CN111902925B - 线上薄膜处理装置 - Google Patents
线上薄膜处理装置 Download PDFInfo
- Publication number
- CN111902925B CN111902925B CN201980021269.9A CN201980021269A CN111902925B CN 111902925 B CN111902925 B CN 111902925B CN 201980021269 A CN201980021269 A CN 201980021269A CN 111902925 B CN111902925 B CN 111902925B
- Authority
- CN
- China
- Prior art keywords
- gas
- susceptor
- thin film
- film processing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000007667 floating Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 70
- 238000005339 levitation Methods 0.000 claims description 9
- 239000012495 reaction gas Substances 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 7
- 230000006698 induction Effects 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
所公开的薄膜处理装置包括:喷头,用于执行对沿输送轨道移动的基座上的衬底的薄膜处理;一或多个输送器,用于支撑基座,其中输送器可在相对于轨道浮动且不接触轨道时沿输送路径输送基座,且还可控制基座的高度以便调整从衬底到喷头的距离;以及输送器控制系统,用于控制输送器。
Description
技术领域
本公开涉及薄膜处理设备且涉及:线上薄膜处理方法,其中在单个输送线中连续地执行若干处理;以及线上薄膜处理设备。
背景技术
通过循环原子层沉积(atomic layer deposition;ALD)方法,具有原子层厚度的高质量薄膜可在低温下在其上形成图案的衬底上均一地形成。此类循环ALD方法实际上和基本上应用于获得高介电常数(high-K)的高性能半导体动态随机存取存储器(DRAM)且制造超大规模集成(super large scale integration;S-LSI)产品。然而,因为薄膜形成速率缓慢,因此常规循环ALD方法在制造大面积产品的装置(例如显示器和太阳能电池)方面存在缺点。
空间(Spatial)ALD方法已应用于硅太阳能电池以及类似物的大批量生产且获得大量关注,但在大面积扩展和多组件薄膜沉积方面仍存在限制。
在由基座(susceptor)/衬底(substrate)的往复输送(reciprocatingtransport)执行的薄膜形成方法中,存在生成颗粒的问题和对应用于大面积产品的限制。此外,由于输送装置的重复加速度和停止而发生频繁机械故障。
在利用循环输送(circulating transport)的转盘方法中,并不易于确保薄膜形成的均一性(uniformity),且难以扩展对应于大的显示器的大面积。
发明内容
技术问题
根据一示范性实施例,提供线上薄膜处理方法和线上薄膜处理设备,其呈现改良薄膜沉积速率且适合于制造大面积产品。
根据一示范性实施例,提供线上薄膜处理方法和线上薄膜处理设备,其有利于大面积扩展和多组件薄膜沉积。
问题的技术解决方案
根据一示范性实施例的线上薄膜处理设备具备:
至少一个隧道型处理腔室(tunnel-typed processing chamber),安置于包括预定直线区段和弯曲区段的圆形输送轨道(circular transport track)上;
一或多个基座(susceptor),其中的每一个沿输送轨道循环移动且包括在其上放置待处理衬底的载物台;
薄膜处理的喷头,执行对输送轨道上的衬底的薄膜处理且包括源气体供应模块、吹扫气体供应模块、反应气体供应模块以及排气模块中的至少一或多个;以及
一或多个输送器(transporter),其中的每一个支撑基座,在相对于轨道浮动且不接触轨道时沿输送路径输送基座,且控制基座的高度以调整从衬底到喷头的距离。
根据一示范性实施例,输送器可具有磁悬浮型线性电动机的结构,驱动线圈可设置于轨道上,且对应于驱动线圈的永磁体可设置于输送器中。
根据一示范性实施例,控制系统可控制输送器的线性电动机以在线上处理装置中执行包含速度和方向的所有控制。
根据一示范性实施例,位置检测传感器可设置于基座中以检测腔室内部的基座的位置。
根据一示范性实施例,磁性保险杆设置于基座中以使用磁斥力来防止与另一基座的碰撞。
根据一示范性实施例,一个基座可由多个输送器支撑。
根据一示范性实施例,输送器可包含支撑基座的支撑部件,支撑部件可安装成使得控制相对于输送器的旋转,且支撑部件可在基座在弯曲区段上输送时使基座相对于输送器旋转。
根据一示范性实施例,气体模块可包含:喷嘴主体,具有用于将相关气体喷射到衬底的气体输入路径和回流路径;以及旋转喷嘴头,可旋转地安装到喷嘴主体且包含连接到气体输入路径的内部气体路径和用于将气体排出到外部的气体排出孔,其中根据气体排出孔的旋转来选择由基座支撑的衬底和喷嘴主体的回流路径中的一个,且引入其中的气体移动到所选一个。
公开内容的有利效应
根据一示范性实施例,用于沿通道内部的轨道输送基座的输送器在相对于轨道浮动且不接触轨道时移动。此类结构尽可能地抑制在现有机械移动结构中发生的振动和颗粒的生成。
根据一示范性实施例,取决于基座的大小而调整输送器的数目,且多个输送器可应用于一个基座,进而实现衬底的增大。
根据一示范性实施例,由于基座的高度可调整,因此可控制衬底与喷嘴之间的距离,且可通过精确控制以微米形式调整所述距离。
附图说明
图1示意性地绘示根据示范性实施例的薄膜处理设备的平面配置。
图2是绘示应用于图1中所说明的装置的输送器的一部分的横截面示意图。
图3是绘示应用于图1中所说明的装置的输送器的一部分的示意性正视图。
图4示意性地说明应用于示范性实施例的输送器的驱动线圈和永磁体的布置。
图5绘示通过示范性实施例中的输送器的水平驱动部件和竖直驱动部件的基座的竖直浮动和相对于轨道的水平对准。
图6说明其中圆形晶片或四边形面板安装到示范性实施例中的基座的状态。
图7示意性地绘示根据另一示范性实施例的薄膜处理设备的平面配置。
图8以三维形式绘示图7中说明的输送器的示意性结构。
图9A和图9B说明在示范性实施例中的滑板与滑动底座之间的耦合结构。
图10是绘示其中多个输送器安装于根据示范性实施例的一个基座中的配置的透视图。
图11是绘示其中安装与根据示范性实施例的一个基座连结的多个输送器的配置的正视图。
图12说明用于根据示范性实施例的基座与基座的个别位置检测之间的碰撞防止的配置。
图13是具备根据示范性实施例的基座之间的碰撞防止的基座的局部透视图。
图14绘示通过根据示范性实施例的输送器的竖直驱动结构(高度调整结构)由于基座的高度调整引起的处理间隙的调整。
图15说明采取用于无线传输待供应到根据示范性实施例的基座的电功率的方法的无线功率传输部件。
图16是应用于示范性实施例的喷头的示意性透视图。
图17示意性地绘示图16中说明的喷头的结构。
图18A和图18B示意性地绘示气体到衬底的供应或气体通过根据示范性实施例的旋转阀的旁路回流或馈送。
具体实施方式
下文中,将参考随附图式描述根据示范性实施例的线上薄膜处理设备。然而,实施例可以许多不同形式体现,且本公开的范围不应理解为限于以下实施例。实际上,提供本公开的示范性实施例以向本领域的一般技术人员更充分地解释本公开。相同参考标号在全文中指代相同元件。此外,示意性地说明图中的各种元件和区。因此,本公开并不限于随附图式中所说明的相对大小或间隔。
虽然如第一、第二等的术语用于描述各种组件,但这些组件不应受这些术语限制。这些术语仅用于将一个元件与另一元件区分开。举例来说,在不脱离本公开的范围的情况下,第一组件可称作第二组件,且类似地,第二组件可称作第一组件。
在本申请中,术语仅用于解释特定实施例且并不希望限制本公开。除非上下文另作明确指示,否则单数形式包含复数形式。在本申请中,应理解,本文中所使用的术语“包含”或“包括”指明所陈述特征、数目、步骤、操作、组件、元件或其组合的存在,但并不排除一或多个其它特征、数目、步骤、操作、组件、元件或其组合的存在或添加。
除非另外定义,否则本文中所使用的所有术语包含具有与本公开涉及的领域的一般技术人员所通常理解的相同的含义的技术术语或科学术语。此外,如常用词典中所定义的术语应理解为具有与相关联技术上下文中相同的含义,且不应解译为具有过度形式化含义,除非本公开中明确如此定义。
当某一实施例可以不同方式实施时,特定处理次序可与所描述次序不同地执行。举例来说,两个连续描述的处理可大体上同时执行或以与所描述次序相反的次序执行。
在图式中,例如根据制造技术和/或容限,可预期所说明形状的修改。因此,本公开的实施例不得解译为受图式中所说明的特定形状限制且必须包含例如在制造期间发生的形状的改变。本文中所使用的术语“和/或”包含所提及组件中的每一个和其一或多个组合。此外,说明书中使用的术语“衬底”可指衬底自身或诱发衬底的堆叠结构以及形成于衬底的表面上的预定层或膜。此外,在说明书中,“衬底的表面”可指衬底自身的暴露表面或形成于衬底上的预定层或膜的外部表面。
图1示意性地绘示根据示范性实施例的薄膜处理设备中的具有轨道的循环型腔室的平面配置,且在所述轨道上连续执行一个处理或多个循环处理。
如图1中所说明,腔室10具有两个平行直线区段和在直线区段的两侧上的弯曲区段的细长圆形循环路径(circulating path)。圆形输送轨道(circular transport track)20安装在腔室10内部的底部中心上。轨道20可被修改或以各种形式开发。在其上安装处理中的衬底的基座30沿轨道20定位。沿轨道20浮动的(flying)输送器40设置于基座30下。基座30是在其上安装衬底的部件且其中具有加热器以热量衬底。衬底可通过真空吸引或静电力固定,或在一些情况下,可插入和固定到形成于基座30的表面上的衬底安放槽中。
输送器40在通过磁悬浮结构以及类似物浮动于轨道20上方时移动。输送器40可利用磁悬浮方法且由此可具有磁悬浮型线性感应电动机(下文中,称为线性电动机)的结构。线性感应电动机(linear induction motor)可在控制整个系统的控制装置的控制下在预定方向上移动。输送器40或基座30的速度可通过控制线性电动机来调整。
使用线性电动机的基座输送结构并不引起摩擦和振动,且因此,可显著解决由于摩擦和振动引起的问题。线性电动机的结构可根据熟知技术来设计成适于设置于轨道中的轨结构。输送器由分离设置的输送器控制系统控制,且这一控制系统可由控制整个薄膜处理的总体控制系统控制。
图2是绘示通道的内部的示意性部分横截面图以绘示利用上文所描述的线性电动机的输送器40的部分结构,且图3是输送器40的示意性正视图。
如图2和图3中所说明,腔室10具备在其上安装包含两个两侧对称轨20a、20a的轨道20的底部10c、在其上安装用于薄膜处理的喷头50的顶部10d以及两侧上的壁主体10a、10b。根据示范性实施例,当在其上安装衬底的基座30大时可使用两个轨,且当小时可使用一个轨。
待处理且在窄间隙下面向喷头50的四边形或圆形衬底60安装在基座30上,且沿轨道20的轨20a、20a移动的输送器40安装在衬底60下。
输送器40具有对应于轨20a、20a两者的对称线性电动机配置。也就是说,输送器40中的每一个包含具有永磁体阵列的移动部件(moving part)41和对应于移动部件41的具有驱动线圈的静态部件(stator或static part)42。包含移动部件41和静态部件42的输送器40对称地形成于基座30的底部的两侧上。
如图3中所说明,以上每一竖直轨20a设置于线圈固定板42下方,所述线圈固定板42具有作为构成水平驱动部件和竖直水平驱动部件的元件的分别形成水平磁场和竖直磁场的水平驱动线圈42a和竖直驱动线圈42b。在移动部件41中,具备分别对应于水平驱动线圈42a和竖直驱动线圈42b的水平驱动磁体41a和竖直驱动磁体41b。水平驱动线圈42a和水平驱动磁体41a属于水平驱动部件,且竖直驱动线圈42b和竖直驱动磁体41b属于竖直驱动部件。
图4示意性地说明布置于线性电动机的进展方向中的驱动线圈和永磁体。图4的配置应用于使用磁体与线圈之间的磁斥力的典型线性感应电动机的结构中。在图4中,箭头指示由于线圈与磁体之间的相互排斥引起的斥力的方向。此类结构可基于用于磁悬浮线性电动机的各种熟知技术而修改和改良。
图5说明基座30相对于轨道的竖直浮动和水平对准,其通过水平驱动部件和竖直驱动部件的水平驱动线圈42a和竖直驱动线圈42b连同对应于其的水平驱动磁体41a和竖直驱动磁体41b来进行。
在水平方向上,基座30通过在基座30下在两侧上彼此对称地布置的水平驱动线圈42a和面向其的水平驱动磁体41a与轨道的中心对准。在竖直方向上,基座30可由于竖直驱动磁体41b与对应其的竖直驱动线圈42b之间的磁斥力而浮动到预定高度。此处,衬底60与喷头50之间的距离可通过调整竖直浮动的程度控制。详细地说,衬底与喷头之间的距离可通过精细地调整具有竖直驱动部件的基座30的浮动高度在若干微米的范围加以控制。
图6说明其中圆形晶片60a或四边形面板60b作为衬底60安装在安装在如上文所描述的磁悬浮类型的输送器40上的基座30上的状态。
图7示意性地绘示根据另一示范性实施例的薄膜处理设备的平面配置。图7的薄膜处理设备具有如在车轮系统中其中多个输送器410布置于一个基座30中的配置。
参看图7,如图1的配置中所说明,腔室10具有两个平行直线区段和在直线区段的两侧上的弯曲区段的细长圆形循环路径(circulating path)。圆形轨道20安装在腔室10内部的底部中心上,且在其上安装衬底的多个基座30放置在轨道20上。在基座30的下部侧上,沿轨道20浮动的(flying)多个输送器410安装于基座30的前部和后部部分以及其间的中心部分中。
输送器410可具有如上文所描述的线性感应电动机的结构。此外,根据另一实施例,当基座30的大小小时,仅一个输送器410安装在一个基座30上。
图8以三维形式绘示图7的说明中提及的输送器410的示意性结构。
参考图8,输送器410包含对称地形成在轨轨20b的两侧上的L形移动框架或移动部件411、411。如上文所描述的水平驱动磁体41a和竖直驱动磁体41b安装于L形移动部件411、411中的每一个中。这些L形移动部件411、411由连结耦合的支撑臂413彼此连接。支撑臂413的两个末端通过设置于L形移动部件411、411两者上的枢轴(pivot)414连接,且因此,支撑臂413可相对于L形移动部件旋转。基座支撑杆416从支撑臂413的中心可自旋转地站立,且使基座30在一个方向上旋转和移动的滑块组件418设置于基座支撑杆416的上部末端处。滑块组件418包含相对于彼此滑动的滑动导板418a和滑动底座418b。
图9A是导板418a和滑动底座418b的耦合结构的横向截面视图,且9B是导板418a和滑动底座418b的耦合结构的纵向横截面图。
参考图9A和图9B,导板418a可滑动地安装在滑动底座418b下的线性运动导引部件418c上。因此,滑动底座418b可在一个方向上相对于导板418a往复运动。
根据上文所描述的基座的旋转和往复结构,基座30的位置可通过滑动底座418b在水平方向上改变,且基座30可通过具有在其上固定导板418a的上部末端的可旋转基座支撑杆416旋转。因此,基座30可在水平方向上相对于输送器410旋转和改变位置。虽然在图式中未绘示,但电磁体安置于导板的两个末端上,且因此,当滑动底座在直线区段中移动时,滑动底座可返回到中心位置。为避免绘制中的复杂度和辅助本公开的理解,可在以下图式中省略所述板和滑动底座。
图10是绘示其中多个输送器410安装在如在图7的说明中所提及的一个基座30上的结构的透视图,且图11是所述结构的正视图。
参考图10和图11,竖直单轨20b形成于腔室10的底部中心中,且水平平台421安装在轨20b上。平台421的两个末端充当对应于L形移动部件41、41的静态部件。为这个目的,对应于L形移动部件41、41两者中的每一个的水平驱动磁体和竖直驱动磁体的水平驱动线圈42a和竖直驱动线圈42b安装在静态部件平台421的两个末端中的每一个的对应位置处。
此处,对应于一个基座30的多个输送器410未说明于图式中但可通过适当连结结构彼此连结。在图10和图11中,参考标号“419”指示连接多个输送器410的连接臂。这一臂充当连结结构的一个元件。连接臂419维持输送器410之间的恒定距离且使支撑杆416和支撑臂413中的每一个旋转。
图12说明配备有碰撞防止保险杆和用于防止基座与基座的个别检测位置之间的碰撞的位置检测传感器的基座,且图13示意性地和部分地说明在其上安装碰撞防止保险杆和传感器的两个相邻基座。
首先,参考图12和图13,使用磁体的排斥的碰撞防止保险杆31安装在喷头50下通过的两个基座30中的每一个的两侧末端上。此处,提供关于当基座30通过时基座30的位置的信息的导向光源61设置于喷头50的一侧上,且接收所述信息的传感器62设置于基座30中的每一个中。基座30的碰撞防止保险杆31和相邻另一基座30的碰撞防止保险杆31由于相互磁斥力而彼此远离,且因此,可防止在轨道上行进的基座30之间的碰撞。
设置于基座30中的传感器62识别相对于喷头50的位置且使用位置信息。因此,举例来说,仅允许在喷头50的气体喷嘴阵列的有效沉积区域(zone)中执行用于薄膜形成或蚀刻中的薄膜的相关处理。
期望使用光学方法,其中光源和传感器用于确定用于上文所描述的薄膜处理的基座的位置。然而,可应用现有熟知的其它技术,如机械或电中断方法。
图14绘示通过输送器40的竖直驱动结构(高度调整结构)由于基座30的高度h2调整引起的处理间隙h1的调整。根据示范性实施例,输送器40也执行如上文所描述的基座30的高度调整。
如图14中所说明,基座30的高度调整意谓与喷头50的喷嘴的间隙调整,且由根据示范性实施例的磁悬浮方法(即,通过上文所描述的竖直驱动线圈42b和竖直驱动磁体41b)执行。此处,悬浮高度可通过调整用于竖直驱动线圈42b的驱动电压以微米形式精细地加以控制。这一竖直高度控制可由薄膜处理设备中的控制系统的控制算法执行。喷头50与基座30之间的间隙h1可由分离安装的高度测量单元(如传感器)测量,且可间接地使用所述间隙来识别悬浮高度h1。
此处,若干电气装置可安装于基座30中,且需要向其供应电功率。电功率的这一供应按以下方式进行,其中如图14中所说明,通过包含沿轨道安装的轨形电源部件71和在电源部件(电源轨)71上滑动的受电弓型功率接收部件72的滑动型输电部件70从道的下部侧供应电功率。
图15说明采取用于无线传输待供应到基座30的电功率的方法的无线功率传输部件80。
无线功率传输部件80利用其中电功率由电场感应传输的方法,且包含输送器40的移动部件41、在对应通道的底部处的电源线圈81以及功率接收线圈82。由于此类无线电源部件80在传输电功率上具有限制,因此用于存储由输电部件80供应的电功率的电池93可设置于基座30下。电池93由基座30下的隔热层保护且存储由输电部件90供应的电功率。这种无线充电方法还可由磁共振而非磁感应执行。
图16是应用于示范性实施例的喷头50的示意性透视图。
用于将气体供应到安装到基座30的衬底60的喷头50包含多个气体喷嘴头51,且吹扫气体供应头或排气头52可设置于气体喷嘴头51之间。喷嘴头51中的每一个包含气体供应管51a和回流管51b,且用于排出气体的多个气体排出口52形成于旋转阀53中。
喷头50的旋转阀53取决于基座30的位置而调节反应气体的供应。也就是说,当基座30在旋转阀53下通过时,使朝向基座30供应反应气体,且因此,反应气体供应到基座30上的衬底60。此外,当基座30远离喷头50时,旋转阀53切断反应气体的供应且经由其中的气体旁路使反应气体回流。这可通过图17和图18A-18B的说明更深一步地理解。
图17是绘示在用于供应气体且设置于在图16中说明的喷头50中设置的多个个别喷嘴头51中的每一个的主体内部的气体腔室51a与具有喷嘴的旋转阀53之间的关系的透视图,所述喷嘴使气体从气体腔室51a排出到衬底且在另一方向上旁路进而将气体发送到回流罐。
参看图17,从外部注入的气体流入储器(reservoir)51a中且存储在其中,且从外部切断存储于储器51a中的气体且使所述气体通过旋转阀53排出到外部。具有通孔的过滤板51a'、51a”设置于储器51a上和其下,从所述通孔引入和排出气体使得气体喷射是均一的。旋转阀53具有:一个直线形主气体通路53a,其末端部分具备用于朝向衬底排出气体的出口;以及气体旁路53b,其从主气体通路53a的中间延伸。根据另一示范性实施例,直线形主气体通路中的面向衬底的出气口可形成为呈细长狭缝形状。
图18A和图18B示意性地绘示气体到衬底的供应,或气体通过旋转阀53的旁路回流或馈送。在图18A中,说明一种状态,其中旋转阀53定位于第一位置处以用于将气体供应到衬底,且来自储器51a的气体可向下移动且朝向衬底排出。此外,在图18B中,旋转阀53定位于第二位置处以用于切断气体到衬底的供应,且气体经由旁路51c馈送到外部而不关闭来自腔室51a的气体。
根据示范性实施例,喷头的每一喷嘴头的出气口由旋转核壳圆筒型阀门(coreshell cylinder type valve)提供,且气体可供应到衬底上且经由旁路51c排出到储器51a的外部以供重新使用。
旋转阀53可由分离驱动装置操作且瞬时地切换气体的注入或回收(回流)。在这一操作中,操作位置可由设置于基座中的传感器以及类似物确定。这一操作方法可解决当衬底并不存在时源气体流入储器且生成(产生)颗粒的问题。
根据上文所描述的示范性实施例的薄膜处理设备的轨道或腔室可以各种形式体现。举例来说,轨道或腔室可具有具备如图1中所说明的弯曲区段和直线区段的简单圆形形状。根据另一实施例,用于上文所描述的处理的多个圆形轨道密集地封装且彼此相关联,且直线区段和弯曲区段取决于设计条件以各种形式布置。负载锁定腔室(load lockchamber)设置于用于处理的腔室之间,且因此,衬底可输送到另一腔室而不暴露于大气。
为较好地理解,已参考图式中所说明的实施例描述了根据本发明的实施例的制造半导体装置的方法,但所述实施例仅仅是说明性的。因此,本领域的技术人员应理解,来自所述实施例的各种修改和其它等效实施例是可能的。因此,本发明的真实技术防范范围应通过随附权利要求书确定。
Claims (8)
1.一种薄膜处理设备,包括:
至少一个隧道型处理腔室,安置于包括预定直线区段和弯曲区段的圆形输送轨道上;
一或多个基座,其中的每一个沿所述输送轨道循环移动且包括在其上放置待处理衬底的载物台;
薄膜处理喷头,执行对所述输送轨道上的所述衬底的薄膜处理且包括源气体供应模块、吹扫气体供应模块、反应气体供应模块以及排气模块中的至少一或多个;以及
一或多个输送器,其中的每一个支撑所述基座,在相对于所述输送轨道浮动且不接触所述输送轨道时沿所述输送轨道输送所述基座,且控制所述基座的高度以调整从所述衬底到所述薄膜处理喷头的距离,
其中所述薄膜处理喷头设置有多个喷嘴头,所述喷嘴头中的每一个包括气体腔室、连接到所述气体腔室的气体供应管和回流管、以及具有气体通路的旋转阀,用于将气体从所述气体腔室输送到所述衬底或所述回流管,并且进一步包括直线形主气体通路以及气体旁路,其中所述直线形主气体通路具有用于向所述衬底排出气体的排出口,且其中所述气体旁路从所述直线形主气体通路的中间延伸;
其中,当所述基座进入所述喷头下方时,所述喷头会旋转至第一位置,使所述主气体通路与所述气体腔室连通,且所述气体腔室中的气体经由所述排出口排出至所述衬底上;以及
其中,当所述基座远离所述喷头时,所述喷头旋转至第二位置,使所述气体旁路连通至所述气体腔室,使得从所述气体腔室引向所述衬底的所述气体从所述主气体通路立即返回至所述回流管。
2.根据权利要求1所述的薄膜处理设备,其中所述输送器具有磁悬浮型线性电动机的结构。
3.根据权利要求2所述的薄膜处理设备,其中所述输送器包括设置于所述基座上的移动部件和设置于所述输送轨道上的静态部件。
4.根据权利要求1所述的薄膜处理设备,其中所述输送器包括水平驱动部件和竖直驱动部件以分别调整所述基座在水平方向和竖直方向上的位置。
5.根据权利要求1到4中任一项所述的薄膜处理设备,其中位置检测传感器设置于所述基座中以检测所述隧道型处理腔室内部的所述基座的位置。
6.根据权利要求1所述的薄膜处理设备,其中磁性保险杆设置于所述基座中以使用磁斥力来防止与另一基座的碰撞。
7.根据权利要求1所述的薄膜处理设备,其中所述输送器包括支撑部件,所述支撑部件支撑所述基座以使得所述基座被循环输送。
8.根据权利要求7所述的薄膜处理设备,其中所述支撑部件设置有使所述基座在一个方向上往复运动的滑块组件,且所述滑块组件包括固定在所述基座下方的导板和与所述导板可滑动地耦合的滑动底座。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20180034095 | 2018-03-23 | ||
KR10-2018-0034095 | 2018-03-23 | ||
KR10-2019-0014438 | 2019-02-07 | ||
KR1020190014438A KR102284795B1 (ko) | 2018-03-23 | 2019-02-07 | 인라인 박막 프로세싱 장치 |
PCT/KR2019/002496 WO2019182260A1 (ko) | 2018-03-23 | 2019-03-05 | 인라인 박막 프로세싱 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111902925A CN111902925A (zh) | 2020-11-06 |
CN111902925B true CN111902925B (zh) | 2024-05-17 |
Family
ID=68423004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980021269.9A Active CN111902925B (zh) | 2018-03-23 | 2019-03-05 | 线上薄膜处理装置 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102284795B1 (zh) |
CN (1) | CN111902925B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111508874A (zh) * | 2020-04-27 | 2020-08-07 | 南昌欧菲显示科技有限公司 | 喷管安装组件及蚀刻装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0530028U (ja) * | 1991-09-26 | 1993-04-20 | 花王株式会社 | 物品の緩衝装置 |
CN101091241A (zh) * | 2004-10-09 | 2007-12-19 | 布鲁克斯自动化公司 | 衬底处理装置 |
KR20140085947A (ko) * | 2012-12-28 | 2014-07-08 | 주식회사 원익아이피에스 | 기판처리장치 및 기판처리방법 |
WO2015056847A1 (en) * | 2013-10-16 | 2015-04-23 | Korea Electrotechnology Research Institute | Magnetically levitated transportation apparatus |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101208660B1 (ko) * | 2010-12-01 | 2012-12-05 | 한국기계연구원 | 곡선 주행 성능이 향상된 자기부상 이송 시스템 |
KR101344215B1 (ko) * | 2012-06-01 | 2013-12-23 | 주식회사 테스 | 박막 증착장치 |
-
2019
- 2019-02-07 KR KR1020190014438A patent/KR102284795B1/ko active IP Right Grant
- 2019-03-05 CN CN201980021269.9A patent/CN111902925B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0530028U (ja) * | 1991-09-26 | 1993-04-20 | 花王株式会社 | 物品の緩衝装置 |
CN101091241A (zh) * | 2004-10-09 | 2007-12-19 | 布鲁克斯自动化公司 | 衬底处理装置 |
KR20140085947A (ko) * | 2012-12-28 | 2014-07-08 | 주식회사 원익아이피에스 | 기판처리장치 및 기판처리방법 |
WO2015056847A1 (en) * | 2013-10-16 | 2015-04-23 | Korea Electrotechnology Research Institute | Magnetically levitated transportation apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN111902925A (zh) | 2020-11-06 |
KR102284795B1 (ko) | 2021-08-03 |
KR20190111745A (ko) | 2019-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102479920B1 (ko) | 반도체 프로세스 장비 | |
JP4389424B2 (ja) | 被処理体の搬送機構及び処理システム | |
US9922854B2 (en) | Vertical inline CVD system | |
JP6328766B2 (ja) | 有機材料用の蒸発源、真空チャンバの中で有機材料を堆積させるための堆積装置、及び有機材料を蒸発させるための方法 | |
JP4578784B2 (ja) | 基板処理装置 | |
US8182608B2 (en) | Deposition system for thin film formation | |
KR102161185B1 (ko) | 기판의 진공 프로세싱을 위한 장치, 기판의 진공 프로세싱을 위한 시스템, 및 진공 챔버에서의 기판 캐리어 및 마스크 캐리어의 운송을 위한 방법 | |
KR102188702B1 (ko) | 증착 시스템 | |
CN103493178A (zh) | 用于原子层沉积的设备与工艺 | |
JP2002516243A (ja) | 磁気駆動装置を有する基板移送シャトル | |
JP2019518862A (ja) | 複数の材料を基板上に堆積するための真空システムおよび方法 | |
US11315818B2 (en) | Inline thin film processing device | |
CN216435860U (zh) | 载体运输系统和真空沉积系统 | |
KR20210062655A (ko) | 자기 부상 시스템, 자기 부상 시스템의 베이스, 진공 시스템, 및 진공 챔버에서 캐리어를 비접촉식으로 홀딩하고 이동시키는 방법 | |
CN111902925B (zh) | 线上薄膜处理装置 | |
CN101023509A (zh) | 基片处理系统 | |
CN109690751B (zh) | 基板处理装置 | |
KR20180056990A (ko) | 막 증착 장치 및 방법 | |
KR20190058443A (ko) | 증착 시스템에서의 캐리어의 비접촉식 이송을 위한 장치, 캐리어의 비접촉식 이송을 위한 시스템, 증착 시스템에서의 비접촉식 이송을 위한 캐리어, 및 증착 시스템에서의 캐리어의 비접촉식 이송을 위한 방법 | |
KR102359244B1 (ko) | 막 증착 방법 | |
JP2008199021A (ja) | 基板を処理するための設備における搬送装置 | |
KR102123482B1 (ko) | 진공 시스템에서 사용하기 위한 캐리어, 진공 프로세싱을 위한 시스템, 및 기판의 진공 프로세싱을 위한 방법 | |
CN105051879A (zh) | 具有光学测量的旋转式气体分配组件 | |
KR20150045805A (ko) | 박막증착장치 및 박막증착시스템 | |
WO2023222196A1 (en) | Carrier transport system, vacuum deposition system, and method of transporting carriers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |