CN112020775A - 阵列基板及其制备方法、显示装置 - Google Patents
阵列基板及其制备方法、显示装置 Download PDFInfo
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- CN112020775A CN112020775A CN201880091083.6A CN201880091083A CN112020775A CN 112020775 A CN112020775 A CN 112020775A CN 201880091083 A CN201880091083 A CN 201880091083A CN 112020775 A CN112020775 A CN 112020775A
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- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 238000002360 preparation method Methods 0.000 title claims description 16
- 239000010410 layer Substances 0.000 claims abstract description 641
- 239000011241 protective layer Substances 0.000 claims abstract description 51
- 238000009413 insulation Methods 0.000 claims description 39
- 239000011229 interlayer Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- -1 oxygen ions Chemical class 0.000 description 17
- 238000002161 passivation Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明提供了一种阵列基板，其特征在于，所述阵列基板包括：基底、有源层、绝缘层及保护层，所述有源层、绝缘层以及保护层均设置在所述基底的一侧，所述保护层覆盖所述有源层的至少部分表面，使所述保护层所覆盖的有源层的至少部分表面与所述绝缘层相间隔。本发明还提供一种阵列基板的制备方法和显示装置，本发明提供的阵列基板能够保护有源层不被绝缘层或者外界的水气、氢氧元素的影响，提高阵列基板的电学稳定性。
Description
PCT国内申请，说明书已公开。
Claims (17)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/084211 WO2019204977A1 (zh) | 2018-04-24 | 2018-04-24 | 阵列基板及其制备方法、显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112020775A true CN112020775A (zh) | 2020-12-01 |
Family
ID=68294355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880091083.6A Pending CN112020775A (zh) | 2018-04-24 | 2018-04-24 | 阵列基板及其制备方法、显示装置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN112020775A (zh) |
| WO (1) | WO2019204977A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621076A (zh) * | 2008-06-30 | 2010-01-06 | 三星移动显示器株式会社 | 薄膜晶体管及其制造方法和平板显示装置 |
| CN101621075A (zh) * | 2008-06-30 | 2010-01-06 | 三星移动显示器株式会社 | 薄膜晶体管及其制造方法和平板显示装置 |
| CN104900706A (zh) * | 2014-03-06 | 2015-09-09 | 三星显示有限公司 | 薄膜晶体管、其基板、显示设备及制造薄膜晶体管的方法 |
| CN105097950A (zh) * | 2015-08-24 | 2015-11-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及制作方法、阵列基板、显示装置 |
| US20160268443A1 (en) * | 2013-08-20 | 2016-09-15 | Boe Technology Group Co., Ltd. | Thin Film Transistor, Array Substrate and Method of Fabricating the Same, and Display Device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
| CN105261654B (zh) * | 2015-11-05 | 2018-12-28 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示面板 |
-
2018
- 2018-04-24 WO PCT/CN2018/084211 patent/WO2019204977A1/zh active Application Filing
- 2018-04-24 CN CN201880091083.6A patent/CN112020775A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621076A (zh) * | 2008-06-30 | 2010-01-06 | 三星移动显示器株式会社 | 薄膜晶体管及其制造方法和平板显示装置 |
| CN101621075A (zh) * | 2008-06-30 | 2010-01-06 | 三星移动显示器株式会社 | 薄膜晶体管及其制造方法和平板显示装置 |
| US20160268443A1 (en) * | 2013-08-20 | 2016-09-15 | Boe Technology Group Co., Ltd. | Thin Film Transistor, Array Substrate and Method of Fabricating the Same, and Display Device |
| CN104900706A (zh) * | 2014-03-06 | 2015-09-09 | 三星显示有限公司 | 薄膜晶体管、其基板、显示设备及制造薄膜晶体管的方法 |
| CN105097950A (zh) * | 2015-08-24 | 2015-11-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及制作方法、阵列基板、显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019204977A1 (zh) | 2019-10-31 |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20201201 |
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| WD01 | Invention patent application deemed withdrawn after publication |