CN112154369A - 显示基板及其制作方法、显示面板、显示装置 - Google Patents
显示基板及其制作方法、显示面板、显示装置 Download PDFInfo
- Publication number
- CN112154369A CN112154369A CN201980000555.7A CN201980000555A CN112154369A CN 112154369 A CN112154369 A CN 112154369A CN 201980000555 A CN201980000555 A CN 201980000555A CN 112154369 A CN112154369 A CN 112154369A
- Authority
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- China
- Prior art keywords
- transparent conductive
- conductive pattern
- pixel electrode
- substrate
- display substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 title claims abstract description 198
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 239000004973 liquid crystal related substance Substances 0.000 claims description 47
- 239000010409 thin film Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 16
- 239000010410 layer Substances 0.000 description 89
- 229920002120 photoresistant polymer Polymers 0.000 description 60
- 238000003860 storage Methods 0.000 description 35
- 239000003990 capacitor Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 239000002184 metal Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 230000005684 electric field Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000012780 transparent material Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- -1 and the like Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本公开提供了一种显示基板及其制作方法、显示面板、显示装置，属于显示技术领域。其中，显示基板，包括衬底基板、信号线和像素电极，所述信号线和像素电极异层设置在所述衬底基板上；所述显示基板还包括：位于所述像素电极与所述信号线之间的第一透明导电图形，所述第一透明导电图形的一部分位于所述像素电极的正下方，所述第一透明导电图形与所述信号线之间间隔有第一钝化层，所述第一透明导电图形与所述像素电极之间间隔有第二钝化层，所述第一透明导电图形与所述显示基板的公共电极线电连接。本公开的技术方案能够提高显示装置的开口率。
Description
PCT国内申请，说明书已公开。
Claims (13)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/085007 WO2020220201A1 (zh) | 2019-04-29 | 2019-04-29 | 显示基板及其制作方法、显示面板、显示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112154369A true CN112154369A (zh) | 2020-12-29 |
| CN112154369B CN112154369B (zh) | 2024-04-05 |
Family
ID=73029318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980000555.7A Active CN112154369B (zh) | 2019-04-29 | 2019-04-29 | 显示基板及其制作方法、显示面板、显示装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11221532B2 (zh) |
| CN (1) | CN112154369B (zh) |
| WO (1) | WO2020220201A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116897429A (zh) * | 2021-06-24 | 2023-10-17 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971388A (zh) * | 2006-12-11 | 2007-05-30 | 友达光电股份有限公司 | 像素结构及其制作方法 |
| CN101430463A (zh) * | 2007-11-09 | 2009-05-13 | 上海广电Nec液晶显示器有限公司 | 液晶显示装置及其制作方法 |
| CN101577248A (zh) * | 2009-06-12 | 2009-11-11 | 友达光电股份有限公司 | 阵列基板及其形成方法 |
| CN102645803A (zh) * | 2011-10-17 | 2012-08-22 | 京东方科技集团股份有限公司 | 像素单元，阵列基板、液晶面板、显示装置及其制造方法 |
| US20130314636A1 (en) * | 2011-11-25 | 2013-11-28 | Shanghai Tianma Micro-electronics Co., Ltd. | Tft array substrate and forming method thereof, and display panel |
| CN103676373A (zh) * | 2013-11-27 | 2014-03-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
| CN104698706A (zh) * | 2015-03-31 | 2015-06-10 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制造方法、显示装置 |
| US20160291417A1 (en) * | 2013-08-30 | 2016-10-06 | Boe Technology Group Co., Ltd. | Array substrate, display device and method for manufacturing array substrate |
| CN106898577A (zh) * | 2017-03-23 | 2017-06-27 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6433841B1 (en) | 1997-12-19 | 2002-08-13 | Seiko Epson Corporation | Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same |
| US20080049176A1 (en) * | 2006-08-25 | 2008-02-28 | Samsung Electronics Co., Ltd. | Thin film transistor-array substrate, transflective liquid crystal display device with the same, and method for manufacturing the same |
| CN101251696B (zh) * | 2008-04-08 | 2011-01-26 | 友达光电股份有限公司 | 主动元件阵列基板及液晶显示面板 |
| KR101566430B1 (ko) * | 2009-03-31 | 2015-11-06 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| CN103293797B (zh) | 2012-06-08 | 2016-06-29 | 上海中航光电子有限公司 | 一种薄膜晶体管液晶显示装置及其制作方法 |
| CN103852941A (zh) | 2012-12-07 | 2014-06-11 | 瀚宇彩晶股份有限公司 | 主动元件阵列基板与显示面板 |
-
2019
- 2019-04-29 WO PCT/CN2019/085007 patent/WO2020220201A1/zh active Application Filing
- 2019-04-29 CN CN201980000555.7A patent/CN112154369B/zh active Active
- 2019-04-29 US US16/758,801 patent/US11221532B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1971388A (zh) * | 2006-12-11 | 2007-05-30 | 友达光电股份有限公司 | 像素结构及其制作方法 |
| CN101430463A (zh) * | 2007-11-09 | 2009-05-13 | 上海广电Nec液晶显示器有限公司 | 液晶显示装置及其制作方法 |
| CN101577248A (zh) * | 2009-06-12 | 2009-11-11 | 友达光电股份有限公司 | 阵列基板及其形成方法 |
| CN102645803A (zh) * | 2011-10-17 | 2012-08-22 | 京东方科技集团股份有限公司 | 像素单元，阵列基板、液晶面板、显示装置及其制造方法 |
| US20130314636A1 (en) * | 2011-11-25 | 2013-11-28 | Shanghai Tianma Micro-electronics Co., Ltd. | Tft array substrate and forming method thereof, and display panel |
| US20160291417A1 (en) * | 2013-08-30 | 2016-10-06 | Boe Technology Group Co., Ltd. | Array substrate, display device and method for manufacturing array substrate |
| CN103676373A (zh) * | 2013-11-27 | 2014-03-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
| CN104698706A (zh) * | 2015-03-31 | 2015-06-10 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制造方法、显示装置 |
| CN106898577A (zh) * | 2017-03-23 | 2017-06-27 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US11221532B2 (en) | 2022-01-11 |
| WO2020220201A1 (zh) | 2020-11-05 |
| US20210240044A1 (en) | 2021-08-05 |
| CN112154369B (zh) | 2024-04-05 |
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