CN110047968A - A kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector - Google Patents
A kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector Download PDFInfo
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- CN110047968A CN110047968A CN201910308276.9A CN201910308276A CN110047968A CN 110047968 A CN110047968 A CN 110047968A CN 201910308276 A CN201910308276 A CN 201910308276A CN 110047968 A CN110047968 A CN 110047968A
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002023 wood Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000013508 migration Methods 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract description 2
- 230000004044 response Effects 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004159 blood analysis Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
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- 230000035800 maturation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
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- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of preparation methods of AlGaN base 3D flip chip bonding MSM array ultraviolet detector, belong to technical field of semiconductors, comprising: (1) be epitaxially grown on the substrate AlXGa1‑XN ultraviolet light absorbing layer；(2) in AlXGa1‑XPhotoetching is carried out on N ultraviolet light absorbing layer, forms groove；(3) in AlXGa1‑XInterdigital electrode is deposited in the groove of N ultraviolet light absorbing layer；(4) substrate back is polished；(5) substrate circuit is made using domain on substrate；(6) the production welding micro convex point on substrate circuit；(7) ultraviolet detector is reversed, the region pad at interdigital electrode both ends and dimpling spot welding is connected；Manufacture craft of the present invention is simple, and face-down bonding technique is mature, at low cost, easy to implement, can be with large-scale promotion；The present invention is deposited in absorbed layer internal groove by interdigital electrode, reduces photo-generated carrier transit time, under DC Electric Field, improves the migration velocity and collection efficiency of carrier, to improve detector sensitivity, reduces the response time.
Description
Technical field
The invention belongs to technical field of semiconductors, are related to a kind of preparation method of AlGaN base ultraviolet detector, in particular to
A kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector.
Background technique
Ultraviolet detector ultraviolet radiation measurement, ozone monitoring, atmosphere pollution monitoring, space communication, aircraft guidance,
The fields such as blood analysis, mercury vapor lamp disinfection monitoring are widely used.Common ultraviolet detector mainly has photoconduction type, Schottky
Type, MSM type, PIN type, 5 kinds of avalanche-type, photoconduction type photoelectric current and dark current are all relatively large, but photoelectric current and dark current it
It is smaller, poor sensitivity；Schottky type detector dark current is small, high sensitivity, but needs extra electric field that could use；MSM type
Detector production is simple, and dark current is small, but generally is normal incidence, and metal electrode can stop and absorb a part of light；PIN type is visited
Device, responsiveness and high sensitivity are surveyed, but device fabrication is complicated；Avalanche detector needs additional one very big reverse-biased electricity
?.Since semiconductor ultraviolet detection device photoelectric current is typically small, in the detection of single gadget, the fixation of device, I/O electrode
The factors such as position, probe current be small can all reduce signal-to-noise ratio, responsiveness and the sensitivity of ultraviolet detector, to restrict ultraviolet spy
Survey the large-scale application of device.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector, with
Improve the responsiveness and sensitivity of ultraviolet detector.
The preparation method of this AlGaN base 3D flip chip bonding MSM array ultraviolet detector provided by the invention, including following step
It is rapid:
(1) it is epitaxially grown on the substrate AlXGa1-XN ultraviolet light absorbing layer；
(2) in AlXGa1-XPhotoetching, etching groove are carried out on N ultraviolet light absorbing layer；
(3) in AlXGa1-XInterdigital electrode is deposited in the groove of N ultraviolet light absorbing layer, interdigital electrode includes the interdigital electricity in the left side
Pole, the right interdigital electrode, two interdigital electrode both ends are designed with the region large area pad, obtain ultraviolet detector；
(4) substrate back is polished；
(5) substrate circuit is made using domain on substrate；
(6) the production welding micro convex point on substrate circuit；
(7) ultraviolet detector is reversed, the region pad at interdigital electrode both ends and dimpling spot welding is connected, on substrate circuit
Multiple ultraviolet detectors are welded, the AlGaN base 3D flip chip bonding MSM array ultraviolet detector is obtained.
Preferably, the epitaxial growth uses metal organic vapor (MOCVD), molecular beam epitaxy in step (1)
(MBE), any one in physical vapor deposition (PVD) and ion beam epitaxy (IBE).
Preferably, in step (1), the substrate using sapphire, silica, aluminium nitride, calcirm-fluoride, titanium nitride,
One of silicon, gallium nitride.
Preferably, the interdigital electrode is one or more by Ni, Au, Pt, Cu, Al, Ag, Cr, In etc. in step (3)
Material cladding forms, and interdigital electrode and ultraviolet light absorbing layer form Schottky contacts or Ohmic contact.
Preferably, the substrate back polishing method uses physical mechanical grinding and polishing, chemical polishing in step (4)
One of.
Preferably, the substrate uses one of silicon, ceramics in step (5), there is certain support and heat radiation energy
Power.
Preferably, the substrate circuit is used using one of Ag, Al, Ni, Au and Cu or a variety of in step (5)
Metal is made.
Preferably, the welding micro convex point is using one of Ag, Al, Ni, Au, Sn, In, Pt and Cr in step (6)
Or various metals composite material, it is made by alignment, vapor deposition, annealing.
Preferably, in step (7), using hot pressing or ultrasonic means by the region pad of interdigital electrode and dimpling spot welding
Even.
The present invention also provides a kind of AlGaN base 3D flip chip bonding MSM array ultraviolet detector, including substrate, below substrate according to
It is secondary to be provided with AlXGa1-XN ultraviolet light absorbing layer, interdigital electrode, flip chip bonding micro convex point, substrate circuit and substrate；
The interdigital electrode is deposited on AlXGa1-XIn N ultraviolet light absorbing layer groove, realize that photo-generated carrier is quickly collected；
The substrate, AlXGa1-XN ultraviolet light absorbing layer and interdigital electrode form ultraviolet detector；
The flip chip bonding micro convex point is set on substrate circuit, for connecting interdigital electrode and substrate circuit；The substrate
Circuit is set on substrate, and multiple ultraviolet detectors are welded on substrate circuit.
Further, the AlXGa1-XN ultraviolet light absorbing layer with a thickness of 0.2~3 μm.
Advantageous effects of the invention are as follows:
The preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector of the present invention, device making technics are simple,
Welding equipment technology maturation, it is at low cost, it is easy to implement, it can be with large-scale promotion.
This AlGaN base 3D flip chip bonding MSM array ultraviolet detector provided by the invention, is deposited on suction by interdigital electrode
It receives in layer internal groove, reduces photo-generated carrier transit time, under DC Electric Field, improve the migration velocity of carrier
And collection efficiency reduces the response time to improve detector sensitivity.
Ultraviolet detector of the present invention, by the design of epitaxial structure, ultraviolet light back incidence avoids electrode from blocking light, subtracts
Few even to avoid the absorption of buffer layer, electrode to ultraviolet light, to improve the responsiveness of ultraviolet detector, device uses flip chip bonding
Form array on substrate circuit, interconnection line is short, parasitic capacitance and parasitic inductance are small, facilitates the defeated of device heat dissipation and electric current
Out, the I/O electrode of chip can be arbitrarily arranged in chip surface, and packaging density is high, easy to spread.
Detailed description of the invention
Fig. 1 is epitaxial growth Al in Sapphire SubstrateXGa1-XEtching groove makes interdigital electricity again after N ultraviolet light absorbing layer
Pole, the structural schematic diagram being then inverted on substrate.
Fig. 2 is the top view of device before AlGaN base 3D flip chip bonding MSM array ultraviolet detector face-down bonding.
Fig. 3 is the A-A cross-sectional view of device before AlGaN base 3D flip chip bonding MSM array ultraviolet detector face-down bonding.
Fig. 4 is that top view after circuit and micro convex point is made on substrate.
Fig. 5 is the structural schematic diagram of AlGaN base 3D flip chip bonding MSM array in embodiment 1.
In figure: 1-substrate；2—AlXGa1-XN ultraviolet light absorbing layer；3-interdigital electrodes；301-left side interdigital electrodes；
302-the right interdigital electrodes；4-flip chip bonding micro convex points；5-substrate circuits；6-substrates.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, rather than whole embodiments, based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The present invention program is further elaborated with reference to the accompanying drawings and examples.
The present invention provides a kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector, including following step
It is rapid:
(1) the epitaxial growth Al on substrate 1XGa1-XN ultraviolet light absorbing layer 2；
(2) in AlXGa1-XPhotoetching, etching groove are carried out on N ultraviolet light absorbing layer 2；
(3) in AlXGa1-XInterdigital electrode 3 is deposited in the groove of N ultraviolet light absorbing layer, interdigital electrode 3 includes that the left side is interdigital
Electrode 301, the right interdigital electrode 302, two interdigital electrode both ends are designed with the region large area pad and obtain purple as Figure 2-3
External detector；
(4) 1 back side of substrate is polished；
(5) substrate circuit 5 is made using domain on substrate 6；
(6) the production welding micro convex point 4 on substrate circuit 5, as shown in Figure 4；
(7) ultraviolet detector is reversed, the region pad at interdigital electrode both ends and the weldering of micro convex point 4 is connected, on substrate circuit
Multiple ultraviolet detectors are welded, obtain the AlGaN base 3D flip chip bonding MSM array ultraviolet detector, as shown in Figure 1.
Embodiment 1
The present invention provides a kind of AlGaN base ultraviolet detector and preparation method thereof, comprising the following steps:
(1) selecting diameter is 2 inches of plane (0001) surface sapphire as substrate, and thickness is about 400 μm, is used
MOCVD method grows Al on sapphire0.32Ga0.68N UV absorbing layer, thickness are about 400nm, and wherein Al group is divided into 0.32, Al
Group be divided into the wavelength of the forbidden bandwidth correspondence ultraviolet light to be detected of 0.32 AlGaN, TMAl and TMGa respectively as the source Al and
The source Ga, silane SiH4As the source Si, realize to Al0.32Ga0.68The doping of N ultraviolet light absorbing layer, Al0.32Ga0.68The forbidden band of N is wide
Degree corresponds to the wavelength for the ultraviolet light to be detected, about 280nm；
(2) in Al0.32Ga0.68N UV Absorption layer surface carries out photoetching, etches interdigital electrode groove, ditch using ICP
Groove depth is 200nm；
(3) deposited by electron beam evaporation deposition Ni/Au interdigital electrode (20/100nm), metal interdigital electrode and ultraviolet light absorbing layer
Schottky contacts are formed, interdigital electrode includes left side interdigital electrode, the right interdigital electrode, and unit size is 100 μm of 100 μ m,
The width and spacing of interdigital electrode are 5 μm, and the region electrode pad is 100 × 100 μm, and then stripping photoresist, obtains ultraviolet spy
Survey device；
(4) sapphire backsides are polished using the method for mechanical lapping, reduces scattering of the rough surface to incident uv；
(5) micro convex point is made on substrate circuit using production substrate circuit on substrate, micro convex point position corresponds to 3D
The region ultraviolet detector interdigital electrode pad；
(6) ultraviolet detector is turned around, is connected the region pad of interdigital electrode and dimpling spot welding using ultrasound and hot pressing,
Multiple ultraviolet detectors are welded on substrate circuit, finally obtained AlGaN base 3D flip chip bonding MSM array ultraviolet detector, such as Fig. 5
It is shown.
Above-mentioned AlGaN base 3D flip chip bonding MSM array ultraviolet detector, including substrate, substrate lower section are disposed with
AlXGa1-XN ultraviolet light absorbing layer, interdigital electrode, flip chip bonding micro convex point, substrate circuit and substrate；Interdigital electrode is deposited on
AlXGa1-XIn N ultraviolet light absorbing layer groove, realize that photo-generated carrier is quickly collected；Substrate, AlXGa1-XN ultraviolet light absorbing layer and
Interdigital electrode forms ultraviolet detector；Flip chip bonding micro convex point is set on substrate circuit, for connecting interdigital electrode and substrate electricity
Road；Substrate circuit is set on substrate, and multiple ultraviolet detectors are welded on substrate circuit.
The above is only a preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-mentioned implementation
Example.To those of ordinary skill in the art, obtained improvement and change in the case where not departing from the technology of the present invention concept thereof
It changes and also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector, which comprises the following steps:
(1) it is epitaxially grown on the substrate AlXGa1-XN ultraviolet light absorbing layer；
(2) in AlXGa1-XPhotoetching, etching groove are carried out on N ultraviolet light absorbing layer；
(3) in AlXGa1-XInterdigital electrode is deposited in the groove of N ultraviolet light absorbing layer, interdigital electrode includes left side interdigital electrode, the right side
Side interdigital electrode, two interdigital electrode both ends are designed with the region large area pad, obtain ultraviolet detector；
(4) substrate back is polished；
(5) substrate circuit is made using domain on substrate；
(6) the production welding micro convex point on substrate circuit；
(7) ultraviolet detector is reversed, the region pad at interdigital electrode both ends and dimpling spot welding is connected, welded on substrate circuit
Multiple ultraviolet detectors obtain the AlGaN base 3D flip chip bonding MSM array ultraviolet detector.
2. the preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 1, which is characterized in that
In step (1), the epitaxial growth using metal organic vapor (MOCVD), molecular beam epitaxy (MBE), outside physical vapor
Prolong any one in (PVD) and ion beam epitaxy (IBE).
3. the preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 1, which is characterized in that
In step (1), the substrate uses one of sapphire, silica, aluminium nitride, calcirm-fluoride, titanium nitride, silicon, gallium nitride.
4. the preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 1, which is characterized in that
In step (3), the interdigital electrode is formed by one or more Material claddings such as Ni, Au, Pt, Cu, Al, Ag, Cr, In, interdigital
Electrode and ultraviolet light absorbing layer form Schottky contacts or Ohmic contact.
5. the preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 1, which is characterized in that
In step (4), the substrate back polishing method uses one of physical mechanical grinding and polishing, chemical polishing.
6. the preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 1, which is characterized in that
In step (5), the substrate uses one of silicon, ceramics；The substrate circuit is used using in Ag, Al, Ni, Au and Cu
One or more metals be made.
7. the preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 1, which is characterized in that
In step (6), the welding micro convex point is using one of Ag, Al, Ni, Au, Sn, In, Pt and Cr or various metals composite wood
Material, is made by alignment, vapor deposition, annealing.
8. the preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 1, which is characterized in that
In step (7), the region pad of interdigital electrode and dimpling spot welding are connected using hot pressing or ultrasonic means.
9. the ultraviolet spy of AlGaN base 3D flip chip bonding MSM array that preparation method described according to claim 1~any one of 8 obtains
Survey device, including substrate, which is characterized in that be disposed with Al below substrateXGa1-XN ultraviolet light absorbing layer, interdigital electrode, upside-down mounting
Weld micro convex point, substrate circuit and substrate；
The interdigital electrode is deposited on AlXGa1-XIn N ultraviolet light absorbing layer groove, realize that photo-generated carrier is quickly collected；The lining
Bottom, AlXGa1-XN ultraviolet light absorbing layer and interdigital electrode form ultraviolet detector；
The flip chip bonding micro convex point is set on substrate circuit, for connecting interdigital electrode and substrate circuit；The substrate circuit
It is set on substrate, multiple ultraviolet detectors is welded on substrate circuit.
10. AlGaN base 3D flip chip bonding MSM array ultraviolet detector according to claim 9, which is characterized in that described
AlXGa1-XN ultraviolet light absorbing layer with a thickness of 0.02~3 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910308276.9A CN110047968A (en) | 2019-04-17 | 2019-04-17 | A kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910308276.9A CN110047968A (en) | 2019-04-17 | 2019-04-17 | A kind of preparation method of AlGaN base 3D flip chip bonding MSM array ultraviolet detector |
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| CN113113506A (en) * | 2021-03-26 | 2021-07-13 | 中山大学 | III-nitride gain type photoelectric detector and preparation method thereof |
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| CN111933747A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Surface array back-incident solar blind ultraviolet detector and preparation method thereof |
| CN112086436A (en) * | 2020-09-21 | 2020-12-15 | 中国科学院长春光学精密机械与物理研究所 | Solar blind ultraviolet focal plane imaging detector and manufacturing method thereof |
| CN114530519A (en) * | 2020-11-23 | 2022-05-24 | 中国科学院宁波材料技术与工程研究所 | Self-driven MSM ultraviolet detector and preparation method thereof |
| CN114530519B (en) * | 2020-11-23 | 2024-04-02 | 中国科学院宁波材料技术与工程研究所 | Self-driven MSM ultraviolet detector and preparation method thereof |
| CN112945377A (en) * | 2021-02-01 | 2021-06-11 | 河北工业大学 | Deep ultraviolet photoelectric detector based on plasma excimer |
| CN113113506A (en) * | 2021-03-26 | 2021-07-13 | 中山大学 | III-nitride gain type photoelectric detector and preparation method thereof |
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Application publication date: 20190723 |