CN111933747A - Surface array back-incident solar blind ultraviolet detector and preparation method thereof - Google Patents
Surface array back-incident solar blind ultraviolet detector and preparation method thereof Download PDFInfo
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- CN111933747A CN111933747A CN202010711529.XA CN202010711529A CN111933747A CN 111933747 A CN111933747 A CN 111933747A CN 202010711529 A CN202010711529 A CN 202010711529A CN 111933747 A CN111933747 A CN 111933747A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 63
- 239000010980 sapphire Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 29
- 238000004806 packaging method and process Methods 0.000 claims abstract description 16
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 93
- 230000031700 light absorption Effects 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Abstract
The invention provides an area array back-incident solar blind ultraviolet detector and a preparation method thereof, wherein the preparation method of the area array back-incident solar blind ultraviolet detector comprises the following steps: preparing a device layer of a solar blind ultraviolet detector on a sapphire substrate to obtain an APD array wafer; and reversely packaging the APD array wafer on a circuit substrate, and stripping the sapphire substrate of the APD array wafer by adopting a laser stripping technology to obtain the area array back-incident solar blind ultraviolet detector. The area array back-incident solar blind ultraviolet detector and the preparation method thereof provided by the invention can reduce the process difficulty and the manufacturing cost of the solar blind ultraviolet detector.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to an area array back-incident solar blind ultraviolet detector and a preparation method thereof.
Background
The solar blind ultraviolet wavelength range is 200-285 nm, and solar blind ultraviolet radiation hardly exists near the ground surface, so that the solar blind ultraviolet detector can effectively shield the interference of sunlight and other natural light sources compared with an infrared detector and a visible light detector, and has wide attention in military fields such as missile early warning and tracking, ultraviolet communication and the like, and civil fields such as power monitoring, fire alarm and the like.
In practical application, a solar blind ultraviolet detector with a large-area array is the most needed, if a traditional front-incident structure is adopted, the packaging form of lead bonding cannot be applied to the large-area array, meanwhile, the lead bonding also needs to specially protect bonding wires, and the design difficulty and the manufacturing cost are increased.
Disclosure of Invention
The invention aims to provide an area array back-incident type solar blind ultraviolet detector and a preparation method thereof, so as to reduce the process difficulty and the manufacturing cost of the solar blind ultraviolet detector.
In order to achieve the purpose, the invention provides a preparation method of an area array back-incident solar blind ultraviolet detector, which comprises the following steps:
preparing a device layer of a solar blind ultraviolet detector on a sapphire substrate to obtain an APD array wafer;
and reversely packaging the APD array wafer on a circuit substrate, and stripping the sapphire substrate of the APD array wafer by adopting a laser stripping technology to obtain the area array back-incident solar blind ultraviolet detector.
Optionally, the preparing a device layer of the solar blind ultraviolet detector on the sapphire substrate to obtain the APD array wafer includes:
manufacturing an alignment mark in a first preset area of the sapphire substrate;
and manufacturing a plurality of APD units in a second preset area of the sapphire substrate according to preset intervals to obtain an APD array wafer.
Optionally, the flip-chip packaging the APD array wafer on a circuit substrate includes:
and inversely packaging the APD array wafer on the circuit substrate according to the alignment mark.
Optionally, the preparation method of the APD unit includes:
sequentially growing an N-type ohmic contact layer, an I-type light absorption layer and a P-type ohmic contact layer on a sapphire substrate;
etching the P-type ohmic contact layer and the I-type light absorption layer to form a table top on the N-type ohmic contact layer;
and preparing a cathode in the exposed area of the N-type ohmic contact layer, preparing an anode on the P-type ohmic contact layer of the table top, and forming an ohmic contact electrode to obtain the APD unit.
Optionally, the peeling off the sapphire substrate of the APD array wafer by using a laser peeling-off technique includes:
irradiating the sapphire substrate of the APD array wafer by adopting laser with preset photon energy, so that the laser penetrates through the sapphire substrate and is absorbed by an ohmic contact layer in contact with the sapphire substrate to generate thermal decomposition, and generating gallium metal and nitrogen;
and heating the APD array wafer on a heating plate with a preset temperature to liquefy the metal gallium, and separating a device layer of the solar blind ultraviolet detector from the sapphire substrate.
Optionally, the preset photon energy is greater than the band gap energy of the first surface layer and less than the band gap energy of the sapphire substrate.
Optionally, the preset temperature is greater than 40 ℃.
In order to achieve the above object, the present invention further provides an area array back-incident solar blind ultraviolet detector, including:
the APD array wafer is reversely packaged on the circuit substrate;
the upper electrode of the APD array wafer for stripping the sapphire substrate is in point contact connection with the upper electrode contact point of the circuit substrate; and the lower electrode of the APD array wafer with the stripped sapphire substrate is in contact connection with the lower electrode contact point of the circuit substrate.
Optionally, the APD array wafer includes:
the device comprises a sapphire substrate, a contraposition mark positioned in a first preset area of the sapphire substrate, and a plurality of APD units positioned in a second preset area of the sapphire substrate;
the alignment mark is used for indicating the packaging position of the APD array wafer, and the APD units are arranged at preset intervals.
Optionally, the APD cell comprises:
an N-type ohmic contact layer grown on the sapphire substrate;
an I-type light absorption layer grown on the N-type ohmic contact layer;
a P-type ohmic contact layer grown on the I-type light absorption layer; the I-type light absorption layer and the P-type ohmic contact layer form a mesa;
the anode is arranged on the P-type ohmic contact layer of the table top, the cathode is arranged in the exposed area of the N-type ohmic contact layer, and the passivation layer is arranged on the surface of the device layer of the solar blind ultraviolet detector;
the anode arranged on the P-type ohmic contact layer of the table top is an upper electrode of the APD array wafer, and the cathode arranged in the exposed area of the N-type ohmic contact layer is a lower electrode of the APD array wafer.
The area array back-incident solar blind ultraviolet detector and the preparation method thereof have the beneficial effects that: the embodiment of the invention packages the APD array wafer which finishes the front process on the circuit substrate with the distributed circuit in a reversed way, and then separates the sapphire substrate from the device layer of the APD array wafer by adopting the laser lift-off technology. When the device works, ultraviolet photons are emitted from the back surface and enter the PIN of the APD array wafer to realize photoelectric conversion.
Compared with the prior art, the preparation method provided by the embodiment of the invention increases the effective incident area, and simultaneously the front electrode can be made as large as possible, so that the electric field distribution in the vertical direction is more uniform, and the detection efficiency is improved. The area array back-incident solar blind ultraviolet detector obtained by the preparation method provided by the embodiment of the invention can realize large-area array leadless packaging, the process reliability is improved, the preparation method is mostly completed on a sapphire substrate, the process difficulty is low, the yield is high, the stripped sapphire substrate can be recycled after being processed, and the manufacturing cost is effectively reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing an area array back-incident solar blind ultraviolet detector according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of an APD array according to an embodiment of the present invention;
FIG. 3 is a top view of a distribution of an APD array according to one embodiment of the present invention;
FIG. 4 is a layout diagram of a circuit substrate according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an area array back-incident solar blind ultraviolet detector according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing an area array back-incident solar blind ultraviolet detector according to an embodiment of the present invention. The preparation method of the area array back-incident solar blind ultraviolet detector comprises the following steps:
s101: and preparing a device layer of the solar blind ultraviolet detector on the sapphire substrate to obtain the APD array wafer.
S102: and (3) inversely packaging the APD array wafer on the circuit substrate, and peeling off the sapphire substrate of the APD array wafer by adopting a laser peeling technology to obtain the area array back-incident solar blind ultraviolet detector.
In this embodiment, referring to fig. 2-5, the front surface of the APD array wafer is the surface on which the electrodes are disposed, and the APD array wafer is flip-chip packaged on the circuit substrate even though the electrodes of the APD array wafer are in contact with the circuit substrate.
In the present embodiment, the device layer refers to a layer of the solar blind ultraviolet detector other than the sapphire substrate.
In this embodiment, the APD array wafer subjected to the front side process is flip-chip packaged on the circuit substrate with the circuit laid thereon, and then the sapphire substrate is separated from the device layer of the APD array wafer by using a laser lift-off technique. When the device works, ultraviolet photons are emitted from the back surface and enter the PIN of the APD array wafer to realize photoelectric conversion.
Compared with the prior art, the preparation method provided by the embodiment of the invention increases the effective incident area, and simultaneously the front electrode can be made as large as possible, so that the electric field distribution in the vertical direction is more uniform, and the detection efficiency is improved. The area array back-incident solar blind ultraviolet detector obtained by the preparation method provided by the embodiment of the invention can realize large-area array leadless packaging, the process reliability is improved, the preparation method is mostly completed on a sapphire substrate, the process difficulty is low, the yield is high, the stripped sapphire substrate can be recycled after being processed, and the manufacturing cost is effectively reduced.
Optionally, as a specific implementation manner of the method for manufacturing the area array back-incident type solar blind ultraviolet detector provided in the embodiment of the present invention, a device layer of the solar blind ultraviolet detector is manufactured on a sapphire substrate to obtain an APD array wafer, which may be detailed as follows:
and manufacturing an alignment mark in a first preset area of the sapphire substrate.
And manufacturing a plurality of APD units in a second preset area of the sapphire substrate according to preset intervals to obtain an APD array wafer.
In this embodiment, the alignment mark is used to determine the packaging position of the APD array wafer on the circuit substrate, and the APD array wafer can be flip-chip packaged on the circuit substrate according to the alignment mark.
In this embodiment, the method for manufacturing the alignment mark may include: and spin-coating photoresist on the surface of the APD array wafer, carrying out electron beam metal evaporation after exposure and development, and stripping to obtain the alignment mark.
Optionally, as a specific implementation manner of the method for manufacturing the area array back-incident solar blind ultraviolet detector provided in the embodiment of the present invention, the APD array wafer is flip-chip packaged on the circuit substrate, which may be detailed as follows:
and inversely packaging the APD array wafer on the circuit substrate according to the alignment marks.
Optionally, referring to fig. 2 to fig. 5 together, wherein the upper electrode in fig. 2 to fig. 5 corresponds to the anode of the present embodiment, and the lower electrode corresponds to the cathode of the present embodiment, as a specific implementation of the method for manufacturing the area array back-incident solar blind ultraviolet detector provided by the embodiment of the present invention, the method for manufacturing the APD unit may be detailed as follows:
and sequentially growing an N-type ohmic contact layer, an I-type light absorption layer and a P-type ohmic contact layer on the sapphire substrate.
And etching the P-type ohmic contact layer and the I-type light absorption layer to form a mesa on the N-type ohmic contact layer.
And preparing a cathode in the exposed area of the N-type ohmic contact layer, preparing an anode on the P-type ohmic contact layer of the table top, and forming an ohmic contact electrode to obtain the APD unit.
In this embodiment, the N-type ohmic contact layer may be AlGaN, the I-type light absorption layer may be AlGaN, and the P-type ohmic contact layer may be GaN.
In this embodiment, the P-type ohmic contact layer and the I-type light absorption layer are etched, and a mesa is formed on the N-type ohmic contact layer, that is, the P-type ohmic contact layer and the I-type light absorption layer are etched, so that the P-type ohmic contact layer and the I-type light absorption layer form a mesa on the N-type ohmic contact layer.
The mesa photoetching method in the embodiment of the invention can be as follows: spin-coating photoresist on the surface of the APD array wafer, exposing and developing to leave the surface of the mesa region covered with the photoresist, forming a small-angle inclined mesa by adopting ICP dry etching, and etching away materials outside the mesa region until reaching the N-type ohmic contact layer to realize the isolation among all device layers.
In this embodiment, the method for manufacturing the ohmic contact electrode includes: spin-coating photoresist on the surface of the APD array wafer, sequentially performing electrode photoetching and electrode metal evaporation, and performing rapid annealing after stripping is completed to realize ohmic contact between the electrode and each device layer.
In this embodiment, the method for manufacturing an APD cell may further include a step of dielectric passivation, where the step of dielectric passivation specifically includes: and growing a passivation medium on the surface medium of the APD array wafer by plasma enhanced chemical vapor deposition to realize the surface passivation of the device. Wherein the passivation medium can be SiO2SiN, etc.
In this embodiment, the method for manufacturing an APD cell may further include a step of manufacturing an electrode and a detection window, wherein the step of manufacturing the electrode and the detection window specifically includes: spin-coating photoresist on the surface of the APD array wafer, exposing and developing to expose the electrode and the detection window area, and removing the passivation medium in the exposed area by adopting a method combining ICP dry etching and wet etching to obtain the electrode and the detector window.
Optionally, as a specific implementation manner of the method for manufacturing the area array back-incident solar blind ultraviolet detector provided in the embodiment of the present invention, the laser lift-off technology is used to lift off the sapphire substrate of the APD array wafer, which may be detailed as follows:
and irradiating the sapphire substrate of the APD array wafer by adopting laser with preset photon energy, so that the laser penetrates through the sapphire substrate and is absorbed by an ohmic contact layer in contact with the sapphire substrate, and thermal decomposition is carried out to generate gallium and nitrogen.
And heating the APD array wafer on a heating plate with a preset temperature to liquefy the metal gallium, and separating a device layer of the solar blind ultraviolet detector from the sapphire substrate.
Optionally, as a specific implementation manner of the method for manufacturing the area array back-incident solar blind ultraviolet detector provided by the embodiment of the present invention, the preset photon energy is greater than the band gap energy of the first surface layer and less than the band gap energy of the sapphire substrate.
Optionally, as a specific implementation manner of the method for manufacturing the area array back-incident solar blind ultraviolet detector provided by the embodiment of the present invention, the preset temperature is greater than 40 ℃.
In order to achieve the above object, the present invention further provides an area array back-incident solar blind ultraviolet detector, referring to fig. 2 to 5, including:
the APD array wafer is reversely packaged on the circuit substrate.
The upper electrode of the APD array wafer with the sapphire substrate being stripped is in point contact connection with the upper electrode contact point of the circuit substrate. And the lower electrode of the APD array wafer with the sapphire substrate stripped is in contact connection with the lower electrode contact point of the circuit substrate.
Optionally, as a specific implementation manner of the area array back-incident solar blind ultraviolet detector provided in the embodiment of the present invention, the APD array wafer includes:
the device comprises a sapphire substrate, a contraposition mark located in a first preset area of the sapphire substrate, and a plurality of APD units located in a second preset area of the sapphire substrate.
The alignment mark is used for indicating the packaging position of the APD array wafer, and the APD units are arranged at preset intervals.
Optionally, as a specific implementation manner of the area array back-incident solar blind ultraviolet detector provided in the embodiment of the present invention, the APD unit includes:
and an N-type ohmic contact layer grown on the sapphire substrate.
And an I-type light absorption layer grown on the N-type ohmic contact layer.
And a P-type ohmic contact layer grown on the I-type light absorption layer. Wherein the I-type light absorption layer and the P-type ohmic contact layer form a mesa.
The solar blind ultraviolet detector comprises an anode arranged on a P-type ohmic contact layer of the table top, a cathode arranged in an exposed area of an N-type ohmic contact layer and a passivation layer arranged on the surface of a device layer of the solar blind ultraviolet detector.
In this embodiment, the anode disposed on the P-type ohmic contact layer of the mesa is the upper electrode of the APD array wafer, and the cathode disposed in the exposed region of the N-type ohmic contact layer is the lower electrode of the APD array wafer.
While the invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A preparation method of an area array back-incident solar blind ultraviolet detector is characterized by comprising the following steps:
preparing a device layer of a solar blind ultraviolet detector on a sapphire substrate to obtain an APD array wafer;
and reversely packaging the APD array wafer on a circuit substrate, and stripping the sapphire substrate of the APD array wafer by adopting a laser stripping technology to obtain the area array back-incident solar blind ultraviolet detector.
2. The method for manufacturing the area array back-incident solar blind ultraviolet detector according to claim 1, wherein the step of manufacturing a device layer of the solar blind ultraviolet detector on a sapphire substrate to obtain an APD array wafer comprises the following steps:
manufacturing an alignment mark in a first preset area of the sapphire substrate;
and manufacturing a plurality of APD units in a second preset area of the sapphire substrate according to preset intervals to obtain an APD array wafer.
3. The method for preparing the area array back-incident solar blind ultraviolet detector according to claim 2, wherein the flip-chip packaging of the APD array wafer on a circuit substrate comprises:
and inversely packaging the APD array wafer on the circuit substrate according to the alignment mark.
4. The method for preparing the area array back-incident solar blind ultraviolet detector according to claim 2, wherein the method for preparing the APD unit comprises the following steps:
sequentially growing an N-type ohmic contact layer, an I-type light absorption layer and a P-type ohmic contact layer on a sapphire substrate;
etching the P-type ohmic contact layer and the I-type light absorption layer to form a table top on the N-type ohmic contact layer;
and preparing a cathode in the exposed area of the N-type ohmic contact layer, preparing an anode on the P-type ohmic contact layer of the table top, and forming an ohmic contact electrode to obtain the APD unit.
5. The method for manufacturing the area array back-incident solar blind ultraviolet detector according to claim 1, wherein the step of peeling off the sapphire substrate of the APD array wafer by using a laser peeling-off technology comprises the following steps:
irradiating the sapphire substrate of the APD array wafer by adopting laser with preset photon energy, so that the laser penetrates through the sapphire substrate and is absorbed by an ohmic contact layer in contact with the sapphire substrate to generate thermal decomposition, and generating gallium metal and nitrogen;
and heating the APD array wafer on a heating plate with a preset temperature to liquefy the metal gallium, and separating a device layer of the solar blind ultraviolet detector from the sapphire substrate.
6. The method for preparing the area array back-incident solar blind ultraviolet detector according to claim 5, wherein the preset photon energy is larger than the band gap energy of the first surface layer and smaller than the band gap energy of the sapphire substrate.
7. The method for preparing the area array back-incident solar-blind ultraviolet detector as claimed in claim 5, wherein the preset temperature is higher than 40 ℃.
8. An area array back-incident solar blind ultraviolet detector, comprising:
the APD array wafer is reversely packaged on the circuit substrate;
the upper electrode of the APD array wafer for stripping the sapphire substrate is in point contact connection with the upper electrode contact point of the circuit substrate; and the lower electrode of the APD array wafer with the stripped sapphire substrate is in contact connection with the lower electrode contact point of the circuit substrate.
9. The area array back-incident solar-blind ultraviolet detector of claim 8, wherein the APD array wafer comprises:
the device comprises a sapphire substrate, a contraposition mark positioned in a first preset area of the sapphire substrate, and a plurality of APD units positioned in a second preset area of the sapphire substrate;
the alignment mark is used for indicating the packaging position of the APD array wafer, and the APD units are arranged at preset intervals.
10. The area array back-incident solar-blind ultraviolet detector of claim 8, wherein the APD cell comprises:
an N-type ohmic contact layer grown on the sapphire substrate;
an I-type light absorption layer grown on the N-type ohmic contact layer;
a P-type ohmic contact layer grown on the I-type light absorption layer; the I-type light absorption layer and the P-type ohmic contact layer form a mesa;
the anode is arranged on the P-type ohmic contact layer of the table top, the cathode is arranged in the exposed area of the N-type ohmic contact layer, and the passivation layer is arranged on the surface of the device layer of the solar blind ultraviolet detector;
the anode arranged on the P-type ohmic contact layer of the table top is an upper electrode of the APD array wafer, and the cathode arranged in the exposed area of the N-type ohmic contact layer is a lower electrode of the APD array wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010711529.XA CN111933747A (en) | 2020-07-22 | 2020-07-22 | Surface array back-incident solar blind ultraviolet detector and preparation method thereof |
Applications Claiming Priority (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490257A (en) * | 2020-12-15 | 2021-03-12 | 南京工业职业技术大学 | GaN-based hybrid three-dimensional imaging and distance measuring device |
| CN113130676A (en) * | 2021-04-16 | 2021-07-16 | 中国科学院半导体研究所 | Focal plane infrared detector chip, detector and preparation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012129755A1 (en) * | 2011-03-25 | 2012-10-04 | 南京大学 | Imaging array unit using ultra-violet avalanche photo diodes, application method thereof, and imaging array composed of the same |
| CN106684203A (en) * | 2015-11-09 | 2017-05-17 | 中蕊（武汉）光电科技有限公司 | GaN (Gallium Nitrogen) avalanche photodiode assembly and manufacturing method thereof |
| CN107180890A (en) * | 2017-05-12 | 2017-09-19 | 南京紫科光电科技有限公司 | A kind of back-illuminated type narrow bandpass solar blind ultraviolet detector and preparation method thereof |
| CN109256305A (en) * | 2018-08-31 | 2019-01-22 | 中国电子科技集团公司第五十五研究所 | Transmission-type AlGaN ultraviolet light photo cathode preparation method based on substrate desquamation |
| CN109659398A (en) * | 2018-12-26 | 2019-04-19 | 中南大学 | A kind of AlGaN base carries on the back the preparation method into formula MSM ultraviolet focal-plane array imaging system |
| CN110047968A (en) * | 2019-04-17 | 2019-07-23 | 中南大学 | A kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector |
-
2020
- 2020-07-22 CN CN202010711529.XA patent/CN111933747A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012129755A1 (en) * | 2011-03-25 | 2012-10-04 | 南京大学 | Imaging array unit using ultra-violet avalanche photo diodes, application method thereof, and imaging array composed of the same |
| CN106684203A (en) * | 2015-11-09 | 2017-05-17 | 中蕊（武汉）光电科技有限公司 | GaN (Gallium Nitrogen) avalanche photodiode assembly and manufacturing method thereof |
| CN107180890A (en) * | 2017-05-12 | 2017-09-19 | 南京紫科光电科技有限公司 | A kind of back-illuminated type narrow bandpass solar blind ultraviolet detector and preparation method thereof |
| CN109256305A (en) * | 2018-08-31 | 2019-01-22 | 中国电子科技集团公司第五十五研究所 | Transmission-type AlGaN ultraviolet light photo cathode preparation method based on substrate desquamation |
| CN109659398A (en) * | 2018-12-26 | 2019-04-19 | 中南大学 | A kind of AlGaN base carries on the back the preparation method into formula MSM ultraviolet focal-plane array imaging system |
| CN110047968A (en) * | 2019-04-17 | 2019-07-23 | 中南大学 | A kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector |
Non-Patent Citations (1)
| Title |
|---|
| 陈育明 等: "《节能照明光源新进展》", 31 January 2016 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490257A (en) * | 2020-12-15 | 2021-03-12 | 南京工业职业技术大学 | GaN-based hybrid three-dimensional imaging and distance measuring device |
| CN112490257B (en) * | 2020-12-15 | 2021-11-09 | 南京工业职业技术大学 | GaN-based hybrid three-dimensional imaging and distance measuring device |
| CN113130676A (en) * | 2021-04-16 | 2021-07-16 | 中国科学院半导体研究所 | Focal plane infrared detector chip, detector and preparation method |
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