CN112019167B - 放大装置和方法 - Google Patents

放大装置和方法

Info

Publication number
CN112019167B
CN112019167B CN202010410879.2A CN202010410879A CN112019167B CN 112019167 B CN112019167 B CN 112019167B CN 202010410879 A CN202010410879 A CN 202010410879A CN 112019167 B CN112019167 B CN 112019167B
Authority
CN
China
Prior art keywords
transistor
input
signal
amplifying unit
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010410879.2A
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English (en)
Chinese (zh)
Other versions
CN112019167A (zh
Inventor
伊藤拓也
矢崎知海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN112019167A publication Critical patent/CN112019167A/zh
Application granted granted Critical
Publication of CN112019167B publication Critical patent/CN112019167B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/432—Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
CN202010410879.2A 2019-05-28 2020-05-15 放大装置和方法 Active CN112019167B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-099501 2019-05-28
JP2019099501A JP7366589B2 (ja) 2019-05-28 2019-05-28 増幅装置及び方法

Publications (2)

Publication Number Publication Date
CN112019167A CN112019167A (zh) 2020-12-01
CN112019167B true CN112019167B (zh) 2025-11-04

Family

ID=73506549

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010410879.2A Active CN112019167B (zh) 2019-05-28 2020-05-15 放大装置和方法

Country Status (3)

Country Link
US (1) US11356063B2 (cg-RX-API-DMAC7.html)
JP (1) JP7366589B2 (cg-RX-API-DMAC7.html)
CN (1) CN112019167B (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115014506B (zh) * 2022-08-08 2022-11-04 山西中辐核仪器有限责任公司 一种振动检测电路及便携式仪器
CN115967389A (zh) * 2022-12-16 2023-04-14 锐石创芯(深圳)科技股份有限公司 电容切换电路、射频放大电路以及射频前端模组

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252182A (ja) * 2007-03-29 2008-10-16 Fujitsu Ltd デジタル制御型送信機およびその制御方法

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US6313698B1 (en) * 1999-09-24 2001-11-06 Qualcomm Incorporated Method and apparatus for wireless phone transmit power amplification with reduced power consumption
US20030080811A1 (en) * 2001-10-05 2003-05-01 Toshifumi Nakatani Variable gain amplifying apparatus and wireless communication apparatus
JP2004140518A (ja) 2002-10-16 2004-05-13 Renesas Technology Corp 高周波電力増幅用電子部品および無線通信システム
CN101088214B (zh) * 2004-12-21 2010-05-05 艾利森电话股份有限公司 已调射频信号的生成
KR100656333B1 (ko) * 2005-04-27 2006-12-13 한국과학기술원 자동 스위칭 기능을 갖는 전력증폭기
US7714649B1 (en) * 2008-06-02 2010-05-11 Rockwell Collins, Inc. High-efficiency linear amplifier using non linear circuits
JP2011015077A (ja) * 2009-06-30 2011-01-20 Toshiba Corp 信号増幅器
US8681894B2 (en) * 2009-11-03 2014-03-25 Telefonaktiebolaget L M (Publ) Digital affine transformation modulated power amplifier for wireless communications
WO2012074133A1 (ja) * 2010-12-02 2012-06-07 日本電気株式会社 電源回路および電源制御方法
US8554162B2 (en) * 2011-08-03 2013-10-08 St-Ericsson Sa High efficiency power amplifier
US8482348B2 (en) * 2011-08-30 2013-07-09 Intel Mobile Communications GmbH Class of power amplifiers for improved back off operation
WO2013115039A1 (ja) * 2012-02-03 2013-08-08 日本電気株式会社 電源装置及びこれを用いた送信装置
JPWO2013133170A1 (ja) * 2012-03-06 2015-07-30 日本電気株式会社 送信装置
WO2014117402A1 (zh) * 2013-02-04 2014-08-07 华为技术有限公司 功率放大器、收发信机及基站
JP5974921B2 (ja) * 2013-02-13 2016-08-23 株式会社ソシオネクスト 増幅器及び無線通信装置
JP6149452B2 (ja) * 2013-03-22 2017-06-21 富士通株式会社 電源装置および半導体集積回路装置
KR102114726B1 (ko) * 2013-10-23 2020-06-05 삼성전자주식회사 전력 증폭 장치 및 방법
GB2557750B (en) * 2013-10-23 2018-08-22 Cirrus Logic Int Semiconductor Ltd Class-D Amplifier Circuits
US9859847B2 (en) * 2014-09-02 2018-01-02 Samsung Electronics Co., Ltd Parallel combined output linear amplifier and operating method thereof
FR3035285B1 (fr) * 2015-04-14 2017-05-12 St Microelectronics Grenoble 2 Circuit d'amplification de puissance de signaux radiofrequence

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008252182A (ja) * 2007-03-29 2008-10-16 Fujitsu Ltd デジタル制御型送信機およびその制御方法

Also Published As

Publication number Publication date
JP2020195061A (ja) 2020-12-03
CN112019167A (zh) 2020-12-01
JP7366589B2 (ja) 2023-10-23
US11356063B2 (en) 2022-06-07
US20200382068A1 (en) 2020-12-03

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