CN109119508A - Incident solar blind ultraviolet detector of a kind of back and preparation method thereof - Google Patents
Incident solar blind ultraviolet detector of a kind of back and preparation method thereof Download PDFInfo
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- CN109119508A CN109119508A CN201810897294.0A CN201810897294A CN109119508A CN 109119508 A CN109119508 A CN 109119508A CN 201810897294 A CN201810897294 A CN 201810897294A CN 109119508 A CN109119508 A CN 109119508A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 171
- 230000007704 transition Effects 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000011241 protective layer Substances 0.000 claims abstract description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000002242 deionisation method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000007654 immersion Methods 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 230000002411 adverse Effects 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 238000010129 solution processing Methods 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 230000002829 reductive effect Effects 0.000 claims description 2
- 239000013049 sediment Substances 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000005457 optimization Methods 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035772 mutation Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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Abstract
The invention discloses incident solar blind ultraviolet detectors of a kind of back and preparation method thereof, using back incidence structure, the inventive system comprises: substrate, buffer layer, stress release layer, N-shaped ohmic contact layer, N-shaped transition zone, i type light absorbing layer, p-type doping layer, p-type transition zone, p-type ohmic contact layer, protective layer, n-type electrode, p-type electrode, present invention aim to address AlGaN base p-i-n junction ultraviolet detector p-type doping low efficiencys, film crack, epitaxial structure has to be optimized, the problems such as crystal quality is not high, the present invention passes through setting buffer layer, stress release layer, transition zone realizes the object of the invention with optimization preparation method, improve device performance, it is low to provide a kind of dark current, quantum efficiency is higher, inhibit than more preferable, detectivity is higher, performance preferably carry on the back incident solar blind ultraviolet detector and its Preparation method.
Description
Technical field
The present invention relates to field of photodetectors, more particularly to carry on the back incident solar blind ultraviolet detector and preparation method thereof.
Background technique
Solar blind ultraviolet detector can detect ultraviolet light, and the ultraviolet light detected is converted to readily identified
Electric signal is transmitted.Solar blind ultraviolet detector has that quantum efficiency height, high sensitivity, performance is stable, background noise is low, is not easy
By radiation and the interference such as chemistry, investigative range is wide the advantages that, at present in missile guidance and early warning, fire alarm, communication, the sun
Multiple military and civil fields such as astronomical research are used widely, place especially weaker in UV signal, and detection is high
Sensitivity, the advantage of pinpoint accuracy are even more especially prominent.
In existing solar blind ultraviolet detector technology of preparing, preparing material mainly has 4H-SiC, MgZnO, GaN/AlGaN
Three kinds, each own advantage and disadvantage of different solar blind ultraviolet detectors of three kinds of materials preparation.4H-SiC type solar blind ultraviolet detector fusing point
High, good heat conductivity, is suitble to work under high temperature and high-energy, but its there are low quantum efficiencies and the nonadjustable disadvantage of band gap；
The matching of MgZnO type solar blind ultraviolet detector single crystalline substrate, nontoxic, convieniently synthesized, at low cost, electronics saturation and drift velocity
Fastly, the advantages that band gap is wide and adjustable, but lack corresponding encapsulation technology at present；GaN/AlGaN type day blind ultraviolet detection
Device stable chemical performance, radiation, which be difficult to interfere, can mix Al adjusts that band gap, detection performance be good, fast response time, but has growth temperature
The disadvantages of degree is high, substrate difficulty matches.
The relevant technologies for preparing solar blind ultraviolet detector are developed so far, GaN/AlGaN be at present it is optimal prepare material,
It is most widely used in the ultraviolet detector of broad-band gap.In AlGaN base p-i-n junction ultraviolet detector, ultraviolet light is improved in the area p
Sensitivity makes it be easier to be absorbed excitation electron-hole pair at i layers, to form carrier and carry out in a short period of time
Get over.The p-i-n junction of the detector is greatly improved its detectivity, generates more multiple carrier, and accelerate carrier velocity, i
Layer makes basis material no longer influence breakdown voltage, and responsiveness, response time and the quantum efficiency of device are all improved.To the greatest extent
Pipe AlGaN base p-i-n junction ultraviolet detector has many advantages, such as, but there are also some disadvantages: preparing high Al contents in note Al ion
AlGaN when, AlGaN can with Sapphire Substrate generate conflict so that lattice is damaged and thermal mismatching, in turn result in high dislocation
Density and film crack；P-type doping is inefficient.
Summary of the invention
Present invention aim to address AlGaN base p-i-n junction ultraviolet detector p-type doping low efficiencys, film crack, extension
The problem that structure has to be optimized, crystal quality not high, provides that a kind of dark current is low, quantum efficiency is higher, inhibits than more preferable, detection
Rate is higher, performance preferably carries on the back incident solar blind ultraviolet detector and preparation method thereof.
A kind of the technical solution adopted in the present invention: incident solar blind ultraviolet detector of back, comprising: substrate, buffer layer, stress
Releasing layer, N-shaped ohmic contact layer, N-shaped transition zone, i type light absorbing layer, p-type doping layer, p-type transition zone, p-type ohmic contact layer,
Protective layer, n-type electrode, p-type electrode；
The substrate is Sapphire Substrate, is located at each layer lowest part；
The buffer layer is high-temperature AlN layer, and thickness 350nm is accumulated to proof stress, and prevention film cracking is located at lining
On bottom；
The stress release layer is AlN/Al0.6Ga0.4N superlattice layer, the effect of this layer are for reducing epitaxial structure
Dislocation density is located on buffer layer；
The N-shaped ohmic contact layer, by the Al doped with Si0.6Ga0.4N is constituted, and with a thickness of 550nm, is released positioned at stress
It puts on layer；
The N-shaped transition zone, by AlxGa1-xN is constituted, thick 20nm, and the Al component of this layer is variation, is connect by N-shaped ohm
The 0.6 of contact layer is gradient to the 0.45 of i type light absorbing layer, this layer avoids the mutation of Al component, improves carrier collection rate, should
Layer is located on N-shaped ohmic contact layer；
The i type light absorption thickness 200nm, by the Al not being doped0.45Ga0.55N constitute, be located at N-shaped transition zone it
On；
The p-type doping thickness 75nm, by the Al for being doped with Mg0.45Ga0.55N is constituted, and is located on i type light absorbing layer；
The p-type transition zone is by being doped with the Al of MgxGa1-xN is constituted, and Al component is gradually decreased to 0 by 0.45, by close to p-type
Doped layer is gradually reduced to p-type ohmic contact layer direction, thick 25nm, is located on p-type doping layer；
The p-type ohmic contact layer, thick 50nm are formed by Mg doping GaN, are located on p-type transition zone；
The protective layer is SiO2Layer, thick 200nm are covered in the part except entire two electrode of device upper surface；
Shown n-type electrode is annular in shape, is located on N-shaped ohmic contact layer edge；
The p-type electrode is located on p-type ohmic contact layer.
The present invention is a kind of carry on the back incident solar blind ultraviolet detector the preparation method is as follows:
The cleaning of substrate epitaxial piece: utilizing acetone soak epitaxial wafer, uses ultrasonic cleaning 10 minutes while immersion, later
The organic matter being adsorbed on epitaxial wafer equally is cleaned using alcohol immersion and ultrasonic cleaning 10 minutes, then deionization, then will be outer
Prolong piece to be immersed in hydrochloric acid solution 5 minutes, then deionization rinses.
Production buffer layer and stress release layer: in substrate, existed using metallorganic chemical vapor deposition method
At a high temperature of 1100 DEG C, epitaxial growth buffer, then on the buffer layer with 1200 DEG C, 1000 III/V flow-rate ratio and 10Pa extremely
Reaction cavity pressure between 15Pa, is epitaxially-formed stress release layer.
It makes N-shaped ohmic contact layer: using metallorganic chemical vapor deposition method on stress release layer, it is raw
Length forms N-shaped ohmic contact layer.
Make transition zone: Al ion repeatedly injects, and injects Al to transition zone with different-energy and dosage as needed every time
Ion gradually slowly changes the injection condition of Al ion, and then changes different location Al group in N-shaped transition zone and p-type transition zone
The content divided, keeps Al component slowly varying, reduces the variable gradient of Al component, and as needed, injection number is 5 to 10 times, note
Entering energy is 10keV to 100keV, and implantation dosage is 2 × 1013ions/cm2To 1 × 1014ions/cm2, respectively in N-shaped ohm
Growth forms N-shaped transition zone, p-type transition zone on contact layer, p-type doping layer.
It makes i type light absorbing layer and p-type doping layer: using metallorganic chemical vapor deposition in N-shaped transition zone
Method, successively growth forms i type light absorbing layer and p-type doping layer.
It makes p-type ohmic contact layer: utilizing metallorganic chemical vapor deposition method on p-type transition zone, it is raw
Length forms p-type ohmic contact layer.
It makes protective layer: carrying out device SiO using plasma enhanced chemical vapor deposition2The preparation of protective layer, has both
Passivation and the effect for improving device performance reliability.
Mesa etch: using ICP technique, and ICP power 300W, RF power is 100W, Cl2/BCl3Flowrate proportioning is mark
(ml/s)/0.1 (ml/s), SiO 0.8 under quasi- state2Mask, chamber pressure 12 to 15Pa utilize the hydrogen-oxygen of boiling after etching
Change potassium solution processing apparatus to reduce adverse effect caused by etching.
Make electrode: n-type electrode is Ti/Al/Ni/Au sequence alloy, and p-type electrode is Ni/Au sequence double-level-metal, is utilized
The removal of the method for photoetching and electron beam evaporation is covered on the subregional protection of N-shaped ohmic contact layer and p-type ohmic contact layer top
Layer recycles electron beam evaporation deposit to deposit to form n in corresponding position respectively to reserve the position of installation n-type electrode and p-type electrode
Type electrode and p-type electrode, finally the short annealing 1min in 700 DEG C of nitrogen.
Beneficial effects of the present invention: (1) presence of buffer layer makes film cracking be curbed to a certain extent.(2)
The low problem of p-type layer doping efficiency is avoided using back incidence structure, and thicker metal can be used to make more low-resistance p-type Europe
Nurse contact layer.(3) presence of stress release layer controls the dislocation density in epitaxial structure.(4) electrode connects more
It is reliable and stable, the resistance that fast degradation processing greatly reduces two electrodes is carried out to electrode.The low Al component of (5) two transition zones
Gradient improves device performance.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the present invention.
Fig. 2 is overlooking structure diagram of the present invention.
In figure: 1-substrate, 2-buffer layers, 3-stress release layers, 4-N-shaped ohmic contact layers, 5-N-shaped transition zones,
6-i type light absorbing layers, 7-p-type doping layers, 8-p-type transition zones, 9-p-type ohmic contact layers, 10-protective layers, 11-N-shapeds
Electrode, 12-p-type electrodes.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing.
The present invention uses back incidence structure, as shown in Figure 1, the inventive system comprises: substrate (1), is answered at buffer layer (2)
Power releasing layer (3), N-shaped ohmic contact layer (4), N-shaped transition zone (5), i type light absorbing layer (6), p-type doping layer (7), p-type transition
Layer (8), p-type ohmic contact layer (9), protective layer (10), n-type electrode (11), p-type electrode (12), the substrate (1) are sapphire
Substrate is located at each layer lowest part；The buffer layer (2) is high-temperature AlN layer, and thickness 350nm is accumulated to proof stress, prevention
Film cracking, is located on substrate (1)；The stress release layer (3) is AlN/Al0.6Ga0.4N superlattice layer, the effect of this layer
It is the dislocation density for reducing epitaxial structure, is located on buffer layer (2)；The N-shaped ohmic contact layer (4), by doped with
The Al of Si0.6Ga0.4N is constituted, and with a thickness of 550nm, is located on stress release layer (3)；The N-shaped transition zone (5) by
AlxGa1-xN is constituted, thick 20nm, and the Al component of this layer is variation, is gradient to i type light by the 0.6 of N-shaped ohmic contact layer (4) and is inhaled
The 0.45 of layer (6) is received, this layer avoids the mutation of Al component, improves carrier collection rate, which is located at N-shaped ohmic contact layer
(4) on；I type light absorbing layer (6) the thickness 200nm, by the Al not being doped0.45Ga0.55N is constituted, and is located at N-shaped transition zone
(5) on；The p-type doping layer (7) is the Al for being doped with Mg0.45Ga0.55N layers, thick 75nm, be located at i type light absorbing layer (6) it
On；The p-type transition zone (8) is by being doped with the Al of MgxGa1-xN is constituted, and Al component is gradually decreased to 0 by 0.45, and thick 25nm is located at
On p-type doping layer (7)；P-type ohmic contact layer (9) the thickness 50nm is made of Mg doping GaN, is located at p-type transition zone (8)
On；The protective layer (10) is SiO2Layer, thick 200nm are covered in entire device upper surface n-type electrode (11) and p-type electrode
(12) part except；Shown n-type electrode (11) annularly, is located on N-shaped ohmic contact layer (4) edge；The p-type electrode
(12) it is located on p-type ohmic contact layer (9).
Part is identical as customary preparation methods in preparation method of the present invention, but other parts are optimized:
Step of preparation process includes: the cleaning of substrate (1) epitaxial wafer, production buffer layer (2) and stress release layer (3), production n
Type ohmic contact layer (4), production transition zone, production i type light absorbing layer (6) and p-type doping layer (7), production p-type ohmic contact layer
(9), protective layer (10), mesa etch, production electrode are made, wherein the cleaning of substrate (1) epitaxial wafer, production transition zone, preparation are protected
Sheath, mesa etch, prepare electrode, transition zone prepares these techniques and is optimized in the present invention.
The cleaning of substrate (1) epitaxial wafer: utilizing acetone soak epitaxial wafer, uses ultrasonic cleaning 10 minutes while immersion,
The organic matter being adsorbed on epitaxial wafer equally is cleaned using alcohol immersion and ultrasonic cleaning 10 minutes, then deionization later, then
Epitaxial wafer is immersed in hydrochloric acid solution 5 minutes, then deionization rinses.
Production buffer layer (2) and stress release layer (3): on substrate (1), metallo-organic compound chemical gaseous phase is utilized
Sedimentation is at a high temperature of 1100 DEG C, epitaxial growth buffer (2), then in extension on piece with 1200 DEG C, 1000 III/V flow
Than and 10Pa to the reaction cavity pressure between 15Pa, be epitaxially-formed stress release layer (3).
It makes N-shaped ohmic contact layer (4): being formed sediment on stress release layer (3) using metallo-organic compound chemical gaseous phase
Area method, growth form N-shaped ohmic contact layer (4).
Make transition zone: Al ion repeatedly injects, and injects Al to transition zone with different-energy and dosage as needed every time
Ion gradually slowly changes the injection condition of Al ion, and then changes different positions in N-shaped transition zone (5) and p-type transition zone (8)
The content for setting Al component keeps Al component slowly varying, reduces the variable gradient of Al component, and as needed, injection number is 5-10
Secondary, Implantation Energy is 10keV to 100keV, and implantation dosage is 2 × 1013ions/cm2To 1 × 1014ions/cm2, respectively in N-shaped
Growth forms N-shaped transition zone (5), p-type transition zone (8) on ohmic contact layer (4), p-type doping layer (7).
Make i type light absorbing layer (6) and p-type doping layer (7): in N-shaped transition zone (5) using metallo-organic compound chemistry
Vapour deposition, successively growth forms i type light absorbing layer (6) and p-type doping layer (7).
It makes p-type ohmic contact layer (9): utilizing metallorganic chemical vapor deposition on p-type transition zone (8)
Method, growth form p-type ohmic contact layer (9).
It makes protective layer (10): carrying out device SiO using plasma enhanced chemical vapor deposition (PECVD)2Protective layer
(10) preparation has both passivation and improves the effect of device performance reliability.
Mesa etch: using ICP technique, and ICP power 300W, RF power is 100W, Cl2/BCl3Flowrate proportioning is mark
(ml/s)/0.1 (ml/s), SiO 0.8 under quasi- state2Mask, chamber pressure 12-15Pa utilize the hydroxide of boiling after etching
Potassium solution processing apparatus is to reduce adverse effect caused by etching.
Make electrode: n-type electrode (11) is Ti/Al/Ni/Au sequence alloy, and p-type electrode (12) is that Ni/Au sequence is double-deck
Metal is covered on N-shaped ohmic contact layer (4) and p-type ohmic contact layer (9) using the removal of the method for photoetching and electron beam evaporation
The protective layer (10) of partial region recycles electron beam to steam to reserve the position of installation n-type electrode (11) and p-type electrode (12)
Hair deposit deposits to form n-type electrode (11) and p-type electrode (12) in corresponding position respectively, finally quickly moves back in 700 DEG C of nitrogen
Fiery 1min.
Claims (10)
1. a kind of incident solar blind ultraviolet detector of back, comprising: substrate (1), buffer layer (2), stress release layer (3), N-shaped ohm connect
Contact layer (4), N-shaped transition zone (5), i type light absorbing layer (6), p-type doping layer (7), p-type transition zone (8), p-type ohmic contact layer
(9), protective layer (10), n-type electrode (11), p-type electrode (12), the substrate (1) are Sapphire Substrate, and it is most lower to be located at each layer
Portion；The buffer layer (2) is high-temperature AlN layer, is located on substrate (1)；The stress release layer (3) is AlN/Al0.6Ga0.4N
Superlattice layer is located on buffer layer (2)；The N-shaped ohmic contact layer (4), by the Al doped with Si0.6Ga0.4N is constituted, position
On stress release layer (3)；The N-shaped transition zone (5) is by AlxGa1-xN constitute, the layer be located at N-shaped ohmic contact layer (4) it
On；The i type light absorbing layer (6) is by the Al that is not doped0.45Ga0.55N is constituted, and is located on N-shaped transition zone (5)；The p
Type doped layer (7) is by being doped with the Al of Mg0.45Ga0.55N is constituted, and is located on i type light absorbing layer (6)；The p-type transition zone (8)
AlGaN by being doped with Mg is constituted, and is located on p-type doping layer (7)；The p-type ohmic contact layer (9) adulterates GaN structure by Mg
At on p-type transition zone (8)；The protective layer (10) is SiO2Layer, the layer are covered in entire device upper surface N-shaped electricity
Part except pole (11) and p-type electrode (12)；Shown n-type electrode (11) annularly, is located at N-shaped ohmic contact layer (4) edge
On；The p-type electrode (12) is located on p-type ohmic contact layer (9).
2. the incident solar blind ultraviolet detector of a kind of back according to claim 1, it is characterised in that: the buffer layer (2) is thick
Spend 350nm.
3. the incident solar blind ultraviolet detector of a kind of back according to claim 1, it is characterised in that: the N-shaped Ohmic contact
Layer (4) is with a thickness of 550nm.
4. the incident solar blind ultraviolet detector of a kind of back according to claim 1, it is characterised in that: the N-shaped transition zone (5)
Thick 20nm, the Al component of this layer are variations, are gradient to i type light absorbing layer (6) by the 0.6 of N-shaped ohmic contact layer (4)
0.45。
5. the incident solar blind ultraviolet detector of a kind of back according to claim 1 or 4, it is characterised in that: the i type light absorption
Layer (6) thickness 200nm.
6. the incident solar blind ultraviolet detector of a kind of back according to claim 1, it is characterised in that: the p-type doping layer (7)
Thick 75nm.
7. the incident solar blind ultraviolet detector of a kind of back according to claim 1, it is characterised in that: the p-type transition zone (8)
Al component be gradually decreased to 0 by 0.45, it is thick from being gradually reduced close to p-type doping layer (7) to p-type ohmic contact layer (9) direction
25nm。
8. the incident solar blind ultraviolet detector of a kind of back according to claim 1, it is characterised in that: the p-type Ohmic contact
Layer (9) thickness 50nm.
9. the incident solar blind ultraviolet detector of a kind of back according to claim 1, it is characterised in that: the protective layer (10) is thick
200nm。
10. a kind of incident solar blind ultraviolet detector preparation method of back, it is characterised in that:
The cleaning of substrate (1) epitaxial wafer: utilizing acetone soak epitaxial wafer, uses ultrasonic cleaning 10 minutes while immersion, later
The organic matter being adsorbed on epitaxial wafer equally is cleaned using alcohol immersion and ultrasonic cleaning 10 minutes, then deionization, then will be outer
Prolong piece to be immersed in hydrochloric acid solution 5 minutes, then deionization rinses；
Production buffer layer (2) and stress release layer (3): on substrate (1), metallorganic chemical vapor deposition is utilized
Method is at a high temperature of 1100 DEG C, epitaxial growth buffer (2), then with 1200 DEG C, 1000 III/V flow on buffer layer (2)
Than and 10Pa to the reaction cavity pressure between 15Pa, be epitaxially-formed stress release layer (3)；
It makes N-shaped ohmic contact layer (4): using metallorganic chemical vapor deposition method on stress release layer (3),
Growth forms N-shaped ohmic contact layer (4)；
Make transition zone: Al ion repeatedly injects, every time as needed with different-energy and dosage to transition zone injection Al from
Son gradually slowly changes the injection condition of Al ion, and then changes different location in N-shaped transition zone (5) and p-type transition zone (8)
The content of Al component keeps Al component slowly varying, reduces the variable gradient of Al component, and as needed, injection number is 5 to 10
Secondary, Implantation Energy is 10keV to 100keV, and implantation dosage is 2 × 1013ions/cm2To 1 × 1014ions/cm2, respectively in N-shaped
Growth forms N-shaped transition zone (5), p-type transition zone (8) on ohmic contact layer (4), p-type doping layer (7)；
It makes i type light absorbing layer (6) and p-type doping layer (7): using metallo-organic compound chemical gaseous phase in N-shaped transition zone (5)
Sedimentation, successively growth forms i type light absorbing layer (6) and p-type doping layer (7)；
It makes p-type ohmic contact layer (9): utilizing metallorganic chemical vapor deposition method on p-type transition zone (8),
Growth forms p-type ohmic contact layer (9)；
It makes protective layer (10): carrying out device SiO using plasma enhanced chemical vapor deposition2The preparation of protective layer (10), it is simultaneous
Tool passivation and the effect for improving device performance reliability；
Mesa etch: using ICP technique, and ICP power 300W, RF power is 100W, Cl2/ BCl3Flowrate proportioning is standard
0.8(ml/s under state)/0.1(ml/s), SiO2Mask, chamber pressure 12Pa to 15Pa utilize the hydrogen-oxygen of boiling after etching
Change potassium solution processing apparatus to reduce adverse effect caused by etching；
Make electrode: n-type electrode (11) is Ti/Al/Ni/Au sequence alloy, and p-type electrode (12) is Ni/Au sequence double-level-metal,
Part on N-shaped ohmic contact layer (4) and p-type ohmic contact layer (9) is covered on using the removal of the method for photoetching and electron beam evaporation
The protective layer (10) in region recycles electron beam evaporation to form sediment to reserve the position of installation n-type electrode (11) and p-type electrode (12)
It integrates other corresponding position to deposit to form n-type electrode (11) and p-type electrode (12), the finally short annealing in 700 DEG C of nitrogen
1min。
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690323A (en) * | 2019-10-08 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Preparation method of ultraviolet photoelectric detector and ultraviolet photoelectric detector |
| CN111933748A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Back-incident solar blind ultraviolet detector and manufacturing method thereof |
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988185A (en) * | 2006-12-20 | 2007-06-27 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| JP2007214515A (en) * | 2006-02-13 | 2007-08-23 | Nippon Telegr & Teleph Corp <Ntt> | Structure of nitride semiconductor |
| KR20070106214A (en) * | 2006-04-28 | 2007-11-01 | (주)제니컴 | Sensor for both ultraviolet rays and visible rays |
| KR20070112499A (en) * | 2006-05-22 | 2007-11-27 | 한양대학교 산학협력단 | Fabrication method of uv photodetector |
| CN101188256A (en) * | 2007-12-10 | 2008-05-28 | 厦门大学 | InAlGaN/GaN PIN photoelectric detector without strain |
| CN102214705A (en) * | 2011-05-28 | 2011-10-12 | 西安电子科技大学 | AlGan polarized ultraviolet photoelectric detector and manufacturing method thereof |
| JP2013069935A (en) * | 2011-09-23 | 2013-04-18 | Sumitomo Chemical Co Ltd | Manufacturing method of semiconductor substrate |
| US20130292685A1 (en) * | 2012-05-05 | 2013-11-07 | Texas Tech University System | Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures |
| CN103400888A (en) * | 2013-08-22 | 2013-11-20 | 南京大学 | High-gain AlGaN ultraviolet avalanche photodetector and preparation method thereof |
| CN103646986A (en) * | 2013-12-26 | 2014-03-19 | 中国科学院半导体研究所 | AlGaN-based bicolor solar blind ultraviolet detector and manufacturing method thereof |
| US20140183548A1 (en) * | 2012-12-28 | 2014-07-03 | Seoul Viosys Co., Ltd. | Light detection device |
| CN204130567U (en) * | 2014-09-24 | 2015-01-28 | 滁州学院 | A kind of avalanche photodide for day blind ultraviolet detection |
| CN105304748A (en) * | 2015-09-30 | 2016-02-03 | 厦门大学 | 4H-SiC ultraviolet photoelectric detector in double work modes and manufacturing method thereof |
| CN106960887A (en) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof |
| CN107863413A (en) * | 2017-11-02 | 2018-03-30 | 中山大学 | A kind of AlGaN bases day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof |
-
2018
- 2018-08-08 CN CN201810897294.0A patent/CN109119508B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007214515A (en) * | 2006-02-13 | 2007-08-23 | Nippon Telegr & Teleph Corp <Ntt> | Structure of nitride semiconductor |
| KR20070106214A (en) * | 2006-04-28 | 2007-11-01 | (주)제니컴 | Sensor for both ultraviolet rays and visible rays |
| KR20070112499A (en) * | 2006-05-22 | 2007-11-27 | 한양대학교 산학협력단 | Fabrication method of uv photodetector |
| CN1988185A (en) * | 2006-12-20 | 2007-06-27 | 厦门大学 | 4H-SiC avalanche photodetector and its preparing method |
| CN101188256A (en) * | 2007-12-10 | 2008-05-28 | 厦门大学 | InAlGaN/GaN PIN photoelectric detector without strain |
| CN102214705A (en) * | 2011-05-28 | 2011-10-12 | 西安电子科技大学 | AlGan polarized ultraviolet photoelectric detector and manufacturing method thereof |
| JP2013069935A (en) * | 2011-09-23 | 2013-04-18 | Sumitomo Chemical Co Ltd | Manufacturing method of semiconductor substrate |
| US20130292685A1 (en) * | 2012-05-05 | 2013-11-07 | Texas Tech University System | Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures |
| US20140183548A1 (en) * | 2012-12-28 | 2014-07-03 | Seoul Viosys Co., Ltd. | Light detection device |
| CN103400888A (en) * | 2013-08-22 | 2013-11-20 | 南京大学 | High-gain AlGaN ultraviolet avalanche photodetector and preparation method thereof |
| CN103646986A (en) * | 2013-12-26 | 2014-03-19 | 中国科学院半导体研究所 | AlGaN-based bicolor solar blind ultraviolet detector and manufacturing method thereof |
| CN204130567U (en) * | 2014-09-24 | 2015-01-28 | 滁州学院 | A kind of avalanche photodide for day blind ultraviolet detection |
| CN105304748A (en) * | 2015-09-30 | 2016-02-03 | 厦门大学 | 4H-SiC ultraviolet photoelectric detector in double work modes and manufacturing method thereof |
| CN106960887A (en) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof |
| CN107863413A (en) * | 2017-11-02 | 2018-03-30 | 中山大学 | A kind of AlGaN bases day blind ultraviolet snowslide heterojunction phototransistor detector and preparation method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690323A (en) * | 2019-10-08 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Preparation method of ultraviolet photoelectric detector and ultraviolet photoelectric detector |
| CN111933748A (en) * | 2020-07-22 | 2020-11-13 | 中国电子科技集团公司第十三研究所 | Back-incident solar blind ultraviolet detector and manufacturing method thereof |
| CN112018210A (en) * | 2020-09-18 | 2020-12-01 | 南京冠鼎光电科技有限公司 | Polarization-enhanced narrow-band AlGaNp-i-n type ultraviolet detector and preparation method thereof |
| CN112018210B (en) * | 2020-09-18 | 2022-05-17 | 南京冠鼎光电科技有限公司 | Polarization-enhanced narrow-band AlGaNp-i-n type ultraviolet detector and preparation method thereof |
| CN113964224A (en) * | 2021-12-22 | 2022-01-21 | 至芯半导体(杭州)有限公司 | Epitaxial structure of semiconductor ultraviolet detector chip, preparation method of epitaxial structure and semiconductor ultraviolet detector chip |
| CN114068741A (en) * | 2022-01-17 | 2022-02-18 | 至善时代智能科技(北京)有限公司 | Ultraviolet detector chip |
| CN114068741B (en) * | 2022-01-17 | 2022-04-19 | 至善时代智能科技(北京)有限公司 | Ultraviolet detector chip |
| CN117334776A (en) * | 2023-09-05 | 2024-01-02 | 武汉敏芯半导体股份有限公司 | Photoelectric detector based on periodic strain and manufacturing method thereof |
| CN117334776B (en) * | 2023-09-05 | 2024-05-14 | 武汉敏芯半导体股份有限公司 | Photoelectric detector based on periodic strain and manufacturing method thereof |
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