CN112034636A - 具有分段式电极的多模干涉光调制器 - Google Patents

具有分段式电极的多模干涉光调制器 Download PDF

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CN112034636A
CN112034636A CN202010841343.6A CN202010841343A CN112034636A CN 112034636 A CN112034636 A CN 112034636A CN 202010841343 A CN202010841343 A CN 202010841343A CN 112034636 A CN112034636 A CN 112034636A
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waveguide
multimode
electrode
light modulator
electrodes
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王磊
杨波
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Shaoxing Pangna Microelectronics Technology Co ltd
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Abstract

本发明提供了一种具有分段式电极的多模干涉光调制器，包括衬底，设于衬底上的缓冲层，设于缓冲层上的多模波导，包覆所述多模波导的包层，以及设于所述包层上的至少一条调制电极；所述调制电极包括位于所述多模波导上部并沿波导轴线方向间隔排布的分段工作电极，以及用于依次连接所述分段工作电极的连接电极；其中，工作电极对应所述多模波导的可调制区域，用于引起多模波导相应区域的折射率变化，所述连接电极对应所述多模波导的非调制区域或位于多模波导之外。本发明的光调制器具有结构紧凑，易于光电子集成，工艺容差大，制作工艺简单的特点，同时分段式电极的引入可将电光作用集中在光强比较集中的区域，提高能量利用率，减少驱动电压。

Description

具有分段式电极的多模干涉光调制器
技术领域
本发明涉及光通信技术领域，具体涉及一种具有分段式电极的多模干涉光调制器。
背景技术
光调制器是高速光通信系统中的关键器件，也是未来光器件小型化，集成化的重要光学器件之一。光调制器按照其调制原理可分为电光、热光、声光、全光等，它们所依据的基本理论是各种不同形式的电光效应、声光效应、磁光效应、Franz-Keldysh效应、量子阱Stark效应、载流子色散效应等。其中电光调制器是通过电压或电场的变化实现调控输出光振幅或相位的器件，它在损耗、功耗、速度、光电子集成等方面都优于其它类型的调制器。
目前光调制器的基本结构主要有马赫泽德(MZI)和微环(Micro Ring)两种结构，MZI调制器具有高带宽、低电压、高调制速率等优点，但由于MZI双臂存在折射率、尺寸、温度、应力等差异性，需要直流偏置电压来补偿。同时由于双臂波导结构和应力等因素的差异，MZI调制器一般是偏振相关的。微环调制器也具有低电压、高调制速率等优点，但带宽比较窄，同时也存在偏振相关和直流偏置补偿等问题。
发明内容
本发明的目的在于提供一种具有分段式电极的多模干涉光光调制器。
为实现上述目的，本发明采用了如下技术方案：
一种具有分段式电极的多模干涉光调制器，包括衬底，设于衬底上的缓冲层，设于缓冲层上的多模波导，包覆所述多模波导的包层，以及设于所述包层上的至少一条调制电极；所述调制电极包括位于所述多模波导上部并沿波导轴线方向间隔排布的分段工作电极，以及用于依次连接所述分段工作电极的连接电极；其中，所述工作电极对应所述多模波导的可调制区域，用于引起多模波导相应区域的折射率变化，所述连接电极对应所述多模波导的非调制区域或位于多模波导之外，加电后不影响波导的折射率变化。
进一步的，所述分段工作电极的中心分别对应于多模波导上(i-1/2)/n*L1的位置；其中，n为大于1的正整数，i为小于n的正整数，L1为多模波导的长度。
进一步的，所述分段工作电极为条状电极，并沿多模波导的轴线方向均匀间隔排布。
进一步的，所述多模干涉光调制器还包括参考地电极，所述参考地电极与所述调制电极共面设置，或者设置于所述缓冲层上，或者设置于所述衬底背面。
进一步的，所述多模干涉光调制器还包括输入波导，输出波导，以及用于耦接所述输入波导和多模波导输入端的输入锥形波导，和用于耦接所述多模波导输出端和输出波导的输出锥形波导，其中，所述输入波导和输出波导均为单模波导。
进一步的，所述输入波导和输入锥形波导为一体式结构，所述输出锥形波导和输出波导为一体式结构。
可选的，所述分段工作电极引起多模波导折射率变化的物理效应包括但不限于电光效应、磁光效应、热光效应、声光效应、Franz-Keldysh效应、量子阱Stark效应或载流子色散效应。
可选的，所述多模干涉光调制器基于硅、硅锗或硅掺其他杂质、二氧化硅、氮化硅、氮氧化硅、磷化铟、聚合物、铌酸锂或三族氮化物材料制成。
进一步的，所述多模干涉光调制器的制备基于半导体工艺实现。
本发明具有的有益技术效果如下：
1)本发明中发生干涉的两部分光在同一个多模波导中传输，不同于MZI和Ring调制器中干涉的两部分光的在不同单模波导中传输，本发明可以避免MZI和Ring调制器中由于波导工艺以及环境的差异而引起的功率或波长漂移，因而本发明可以不需要直流偏置补偿。
2)本发明所采用的分段式电极可以将电-光作用集中在MMI波导光强比较强的区域，从而提高驱动能量的利用效率，减少电极所需的驱动电压。
3)本发明采用的多模干涉(MMI)结构具有比较小的偏振相关性，可实现偏振无关的光调制，避免MZI和Ring调制器中由于波导结构和工艺引起的偏振相关性。
4)本发明采用的MMI结构可以实现均匀分光，具有高消光比特性，可以避免MZI因分光不均引起的消光比劣化问题。
5)本发明采用MMI结构，其波导结构紧凑，易于集成，可与激光器，光接收器集成。
6)本发明采用的MMI结构工艺容差大，可以采用相对简单的半导体工艺来实现。而MZI光调制器和Ring光调制器半导体制作工艺相对复杂。
7)本发明还具有高带宽等优点，带宽特性与MZI光调制器相当，优于微环光调制器。
附图说明
图1为本发明的多模干涉光调制器第一种实施方式的俯视结构示意图。
图2为图1中所示实施例的横截面示意图。
图3为本发明的多模干涉光调制器第二种实施方式的俯视结构示意图。
图4为本发明的多模干涉光调制器第三种实施方式的俯视结构示意图。
图5为本发明的多模干涉光调制器第四种实施方式的俯视结构示意图。
图6为本发明的多模干涉光调制器第五种实施方式的俯视结构示意图。
图7为本发明的多模干涉光调制器第六种实施方式的俯视结构示意图。
图8为本发明的多模干涉光调制器实施例的设计示意图。
图9为信号‘1’在电极加电后折射率变化为Δ时的光场分布仿真图。
图10为信号‘0’在电极加电后折射率变化为Δ时的光场分布仿真图。
图11为仿真计算结果曲线图。
具体实施方式
为了进一步理解本发明，下面结合实施例对本发明优选实施方案进行描述，但是应当理解，这些描述只是为进一步说明本发明的特征和优点，而不是对本发明权利要求的限制。
实施例1
如图1和2所示为本发明的的多模干涉光调制器第一种实施方式的结构示意图，其包括衬底1，衬底1上设有缓冲层2，缓冲层2上设有多模波导3，以及输入波导200，输出波导300，以及耦接输入波导200和多模波导3输入端的输入锥形波导400，和用于耦接所述多模波导3输出端和输出波导300的输出锥形波导500，上述各波导均由设于缓冲层2上的包层4包覆。在包层4上，共面设有调制电极5和参考地电极6。
调制电极5包括位于多模波导3上部并沿波导轴线方向间隔排布的分段工作电极51，以及用于依次连接分段工作电极51的连接电极52。其中，工作电极51对应多模波导3的可调制区域，用于在加电时引起多模波导相应区域的折射率变化，以改变相应区域的光的传播相位，从而改变输出波导300中的光能量。连接电极52对应多模波导3的非调制区域，或位于多模波导之外，加电后不影响波导的折射率变化。
作为优选实施方案，本实施例中，分段工作电极51为条状电极，并沿多模波导3的轴线方向均匀间隔排布。
作为优选实施方案，本实施例中，分段工作电极51的中心分别对应于多模波导3上(i-1/2)/n*L1的位置；其中，n为大于1的正整数，i为小于n的正整数，L1为多模波导的长度。同时，多模波导3输出端光场是多模波导3输入端光场的自映像，保证光能量最大化地进入输出波导300。
作为优选实施方案，本实施例中，输入波导200和输出波导300均为单模波导，且两者的宽度小于多模波导3。输入锥形波导400和输出锥形波导500的折射率可变以实现模式匹配，且输入锥形波导400的长度要尽可能长，使输入波导200里的光能量能够全部进入多模波导3；同时输出锥形波导500的长度也要尽可能长，使多模波导3里的光能量能够全部被输出波导300接收。输入波导200和输入锥形波导400可为一体式结构，输出锥形波导500和输出波导300可为一体式结构。
本实施例中的多模干涉光调制器，工作原理为：光从输入波导200进入，然后通过输入锥形波导400展宽后入射到多模波导3。多模波导3存在至少2个以上的模式，光束进入后发生多模自映像效应，会沿着长度方向传播时周期性的呈现双像和单像，其中呈单像的位置为i/n*L1，呈双像的位置为(i-1/2)/n*L1。当对多模波导3不施加任何改变时，光束在多模波导3结束的地方，也就是输出端处呈单像，全部光能量可以无损的通过多模波导3进入到后面的输出锥形波导500并进入输出波导300。为调制多模波导3的光能量透过率，将分段工作电极51覆盖在各个呈双像的位置，即(i-1/2)/n*L1处，当分段工作电极51施加电信号时，多模波导3上对应分段工作电极51的区域折射率会产生变化，导致双像中一个像经历的相位发生变化，使得输出端处不再呈现单像，输出到输出波导300的光能量下降。连接电极52的作用是将分段工作电极51连接起来，两者共同构成调制电极5。参考地电极6为地电极，目的在于与调制电极5产生电势差，从而可以产生电场，调制多模波导3中特定区域的折射率。
实施例2
如图3所示为本发明的的多模干涉光调制器第二种实施方式的结构示意图，与上述第一种实施方式的区别在于参考地电极6位于衬底1背面，由大面积的金属构成。其基本结构和工作原理与上述第一种实施方式类似，在此不作详细说明。
实施例3
如图4所示为本发明的的多模干涉光调制器第三种实施方式的结构示意图，与前述第一种实施方式的区别在于包层4仅覆盖缓冲层2的部分区域，参考地电极6设于缓冲层2上未被包层4覆盖的区域。其基本结构和工作原理与前述第一种实施方式类似，在此不作详细说明。
实施例4
如图5所示为本发明的的多模干涉光调制器第四种实施方式的结构示意图，与前述第一种实施方式的区别在于调制电极沿波导轴线方向设置为两条5a和5b，相应的参考地电极也设置为与调制电极共面的两条6a和6b。其基本结构和工作原理与前述第一种实施方式类似，在此不作详细说明。采用此种结构，电极可同时改变双像中两个像的相位，从而达到更好的调制效果。
实施例5
如图6所示为本发明的的多模干涉光调制器第五种实施方式的结构示意图，与上述第四种实施方式相同，调制电极沿波导轴线方向设置为两条5a和5b，各自包括分段工作电极51a和51b，以及连接电极52a和52b。区别在于参考地电极6位于衬底1背面，由大面积的金属构成。其基本结构和工作原理与前述第一种实施方式类似，在此不作详细说明。
实施例6
如图7所示为本发明的的多模干涉光调制器第六种实施方式的结构示意图，与上述第四种实施方式相同，调制电极沿波导轴线方向设置为两条5a和5b，各自包括分段工作电极51a和51b，以及连接电极52a和52b。区别在于包层4仅覆盖缓冲层2的部分区域，参考地电极6a、6b设于缓冲层2上未被包层4覆盖的区域。其基本结构和工作原理与前述第一种实施方式类似，在此不作详细说明。
实施例7
本实施例给出了上述实施例中多模干涉光调制器的具体制备方法。如图8所示，设计确定多模波导长度L1(um),多模波导宽度W1(um)，电极长度L2(um),锥形波导长度L3(um)，波导材料为GaN。主要工艺是采用MOCVD工艺技术在蓝宝石衬底上生长AlGaN作为缓冲层，再生长厚度为2(um)的GaN外延片,然后进行光刻，刻蚀,填充，溅射，覆盖SiO2包层等一系列半导体工艺，形成一定折射率差的光波导及电极。
对上述工艺制备的多模干涉光调制器进行仿真。仿真的应用波长为1.55um，图9和图10分别为信号‘1’和‘0’在电极加电后折射率变化为Δ时的光场分布仿真图，仿真计算数据如图11所示，结果证明本发明的方案具有偏振不敏感、高带宽和高消光比等优点。
上述任意实施例或其它未具体列出的实施方案中，分段工作电极引起多模波导折射率变化的物理效应包括但不限于电光效应、磁光效应、热光效应、声光效应、Franz-Keldysh效应、量子阱Stark效应或载流子色散效应。多模干涉光调制器的基本结构可基于硅、硅锗或硅掺其他杂质、二氧化硅、氮化硅、氮氧化硅、磷化铟、聚合物、铌酸锂或三族氮化物材料采用半导体工艺制备。
需要说明的是，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这些改进和修饰也落入本发明权利要求的保护范围内。

Claims (9)

1.一种具有分段式电极的多模干涉光调制器，其特征在于，包括衬底(1)，设于衬底(1)上的缓冲层(2)，设于缓冲层(2)上的多模波导(3)，包覆所述多模波导(3)的包层(4)，以及设于所述包层(4)上的至少一条调制电极(5)；所述调制电极(5)包括位于所述多模波导上部并沿波导轴线方向间隔排布的分段工作电极(51)，以及用于依次连接所述分段工作电极(51)的连接电极(52)；其中，所述工作电极(51)对应所述多模波导(3)的可调制区域，用于引起多模波导相应区域的折射率变化，所述连接电极(52)对应所述多模波导(3)的非调制区域或位于多模波导之外，加电后不影响波导的折射率变化。
2.如权利要求1所述的具有分段式电极的多模干涉光调制器，其特征在于，所述分段工作电极(51)的中心分别对应于多模波导(3)上(i-1/2)/n*L1的位置；其中，n为大于1的正整数，i为小于n的正整数，L1为多模波导的长度。
3.如权利要求1所述的具有分段式电极的多模干涉光调制器，其特征在于，所述分段工作电极(51)为条状电极，并沿多模波导(3)的轴线方向均匀间隔排布。
4.如权利要求1-3任一项所述的具有分段式电极的多模干涉光调制器，其特征在于，还包括参考地电极(6)，所述参考地电极(6)与所述调制电极(5)共面设置，或者设置于所述缓冲层(2)上，或者设置于所述衬底(1)背面。
5.如权利要求4所述的具有分段式电极的多模干涉光调制器，其特征在于，还包括输入波导(200)，输出波导(300)，以及用于耦接所述输入波导(200)和多模波导(3)输入端的输入锥形波导(400)，和用于耦接所述多模波导(3)输出端和输出波导(300)的输出锥形波导(500)，其中，所述输入波导(200)和输出波导(300)均为单模波导。
6.如权利要求5所述的具有分段式电极的多模干涉光调制器，其特征在于，所述输入波导(200)和输入锥形波导(400)为一体式结构，所述输出锥形波导(500)和输出波导(300)为一体式结构。
7.如权利要求4所述的具有分段式电极的多模干涉光调制器，其特征在于，所述分段工作电极引起多模波导折射率变化的物理效应包括但不限于电光效应、磁光效应、热光效应、声光效应、Franz-Keldysh效应、量子阱Stark效应或载流子色散效应。
8.如权利要求4所述的具有分段式电极的多模干涉光调制器，其特征在于，所述多模干涉光调制器基于硅、硅锗或硅掺其他杂质、二氧化硅、氮化硅、氮氧化硅、磷化铟、聚合物、铌酸锂或三族氮化物材料制成。
9.如权利要求4所述的具有分段式电极的多模干涉光调制器，其特征在于，所述多模干涉光调制器的制备基于半导体工艺实现。
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