CN112092223A - Quartz tuning fork wafer production process - Google Patents
Quartz tuning fork wafer production process Download PDFInfo
- Publication number
- CN112092223A CN112092223A CN202010944936.5A CN202010944936A CN112092223A CN 112092223 A CN112092223 A CN 112092223A CN 202010944936 A CN202010944936 A CN 202010944936A CN 112092223 A CN112092223 A CN 112092223A
- Authority
- CN
- China
- Prior art keywords
- grinding
- crystal
- tuning fork
- wafer
- mound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000010453 quartz Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 58
- 239000013078 crystal Substances 0.000 claims abstract description 57
- 238000005520 cutting process Methods 0.000 claims abstract description 47
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 33
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 33
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 33
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 33
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 33
- 239000004575 stone Substances 0.000 claims abstract description 32
- 239000003292 glue Substances 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 48
- 239000012530 fluid Substances 0.000 claims description 18
- 229910000831 Steel Inorganic materials 0.000 claims description 12
- 239000010959 steel Substances 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 238000009966 trimming Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 3
- 239000010643 fennel seed oil Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 229920000297 Rayon Polymers 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000012797 qualification Methods 0.000 abstract description 2
- 239000004568 cement Substances 0.000 abstract 2
- 241001071917 Lithospermum Species 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 8
- 235000011511 Diospyros Nutrition 0.000 description 5
- 244000236655 Diospyros kaki Species 0.000 description 5
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
- H03H9/215—Crystal tuning forks consisting of quartz
Abstract
The invention discloses a quartz tuning fork wafer production process, and aims to provide a quartz tuning fork wafer production process which improves production efficiency, improves product qualification rate and reduces labor cost. The method comprises the steps of selecting SiO2 crude stone blocks → measuring angles → two sides of SiO2 crude stone growth dune and grind flat → seed crystal centering (SiO2 crude stone seeds are centered in the middle of Y blocks) → numerical control cutting → dressing size of resin grinding wheel → diagonal cement → linear cutting → grinding of large square piece of wafer thickness two → cleaning after grinding → high temperature cement of wafer → linear cutting mound → grinding and dressing of tuning fork-shaped crystal mound size → glue melting → cleaning of small quartz tuning fork wafer → packaging. The invention is applied to the technical field of quartz crystal processing.
Description
Technical Field
The invention relates to a quartz wafer production process, in particular to a quartz tuning fork wafer production process.
Background
The quartz tuning fork wafer is applied to the surface crystal, has wide application range, has higher requirements on raw material selection, process design, equipment precision and process control capability of the quartz wafer, is different from the design of other products, but has the defects of more complicated production process and production flow, old equipment, low production benefit and low production benefit, and only can be used for making products with lower requirements.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a quartz tuning fork wafer production process which improves the production efficiency, improves the product qualification rate and reduces the labor cost.
The technical scheme adopted by the invention is as follows: the invention comprises the following steps:
a. selecting SiO2 raw stones with the size of 187 by 75 by 52, measuring the Z-surface angle of the SiO2 raw stones through an infrared X-ray machine, and carrying out grading identification on the SiO2 raw stones with different angles;
b. grinding a first surface of a growing hill of the SiO2 raw stone to a surface non-growing surface by a surface grinder, turning over and grinding a second surface to a non-growing surface, controlling the thickness of the SiO2 raw stone to be 50 +/-0.5 mm, and measuring the Z surface angle of the SiO2 raw stone by an infrared X-ray machine, wherein the Z surface angle is 2 degrees 00 +/-3';
c. the X surface of the SiO2 raw stone is wiped by fennel oil under a desk lamp to see the seed crystal position, the seed crystal is in the middle of the SiO2 raw stone, and the allowable deviation value is less than or equal to 0.20 mm;
d. cutting off the SiO2 raw stone once along the Y direction by using a numerical control cutting machine, cutting off the SiO2 raw stone into a crystal bar, wherein the size width of the crystal bar after cutting off is 67mm, and trimming the size of the crystal bar to 65.1 +/-0.10 mm on a plane grinding machine by using a resin grinding wheel;
e. carrying out secondary cutting on the crystal bar along the X direction by using a numerical control cutting machine, wherein the size length of the cut crystal bar is 78mm, and trimming the size of the crystal bar to 76 +/-0.10 mm on a plane grinder by using a resin grinding wheel to obtain a cuboid crystal weight I;
f. the first crystal mounds are arranged in the direction, are fixed on a bottom plate of the multi-wire cutting machine by glue after being positioned by the angle gauge, and are cut into wafers by the multi-wire cutting machine, and the thickness and the mass of the wafers after being cut are 0.500 +/-0.005 mm;
g. carrying out double-side grinding on the wafer by GC #1000 grinding liquid, wherein the thickness of the ground wafer is 0.430 +/-0.005 mm; then carrying out double-sided grinding by GC #3000 grinding fluid, wherein the thickness of the ground wafer is 0.400 +/-0.003 mm;
h. fixing a plurality of ground wafers into a whole, baking the wafers on a 120-DEG C wafer sticking furnace for 120min through a wafer sticking glue, shaping the wafers by using a clamp, and fixing the wafers into a whole wafer II;
i. fixing the crystal weight two-purpose glue on a bottom plate of the multi-wire cutting machine, and cutting the crystal weight two into tuning fork-shaped crystal weights by the multi-wire cutting machine;
j. grinding the cut tuning fork-shaped crystal mound in a double-sided grinding machine by GC #3000 grinding fluid, wherein the thickness of the ground tuning fork-shaped crystal mound is 6.525 +/-0.05 mm;
k. and after grinding the size of the tuning fork-shaped crystal mound, boiling the tuning fork-shaped crystal mound for 120 +/-3 min at high temperature of 100 ℃ by using a degumming agent, completely dissolving the viscose mound glue, cleaning, and drying to form the quartz tuning fork wafer.
Further, the thickness of a gasket in the numerical control cutting machine in the step d is 68mm, and the thickness of a saw blade is 0.80 mm; and e, the thickness of the gasket in the numerical control cutting machine in the step e is 80mm, and the thickness of the saw blade is 0.80 mm.
Further, the resin grinding wheel in the step d and the step e is a GC200# resin grinding wheel.
Furthermore, the parameters of the multi-wire cutting machine in the step f are set to be steel wire phi 0.14mm, the roller slot pitch is 0.67mm, the steel wire feeding speed is 400m/min, and the feeding amount is 0.10 mm/min; and (e) setting parameters of the multi-wire cutting machine in the step i to be steel wire phi 0.14mm, setting the roller slot pitch to be n +0.30mm, setting n to be the final size of the quartz tuning fork wafer, setting the steel wire feeding speed to be 400m/min and setting the feeding amount to be 0.10 mm/min.
Further, the ratio of the GC #1000 grinding fluid is green silicon carbide GC # 1000: grinding agent: water 30%: 5%: 65 percent, wherein the grain diameter of the GC #1000 grinding fluid is 15 um; the GC #3000 grinding fluid comprises green silicon carbide GC # 3000: grinding agent: water-28%: 5%: 67 percent, the grain diameter of the GC #3000 grinding fluid is 5.5 um; .
Further, the number of the wafers in the step h is 62.
The invention has the beneficial effects that: because the invention is made by putting high-precision equipment, advanced detection instruments, unique production steps and different grinding fluids into coarse sand and fine sand, the invention forms a relatively stable production scale through a plurality of experimental argumentations, can completely ensure the stability of each product batch, effectively improves the production efficiency while ensuring the qualified rate, and enhances the product competitiveness.
Drawings
FIG. 1 is a process flow diagram of the present invention.
Detailed Description
As shown in fig. 1, in the present embodiment, the present invention includes the following steps:
a. selecting SiO2 raw stone 1 with the size of 187 by 75 by 52, measuring the Z-surface angle of the SiO2 raw stone 1 by an infrared X-ray machine, and performing grading identification on the SiO2 raw stone 1 with different angles;
b. grinding a first surface of a growing hill of the SiO2 raw stone 1 to a surface non-growing surface by a surface grinding machine, turning over and grinding a second surface to a non-growing surface, controlling the thickness of the SiO2 raw stone 1 to be 50 +/-0.5 mm, and measuring the Z-surface angle of the SiO2 raw stone 1 by an infrared X-ray machine, wherein the Z-surface angle is 2 degrees 00 +/-3';
c. the X surface of the SiO2 raw stone 1 is wiped by fennel oil under a desk lamp to see the seed crystal position, the seed crystal is positioned in the middle of the SiO2 raw stone 1, and the allowable deviation value is less than or equal to 0.20 mm;
d. cutting the SiO2 raw stone 1 once along the Y direction by using a numerical control cutting machine, wherein the thickness of a gasket in the numerical control cutting machine is 68mm, the thickness of a saw blade is 0.80mm, the SiO2 raw stone 1 is cut into crystal bars 2, the size and width of the crystal bars 2 after cutting are 67mm, and the size of the crystal bars 2 is trimmed to 65.1 +/-0.10 mm on a plane grinder by using a GC200# resin grinding wheel;
e. performing secondary cutting on the crystal bar 2 along the X direction by using a numerical control cutting machine, wherein the thickness of a gasket in the numerical control cutting machine is 80mm, the thickness of a saw blade is 0.80mm, the size length of the cut crystal bar 2 is 78mm, and the size is trimmed to 76 +/-0.10 mm by using a GC200# resin grinding wheel on a plane grinder to form a cuboid crystal weight I3;
f. the first crystal mounds 3 are arranged in the direction, the first crystal mounds are fixed on a bottom plate of a multi-wire cutting machine by glue after being positioned by an angle gauge, the parameters of the multi-wire cutting machine are set to be 0.14mm of steel wire phi, the groove pitch of a roller is 0.67mm, the feeding speed of the steel wire is 400m/min, the feeding amount is 0.10mm/min, the first crystal mounds 3 are cut into wafers 4 by the multi-wire cutting machine, and the thickness and the mass of the cut wafers 4 are 0.500 +/-0.005 mm;
g. the wafer 4 is double-side polished by GC #1000 polishing solution, the proportion of the GC #1000 polishing solution is green silicon carbide GC # 1000: grinding agent: water 30%: 5%: 65 percent, the grain diameter of the GC #1000 grinding fluid is 15um, and the thickness of the ground wafer 4 is 0.430 +/-0.005 mm; and then carrying out double-sided grinding by using GC #3000 grinding fluid, wherein the proportion of the GC #3000 grinding fluid is green silicon carbide GC # 3000: grinding agent: water-28%: 5%: 67 percent, the grain diameter of the GC #3000 grinding fluid is 5.5um, and the thickness of the grinded wafer 4 is 0.400 +/-0.003 mm;
h. fixing the grinded 62 wafers 4 into a whole with the length of 25mm, baking the whole for 120min on a high-temperature 120-DEG C lump adhering furnace through lump adhering glue, shaping the whole by using a clamp, and fixing the whole wafer lump II 5;
i. fixing the crystal mound II 5 on a bottom plate of a multi-wire cutting machine by using glue, setting parameters of the multi-wire cutting machine to be a steel wire phi of 0.14mm, setting a roller slot pitch to be n +0.30mm, setting n to be the final size of a quartz tuning fork wafer, setting the steel wire feeding speed to be 400m/min and the feeding amount to be 0.10mm/min, and cutting the crystal mound II 5 into a tuning fork-shaped crystal mound 6 by using the multi-wire cutting machine;
j. grinding the cut tuning fork-shaped crystal mound 6 in a double-sided grinding machine by GC #3000 grinding fluid, wherein the thickness of the ground tuning fork-shaped crystal mound 6 is 6.525 +/-0.05 mm;
k. after 6-dimensional grinding of the tuning fork-shaped crystal mound, boiling the tuning fork-shaped crystal mound for 120 +/-3 min at high temperature of 100 ℃ through a degumming agent, completely dissolving the sticky mound glue, cleaning, and then performing double-side polishing through a persimmon oxide polishing solution, wherein the persimmon oxide polishing solution is prepared from persimmon oxide powder: polishing agent: 15% of water: 5%: 80 percent; the particle size of the oxidized persimmon polishing solution is 0.8um, and finally the oxidized persimmon polishing solution is dried to form a quartz tuning fork wafer 7, wherein the final dimension n of the quartz tuning fork wafer 7 is 65.1x6.525 +/-0.05 mm, and the thickness of the quartz tuning fork wafer is 0.400 +/-0.005 mm. ,
the invention is applied to the technical field of quartz crystal processing.
While the embodiments of the present invention have been described in terms of practical embodiments, they are not to be construed as limiting the meaning of the present invention, and modifications of the embodiments and combinations with other embodiments will be apparent to those skilled in the art in light of the present description.
Claims (6)
1. A quartz tuning fork wafer production process is characterized by comprising the following steps:
a. selecting SiO2 raw stone (1) with the size of 187X 75X 52, measuring the Z-surface angle of the SiO2 raw stone (1) by an infrared X-ray machine, and grading and marking the SiO2 raw stone (1) with different angles;
b. grinding a first surface of a growing hill of the SiO2 raw stone (1) to a surface non-growing surface by a surface grinder, turning over and grinding a second surface to a surface non-growing surface, wherein the thickness of the SiO2 raw stone (1) is controlled to be 50 +/-0.5 mm, and measuring the Z-surface angle of the SiO2 raw stone (1) by an infrared X-ray machine, wherein the Z-surface angle is 2 DEG 00 +/-3';
c. the X surface of the SiO2 raw stone (1) is wiped by fennel oil under a desk lamp to see the seed crystal position, the seed crystal is positioned in the middle of the SiO2 raw stone (1), and the allowable deviation value is less than or equal to 0.20 mm;
d. cutting the SiO2 raw stone (1) once along the Y direction by using a numerical control cutting machine, cutting the SiO2 raw stone (1) into crystal bars (2), wherein the size width of the crystal bars (2) after cutting is 67mm, and trimming the size of the crystal bars (2) to 65.1 +/-0.10 mm on a plane grinder by using a resin grinding wheel;
e. carrying out secondary cutting on the crystal bar (2) along the X direction by using a numerical control cutting machine, wherein the size length of the cut crystal bar (2) is 78mm, and trimming the size of the cut crystal bar to 76 +/-0.10 mm on a plane grinder by using a resin grinding wheel to form a cuboid crystal lead I (3);
f. the crystal mounds I (3) are arranged in the direction, are fixed on a bottom plate of the multi-wire cutting machine by glue after being positioned by the angle gauge, and are cut into wafers (4) by the multi-wire cutting machine, wherein the thickness and the mass of the wafers (4) after being cut are 0.500 +/-0.005 mm;
g. carrying out double-side grinding on the wafer (4) by GC #1000 grinding liquid, wherein the thickness of the ground wafer (4) is 0.430 +/-0.005 mm; then carrying out double-sided grinding by GC #3000 grinding fluid, wherein the thickness of the ground wafer (4) is 0.400 +/-0.003 mm;
h. fixing a plurality of ground wafers (4) into a whole, baking for 120min on a sticky lump furnace with a high temperature of 120 ℃ through sticky lump glue, shaping by using a clamp, and fixing into a whole wafer lump II (5);
i. fixing the crystal mound II (5) on a bottom plate of the multi-wire cutting machine by using glue, and cutting the crystal mound II (5) into a tuning fork-shaped crystal mound (6) by using the multi-wire cutting machine;
j. grinding the cut tuning fork-shaped crystal mound (6) in a double-sided grinding machine by GC #3000 grinding fluid, wherein the thickness of the ground tuning fork-shaped crystal mound (6) is 6.525 +/-0.05 mm;
k. and grinding the tuning fork shaped crystal mound (6) in size, boiling the tuning fork shaped crystal mound at a high temperature of 100 ℃ for 120 +/-3 min by using a degumming agent, completely dissolving the viscose mound glue, cleaning, and drying to form the quartz tuning fork wafer (7).
2. A quartz tuning fork wafer production process is characterized in that: the thickness of the gasket in the numerical control cutting machine in the step d is 68mm, and the thickness of the saw blade is 0.80 mm; and e, the thickness of the gasket in the numerical control cutting machine in the step e is 80mm, and the thickness of the saw blade is 0.80 mm.
3. A process for the production of large quartz wafers (4) according to claim 1, characterized in that: the resin grinding wheel in the step d and the step e is a GC200# resin grinding wheel.
4. A process for the production of large quartz wafers (4) according to claim 1, characterized in that: the parameters of the multi-wire cutting machine in the step f are set to be steel wire phi 0.14mm, the roller slot pitch is 0.67mm, the steel wire feeding speed is 400m/min, and the feeding amount is 0.10 mm/min; and (e) setting parameters of the multi-wire cutting machine in the step i to be steel wire phi 0.14mm, setting the roller slot pitch to be n +0.30mm, setting n to be the final size of the quartz tuning fork wafer, setting the steel wire feeding speed to be 400m/min and setting the feeding amount to be 0.10 mm/min.
5. A process for the production of large quartz wafers (4) according to claim 1, characterized in that: the GC #1000 grinding fluid comprises green silicon carbide GC # 1000: grinding agent: water 30%: 5%: 65 percent, wherein the grain diameter of the GC #1000 grinding fluid is 15 um; the GC #3000 grinding fluid comprises green silicon carbide GC # 3000: grinding agent: water-28%: 5%: 67 percent, the grain diameter of the GC #3000 grinding fluid is 5.5 um; .
6. The quartz tuning fork wafer production process of claim 1, wherein: the number of the wafers (4) in the step h is 62.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010944936.5A CN112092223A (en) | 2020-09-10 | 2020-09-10 | Quartz tuning fork wafer production process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010944936.5A CN112092223A (en) | 2020-09-10 | 2020-09-10 | Quartz tuning fork wafer production process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112092223A true CN112092223A (en) | 2020-12-18 |
Family
ID=73752272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010944936.5A Pending CN112092223A (en) | 2020-09-10 | 2020-09-10 | Quartz tuning fork wafer production process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112092223A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114046712A (en) * | 2021-10-25 | 2022-02-15 | 济源石晶光电频率技术有限公司 | Crystal weight thickness measuring system |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09155856A (en) * | 1995-12-06 | 1997-06-17 | Toyo Commun Equip Co Ltd | Quartz lumbered cutting apparatus |
| CN1164461A (en) * | 1996-03-28 | 1997-11-12 | 精工爱普生株式会社 | Method of manufacturing resonator pieces |
| JPH11207731A (en) * | 1998-01-28 | 1999-08-03 | Citizen Watch Co Ltd | Narrow width cutting and narrow groove working method |
| JP2000349048A (en) * | 1999-06-04 | 2000-12-15 | Meidensha Corp | Manufacture of quartz crystal piece |
| JP2007158678A (en) * | 2005-12-05 | 2007-06-21 | Seiko Instruments Inc | Apparatus and method of manufacturing tuning-fork crystal resonator |
| JP2011201161A (en) * | 2010-03-25 | 2011-10-13 | Seiko Instruments Inc | Method and apparatus for manufacturing wafer |
| CN103684307A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Method for manufacturing quartz crystal resonator |
| CN103684309A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Method for producing high-precision quartz crystal resonator |
| CN103817806A (en) * | 2013-12-24 | 2014-05-28 | 珠海东精大电子科技有限公司 | Loose wheel and method of producing quartz wafers |
| CN108582528A (en) * | 2018-03-26 | 2018-09-28 | 中山市海晶电子有限公司 | A kind of preparation method of the quartz wafer of super-wide temperature range low frequency change amount |
-
2020
- 2020-09-10 CN CN202010944936.5A patent/CN112092223A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09155856A (en) * | 1995-12-06 | 1997-06-17 | Toyo Commun Equip Co Ltd | Quartz lumbered cutting apparatus |
| CN1164461A (en) * | 1996-03-28 | 1997-11-12 | 精工爱普生株式会社 | Method of manufacturing resonator pieces |
| JPH11207731A (en) * | 1998-01-28 | 1999-08-03 | Citizen Watch Co Ltd | Narrow width cutting and narrow groove working method |
| JP2000349048A (en) * | 1999-06-04 | 2000-12-15 | Meidensha Corp | Manufacture of quartz crystal piece |
| JP2007158678A (en) * | 2005-12-05 | 2007-06-21 | Seiko Instruments Inc | Apparatus and method of manufacturing tuning-fork crystal resonator |
| JP2011201161A (en) * | 2010-03-25 | 2011-10-13 | Seiko Instruments Inc | Method and apparatus for manufacturing wafer |
| CN103684307A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Method for manufacturing quartz crystal resonator |
| CN103684309A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Method for producing high-precision quartz crystal resonator |
| CN103817806A (en) * | 2013-12-24 | 2014-05-28 | 珠海东精大电子科技有限公司 | Loose wheel and method of producing quartz wafers |
| CN108582528A (en) * | 2018-03-26 | 2018-09-28 | 中山市海晶电子有限公司 | A kind of preparation method of the quartz wafer of super-wide temperature range low frequency change amount |
Non-Patent Citations (4)
| Title |
|---|
| 杨树人 等: "外延生长技术", 国防工业出版社, pages: 21 - 25 * |
| 花宁;李怀阳;王友军;隋镁深;: "石英玻璃晶圆的加工工艺", 红外与激光工程, no. 2, pages 1 - 5 * |
| 董晓辉;: "谐振式石英音叉温度传感器机械切叉新方法", 科技创业家, no. 15, pages 150 - 151 * |
| 赵文宏;赵蓉;邓乾发;杨碧波;袁巨龙;: "石英晶片加工现状与发展", 航空精密制造技术, no. 01, pages 11 - 14 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114046712A (en) * | 2021-10-25 | 2022-02-15 | 济源石晶光电频率技术有限公司 | Crystal weight thickness measuring system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI564948B (en) | Hard and brittle materials for grinding, grinding processing systems and grinding, grinding methods | |
| CN101664970B (en) | Monocrystal silicon-rod butting technique | |
| WO2012101837A1 (en) | Grinding/polishing device for polygonal column member and grinding/polishing method | |
| TWI389770B (en) | Polygonal columnar members, abrasive devices for polygonal columnar members and grinding methods thereof | |
| CN108422286B (en) | Machining method of Stent roof prism and positioning tool thereof | |
| KR101333189B1 (en) | Method for Producing Wafer | |
| TWI589398B (en) | Columnar processing equipment | |
| KR20130082423A (en) | Polishing brush and polishing method | |
| CN112092223A (en) | Quartz tuning fork wafer production process | |
| CN104002250A (en) | Preparing method of ceramic bonding agent CBN (Cubic Boron Nitride) grinding wheel with precisely adjustable and controllable hardness attenuation value | |
| CN106584687A (en) | Monocrystalline silicon wafer cutting device and method | |
| JP6493253B2 (en) | Silicon wafer manufacturing method and silicon wafer | |
| CN110587837A (en) | Large-size silicon wafer cutting process | |
| US9102035B2 (en) | Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor | |
| JP2013132746A (en) | Grinding device and manufacturing method of sputtering target | |
| CN101518882B (en) | Large-scale precise production technology of segmental quartz wafers | |
| KR101485830B1 (en) | Single Crystal Silicon Componet with Improved Durability for Plasma Appratus and Preparation Method Thereof | |
| JP6471686B2 (en) | Silicon wafer chamfering method, silicon wafer manufacturing method, and silicon wafer | |
| CN1310739C (en) | Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid | |
| JP2002198762A (en) | Single crystal wafer and its manufacturing method | |
| WO2014020831A1 (en) | Method for manufacturing fz single crystal | |
| US20060194416A1 (en) | Method for producing single crystal ingot from which semiconductor wafer is sliced | |
| CN104149041A (en) | Method for manufacturing ceramic grinding wheel for silicon rod polishing by means of organic matter sponge in shaping mode | |
| CN109747057A (en) | Silicon carbide crystal bar multi-line cutting method | |
| TWI467645B (en) | Chemical mechanical polishing method and system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |