CN112008595A - Wafer grinding device and grinding method - Google Patents

Wafer grinding device and grinding method Download PDF

Info

Publication number
CN112008595A
CN112008595A CN202010911819.9A CN202010911819A CN112008595A CN 112008595 A CN112008595 A CN 112008595A CN 202010911819 A CN202010911819 A CN 202010911819A CN 112008595 A CN112008595 A CN 112008595A
Authority
CN
China
Prior art keywords
wafer
grinding
centering
polishing
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010911819.9A
Other languages
Chinese (zh)
Inventor
吴俊�
向宏阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chnchip Engineering Co ltd
Original Assignee
Chnchip Engineering Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chnchip Engineering Co ltd filed Critical Chnchip Engineering Co ltd
Priority to CN202010911819.9A priority Critical patent/CN112008595A/en
Publication of CN112008595A publication Critical patent/CN112008595A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to the technical field of wafer preparation, in particular to a wafer grinding device and a grinding method, which comprises a feeding and discharging mechanism, a centering mechanism, a grinding mechanism and a cleaning mechanism which are sequentially arranged along the process flow direction of a wafer.

Description

Wafer grinding device and grinding method
Technical Field
The invention relates to the technical field of wafer preparation, in particular to a wafer grinding device and a grinding method.
Background
The wafer refers to a silicon chip used for manufacturing a silicon semiconductor integrated circuit, the wafer is a carrier used for producing the integrated circuit, and the wafer generally refers to a monocrystalline silicon wafer. Wafers are the most commonly used semiconductor materials, and are classified into 4-inch, 5-inch, 6-inch, 8-inch, and so on, according to their diameters, and recently 12-inch and even larger sizes are developed. The larger the wafer, the more ICs can be produced on the same wafer, which can reduce cost. Carry out integrated circuit processing technology at the front of wafer after, can carry out the attenuate to the back of this wafer, so that carry out the technology at other backs, in a typical application, after accomplishing integrated circuit processing technology, utilize wafer level packaging technology to pile up different wafers and bond together, and realize the attenuate from the back of wafer, the attenuation is got rid of thickness and is reached more than 90% of wafer thickness, need realize quick attenuate through grinding equipment, and current wafer grinding equipment mostly has the quality unstability, cause the chip to damage easily, and wafer attenuate back surface smoothness, the not enough problem of roughness, lead to the product yield low, manufacturing cost is high.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a wafer grinding device which can stably reduce the thickness of a wafer, improve the yield of products and reduce the production cost.
The invention also provides a wafer grinding method realized by adopting the wafer grinding device.
The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides a wafer grinder, includes last unloading mechanism, centering mechanism, grinding mechanism and the wiper mechanism that sets gradually along the technological process direction of wafer, wherein: the feeding and discharging mechanism comprises a material table and a first mechanical arm, and the first mechanical arm is used for transferring a wafer to be processed to the centering mechanism and transferring the processed wafer from the cleaning mechanism to the material table; the centering mechanism comprises a centering table, a driving assembly and three centering claws arranged on the centering table along the circumferential direction, and the driving assembly is used for driving the centering claws to move towards the direction far away from or close to the circle center of the centering table; the grinding mechanism comprises a base and three grinding tables arranged on the base, wherein a coarse grinding assembly and a fine grinding assembly are further arranged above the base, and the three grinding tables can sequentially rotate to the positions below the coarse grinding assembly and the fine grinding assembly; the cleaning mechanism comprises a cleaning table and a blowing assembly arranged on one side of the grinding mechanism, the blowing assembly is arranged from bottom to top, the cleaning table is connected with a rotation driving assembly, and water spray guns are arranged on the periphery of the cleaning table.
Furthermore, a working surface on the centering claw, which is close to the direction of the center of the centering table, is an arc surface, and the working surface inclines towards the direction of the center of the centering table from top to bottom.
Furthermore, the three centering claws are uniformly distributed along the circumferential direction of the centering table, and a detection sensor is arranged at a position, located between two adjacent centering claws, on the centering table.
Further, a first rotary driving mechanism is arranged on the base at the position corresponding to the coarse grinding assembly and the fine grinding assembly, and the first rotary driving mechanism is detachably connected with the grinding table.
Further, the grinding table is in including being annular fixed plate, setting the rotor plate of fixed plate bottom and with rotor plate fixed connection's grinding plate, a plurality of negative pressure hole has been seted up on the grinding plate, the grinding plate lid is established on the fixed plate and with form the negative pressure chamber between the fixed plate, the negative pressure chamber is external to have the negative pressure pipe.
Furthermore, the bottom of the rotating plate is provided with a connecting shaft, and the connecting shaft is in clutch connection with the output end of the first rotating driving mechanism.
Further, grind mechanism still includes the carousel, and three it is in along circumference equipartition to grind the platform on the carousel, the carousel rotation is in order to order about the grinding platform rotates to the below of corase grind subassembly or accurate grinding subassembly.
Further, the rough grinding assembly and/or the fine grinding assembly comprise a rack and a grinding head arranged on the rack, the rack is connected with a vertical driving mechanism, and the grinding head is connected with a rotating main shaft.
Further, the grinding head comprises a disc-shaped body and a grinding part arranged on the outer edge of the body.
Further, the grinding head is arranged obliquely.
Further, the rotating main shaft is a hollow shaft component, a first magnet part is arranged on the inner wall of the rotating main shaft, the grinding head is connected with a rotating driven shaft, one end of the rotating driven shaft penetrates through a static pressure gas bearing and is contained in the rotating main shaft, at least one inclination adjusting mechanism is arranged at the end part of the static pressure gas bearing, and a second magnet part matched with the first magnet part is arranged on the outer wall of the rotating driven shaft.
Further, the static pressure gas bearing comprises a bearing shell and a hollow shaft arranged in the bearing shell, the hollow shaft is sleeved on the rotating driven shaft, a thrust plate is arranged on the upper end face of the bearing shell, and the thrust plate is connected with the inclination adjusting mechanism.
Further, a baffle is arranged on the periphery of the cleaning table, and the water spray gun is arranged on the inner wall of the baffle and faces the center of the cleaning table.
The invention also provides a wafer grinding method, which comprises the following steps:
centering, namely placing a wafer to be processed on a centering mechanism to measure the center position of the wafer;
roughly grinding, cutting in by the grinding head from a point C of the wafer, cutting out from a point B of the wafer and forming a CB roughly grinding trace on the surface of the wafer;
fine grinding, namely cutting in the grinding head from a point B of the wafer, cutting out the grinding head from a point A of the wafer and forming a BA fine grinding trace on the surface of the wafer;
and cleaning, namely flushing the surface of the wafer with water, and spinning the wafer to spin water stains by centrifugal force.
The invention has the following beneficial effects: the wafer grinding device provided by the invention has the advantages that the centering is firstly carried out before the rough grinding of the wafer, the circle center position of the wafer is determined, the grinding precision is provided, the rough grinding and the fine grinding can be simultaneously carried out on the two wafers, the grinding efficiency is improved, in addition, the grinding dust attached to the wafer is blown away through the air blowing assembly after the grinding, the cleaning table is driven to rotate through the rotation driving assembly, the water stain on the wafer is dried through the centrifugal force effect, and the cleanness of the ground surface of the wafer is ensured.
According to the grinding method, the grinding head cuts in from the point C during rough grinding, grinding operation is carried out along the arc line CB, a plurality of arc line traces in the clockwise direction are formed on the surface of the wafer, the grinding head cuts in from the point B during fine grinding, grinding operation is carried out along the arc line BA, and a plurality of arc line traces in the anticlockwise direction are formed on the surface of the wafer, namely the fine grinding trace is opposite to the rough grinding trace, the surface smoothness and roughness of the thinned wafer can be guaranteed, meanwhile, the grinding efficiency is improved, and the production cost is reduced.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic view of a wafer polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a polishing table according to an embodiment of the present invention;
FIG. 3 is a schematic view of a structure of a fine grinding assembly or a rough grinding assembly according to an embodiment of the present invention;
FIG. 4 is a schematic structural view of a cleaning mechanism according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating grinding traces after rough grinding of a wafer according to an embodiment of the present invention;
fig. 6 is a schematic diagram illustrating grinding traces after wafer lapping according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 4, a wafer polishing apparatus includes a feeding and discharging mechanism, a centering mechanism, a polishing mechanism and a cleaning mechanism, which are sequentially arranged along a process flow direction of a wafer, wherein:
referring to fig. 1, the loading and unloading mechanism includes a material table 110 and a first robot 120, the material table 110 is used for placing a wafer to be processed and a processed wafer, a plurality of support plates are arranged on the material table 110, the first robot 120 may be of a conventional design and model in the industry, and may be a conventional six-axis robot, which generally has a plate-shaped structure, and a plurality of adsorption holes are formed on the robot of the plate-shaped structure, so that the wafer can be adsorbed on the robot by an adsorption manner, and the wafer to be processed is transferred from the material table 110 to the centering mechanism or the processed wafer is transferred from the cleaning mechanism to the material table 110 by the robot.
Referring to fig. 1, the centering mechanism includes a centering table 210, a driving assembly, and three centering jaws 220 circumferentially disposed on the centering table 210, wherein the driving assembly is configured to drive the centering jaws 220 to move in a direction away from or close to a center of the centering table 210, specifically, the centering jaws 220 are disposed in the centering table 210 and protrude from an upper end surface of the centering table 210, the driving assembly may be a horizontally disposed electric push rod, and at least one guide rod facing the center of the circle is disposed on the centering table 210, and the driving assembly is configured to drive the centering jaws 220 to move in a direction towards the center of the centering table 210 or away from the center of the centering table 210 along the guide rod.
Referring to fig. 1, the grinding mechanism includes a base 310 and three grinding tables 330 disposed on the base 310, a rough grinding assembly 340 and a fine grinding assembly 350 are further disposed above the base 310, and the rough grinding assembly 340 and the fine grinding assembly 350 are distributed along the circumferential direction of the base 310, it should be noted that the three grinding tables 330 are uniformly distributed on the base 310 along the circumferential direction, the base 310 is circular, and the three grinding tables 330 can rotate along the center of the base 310 to sequentially rotate below the rough grinding assembly 340 and the fine grinding assembly 350; it should be noted that the grinding table 330 can drive the wafer to rotate, the wafer rotation can be either counterclockwise rotation or clockwise rotation, the fine grinding assembly 350 and the rough grinding assembly 340 can adopt the same structural design, and the structural difference between the fine grinding assembly 350 and the rough grinding assembly 340 is that the mesh number of the grinding sheets is different, and the rotation speed of the fine grinding assembly 350 is higher than that of the rough grinding assembly 340 when in use, so the design aims at reducing the design and manufacturing cost of the equipment; it should be noted that a second robot (not shown) is further disposed between the centering mechanism and the grinding mechanism, the second robot may be of a design and model conventional in the industry, the second robot is used for transferring the centered wafer to be processed onto the grinding table 330, the second robot may be a conventional six-axis robot, and the grabbing end is in a plate shape, and a plurality of suction holes are disposed on the plate-shaped grabbing end.
Referring to fig. 1, the cleaning mechanism comprises a cleaning table 420 and an air blowing assembly 410 arranged on one side of the grinding mechanism, the air blowing assembly 410 is arranged from bottom to top, the cleaning table 420 is connected with a rotation driving assembly 450, and a water spraying gun 430 is arranged on the periphery of the cleaning table 420; it should be noted that a third robot (not shown) is further disposed between the grinding mechanism and the cleaning mechanism, the third robot, which may be of a type and design conventional in the art, is used to transfer the polished wafer to the cleaning station 420 for cleaning operations, and passes under the gas blowing assembly 410 during the transfer of the polished wafer by the third robot, the blowing assembly 410 blows off the abrasive dust on the lower surface of the wafer, so that the side of the wafer close to the cleaning table 420 is prevented from attaching abrasive dust and cannot be horizontally placed on the cleaning table 420, and the wafer ground by the third robot is placed on the cleaning table 420, the cleaning table 420 is rotated by rotating the driving assembly 450, the water spraying gun 430 sprays water to wash the surface of the wafer, and the wafer rotates to spin-dry the water stain attached to the surface of the wafer through centrifugal force, so that the cleaning effect and the cleanness and no water stain on the surface of the wafer are ensured.
In some embodiments, the working surface of the centering claw 220 close to the center of the centering table 210 is a cambered surface, and the working surface is inclined from top to bottom toward the center of the centering table 210, so as to ensure that the wafer can be placed between the three centering claws 220, and the three centering claws 220 are driven by the driving assembly to be close to or away from the center of the centering table 210, so that the center of the wafer coincides with the center of the centering table 210, in some embodiments, the three centering claws 220 are respectively connected with three electric push rods, that is, the three centering claws 220 move independently, so as to ensure that the wafer can be horizontally placed and concentric with the centering table 210 under the cooperation driving of the three centering claws 220, and it should be noted that in the above embodiments, the driving assembly may be a conventional electric push rod.
In some embodiments, the centering table 210 is circular, and three centering claws 220 are uniformly distributed along the circumference of the circular centering table 210, a detection sensor 230 is disposed on the centering table 210 at a position between two adjacent centering claws 220, the detection sensor 230 may be a photoelectric sensor, and the detection sensor 230 can detect the distance between the upper end surface of the centering table 210 and the lower end surface of the wafer; specifically, three detecting sensors 230 are uniformly distributed along the circumferential direction of the centering table 210, the diameter of a circle formed between the three detecting sensors 230 is equal to or slightly larger than the diameter of the wafer, and the circle formed between the three detection sensors 230 is concentric with the centering stage 210, such as the circle formed between the three detection sensors 230 having a diameter greater than or equal to 1.0 times and less than or equal to 1.05 times the diameter of the wafer, in the centering operation, the first robot arm 120 places the wafer to be processed on the centering table 210 and is supported by the three centering claws 220, at which time at least two detection sensors 230 can detect the lower end surface of the wafer, and compares the distance values detected by the two detecting sensors 230 to adjust the centering claw 220 to be close to or far from the center of the centering table 210, thus, the distance values detected by the two detection sensors 230 are the same, and thus, the wafer to be processed is horizontally placed; the three centering claws 220 are further linked to the lower end surfaces of the wafers detected by all the three detecting sensors 230 or the lower end surfaces of the wafers not detected by all the detecting sensors 230, so as to determine that the wafers are concentric with the centering table 210, if two of the detecting sensors 230 detect the wafers and the other detecting sensor 230 does not detect the wafers, the centering claw 220 between the two detecting sensors 230 detecting the wafers can be controlled to move towards the direction close to the center of the centering table 210, and the other two centering claws 220 move towards the direction away from the center of the centering table 210, so as to transfer the wafers to the center of the centering table 210, when all the three detecting sensors 230 detect the wafers (the diameter of the circle formed between the three detecting sensors 230 is equal to the diameter of the wafers), the concentricity of the wafers and the centering table 210 can be determined, so that the center of the wafers can be positioned, and the second mechanical hand can accurately transfer the wafers to be processed from the centering table 210 to the grinding table 330, the wafer is placed concentrically with the polishing table 330; in other embodiments, it is also possible that only one detecting sensor 230 detects the wafer in the initial state, and the other two sensors cannot detect the wafer, so that two adjacent centering claws 220 of the detected wafer can be controlled to move toward the center of the centering table 210, and the position of the wafer on the centering table 210 can be adjusted; it should be noted that the centering mechanism further includes a control assembly, which may be of a design conventional in the industry, the control assembly typically includes a programmable controller, and the three detection sensors 230 and the three driving assemblies are all electrically connected to the control assembly.
In some embodiments, referring to fig. 1 to 3, the base 310 is provided with a first rotary driving mechanism 338 at a position corresponding to the rough grinding assembly 340 and the fine grinding assembly 350, the first rotary driving mechanism 338 is detachably connected to the grinding table 330, and the first rotary driving mechanism 338 is used for driving the grinding table 330 to rotate; specifically, the grinding table 330 includes an annular fixed plate 331, a rotating plate 332 disposed at the bottom of the fixed plate 331, and a grinding plate 333 fixedly connected to the rotating plate 332, a connecting shaft 337 is disposed at the bottom of the rotating plate 332, the connecting shaft 337 is in clutch connection with the output end of the first rotating mechanism 338, that is, when the connecting shaft 337 is separated from the output end of the first rotating mechanism 338, the grinding table 330 can rotate to the next station along the circumferential direction of the base 310 to avoid interference between the grinding table 330 and the first rotating mechanism 338, specifically, the connecting shaft 337 and the first rotating mechanism 338 can be connected by a coupling, the coupling can move up and down along the connecting shaft 337 or the output end of the first rotating mechanism 338 to realize separation and connection between the connecting shaft 337 and the first rotating mechanism 338, and further, a conventional clutch can be further provided, thereby realizing clutch connection; in other embodiments, the base 310 is provided with a rotating disc 320 and a rotating motor for driving the rotating disc 320 to rotate, three grinding tables 330 are circumferentially arranged on the rotating disc 320 and rotate sequentially with the rotation of the rotating disc 320 to the position below the rough grinding assembly 340 or the fine grinding assembly 350, specifically, the grinding tables 330 can translate a distance on the rotating disc 320, that is, the fixing plate 331 is pressed on the rotating disc 320 and a guide wheel is arranged between the fixing plate 331 and the rotating disc 320, and the rotating disc 320 is provided with a limit groove capable of allowing the guide wheel to slide, while the rotating disc 320 is further provided with a first linear driving mechanism for driving the grinding tables 330 to move horizontally, the first linear driving mechanism can be a conventional electric push rod, while the lower end of the connecting shaft 337 is in a semi-circular sleeve shape, and the lower end of the connecting shaft 337 is provided with an internal spline or an external spline, while the output end of the first rotating driving mechanism 338 is provided with an external spline, the first rotation driving mechanism 338 may drive the connecting shaft 337 to rotate to be horizontally movable along the limiting groove, that is, when the first linear driving mechanism drives the polishing table 330 to move along the limiting groove in the direction away from the first rotational driving mechanism 338, the connecting shaft 337 can be horizontally separated from the output end of the rotary drive without interference, thereby enabling the grinding table 330 to rotate with the turntable 320 to the next station, such as when the grinding table 330 is separated from the first rotary drive mechanism 338 under the rough grinding assembly 340, to move with the turntable 320 to the finish grinding assembly 350, the grinding table 330 can be driven by the first linear driving mechanism to move along the limiting groove to the direction close to the first rotary driving mechanism 338 until the connecting shaft 337 is stably engaged with the output end of the first rotary driving mechanism 338, and the guide wheel is positioned at one end of the limiting groove, so that the grinding table 330 and the turntable 320 can be ensured to be relatively fixed during operation; it should be noted that the first rotary driving mechanism 338 of all the above embodiments may be a conventional servo motor.
The polishing plate 333 is provided with a plurality of negative pressure holes 334, the polishing plate 333 is covered on the fixing plate 331 and forms a negative pressure cavity 335 with the fixing plate 331, the negative pressure cavity 335 is externally connected with a negative pressure pipe 336, in this embodiment, the negative pressure pipe 336 is an air suction pipe, the second mechanical hand places the centered wafer to be processed on the polishing table 330, and the negative pressure pipe 336 forms a negative pressure cavity 335 between the polishing plate 333 and the fixing plate 331 and tightly adsorbs the wafer to be processed on the polishing plate 333 through the negative pressure holes 334, so that the influence on the polishing precision caused by the relative movement of the wafer and the polishing plate 333 in the polishing operation is avoided.
In some embodiments, referring to fig. 1, the rough grinding assembly 340 and/or the fine grinding assembly 350 are fixed above the base 310, in this embodiment, the rough grinding assembly 340 and the fine grinding assembly 350 have substantially the same structure, and the difference is that the number of grinding sheets is different, specifically, the rough grinding assembly 340 or the fine grinding assembly 350 includes a frame 341 and a grinding head 342 disposed on the frame 341, the frame 341 is connected with a vertical driving mechanism, and the grinding head 342 is connected with a rotating main shaft 343.
In some embodiments, referring to fig. 3, the polishing head 342 is obliquely disposed, and is aimed at that the polishing head 342 is in point contact with the wafer, so as to improve the polishing stability, ensure the polishing quality, and avoid the problem of scorching or breaking on the outer surface of the wafer, while the wafer rotates along with the polishing table 330, the polishing head 342 rotates by being driven by the rotation spindle 343, the polishing head 342 and the wafer move relatively to form an arc-shaped polishing trace on the surface of the wafer, and the rotation speed of the polishing head 342 is different from the rotation speed of the wafer, so as to form an elliptical arc-shaped polishing trace on the surface of the wafer; specifically, an inclined mounting hole may be formed in the frame 341, and the polishing head 342 passes through the inclined mounting hole and moves along the inclined mounting hole to approach or separate from the polishing table 330, so as to avoid a change in the inclination angle of the polishing head 342 relative to the polishing table 330 during use, it should be noted that the polishing head 342 is further connected with a second linear driving mechanism, which may be an electric push rod, and the polishing head 342 moves in the inclined mounting hole to approach or separate from the polishing table 330 through the second linear driving mechanism; in other embodiments, the polishing head 342 may be connected to a six-axis robot, and the six-axis robot can perform polishing at a specific tilt angle, which is flexible and suitable for wafers with different requirements.
In other embodiments, referring to fig. 3, the rotating main shaft 343 is a hollow shaft member, the inner wall of the rotating main shaft 343 is provided with a first magnet 344, the grinding head 342 is connected with a rotating driven shaft 345, the outer wall of the rotating driven shaft 345 is provided with a second magnet 348 matched with the first magnet 344, one end of the rotating driven shaft 345 passes through the aerostatic bearing and is accommodated in the rotating main shaft 343, while the rotating driven shaft 345 is not in contact with the rotating main shaft 343, the end of the aerostatic bearing is provided with at least one tilt adjusting mechanism 347, the tilt adjusting mechanism 347 may be a conventional electric push cylinder, the electric push cylinder is arranged vertically downwards and pulls the aerostatic bearing to tilt towards one direction, so as to realize that the grinding head 342 tilts a certain angle relative to the horizontally arranged grinding table 330, specifically, three or four tilt adjusting mechanisms 347 are uniformly distributed along the circumference of the aerostatic bearing, the purpose of this is to ensure that the polishing head 342 can tilt in any direction relative to the horizontal plane; it should be noted that the rotating main shaft 343 may be connected to a second rotating driving mechanism through a belt, or may be connected to the second rotating driving mechanism through gear engagement, and the second rotating driving mechanism may be a conventional servo motor, and the second rotating driving mechanism drives the rotating main shaft 343 to rotate, and the rotating main shaft 343 transmits torque through magnetic force between the first magnet portion 344 and the second magnet portion 348, so as to drive the grinding head 342 to rotate, and the rotating driven shaft 345 is disposed in the rotating main shaft 343 and is not in contact with the rotating main shaft 343, so as to ensure that the rotating driven shaft 345 can be disposed obliquely with respect to the rotating main shaft 343.
In other embodiments, referring to fig. 3, the static pressure gas includes a bearing housing 3461 and a hollow shaft 3462 disposed inside the bearing housing 3461, the hollow shaft 3462 is sleeved on the rotation driven shaft 345, and a thrust plate 3463 is disposed on an upper end surface of the bearing housing 3461, and a tilt adjusting mechanism 347 is connected to the thrust plate 3463 and pushes the static pressure gas bearing to tilt in a certain direction, specifically, the hollow shaft 3462 is disposed inside the bearing housing 3461 and can rotate relative to the bearing housing 3461, i.e., balls or balls may be disposed between the hollow shaft 3462 and the bearing housing 3461, and the tilt adjusting mechanism drives the static pressure gas bearing to contact through the hollow shaft 3462 and drives the rotation driven shaft 345 to tilt when the static pressure gas bearing tilts, and at this time, the hollow shaft 3462 can rotate along with the rotation driven shaft.
In some embodiments, the polishing head 342 includes a disk-shaped body and a polishing portion disposed on an outer edge of the body, so that the wafer polishing apparatus of the present invention can reduce the manufacturing cost of the polishing head 342 and thus reduce the production cost, in which the outer edge of the polishing head 342 contacts the wafer to perform the polishing operation, the polishing portion can be made of a polishing material, the body can be made of a metal sheet or other hard alloy, and the polishing head 342 is used as a consumable material.
In some embodiments, referring to fig. 4, a baffle 440 is disposed on the peripheral side of the cleaning table 420, a water spray gun 430 is disposed on the inner wall of the baffle 440 and faces the center of the cleaning table 420, for the purpose of preventing the cleaning water from splashing to pollute the workshop environment, and the water spray gun 430 faces the center of the cleaning table 420 to ensure that the sprayed cleaning water flies out from the center of the wafer to the outer edge by centrifugal force, so as to completely clean the surface of the wafer; it should be noted that the wafer and the cleaning table 420 may be fixed by the adsorption force of water, or the cleaning table 420 may be provided with a plurality of adsorption holes, so that the wafer is adsorbed and fixed on the cleaning table 420.
A wafer polishing method, as shown in fig. 5 and 6, the polishing method comprises the following steps:
centering, the first robot 120 places the wafer to be processed on the centering table 210 and is supported by three centering claws 220, at this time, at least two detection sensors 230 can detect the lower end surface of the wafer, and can compare the distance values detected by the two detection sensors 230 to adjust the centering claws 220 to be close to or away from the center of the centering table 210, so as to ensure that the distance values detected by the two detection sensors 230 are the same, thereby determining that the wafer to be processed is placed horizontally, if the distance detected by one of the detection sensors 230 is greater than the distance detected by the other detection sensor 230, the centering claw 220 between the two detection sensors 230 moves towards the direction away from the center of the centering table 210, and the other two centering claws 220 can move towards the direction close to the center of the circle, it should be noted that the thrust of the electric push rod connected to the centering claws 220 can be as small as possible, so as to push the centering claw 220 to move, thereby preventing the centering claw 220 from damaging the wafer, while in other embodiments, a pressure sensor is disposed on the centering claw 220, and the pressure applied to the wafer by the centering claw 220 is detected by the pressure sensor, thereby preventing the centering claw 220 from damaging the wafer; the three centering claws 220 are further linked to the condition that all the three detecting sensors 230 can detect the lower end surface of the wafer or none of the three detecting sensors 230 can detect the lower end surface of the wafer, so as to determine that the wafer is concentric with the centering table 210, for example, if two of the detecting sensors 230 detect the wafer and the other detecting sensor 230 cannot detect the wafer, the centering claw 220 between the two detecting sensors 230 which detect the wafer can be controlled to move towards the direction close to the center of the centering table 210, and the other two centering claws 220 move towards the direction far from the circle of the centering table 210, so as to move the wafer to the center of the centering table 210, when all the three detecting sensors 230 detect the wafer (the diameter of the circle formed between the three detecting sensors 230 is equal to the diameter of the wafer) or when none of the three detecting sensors 230 detect the wafer (the diameter of the circle formed between the three detecting sensors 230 is slightly larger than the diameter of the wafer), the concentricity of the wafer and the centering table 210 can be determined, and the circle center of the wafer can be positioned, so that the wafer and the grinding table 330 can be concentrically placed when the second mechanical hand can accurately transfer the wafer to be processed from the centering table 210 to the grinding table 330; in other embodiments, it is also possible that only one detecting sensor 230 detects the wafer in the initial state, and the other two sensors cannot detect the wafer, so that two adjacent centering claws 220 of the detected wafer can be controlled to move toward the center of the centering table 210, and the position of the wafer on the centering table 210 can be adjusted.
Roughly grinding, the second robot arm places the centered wafer to be processed on one of the grinding tables 330, it should be noted that the circle center of the grinding table 330 is fixed and known in the initial state, so that after the center of the wafer is measured by the centering mechanism, the wafer can be transferred to the concentric position of the grinding table 330 by the second robot arm, and the grinding head 342 on the rough grinding assembly 340 is inclined at a certain angle relative to the grinding table 330, so that the grinding head 342 forms a rough grinding trace 101 from the point C to the point B on the surface of the wafer, in this step, the wafer rotates along with the grinding table 330, the grinding head 342 rotates by the driving of the rotating main shaft 343, the grinding head 342 and the wafer move relatively, so as to form an arc grinding trace 342 on the surface of the wafer, and the rotation speed of the grinding head is different from the rotation speed of the wafer, so that an elliptical arc-shaped grinding trace can be formed on the surface, for convenience of description in this embodiment, each portion of the wafer may be divided into a first quadrant, a second quadrant, a third quadrant, and a fourth quadrant by dividing the center of the circle counterclockwise, and in the rough grinding step, the polishing head 342 contacts the fourth quadrant of the wafer, so that the elliptical rough grinding trace 101 may be formed on the surface of the wafer clockwise.
In this step, the wafer rotates with the grinding table 330, the grinding head 342 and the wafer move relatively to each other to form an arc-shaped grinding trace on the surface of the wafer, and the rotation speed of the grinding head 342 is different from that of the wafer, so that an elliptical arc-shaped grinding trace can be formed on the surface of the wafer, it should be noted that, in order to form the BA arc-shaped grinding trace 102, the grinding head 342 on the grinding assembly 350 contacts with the first quadrant of the wafer, so that the elliptical grinding trace 102 can be formed on the surface of the wafer in a counterclockwise direction; the grinding method of the invention ensures that the grinding trace of rough grinding is opposite to the grinding trace of accurate grinding, and aims to realize the processing quality of high-precision, high-efficiency, nondestructive and ultra-smooth surface of the thinned wafer.
Cleaning, wherein the wafer after fine grinding is sucked by the third mechanical arm and transferred to the cleaning table 420, and the abrasive dust attached to the lower surface of the wafer can be blown off by the blowing-off assembly above the blowing-off assembly in the transfer process, so that the problem that the wafer cannot be fixed on the cleaning table 420 due to tilting of the wafer relative to the cleaning table 420, and the wafer falls out in the cleaning and centrifugal drying processes to damage the wafer or equipment is solved; in this process, the water spray gun 430 sprays toward the center of the wafer and the wafer is rotated with the cleaning table 420 all the time, so that the abrasive dusts adhered to the wafer are removed by centrifugal action with the cleaning water, the cleaning efficiency and the cleaning effect are improved, and the rotation rate of the cleaning table 420 can be increased in the spin-drying process, thereby ensuring that the moisture adhered to the wafer can be spin-dried.
In the above embodiment, the rough grinding assembly 340 and the fine grinding assembly 350 operate on the same principle and structure, and the two are different only in the inclination direction and inclination angle of the grinding head 342 relative to the grinding table 330, the mesh number of the grinding head 342, the rotation speed of the grinding head 342, and the rotation speed of the grinding table 330.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.

Claims (10)

1. The utility model provides a wafer grinder, its characterized in that includes last unloading mechanism, centering mechanism, grinding mechanism and the wiper mechanism that sets gradually along the technological process direction of wafer, wherein:
the feeding and discharging mechanism comprises a material table and a first mechanical arm, and the first mechanical arm is used for transferring a wafer to be processed to the centering mechanism and transferring the processed wafer from the cleaning mechanism to the material table;
the centering mechanism comprises a centering table and three centering claws arranged on the centering table along the circumferential direction, the centering claws are connected with a driving assembly, and the driving assembly is used for driving the centering claws to move towards the direction far away from or close to the circle center of the centering table;
the grinding mechanism comprises a base and three grinding tables arranged on the base, a coarse grinding assembly and a fine grinding assembly are further arranged above the base, and the three grinding tables can sequentially rotate to the positions below the coarse grinding assembly and the fine grinding assembly;
the cleaning mechanism comprises a cleaning table and a blowing assembly arranged on one side of the grinding mechanism, the blowing assembly is arranged from bottom to top, the cleaning table is connected with a rotation driving assembly, and water spray guns are arranged on the periphery of the cleaning table.
2. The wafer polishing apparatus as set forth in claim 1, wherein three centering claws are uniformly distributed in a circumferential direction of the centering table, and a detection sensor is provided on the centering table at a position between two adjacent centering claws.
3. A wafer grinding apparatus as recited in claim 1, wherein a first rotary drive mechanism is provided on the base at a position corresponding to each of the rough grinding assembly and the fine grinding assembly, the first rotary drive mechanism being detachably connected to the grinding table.
4. The wafer polishing apparatus as claimed in claim 3, wherein the polishing table comprises an annular fixing plate, a rotating plate disposed at the bottom of the fixing plate, and a polishing plate fixedly connected to the rotating plate, the polishing plate has a plurality of negative pressure holes, the polishing plate is covered on the fixing plate and forms a negative pressure chamber with the fixing plate, and the negative pressure chamber is externally connected to a negative pressure tube.
5. The wafer polishing apparatus as set forth in claim 1 wherein the polishing mechanism further comprises a turntable, three polishing tables being uniformly distributed on the turntable in a circumferential direction, the turntable rotating to drive the polishing tables to rotate below the rough polishing assembly or the fine polishing assembly.
6. The wafer grinding apparatus of claim 1 wherein the rough grinding assembly and/or the finish grinding assembly includes a frame and a grinding head disposed on the frame, the frame having a vertical drive mechanism coupled thereto, the grinding head having a rotating spindle coupled thereto.
7. The wafer polishing apparatus as set forth in claim 6 wherein the polishing head is disposed obliquely.
8. The wafer polishing apparatus according to claim 6 or 7, wherein the rotating main shaft is a hollow shaft member, and the inner wall of the rotating main shaft is provided with a first magnet portion, the polishing head is connected with a rotating driven shaft, one end of the rotating driven shaft passes through a static pressure gas bearing and is accommodated in the rotating main shaft, the end of the static pressure gas bearing is provided with at least one tilt adjusting mechanism, and the outer wall of the rotating driven shaft is provided with a second magnet portion which is engaged with the first magnet portion.
9. The wafer polishing apparatus as recited in claim 8, wherein the static pressure gas bearing includes a bearing housing and a hollow shaft disposed inside the bearing housing, the hollow shaft is sleeved on the rotating driven shaft, and a thrust plate is disposed on an upper end surface of the bearing housing and connected to the tilt adjusting mechanism.
10. A wafer grinding method is characterized by comprising the following steps:
centering, namely placing a wafer to be processed on a centering mechanism to measure the center position of the wafer;
roughly grinding, cutting in by the grinding head from a point C of the wafer, cutting out from a point B of the wafer and forming a CB roughly grinding trace on the surface of the wafer;
fine grinding, namely cutting in the grinding head from a point B of the wafer, cutting out the grinding head from a point A of the wafer and forming a BA fine grinding trace on the surface of the wafer;
and cleaning, namely flushing the surface of the wafer with water, and spinning the wafer to spin water stains by centrifugal force.
CN202010911819.9A 2020-09-02 2020-09-02 Wafer grinding device and grinding method Pending CN112008595A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010911819.9A CN112008595A (en) 2020-09-02 2020-09-02 Wafer grinding device and grinding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010911819.9A CN112008595A (en) 2020-09-02 2020-09-02 Wafer grinding device and grinding method

Publications (1)

Publication Number Publication Date
CN112008595A true CN112008595A (en) 2020-12-01

Family

ID=73516505

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010911819.9A Pending CN112008595A (en) 2020-09-02 2020-09-02 Wafer grinding device and grinding method

Country Status (1)

Country Link
CN (1) CN112008595A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112720120A (en) * 2020-12-23 2021-04-30 有研半导体材料有限公司 Device and method for precision grinding of 12-inch silicon wafer
CN114193318A (en) * 2021-12-15 2022-03-18 华侨大学 Sapphire substrate grinding automatic feeding and discharging production line and control method thereof
CN114346800A (en) * 2022-01-10 2022-04-15 合肥微睿光电科技有限公司 Surface grinding method, workpiece, deposition apparatus and grinding station
CN114474440A (en) * 2022-03-16 2022-05-13 江苏京创先进电子科技有限公司 Method for controlling adjustment precision of fine adjustment device
CN114582713A (en) * 2022-03-11 2022-06-03 江苏京创先进电子科技有限公司 Wafer processing method and wafer processing apparatus
CN114639601A (en) * 2022-02-17 2022-06-17 中环领先半导体材料有限公司 Novel process for improving utilization rate of thinning machine
CN115383618A (en) * 2022-08-25 2022-11-25 深圳市长盈精密技术股份有限公司 Ultrasonic thinning equipment for wafer
CN115723035A (en) * 2022-09-08 2023-03-03 西安奕斯伟材料科技有限公司 System and method for monitoring processing state of grinding device and double-sided grinding device
CN115972078A (en) * 2022-12-27 2023-04-18 西安奕斯伟材料科技股份有限公司 Device and method for double-sided grinding of silicon wafer
WO2023095669A1 (en) * 2021-11-29 2023-06-01 東京エレクトロン株式会社 Substrate processing method and substrate processing system
CN117001448A (en) * 2023-10-07 2023-11-07 通威微电子有限公司 Grinding device and control method thereof
CN117047636A (en) * 2022-11-28 2023-11-14 东莞市雕润数控科技有限公司 Semiconductor wafer thinning polisher

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1170655A (en) * 1996-05-31 1998-01-21 Memc电子材料有限公司 Automated wafer lapping system
US20020173229A1 (en) * 2001-05-21 2002-11-21 Tokyo Seimitsu Co. Ltd. Wafer planarization apparatus
JP2010005717A (en) * 2008-06-25 2010-01-14 Disco Abrasive Syst Ltd Machining apparatus
CN101811273A (en) * 2009-02-25 2010-08-25 株式会社迪思科 Work piece processing method and Work treatment installation
CN102049730A (en) * 2010-12-29 2011-05-11 清华大学 Wafer replacing device used in chemical mechanical polishing equipment
CN103692307A (en) * 2013-12-16 2014-04-02 广东凌丰集团股份有限公司 Metal disc automatic feeding edging cleaning stacking device
CN103846781A (en) * 2012-12-04 2014-06-11 不二越机械工业株式会社 Wafer polishing apparatus
CN109590705A (en) * 2018-12-26 2019-04-09 上海福赛特机器人有限公司 A kind of wafer automatic assembling apparatus and automatic assembly method
CN110962022A (en) * 2019-12-31 2020-04-07 浙江芯晖装备技术有限公司 Polishing equipment
CN111065488A (en) * 2017-09-13 2020-04-24 佳能半导体制造设备股份有限公司 Processing device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1170655A (en) * 1996-05-31 1998-01-21 Memc电子材料有限公司 Automated wafer lapping system
US20020173229A1 (en) * 2001-05-21 2002-11-21 Tokyo Seimitsu Co. Ltd. Wafer planarization apparatus
JP2010005717A (en) * 2008-06-25 2010-01-14 Disco Abrasive Syst Ltd Machining apparatus
CN101811273A (en) * 2009-02-25 2010-08-25 株式会社迪思科 Work piece processing method and Work treatment installation
CN102049730A (en) * 2010-12-29 2011-05-11 清华大学 Wafer replacing device used in chemical mechanical polishing equipment
CN103846781A (en) * 2012-12-04 2014-06-11 不二越机械工业株式会社 Wafer polishing apparatus
CN103692307A (en) * 2013-12-16 2014-04-02 广东凌丰集团股份有限公司 Metal disc automatic feeding edging cleaning stacking device
CN111065488A (en) * 2017-09-13 2020-04-24 佳能半导体制造设备股份有限公司 Processing device
CN109590705A (en) * 2018-12-26 2019-04-09 上海福赛特机器人有限公司 A kind of wafer automatic assembling apparatus and automatic assembly method
CN110962022A (en) * 2019-12-31 2020-04-07 浙江芯晖装备技术有限公司 Polishing equipment

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112720120A (en) * 2020-12-23 2021-04-30 有研半导体材料有限公司 Device and method for precision grinding of 12-inch silicon wafer
WO2023095669A1 (en) * 2021-11-29 2023-06-01 東京エレクトロン株式会社 Substrate processing method and substrate processing system
CN114193318B (en) * 2021-12-15 2022-12-27 华侨大学 Sapphire substrate grinding automatic feeding and discharging production line and control method thereof
CN114193318A (en) * 2021-12-15 2022-03-18 华侨大学 Sapphire substrate grinding automatic feeding and discharging production line and control method thereof
CN114346800A (en) * 2022-01-10 2022-04-15 合肥微睿光电科技有限公司 Surface grinding method, workpiece, deposition apparatus and grinding station
CN114639601A (en) * 2022-02-17 2022-06-17 中环领先半导体材料有限公司 Novel process for improving utilization rate of thinning machine
CN114639601B (en) * 2022-02-17 2023-04-28 中环领先半导体材料有限公司 Novel process for improving utilization rate of thinning machine
CN114582713A (en) * 2022-03-11 2022-06-03 江苏京创先进电子科技有限公司 Wafer processing method and wafer processing apparatus
CN114582713B (en) * 2022-03-11 2023-01-24 江苏京创先进电子科技有限公司 Wafer processing method and wafer processing apparatus
CN114474440B (en) * 2022-03-16 2023-03-10 江苏京创先进电子科技有限公司 Method for controlling adjustment precision of fine adjustment device
CN114474440A (en) * 2022-03-16 2022-05-13 江苏京创先进电子科技有限公司 Method for controlling adjustment precision of fine adjustment device
CN115383618A (en) * 2022-08-25 2022-11-25 深圳市长盈精密技术股份有限公司 Ultrasonic thinning equipment for wafer
CN115723035A (en) * 2022-09-08 2023-03-03 西安奕斯伟材料科技有限公司 System and method for monitoring processing state of grinding device and double-sided grinding device
CN115723035B (en) * 2022-09-08 2024-05-28 西安奕斯伟材料科技股份有限公司 System, method and double-sided grinding device for monitoring processing state of grinding device
CN117047636A (en) * 2022-11-28 2023-11-14 东莞市雕润数控科技有限公司 Semiconductor wafer thinning polisher
CN115972078A (en) * 2022-12-27 2023-04-18 西安奕斯伟材料科技股份有限公司 Device and method for double-sided grinding of silicon wafer
CN117001448A (en) * 2023-10-07 2023-11-07 通威微电子有限公司 Grinding device and control method thereof

Similar Documents

Publication Publication Date Title
CN112008595A (en) Wafer grinding device and grinding method
JP5025200B2 (en) Thickness measurement method during grinding
CN114211329B (en) Be applied to two-sided attenuate equipment of hard and brittle sheet material
CN111421412B (en) Grinding workbench and wafer thinning equipment
JPH0615565A (en) Automatic wafer lapping machine
KR101755177B1 (en) Chemical mechanical polisher with hub arms mounted
JP5025297B2 (en) Processing equipment
JP2001135604A (en) Polishing apparatus
CN115338717A (en) Wafer thinning equipment
TWI785206B (en) Grinding device
JP2019055441A (en) Substrate treatment apparatus, substrate processing method and storage medium
KR101851383B1 (en) Semiconductor wafer grinder with the same
JP2002009021A (en) Polishing device
JP2009061568A (en) Tray for processing tabular article and processing device
JP4966069B2 (en) Processing equipment
US8915771B2 (en) Method and apparatus for cleaning grinding work chuck using a vacuum
JP2005523579A (en) Method and apparatus for chemical mechanical polishing a workpiece
CN110153859A (en) A kind of Full-automatic grinder
JPH0457469B2 (en)
CN212886986U (en) Wafer grinding mechanism
JP7320428B2 (en) processing equipment
JP4824883B2 (en) Substrate polishing apparatus and substrate polishing / cleaning / drying method
TWI687990B (en) Semiconductor strip grinder
JP5508114B2 (en) Grinding equipment
CN212625510U (en) Cleaning mechanism and grinding machine

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination