CN112201647A - 一种高密度互连芯片结构 - Google Patents
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Abstract
本申请公开了一种高密度互连芯片结构,所述高密度互连芯片结构包括:芯片组件,所述芯片组件包括互连的功能芯片和连接芯片;及基板,所述功能芯片连接至所述基板的第一表面,所述第一表面设有凹槽,所述凹槽位于所述功能芯片在所述基板的投影区,所述凹槽容纳填充胶,所述填充胶的粘度随着温度升高而增大,所述连接芯片设置于所述凹槽内。本申请通过在凹槽设置填充胶,该填充胶的粘度随着温度升高而增大,填充胶能够支持连接芯片,使得连接芯片与功能芯片之间的间隙保持不变,第二焊点冷却至常温,第二焊点依旧能够连接连接芯片与功能芯片。
Description
技术领域
本申请涉及芯片技术领域,尤其涉及一种高密度互连芯片结构。
背景技术
多芯片组件(MCM)封装是将多个芯片封装在一个基板上,完成一定的电路功能。在多芯片组件XY二维封装的基础上向Z方向发展出现了三维多芯片组件(3D-MCM)。它是将芯片沿Z轴叠层在一起,更大限度地提高封装密度,缩小封装尺寸。
3D封装包括埋置式,将正装互连芯片连接两颗或更多倒装功能芯片,由于空间不够正装芯片需在基板挖槽放置。然而,正装互连芯片与倒装功能芯片焊接时,容易出现焊接不良的问题。
发明内容
因此,本发明提供一种高密度互连芯片结构,至少部分地解决上面提到的问题。
本发明提供了一种高密度互连芯片结构,该高密度互连芯片结构包括:芯片组件和基板。
所述芯片组件包括互连的功能芯片和连接芯片;
所述功能芯片连接至所述基板的第一表面,所述第一表面设有凹槽,所述凹槽位于所述功能芯片在所述基板的投影区,所述凹槽容纳填充胶,所述填充胶的粘度随着温度升高而增大,所述连接芯片设置于所述凹槽内。
作为可实现的优选方式,所述凹槽的深度大于所述连接芯片的厚度。
作为可实现的优选方式,还包括第一焊点,所述第一焊点用于连接所述功能芯片与所述基板,所述第一焊点设置于所述凹槽外的四周。
作为可实现的优选方式,所述第一焊点的熔融温度高于所述填充胶的凝固温度。
作为可实现的优选方式,所述第一焊点呈阵列布置。
作为可实现的优选方式,还包括第二焊点,所述第二焊带用于连接所述功能芯片与所述连接芯片,所述第二焊点设置于所述功能芯片或所述连接芯片。
作为可实现的优选方式,所述第二焊点的熔融温度高于所述填充胶的凝固温度。
作为可实现的优选方式,所述第二焊点呈阵列布置。
作为可实现的优选方式,所述基板是印制电路板,由陶瓷或层压板制成的多层布线板。
本申请通过在凹槽设置填充胶,该填充胶的粘度随着温度升高而增大,填充胶能够支持连接芯片,使得连接芯片与功能芯片之间的间隙保持不变,第二焊点冷却至常温,第二焊点依旧能够连接连接芯片与功能芯片;填充胶能够均布铺设与凹槽的底部,填充胶水平支撑连接芯片;降低凹槽的加工难度;填充胶的凝固温度与第一焊点的熔融温度相等,使得互连芯片的上表面与功能芯片的下表面之间的距离时时为定值。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述,本申请的其它特征、目的和优点将会变得更明显:
图1是现有技术的一种高密度互连芯片结构的结构示意图;
图2是现有技术的一种高密度互连芯片结构的结构示意图;
图3是根据本申请的实施方式的第一种高密度互连芯片结构的结构示意图;
图4是图3的俯视图。
具体实施方式
下面结合附图和实施例对本申请作进一步的详细说明。可以理解的是,此处所描述的具体实施例仅仅用于解释相关申请,而非对该申请的限定。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。另外还需要说明的是,为了便于描述,附图中仅示出了与申请相关的部分。
在本申请的描述中,需要理解的是,术语“径向”、“轴向”、“上“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。在本申请的描述中,除非另有说明,“多个”的含义是两个或两个以上。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“设置”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接:可以是直接相连,也可以通过中间媒介间接相连。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。
多芯片组件封装是将多个芯片封装在一个基板20上,完成一定的电路功能。在多芯片组件XY二维封装的基础上向Z方向发展出现了三维多芯片组件。它是将芯片沿Z轴叠层在一起,更大限度地提高封装密度,缩小封装尺寸。三维封装具有尺寸和体积小、组装效率更高、速度更快以及带宽加大等优点。
多芯片组件封装主要有三种类型:埋置型、有源基板型和叠层型。基于埋置型的多芯片组件封装不仅能使电子设备性能和功能提高,利于轻薄短小化,而且由于钎焊连接部位减少,可提高可靠性并有效降低封装成本。
图3示出了一种高密度互连芯片结构,该高密度互连芯片结构包括:芯片组件10和基板20。
芯片组件10包括互连的功能芯片11和连接芯片12。
功能芯片11连接至基板20的第一表面,在第一表面上设有凹槽21,凹槽21位于功能芯片11在基板20的投影区。凹槽21容纳填充胶40,填充胶40的粘度随着温度升高而增大,连接芯片12设置于该凹槽21内。
在本实施例中,芯片组件10包括上下设置的功能芯片11和连接芯片12,功能芯片11能够覆盖连接芯片12。功能芯片11与连接芯片12之间通过第二焊点32连接,例如功能芯片11与连接芯片12之间通过金凸块或柱形凸块连接。
在本实施例中,基板20包括第一表面和第二表面,第一表面和第二表面相背设置。第一表面靠近功能芯片11,第二表面远离功能芯片11。功能芯片11通过第一焊点31连接在基板20的第一表面上,例如基板20与功能芯片11之间通过金凸块或柱形凸块连接,功能芯片11覆盖基板20的局部。
自基板20的第一表面向第二表面凹陷形成凹槽21,凹槽21的长宽尺寸以刚好能够容纳连接芯片12为宜,凹槽21的深度与连接芯片12的厚度相等。在第二表面设置接触球22。
在相关技术中,由于加工精度的问题导致凹槽21的深度略大于连接芯片12的厚度,如图1所示。熔融的第一焊点31在连接功能芯片11与基板20的同时,将大量热量传递给芯片组件10,使得功能芯片11与连接芯片12之间的第二焊点32因高温而熔断或断连,如图2所示。
而本实施例在凹槽21设置填充胶40,该填充胶40的粘度随着温度升高而增大。填充胶40能够支持连接芯片12,使得连接芯片12与功能芯片11之间的间隙保持不变,呈熔融态的第二焊点32依旧能够与连接芯片12、功能芯片11相接触。当熔融的第一焊点31冷却至常温,功能芯片11与基板20相互连接,第二焊点32也冷却至常温,第二焊点32连接连接芯片12与功能芯片11,恢复初始态的正常连接。
在一些优选的实施例中,凹槽21的深度大于连接芯片12的厚度。
如图3所示,在本实施例中,在基板20的第一表面的中心位置上形成矩形的凹槽21,凹槽21的长度大于连接芯片12的长度,凹槽21的宽度大于连接芯片12的宽度,使得连接芯片12能够方便容纳于该凹槽21内。凹槽21的深度大于连接芯片12的厚度,填充胶40设置于凹槽21底部,且填充胶40均布铺设。连接芯片12设置于凹槽21内,填充胶40能够覆盖连接芯片12的下表面和四周的侧面。连接芯片12的上表面与基板20的第一表面平齐。
需要说明的是,在一些实施例中,连接芯片12的上表面可以低于基板20的第一表面,或者连接芯片12的上表面可以高于基板20的第一表面。
上述凹槽21结构,使得填充胶40能够均布铺设于凹槽21底部,填充胶40水平支撑连接芯片12,连接芯片12的每一个部分与功能芯片11之间的距离均为定值,从而有利于凝固后的第二焊点32连接连接芯片12与功能芯片11。此外,还可以降低凹槽21的加工精度,凹槽21的深度只要大于连接芯片12的厚度且小于基板20的厚度即可。
在一些优选的实施例中,在凹槽21外的四周布置若干个第一焊点31。呈矩形布置的第一焊点31环绕凹槽21,各第一焊点31之间等距离设置,使得功能芯片11与基板20之间能够形成均匀的作用力,保证芯片组件10与基板20之间稳定、可靠的连接。
在一些优选的实施例中,在连接芯片12靠近功能芯片11的表面设置若干个第二焊点32。第二焊点32呈阵列布置,有利于功能芯片11与连接芯片12之间形成均匀的作用力,保证功能芯片11与连接芯片12之间稳定连接。在一些实施例中,在功能芯片11覆盖连接芯片12区域上也可以设置若干个第二焊点32。
在一些优选的实施例中,第一焊点31的熔融温度高于填充胶40的凝固温度。
在本实施例中,功能芯片11与基板20之间连接通过第一焊点31连接,第一焊点31的熔融温度为200°~250°;连接芯片12与功能芯片11之间通过第二焊点32连接,第二焊点32的熔融温度为200°~250°,第一焊点31的熔融温度与第二焊点32的熔融温度相等。填充胶40的凝固温度低于200°。
当第一焊点31的温度升至200°,第一焊点31呈未完全熔融态。此时,第一焊点31产生的热量传递至芯片组件10,使得功能芯片11与连接芯片12之间的第二焊点32呈未完全熔融态,第二焊点32依旧连接着功能芯片11与连接芯片12。与此同时,填充胶40的粘度增至最大,填充胶40使得互连芯片12的上表面与功能芯片11的下表面之间的距离等于初始态的互连芯片12的上表面与功能芯片11的下表面之间的距离。需要说明的是,此处“初始态”指芯片组件10与基板20未组装时。
当第一焊点31的温度至熔融温度,即超过200°,第一焊点31呈完全熔融态。此时,第一焊点31产生的热量传递至芯片组件10,使得功能芯片11与连接芯片12之间的第二焊点32呈完全熔融态。与此同时,填充胶40的粘度保持最大值,填充胶40使得互连芯片12的上表面与功能芯片11的下表面之间的距离保持不变。
本实施例的第一焊点31的熔融温度与第二焊点32的熔融温度相等,且均高于填充胶40的凝固温度,使得第二焊点32未完全熔融时,填充胶40已经使得互连芯片12的上表面与功能芯片11的下表面之间距离保持不变,从而保证冷却后的第二焊点32能够稳定、可靠的连接功能芯片11与连接芯片12。
需要说明的是,在一些实施例中,第一焊点31的熔融温度低于第二焊点32的熔融温度,其带来的效果同上述第一焊点31的熔融温度等于第二焊点32的熔融温度所产生的效果。
在一些优选的实施例中,基板20是印制电路板,由陶瓷或层压板制成的多层布线板。
上各实施例仅说明申请的技术方案而非对其限制,尽管参照各实施例对本申请进行详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。
Claims (9)
1.一种高密度互连芯片结构,其特征在于,包括:
芯片组件,所述芯片组件包括互连的功能芯片和连接芯片;及
基板,所述功能芯片连接至所述基板的第一表面,所述第一表面设有凹槽,所述凹槽位于所述功能芯片在所述基板的投影区,所述凹槽容纳填充胶,所述填充胶的粘度随着温度升高而增大,所述连接芯片设置于所述凹槽内。
2.根据权利要求1所述的高密度互连芯片结构,其特征在于,所述凹槽的深度大于所述连接芯片的厚度。
3.根据权利要求1所述的高密度互连芯片结构,其特征在于,还包括第一焊点,所述第一焊点用于连接所述功能芯片与所述基板,所述第一焊点设置于所述凹槽外的四周。
4.根据权利要求3所述的高密度互连芯片结构,其特征在于,所述第一焊点的熔融温度高于所述填充胶的凝固温度。
5.根据权利要求3所述的高密度互连芯片结构,其特征在于,所述第一焊点呈阵列布置。
6.根据权利要求1所述的高密度互连芯片结构,其特征在于,还包括第二焊点,所述第二焊带用于连接所述功能芯片与所述连接芯片,所述第二焊点设置于所述功能芯片或所述连接芯片。
7.根据权利要求6所述的高密度互连芯片结构,其特征在于,所述第二焊点的熔融温度高于所述填充胶的凝固温度。
8.根据权利要求6所述的高密度互连芯片结构,其特征在于,所述第二焊点呈阵列布置。
9.根据权利要求1~8中任一项所述的高密度互连芯片结构,其特征在于,所述基板是印制电路板,由陶瓷或层压板制成的多层布线板。
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