CN112204715A - 使用原子层沉积法在基片上形成薄膜的方法或装置 - Google Patents

使用原子层沉积法在基片上形成薄膜的方法或装置 Download PDF

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CN112204715A
CN112204715A CN201980035657.2A CN201980035657A CN112204715A CN 112204715 A CN112204715 A CN 112204715A CN 201980035657 A CN201980035657 A CN 201980035657A CN 112204715 A CN112204715 A CN 112204715A
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precursor
gas
supply
substrate
film
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Chinese (zh)
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加贺谷宗仁
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
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    • H01—ELECTRIC ELEMENTS
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
CN201980035657.2A 2018-06-06 2019-05-27 使用原子层沉积法在基片上形成薄膜的方法或装置 Pending CN112204715A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018108896A JP7073924B2 (ja) 2018-06-06 2018-06-06 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置
JP2018-108896 2018-06-06
PCT/JP2019/020933 WO2019235288A1 (ja) 2018-06-06 2019-05-27 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置

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US (1) US20210217609A1 (enExample)
JP (1) JP7073924B2 (enExample)
KR (1) KR102612704B1 (enExample)
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WO (1) WO2019235288A1 (enExample)

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FI126168B (en) 2012-09-18 2016-07-29 Novaldmedical Ltd Oy A method for coating pharmaceutical substrates
WO2017147318A1 (en) 2016-02-23 2017-08-31 The Regents Of The University Of Colorado, A Body Corporate Compositions and methods for making and using thermostable immunogenic formulations with increased compatibility of use as vaccines against one or more pathogens
CN111712235A (zh) 2018-01-16 2020-09-25 应用材料公司 金属氧化物包封的药物组合物及其制备方法
KR20220107635A (ko) 2021-01-25 2022-08-02 에스케이하이닉스 주식회사 선택적 영역 증착 방법 및 이를 적용한 전자 소자의 제조 방법
US12322592B2 (en) 2021-02-12 2025-06-03 Applied Materials, Inc. Deposition of silicon-based dielectric films
KR102722199B1 (ko) * 2021-05-10 2024-10-28 도쿄엘렉트론가부시키가이샤 질화티타늄막의 성막 방법, 및 질화티타늄막을 성막하는 장치
JP7683383B2 (ja) * 2021-07-27 2025-05-27 東京エレクトロン株式会社 窒化チタン膜を形成する方法、及び窒化チタン膜を形成する装置
JP7674064B2 (ja) * 2021-09-16 2025-05-09 東京エレクトロン株式会社 成膜方法及び成膜装置
EP4408402A4 (en) 2021-09-30 2025-08-06 Applied Materials Inc LOW TEMPERATURE SILICON OXIDE COATING FOR PHARMACEUTICAL APPLICATIONS
JP2025501906A (ja) * 2021-12-30 2025-01-24 ドンジン セミケム カンパニー リミテッド 絶縁膜パターン形成方法、パターン形成に用いられる前駆体及び半導体素子
JP7719735B2 (ja) * 2022-02-18 2025-08-06 キオクシア株式会社 半導体製造装置
EP4518844A1 (en) * 2022-05-06 2025-03-12 Applied Materials, Inc. Ozone-based low temperature silicon oxide coating for pharmaceutical applications
WO2024020132A1 (en) * 2022-07-22 2024-01-25 Applied Materials, Inc. Method of depositing silicon based dielectric film
KR20240081741A (ko) * 2022-11-30 2024-06-10 주식회사 동진쎄미켐 절연막 패턴 형성 방법 및 반도체 소자
WO2025187589A1 (ja) * 2024-03-05 2025-09-12 富士フイルム株式会社 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法、化合物

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286711A (ja) * 2005-03-31 2006-10-19 Mitsui Eng & Shipbuild Co Ltd シリコン酸化膜の形成方法
JP2006309733A (ja) * 2005-03-28 2006-11-09 Hitachi Information Systems Ltd Ｒｆｉｄタグシステム及び該ｒｆｉｄタグシステム用の通信システム
CN101154589A (zh) * 2006-09-28 2008-04-02 东京毅力科创株式会社 形成硅氧化膜的成膜方法和装置
JP2008258591A (ja) * 2007-02-27 2008-10-23 Air Products & Chemicals Inc ケイ素含有膜の周期的プラズマ化学気相堆積
JP2014090181A (ja) * 2013-11-25 2014-05-15 Tokyo Electron Ltd 成膜装置、成膜方法及び記憶媒体
CN104681386A (zh) * 2013-11-29 2015-06-03 株式会社日立国际电气 衬底处理装置、衬底处理方法及半导体器件的制造方法
CN105390437A (zh) * 2014-08-20 2016-03-09 朗姆研究公司 用于选择性超低k孔密封的可流动电介质
CN106715752A (zh) * 2014-09-19 2017-05-24 凸版印刷株式会社 成膜装置以及成膜方法
CN107680903A (zh) * 2016-07-29 2018-02-09 朗姆研究公司 用于半导体图案化应用的掺杂ald膜

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1777697B (zh) * 2003-04-23 2011-06-22 集勒思公司 瞬时增强原子层沉积
US7674393B2 (en) * 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
JP5270476B2 (ja) 2009-07-07 2013-08-21 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US9685320B2 (en) * 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US9543158B2 (en) * 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10176984B2 (en) * 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006309733A (ja) * 2005-03-28 2006-11-09 Hitachi Information Systems Ltd Ｒｆｉｄタグシステム及び該ｒｆｉｄタグシステム用の通信システム
JP2006286711A (ja) * 2005-03-31 2006-10-19 Mitsui Eng & Shipbuild Co Ltd シリコン酸化膜の形成方法
CN101154589A (zh) * 2006-09-28 2008-04-02 东京毅力科创株式会社 形成硅氧化膜的成膜方法和装置
US20080081104A1 (en) * 2006-09-28 2008-04-03 Kazuhide Hasebe Film formation method and apparatus for forming silicon oxide film
JP2008258591A (ja) * 2007-02-27 2008-10-23 Air Products & Chemicals Inc ケイ素含有膜の周期的プラズマ化学気相堆積
JP2014090181A (ja) * 2013-11-25 2014-05-15 Tokyo Electron Ltd 成膜装置、成膜方法及び記憶媒体
CN104681386A (zh) * 2013-11-29 2015-06-03 株式会社日立国际电气 衬底处理装置、衬底处理方法及半导体器件的制造方法
CN105390437A (zh) * 2014-08-20 2016-03-09 朗姆研究公司 用于选择性超低k孔密封的可流动电介质
CN106715752A (zh) * 2014-09-19 2017-05-24 凸版印刷株式会社 成膜装置以及成膜方法
CN107680903A (zh) * 2016-07-29 2018-02-09 朗姆研究公司 用于半导体图案化应用的掺杂ald膜

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