CN112086436A - Solar blind ultraviolet focal plane imaging detector and manufacturing method thereof - Google Patents

Solar blind ultraviolet focal plane imaging detector and manufacturing method thereof Download PDF

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Publication number
CN112086436A
CN112086436A CN202010995497.0A CN202010995497A CN112086436A CN 112086436 A CN112086436 A CN 112086436A CN 202010995497 A CN202010995497 A CN 202010995497A CN 112086436 A CN112086436 A CN 112086436A
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layer
hole
metal layer
focal plane
solar
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宋航
陈一仁
张志伟
蒋红
缪国庆
李志明
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application discloses a solar blind ultraviolet focal plane imaging detector and a manufacturing method thereof, wherein the detector comprises a detector array, a reading circuit, a passivation layer, a metal layer with a first through hole, an insulating layer with a second through hole, a filler layer and a connecting column; the metal layer is positioned on the lower surface of the passivation layer, the first through hole corresponds to the P-type electrode in the detector array, and the size of the first through hole is smaller than that of the P-type electrode, so that the metal layer corresponds to the mesa array gap in the detector array and the region of the mesa array surface which is not covered by the P-type electrode; the insulating layer is arranged on the lower surface of the metal layer and in the first through hole, the second through hole corresponds to the first through hole, and the size of the second through hole is smaller than that of the first through hole. An insulating layer in the solar blind ultraviolet focal plane imaging detector prevents a metal layer and a reading circuit from being short-circuited, and the metal layer prevents visible light from being incident on the reading circuit through an array table top gap, so that the solar blind/visible suppression ratio of the solar blind ultraviolet focal plane imaging detector is improved.

Description

Solar blind ultraviolet focal plane imaging detector and manufacturing method thereof
Technical Field
The application relates to the technical field of photoelectric detectors, in particular to a solar blind ultraviolet focal plane imaging detector and a manufacturing method thereof.
Background
The structural schematic diagram of the solar-blind ultraviolet focal plane imaging detector is shown in fig. 1, and the solar-blind ultraviolet focal plane imaging detector comprises a detector array, a reading circuit, a filler layer, a passivation layer with an opening, and a connecting column for connecting the detector array and the reading circuit, wherein the detector array comprises a substrate 1, a nucleation layer 2, a superlattice layer 3, an intrinsic AlGaN layer 4, an N-type AlGaN layer 5, a mesa array formed by an I-type AlGaN layer 6 and a P-type AlGaN layer 7, a common N-type electrode 8 and a pixel P-type electrode 9, the detector array is used as a photosensitive part for realizing the conversion of photoelectric signals of the solar-blind ultraviolet focal plane imaging detector, and the reading circuit is used for reading the photoelectric signals.
The substrate in the detector array can penetrate light from visible light to near infrared wave band, and the reading circuit is a good visible light/near infrared photoelectric imaging detector and has sensitive spectral response characteristic to light with wavelength of more than 350nm, so that when the solar blind ultraviolet focal plane imaging detector works, ambient light (mainly visible light) penetrates through a pixel gap (a table array gap) of the detector array to be transmitted to the reading circuit, the reading circuit generates visible light spectral response, the solar blind ultraviolet focal plane imaging detector is low in solar blind/visible rejection ratio, and the advantage of solar blind ultraviolet intrinsic cutoff of AlGaN material cannot be played.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide a solar blind ultraviolet focal plane imaging detector and a manufacturing method thereof, so as to improve the solar blind/visible suppression ratio of the solar blind ultraviolet focal plane imaging detector.
In order to solve the technical problem, the application provides a solar blind ultraviolet focal plane imaging detector, which comprises a detector array, a reading circuit, a passivation layer, a metal layer with a first through hole, an insulating layer with a second through hole, a filler layer and a connecting column;
the metal layer is located on the lower surface of the passivation layer, the first through hole corresponds to a P-type electrode in the detector array, and the size of the first through hole is smaller than that of the P-type electrode, so that the metal layer corresponds to a mesa array gap in the detector array and a region, which is not covered by the P-type electrode, of the mesa array surface;
the insulating layer is located on the lower surface of the metal layer and in the first through hole, the second through hole corresponds to the first through hole, and the size of the second through hole is smaller than that of the first through hole.
Optionally, the metal layer is an aluminum layer or a gold layer.
Optionally, the insulating layer is a silicon dioxide layer or a silicon nitride layer.
Optionally, the readout circuit is a CMOS readout circuit or a CCD readout circuit.
Optionally, the thickness of the metal layer ranges from 200nm to 300nm, inclusive.
Optionally, the thickness of the insulating layer ranges from 200nm to 1 μm, inclusive.
The application also provides a preparation method of the solar blind ultraviolet focal plane imaging detector, which comprises the following steps:
obtaining a detector array;
preparing a passivation layer on the upper surface of the detector array;
coating a photoresist layer on the upper surface of the passivation layer, and carrying out exposure and development to enable the photoresist layer to correspond to a mesa array gap in the detector array and an area on the mesa array surface which is not covered by the P-type electrode to form a hollow area, wherein the size of the photoresist layer is smaller than that of the corresponding P-type electrode;
preparing a metal layer on the upper surface of the photoresist layer, and removing the photoresist layer and the metal layer laminated on the surface of the photoresist layer to enable the metal layer to be provided with a first through hole;
preparing an insulating layer on the upper surface of the metal layer;
etching the insulating layer and the passivation layer positioned in the first through hole to form a second through hole, wherein the size of the second through hole is smaller than that of the first through hole, and the second through hole is stopped on the surface of the P-type electrode to obtain a processed detector array;
and connecting the readout circuit and the processed detector array through connecting columns by using a flip chip bonding technology, and forming a filler layer between the readout circuit and the insulating layer.
Optionally, the preparing the metal layer on the upper surface of the photoresist layer includes:
and preparing the metal layer on the upper surface of the photoresist layer by using an electron beam evaporation process or a magnetron sputtering process.
Optionally, the preparing the insulating layer on the upper surface of the metal layer includes:
and preparing the insulating layer on the upper surface of the metal layer by utilizing a plasma enhanced chemical vapor deposition process.
Optionally, the etching the insulating layer and the passivation layer in the first through hole to form a second through hole includes:
and etching the insulating layer and the passivation layer positioned in the first through hole by utilizing photoetching and plasma etching processes to form the second through hole.
The solar blind ultraviolet focal plane imaging detector comprises a detector array, a reading circuit, a passivation layer, a metal layer with a first through hole, an insulating layer with a second through hole, a filler layer and a connecting column; the metal layer is located on the lower surface of the passivation layer, the first through hole corresponds to a P-type electrode in the detector array, and the size of the first through hole is smaller than that of the P-type electrode, so that the metal layer corresponds to a mesa array gap in the detector array and a region, which is not covered by the P-type electrode, of the mesa array surface; the insulating layer is located on the lower surface of the metal layer and in the first through hole, the second through hole corresponds to the first through hole, and the size of the second through hole is smaller than that of the first through hole.
Therefore, the solar blind ultraviolet focal plane imaging detector comprises a detector array, a reading circuit, a passivation layer filler layer and a connecting column, and further comprises a metal layer with a first through hole and an insulating layer with a second through hole, the insulating layer prevents the metal layer and the reading circuit from being short-circuited, the metal layer corresponds to a table top array gap in the detector array and an area, which is not covered by a P-type electrode, of the table top array surface, visible light is prevented from being incident on the reading circuit through the array table top gap, visible light spectrum response of the reading circuit is prevented, and the solar blind/visible suppression ratio of the solar blind ultraviolet focal plane imaging detector is improved.
In addition, the application also provides a manufacturing method of the solar blind ultraviolet focal plane imaging detector with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a solar blind ultraviolet focal plane imaging detector in the prior art;
fig. 2 is a schematic structural diagram of a solar blind ultraviolet focal plane imaging detector provided in an embodiment of the present application;
fig. 3 is a comparison of transmission spectra for the solar-blind ultraviolet focal plane imaging detector of the present application and the prior art solar-blind ultraviolet focal plane imaging detector;
fig. 4 is a flowchart of a method for manufacturing a solar blind ultraviolet focal plane imaging detector according to an embodiment of the present disclosure;
in the figure, 1, a substrate, 2, a nucleation layer, a superlattice layer 3, 4, an intrinsic AlGaN layer, 5, an N-type AlGaN layer, 6, an I-type AlGaN layer, 7, a P-type AlGaN layer, 8, a common N-type electrode, 9, a pixel P-type electrode, 10, a passivation layer, 11, a connecting column, 12, a readout circuit, 13, a filler layer, 14, a pixel upper electrode, 15, a metal layer and 16, an insulating layer.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
AlGaN is a direct wide bandgap semiconductor material which is stable in physical and chemical properties and adjustable in energy band gap, can realize solar blind ultraviolet intrinsic cutoff by adjusting the Al component to be higher than 45%, and is an ideal material for developing a solar blind ultraviolet focal plane imaging detector which is all solid, high in solar blind/visible rejection ratio and radiation-resistant.
As described in the background section, in the conventional solar-blind ultraviolet focal plane imaging detector, ambient light penetrates through the mesa array gap of the detector array and enters the readout circuit, so that the readout circuit generates visible light spectral response, and the solar-blind ultraviolet focal plane imaging detector has low solar-blind/visible rejection ratio.
In view of this, the present application provides a solar-blind ultraviolet focal plane imaging detector, please refer to fig. 2, and fig. 2 is a schematic structural diagram of the solar-blind ultraviolet focal plane imaging detector provided in an embodiment of the present application, where the solar-blind ultraviolet focal plane imaging detector includes:
the detector array, the readout circuit 12, the passivation layer 10, the metal layer 15 with the first through hole, the insulating layer 16 with the second through hole, the filler layer 13, and the connection post 11;
the metal layer 15 is located on the lower surface of the passivation layer 10, the first through hole corresponds to a P-type electrode in the detector array, and the size of the first through hole is smaller than that of the P-type electrode, so that the metal layer 15 corresponds to a mesa array gap in the detector array and a region on the mesa array surface which is not covered by the P-type electrode;
the insulating layer 16 is located on the lower surface of the metal layer 15 and in the first through hole, the second through hole corresponds to the first through hole, and the size of the second through hole is smaller than that of the first through hole.
The detector array comprises a substrate 1, a nucleating layer 2, a superlattice layer 3, an intrinsic AlGaN layer 4, an N-type AlGaN layer 5, a table-board array formed by an I-type AlGaN layer 6 and a P-type AlGaN layer 7, a common N-type electrode 8 and a pixel P-type electrode 9, wherein the substrate 1 is a double-sided polished sapphire substrate, the nucleating layer 2 is an AlN layer, and the superlattice layer 3 is an AlGaN/AlN layer.
The readout circuit 12 is provided with a pixel upper electrode 14, the pixel upper electrode 14 is connected with a connecting column 11, the pixel P-type electrode and the common N-type electrode are also connected with the connecting column 11, and the detector array and the readout circuit 12 are integrated in a mixed mode through connection of the connecting column 11. The material of the connection post 11 is indium, and the material of the filler layer 13 is epoxy resin.
It should be noted that the type of the readout circuit 12 is not specifically limited in this application, and for example, the readout circuit 12 is a CMOS (Complementary Metal Oxide Semiconductor) readout circuit 12 or a CCD (Charge-coupled Device) readout circuit 12.
The purpose of setting up first through-hole and corresponding P type electrode and the size of first through-hole is less than the size of P type electrode in this application is, guarantees that metal level 15 covers mesa array clearance and mesa array surface in the detector array completely not by the region that P type electrode covered avoids having light to shine on reading out circuit 12. Optionally, the distance between the edge of the first through hole and the edge of the P-type electrode is between 1 μm and 2 μm.
Preferably, the metal layer 15 is an aluminum layer or a gold layer, and since the reflectivity of gold and aluminum to light is high, light in the mesa array gap can be better shielded, wherein the cost of the aluminum layer is lower.
Optionally, the thickness range of the metal layer 15 is 200nm to 300nm, including an endpoint value, so that the phenomenon that the thickness of the metal layer 15 is too thin, which causes light to irradiate the readout circuit 12 through the metal layer 15, is avoided, and meanwhile, the phenomenon that the thickness of the metal layer 15 is too thick, which wastes raw materials and increases the cost is avoided.
The shape of the first via in the metal layer 15 includes, but is not limited to, circular, square, rectangular.
The material of the insulating layer 16 is not particularly limited in this application and may be provided by itself. The insulating layer 16 is, for example, a silicon dioxide layer or a silicon nitride layer.
It should be noted that, in order to reduce the difficulty of the manufacturing process, the material of the passivation layer 10 is generally the same as that of the insulating layer 16.
Optionally, the thickness of the insulating layer 16 ranges from 200nm to 1 μm, inclusive, to ensure that the insulating layer 16 has good insulating properties. Preferably, the thickness of the insulating layer 16 is 500 nm.
The shape of the second via in the insulating layer 16 includes, but is not limited to, circular, square, rectangular, and the size of the second via is smaller than that of the first via, and the difference in size may range from 1 μm to 3 μm.
The solar blind ultraviolet focal plane imaging detector comprises a detector array, a reading circuit 12, a passivation layer 10 filler layer 13 and a connecting column 11, and further comprises a metal layer 15 with a first through hole and an insulating layer 16 with a second through hole, the insulating layer 16 prevents the metal layer 15 and the reading circuit 12 from being short-circuited, the metal layer 15 corresponds to a table top array gap in the detector array and an area, which is not covered by a P-type electrode, of the table top array surface, visible light is prevented from being incident on the reading circuit 12 through the array table top gap, visible light spectrum response of the reading circuit 12 is prevented, and the solar blind/visible suppression ratio of the solar blind ultraviolet focal plane imaging detector is improved.
Fig. 3 is a comparison graph of transmission spectra of the solar-blind ultraviolet focal plane imaging detector of the present application and the solar-blind ultraviolet focal plane imaging detector of the prior art, where the abscissa is wavelength and the ordinate is transmittance, the solid line in fig. 3 represents transmittance of the solar-blind ultraviolet focal plane imaging detector of the present application at different wavelengths, and the dotted line represents transmittance of the solar-blind ultraviolet focal plane imaging detector of the prior art at different wavelengths, it can be obtained that the visible light/near infrared light transmittance of the solar-blind ultraviolet focal plane imaging detector of the present application is less than 1%, and the visible light/near infrared light transmittance of the solar-blind ultraviolet focal plane imaging detector of the prior art is higher than 25%, so that the solar-blind/visible suppression ratio of the solar-blind ultraviolet focal plane imaging detector of the present application is significantly improved.
The application also provides a method for manufacturing a solar-blind ultraviolet focal plane imaging detector, please refer to fig. 4, where fig. 4 is a flowchart of a method for manufacturing a solar-blind ultraviolet focal plane imaging detector provided in an embodiment of the application, and the method includes:
step S101: a detector array is obtained.
Specifically, a nucleation layer, a superlattice layer, an intrinsic AlGaN layer, an N-type AlGaN layer, an I-type AlGaN layer, and a P-type AlGaN layer are grown on a substrate, the I-type AlGaN layer and the P-type AlGaN layer are etched to form a mesa array, and a common N-type electrode and a pixel P-type electrode are fabricated.
Step S102: a passivation layer is prepared on the upper surface of the detector array.
The passivation layer is prepared by using a plasma enhanced chemical vapor deposition process, preferably, the material of the passivation layer is controlled to be consistent with that of the insulating layer, so that when the second through hole is formed by etching, the passivation layer and the insulating layer are etched together by using the same etching gas, and the difficulty of the manufacturing process is reduced.
Step S103: and coating a photoresist layer on the upper surface of the passivation layer, and carrying out exposure and development to enable the photoresist layer to correspond to the mesa array gap in the detector array and the region on the mesa array surface which is not covered by the P-type electrode to form a hollow region, wherein the size of the photoresist layer is smaller than that of the corresponding P-type electrode.
In the present application, the shape of the photoresist layer is not particularly limited, as the case may be. For example, the photoresist layer may be circular, rectangular, square, etc. in shape.
Step S104: and preparing a metal layer on the upper surface of the photoresist layer, and removing the photoresist layer and the metal layer laminated on the surface of the photoresist layer so as to enable the metal layer to be provided with a first through hole.
Optionally, the preparing the metal layer on the upper surface of the photoresist layer includes:
and preparing the metal layer on the upper surface of the photoresist layer by using an electron beam evaporation process or a magnetron sputtering process.
Preferably, the control metal layer is an aluminum layer or a gold layer, and because the reflectivity of gold and aluminum to light is high, light in the mesa array gap can be better shielded, wherein the cost of the aluminum layer is lower.
Optionally, the thickness range of the generated metal layer is controlled to be 200 nm-300 nm, including an endpoint value, so that the phenomenon that the generated metal layer is too thin and causes light to irradiate the reading circuit through the metal layer is avoided, and meanwhile, the phenomenon that the generated metal layer is too thick and wastes raw materials and the cost is increased is avoided.
Specifically, the photoresist layer and the metal layer stacked on the surface of the photoresist layer are removed by a lift-off process, and since the photoresist layer corresponds to the mesa array gap and the region of the mesa array surface which is not covered by the P-type electrode is a hollowed-out region, the metal layer formed in the hollowed-out region is directly contacted with the passivation layer, that is, the metal layer in the solar blind ultraviolet focal plane imaging detector is obtained. The shape of the first through hole is the shape of the photoresist layer.
Step S105: and preparing an insulating layer on the upper surface of the metal layer.
It should be noted that since the metal layer has the first via hole, the insulating layer is also provided in the first via hole.
The insulating layer is prepared on the upper surface of the metal layer by using a plasma enhanced chemical vapor deposition process, and the prepared insulating layer is not particularly limited in the application and can be a silicon dioxide layer or a silicon nitride layer.
Optionally, the thickness of the generated insulating layer is controlled to be 200nm to 1 μm, inclusive, to ensure that the insulating layer has good insulating property. Preferably, the thickness of the insulating layer is 500 nm.
Step S106: and etching the insulating layer and the passivation layer positioned in the first through hole to form a second through hole, wherein the size of the second through hole is smaller than that of the first through hole, and the second through hole is stopped on the surface of the P-type electrode to obtain the processed detector array.
Optionally, the etching the insulating layer and the passivation layer in the first through hole to form a second through hole includes:
and etching the insulating layer and the passivation layer positioned in the first through hole by utilizing photoetching and plasma etching processes to form the second through hole.
Step S107: and connecting the readout circuit and the processed detector array through connecting columns by using a flip chip bonding technology, and forming a filler layer between the readout circuit and the insulating layer.
It should be noted that the process of connecting the readout circuitry to the detector array by connecting studs and preparing the filler is the same as that in the prior art, and is well known to those skilled in the art, and will not be described in detail herein.
The solar blind ultraviolet focal plane imaging detector manufactured by the method comprises a detector array, a reading circuit, a passivation layer filler layer and a connecting column, and further comprises a metal layer with a first through hole and an insulating layer with a second through hole, wherein the insulating layer prevents the metal layer and the reading circuit from being short-circuited, the metal layer corresponds to a table top array gap in the detector array and an area, which is not covered by a P-type electrode, of the surface of the table top array, so that visible light is prevented from being incident on the reading circuit through the array table top gap, visible light spectrum response of the reading circuit is prevented, and the solar blind/visible suppression ratio of the solar blind ultraviolet focal plane imaging detector is improved.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The solar blind ultraviolet focal plane imaging detector and the manufacturing method thereof provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.

Claims (10)

1. A solar blind ultraviolet focal plane imaging detector is characterized by comprising a detector array, a reading circuit, a passivation layer, a metal layer with a first through hole, an insulating layer with a second through hole, a filler layer and a connecting column;
the metal layer is located on the lower surface of the passivation layer, the first through hole corresponds to a P-type electrode in the detector array, and the size of the first through hole is smaller than that of the P-type electrode, so that the metal layer corresponds to a mesa array gap in the detector array and a region, which is not covered by the P-type electrode, of the mesa array surface;
the insulating layer is located on the lower surface of the metal layer and in the first through hole, the second through hole corresponds to the first through hole, and the size of the second through hole is smaller than that of the first through hole.
2. The solar-blind ultraviolet focal plane imaging detector of claim 1, wherein the metal layer is an aluminum layer or a gold layer.
3. The solar-blind ultraviolet focal plane imaging detector of claim 1 or 2, wherein the insulating layer is a silicon dioxide layer or a silicon nitride layer.
4. The solar-blind ultraviolet focal plane imaging detector of claim 3, wherein the readout circuit is a CMOS readout circuit or a CCD readout circuit.
5. The solar-blind ultraviolet focal plane imaging detector of claim 4, wherein the thickness of the metal layer ranges from 200nm to 300nm, inclusive.
6. The solar-blind ultraviolet focal plane imaging detector of claim 5, wherein the thickness of the insulating layer ranges from 200nm to 1 μm, inclusive.
7. A preparation method of a solar blind ultraviolet focal plane imaging detector is characterized by comprising the following steps:
obtaining a detector array;
preparing a passivation layer on the upper surface of the detector array;
coating a photoresist layer on the upper surface of the passivation layer, and carrying out exposure and development to enable the photoresist layer to correspond to a mesa array gap in the detector array and an area on the mesa array surface which is not covered by the P-type electrode to form a hollow area, wherein the size of the photoresist layer is smaller than that of the corresponding P-type electrode;
preparing a metal layer on the upper surface of the photoresist layer, and removing the photoresist layer and the metal layer laminated on the surface of the photoresist layer to enable the metal layer to be provided with a first through hole;
preparing an insulating layer on the upper surface of the metal layer;
etching the insulating layer and the passivation layer positioned in the first through hole to form a second through hole, wherein the size of the second through hole is smaller than that of the first through hole, and the second through hole is stopped on the surface of the P-type electrode to obtain a processed detector array;
and connecting the readout circuit and the processed detector array through connecting columns by using a flip chip bonding technology, and forming a filler layer between the readout circuit and the insulating layer.
8. The method for preparing a solar-blind ultraviolet focal plane imaging detector as claimed in claim 7, wherein the step of preparing the metal layer on the upper surface of the photoresist layer comprises:
and preparing the metal layer on the upper surface of the photoresist layer by using an electron beam evaporation process or a magnetron sputtering process.
9. The method for preparing a solar-blind ultraviolet focal plane imaging detector as claimed in claim 8, wherein the step of preparing an insulating layer on the upper surface of the metal layer comprises:
and preparing the insulating layer on the upper surface of the metal layer by utilizing a plasma enhanced chemical vapor deposition process.
10. The method for preparing a solar-blind ultraviolet focal plane imaging detector according to claim 9, wherein the etching the insulating layer and the passivation layer in the first through hole to form a second through hole comprises:
and etching the insulating layer and the passivation layer positioned in the first through hole by utilizing photoetching and plasma etching processes to form the second through hole.
CN202010995497.0A 2020-09-21 2020-09-21 Solar blind ultraviolet focal plane imaging detector and manufacturing method thereof Pending CN112086436A (en)

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