CN112209712A - 一种高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法 - Google Patents
一种高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 119
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000010936 titanium Substances 0.000 claims abstract description 11
- 239000011734 sodium Substances 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 45
- 229910052709 silver Inorganic materials 0.000 claims description 45
- 239000004332 silver Substances 0.000 claims description 45
- 239000002994 raw material Substances 0.000 claims description 37
- 238000005245 sintering Methods 0.000 claims description 25
- 239000000843 powder Substances 0.000 claims description 21
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000003921 oil Substances 0.000 claims description 12
- 238000005303 weighing Methods 0.000 claims description 12
- 238000001238 wet grinding Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 230000010287 polarization Effects 0.000 claims description 9
- 238000007873 sieving Methods 0.000 claims description 9
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 7
- 239000005751 Copper oxide Substances 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 7
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 7
- 239000004408 titanium dioxide Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 230000002431 foraging effect Effects 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000002372 labelling Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 abstract description 7
- 238000012986 modification Methods 0.000 abstract description 7
- 230000036541 health Effects 0.000 abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052787 antimony Inorganic materials 0.000 abstract description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 abstract description 4
- 229910052573 porcelain Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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Abstract
本发明公开了一种高压电常数的铌酸钾钠基无铅压电陶瓷,所述高压电常数的铌酸钾钠基无铅压电陶瓷的化学组成为:(1‑x)(K0.5Na0.5)Nb1‑ySbyO3+xCuZr0.5Ti0.5O3,其中,x,y为摩尔百分比,0≤x≤0.4,0.01≤y≤0.2。本发明的高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法,采用铜、锑、锆和钛元素进行掺杂改性,实现电荷和空位补偿,提高其压电常数,增加无铅压电陶瓷压电敏感性。本发明采用铌酸钾钠基无铅压电陶瓷具有高压电常数,大大拓宽了无铅压电陶瓷应用场景,同时无铅压电陶瓷绿色环保,可有效减少对人类健康和环境的损害。
Description
技术领域
本发明涉及无铅压电陶瓷技术领域,具体涉及一种高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法。
背景技术
压电材料能够实现机械能和电能之间的相互转换,在信息、电子、精密仪器和超声检测等技术领域具有广泛应用。目前普遍使用的是锆钛酸铅(PZT)基压电材料,在PZT压电材料中,铅(Pb)元素约占材料总重量的70%,这类陶瓷材料在生产、使用以及废弃处理过程中都会给人类健康和生态环境造成十分严重的损害。铌酸钾钠基无铅压电陶瓷具有较强的压电性能,通过配方体系和制备方法改进,在提高压电常数方面具有进一步提升空间,继而大幅扩宽无铅压电陶瓷应用空间。
基于上述情况,本发明提出了一种高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法,可有效解决以上问题。
发明内容
本发明的目的在于提供一种高机械品质因数和低介电损耗的高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法。本发明的高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法,采用铜、锑、锆和钛元素进行掺杂改性,实现电荷和空位补偿,提高其压电常数,增加无铅压电陶瓷压电敏感性。本发明采用铌酸钾钠基无铅压电陶瓷具有高压电常数,大大拓宽了无铅压电陶瓷应用场景,同时无铅压电陶瓷绿色环保,可有效减少对人类健康和环境的损害。
为解决以上技术问题,本发明提供的技术方案是:
一种高压电常数的铌酸钾钠基无铅压电陶瓷,所述高压电常数的铌酸钾钠基无铅压电陶瓷的化学组成为:(1-x)(K0.5Na0.5)Nb1-ySbyO3+xCuZr0.5Ti0.5O3,其中,x,y为摩尔百分比,0≤x≤0.4,0.01≤y≤0.2。
本发明的高压电常数的铌酸钾钠基无铅压电陶瓷及其制备方法,采用铜、锑、锆和钛元素进行掺杂改性,实现电荷和空位补偿,提高其压电常数,增加无铅压电陶瓷压电敏感性。本发明采用铌酸钾钠基无铅压电陶瓷具有高压电常数,大大拓宽了无铅压电陶瓷应用场景,同时无铅压电陶瓷绿色环保,可有效减少对人类健康和环境的损害。
优选的,所述的高压电常数的铌酸钾钠基无铅压电陶瓷的制备方法,包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、三氧化二锑、氧化铜、二氧化锆和二氧化钛放入培养皿,置于烘箱内,在120-150℃下保温3-6h;
2)称料混合:按所述高压电常数的铌酸钾钠基无铅压电陶瓷的化学组成为配比称量经步骤1)预处理后的原料,分散于无水乙醇中,混合均匀后烘干,粉碎过筛,制成预混粉;
3)预烧:将所述预混粉置于箱式炉中连续升温至850-1050℃,保温4-8h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将所述预烧粉干压成型为生坯,在气氛烧结炉中于1150-1480℃下保温6-12h,得到致密的压电陶瓷片;
5)后处理:将烧结好的所述压电陶瓷片加工成所需形状,两侧均匀涂上银层,标注正负极后极化老化得到所述成品铌酸钾钠基无铅压电陶瓷。
优选的,步骤2)中,预处理后的原料分散于无水乙醇后,通过球磨机湿磨混合均匀,所述球磨机的转速为200-800rpm,湿磨时间为24-48h。
优选的,步骤4)中,所述气氛烧结炉中的烧结气为空气或氧气,气压为0.1-0.5MPa。
优选的,步骤5)中,所述两侧均匀涂上银层为:在压电陶瓷片的两表面丝网印刷上厚度为0.01mm的银浆,在150℃下烘干,随后在箱式炉中升温至500-600℃,保温60min后降温至室温,得到被银陶瓷片。
优选的,步骤5)中,所述极化老化为:将标注有正负极的被银陶瓷片放入装有硅油的极化装置中,油浴加热至80-120℃,在3-5kV/mm的电压下极化20-30min,然后在室温下放置24h老化,得到所述高压电常数的铌酸钾钠基无铅压电陶瓷。
本发明与现有技术相比,具有以下优点及有益效果:
本发明的高压电常数的铌酸钾钠基无铅压电陶瓷通过精选原料组成,并优化各原料含量,且采用直接干压成型、气氛烧结的方式,严格控制各步骤的工艺条件参数(工艺条件参数的控制是获得性能良好的高压电常数的铌酸钾钠基无铅压电陶瓷的关键,只有工艺条件参数控制在合适的范围内,才能保证高压电常数的铌酸钾钠基无铅压电陶瓷的质量),制备成了致密度高、电性能好的铌酸钾钠基无铅压电陶瓷,该压电陶瓷的压电常数大大提高,达到400pC/N以上,平面机电耦合常数为0.48-0.52,可以拓宽无铅压电陶瓷的应用场景。
本发明制备得到的高压电常数的铌酸钾钠基无铅压电陶瓷可取代传统的含铅压电陶瓷,在信息、电子、精密仪器和超声检测等技术领域广泛应用,绿色环保,可有效避免含铅压电陶瓷材料在生产、使用和废弃过程中带来的铅污染,减少对人类健康和生态环境造成的损害。
本发明的高压电常数的铌酸钾钠基无铅压电陶瓷选择了适当配比的碳酸钾、碳酸钠、五氧化二铌和辅料,所述辅料为三氧化二锑、氧化铜、二氧化锆和二氧化钛;
本发明在合成铌酸钾钠基无铅压电陶瓷的过程中,采用掺杂改性和复合添加的方法,并严格控制各步骤的工艺条件参数,工艺条件参数的控制是获得性能良好的高压电常数的铌酸钾钠基无铅压电陶瓷的关键,只有工艺条件参数控制在合适的范围内,才能保证高压电常数的铌酸钾钠基无铅压电陶瓷的质量,活化了压电微区,有效提高了铌酸钾钠基无铅压电陶瓷的压电常数。
具体实施方式
为了使本领域的技术人员更好地理解本发明的技术方案,下面结合具体实施例对本发明的优选实施方案进行描述,但是不能理解为对本专利的限制。
下述实施例中所述试验方法或测试方法,如无特殊说明,均为常规方法;所述试剂和材料,如无特殊说明,均从常规商业途径获得,或以常规方法制备。
实施例1:
一种高压电常数的铌酸钾钠基无铅压电陶瓷,所述高压电常数的铌酸钾钠基无铅压电陶瓷的化学组成为:(1-x)(K0.5Na0.5)Nb1-ySbyO3+xCuZr0.5Ti0.5O3,其中,x,y为摩尔百分比,0≤x≤0.4,0.01≤y≤0.2。
优选的,所述的高压电常数的铌酸钾钠基无铅压电陶瓷的制备方法,包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、三氧化二锑、氧化铜、二氧化锆和二氧化钛放入培养皿,置于烘箱内,在120-150℃下保温3-6h;
2)称料混合:按所述高压电常数的铌酸钾钠基无铅压电陶瓷的化学组成为配比称量经步骤1)预处理后的原料,分散于无水乙醇中,混合均匀后烘干,粉碎过筛,制成预混粉;
3)预烧:将所述预混粉置于箱式炉中连续升温至850-1050℃,保温4-8h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将所述预烧粉干压成型为生坯,在气氛烧结炉中于1150-1480℃下保温6-12h,得到致密的压电陶瓷片;
5)后处理:将烧结好的所述压电陶瓷片加工成所需形状,两侧均匀涂上银层,标注正负极后极化老化得到所述成品铌酸钾钠基无铅压电陶瓷。
优选的,步骤2)中,预处理后的原料分散于无水乙醇后,通过球磨机湿磨混合均匀,所述球磨机的转速为200-800rpm,湿磨时间为24-48h。
优选的,步骤4)中,所述气氛烧结炉中的烧结气为空气或氧气,气压为0.1-0.5MPa。
优选的,步骤5)中,所述两侧均匀涂上银层为:在压电陶瓷片的两表面丝网印刷上厚度为0.01mm的银浆,在150℃下烘干,随后在箱式炉中升温至500-600℃,保温60min后降温至室温,得到被银陶瓷片。
优选的,步骤5)中,所述极化老化为:将标注有正负极的被银陶瓷片放入装有硅油的极化装置中,油浴加热至80-120℃,在3-5kV/mm的电压下极化20-30min,然后在室温下放置24h老化,得到所述高压电常数的铌酸钾钠基无铅压电陶瓷。
实施例2:
一种高压电常数的铌酸钾钠基无铅压电陶瓷,包含以下原子百分比的化学组成,95%的(K0.5Na0.5)Nb0.9Sb0.1O3和5%的CuZr0.5Ti0.5O3,制备方法包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、三氧化二锑、氧化铜、二氧化锆和二氧化钛放入培养皿,置于烘箱内,在120℃下保温5h;
2)称料混合:按所述化学组成配比称量预处理后的原料,分散于无水乙醇中,放入球磨机湿磨,球磨机的转速为500rpm,湿磨时间为36h,湿磨结束后取出放入烘箱烘干,用玛瑙研钵磨碎,过80目筛,制成干粉;
3)预烧:将预混粉置于箱式炉中连续升温至900℃,保温8h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将预烧粉干压成型为生坯,在0.1MPa氧气气氛烧结炉中于1250℃下保温10h,得到致密的压电陶瓷片;
5)后处理:将烧结好的压电陶瓷片加工成所需形状,在两侧均匀涂上银层,烧银温度为600℃;在被银陶瓷片两侧电极分别标注正负极,放入装有硅油的极化装置中,油浴加热至80℃,在3kV/mm的电压下极化30min,然后在室温下放置24h老化,得到所述高压电常数的铌酸钾钠基无铅压电陶瓷。
将本实施例得到的所述高压电常数的铌酸钾钠基无铅压电陶瓷制作成直径20mm的压电陶瓷片,压电常数测试为486pC/N。
实施例3:
一种高压电常数的铌酸钾钠基无铅压电陶瓷,包含以下原子百分比的化学组成,90%的(K0.5Na0.5)Nb0.92Sb0.08O3和10%的CuZr0.5Ti0.5O3,制备方法包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、三氧化二锑、氧化铜、二氧化锆和二氧化钛放入培养皿,置于烘箱内,在130℃下保温4h;
2)称料混合:按所述化学组成配比称量预处理后的原料,分散于无水乙醇中,放入球磨机湿磨,球磨机的转速为400rpm,湿磨时间为48h,湿磨结束后取出放入烘箱烘干,用玛瑙研钵磨碎,过80目筛,制成干粉;
3)预烧:将预混粉置于箱式炉中连续升温至950℃,保温7h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将预烧粉干压成型为生坯,在0.1MPa空气气氛烧结炉中于1300℃下保温8h,得到致密的压电陶瓷片;
5)后处理:将烧结好的压电陶瓷片加工成所需形状,在两侧均匀涂上银层,烧银温度为600℃;在被银陶瓷片两侧电极分别标注正负极,放入装有硅油的极化装置中,油浴加热至90℃,在3kV/mm的电压下极化25min,然后在室温下放置24h老化,得到所述高压电常数的铌酸钾钠基无铅压电陶瓷。
将本实施例得到的所述高压电常数的铌酸钾钠基无铅压电陶瓷制作成直径20mm的压电陶瓷片,压电常数测试为432pC/N。
实施例4:
一种高压电常数的铌酸钾钠基无铅压电陶瓷,包含以下原子百分比的化学组成,85%的(K0.5Na0.5)Nb0.85Sb0.15O3和15%的CuZr0.5Ti0.5O3,制备方法包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、三氧化二锑、氧化铜、二氧化锆和二氧化钛放入培养皿,置于烘箱内,在140℃下保温3h;
2)称料混合:按所述化学组成配比称量预处理后的原料,分散于无水乙醇中,放入球磨机湿磨,球磨机的转速为600rpm,湿磨时间为24h,湿磨结束后取出放入烘箱烘干,用玛瑙研钵磨碎,过80目筛,制成干粉;
3)预烧:将预混粉置于箱式炉中连续升温至1000℃,保温6h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将预烧粉干压成型为生坯,在0.1MPa空气气氛烧结炉中于1400℃下保温6h,得到致密的压电陶瓷片;
5)后处理:将烧结好的压电陶瓷片加工成所需形状,在两侧均匀涂上银层,烧银温度为600℃;在被银陶瓷片两侧电极分别标注正负极,放入装有硅油的极化装置中,油浴加热至100℃,在3kV/mm的电压下极化20min,然后在室温下放置24h老化,得到所述高压电常数的铌酸钾钠基无铅压电陶瓷。
将本实施例得到的所述高压电常数的铌酸钾钠基无铅压电陶瓷制作成直径20mm的压电陶瓷片,压电常数测试为513pC/N。
本发明的高压电常数的铌酸钾钠基无铅压电陶瓷,采用铜、锑、锆和钛元素进行掺杂改性,实现电荷和空位补偿,提高其压电常数,增加无铅压电陶瓷压电敏感性。本发明采用铌酸钾钠基无铅压电陶瓷具有高压电常数,大大拓宽了无铅压电陶瓷应用场景,同时无铅压电陶瓷绿色环保,可有效减少对人类健康和环境的损害。
以上仅是本发明的优选实施方式,应当指出的是,上述优选实施方式不应视为对本发明的限制,本发明的保护范围应当以权利要求所限定的范围为准。对于本技术领域的普通技术人员来说,在不脱离本发明的精神和范围内,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (6)
1.一种高压电常数的铌酸钾钠基无铅压电陶瓷,其特征在于,所述高压电常数的铌酸钾钠基无铅压电陶瓷的化学组成为:(1-x)(K0.5Na0.5)Nb1-ySbyO3+xCuZr0.5Ti0.5O3,其中,x,y为摩尔百分比,0≤x≤0.4,0.01≤y≤0.2。
2.根据权利要求1所述的高压电常数的铌酸钾钠基无铅压电陶瓷的制备方法,其特征在于,包括以下步骤:
1)原料预处理:将碳酸钾、碳酸钠、五氧化二铌、三氧化二锑、氧化铜、二氧化锆和二氧化钛放入培养皿,置于烘箱内,在120-150℃下保温3-6h;
2)称料混合:按所述高压电常数的铌酸钾钠基无铅压电陶瓷的化学组成为配比称量经步骤1)预处理后的原料,分散于无水乙醇中,混合均匀后烘干,粉碎过筛,制成预混粉;
3)预烧:将所述预混粉置于箱式炉中连续升温至850-1050℃,保温4-8h,降温至室温后粉碎过筛,得到预烧粉;
4)烧结:将所述预烧粉干压成型为生坯,在气氛烧结炉中于1150-1480℃下保温6-12h,得到致密的压电陶瓷片;
5)后处理:将烧结好的所述压电陶瓷片加工成所需形状,两侧均匀涂上银层,标注正负极后极化老化得到所述成品铌酸钾钠基无铅压电陶瓷。
3.根据权利要求2所述的高压电常数的铌酸钾钠基无铅压电陶瓷的制备方法,其特征在于,步骤2)中,预处理后的原料分散于无水乙醇后,通过球磨机湿磨混合均匀,所述球磨机的转速为200-800rpm,湿磨时间为24-48h。
4.根据权利要求2所述的高压电常数的铌酸钾钠基无铅压电陶瓷的制备方法,其特征在于,步骤4)中,所述气氛烧结炉中的烧结气为空气或氧气,气压为0.1-0.5MPa。
5.根据权利要求2所述的高压电常数的铌酸钾钠基无铅压电陶瓷的制备方法,其特征在于,步骤5)中,所述两侧均匀涂上银层为:在压电陶瓷片的两表面丝网印刷上厚度为0.01mm的银浆,在150℃下烘干,随后在箱式炉中升温至500-600℃,保温60min后降温至室温,得到被银陶瓷片。
6.根据权利要求5所述的高压电常数的铌酸钾钠基无铅压电陶瓷的制备方法,其特征在于,步骤5)中,所述极化老化为:将标注有正负极的被银陶瓷片放入装有硅油的极化装置中,油浴加热至80-120℃,在3-5kV/mm的电压下极化20-30min,然后在室温下放置24h老化,得到所述高压电常数的铌酸钾钠基无铅压电陶瓷。
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