CN111978858A - 一种半导体石墨晶圆及其制备方法 - Google Patents
一种半导体石墨晶圆及其制备方法 Download PDFInfo
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Abstract
本发明属于石墨晶圆制备领域,尤其是一种半导体石墨晶圆及其制备方法,针对现有的半导体石墨晶圆的耐磨、抗划伤性能差的问题,现提出如下方案,其包括以下重量份的原料:氧化石墨烯10‑20份、乙醇20‑30份、硅晶圆、有机硅油1‑5份、改性硅铝炭黑1‑5份、聚硅氧烷5‑10份、聚四氟乙烯5‑10份、氮化硅1‑5份、二硫化钼2‑7份、聚硅氧烷3‑8份、聚氨酯丙烯酸酯1‑5份、氮化碳1‑5份、丙烯酸树脂粉末3‑9份,本发明可以提高耐磨性及抗划伤性,制备方法简单。
Description
技术领域
本发明涉及石墨晶圆制备领域,尤其涉及一种半导体石墨晶圆及其制备方法。
背景技术
晶圆是指制作硅半导体积体电路所用的硅晶片,其原始材料是硅。高纯度的多晶硅溶解后掺入硅晶体晶种,然后慢慢拉出,形成圆柱形的单晶硅。硅晶棒在经过研磨,抛光,切片后,形成硅晶圆片,也就是晶圆。目前国内晶圆生产线以8英寸和12英寸为主。晶圆的主要加工方式为片加工和批加工,即同时加工1片或多片晶圆。随着半导体特征尺寸越来越小,加工及测量设备越来越先进,使得晶圆加工出现了新的数据特点。同时,特征尺寸的减小,使得晶圆加工时,空气中的颗粒数对晶圆加工后质量及可靠性的影响增大,而随着洁净的提高,颗粒数也出现了新的数据特点。
现有的半导体石墨晶圆的耐磨、抗划伤性能差,不能满足实际的使用需求,因此我们提出了一种半导体石墨晶圆及其制备方法,用来解决上述问题。
发明内容
本发明的目的是为了解决现有技术中存在半导体石墨晶圆的耐磨、抗划伤性能差的缺点,而提出的一种半导体石墨晶圆及其制备方法。
本发明提出的一种半导体石墨晶圆,包括以下重量份的原料:氧化石墨烯10-20份、乙醇20-30份、硅晶圆、有机硅油1-5份、改性硅铝炭黑1-5份、聚硅氧烷5-10份、聚四氟乙烯5-10份、氮化硅1-5份、二硫化钼2-7份、聚硅氧烷3-8份、聚氨酯丙烯酸酯1-5份、氮化碳1-5份、丙烯酸树脂粉末3-9份。
优选的,包括以下重量份的原料:氧化石墨烯11-19份、乙醇21-29份、硅晶圆、有机硅油2-4份、改性硅铝炭黑2-4份、聚硅氧烷6-9份、聚四氟乙烯6-9份、氮化硅2-4份、二硫化钼3-6份、聚硅氧烷4-7份、聚氨酯丙烯酸酯2-4份、氮化碳2-4份、丙烯酸树脂粉末4-8份。
优选的,包括以下重量份的原料:氧化石墨烯15份、乙醇25份、硅晶圆、有机硅油3份、改性硅铝炭黑3份、聚硅氧烷7份、聚四氟乙烯7份、氮化硅3份、二硫化钼4份、聚硅氧烷5份、聚氨酯丙烯酸酯3份、氮化碳3份、丙烯酸树脂粉末6份。
本发明还提出了一种半导体石墨晶圆的制备方法,包括以下步骤:
S1:将氧化石墨烯加入到乙醇中,配制成浓度0.05-10mg/ml的乙醇溶液;
S2:然后将有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼放进混合设备内进行搅拌混合,制得第一混合物;
S3:将聚硅氧烷、聚氨酯丙烯酸酯、氮化碳、丙烯酸树脂粉末加入到第一混合物中搅拌混合,制得第二混合物;
S4:将第二混合物与乙醇溶液搅拌混合,制得第三混合物;
S5:将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中恒温热处理,得到半导体石墨晶圆。
优选的,所述S1中,将氧化石墨烯加入到乙醇中,配制成浓度5mg/ml的乙醇溶液。
优选的,所述S2中,将有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼放进混合设备内进行搅拌混合,搅拌速度为300-500r/min,搅拌时间为10-15min,制得第一混合物。
优选的,所述S3中,将聚硅氧烷、聚氨酯丙烯酸酯、氮化碳、丙烯酸树脂粉末加入到第一混合物中搅拌混合,搅拌速度为350-550r/min,搅拌时间为15-20min,制得第二混合物。
优选的,所述S4中,将第二混合物与乙醇溶液搅拌混合,搅拌速度为400-600r/min,搅拌时间为20-25min制得第三混合物。
优选的,所述S5中,将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中恒温热处理,气氛炉的气氛为氢气,得到半导体石墨晶圆。
优选的,所述S5中,将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中,于200-500°C的温度下恒温热处理40-60min,得到半导体石墨晶圆。
有机硅油:一般都是二甲基硅油。它是是一种不同聚合度链状结构的聚有机硅氧烷。它是由二甲基二氯硅烷加水水解制得初缩聚环体,环体经裂解、精馏制得低环体,然后把环体、封头剂、催化剂放在一起调聚就可得到各种不同聚合度的混合物,经减压蒸馏除去低沸物就可制得硅油。最常用的硅油,有机基团全部为甲基,称甲基硅油。有机基团也可以采用其它有机基团代替部分甲基基团,以改进硅油的某种性能和适用各种不同的用途。常见的其它基团有氢、乙基、苯基、氯苯基、三氟丙基等。
硅铝炭黑:煤研石为原料,经过机械粉碎、焙烧等处理得到的一种既含无机物也含有机物的填料。
聚硅氧烷:是一类以重复的Si-O键为主链,硅原子上直接连接有机基团的聚合物,其中,R代表有机基团,如甲基,苯基等;n为硅原子上连接的有机基团数目(1~3之间);m为聚合度(m不小于2);
聚四氟乙烯,为以四氟乙烯作为单体聚合制得的聚合物。白色蜡状、半透明、耐热、耐寒性优良,可在-180~260ºC长期使用。这种材料具有抗酸抗碱、抗各种有机溶剂的特点,几乎不溶于所有的溶剂。同时,聚四氟乙烯具有耐高温的特点,它的摩擦系数极低,所以可作润滑作用之余,亦成为了易清洁水管内层的理想涂料;
氮化硅是一种重要的结构陶瓷材料。它是一种超硬物质,本身具有润滑性,并且耐磨损,为原子晶体;高温时抗氧化。而且它还能抵抗冷热冲击,在空气中加热到1000℃以上,急剧冷却再急剧加热,也不会碎裂。正是由于氮化硅陶瓷具有如此优异的特性,人们常常利用它来制造轴承、气轮机叶片、机械密封环、永久性模具等机械构件。如果用耐高温而且不易传热的氮化硅陶瓷来制造发动机部件的受热面,不仅可以提高柴油机质量,节省燃料,而且能够提高热效率。我国及美国、日本等国家都已研制出了这种柴油机;
二硫化钼是辉钼矿的主要成分。黑色固体粉末,有金属光泽。化学式MoS2,熔点1185℃,密度4.80g/cm³(14℃),莫氏硬度1.0~1.5;
聚氨酯丙烯酸酯(PUA)的分子中含有丙烯酸官能团和氨基甲酸酯键,固化后的胶黏剂具有聚氨酯的高耐磨性、粘附力、柔韧性、高剥离强度和优良的耐低温性能以及聚丙烯酸酯卓越的光学性能和耐候性,是一种综合性能优良的辐射固化材料;
丙烯酸树脂是丙烯酸、甲基丙烯酸及其衍生物聚合物的总称。丙烯酸树脂涂料就是以(甲基)丙烯酸酯、苯乙烯为主体,同其他丙烯酸酯共聚所得丙烯酸树脂制得的热塑性或热固性树脂涂料,或丙烯酸辐射涂料;
本发明的有益效果是:
通过有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼的相互配合,可以提高半导体石墨晶圆的硬度及耐磨性能,同时在耐热、耐氧化性能方面具有明显提高;
通过聚氨酯丙烯酸酯、氮化碳和丙烯酸树脂粉末的配合使用,可以提高半导体石墨晶圆的耐磨性及抗划伤性能;
本发明可以提高耐磨性及抗划伤性,制备方法简单。
具体实施方式
下面结合具体实施例对本发明作进一步解说。
实施例一
本发明提出了一种半导体石墨晶圆,包括以下重量份的原料:氧化石墨烯10份、乙醇20份、硅晶圆、有机硅油1份、改性硅铝炭黑1份、聚硅氧烷5份、聚四氟乙烯5份、氮化硅1份、二硫化钼2份、聚氨酯丙烯酸酯1份、氮化碳1份、丙烯酸树脂粉末3份;
其制备方法包括以下步骤:
S1:将氧化石墨烯加入到乙醇中,配制成浓度0.05mg/ml的乙醇溶液;
S2:然后将有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼放进混合设备内进行搅拌混合,搅拌速度为300r/min,搅拌时间为10min,制得第一混合物;
S3:将聚氨酯丙烯酸酯、氮化碳、丙烯酸树脂粉末加入到第一混合物中搅拌混合,搅拌速度为350r/min,搅拌时间为15min,制得第二混合物;
S4:将第二混合物与乙醇溶液搅拌混合,搅拌速度为400r/min,搅拌时间为20min,制得第三混合物;
S5:将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中,于200°C的温度下恒温热处理40min,得到半导体石墨晶圆。
实施例二
本发明提出了一种半导体石墨晶圆,包括以下重量份的原料:氧化石墨烯15份、乙醇25份、硅晶圆、有机硅油3份、改性硅铝炭黑3份、聚硅氧烷7份、聚四氟乙烯7份、氮化硅3份、二硫化钼5份、聚氨酯丙烯酸酯3份、氮化碳3份、丙烯酸树脂粉末6份;
其制备方法包括以下步骤:
S1:将氧化石墨烯加入到乙醇中,配制成浓度5mg/ml的乙醇溶液;
S2:然后将有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼放进混合设备内进行搅拌混合,搅拌速度为350r/min,搅拌时间为12min,制得第一混合物;
S3:将聚氨酯丙烯酸酯、氮化碳、丙烯酸树脂粉末加入到第一混合物中搅拌混合,搅拌速度为400r/min,搅拌时间为17min,制得第二混合物;
S4:将第二混合物与乙醇溶液搅拌混合,搅拌速度为500r/min,搅拌时间为22min,制得第三混合物;
S5:将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中,于350°C的温度下恒温热处理50min,得到半导体石墨晶圆。
实施例三
本发明提出了一种半导体石墨晶圆,包括以下重量份的原料:氧化石墨烯20份、乙醇30份、硅晶圆、有机硅油5份、改性硅铝炭黑5份、聚硅氧烷10份、聚四氟乙烯10份、氮化硅5份、二硫化钼7份、聚氨酯丙烯酸酯5份、氮化碳5份、丙烯酸树脂粉末9份;
其制备方法包括以下步骤:
S1:将氧化石墨烯加入到乙醇中,配制成浓度10mg/ml的乙醇溶液;
S2:然后将有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼放进混合设备内进行搅拌混合,搅拌速度为500r/min,搅拌时间为15min,制得第一混合物;
S3:将聚氨酯丙烯酸酯、氮化碳、丙烯酸树脂粉末加入到第一混合物中搅拌混合,搅拌速度为550r/min,搅拌时间为20min,制得第二混合物;
S4:将第二混合物与乙醇溶液搅拌混合,搅拌速度为600r/min,搅拌时间为25min,制得第三混合物;
S5:将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中,于500°C的温度下恒温热处理60min,得到半导体石墨晶圆。
对实施例一至三制得的半导体石墨晶圆,对比常规的半导体石墨晶圆,实验数据如下表所示:
由上述表格可知,本发明提出的半导体石墨晶圆在耐磨性及抗划伤性能方面具有明显提高,且实施二为最佳实施例。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。
Claims (10)
1.一种半导体石墨晶圆,其特征在于,包括以下重量份的原料:氧化石墨烯10-20份、乙醇20-30份、硅晶圆、有机硅油1-5份、改性硅铝炭黑1-5份、聚硅氧烷5-10份、聚四氟乙烯5-10份、氮化硅1-5份、二硫化钼2-7份、聚氨酯丙烯酸酯1-5份、氮化碳1-5份、丙烯酸树脂粉末3-9份。
2.根据权利要求1所述的一种半导体石墨晶圆,其特征在于,包括以下重量份的原料:氧化石墨烯11-19份、乙醇21-29份、硅晶圆、有机硅油2-4份、改性硅铝炭黑2-4份、聚硅氧烷6-9份、聚四氟乙烯6-9份、氮化硅2-4份、二硫化钼3-6份、聚氨酯丙烯酸酯2-4份、氮化碳2-4份、丙烯酸树脂粉末4-8份。
3.根据权利要求1所述的一种半导体石墨晶圆,其特征在于,包括以下重量份的原料:氧化石墨烯15份、乙醇25份、硅晶圆、有机硅油3份、改性硅铝炭黑3份、聚硅氧烷7份、聚四氟乙烯7份、氮化硅3份、二硫化钼4份、聚氨酯丙烯酸酯3份、氮化碳3份、丙烯酸树脂粉末6份。
4.一种半导体石墨晶圆的制备方法,其特征在于,包括以下步骤:
S1:将氧化石墨烯加入到乙醇中,配制成浓度0.05-10mg/ml的乙醇溶液;
S2:然后将有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼放进混合设备内进行搅拌混合,制得第一混合物;
S3:将聚氨酯丙烯酸酯、氮化碳、丙烯酸树脂粉末加入到第一混合物中搅拌混合,制得第二混合物;
S4:将第二混合物与乙醇溶液搅拌混合,制得第三混合物;
S5:将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中恒温热处理,得到半导体石墨晶圆。
5.根据权利要求4所述的一种半导体石墨晶圆的制备方法,其特征在于,所述S1中,将氧化石墨烯加入到乙醇中,配制成浓度5mg/ml的乙醇溶液。
6.根据权利要求4所述的一种半导体石墨晶圆的制备方法,其特征在于,所述S2中,将有机硅油、改性硅铝炭黑、聚硅氧烷、聚四氟乙烯、氮化硅、二硫化钼放进混合设备内进行搅拌混合,搅拌速度为300-500r/min,搅拌时间为10-15min,制得第一混合物。
7.根据权利要求4所述的一种半导体石墨晶圆的制备方法,其特征在于,所述S3中,将聚氨酯丙烯酸酯、氮化碳、丙烯酸树脂粉末加入到第一混合物中搅拌混合,搅拌速度为350-550r/min,搅拌时间为15-20min,制得第二混合物。
8.根据权利要求4所述的一种半导体石墨晶圆的制备方法,其特征在于,所述S4中,将第二混合物与乙醇溶液搅拌混合,搅拌速度为400-600r/min,搅拌时间为20-25min,制得第三混合物。
9.根据权利要求4所述的一种半导体石墨晶圆的制备方法,其特征在于,所述S5中,将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中恒温热处理,气氛炉的气氛为氢气,得到半导体石墨晶圆。
10.根据权利要求4所述的一种半导体石墨晶圆的制备方法,其特征在于,所述S5中,将第三混合物涂于硅晶圆表面,干燥后置入气氛炉中,于200-500°C的温度下恒温热处理40-60min,得到半导体石墨晶圆。
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