011585888.1A CN112290379B (zh) | 2020-12-29 | 2020-12-29 | Vcsel芯片及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN112290379A CN112290379A (zh) | 2021-01-29 |
CN112290379B true CN112290379B (zh) | 2021-04-30 |
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CN202011585888.1A Active CN112290379B (zh) | 2020-12-29 | 2020-12-29 | Vcsel芯片及其制造方法 |
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CN (1) | CN112290379B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114204414A (zh) * | 2021-11-16 | 2022-03-18 | 深圳市德明利光电有限公司 | 一种光学路径可控高导热、低电阻的vcsel制作方法及vcsel |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
CN1242633A (zh) * | 1998-07-16 | 2000-01-26 | 中国科学院半导体研究所 | 单模垂直腔面发射半导体激光器 |
DE102008030844A1 (de) * | 2008-06-30 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen |
CN101651287A (zh) * | 2008-08-14 | 2010-02-17 | 索尼株式会社 | 垂直腔面发射激光器 |
CN110829179A (zh) * | 2019-12-11 | 2020-02-21 | 长春中科长光时空光电技术有限公司 | 一种垂直腔面发射激光器及其制作方法 |
CN111817129A (zh) * | 2020-08-31 | 2020-10-23 | 江西铭德半导体科技有限公司 | 一种vcsel芯片及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW529211B (en) * | 2001-03-07 | 2003-04-21 | Ying-Jay Yang | Device structure and method for fabricating semiconductor lasers |
US20050265415A1 (en) * | 2004-05-28 | 2005-12-01 | Lambkin John D | Laser diode and method of manufacture |
JP4605024B2 (ja) * | 2006-01-12 | 2011-01-05 | セイコーエプソン株式会社 | 面発光型半導体レーザ |
JP4967463B2 (ja) * | 2006-06-06 | 2012-07-04 | 富士ゼロックス株式会社 | 面発光型半導体レーザ装置 |
-
2020
- 2020-12-29 CN CN202011585888.1A patent/CN112290379B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5258316A (en) * | 1992-03-26 | 1993-11-02 | Motorola, Inc. | Patterened mirror vertical cavity surface emitting laser |
CN1242633A (zh) * | 1998-07-16 | 2000-01-26 | 中国科学院半导体研究所 | 单模垂直腔面发射半导体激光器 |
DE102008030844A1 (de) * | 2008-06-30 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen |
CN101651287A (zh) * | 2008-08-14 | 2010-02-17 | 索尼株式会社 | 垂直腔面发射激光器 |
CN110829179A (zh) * | 2019-12-11 | 2020-02-21 | 长春中科长光时空光电技术有限公司 | 一种垂直腔面发射激光器及其制作方法 |
CN111817129A (zh) * | 2020-08-31 | 2020-10-23 | 江西铭德半导体科技有限公司 | 一种vcsel芯片及其制造方法 |
Non-Patent Citations (1)
Title |
---|
Transverse mode control in longmonolithic-cavity VCSELs with temperature-profile control;T.Uchida et al.;《Electronics letters》;20060119;第42卷(第2期);第94-96页 * |
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Publication number | Publication date |
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CN112290379A (zh) | 2021-01-29 |
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PB01 | Publication | ||
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CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Qiu Bocang Inventor after: Li Chunyong Inventor after: Shu Kai Inventor after: Ke Maolong Inventor after: Xu Huayong Inventor after: Feng Ou Inventor before: Qiu Bocang Inventor before: Li Chunyong Inventor before: Shu Kai Inventor before: Ke Maolong Inventor before: Xu Huayong Inventor before: Feng Ou |
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TR01 | Transfer of patent right |
Effective date of registration: 20211020 Address after: 330000 South of Fushan Avenue and West of Jinhu Lake, Xiaolan Economic and Technological Development Zone, Nanchang City, Jiangxi Province Patentee after: JIANGXI DERAY PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 330000, 2nd floor, Derui photoelectric building, south of Fushan Avenue and west of Jinhu, Nanchang County, Nanchang City, Jiangxi Province Patentee before: Jiangxi Mingde Semiconductor Technology Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: VCSEL chip and its manufacturing method Effective date of registration: 20230412 Granted publication date: 20210430 Pledgee: Nanchang County Sub branch of Bank of Beijing Co.,Ltd. Pledgor: JIANGXI DERAY PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Registration number: Y2023980037902 |