CN107180890A - A kind of back-illuminated type narrow bandpass solar blind ultraviolet detector and preparation method thereof - Google Patents
A kind of back-illuminated type narrow bandpass solar blind ultraviolet detector and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000001914 filtration Methods 0.000 claims abstract description 15
- 238000005247 gettering Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 107
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
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- 229910004541 SiN Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 2
- 238000000825 ultraviolet detection Methods 0.000 abstract description 4
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 description 9
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- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
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- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0264—Inorganic materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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Abstract
The invention discloses a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector, include substrate, AlN cushions, content gradually variational Al successively from the bottom upx1Ga1‑x1N shortwave wave filtering layers, wide bandgap semiconductor n+ Alx2Ga1‑x2N ohmic contact layers, the unintentional doping Al of wide bandgap semiconductorx2Ga1‑x2N Intrinsic Getterings layer, wide bandgap semiconductor p-type Alx2Ga1‑x2N ohm layers, p-type Alx3Ga1‑x3N graded beddings, p+ types GaN ohmic contact layer and p-type Ohm contact electrode；And above-mentioned material upper surface is provided with dielectric passivation layer, wide bandgap semiconductor n+ Alx2Ga1‑x2Contact electrode is equipped with N ohmic contact layers and p-type Ohm contact electrode.This detector can effectively filter out clutter by itself band structure characteristic, strengthen the inhibitory action to shortwave, realize the solar blind UV detection of arrowband；Detector cost is relatively low, is conducive to promoting the use of.
Description
Technical field
The invention belongs to semiconductor photoelectronic device technical field, it is related to solar-blind UV detector, is specially a kind of back of the body
Illuminated narrow bandpass solar blind ultraviolet detector and preparation method thereof.
Background technology
Ultraviolet detection technology is developed rapidly after Laser Detection Technique and infrared detection technique another new
Detection Techniques.Blind type UV photodetector has extensive because not influenceed by sun background radiation in military and civilian field
Application.In military aspect, day, blind ultraviolet detection technology approached alarm, over the horizon secret communication, ship direction guiding in guided missile
In terms of have stronger application value.At civilian aspect, generally chemical substance is replaced to kill microorganism and thin using ultraviolet
Bacterium, therefore can be had using sterilization of the ultraviolet detector to food and medicine packaging, medicine equipment, drinking water and industrial wastewater
The monitoring of effect.In addition, highly sensitive solar blind ultraviolet detector is also widely used in flame sensing, ozone detection, laser acquisition, fluorescence
The numerous areas such as analysis and astronomy research.
The cutoff wavelength of solar-blind UV detector is less than 280nm, is not responded under sun background radiation, this is to red
Detection ultraviolet radioactive has special meaning under outer and visible ray background.Ultraviolet detector experienced the development of the past few decades,
A variety of UV detector structures are emerged, such as：Photoconduction, metal-semiconductor-metal, Schottky barrier and p-i-n types.
In said structure, although the inhibitory action of long wave can be realized, but the suppression of shortwave can not be realized, in actual applications still
Need to install complexity additional and expensive shortwave suppresses filtering system and could realize that narrow bandpass is detected, considerably increase application cost.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector and its system
The characteristics of Preparation Method, detector is effectively filter out clutter by itself band structure characteristic, realizes the day blind purple of arrowband
Outer optical detection.
The technical problems to be solved by the invention are realized using following technical scheme：
A kind of back-illuminated type narrow bandpass solar blind ultraviolet detector, including
Substrate, and
The AlN cushions above substrate are arranged on, and
It is arranged on the content gradually variational Al above AlN cushionsx1Ga1-x1N shortwave wave filtering layers, and
It is arranged on content gradually variational Alx1Ga1-x1Wide bandgap semiconductor n+-Al above N shortwave wave filtering layersx2Ga1-x2N ohm connect
Contact layer, and
It is arranged on wide bandgap semiconductor n+-Alx2Ga1-x2The unintentional doping of wide bandgap semiconductor above N ohmic contact layers
Alx2Ga1-x2N Intrinsic Getterings layer, and
It is arranged on the unintentional doping Al of wide bandgap semiconductorx2Ga1-x2Wide bandgap semiconductor p-type above N Intrinsic Getterings layer
Alx2Ga1-x2N ohm layers, and
It is arranged on wide bandgap semiconductor p-type Alx2Ga1-x2P-type Al above N ohm layersx3Ga1-x3N graded beddings, and
It is arranged on p-type Alx3Ga1-x3P+ type GaN ohmic contact layers above N graded beddings, and
It is arranged on the p-type Ohm contact electrode above p+ type GaN ohmic contact layers；
Above-mentioned all material upper surface is provided with dielectric passivation layer, wherein, opened on described dielectric passivation layer
Provided with the fairlead of electrode can be appeared；
In the wide bandgap semiconductor n+-Alx2Ga1-x2Contact is equipped with N ohmic contact layers and p-type Ohm contact electrode
Electrode.
Further improvement is that, the content gradually variational Alx1Ga1-x1Al components in N shortwave wave filtering layers are x2≤x1≤1,
Al components taper to x2 from 1, and wherein thickness in monolayer is 2nm~2 μm.
Further improvement is that, the unintentional doping Al of wide bandgap semiconductorx2Ga1-x2X2 in N Intrinsic Getterings layer is
The corresponding Al components of institute's detector wavelength, wherein 0.38≤x2≤1.
Further improvement is that, the p-type Alx3Ga1-x3Al components in N graded beddings are 0≤x3≤x2, and Al components are from x2
0 is tapered to, wherein thickness in monolayer is 2nm~2 μm.
Further improvement is that, the thickness of the dielectric passivation layer is between 5nm to 5 μm.
Further improvement is that, described dielectric passivation layer uses dielectric passivation material.
Further improvement is that, described dielectric passivation material is SiO2, SiN, Al2O3In one or more.
Further improvement is that, described substrate is twin polishing Sapphire Substrate.
Further improvement is that, described contact electrode structure is shaped as circle, either square or annular, Huo Zhejiao
One kind in interdigitation.
A kind of method for preparing back-illuminated type narrow bandpass solar blind ultraviolet detector, comprises the following steps：
S1, on substrate the epitaxial layer of epitaxial growth back-illuminated type narrow bandpass solar blind ultraviolet detector successively, epitaxial structure exists
AlN cushions, content gradually variational Al are followed successively by substrate from top to bottomx1Ga1-x1N shortwaves wave filtering layer, wide bandgap semiconductor n+-
Alx2Ga1-x2The unintentional doping Al of N ohmic contact layers, wide bandgap semiconductorx2Ga1-x2N Intrinsic Getterings layer, wide bandgap semiconductor p-type
Alx2Ga1-x2N ohm layers, p-type Alx3Ga1-x3N content gradually variationals layer, p+ type GaN ohmic contact layers；
S2, prepared using semiconductor microactuator processing technology p-type Ohm contact electrode gold prepared in p+ type GaN ohmic contact layers
Belong to structure；
S3, using semiconductor microactuator processing etching technics make n-type Ohmic contact table top, be etched to wide bandgap semiconductor n+-
Alx2Ga1-x2On N ohmic contact layers；
S4, on whole electrode structure surface dielectric passivation layer is covered, and by semiconductor microactuator processing technology in p-type Europe
Nurse contacts and etches fairlead above electrode and n-type Ohmic contact table top；
S5, using semiconductor microactuator processing technology system respectively in wide bandgap semiconductor n+-Alx2Ga1-x2N ohmic contact layers and p
Contact electrode is made on type Ohm contact electrode.
The beneficial effects of the invention are as follows：This detector can effectively be filtered in detection process by itself band structure characteristic
Go out clutter, enhance the inhibitory action to shortwave, realize the solar blind UV detection of arrowband；Meanwhile, this panel detector structure is reasonable,
Cost is relatively low, is conducive to promoting the use of.
Brief description of the drawings
Fig. 1 is structural representation of the invention；
Wherein, 101- substrates, 102-AlN cushions, 103- content gradually variationals Alx1Ga1-x1N shortwave wave filtering layers, 104- is wide to be prohibited
Band semiconductor n+-Alx2Ga1-x2N ohmic contact layers, the unintentional doping Al of 105- wide bandgap semiconductorsx2Ga1-x2N Intrinsic Getterings layer,
106- wide bandgap semiconductor p-types Alx2Ga1-x2N ohm layers, 107-p types Alx3Ga1-x3N graded beddings, 108-p+ type GaN Ohmic contacts
Layer, 109-p type Ohm contact electrodes, 110- dielectric passivation layers, 111- contact electrodes, 112-n type Ohmic contact table tops.
Embodiment
In order that the technical means, the inventive features, the objects and the advantages of the present invention are easy to understand, tie below
Conjunction is specifically illustrating, and the present invention is expanded on further.
As shown in figure 1, a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector, including substrate 101, and it is arranged on substrate
The AlN cushions 102 of 101 tops, and it is arranged on the content gradually variational Al of the top of AlN cushions 102x1Ga1-x1N shortwave wave filtering layers
103, and it is arranged on content gradually variational Alx1Ga1-x1The wide bandgap semiconductor n+-Al of the top of N shortwaves wave filtering layer 103x2Ga1-x2N Europe
Nurse contact layer 104, and it is arranged on wide bandgap semiconductor n+-Alx2Ga1-x2The wide bandgap semiconductor of the top of N ohmic contact layers 104
Unintentional doping Alx2Ga1-x2N Intrinsic Getterings layer 105, and it is arranged on the unintentional doping Al of wide bandgap semiconductorx2Ga1-x2N sheets
Levy the wide bandgap semiconductor p-type Al of the top of absorbed layer 105x2Ga1-x2N ohm layers 106, and it is arranged on wide bandgap semiconductor p-type
Alx2Ga1-x2The p-type Al of the top of N ohm layers 106x3Ga1-x3N graded beddings 107, and it is arranged on p-type Alx3Ga1-x3N graded beddings 107
The p+ types GaN ohmic contact layer 108 of top, and it is arranged on the p-type Ohmic contact electricity of the top of p+ types GaN ohmic contact layer 108
Pole 109；Above-mentioned all material upper surface is provided with dielectric passivation layer 110, wherein, opened up on dielectric passivation layer 110
There is the fairlead (not shown) that can appear electrode；In wide bandgap semiconductor n+-Alx2Ga1-x2N ohmic contact layers 104 and p-type
Contact electrode 111 is equipped with Ohm contact electrode 109.
It is used as preferred case, the content gradually variational Alx1Ga1-x1Al components in N shortwaves wave filtering layer 103 are x2≤x1≤1,
Al components taper to x2 from 1, and wherein thickness in monolayer is 2nm~2 μm.
It is used as preferred case, the unintentional doping Al of wide bandgap semiconductorx2Ga1-x2X2 in N Intrinsic Getterings layer 105 is
The corresponding Al components of institute's detector wavelength, wherein 0.38≤x2≤1.
It is used as preferred case, the p-type Alx3Ga1-x3Al components in N graded beddings 107 are 0≤x3≤x2, Al components from
X2 tapers to 0, and wherein thickness in monolayer is 2nm~2 μm.
As preferred case, the thickness of the dielectric passivation layer 110 is between 5nm to 5 μm.
As preferred case, described dielectric passivation layer 110 uses dielectric passivation material.
As preferred case, described dielectric passivation material is SiO2, SiN, Al2O3In one or more.
As preferred case, described substrate 101 is twin polishing Sapphire Substrate.
As preferred case, the described planform of contact electrode 111 is circle, either square or annular, Huo Zhejiao
One kind in interdigitation.
Above-mentioned back-illuminated type narrow bandpass solar blind ultraviolet detector is prepared using following methods：
S1, the epitaxial layer of epitaxial growth back-illuminated type narrow bandpass solar blind ultraviolet detector, epitaxial structure successively on the substrate 101
It is followed successively by AlN cushions 102, content gradually variational Al from top to bottom on the substrate 101x1Ga1-x1N shortwaves wave filtering layer 103, broad stopband half
Conductor n+-Alx2Ga1-x2The unintentional doping Al of N ohmic contact layers 104, wide bandgap semiconductorx2Ga1-x2N Intrinsic Getterings layer 105, width
Bandgap semiconductor p-type Alx2Ga1-x2N ohm layers 106, p-type Alx3Ga1-x3N content gradually variationals layer 107, p+ type GaN ohmic contact layers
108；
S2, prepared using semiconductor microactuator processing technology p-type Ohmic contact electricity prepared in p+ types GaN ohmic contact layer 108
The metal structure of pole 109；
S3, n-type Ohmic contact table top 112 made using semiconductor microactuator processing etching technics, be etched to wide bandgap semiconductor n
+-Alx2Ga1-x2On N ohmic contact layers 104；
S4, in whole electrode structure surface covering dielectric passivation layer 110, and by semiconductor microactuator processing technology in p
Type Ohm contact electrode 109 and n-type Ohmic contact table top 112 etch fairlead (not shown) above；
S5, using semiconductor microactuator processing technology system respectively in wide bandgap semiconductor n+-Alx2Ga1-x2N ohmic contact layers 104
Electrode 111 is contacted with being made on p-type Ohm contact electrode 109.
Below by specific embodiment：254nm back-illuminated type narrow bandpass solar blind ultraviolet detectors come illustrate the present invention implementation,
Its manufacturing process is as follows：
1) backing material used in is twin polishing Sapphire Substrate；
2) semiconductor cleaning process of standard is carried out to twin polishing Sapphire Substrate；
3) using MOCVD methods in low temperature AI N cushions thick twin polishing Grown on Sapphire Substrates 600nm, growth
Temperature control is at 650 DEG C；
4) temperature in MOCVD storehouses is risen to 1100 DEG C, in the unintentional of one layer of 150nm thickness of AlN cushions Epitaxial growth
Adulterate Al0.80Ga0.20Unintentional doping Al thick N and one layer of 150nm0.65Ga0.35N short-wave absorptions layer, next one layer of growth
N+Al thick 500nm0.55Ga0.45N ohmic contact layers, one layer of 200nm thick unintentional doping Al0.55Ga0.45N Intrinsic Getterings layer,
P-type Al thick one layer of 50nm0.55Ga0.45The p+Al of N ohm layers, next one layer of 50nm thickness of growth0.2Ga0.8N transition zones, finally
P+GaN ohmic contact layers thick one layer of 100nm of growth；
5) p-type ohm is used as in p+GaN surface deposition double-level-metal Ni (5nm)/Au (5nm) using electron beam evaporation method
Electrode is contacted, electrode uses a diameter of 50 μm of circles；
6) n-type Ohmic contact table top is made using coupled plasma etch method, etching depth is 500nm；
7) the thick SiO of one layer of 200nm next are deposited in whole electrode surface2Dielectric layer is used as passivation layer, this layer of medium
Layer plays a part of antireflection simultaneously；
8) corrode after fairlead, multilayer Ti (40nm)/Al (80nm)/Ni (10nm)/Au is deposited by electron beam evaporation
(100nm) is used as contact electrode；
9) whole device is completed into whole element manufacturing in 850 DEG C of rapid thermal annealing 30s formation Ohmic contacts.
The basic principles, principal features and advantages of the present invention have been shown and described above.The technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, the original for simply illustrating the present invention described in above-described embodiment and specification
Reason, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes and improvements
It all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its equivalent circle
It is fixed.
Claims (10)
1. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector, it is characterised in that：Including
Substrate (101), and
The AlN cushions (102) above substrate (101) are arranged on, and
It is arranged on the content gradually variational Al above AlN cushions (102)x1Ga1-x1N shortwaves wave filtering layer (103), and
It is arranged on content gradually variational Alx1Ga1-x1Wide bandgap semiconductor n+-Al above N shortwaves wave filtering layer (103)x2Ga1-x2N ohm
Contact layer (104), and
It is arranged on wide bandgap semiconductor n+-Alx2Ga1-x2The unintentional doping of wide bandgap semiconductor above N ohmic contact layers (104)
Alx2Ga1-x2N Intrinsic Getterings layer (105), and
It is arranged on the unintentional doping Al of wide bandgap semiconductorx2Ga1-x2Wide bandgap semiconductor p-type above N Intrinsic Getterings layer (105)
Alx2Ga1-x2N ohm layers (106), and
It is arranged on wide bandgap semiconductor p-type Alx2Ga1-x2P-type Al above N ohm layers (106)x3Ga1-x3N graded beddings (107), with
And
It is arranged on p-type Alx3Ga1-x3P+ types GaN ohmic contact layer (108) above N graded beddings (107), and
It is arranged on the p-type Ohm contact electrode (109) above p+ types GaN ohmic contact layer (108)；
Above-mentioned all material upper surface is provided with dielectric passivation layer (110), wherein, in described dielectric passivation layer
(110) fairlead of electrode can be appeared by being offered on；
In the n+-Alx2Ga1-x2Contact electrode is equipped with N ohmic contact layers (104) and p-type Ohm contact electrode (109)
(111)。
2. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 1, it is characterised in that：The component is gradually
Become Alx1Ga1-x1Al components in N shortwaves wave filtering layer (103) taper to x2 for x2≤x1≤1, Al components from 1, wherein singly
Thickness degree is 2nm~2 μm.
3. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 1, it is characterised in that：The broad stopband
The unintentional doping Al of semiconductorx2Ga1-x2X2 in N Intrinsic Getterings layer (105) is the corresponding Al components of institute's detector wavelength, wherein
0.38≤x2≤1。
4. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 1, it is characterised in that：The p-type
Alx3Ga1-x3The Al components of (107) are 0≤x3≤x2 in N graded beddings, and Al components taper to 0, wherein thickness in monolayer from x2
For 2nm~2 μm.
5. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 1, it is characterised in that：The insulation is situated between
The thickness of matter passivation layer (110) is between 5nm to 5 μm.
6. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 1, it is characterised in that：Described insulation
Dielectric passivation layer (110) uses dielectric passivation material.
7. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 6, it is characterised in that：Described medium
Passivating material is SiO2, SiN, Al2O3In one or more.
8. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 1, it is characterised in that：Described substrate
(101) it is twin polishing Sapphire Substrate.
9. a kind of back-illuminated type narrow bandpass solar blind ultraviolet detector according to claim 1, it is characterised in that：Described contact
Electrode (111) planform is circle, either square or annular, or one kind in interdigital.
10. a kind of method of the back-illuminated type narrow bandpass solar blind ultraviolet detector prepared described in claim any one of 1-9, its feature
It is, comprises the following steps：
S1, on substrate (101) epitaxial layer of epitaxial growth back-illuminated type narrow bandpass solar blind ultraviolet detector successively, epitaxial structure exists
AlN cushions (102), content gradually variational Al are followed successively by substrate (101) from top to bottomx1Ga1-x1N shortwaves wave filtering layer (103), wide taboo
Band semiconductor n+-Alx2Ga1-x2The unintentional doping Al of N ohmic contact layers (104), wide bandgap semiconductorx2Ga1-x2N Intrinsic Getterings layer
(105), wide bandgap semiconductor p-type Alx2Ga1-x2N ohm layers (106), p-type Alx3Ga1-x3N content gradually variationals layer (107), p+ types GaN
Ohmic contact layer (108)；
S2, using semiconductor microactuator processing technology prepare in p+ types GaN ohmic contact layer (108) prepare p-type Ohm contact electrode
(109) metal structure；
S3, using semiconductor microactuator processing etching technics make n-type Ohmic contact table top (112), be etched to wide bandgap semiconductor n+-
Alx2Ga1-x2On N ohmic contact layers (104)；
S4, in whole electrode structure surface covering dielectric passivation layer (110), and by semiconductor microactuator processing technology in p-type Europe
Nurse contact electrode (109) and n-type Ohmic contact table top (112) etch fairlead above；
S5, using semiconductor microactuator processing technology system respectively in wide bandgap semiconductor n+-Alx2Ga1-x2N ohmic contact layers (104) and p
Contact electrode (111) is made on type Ohm contact electrode (109).
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| CN111933747A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Surface array back-incident solar blind ultraviolet detector and preparation method thereof |
| CN111933748A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Back-incident solar blind ultraviolet detector and manufacturing method thereof |
| CN112038418A (en) * | 2020-09-11 | 2020-12-04 | 南京大学 | High-wavelength-selectivity ultraviolet detector and manufacturing method thereof |
| CN114203853A (en) * | 2021-11-10 | 2022-03-18 | 武汉敏芯半导体股份有限公司 | Preparation method of high-speed photoelectric detector chip |
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