CN111952258A - 半导体装置封装及其制造方法 - Google Patents

半导体装置封装及其制造方法 Download PDF

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CN111952258A
CN111952258A CN201910988187.3A CN201910988187A CN111952258A CN 111952258 A CN111952258 A CN 111952258A CN 201910988187 A CN201910988187 A CN 201910988187A CN 111952258 A CN111952258 A CN 111952258A
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electronic component
conductive plate
semiconductor device
chamber
disposed
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胡逸群
洪志斌
施孟铠
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

一种导热装置包含第一传导板、第二传导板、多个芯体和流体。所述第一传导板具有邻近于所述第一传导板的边缘的第一部分和远离所述边缘的第二部分。所述第二传导板具有邻近于所述第一传导板的边缘的第一部分和远离所述边缘的第二部分。所述第一传导板的所述第一部分和所述第二部分相应地连接到所述第二传导板的所述第一部分和所述第二部分以限定腔室。所述多个芯体安置在所述腔室内。所述流体安置在所述腔室内。

Description

半导体装置封装及其制造方法
技术领域
本发明涉及一种半导体装置封装，且涉及一种包含散热结构的半导体装置封装。
背景技术
半导体行业见证了在一些半导体装置封装中的多种电子组件的集成密度的增长。此增大的集成密度通常对应于半导体装置封装中的增大的功率密度。在一些实施方案中，随着半导体装置封装的功率密度的增长，散热可以变为所期望的。因此，在一些实施方案中可以有用的是提供具有改进的热导率的半导体装置封装。
发明内容
在一些实施例中，导热装置包含第一传导板、第二传导板、多个芯体和流体。第一传导板具有邻近于第一传导板的边缘的第一部分和远离边缘的第二部分。第二传导板具有邻近于第一传导板的边缘的第一部分和远离边缘的第二部分。第一传导板的第一部分和第二部分相应地连接到第二传导板的第一部分和第二部分以限定腔室。多个芯体安置在腔室内。流体安置在腔室内。
在一些实施例中，半导体装置封装包含载体、第一电子组件和导热装置。第一电子组件安置在载体上。第一电组件具有面向载体的有源表面和与有源表面相对的后表面。导热装置具有安置在第一电子组件的后表面上的第一结合表面和安置在载体上并且围绕第一电子组件的腔室。导热装置包括安置在腔室内的多个芯体和安置在腔室内的流体。
在一些实施例中，半导体装置封装包含载体、电子组件和导热装置。电子组件安置在载体上。第一电组件具有面向载体的有源表面和与有源表面相对的后表面。导热装置具有安置在电子组件的后表面上的第一结合表面和安置在载体上并且围绕电子组件的腔室。导热装置包含安置在腔室内的多个芯体和安置在腔室内的流体。在电子组件经配置以操作的情况下，流体的至少一部分蒸发成气体。
附图说明
当结合附图阅读时，从以下详细描述最好地理解本发明的一些实施例的方面。应注意各种结构可能未按比例绘制，且各种结构的尺寸可出于论述的清楚起见任意增大或减小。
图1是根据本发明的一些实施例的导热装置的截面图。
图2是根据本发明的一些实施例的半导体装置封装的截面图。
图3是根据本发明的一些实施例的半导体装置封装的截面图。
图4是根据本发明的一些实施例的半导体装置封装的截面图。
图5是根据本发明的一些实施例的半导体装置封装的截面图。
图6是根据本发明的一些实施例的半导体装置封装的截面图。
图7是根据本发明的一些实施例的半导体装置封装的截面图。
图8是根据本发明的一些实施例的热模块的截面图。
具体实施方式
以下公开内容提供用于实施所提供的标的物的不同特征的许多不同实施例或实例。下文描述组件和布置的具体实例来阐释本发明的某些方面。当然，这些仅是实例且并不意图是限制性的。举例来说，在以下描述中，第一特征在第二特征上方或上的形成可以包含第一特征和第二特征直接接触地形成或安置的实施例，且还可包含额外特征可在第一特征与第二特征之间形成或安置使得第一特征和第二特征可不直接接触的实施例。另外，本发明可能在各个实例中重复参考数字和/或字母。此重复是出于简化和清晰的目的，且本身并不规定所论述的各种实施例和/或配置之间的关系。
除非另外规定，否则例如“上方”、“下方”、“上”、“左”、“右”、“下”、“顶部”、“底部”、“竖直”、“水平”、“侧面”、“高于”、“低于”、“上部”、“在……上”、“在……下”等等的空间描述是相对于图中所示的定向来指示的。应理解，本文中所使用的空间描述仅出于说明的目的，且本文中所描述的结构的实际实施方案可以任何定向或方式在空间上布置，其前提是本发明的实施例的优点是不会因此类布置而有偏差。
图1是根据本发明的一些实施例的导热装置10的截面图。在一些实施例中，导热装置10是蒸气腔室。导热装置10包含传导层101、102、多个芯体110和流体120。
传导层101和102可包含具有高热导率的材料或由具有高热导率的材料形成，例如，钨、铜、铝、镁、镍、金、银、氧化铝、氧化铍，或类似者。在一些实施例中，传导层101和102是金属板(例如，铜板)。在一些实施例中，传导层101连接或接合到传导层102以限定腔室10c。举例来说，传导层101和传导层102的边缘可以密封以限定结合表面10a1。举例来说，传导层101的边缘接触传导层102的边缘。在一些实施例中，在传导层101的中心处或邻近于传导层101的中心的传导层101的一部分以及在传导层102的中心处或邻近于传导层102的中心的传导层102的一部分可以连接或接合到彼此以限定结合表面10a2。举例来说，传导层101的部分接触传导层102的部分。如图1中所示，腔室10c围绕结合表面10a2以限定环路。腔室10c和结合表面10a2可限定凹部10r。在一些实施例中，腔室10c的形状可以取决于不同设计要求而改变。
芯体110安置在腔室10c内。芯体110安置在腔室10c的内表面上或邻近于腔室10c的内表面。如图1中所示，芯体110安置在腔室10c的上表面10c1和下表面10c2上或邻近于腔室10c的上表面10c1和下表面10c2。在其它实施例中，芯体110可以安置在仅腔室10c的上表面10c1和下表面10c2上或邻近于仅腔室10c的上表面10c1和下表面10c2。在其它实施例中，芯体110可以进一步安置在在腔室10c的上表面10c1和下表面10c2之间延伸的横向表面上或邻近于在腔室10c的上表面10c1和下表面10c2之间延伸的横向表面。在一些实施例中，芯体110可以由烧结的粉末、网状物、凹槽或其任何组合形成或包含烧结的粉末、网状物、凹槽或其任何组合。在一些实施例中，芯体110可以形成在腔室10c的内表面上，通过例如烧结、电镀或任何其它合适的半导体制造过程。
流体120(或工作流体)安置在腔室10c内。流体120的材料是基于导热装置10可进行操作的温度(例如，操作温度)选择的。举例来说，流体120经选择使得腔室10c包含高于操作温度范围的蒸气和液体两者。在一些实施例中，流体120可包含例如水或有机溶液，例如，氨水、酒精、乙醇或任何其它合适的材料。
在一些实施例中，流体120是低于操作温度的液体状态。在其它实施例中，取决于不同设计要求流体120可以在低于操作温度的液体状态和气体状态两者中。在操作温度下或高于操作温度，流体120的至少一部分蒸发成气体或蒸气。蒸发的气体从具有相对高温的位置行进到具有相对低温的另一位置，并且随后气体将在具有相对低温的位置经冷却(或冷凝)并且转变为液体(或饱和液体)。饱和液体可从具有相对低温的位置行进到具有相对高温的位置。在一些实施例中，液体可沿芯体110流动并且邻近于芯体110。在芯体110安置在腔室10c的上表面10c1和下表面10c2两者上或邻近于腔室10c的上表面10c1和下表面10c2两者的情况下，液体将在一个方向上沿上表面10c1和下表面10c2并且邻近于上表面10c1和下表面10c2行进，并且蒸气将在相反的方向上在上表面10c1和下表面10c2之间行进。在芯体110仅安置在腔室10c的上表面10c1上或仅邻近于腔室10c的上表面10c1的情况下，液体将在一个方向上沿腔室10c的上表面10c1并且邻近于腔室10c的上表面10c1行进，并且蒸气将在相反的方向上沿腔室10c的下表面10c2并且邻近于腔室10c的下表面10c2行进。
图2说明根据本发明的一些实施例的半导体装置封装2的截面图。半导体装置封装2包含载体、电子组件21、热界面材料(TIM)22和如图1中所示的导热装置10。
载体20可以是例如印刷电路板，例如，纸质铜箔层合物、复合铜箔层合物或聚合物浸渍的玻璃纤维类铜箔层合物。载体20可包含互连结构，例如，再分布层(RDL)或接地元件。在一些实施例中，载体20包含陶瓷材料或金属板。在一些实施例中，载体20可包含衬底，例如，有机衬底或引线框。在一些实施例中，载体20可包含双层衬底，其包含核心层和安置在载体20的上表面和底部表面上的传导材料和/或结构。传导材料和/或结构可包含多个迹线。
电子组件21安置在载体20上。电子组件21具有有源表面和与有源表面相对的后表面。电子组件21的有源表面面向载体20并且通过电触点(例如，传导凸块或铜柱)电连接到载体。电子组件21可以是在其中包含半导体衬底、一或多个集成电路装置和一或多个上覆互连结构的芯片或裸片。集成电路装置可包含例如晶体管等有源装置和/或例如电阻器、电容器、电感器等无源装置，或其组合。
TIM 22安置在电子组件21的后表面上。在一些实施例中，TIM 24接触电子组件21的后表面，这可以为电子组件21提供增强的散热。在一些实施例中，TIM 22可以被焊料或适合于散热的其它材料(例如，导热材料，例如，包含金属的材料)代替。
导热装置10安置在TIM 22上。在一些实施例中，导热装置10的结合表面10a2安置在TIM 22上。在一些实施例中，结合表面10a2的面积等于或大于TIM 22或电子组件21的后表面的面积。导热装置10的传导层102接触TIM 22。导热装置10的腔室10c安置在载体20上并且围绕电子组件21。导热装置10的腔室10c通过粘合层10h(例如，胶或胶带)附接到载体。凹部10r用于容纳电子组件21。在一些实施例中，导热装置10可延伸超出载体20的横向表面。在一些实施例中，散热器(未示出)可以安置在导热装置10上以形成热模块。
在一些实施例中，导热装置10可充当热通量转换器，冷却来自电子组件21的高热通量，并且将其转换为较低热通量。举例来说，当电子组件21能够进行操作时，电子组件21所产生的热量将通过TIM 22传递到导热装置10。邻近于电子组件21的导热装置10的腔室10c的一部分的温度增大以使腔室10c内且邻近于电子组件21的流体120蒸发成气体或蒸气。蒸发的气体从邻近于电子组件21的位置行进到远离电子组件21的另一位置，并且随后气体在远离电子组件21的位置处经冷却(或冷凝)并且转变为液体(或饱和液体)。饱和液体可从远离电子组件21的位置行进到邻近于电子组件21的位置。在一些实施例中，液体可沿芯体110且邻近于芯体110流动，所述芯体安置在腔室10c的上表面10c1和下表面10c2两者上或邻近于腔室10c的上表面10c1和下表面10c2两者，并且蒸气将在腔室10c的上表面10c1和下表面10c2之间行进。
在一些现有半导体装置封装中，铜散热器安置在TIM上以为芯片提供散热。然而，因为铜的热导率K是约400W/mK，所以散热器的散热的有效面积仅是芯片的后表面的面积的1.06倍，这对于具有相对高功率的芯片是不充足的。根据图2中的实施例，在水平方向上(Kxy)导热装置10的腔室10c的热导率是约4000W/mk，并且因此导热装置10的散热的有效面积是约TIM 22或电子组件21的后表面的面积的1.67倍，这将增强电子组件21的热耗散并且增大电子组件21的性能。在一些实施例中，导热装置10的散热的有效面积大于铜散热器的散热的有效面积56％。
在一些实施例中，在TIM 22和电子组件21上方的导热装置10的传导层101和102不是密封的。举例来说，导热装置10的腔室10c安置在TIM 22和电子组件21上。然而，导热装置10的腔室10c的热导率在竖直方向上(Kz)是约65W/mK，这将妨碍在竖直方向上的散热。根据图2中的实施例，在TIM 22和电子组件21上方的导热装置10的传导层101和102是密封的(即，结合表面10a2安置在TIM 22上)，并且结合表面10a2的热导率在竖直方向上是约400W/mK，这将具有更好的散热能力。
图3说明根据本发明的一些实施例的半导体装置封装3的截面图。半导体装置封装3类似于图2中所示的半导体装置封装2，且下文描述其间的差异。
半导体装置封装3进一步包含安置在载体20上的电子组件31。取决于不同设计规范电子组件31可与电子组件21相同或不同。传导层101和传导层102经连接或密封以限定电子组件31上方的结合表面10a3。导热装置10进一步包含凹部10r1以容纳电子组件31。凹部10r1可以由腔室10c和电子组件31上方的结合表面10a3限定。在一些实施例中，半导体装置封装3可包含任何数量的电子组件，并且导热装置10可包含在对应的电子组件上方的多个结合表面。举例来说，半导体装置封装3可包含N个电子组件，并且导热装置10可包含在对应的电子组件上方的N个结合表面，其中N是大于1的整数。
图4说明根据本发明的一些实施例的半导体装置封装4的截面图。半导体装置封装4类似于图2中的半导体装置封装2，且下文描述其间的差异。
在图2中，结合表面10a1低于结合表面10a2。举例来说，结合表面10a1与载体20之间的距离小于结合表面10a2与载体20之间的距离。在图4中，结合表面10a1与结合表面10a2基本上共面。举例来说，结合表面10a1与载体20之间的距离基本上同结合表面10a2与载体20之间的距离相同。
图5说明根据本发明的一些实施例的半导体装置封装5的截面图。半导体装置封装5类似于图2中的半导体装置封装2，且下文描述其间的差异。
半导体装置封装5进一步包含安置在载体20上的封装主体50以覆盖电子组件21。举例来说，封装主体50安置在由结合表面10a2和腔室10c限定的凹部10r内。在一些实施例中，封装主体50包含例如一或多种有机材料(例如，模制化合物、双马来酰亚胺三嗪(BT)、聚酰亚胺(PI)、聚苯并噁唑(PBO)、阻焊剂、味之素堆积膜(ABF)、聚丙烯(PP)、环氧基材料，或其两个或大于两个的组合)、无机材料(例如，硅、玻璃、陶瓷、石英，或其两个或大于两个的组合)、液体膜材料或干燥膜材料，或其两个或大于两个的组合。
图6说明根据本发明的一些实施例的半导体装置封装6的截面图。半导体装置封装6类似于图5中的半导体装置封装5，且下文描述其间的差异。
半导体装置封装6进一步包含安置在导热装置10上的电子组件61。取决于不同设计规范电子组件61可与电子组件21相同或不同。在一些实施例中，导热装置10的结合表面10a2可包含穿透结合表面10a2的多个开口10o。电子组件61通过开口电连接到电子组件21。在一些实施例中，底部填充物61u可以安置在电子组件61的有源表面与导热装置10之间以覆盖电子组件61的有源表面。
图7说明根据本发明的一些实施例的半导体装置封装7的截面图。半导体装置封装7类似于图6中的半导体装置封装6，且下文描述其间的差异。
半导体装置封装7进一步包含安置在导热装置10上的封装主体70以覆盖电子组件61和底部填充物61u。在一些实施例中，封装主体70和封装主体50可包含相同材料。替代地，封装主体70和封装主体50可包含不同材料。
图8说明根据本发明的一些实施例的热模块8的截面图。热模块8包含如图2中所示的半导体装置封装和安置在导热装置10上的散热器80。在一些实施例中，散热器80可以安置在图2到6中说明的半导体装置封装2到6中的任一个的导热装置10上以形成热模块。
如本文中所使用，除非上下文另外明确规定，否则单数术语“一(a/an)”和“所述”可包含多个提及物。
如本文中所使用，术语“传导(conductive)”、“导电(electrically conductive)”和“电导率”是指传送电流的能力。导电材料通常指示对电流流动呈现极少或零对抗的那些材料。电导率的一个量度是西门子(Siemens)/米(S/m)。通常，导电材料是电导率大于近似地104S/m(例如，至少105S/m或至少106S/m)的一种材料。材料的电导率有时可可随温度而变化。除非另外规定，否则材料的电导率是在室温下测量的。
如本文中所使用，术语“近似地”、“基本上”、“实质”和“约”用于描述和解释小的变化。当与事件或情况结合使用时，所述术语可指事件或情况精确地发生的例子以及事件或情况极近似地发生的例子。举例来说，当结合数值使用时，术语可指小于或等于所述数值的±10％的变化范围，如小于或等于±5％、小于或等于±4％、小于或等于±3％、小于或等于±2％、小于或等于±1％、小于或等于±0.5％、小于或等于±0.1％、或小于或等于±0.05％。举例来说，如果两个数值之间的差小于或等于所述值的平均值的±10％(例如，小于或等于±5％、小于或等于±4％、小于或等于±3％、小于或等于±2％、小于或等于±1％、小于或等于±0.5％、小于或等于±0.1％，或小于或等于±0.05％)，那么可认为所述两个数值“基本上”相同或相等。举例来说，“基本上”平行可以指相对于0°的小于或等于±10°的角度变化范围，例如，小于或等于±5°、小于或等于±4°、小于或等于±3°、小于或等于±2°、小于或等于±1°、小于或等于±0.5°、小于或等于±0.1°,或小于或等于±0.05°。举例来说，“基本上”垂直可以指相对于90°的小于或等于±10°的角度变化范围，例如，小于或等于±5°、小于或等于±4°、小于或等于±3°、小于或等于±2°、小于或等于±1°、小于或等于±0.5°、小于或等于±0.1°，或小于或等于±0.05°。
另外，有时在本文中以范围格式呈现量、比率和其它数值。应理解，此范围格式是为了便利和简洁而使用，且应灵活地理解，不仅包含明确地规定为范围限制的数值，而且还包含涵盖于那个范围内的所有个体数值或子范围，如同明确地规定每个数值和子范围一般。
虽然已参考本发明的特定实施例描述并说明本发明，但是这些描述和说明并不限制本发明。所属领域的技术人员应理解，在不脱离如由所附权利要求书定义的本发明的真实精神和范围的情况下，可作出各种改变并且可取代等效物。说明可能未必按比例绘制。归因于制造过程和公差，本发明中的艺术再现与实际设备之间可能存在区别。可能存在未特别说明的本发明的其它实施例。应将本说明书和图式视为说明性而非限制性的。可进行修改，以使特定情况、材料、物质组成、方法或过程适应于本发明的目标、精神和范围。所有此类修改都意图在此所附权利要求书的范围内。虽然本文中所公开的方法已参考按特定次序执行的特定操作加以描述，但应理解，可在不脱离本发明的教示的情况下组合、细分或重新排序这些操作以形成等效方法。相应地，除非本文中特别指示，否则操作的次序和分组并非本发明的限制。

Claims (26)

1.一种导热装置，其包括：
第一传导板，其具有邻近于所述第一传导板的边缘的第一部分和远离所述边缘的第二部分；
第二传导板，其具有邻近于所述第一传导板的边缘的第一部分和远离所述边缘的第二部分，其中所述第一传导板的所述第一部分和所述第二部分相应地连接到所述第二传导板的所述第一部分和所述第二部分以限定腔室；
安置在所述腔室内的多个芯体；以及
安置在所述腔室内的流体。
2.根据权利要求1所述的导热装置，其中
所述腔室具有上表面和与所述上表面相对的下表面；以及
所述芯体安置为邻近于所述腔室的所述上表面和/或所述下表面。
3.根据权利要求1所述的导热装置，其中
所述第一传导板具有在所述第一部分与所述第二部分之间的第三部分；
所述第二传导板具有在所述第一部分与所述第二部分之间的第三部分；以及
所述第一传导板的所述第三部分与所述第二传导板的所述第三部分间隔开。
4.根据权利要求1所述的导热装置，其中
所述第一传导板的所述第二部分连接到所述第二传导板的所述第二部分以限定结合表面；以及
所述腔室围绕所述结合表面。
5.根据权利要求4所述的导热装置，其中所述结合表面和所述腔室限定凹部。
6.根据权利要求1所述的导热装置，其中所述芯体包含烧结粉末、网状物、凹槽，或其任何组合。
7.根据权利要求1所述的导热装置，其中所述流体包含水或有机溶液。
8.一种半导体装置封装，其包括：
载体；
第一电子组件，其安置在所述载体上，所述第一电子组件具有面向所述载体的有源表面和与所述有源表面相对的后表面；以及
导热装置，其具有安置在所述第一电子组件的所述后表面上的第一结合表面和安置在所述载体上并且围绕所述第一电子组件的腔室，
其中所述导热装置包括安置在所述腔室内的多个芯体和安置在所述腔室内的流体。
9.根据权利要求8所述的半导体装置封装，其中所述导热装置包括：
第一传导板，其具有邻近于所述第一传导板的边缘的第一部分和在所述第一电子组件的所述后表面上方的第二部分；
第二传导板，其具有邻近于所述第一传导板的边缘的第一部分和在所述第一电子组件的所述后表面上方的第二部分，
其中所述第一传导板的所述第一部分和所述第二部分相应地连接到所述第二传导板的所述第一部分和所述第二部分以限定所述腔室。
10.根据权利要求9所述的半导体装置封装，其中
所述第一传导板的所述第二部分连接到所述第二传导板的所述第二部分以限定所述第一结合表面；以及
所述第一传导板的所述第一部分连接到所述第二传导板的所述第一部分以限定第二结合表面。
11.根据权利要求10所述的半导体装置封装，其中所述第一结合表面与所述载体之间的距离大于所述第二结合表面与所述载体之间的距离。
12.根据权利要求10所述的半导体装置封装，其中所述第一结合表面与所述载体之间的距离与所述第二结合表面与所述载体之间的距离基本上相同。
13.根据权利要求9所述的半导体装置封装，其中
所述第一传导板具有在所述第一部分与所述第二部分之间的第三部分；
所述第二传导板具有在所述第一部分与所述第二部分之间的第三部分；以及
所述第一传导板的所述第三部分与所述第二传导板的所述第三部分间隔开。
14.根据权利要求8所述的半导体装置封装，其中
所述腔室具有上表面和与所述上表面相对的下表面；以及
所述芯体安置为邻近于所述腔室的所述上表面和/或所述下表面。
15.根据权利要求8所述的半导体装置封装，其进一步包括安置在所述导热装置的所述第一结合表面与所述第一电子组件的所述后表面之间的热界面材料。
16.根据权利要求8所述的半导体装置封装，其中所述导热装置的所述第一结合表面和所述腔室限定凹部以容纳所述第一电子组件。
17.根据权利要求16所述的半导体装置封装，其进一步包括安置在所述凹部内并且覆盖所述第一电子组件的第一封装主体。
18.根据权利要求8所述的半导体装置封装，其进一步包括安置在所述导热装置的所述第一结合表面上的第二电子组件，其中所述导热装置的所述结合表面具有多个开口，并且所述第二电子组件通过所述开口电连接到所述第一电子组件。
19.根据权利要求18所述的半导体装置封装，其进一步包括安置在所述导热装置上并且覆盖所述第二电子组件的第二封装主体。
20.根据权利要求8所述的半导体装置封装，其进一步包括安置在所述导热装置上的散热器。
21.一种半导体装置封装，其包括：
载体；
电子组件，其安置在所述载体上，所述第一电子组件具有面向所述载体的有源表面和与所述有源表面相对的后表面；以及
导热装置，其具有安置在所述电子组件的所述后表面上的第一结合表面和安置在所述载体上并且围绕电子组件的腔室，其中
所述导热装置包括安置在所述腔室内的多个芯体和安置在所述腔室内的流体，以及
在所述电子组件经配置以操作的情况下，所述流体的至少一部分蒸发成气体。
22.根据权利要求21所述的半导体装置封装，其中所述气体从邻近于所述电子组件的所述腔室的第一部分流动到远离所述电子组件的所述腔室的第二部分。
23.根据权利要求22所述的半导体装置封装，所述气体在所述腔室的所述第二部分处冷凝成液体，并且所述液体从所述腔室的所述第二部分流动到所述腔室的所述第一部分。
24.根据权利要求23所述的半导体装置封装，其中所述液体沿所述芯体并且邻近于所述芯体流动。
25.根据权利要求23所述的半导体装置封装，其中所述气体流动远离所述芯体。
26.根据权利要求21所述的半导体装置封装，其中用于所述导热装置的所述散热的有效面积是所述电子组件的所述后表面的面积的约1.67倍。
CN201910988187.3A 2019-05-15 2019-10-17 半导体装置封装及其制造方法 Pending CN111952258A (zh)

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