CN112174655A - 一种抗变形性能强的铁氧体磁瓦及其制作工艺 - Google Patents
一种抗变形性能强的铁氧体磁瓦及其制作工艺 Download PDFInfo
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- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000000654 additive Substances 0.000 claims abstract description 30
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 30
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims abstract description 30
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 15
- 239000011733 molybdenum Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims abstract description 14
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001868 water Inorganic materials 0.000 claims abstract description 14
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims abstract description 12
- 239000002667 nucleating agent Substances 0.000 claims abstract description 10
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004327 boric acid Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 229910000019 calcium carbonate Inorganic materials 0.000 claims abstract description 6
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000003756 stirring Methods 0.000 claims description 44
- 238000002156 mixing Methods 0.000 claims description 18
- 238000010304 firing Methods 0.000 claims description 9
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 5
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 4
- 238000009775 high-speed stirring Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000010791 quenching Methods 0.000 claims description 4
- 230000000171 quenching effect Effects 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 4
- 239000012752 auxiliary agent Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 9
- 238000009472 formulation Methods 0.000 claims 8
- 230000000996 additive effect Effects 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种抗变形性能强的铁氧体磁瓦及其制作工艺，配方材料包括：氧化锶、氧化钡、氧化铁、水以及添加剂，所述添加剂包括碳酸钙、三氧化二铝、三氧化二铬、硼酸、二氧化硅、四氧化三钴、三氧化二镧、钼和成核剂。本发明所述的一种抗变形性能强的铁氧体磁瓦及其制作工艺，通过在添加剂中选用的钼，可提高铁氧体磁瓦的可硬化性并增加其韧性，同时在铁氧体磁瓦成品后钼不被氧化，作为有效的硬化剂，钼不会导致表面产生裂纹和剥落，与此同时，在添加剂中选用的成核剂，用于增加铁氧体磁瓦的耐热性，减小大分子链接距离，增大其硬度，通过此上添加的两种添加剂，在铁氧体磁瓦制作完成后，可以确保其本身的硬度和耐热性，增强其抗变形性能。
Description
技术领域
本发明涉及铁氧体磁瓦领域，特别涉及一种抗变形性能强的铁氧体磁瓦及其制作工艺。
背景技术
铁氧体磁瓦的磁性能表现在高频时具有较高的磁导率。因而，铁氧体己成为高频弱电领域用途广泛的非金属磁性材料。由于铁氧体单位体积中储存的磁能较低，饱合磁化强度也较低（通常只有纯铁的1/3-1/5），因而限制了它在要求较高磁能密度的代频强电和大功率领域的应用。现有的铁氧体磁瓦在通过制作工艺制作出来后，因为本身比较脆且硬度不强，所以在出现磕碰的情况下容易产生破碎变形，同时，因为其自身也不具备较强的抗热性，所以在处于高温的状态下，容易产生形变，而形变容易导致本省磁性的衰弱。
发明内容
本发明的主要目的在于提供一种抗变形性能强的铁氧体磁瓦及其制作工艺，可以有效解决背景技术中提出的问题。
为实现上述目的，本发明采取的技术方案为：
一种抗变形性能强的铁氧体磁瓦配方，配方材料包括：氧化锶、氧化钡、氧化铁、水以及添加剂，所述添加剂包括碳酸钙、三氧化二铝、三氧化二铬、硼酸、二氧化硅、四氧化三钴、三氧化二镧、钼和成核剂。
优选的，所述氧化锶的质量配比为60%，所述氧化钡的质量配比为10%，所述氧化铁的质量配比为20.5%。
优选的，所述碳酸钙的质量配比为0.5%，所述三氧化铝的质量配比为1.5%，所述三氧化二铬的质量配比为1.5%，所述硼酸的质量配比为0.5%，所述二氧化硅的质量配比为1.6%，所述四氧化三钴的质量配比为1.4%，所述三氧化二镧的质量配比为1.5%，所述钼的质量配比为0.15%，所述成核剂的质量配比为0.85%。
优选的，所述氧化锶、氧化钡和氧化铁均为等量配置。
优选的，所述添加剂中的各类添加剂均为等量配置。
一种抗变形性能强的铁氧体磁瓦的制备工艺，包括以下流程：
S1、材料与设备准备，根据铁氧体磁瓦的用量，事先预估并准备好足够的配方中的原材料，同时准备好大小合适的搅拌设备；
S2、用量计算与设备试机，根据铁氧体磁瓦的需求量以及配比计算出各种材料的需求量，同时将搅拌设备接通电源并试机；
S3、基材混合，将配方中的氧化锶、氧化钡、氧化铁和水依次倒入搅拌设备中，开启搅拌设备并进行低速搅拌混合，使各种材料混合均匀；
S4、助剂混合，安装配方比称取定量的添加剂，并将这些添加机加入S3中搅拌混合形成的拌混合水中。
S5、混合搅拌，通过S2调节搅拌装置，使搅拌装置实现高速搅拌，将S3中的配料与S4中的添加剂进行充分的混合形成预烧料。
S6、材料预烧，将S5中的得到的预烧料放入炉内，并让其在1500℃到1800℃的温度下进行烧制。
S7、压制成型，将S6中烧制后的料浆注入模具中，在20Mpa的压力下形成生胚， 用6～8万安匝直流磁场充磁， 同时叠加9～10万安匝的脉冲磁场， 取向度≥97％；
S8、烧结，将生坯放入炉内在1200-1300℃温度下烧结，保温1h～2h；
S9、热处理，在S8中的生胚保温后，温度下降到800℃之前采用急淬冷的方式出炉；
优选的，所述S3步骤中的搅拌时间为10分钟，所述S5步骤中的搅拌时间为20分钟。
优选的，所述S6步骤中烧制的时间为5小时，所述S8步骤中的烧制时间为2小时。
与现有技术相比，本发明具有如下有益效果：
通过在添加剂中选用的钼，可提高铁氧体磁瓦的可硬化性并增加其韧性，同时在铁氧体磁瓦成品后钼不被氧化，作为有效的硬化剂，钼不会导致表面产生裂纹和剥落，与此同时，在添加剂中选用的成核剂，用于增加铁氧体磁瓦的耐热性，减小大分子链接距离，增大其硬度，通过此上添加的两种添加剂，在铁氧体磁瓦制作完成后，可以确保其本身的硬度和耐热性，增强其抗变形性能。
附图说明
图1为本发明一种抗变形性能强的铁氧体磁瓦及其制作工艺的制备流程图。
具体实施方式
为使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体实施方式，进一步阐述本发明。
一种抗变形性能强的铁氧体磁瓦配方，配方材料包括：氧化锶、氧化钡、氧化铁、水以及添加剂，添加剂包括碳酸钙、三氧化二铝、三氧化二铬、硼酸、二氧化硅、四氧化三钴、三氧化二镧、钼和成核剂。
氧化锶的质量配比为60%，氧化钡的质量配比为10%，氧化铁的质量配比为20.5%。
三氧化二铬的质量配比为1.5%，硼酸的质量配比为0.5%，二氧化硅的质量配比为1.6%，四氧化三钴的质量配比为1.4%，三氧化二镧的质量配比为1.5%，钼的质量配比为0.15%，成核剂的质量配比为0.85%。
氧化锶、氧化钡和氧化铁均为等量配置。
添加剂中的各类添加剂均为等量配置。
如图1所示，一种抗变形性能强的铁氧体磁瓦的制备工艺，包括以下流程：
S1、材料与设备准备，根据铁氧体磁瓦的用量，事先预估并准备好足够的配方中的原材料，同时准备好大小合适的搅拌设备；
S2、用量计算与设备试机，根据铁氧体磁瓦的需求量以及配比计算出各种材料的需求量，同时将搅拌设备接通电源并试机；
S3、基材混合，将配方中的氧化锶、氧化钡、氧化铁和水依次倒入搅拌设备中，开启搅拌设备并进行低速搅拌混合，使各种材料混合均匀；
S4、助剂混合，安装配方比称取定量的添加剂，并将这些添加机加入S3中搅拌混合形成的拌混合水中。
S5、混合搅拌，通过S2调节搅拌装置，使搅拌装置实现高速搅拌，将S3中的配料与S4中的添加剂进行充分的混合形成预烧料。
S6、材料预烧，将S5中的得到的预烧料放入炉内，并让其在1500℃到1800℃的温度下进行烧制。
S7、压制成型，将S6中烧制后的料浆注入模具中，在20Mpa的压力下形成生胚， 用6～8万安匝直流磁场充磁， 同时叠加9～10万安匝的脉冲磁场， 取向度≥97％；
S8、烧结，将生坯放入炉内在1200-1300℃温度下烧结，保温1h～2h；
S9、热处理，在S8中的生胚保温后，温度下降到800℃之前采用急淬冷的方式出炉；
S3步骤中的搅拌时间为10分钟，S5步骤中的搅拌时间为20分钟。
S6步骤中烧制的时间为5小时，S8步骤中的烧制时间为2小时。
需要说明的是，本发明为一种抗变形性能强的铁氧体磁瓦及其制作工艺，在制备抗变形性强的铁氧体磁瓦时，首先准备好氧化锶、氧化钡、氧化铁和水等基材与相应的添加剂，同时准备好大小合适的搅拌设备，并将搅拌设备的电源接通，往搅拌设备中添加一定量清水，随后启动搅拌设备进行自清洗，在搅拌设备晾干后，根据铁氧体磁瓦的需求量以及配比计算出各种材料的需求量，并将称取好的配方中的氧化锶、氧化钡、氧化铁和水依次倒入搅拌设备中，开启搅拌设备并进行低速搅拌混合，在搅拌10分钟后，根据配方比称取定量的添加剂，并将这些添加机加入搅拌混合形成的拌混合水中，并调节搅拌设备实现高速搅拌20分钟，在搅拌的过程中，添加剂中的钼和成核剂会与其他的材料和添加剂进行充分的混合，在搅拌操作结束后将搅拌形成的预烧料放入到炉中，并让其在1500℃到1800℃的温度下烧制5个小时，之后再将烧制过后的料浆注入模具中，在20Mpa的压力下形成生胚， 用6～8万安匝直流磁场充磁， 同时叠加9～10万安匝的脉冲磁场， 取向度≥97％，在料浆注入模具成型后，将生坯放入炉内在1200-1300℃温度下烧结2个小时，时间控制在2h～3h，保温1h～2h，然后在生坯的温度降到800℃之前采用急淬冷的方式出炉，便的到成品的铁氧体磁瓦，而铁氧体磁瓦内部的钼和成核剂使得其本身具有高硬度性、高韧性和耐热性，使之产生较高的抗变形性能。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (10)
1.一种抗变形性能强的铁氧体磁瓦配方，其特征在于，配方材料包括：氧化锶、氧化钡、氧化铁、水以及添加剂，所述添加剂包括碳酸钙、三氧化二铝、三氧化二铬、硼酸、二氧化硅、四氧化三钴、三氧化二镧、钼和成核剂。
2.根据权利要求1所述的一种抗变形性能强的铁氧体磁瓦配方，其特征在于：所述氧化锶的质量配比为60%，所述氧化钡的质量配比为10%，所述氧化铁的质量配比为20.5%。
3.根据权利要求1所述的一种抗变形性能强的铁氧体磁瓦配方，其特征在于：所述碳酸钙的质量配比为0.5%，所述三氧化铝的质量配比为1.5%，所述三氧化二铬的质量配比为1.5%，所述硼酸的质量配比为0.5%，所述二氧化硅的质量配比为1.6%，所述四氧化三钴的质量配比为1.4%，所述三氧化二镧的质量配比为1.5%，所述钼的质量配比为0.15%，所述成核剂的质量配比为0.85%。
4.根据权利要求1所述的一种抗变形性能强的铁氧体磁瓦配方，其特征在于：所述氧化锶、氧化钡和氧化铁均为等量配置。
5.根据权利要求1所述的一种抗变形性能强的铁氧体磁瓦配方，其特征在于：所述添加剂中的各类添加剂均为等量配置。
6.一种抗变形性能强的铁氧体磁瓦的制备工艺，其特征在于：包括以下流程：
S1、材料与设备准备，根据铁氧体磁瓦的用量，事先预估并准备好足够的配方中的原材料，同时准备好大小合适的搅拌设备；
S2、用量计算与设备试机，根据铁氧体磁瓦的需求量以及配比计算出各种材料的需求量，同时将搅拌设备接通电源并试机；
S3、基材混合，将配方中的氧化锶、氧化钡、氧化铁和水依次倒入搅拌设备中，开启搅拌设备并进行低速搅拌混合，使各种材料混合均匀；
S4、助剂混合，安装配方比称取定量的添加剂，并将这些添加机加入S3中搅拌混合形成的拌混合水中。
7.S5、混合搅拌，通过S2调节搅拌装置，使搅拌装置实现高速搅拌，将S3中的配料与S4中的添加剂进行充分的混合形成预烧料。
8.S6、材料预烧，将S5中的得到的预烧料放入炉内，并让其在1500℃到1800℃的温度下进行烧制。
9.S7、压制成型，将S6中烧制后的料浆注入模具中，在20Mpa的压力下形成生胚， 用6～8万安匝直流磁场充磁， 同时叠加9～10万安匝的脉冲磁场， 取向度≥97％；
S8、烧结，将生坯放入炉内在1200-1300℃温度下烧结，保温1h～2h；
S9、热处理，在S8中的生胚保温后，温度下降到800℃之前采用急淬冷的方式出炉；
根据权利要求6所述的一种抗变形性能强的铁氧体磁瓦的制备工艺，其特征在于：所述S3步骤中的搅拌时间为10分钟，所述S5步骤中的搅拌时间为20分钟。
10.根据权利要求6所述的一种抗变形性能强的铁氧体磁瓦的制备工艺，其特征在于：所述S6步骤中烧制的时间为5小时，所述S8步骤中的烧制时间为2小时。
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