CN111916417A - 具有图案化表面结构的微电子装置 - Google Patents

具有图案化表面结构的微电子装置 Download PDF

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Publication number
CN111916417A
CN111916417A CN202010908335.9A CN202010908335A CN111916417A CN 111916417 A CN111916417 A CN 111916417A CN 202010908335 A CN202010908335 A CN 202010908335A CN 111916417 A CN111916417 A CN 111916417A
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Prior art keywords
patterned surface
surface structure
microelectronic device
metal material
conductive
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CN202010908335.9A
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施信益
吴铁将
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Micron Technology Inc
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Micron Technology Inc
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Publication of CN111916417A publication Critical patent/CN111916417A/zh
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Abstract

本申请涉及具有图案化表面结构的微电子装置。本发明公开了一种连接结构及其制造方法。该连接结构包含半导体基板、金属层、钝化层以及导电结构。金属层位于半导体基板的上方。钝化层位于金属层的上方，且包含一个开口。导电结构具有图案化表面结构，图案化表面结构通过钝化层的开口与金属层接触。借此，本发明的连接结构及其制造方法，其中连接结构的图案化表面结构，可改善在回焊期间的晶片翘曲，以避免晶片破裂并增加可靠性，还降低整体的翘曲级。

Description

具有图案化表面结构的微电子装置
分案申请的相关信息
本案是分案申请。该分案的母案是申请日为2015年09月22日、申请号为201510607154.1、发明名称为“连接结构及其制造方法”的发明专利申请案。
技术领域
本发明涉及一种半导体结构及其制造方法，特别是涉及一种具有图案化表面结构的微电子装置及其制造方法。
背景技术
凸块(Bump)为覆晶封装(Flip Chip Package)结构中用于连接基板与晶片的重要元件。覆晶封装结构通常使用凸块作为媒介，以机械性或导电性的连接基板与晶片。由于凸块是基板与晶片之间连接的关键，因此凸块的可靠性会影响整体覆晶封装结构的操作。封装的目的是为了保护经过多道工艺的晶片，并使封装晶片附着至印刷电路板上。无论如何决不允许封装工艺对晶片所产生的任何损坏。
回焊(Reflow)工艺为连接表面安装元件至电路板及/或金属衬垫的最常规方法。为了较好的可靠性及连接至金属衬垫，可借由回焊工艺来处理凸块。在回焊工艺中，电路板与凸块全部的组装(assembly)在热处理下进行，例如借由退火(annealing)。热处理可借由将所述组装通过回焊炉(Reflow oven)或在红外线灯泡下以完成。据此，改善凸块在封装工艺中的可靠度是必要的。
发明内容
本发明的目的在于提供一种连接结构及其制造方法，其具有图案化表面结构，可改善在回焊期间的晶片翘曲，以避免晶片破裂并增加可靠性，还降低整体的翘曲级。
本发明提供一种连接结构。该连接结构包含半导体基板、金属层、钝化层以及导电结构。金属层位于半导体基板的上方。钝化层位于金属层的上方，且包含一个开口。导电结构具有图案化表面结构，图案化表面结构通过钝化层的开口与金属层接触。
在本发明各种实施方式中，导电结构包含凸块(bump)或焊球(soldering ball)。
在本发明各种实施方式中，导电结构的图案化表面结构包含金属部分及支撑部分。
在本发明各种实施方式中，连接结构还包含凸块下方金属(under-bumpmetallurgy，UBM)层，其设置于金属层及导电结构之间。
在本发明各种实施方式中，图案化表面结构的支撑部分为网状结构、多个规则排列柱子或同心圆柱。
在本发明各种实施方式中，所述柱子具有一个剖面包含多边形、圆形或椭圆形。
在本发明各种实施方式中，图案化表面结构的支撑部分的材料包含至少一种无机材料、至少一种有机材料或其组合；而无机材料为二氧化硅(silicon dioxide)、氮化硅(silicon nitride)、二氧化钛(titanium dioxide)或氧化铝(aluminum oxide)，有机材料为聚亚酰胺(polyimide)或聚苯恶唑(polybenzoxazole，PBO)。
在本发明各种实施方式中，图案化表面结构的金属部分的材料包含锡(Sn)、银(Ag)、铜(Cu)、金(Au)、合金或其组合。
在本发明各种实施方式中，凸块下方金属层的材料包含氮化钛(TiN)、钛(Ti)、氮化钨(WN)、锡(Sn)、银(Ag)、铜(Cu)、金(Au)、镍(Ni)、合金或其组合。
在本发明各种实施方式中，钝化层的开口具有一种形状，该形状包含多边形、圆形或椭圆形。
本发明提供一种制造连接结构的方法，且其方法包含下列步骤。在半导体基板的上方形成金属层。在金属层的上方形成钝化层。凹槽化钝化层以形成开口。形成导电结构，且其具有图案化表面结构，而图案化表面结构通过钝化层的开口与金属层接触。
在本发明各种实施方式中，凹槽化钝化层以形成开口的工艺包含下列步骤。使用光阻至钝化层上。在钝化层进行微影(lithography)及蚀刻(etching)以形成开口，且开口中具有钝化层的剩余部分以作为开口中的支撑部分。
在本发明各种实施方式中，形成导电结构的工艺包含下列步骤。将金属填入开口。所述金属进行回焊(reflow)以形成导电结构。
在本发明各种实施方式中，在凹槽化钝化层之后，以及形成导电结构之前，所述方法还包含形成支撑部分于开口中。
在本发明各种实施方式中，形成导电结构的工艺包含下列步骤。将金属填入开口。所述金属进行回焊以形成导电结构。
在本发明各种实施方式中，形成导电结构的工艺包含下列步骤。形成导电结构，且其具有图案化表面结构，而图案化表面结构具有金属部分及支撑部分。借由钝化层的开口，以连接导电结构的图案化表面结构与金属层。
在本发明各种实施方式中，在凹槽化该钝化层之后，以及形成该导电结构之前，所述方法还包含在金属层与导电结构之间形成凸块下方金属层。
在本发明各种实施方式中，支撑部分的材料包含至少一种无机材料、至少一种有机材料或其组合；而无机材料为二氧化硅(silicon dioxide)、氮化硅(silicon nitride)、二氧化钛(titanium dioxide)或氧化铝(aluminum oxide)，有机材料为聚亚酰胺(polyimide)或聚苯恶唑(polybenzoxazole，PBO)。
在本发明各种实施方式中，图案化表面结构的金属部分的材料包含锡(Sn)、银(Ag)、铜(Cu)、金(Au)、合金或其组合。
在本发明各种实施方式中，凸块下方金属层的材料包含氮化钛(TiN)、钛(Ti)、氮化钨(WN)、锡(Sn)、银(Ag)、铜(Cu)、金(Au)、镍(Ni)、合金或其组合。
与现有技术相比，本发明具有如下有益效果：本发明的连接结构及其制造方法，其具有图案化表面结构，可改善在回焊期间的晶片翘曲，以避免晶片破裂并增加可靠性，还降低整体的翘曲级。
参照以下的说明以及权利要求，可更加理解本发明的特征、实施例以及优点。
应当理解的是，以上的一般叙述以及以下的详细叙述是实例，并旨在对所要求保护发明提供进一步的解释。
附图说明
本发明内容的实施方式可从下面的详细描述并结合参阅附图得到最佳的理解。要强调的是，按照在业界的标准实务做法，各种特征不一定是按比例绘制。事实上，为了清楚的讨论各种特征的尺寸可任意放大或缩小。
图1是绘示依据本发明多个实施方式的一种连接结构的剖面图；
图2A至图2C是绘示依据本发明多个实施方式的沿着图1中的A至A’线的仰视图；
图3是绘示依据本发明多个实施方式的一种连接结构的剖面图；
图4A至图4C是绘示依据本发明多个实施方式的一种连接结构制造过程中的中间阶段剖面图；
图5A至图5D是绘示依据本发明多个实施方式的一种连接结构制造过程中的中间阶段剖面图；
图6A至图6D是绘示依据本发明多个实施方式的一种连接结构制造过程中的中间阶段剖面图；以及
图7A至图7D是绘示依据本发明多个实施方式的一种连接结构制造过程中的中间阶段剖面图。
具体实施方式
之后将以示例图式以详细描述本发明的各种实施方式，且在图式和说明书中使用相同的元件符号以指代相同或相似的部分。
以下将以图式公开本发明的多个实施方式，为明确说明起见，许多实务上的细节将在以下叙述中一并说明。然而，应了解到，这些实务上的细节不应用以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化图式起见，一些现有惯用的结构与元件在图式中将以简单示意的方式绘示。
由于前述的问题，凸块成为基板与晶片之间连接的关键，因此凸块的可靠性会影响整体覆晶封装结构的操作。为了较好的可靠性及连接至金属衬垫，可借由回焊工艺来处理凸块。然而，在回焊期间，凸块时常引起晶片翘曲。据此，极需一种改善的连接结构及其制造方法。
本发明提供一种连接结构及其制造方法。该连接结构具有图案化表面结构，其可改善在回焊期间的晶片翘曲。因此，借由本发明所提供的连接结构可避免晶片破裂(crack)且增加可靠性，还降低整体的翘曲级(warpage level)。
请参照图1。根据本发明多个实施方式，图1为一种连接结构的剖面图。如图1所示，连接结构100包含半导体基板110、金属层120、钝化层130及导电结构140。半导体基板110上方具有金属层120位于其上。具有开口的钝化层130位于金属层120的上方。而导电结构140具有图案化表面结构142，导电结构140的图案化表面结构142经由钝化层130的开口与金属层120接触。导电结构140的图案化表面结构142包含金属部分142a与支撑部分142b。在一些实施方式中，值得注意的是，图案化表面结构142的支撑部分142b可能来自钝化层130的剩余部份、来自新加入到钝化层130开口中的材料、或借由直接形成于导电结构140中的方式。关于上述得到支撑部分的选择将于之后再详细说明(在图4A至图6D的介绍中)。
在一些实施方式中，导电结构140包含凸块(bump)或焊球(soldering ball)。根据一些实施方式，钝化层的开口具有一种形状，该形状包含多边形、圆形或椭圆形。当开口的形状为多边形时，所述多边形的实例包含，但不限于，三角形、矩形、梯形、平行四边形、菱形、五边形或六边形。在一些实施方式中，导电结构140的支撑部分142b的材料包含，但不限于，至少一种无机材料如二氧化硅(silicon dioxide)、氮化硅(silicon nitride)、二氧化钛(titanium dioxide)、氧化铝(aluminum oxide)，或至少一种有机材料如聚亚酰胺(polyimide)、聚苯恶唑(polybenzoxazole，PBO)，或其组合。在一些实施方式中，图案化表面结构142的金属部分142a的材料为锡(Sn)、银(Ag)、铜(Cu)、金(Au)、合金(alloy)或其组合。在一些实施方式中，钝化层130的材料为至少一种无机材料如二氧化硅(silicondioxide)、氮化硅(silicon nitride)、二氧化钛(titanium dioxide)、氧化铝(aluminumoxide)，或至少一种有机材料如聚亚酰胺(polyimide)、聚苯恶唑(polybenzoxazole，PBO)，或其组合。
本发明提供一种连接结构100具有导电结构140，其经由图案化表面结构142与金属层120接触。进一步地，图案化表面结构142的支撑部分142b可于回焊工艺中减少应力(stress)以改善晶片翘曲。因此，连接结构100中的导电结构140的图案化表面结构142可避免晶片破裂且提升可靠性，还降低整体的翘曲级(warpage level)。
根据本发明多个实施方式，图2A至图2C为沿着图1中的A至A’线的仰视图。参照图2A，在一实施方式中，图案化表面结构142的支撑部分142b为网状结构。根据另一实施方式，图2B绘示出图案化表面结构142的支撑部分142b为多个规则排列柱子。举例而言，所述柱子具有剖面，该剖面包含多边形、圆形或椭圆形。此外，举例来说多边形包含，但不限于三角形、矩形、梯形、平行四边形、菱形、五角形或六角形。图2B绘示出具有圆形剖面的柱子。在一些实施方式中，图案化表面结构142的支撑部分142b为一个或多个同心圆柱。图2C绘示出图案化表面结构142的支撑部分142b为两个同心圆柱。
请参照图3。根据本发明多个实施方式，图3为一种连接结构的剖面图。如图3所示，连接结构200包含半导体基板210、金属层220、钝化层230、导电结构240及凸块下方金属(under-bump metallurgy，UBM)层250。半导体基板210上方具有金属层220位于其上。具有开口的钝化层230位于金属层220的上方。而导电结构240具有图案化表面结构242，导电结构240的图案化表面结构242经由钝化层230的开口与金属层220接触。导电结构240的图案化表面结构242包含金属部分242a与支撑部分242b。凸块下方金属层250设置于金属层220与导电结构240之间，且凸块下方金属层250的材料例如包含，但不限于氮化钛(TiN)、钛(Ti)、氮化钨(WN)、锡(Sn)、银(Ag)、铜(Cu)、金(Au)、镍(Ni)、合金或其组合。然而，图3绘示出的实施例是对应于图1所示的实施例，所以其详细说明便不在此重复。因此，根据一些实施方式，可利用如前述图1的说明所提及的相似的材料及任何细节。
请参照图4A至图4C。根据本发明多个实施方式，图4A至图4C为一种连接结构制造过程中的中间阶段剖面图。
本发明一些实施方式提供一种制造如图4C所示的连接结构300的方法。首先参照图4A，金属层320在半导体基板310的上方形成，而后钝化层330在金属层320的上方形成。接着，如图4B所示，凹槽化钝化层330以形成开口332。详细说明如下，使用光阻(未显示)至钝化层330上。在钝化层330进行微影(lithography)与蚀刻(etching)以形成开口332，且开口332中具有钝化层330的剩余部分以作为开口332中的支撑部份334。继续参照图4C，将金属填入图4B所示的开口332中，而后回焊金属以形成具有图案化表面结构342的导电结构340。图案化表面结构342包含金属部分342a与支撑部份334，且其会通过图4B所示的钝化层330的开口332与金属层320接触。详细描述如下，举例而言，将金属填入图4B所示的开口332中的方法包含，但不限于电镀(plating)、热蒸镀(thermal evaporation)或溅镀(sputtering)。在一些实施方式中，借由通过回焊炉(reflow oven)或在红外线灯泡下进行退火(annealing)以回焊金属。
继续参照图4A至图4C。在一些实施方式中，支撑部份334的材料与钝化层330相同，其为至少一种无机材料如二氧化硅(silicon dioxide)、氮化硅(silicon nitride)、二氧化钛(titanium dioxide)、氧化铝(aluminum oxide)，或至少一种有机材料如聚亚酰胺(polyimide)、聚苯恶唑(polybenzoxazole，PBO)，或其组合。根据一些实施方式，图案化表面结构342的金属部分342a包含，但不限于锡(Sn)、银(Ag)、铜(Cu)、金(Au)、合金(alloy)或其组合。
请参照图5A至图5D。根据本发明多个实施方式，图5A至图5D为一种连接结构制造过程中的中间阶段剖面图。
本发明一些实施方式提供一种制造如图5D所示的连接结构400的方法。首先参照图5A，金属层420在半导体基板410的上方形成，而后钝化层430在金属层420的上方形成。接着，如图5B所示，凹槽化钝化层430以形成开口432。详细说明如下，使用光阻(未显示)至钝化层430上。在钝化层430进行微影(lithography)与蚀刻(etching)以形成开口432。现在参照图5C，支撑部分440在图5B所示的开口432中形成。根据一些实施方式，支撑部分440是以介电材料所制成，举例而言，介电材料如二氧化硅(silicon dioxide)、氮化硅(siliconnitride)、二氧化钛(titanium dioxide)或其组合。接着参照图5D，将金属填入图5B所示的开口432中，而后回焊金属以形成具有图案化表面结构452的导电结构450。图案化表面结构452包含金属部分452a与支撑部份440，且其会通过图5B所示的钝化层430的开口432与金属层420接触。详细描述如下，举例而言，将金属填入图5B所示的开口432中的方法包含，但不限于电镀(plating)、热蒸镀(thermal evaporation)或溅镀(sputtering)。在一些实施方式中，借由通过回焊炉(reflow oven)或在红外线灯泡下进行退火(annealing)以回焊金属。此外，根据一些实施方式，可利用如前述图4A至图4C的说明所提及的相似的材料。
请参照图6A至图6D。根据本发明多个实施方式，图6A至图6D为一种连接结构制造过程中的中间阶段剖面图。
本发明一些实施方式提供一种制造如图6D所示的连接结构500的方法。首先参照图6A，金属层520在半导体基板510的上方形成，而后钝化层530在金属层520的上方形成。接着，如图6B所示，凹槽化钝化层530以形成开口532。详细说明如下，使用光阻(未显示)至钝化层530上。在钝化层530进行微影(lithography)与蚀刻(etching)以形成开口532。参照图6C，单独形成的导电结构540具有包含金属部分542a与支撑部分542b的图案化表面结构542。接着参照图6D，导电结构540的图案化表面结构542通过图6B所示的钝化层530的开口532与金属层520接触。此外，根据一些实施方式，可利用如前述图4A至图4C的说明所提及的相似的材料。
根据一些实施方式，在凹槽化钝化层之后，以及形成导电结构之前，所述方法还包含在金属层及导电结构之间形成凸块下方金属(under-bump metallurgy，UBM)层。举例而言，形成凸块下方金属层的方法包含，但不限于图7A至图7D所示的工艺。
请参照图7A至图7D。根据本发明多个实施方式，图7A至图7D为一种连接结构制造过程中的中间阶段剖面图。
本发明一些实施方式提供一种制造如图7D所示的连接结构600的方法。首先参照图7A，金属层620在半导体基板610的上方形成，而后钝化层630在金属层620的上方形成。接着，如图6B所示，凹槽化钝化层630以形成开口632。详细说明如下，使用光阻(未显示)至钝化层630上。在钝化层630进行微影(lithography)与蚀刻(etching)以形成开口632，且开口632中具有钝化层630的剩余部分以作为开口632中的支撑部份634。具有支撑部分634的开口632，其具有一个上表面。接着参照图7C，凸块下方金属层640保形地在开口632的上表面上形成。随后参照图7D，将金属填入图7B所示的开口632中，而后回焊金属以形成具有图案化表面结构652的导电结构650。图案化表面结构652包含金属部分652a与支撑部份634，且其会通过图7B所示的钝化层630的开口632与金属层620接触。详细描述如下，举例而言，将金属填入图7B所示的开口632中的方法包含，但不限于电镀(plating)、热蒸镀(thermalevaporation)或溅镀(sputtering)。在一些实施方式中，借由通过回焊炉(reflow oven)或在红外线灯泡下进行退火(annealing)以回焊金属。此外，根据一些实施方式，可利用如前述图4A至图4C的说明所提及的相似的材料。
由上述本发明实施方式可知，本发明优于现有的连接结构与其工艺，并总结此些优点如下。凸块在回焊期间时常引起晶片翘曲。替代地，本发明提供一种改善的连接结构及其制造方法。所述连接结构的导电结构可通过图案化表面结构与金属层接触。此外，图案化表面结构包含金属部分与支撑部分。支撑部分在回焊期间可降低应力(stress)，进而改善晶片翘曲的问题。总结前述重点，在连接结构中的导电结构的图案化表面结构在回焊期间可改善晶片翘曲，以避免晶片破裂(crack)，并增加其可靠性，还降低整体的翘曲级(warpage level)。
本发明已经相当详细地描述某些实施方式，但其他的实施方式也为可能的。因此，权利要求的精神和范筹不应限于本文所描述的实施方式。
虽然本发明已经以实施方式公开如上，然其并非用以限定本发明，任何本领域技术人员，在不脱离本发明的精神和范围内，当可作各种变动与润饰，因此本发明的保护范围当视权利要求所界定者为准。

Claims (20)

1.一种微电子装置，其包含：
基板；
金属材料，其在所述基板的上方；
单一钝化材料，其直接位于所述金属材料的上方，其中所述单一钝化材料包含以所述单一钝化材料的垂直侧壁为边界的至少一个开口；
图案化表面结构，其包含直接位于所述单一钝化材料的所述至少一个开口内的所述金属材料上的所述单一钝化材料的多个横向间隔的部分，其中所述图案化表面结构从所述金属材料突出、并且与所述垂直侧壁横向地间隔，并且其中所述图案化表面结构经配置为网状结构、规则间隔的柱子或同心圆柱；以及
导电结构，其包含单一导电回焊金属材料，其中所述单一导电回焊金属材料位于所述单一钝化材料中的所述至少一个开口内的所述图案化表面结构的上方、并且与所述金属材料直接接触，其中所述至少一个开口内的所述导电结构的部分与所述图案化表面结构的上表面和侧壁相接触，并且其中在所述单一钝化材料的上方延伸的所述导电结构的一部分展示与所述单一钝化材料的所述垂直侧壁基本一致的横向边界。
2.如权利要求1所述的微电子装置，其中所述单一钝化材料延着所述金属材料的整体直接位于所述金属材料的上方。
3.如权利要求1所述的微电子装置，其中所述金属材料位于所述基板和所述单一钝化材料中的每一者之间、并且与所述基板和所述单一钝化材料中的每一者直接接触。
4.如权利要求1所述的微电子装置，其中所述导电结构与所述图案化表面结构的整个上表面和侧壁基本直接物理接触，所述导电结构基本完全填充所述单一钝化材料中的所述至少一个开口。
5.如权利要求1所述的微电子结构，其中所述单一钝化材料的所述至少一个开口具有包含多边形、圆形或椭圆形中的至少一者的形状。
6.如权利要求1所述的微电子装置，其中所述图案化表面结构包含垂直侧壁。
7.如权利要求1所述的微电子装置，其中所述图案化表面结构包含具有剖面的所述规则间隔的柱子，所述剖面包含多边形、圆形或椭圆形。
8.如权利要求1所述的微电子装置，其中所述单一钝化材料包含无机材料或者有机材料，并且所述无机材料为二氧化硅、氮化硅、二氧化钛或氧化铝，所述有机材料为聚亚酰胺或聚苯恶唑。
9.如权利要求1所述的微电子装置，其中所述导电结构包含锡(Sn)、银(Ag)、铜(Cu)、金(Au)、其合金或其组合。
10.如权利要求1所述的微电子装置，其中所述导电结构包含焊接材料。
11.如权利要求1所述的微电子装置，其中所述图案化表面结构经配置以在回焊工艺期间减少应力以改善晶片翘曲。
12.一种微电子装置，其包含：
基板；
金属材料，其在所述基板的上方；
单一钝化材料，其直接位于所述金属材料的上方，其中所述单一钝化材料包含以所述单一钝化材料的垂直侧壁为边界的至少一个开口；
图案化表面结构，其包含直接位于所述单一钝化材料的所述至少一个开口内的所述金属材料上的所述单一钝化材料的多个横向间隔的部分，其中所述图案化表面结构从所述金属材料突出、并且与所述垂直侧壁横向地间隔，并且其中所述图案化表面结构经配置为网状结构、规则间隔的柱子或同心圆柱；
凸块下方金属UBM，其在所述至少一个开口内，其中所述UBM邻接所述垂直侧壁，其中所述UBM的上范围与所述垂直侧壁的上表面相一致，并且其中所述UBM在所述金属材料以及所述图案化表面结构的上表面和侧壁的上方、并且与所述金属材料以及所述图案化表面结构的所述上表面和所述侧壁直接接触；以及
导电结构，其包含单一导电回焊金属材料，其中所述单一导电回焊金属材料位于所述单一钝化材料中的所述至少一个开口内的所述图案化表面结构的上方、并且与所述UBM的表面直接接触，并且其中在所述单一钝化材料的上方延伸的所述导电结构的一部分展示与所述单一钝化材料的所述垂直侧壁相邻接的所述UBM的上边缘相一致的横向边界。
13.如权利要求12所述的微电子装置，其中所述UBM位于所述金属材料和所述导电结构中的每一者之间、并且与所述金属材料和所述导电结构中的每一者直接接触。
14.如权利要求12所述的微电子装置，其中所述UBM基本保形于所述金属材料的整个上表面以及所述图案化表面结构的上表面和侧壁。
15.如权利要求12所述的微电子装置，其中所述UBM的外边缘紧靠所述单一钝化材料的所述垂直侧壁。
16.如权利要求12所述的微电子装置，其中所述导电结构包含所述单一导电回焊金属材料的上部分以及所述单一导电回焊金属材料的下部分，所述单一导电回焊金属材料的所述上部分在所述图案化表面结构的上表面的上方，所述单一导电回焊金属材料的所述下部分在所述图案化表面结构的相邻侧壁之间横向地延伸，所述单一导电回焊金属材料的所述上部分和所述下部分是所述单一导电回焊金属材料的连续体。
17.如权利要求12所述的微电子装置，其中所述图案化表面结构包含具有圆形截面形状的所述规则间隔的柱子。
18.如权利要求12所述的微电子装置，其中所述图案化表面结构包含所述网状结构，所述网状结构具有第一线性部分和第二线性部分的相交区域，所述第一线性部分平行于第一水平方向，所述第二线性部分平行于第二水平方向，所述第二水平方向横向于所述第一水平方向，所述第一线性部分和所述第二线性部分形成其之间具有离散的开口的所述单一钝化材料的连续结构。
19.如权利要求12所述的微电子装置，其中所述图案化表面结构包含邻接于另一同心圆柱的所述同心圆柱，所述同心圆柱和所述另一同心圆柱中的每一者包含所述单一钝化材料的部分。
20.如权利要求12所述的微电子装置，其中所述UBM包含氮化钛(TiN)、钛(Ti)、氮化钨(WN)、锡(Sn)、银(Ag)、铜(Cu)、金(Au)、镍(Ni)、其合金或其组合中的至少一者。
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