CN112103368A - 一种用于多晶硅薄膜的激光掺杂方法 - Google Patents
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Abstract
本发明公开了一种用于多晶硅薄膜的激光掺杂方法，包括以下步骤：在硅片衬底的表面生长一层氧化硅层；在氧化硅层上沉积多晶硅薄膜，所述多晶硅薄膜为原位掺杂的多晶硅薄膜或本征多晶硅薄膜，若为本征多晶硅薄膜时，在本征多晶硅薄膜上引入掺杂源；采用激光辐照多晶硅薄膜。对于原位掺杂的多晶硅薄膜，采用激光辐照多晶硅薄膜，以激活掺杂原子。若对于需外部引入掺杂源的多晶硅薄膜，采用激光辐照，将掺杂剂推入多晶硅薄膜以实现掺杂。本发明可以实现多晶硅薄膜掺杂的低温化，本发明可以实现多晶硅薄膜的局域掺杂。
Description
技术领域
本发明属于光伏技术领域，具体涉及一种用于多晶硅薄膜的激光掺杂方法。
背景技术
光伏发电作为一种重要的新型可再生绿色能源，被世界各国广泛研究和利用；在众多太阳能电池中，硅基太阳能电池具有原料丰富、无毒害的优势，成为现今太阳能电池市场的主体，尤其是多晶硅电池，效率高、生产工艺和生产成本相对简单合理。
多晶硅是单质硅的一种形态。将非晶硅熔融之后并在过冷条件下凝固可以形成多晶硅。目前，多晶硅被广泛应用于形成多晶硅薄膜。目前，存在大量关于多晶硅薄膜制备方面的研究，但是目前多晶硅薄膜掺杂需要高温进行，需要消耗较多能耗。
发明内容
为了解决上述问题，本发明提供了一种用于多晶硅薄膜的激光掺杂方法，解决多晶硅薄膜掺杂的局域化、低温化。
本发明的技术方案为：一种用于多晶硅薄膜的激光掺杂方法，包括以下步骤：
(1)在硅片衬底的表面生长一层氧化硅层；
(2)在氧化硅层上沉积多晶硅薄膜，所述多晶硅薄膜为原位掺杂的多晶硅薄膜或本征多晶硅薄膜，若为本征多晶硅薄膜时，在本征多晶硅薄膜上引入掺杂源；
(3)采用激光辐照多晶硅薄膜。
本发明中将硅片经过清洗后，在其表面生长一层薄氧化硅层，然后在薄氧化层上沉积多晶硅薄膜，该多晶硅薄膜可以为原位掺硼或掺磷的薄膜，也可以为本征多晶硅薄膜。
如果多晶硅薄膜为本征多晶硅薄膜，则后续需要从外部引入掺杂源，引入掺杂源的方式有多种，采用现有多种方式均可，作为优选，在氧化硅层上沉积本征多晶硅薄膜之后，采用APCVD沉积掺杂源、旋涂掺杂源或管式扩散炉沉积掺杂源，最后采用激光辐照，将掺杂剂推入本征多晶硅薄膜以实现掺杂。
对于原位掺杂的多晶硅薄膜，采用激光辐照多晶硅薄膜，以激活掺杂原子。若对于需外部引入掺杂源的多晶硅薄膜，采用激光辐照，将掺杂剂推入多晶硅薄膜以实现掺杂。
本发明中在硅片衬底表面上生长一层氧化硅层的方法有多种，采用现有多种常规方法均可，作为优选，所述步骤(1)中将硅片衬底置于管式氧化炉内生长一层氧化硅层。
作为优选，所述氧化硅层的厚度为1～5nm。
作为优选，所述步骤(2)中在氧化硅层上采用低压化学气相沉积方法沉积。
作为优选，所述多晶硅薄膜的厚度为5～1000nm。
作为优选，激光辐照时，激光光斑为圆形、方形或线形。
作为优选，所述激光辐照时，激光的波长为325nm、532nm或1064nm。
本发明中所选用的激光可以装配整形镜，以实现光斑形貌和能量分布的控制，使得本发明中多晶硅薄膜经激光辐照后，掺杂可均匀分布于多晶硅薄膜内，或从多晶硅薄膜表面到内部呈一定的浓度梯度分布。本发明中多晶硅薄膜经激光辐照后，掺杂的分布也可仅局限于多晶硅薄膜内部，亦可渗透多晶硅薄膜和二氧化硅层，到达衬底单晶硅表面和内部。
作为优选，掺杂时，采用的掺杂剂为PH3或B2H6。
与现有技术相比，本发明的有益效果体现在：
(1)本发明可以实现多晶硅薄膜掺杂的低温化，降低能耗；
(2)本发明可以实现多晶硅薄膜的局域掺杂。
具体实施方式
实施例1
(1)本实施例采用N型单晶硅衬底，经过抛光、RCA清洗后，在管式氧化炉内生长一层薄二氧化硅层，厚度为1.4nm。
(2)在薄二氧化硅层上用低压化学气相沉积方式沉积掺杂多晶硅薄膜，多晶硅薄膜为原位掺杂的多晶硅薄膜，其厚度为50nm，掺杂剂为PH3。
(3)采用激光辐照多晶硅薄膜，将掺杂原子激活，使得多晶硅薄膜具有一定的方阻，增强其导电性。
实施例2
(1)本实施例采用N型单晶硅衬底，经过抛光、制绒、RCA清洗后，在管式氧化炉内生长一层薄二氧化硅层，厚度为1.4nm。
(2)在薄二氧化硅层上用低压化学气相沉积方式沉积掺杂多晶硅薄膜，多晶硅薄膜为本征多晶硅薄膜，厚度为10nm，在氧化硅层上沉积本征多晶硅薄膜之后，采用APCVD沉积掺杂源、旋涂掺杂源或管式扩散炉沉积掺杂源，掺杂剂为B2H6。
(3)采用激光辐照多晶硅薄膜，将掺杂源推入硅衬底内。
Claims (10)
1.一种用于多晶硅薄膜的激光掺杂方法，其特征在于，包括以下步骤：
(1)在硅片衬底的表面生长一层氧化硅层；
(2)在氧化硅层上沉积多晶硅薄膜，所述多晶硅薄膜为原位掺杂的多晶硅薄膜或本征多晶硅薄膜，若为本征多晶硅薄膜时，在本征多晶硅薄膜上引入掺杂源；
(3)采用激光辐照多晶硅薄膜。
2.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，所述步骤(1)中将硅片衬底置于管式氧化炉内生长一层氧化硅层。
3.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，所述氧化硅层的厚度为1～5nm。
4.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，所述步骤(2)中在氧化硅层上采用低压化学气相沉积方法沉积。
5.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，所述多晶硅薄膜的厚度为5～1000nm。
6.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，在氧化硅层上沉积原位掺杂的多晶硅薄膜之后，采用激光辐照多晶硅薄膜，激活掺杂原子。
7.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，在氧化硅层上沉积本征多晶硅薄膜之后，采用APCVD沉积掺杂源、旋涂掺杂源或管式扩散炉沉积掺杂源，最后采用激光辐照，将掺杂剂推入本征多晶硅薄膜以实现掺杂。
8.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，激光辐照时，激光光斑为圆形、方形或线形。
9.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，所述激光辐照时，激光的波长为325nm、532nm或1064nm。
10.如权利要求1所述的用于多晶硅薄膜的激光掺杂方法，其特征在于，掺杂时，采用的掺杂剂为PH3或B2H6。
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| CN109346549A (zh) * | 2018-10-23 | 2019-02-15 | 上海神舟新能源发展有限公司 | N型双面太阳电池及其制备方法 |
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| CN101174558A (zh) * | 2007-12-04 | 2008-05-07 | 北京工业大学 | 立方氮化硼薄膜的p型掺杂方法 |
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| CN109346549A (zh) * | 2018-10-23 | 2019-02-15 | 上海神舟新能源发展有限公司 | N型双面太阳电池及其制备方法 |
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| CN112701192A (zh) * | 2021-01-29 | 2021-04-23 | 泰州中来光电科技有限公司 | 一种太阳电池的选择性掺杂结构的制备方法 |
| CN112701192B (zh) * | 2021-01-29 | 2023-09-05 | 泰州中来光电科技有限公司 | 一种太阳电池的选择性掺杂结构的制备方法 |
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Application publication date: 20201218 |