CN111937130A - 处理腔室窗冷却用系统与装置 - Google Patents

处理腔室窗冷却用系统与装置 Download PDF

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CN111937130A
CN111937130A CN201980024138.6A CN201980024138A CN111937130A CN 111937130 A CN111937130 A CN 111937130A CN 201980024138 A CN201980024138 A CN 201980024138A CN 111937130 A CN111937130 A CN 111937130A
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保罗·E·佩尔甘德
詹姆斯·D·史瑞斯奈
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Abstract

本文中提供用于冷却处理腔室窗的方式。在一些实施例中，一种处理腔室窗冷却用系统可包括用于处理晶片的处理腔室，其中所述处理腔室包括窗。在一些实施例中，所述窗容许来自灯总成的光被递送到晶片。所述系统还包括能够与所述处理腔室一起操作的冷却装置，所述冷却装置用于将气体递送到所述窗。所述冷却装置包括用于支撑所述窗的支撑环。所述支撑环包括周边壁、以及透过所述周边壁形成的多个狭槽。所述多个狭槽可穿过所述窗递送气体(例如，空气)。

Description

处理腔室窗冷却用系统与装置
相关申请的交叉参考
本申请主张2018年4月6日提出申请的美国临时专利申请序列号62/654,281的优先权，所述美国临时专利申请的全部内容并入本文供参考，且本申请主张2018年7月3日提出申请的美国非临时专利申请序列号16/026,640的优先权，所述美国非临时专利申请的全部内容并入本文供参考。
技术领域
本发明实施例涉及处理腔室窗，且更具体来说，涉及用于提供处理腔室窗的冷却的系统及装置。
背景技术
与处理腔室一起使用的灯加热器将来自灯阵列(lamp array)的光透过窗透射到被加热的晶片上。所述窗吸收一些光并将光能转换成窗的温度升高。在重复的灯循环期间，窗温度继续升高，并将能量辐射到被加热的晶片中。所述窗并不是控制回路(controlloop)的一部分，且由于窗可在远离晶片大约1英寸的距离处加热到超过300C，而窗一般不应被加热到高于150C，因此而成为问题。在重复的循环之后，窗温度可使晶片过热。
发明内容
在一个实施例中，一种处理腔室窗冷却用系统可包括用于处理晶片的处理腔室，其中所述处理腔室包括窗。所述系统还可包括能够与所述处理腔室一起操作的冷却装置，所述冷却装置用于将气体递送到所述窗。所述冷却装置可包括用于支撑所述窗的支撑环。所述支撑环可包括周边壁以及透过所述周边壁形成的多个狭槽，所述多个狭槽用于穿过所述窗递送气体。
在另一实施例中，一种处理腔室窗冷却用系统可包括用于处理晶片的处理腔室，所述处理腔室包括窗。所述系统还可包括能够与所述处理腔室一起操作的冷却装置，所述冷却装置用于将气流递送到所述窗。所述冷却装置可包括支撑所述窗的支撑环，其中所述支撑环包括周边壁以及透过所述周边壁形成的多个狭槽，所述多个狭槽穿过所述窗的外表面递送所述气流。
在另一实施例中，一种能够与处理腔室一起操作的冷却装置可包括支撑环，所述支撑环支撑所述处理腔室的窗。所述支撑环可包括透过周边壁形成的多个狭槽，所述多个狭槽用于穿过所述窗递送气流。所述冷却装置还可包括用于将气体递送到所述支撑环的主管道。
附图说明
图1示出根据本公开的实施例，一种处理腔室窗冷却用系统。
图2示出图1所示处理腔室窗冷却用系统的冷却装置。
图3A是根据本公开的实施例，示出图2所示冷却装置的支撑环的透视图。
图3B是根据本公开的实施例，示出包括窗的图3A所示冷却装置的支撑环的透视图。
图4A-4B是根据本公开的实施例，示出图2所示冷却装置的进气管道的透视图。
图5演示根据本公开的实施例的气体递送装置。
图6示出根据本公开的实施例，来自用于加热器中的钨卤素灯泡的光谱发射及相对功率。
图7演示根据本公开的实施例，薄窗的示例性石英透射率。
图8演示根据本公开的实施例的抗反射石英窗透射率。
图9A-9C演示根据本公开的实施例的抗反射涂层的效果。
所述附图未必按比例绘制。所述附图仅为示意图，并非旨在描绘本公开内容的具体参数。所述附图旨在示出本公开内容的示例性实施例，且因此不应被视为对范围进行限制。在所述附图中，相同的编号表示相同的元件。
另外，为说明清晰起见，可省略或不按比例示出一些图中的某些元件。为清晰地进行说明，剖视图可呈“切片”或“近视”剖视图的形式，从而省略在“真实”剖视图中原本能看到的某些背景线。此外，为清晰起见，可在某些附图中省略一些参考编号。
具体实施方式
在下文中，现将参照附图来更充分地阐述根据本公开的系统及装置，所述附图示出所述方法的实施例。所述系统及装置可实施为许多不同的形式且不应被视为仅限于本文所述实施例。相反，提供这些实施例是为了使本公开将透彻及完整，并将向所属领域中的技术人员充分传达所述系统及方法的范围。
为方便及清晰起见，本文中将使用例如“顶部(top)”、“底部(bottom)”、“上部(upper)”、“下部(lower)”、“垂直(vertical)”、“水平(horizontal)”、“侧向(lateral)”、及“纵向(longitudinal)”等用语来阐述图中所示的这些组件及其构成零件相对于半导体制造器件的组件的几何形状及取向而言的相对放置及取向。所述术语将包括具体提及的词、其派生词及具有相似意义的词。
本文中所使用的以单数形式进行阐述且前面冠以词“一(a或an)”的元件或操作应被理解为包括复数个元件或操作，除非明确地阐述不如此包括。此外，参照本发明的“一个实施例”并非旨在作为限制。附加实施例也可包含所阐述的特征。
此外，用语“实质(substantial)”或“实质上(substantially)”以及用语“大约(approximate)”或“大约地(approximately)”可在一些实施例中互换使用，且可使用所属领域中的普通技术人员可接受的任意相对的测量数据来阐述。举例来说，这些用语可充当与参考参数的比较，以指示能够提供预期功能的偏差。尽管并非为限制性的，但从参考参数的偏差可以是例如小于1％、小于3％、小于5％、小于10％、小于15％、小于20％等的量。在一个实施例中，参考参数可以是度数值，例如180°。偏差+-180°(例如，小于1％、小于3％、小于5％的量)仍可在功能上被视为等效于恰好180°。
如在本文中进一步阐述，提供用于冷却处理腔室窗的方式。在一些实施例中，一种处理腔室窗冷却用系统可包括用于处理晶片(例如，半导体晶片)的处理腔室，其中所述处理腔室包括窗。在一些实施例中，所述窗容许来自灯总成的光被递送到晶片。所述系统还包括能够与所述处理腔室一起操作的冷却装置，所述冷却装置用于向所述窗递送气体。所述冷却装置包括与所述窗耦合且支撑所述窗的支撑环。所述支撑环包括周边壁、以及透过所述周边壁形成的多个狭槽。所述多个狭槽可穿过所述窗递送气体(例如，空气)以降低所述窗的温度。
现在转向图1-2，示出了根据本公开的实施例，一种处理腔室窗冷却用系统100及冷却装置101。如图所示，系统100可包括用于处理晶片104的处理腔室102，所述处理腔室102包括窗108。窗108可以是经抛光的透明或半透明石英件。在不同实施例中，窗108可以是不同的材料。
系统100还包括能够与处理腔室102一起操作的冷却装置110。冷却装置110能够操作以向窗108递送气体112。在示例性实施例中，冷却装置110包括耦合到窗108且支撑窗108的支撑环115。支撑环115可包括围绕窗108的周边延伸的周边壁120。尽管支撑环115及窗108两者一般都是圆形的，但本文中的实施例并不限于任意特定的形状。支撑环115可包括多个狭槽124，所述多个狭槽124透过周边壁120形成以例如沿由箭头126所示的方向(图2)穿过窗108递送气体112。在一些实施例中，沿与窗108平行或大约平行的方向穿过窗108递送气体112。可沿窗108的同一侧(例如，窗108的面向灯总成136的外侧)递送气体112。
如图所示，冷却装置101还可包括用于将气体112递送到支撑环115的主管道130。在一些实施例中，主管道130可以是集气室(plenum)。耦合到主管道130的可以是进气管道132，进气管道132直接物理耦合到支撑环115。主管道130与进气管道132流体连接以容许空气通过其流动。在一些实施例中，主管道130与进气管道132可以是一个连续的组件。如在图2中所示，进气管道132可例如通过夹具/扣钩/闩扣134可释放地耦合到主管道130。
系统100可包括与窗108及支撑环115相邻的灯总成136(图1)。灯总成136包括用于向晶片104提供光的灯138。所述系统还可包括用于将气体112递送到冷却装置101的风扇140。如在图2中所示，风扇140可直接或整体地耦合到主管道130。然而，本文中的实施例不受限制。
现在转向图3A-3B，将更详细地阐述根据本公开的实施例的支撑环115。图3A示出在不存在窗情况下的支撑环115，而图3B包括窗108。在示例性实施例中，支撑环115的所述多个狭槽中的第一组狭槽124A设置在窗108的第一侧144上。支撑环115的所述多个狭槽中的第二组狭槽124B设置在窗108的第二侧146上。在非限制性实施例中，第一组狭槽124A与第二组狭槽124B在支撑环115的圆周相对侧上间隔开大约180度定位。
在一些实施例中，窗108包括抗反射(anti-reflective，AR)光学涂层148。抗反射光学涂层148将透过窗108的透射率(transmission)从大约88％到90％的透射率提高到大约98％的透射率。透射率提高使得加热器能够以较低的功率等级操作，因此为用户节省操作费用，且使得灯能够更快地作出响应，从而使生产量提高类似10％的比例。
在一些实施例中，仅将抗反射光学涂层148应用到窗的外侧/灯侧。在一些实施例中，为了实现更高的透射率，将抗反射光学涂层148应用到窗的两侧(例如，灯侧及面向处理腔室的内部的侧)。在又一些其他实施例中，抗反射光学涂层148能够经受住来自灯的光通量(light flux)。举例来说，抗反射光学涂层148能够经受住环115在其中操作的大约250C到300C的环境。抗反射光学涂层148使得能够在灯与晶片之间进行更高效的能量转移。经提高的效率可有利地通过增大生产量、稳定低温工艺并降低操作工具的能源成本而节省成本(monetized)。
图4A-4B示出根据本公开的实施例的进气管道132。进气管道132被配置成直接物理耦合到支撑环115。在一些实施例中，一组调整片(tab)150可与支撑环115的一组对应的隆起(bump-out)152(图3A-3B)接合。可使用任意种类的紧固件(例如，螺栓、螺丝等)来固定所述一组调整片150与隆起152。进气管道132可包括用于将气体112递送到支撑环115的内室155。在一些实施例中，进气管道132包括用于接合主管道130的一组销(pin)156。
现在转向图5，将阐述根据本公开的实施例用于将气体递送到支撑环115的气体递送装置170。如图所示，气体递送装置170可包括用于接收气体的入口171、以及用于朝向支撑环115递送气体112的排气槽172。在一些实施例中，气体递送装置170以刀状形状/构型向窗108提供气流。气体递送装置170是一种高效率空气放大器，其被设计成将比馈送到器件的压缩空气更多的空气夹带到冷却射流(cooling jet)中。举例来说，气体递送装置170可夹带比所消耗的空气多5到10倍的空气，从而使得能够更高效地对窗进行冷却并对工具的操作具有最小影响。对窗进行冷却使得能够在低温下实现更精确且可重复的晶片设定点，而不存在影响工艺配方(process recipe)的过热的窗。在一些实施例中，气刀不包括集气室来夹带空气穿过窗。
图6演示钨卤素灯泡光谱功率发射(spectral power emission)。一些处理腔室窗未被涂布。相反，所述处理腔室窗仅为经抛光的石英。图6示出来自用于加热器中的钨卤素灯泡的光谱发射及相对功率。波长从400nm跨越到2600nm，其中在1000nm处存在峰值。半峰全宽(full width half max)介于600nm到1800nm。使尽可能多的能量从灯转移到晶片产生优点从而优化生产量并最小化能量消耗。
此外，图6示出石英窗的透射率曲线。每当光进入及离开表面时，大约4％到5％的能量会被散射。添加抗反射涂层会在具有大部分能量的光谱中更好地透射光，从而使得更多光能够透过窗被递送到窗内。在加热操作期间，损失到窗内的功率大约为800W。抗反射涂层可使能量损失减小80W左右。利用高压鼓风机(high-pressure blower)也是有益的，因为高压鼓风机使用集气室来从高速风扇捕获气流并清理(straighten out)流动，从而使气流转向180度，并穿过窗提供均匀的压力分布。均匀的压力与窗的均匀的热分布曲线相关，此直接追踪到被处理的晶片的响应。
图7演示薄窗的示例性石英透射率。如图所示，透射率％随着波长增加而快速增加。在大约200nm与2500nm之间，透射率高于90％，此使得能够透过窗进行显著的热传递。图8演示当石英窗包括抗反射涂层时的透射率％对波长。如图所示，透射率％即使在波长增加时仍相对稳定。在大约400nm与2500nm之间，透射率低于0.9％，此显著减小透过窗的热传递。
图9A-9C演示抗反射涂层的效果。举例来说，图9A示出不存在抗反射涂层时的透光率及反射率，图9B示出存在单层氟化镁涂层时的透光率及反射率，且图9B示出存在多层涂层时的透光率及反射率。在一些实施例中，n＝1.52的多层涂层可包含以下中的一者或多者：MgF2、SiO2、CeF3。在另一些其他实施例中，n＝1.6-1-8的多层涂层可包含Al2O3或Y2O3，且对于n～2的情形来说可包含HfO2、Sc2O3、Ta2O5、Nb2O5、LaTiO3、TiO2或HfO2、Sc2O3。如图所示，由于窗被涂布，因此透光率增大且反射率减小。
总而言之，本文中的实施例通过添加狭槽以使空气在处理腔室窗的大气侧上流动而提供支撑处理腔室窗的经修改的环。可从气刀、用于放大压缩空气源并夹带额外的气流的器件供应空气。其他实施例使用高压风扇以穿过窗提供气流。所述两种方式的第一个有利效果是将窗温度减小到低于100C，因此使得预加热模块能够在灯的控制回路下操作。在一些实施例中，风扇以70WPH工作比(duty cycle)将窗的温度从接近300C降低到低于90C。90WPH操作示出类似的结果，将窗温度从高于325C降低到90C。可归因于窗包含抗反射涂层的第二个有利效果是降低了加热器功率等级，因此为用户节省操作费用，且使得灯能够更快地作出响应，从而提高了生产量。
尽管本文已阐述了本发明的某些实施例，但本发明并不仅限于此，这是因为本发明的范围具有所属领域所允许的及本说明书所表明的最广范围。因此，以上说明不应被视为限制性的。相反，以上说明仅作为具体实施例的范例。所属领域中的技术人员将考虑到处于随附权利要求的范围及精神内的其他修改形式。

Claims (15)

1.一种处理腔室窗冷却用系统，所述系统包括：
用于处理晶片的处理腔室，所述处理室包括窗；
冷却装置，能够与所述处理腔室一起操作，所述冷却装置用于将气体递送到所述窗，其中所述冷却装置包括用于支撑所述窗的支撑环，且其中所述支撑环包括：
周边壁；以及
透过所述周边壁形成的多个狭槽，所述多个狭槽用于穿过所述窗递送气体。
2.根据权利要求1所述的系统，所述冷却装置还包括用于将所述气体递送到所述支撑环的主管道。
3.根据权利要求1所述的系统，所述冷却装置还包括耦合到所述支撑环的进气管道。
4.根据权利要求3所述的系统，其中所述进气管道直接物理耦合到所述支撑环，且其中所述进气管道朝向所述支撑环的所述多个狭槽递送所述气体。
5.根据权利要求3所述的系统，其中所述进气管道耦合在所述主管道与所述支撑环之间。
6.根据权利要求1所述的系统，还包括邻近所述窗的灯总成，所述灯总成包括用于向所述晶片提供光的灯。
7.根据权利要求1所述的系统，还包括用于向所述冷却装置递送所述气体的风扇。
8.根据权利要求1所述的系统，其中所述支撑环的所述多个狭槽中的第一组狭槽设置在所述窗的第一侧上，且其中所述支撑环的所述多个狭槽中的第二组狭槽设置在所述窗的第二侧上。
9.根据权利要求8所述的系统，其中所述第一组狭槽与所述第二组狭槽彼此间隔开大约180度定位。
10.根据权利要求1所述的系统，还包括位于所述窗上的抗反射光学涂层。
11.根据权利要求1所述的系统，其中所述窗是经抛光的石英。
12.一种冷却装置，能够与处理腔室一起操作，所述冷却装置包括：
支撑环，支撑所述处理腔室的窗，所述支撑环包括透过周边壁形成的多个狭槽，所述多个狭槽穿过所述窗递送气流；以及
主管道，用于向所述支撑环递送气体。
13.根据权利要求12所述的冷却装置，还包括耦合到所述主管道的进气管道，其中所述进气管道直接物理耦合到所述支撑环，且其中所述进气管道朝向所述支撑环的所述多个狭槽递送所述气流。
14.根据权利要求12所述的冷却装置，其中所述支撑环的所述多个狭槽中的第一组狭槽设置在所述窗的第一侧上，其中所述支撑环的所述多个狭槽中的第二组狭槽设置在所述窗的第二侧上，且其中所述气流从所述第一组狭槽朝向所述第二组狭槽行进。
15.一种处理腔室窗冷却用系统，所述系统包括：
用于处理晶片的处理腔室，所述处理腔室包括窗；
冷却装置，能够与所述处理腔室一起操作，所述冷却装置用于将气体递送到所述窗，其中所述冷却装置包括用于支撑所述窗的支撑环，且其中所述支撑环包括：
周边壁；以及
透过所述周边壁形成的多个狭槽，所述多个狭槽用于穿过所述窗的外表面递送气体。
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KR102409756B1 (ko) 2022-06-16
TW201946095A (zh) 2019-12-01
CN111937130B (zh) 2023-07-07
TWI744621B (zh) 2021-11-01
JP7144530B2 (ja) 2022-09-29
WO2019195081A3 (en) 2019-12-12
US20190311922A1 (en) 2019-10-10
US10903096B2 (en) 2021-01-26
KR20200131336A (ko) 2020-11-23
WO2019195081A2 (en) 2019-10-10

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