CN111933748A - Back-incident solar blind ultraviolet detector and manufacturing method thereof - Google Patents
Back-incident solar blind ultraviolet detector and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention is suitable for the technical field of ultraviolet detector preparation, and provides a back-incident solar blind ultraviolet detector and a manufacturing method thereof, wherein the method comprises the following steps: preparing a device layer of the solar blind ultraviolet detector on a sapphire substrate; separating a device layer of the solar blind ultraviolet detector from the sapphire substrate by adopting a laser lift-off technology; bonding the separated device layer of the solar blind ultraviolet detector to the ultraviolet light transmitting substrate. The back of the substrate is used as an ultraviolet photon incidence surface during working, so that the effective incidence area is greatly increased, and meanwhile, the front electrode can be made as large as possible, so that the electric field distribution in the vertical direction is more uniform, and the detection efficiency can be greatly improved. In addition, the sapphire substrate after laser stripping can be recycled, and the development cost of the solar blind ultraviolet detector is greatly reduced.
Description
Technical Field
The invention belongs to the technical field of ultraviolet light detector preparation, and particularly relates to a back-incident solar blind ultraviolet detector and a manufacturing method thereof.
Background
The ultraviolet light detector has the excellent characteristics of strong anti-interference capability, suitability for severe environments (such as high-temperature environments) and the like, and has important application value in the fields of scientific research, military, aerospace, environmental protection, fire prevention and a plurality of industrial control.
The traditional ultraviolet light detector mainly takes silicon-based ultraviolet light phototubes, photomultiplier tubes and the like as main components, and although the traditional ultraviolet light detector has high sensitivity, the traditional ultraviolet light detector has the defects of needing an additional optical filter or having large volume, being easy to damage, needing to work under high voltage and the like, and is difficult to meet the requirements of the development of modern electronic technology. In recent years, the ultraviolet alarming and tracking technology based on missile ultraviolet radiation detection is developed very rapidly, and higher requirements are put on ultraviolet detection devices. Therefore, a novel wide bandgap semiconductor ultraviolet detector which has high efficiency, low cost and easy integration and is suitable for working in severe environment becomes a hot spot of concern in the field of international photoelectric detection.
At present, a plurality of wide bandgap semiconductor materials are used for ultraviolet light detectors, and mainly comprise SiC, ZnO, GaN III-V compounds and the like. However, no wide bandgap semiconductor uv detector or imaging device has been the mainstream product in this field. The main reason for this is the lack of substrate materials and efficient technological means for the fabrication of large scale integrated devices. In addition, the ultraviolet light detector prepared by the materials has the disadvantages of high difficulty of the preparation process, strict requirements on equipment and processing conditions and high cost, and the detection efficiency is reduced because the upper surface is adopted to absorb photons and the top electrode can block part of incident photons.
Disclosure of Invention
In view of this, the embodiment of the invention provides a back-incident solar blind ultraviolet detector and a manufacturing method thereof, and aims to solve the problems of high manufacturing difficulty, high cost and low detection efficiency of an ultraviolet detector in the prior art.
In order to achieve the above object, a first aspect of the embodiments of the present invention provides a method for manufacturing a back-incident solar blind ultraviolet detector, including:
preparing a device layer of the solar blind ultraviolet detector on a sapphire substrate;
separating a device layer of the solar blind ultraviolet detector from the sapphire substrate by adopting a laser lift-off technology;
bonding the separated device layer of the solar blind ultraviolet detector to the ultraviolet light transmitting substrate.
As another embodiment of the present application, the separating the device layer of the solar blind ultraviolet detector from the sapphire substrate by using a laser lift-off technology includes:
irradiating the sapphire substrate by adopting laser with preset photon energy, enabling the laser to penetrate through the sapphire substrate and be absorbed by a first surface layer, in a device layer of the solar blind ultraviolet detector, in contact with the sapphire substrate, and generating gallium and nitrogen through thermal decomposition;
and heating the sapphire substrate on a heating plate with a preset temperature to liquefy the metal gallium, and separating a device layer of the solar blind ultraviolet detector from the sapphire substrate.
As another embodiment of the present application, the predetermined photon energy is a band gap photon energy which is greater than the energy of the first surface layer and less than the energy of the sapphire substrate.
The preset temperature is greater than 40 ℃.
As another embodiment of the present application, the substrate transmitting ultraviolet light is a substrate having a light transmittance of more than 90% and a thickness of 0.5 to 1 mm.
As another embodiment of the present application, the substrate transmitting ultraviolet light is a glass substrate having a light transmittance of more than 90% and a thickness of 0.5 to 1 mm.
As another embodiment of the present application, the device layer of the solar blind ultraviolet detector is a device layer of an AlGaN detector;
the preset photon energy is larger than the energy of the AlGaN surface layer and smaller than the band gap photon energy of the sapphire substrate.
As another embodiment of the present application, a process for fabricating a device layer of an AlGaN detector on a sapphire substrate includes:
sequentially preparing an N-type AlGaN layer, an intrinsic AlGaN layer and a P-type GaN layer on a sapphire substrate;
etching the P-type GaN layer and the intrinsic AlGaN layer to form a table top on the N-type AlGaN layer;
preparing a cathode in an exposed area of the N-type AlGaN layer, preparing an anode on the P-type GaN layer of the table top, and respectively forming ohmic contact electrodes;
and preparing a passivation layer on the surface of the device except for the ohmic contact electrode.
A second aspect of an embodiment of the present invention provides a back-incident solar blind ultraviolet detector, including:
a substrate that is transparent to ultraviolet light;
and a device layer of the solar blind ultraviolet detector bonded on the ultraviolet light transmitting substrate.
As another embodiment of the present application, the substrate transmitting ultraviolet light is a substrate having a light transmittance of more than 90% and a thickness of 0.5 to 1 mm.
As another embodiment of the present application, the device layer of the solar blind ultraviolet detector is a device layer of an AlGaN detector;
the device layer of the AlGaN detector comprises:
an N-type AlGaN layer bonded on the ultraviolet light transmitting substrate;
an intrinsic AlGaN layer and a P-type GaN layer which grow on the N-type AlGaN layer, wherein the intrinsic AlGaN layer and the P-type GaN layer form a table board;
an anode arranged on the P-type GaN layer of the table top and a cathode of the exposed region of the N-type AlGaN layer;
and preparing a passivation layer on the surface of the device except for the cathode and the anode.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: compared with the prior art, the solar blind ultraviolet detector has the advantages that the device layer of the solar blind ultraviolet detector is prepared on the sapphire substrate; separating a device layer of the solar blind ultraviolet detector from the sapphire substrate by adopting a laser lift-off technology; bonding the separated device layer of the solar blind ultraviolet detector to the ultraviolet light transmitting substrate. The back of the substrate is used as an ultraviolet photon incidence surface during working, so that the effective incidence area is greatly increased, and meanwhile, the front electrode can be made as large as possible, so that the electric field distribution in the vertical direction is more uniform, and the detection efficiency can be greatly improved. In addition, the sapphire substrate after laser stripping can be recycled, and the development cost of the solar blind ultraviolet detector is greatly reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic diagram of a method for manufacturing a back-incident solar blind ultraviolet detector provided by an embodiment of the invention;
FIG. 2 is a schematic diagram of a method of fabricating a device layer of an AlGaN detector on a sapphire substrate according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of device layers for fabricating an AlGaN detector on a sapphire substrate according to an embodiment of the present invention;
fig. 4 is an exemplary diagram of a back-incident solar blind ultraviolet detector provided by the embodiment of the invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic flow chart of an implementation of a method for manufacturing a back-incident solar blind ultraviolet detector according to an embodiment of the present invention, which is described in detail below.
The solar blind ultraviolet wavelength range is 200-285 nm, and when the solar blind ultraviolet light passes through the atmosphere, the light of the wave band is strongly absorbed by an ozone layer, so that solar blind ultraviolet radiation hardly exists near the ground surface. Compared with an infrared detector and a visible light detector, the solar blind ultraviolet detector can effectively shield interference of sunlight and other natural light sources, and has attracted extensive attention in military fields such as missile early warning and tracking, ultraviolet communication and the like and civil fields such as power monitoring, fire alarm and the like.
Optionally, in this step, the device layer of the solar blind ultraviolet detector is a device layer of an AlGaN detector. The forbidden bandwidth of AlGaN can be continuously adjusted between 3.4-6.2 eV according to the change of Al components, the variation range of the corresponding light absorption wavelength is 200-365 nm, and the AlGaN is a good choice for preparing solar blind deep ultraviolet detectors.
As shown in fig. 2 and 3, the process of fabricating the device layer 11 of the AlGaN detector on the sapphire substrate includes:
As shown in fig. 3, an N-type AlGaN layer 101, an intrinsic AlGaN layer 102, and a P-type GaN layer 103 are sequentially formed on a sapphire substrate 100. For example, the thickness of the N-type AlGaN layer 101 may be 3 micrometers, the thickness of the intrinsic AlGaN layer 102 may be 0.5 micrometers, and the thickness of the P-type GaN layer 103 may be 50 nanometers.
In this step, a mask is first etched on the P-type GaN layer, and the mask may be an anti-etching photoresist, such as AZ4620, AZ1500, or the like. Then through the jointExposing by contact lithography, developing to obtain mesa pattern, and etching by plasma dry etching method to obtain mesa, wherein the etching gas may be O2and/SF 6. Such as a mesa formed by etching the P-type GaN layer and the intrinsic AlGaN layer of fig. 3. Alternatively, the mesa may be a mesa having a side surface with a certain inclination angle, for example, the inclination angle may range from 30 ° to 90 °.
In the step, firstly, a single layer or a plurality of layers of photoresist are coated on the surface of the device, then electrode patterns are obtained through photoetching and developing, then a metal lamination layer with a certain thickness is sequentially evaporated by adopting an electron beam evaporation method, and the metal lamination layer adopts a strong metal which can be Ni/Ti/Al/Au, or Ti/Al/Pt/Au, and the like. And obtaining a cathode and an anode electrode through a stripping process, and finally forming ohmic contact through a rapid annealing process. In this embodiment, the annealing temperature may range from 800 ℃ to 1000 ℃ and the annealing time may range from 2 minutes to 5 minutes. As shown in fig. 3, the ohmic contact electrode is 104.
And step 204, preparing a passivation layer on the surface of the device except for the ohmic contact electrode.
And as shown in fig. 3, a passivation medium is generated on the surface of the device to form a passivation layer, so that surface passivation is realized. The growth method of the passivation medium can adopt thermal oxidation, low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition and the like, the passivation medium can also adopt different methods to grow a composite medium, and the passivation medium can comprise: SiO2, SiN, Al2O3 and the like, and the thickness of the passivation dielectric layer ranges from 100nm to 500 nm. After the medium growth is completed, photolithography is performed, and the electrode and the photosensitive region are exposed by an etching method, for example, 105 in fig. 3 is an etched passivation layer, which can reduce the leakage rate and improve the stability of the detector device.
Because the electrodes in the device layer of the solar blind ultraviolet detector occupy more areas, if the front surface is used as an ultraviolet photon incidence surface, the effective incidence area is smaller, and if the effective incidence area is increased, the front electrode can only be made smaller as much as possible. However, the effective incident area is still smaller, so that a back incident mode can be adopted, the effective incident area is greatly increased, and meanwhile, the front electrode can be made as large as possible, so that the electric field distribution in the vertical direction is more uniform. When the back incident type irradiation is adopted, ultraviolet photons are placed into the material body from different positions on the surface, and the ultraviolet photons can be fully accelerated by an electric field and then converted into photocurrent to be detected, so that the detection efficiency is improved.
And 102, separating a device layer of the solar blind ultraviolet detector from the sapphire substrate by adopting a laser lift-off technology.
As shown in fig. 3, in this step, the separating the device layer of the solar blind ultraviolet detector from the sapphire substrate by using the laser lift-off technology may include: irradiating the sapphire substrate by adopting laser with preset photon energy, enabling the laser to penetrate through the sapphire substrate and be absorbed by a first surface layer, in a device layer of the solar blind ultraviolet detector, in contact with the sapphire substrate, and generating gallium and nitrogen through thermal decomposition; heating the sapphire substrate on a heating plate with a preset temperature to liquefy metal gallium, and separating a device layer of the solar blind ultraviolet detector from the sapphire substrate; the preset photon energy is larger than the energy of the first surface layer and smaller than the band gap photon energy of the sapphire substrate. The preset temperature is greater than 40 ℃.
Optionally, when the device layer of the solar blind ultraviolet detector is the device layer of the AlGaN detector, the preset photon energy is larger than the energy of the AlGaN surface layer and smaller than the band gap photon energy of the sapphire substrate. Laser is absorbed by the AlGaN surface layer and then thermally decomposed to generate metal gallium (Ga) and nitrogen, and then the wafer is heated on a hot plate with the temperature of more than 40 ℃, so that Ga is liquefied, and the device layer of the AlGaN detector is separated from the sapphire substrate.
The sapphire substrate after laser stripping can be recycled, so that the development cost of the solar blind ultraviolet detector is reduced.
And 103, bonding the separated device layer of the solar blind ultraviolet detector to the ultraviolet light transmitting substrate.
In the step, when the device layer of the solar blind ultraviolet detector is the device layer of the AlGaN detector, the device layer of the separated AlGaN detector is bonded to the ultraviolet light transmitting substrate. Optionally, the ultraviolet light transmitting substrate may be a thin, high light transmittance substrate. For example, the substrate transmitting ultraviolet light has a light transmittance of more than 90% and a thickness of 0.5 to 1 mm. The ultraviolet-transmitting substrate is a glass substrate with the light transmittance of more than 90% and the thickness of 0.5-1 mm.
When the back-incident solar blind ultraviolet detector works, as shown in fig. 4, the substrate 106 which transmits ultraviolet light serves as a back incident surface and plays a role in supporting and protecting the AlGaN ultraviolet detector.
According to the manufacturing method of the back-incident solar blind ultraviolet detector, the device layer of the solar blind ultraviolet detector is firstly prepared on the sapphire substrate; separating a device layer of the solar blind ultraviolet detector from the sapphire substrate by adopting a laser lift-off technology; bonding the separated device layer of the solar blind ultraviolet detector to the ultraviolet light transmitting substrate. The back of the substrate is used as an ultraviolet photon incidence surface during working, so that the effective incidence area is greatly increased, and meanwhile, the front electrode can be made as large as possible, so that the electric field distribution in the vertical direction is more uniform, and the detection efficiency can be greatly improved. In addition, the sapphire substrate after laser stripping can be recycled, and the development cost of the solar blind ultraviolet detector is greatly reduced.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
Corresponding to the method for manufacturing the back-incident solar blind ultraviolet detector in the above embodiments, fig. 4 shows an exemplary diagram of a back-incident solar blind ultraviolet detector provided in an embodiment of the present invention. As shown in fig. 4, the apparatus may include:
an ultraviolet-transparent substrate 106;
and a device layer 11 of a solar blind ultraviolet detector bonded on the ultraviolet light transmitting substrate.
Optionally, as shown in fig. 4, the device layer 11 of the solar-blind ultraviolet detector is a device layer of an AlGaN detector;
the device layer of the AlGaN detector comprises:
an N-type AlGaN layer 101 bonded on the ultraviolet light transmitting substrate 106;
an intrinsic AlGaN layer 102 and a P-type GaN layer 103 grown on the N-type AlGaN layer 101, wherein the intrinsic AlGaN layer 102 and the P-type GaN layer 103 form a mesa; optionally, the side inclination angle of the table-board can be 30-90 degrees;
an anode disposed on the P-type GaN layer 103 of the mesa and a cathode of the exposed region of the N-type AlGaN layer 101; optionally, a rapid annealing process may be used to form the ohmic contact electrode.
And preparing a passivation layer 106 on the device surface except for the cathode and anode.
Optionally, the ultraviolet-transmitting substrate is a substrate with a light transmittance of more than 90% and a thickness of 0.5-1 mm. The ultraviolet-transmitting substrate is a glass substrate with the light transmittance of more than 90% and the thickness of 0.5-1 mm.
The back-incident solar blind ultraviolet detector comprises an ultraviolet light transmitting substrate; and a device layer of the solar blind ultraviolet detector bonded on the ultraviolet light transmitting substrate. The back of the substrate is used as an ultraviolet photon incidence surface during working, so that the effective incidence area is greatly increased, and meanwhile, the front electrode can be made as large as possible, so that the electric field distribution in the vertical direction is more uniform, and the detection efficiency can be greatly improved. In addition, the sapphire substrate after laser stripping can be recycled, and the development cost of the solar blind ultraviolet detector is greatly reduced.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A method for manufacturing a back-incident solar blind ultraviolet detector is characterized by comprising the following steps:
preparing a device layer of the solar blind ultraviolet detector on a sapphire substrate;
separating a device layer of the solar blind ultraviolet detector from the sapphire substrate by adopting a laser lift-off technology;
bonding the separated device layer of the solar blind ultraviolet detector to the ultraviolet light transmitting substrate.
2. The method for manufacturing the back-incident solar blind ultraviolet detector according to claim 1, wherein the step of separating the device layer of the solar blind ultraviolet detector from the sapphire substrate by using a laser lift-off technology comprises the following steps:
irradiating the sapphire substrate by adopting laser with preset photon energy, enabling the laser to penetrate through the sapphire substrate and be absorbed by a first surface layer, in a device layer of the solar blind ultraviolet detector, in contact with the sapphire substrate, and generating gallium and nitrogen through thermal decomposition;
and heating the sapphire substrate on a heating plate with a preset temperature to liquefy the metal gallium, and separating a device layer of the solar blind ultraviolet detector from the sapphire substrate.
3. The method for manufacturing a back-incident solar-blind ultraviolet detector as claimed in claim 2,
the preset photon energy is larger than the energy of the first surface layer and smaller than the band gap photon energy of the sapphire substrate.
The preset temperature is greater than 40 ℃.
4. The method for manufacturing the back-incident solar blind ultraviolet detector according to any one of claims 1 to 3, wherein the ultraviolet light transmitting substrate is a substrate with light transmittance of more than 90% and thickness of 0.5-1 mm.
5. The method for manufacturing a back-incident solar-blind ultraviolet detector as claimed in claim 4,
the ultraviolet-transmitting substrate is a glass substrate with the light transmittance of more than 90% and the thickness of 0.5-1 mm.
6. The method for manufacturing the back-incident solar-blind ultraviolet detector according to claim 2, wherein the device layer of the solar-blind ultraviolet detector is a device layer of an AlGaN detector;
the preset photon energy is larger than the energy of the AlGaN surface layer and smaller than the band gap photon energy of the sapphire substrate.
7. The method for manufacturing the back-incident solar blind ultraviolet detector as claimed in claim 6, wherein the step of preparing the device layer of the AlGaN detector on the sapphire substrate comprises the following steps:
sequentially preparing an N-type AlGaN layer, an intrinsic AlGaN layer and a P-type GaN layer on a sapphire substrate;
etching the P-type GaN layer and the intrinsic AlGaN layer to form a table top on the N-type AlGaN layer;
preparing a cathode in an exposed area of the N-type AlGaN layer, preparing an anode on the P-type GaN layer of the table top, and respectively forming ohmic contact electrodes;
and preparing a passivation layer on the surface of the device except for the ohmic contact electrode.
8. A back-incident solar blind ultraviolet detector, comprising:
a substrate that is transparent to ultraviolet light;
and a device layer of the solar blind ultraviolet detector bonded on the ultraviolet light transmitting substrate.
9. The back-incident solar blind ultraviolet detector of claim 8, wherein the substrate transmitting ultraviolet light is a substrate having a light transmittance of more than 90% and a thickness of 0.5-1 mm.
10. The back-incident solar-blind ultraviolet detector according to claim 8, wherein the device layer of the solar-blind ultraviolet detector is a device layer of an AlGaN detector;
the device layer of the AlGaN detector comprises:
an N-type AlGaN layer bonded on the ultraviolet light transmitting substrate;
an intrinsic AlGaN layer and a P-type GaN layer which grow on the N-type AlGaN layer, wherein the intrinsic AlGaN layer and the P-type GaN layer form a table board;
an anode arranged on the P-type GaN layer of the table top and a cathode of the exposed region of the N-type AlGaN layer;
and preparing a passivation layer on the surface of the device except for the cathode and the anode.
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