CN111902925A - 线上薄膜处理装置 - Google Patents

线上薄膜处理装置 Download PDF

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CN111902925A
CN111902925A CN201980021269.9A CN201980021269A CN111902925A CN 111902925 A CN111902925 A CN 111902925A CN 201980021269 A CN201980021269 A CN 201980021269A CN 111902925 A CN111902925 A CN 111902925A
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susceptor
thin film
gas
film processing
substrate
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CN111902925B (zh
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洪瑛
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Abstract

所公开的薄膜处理装置包括：喷头，用于执行对沿输送轨道移动的基座上的衬底的薄膜处理；一或多个输送器，用于支撑基座，其中输送器可在相对于轨道浮动且不接触轨道时沿输送路径输送基座，且还可控制基座的高度以便调整从衬底到喷头的距离；以及输送器控制系统，用于控制输送器。

Description

线上薄膜处理装置
技术领域
本公开涉及薄膜处理设备且涉及：线上薄膜处理方法，其中在单个输送线中连续地执行若干处理；以及线上薄膜处理设备。
背景技术
通过循环原子层沉积(atomic layer deposition；ALD)方法，具有原子层厚度的高质量薄膜可在低温下在其上形成图案的衬底上均一地形成。此类循环ALD方法实际上和基本上应用于获得高介电常数(high-K)的高性能半导体动态随机存取存储器(DRAM)且制造超大规模集成(super large scale integration；S-LSI)产品。然而，因为薄膜形成速率缓慢，因此常规循环ALD方法在制造大面积产品的装置(例如显示器和太阳能电池)方面存在缺点。
空间(Spatial)ALD方法已应用于硅太阳能电池以及类似物的大批量生产且获得大量关注，但在大面积扩展和多组件薄膜沉积方面仍存在限制。
在由基座(suscepter)/衬底(substrate)的往复输送(reciprocatingtransport)执行的薄膜形成方法中，存在生成颗粒的问题和对应用于大面积产品的限制。此外，由于输送装置的重复加速度和停止而发生频繁机械故障。
在利用循环输送(circulating transport)的转盘方法中，并不易于确保薄膜形成的均一性(uniformity)，且难以扩展对应于大的显示器的大面积。
发明内容
技术问题
根据一示范性实施例，提供线上薄膜处理方法和线上薄膜处理设备，其呈现改良薄膜沉积速率且适合于制造大面积产品。
根据一示范性实施例，提供线上薄膜处理方法和线上薄膜处理设备，其有利于大面积扩展和多组件薄膜沉积。
问题的技术解决方案
根据一示范性实施例的线上薄膜处理设备具备：
至少一个隧道型处理腔室(tunnel-typed processing chamber)，安置于包括预定直线区段和弯曲区段的圆形输送轨道(circular transport track)上；
一或多个基座(susceptor)，其中的每一个沿输送轨道循环移动且包括在其上放置待处理衬底的载物台；
薄膜处理的喷头，执行对输送轨道上的衬底的薄膜处理且包括源气体供应模块、吹扫气体供应模块、反应气体供应模块以及排气模块中的至少一或多个；以及
一或多个输送器(transporter)，其中的每一个支撑基座，在相对于轨道浮动且不接触轨道时沿输送路径输送基座，且控制基座的高度以调整从衬底到喷头的距离。
根据一示范性实施例，输送器可具有磁悬浮型线性电动机的结构，驱动线圈可设置于轨道上，且对应于驱动线圈的永磁体可设置于输送器中。
根据一示范性实施例，控制系统可控制输送器的线性电动机以在线上处理装置中执行包含速度和方向的所有控制。
根据一示范性实施例，位置检测传感器可设置于基座中以检测腔室内部的基座的位置。
根据一示范性实施例，磁性保险杆设置于基座中以使用磁斥力来防止与另一基座的碰撞。
根据一示范性实施例，一个基座可由多个输送器支撑。
根据一示范性实施例，输送器可包含支撑基座的支撑部件，支撑部件可安装成使得控制相对于输送器的旋转，且支撑部件可在基座在弯曲区段上输送时使基座相对于输送器旋转。
根据一示范性实施例，气体模块可包含：喷嘴主体，具有用于将相关气体喷射到衬底的气体输入路径和回流路径；以及旋转喷嘴头，可旋转地安装到喷嘴主体且包含连接到气体输入路径的内部气体路径和用于将气体排出到外部的气体排出孔，其中根据气体排出孔的旋转来选择由基座支撑的衬底和喷嘴主体的回流路径中的一个，且引入其中的气体移动到所选一个。
公开内容的有利效应
根据一示范性实施例，用于沿通道内部的轨道输送基座的输送器在相对于轨道浮动且不接触轨道时移动。此类结构尽可能地抑制在现有机械移动结构中发生的振动和颗粒的生成。
根据一示范性实施例，取决于基座的大小而调整输送器的数目，且多个输送器可应用于一个基座，进而实现衬底的增大。
根据一示范性实施例，由于基座的高度可调整，因此可控制衬底与喷嘴之间的距离，且可通过精确控制以微米形式调整所述距离。
附图说明
图1示意性地绘示根据示范性实施例的薄膜处理设备的平面配置。
图2是绘示应用于图1中所说明的装置的输送器的一部分的横截面示意图。
图3是绘示应用于图1中所说明的装置的输送器的一部分的示意性正视图。
图4示意性地说明应用于示范性实施例的输送器的驱动线圈和永磁体的布置。
图5绘示通过示范性实施例中的输送器的水平驱动部件和竖直驱动部件的基座的竖直浮动和相对于轨道的水平对准。
图6说明其中圆形晶片或四边形面板安装到示范性实施例中的基座的状态。
图7示意性地绘示根据另一示范性实施例的薄膜处理设备的平面配置。
图8以三维形式绘示图7中说明的输送器的示意性结构。
图9说明在示范性实施例中的滑板与滑动底座之间的耦合结构。
图10是绘示其中多个输送器安装于根据示范性实施例的一个基座中的配置的透视图。
图11是绘示其中安装与根据示范性实施例的一个基座连结的多个输送器的配置的正视图。
图12说明用于根据示范性实施例的基座与基座的个别位置检测之间的碰撞防止的配置。
图13是具备根据示范性实施例的基座之间的碰撞防止的基座的局部透视图。
图14绘示通过根据示范性实施例的输送器的竖直驱动结构(高度调整结构)由于基座的高度调整引起的处理间隙的调整。
图15说明采取用于无线传输待供应到根据示范性实施例的基座的电功率的方法的无线功率传输部件。
图16是应用于示范性实施例的喷头的示意性透视图。
图17示意性地绘示图16中说明的喷头的结构。
图18示意性地绘示气体到衬底的供应或气体通过根据示范性实施例的旋转阀的旁路回流或馈送。
具体实施方式
下文中，将参考随附图式描述根据示范性实施例的线上薄膜处理设备。然而，实施例可以许多不同形式体现，且本公开的范围不应理解为限于以下实施例。实际上，提供本公开的示范性实施例以向本领域的一般技术人员更充分地解释本公开。相同参考标号在全文中指代相同元件。此外，示意性地说明图中的各种元件和区。因此，本公开并不限于随附图式中所说明的相对大小或间隔。
虽然如第一、第二等的术语用于描述各种组件，但这些组件不应受这些术语限制。这些术语仅用于将一个元件与另一元件区分开。举例来说，在不脱离本公开的范围的情况下，第一组件可称作第二组件，且类似地，第二组件可称作第一组件。
在本申请中，术语仅用于解释特定实施例且并不希望限制本公开。除非上下文另作明确指示，否则单数形式包含复数形式。在本申请中，应理解，本文中所使用的术语“包含”或“包括”指明所陈述特征、数目、步骤、操作、组件、元件或其组合的存在，但并不排除一或多个其它特征、数目、步骤、操作、组件、元件或其组合的存在或添加。
除非另外定义，否则本文中所使用的所有术语包含具有与本公开涉及的领域的一般技术人员所通常理解的相同的含义的技术术语或科学术语。此外，如常用词典中所定义的术语应理解为具有与相关联技术上下文中相同的含义，且不应解译为具有过度形式化含义，除非本公开中明确如此定义。
当某一实施例可以不同方式实施时，特定处理次序可与所描述次序不同地执行。举例来说，两个连续描述的处理可大体上同时执行或以与所描述次序相反的次序执行。
在图式中，例如根据制造技术和/或容限，可预期所说明形状的修改。因此，本公开的实施例不得解译为受图式中所说明的特定形状限制且必须包含例如在制造期间发生的形状的改变。本文中所使用的术语“和/或”包含所提及组件中的每一个和其一或多个组合。此外，说明书中使用的术语“衬底”可指衬底自身或诱发衬底的堆叠结构以及形成于衬底的表面上的预定层或膜。此外，在说明书中，“衬底的表面”可指衬底自身的暴露表面或形成于衬底上的预定层或膜的外部表面。
图1示意性地绘示根据示范性实施例的薄膜处理设备中的具有轨道的循环型腔室的平面配置，且在所述轨道上连续执行一个处理或多个循环处理。
如图1中所说明，腔室(10)具有两个平行直线区段和在直线区段的两侧上的弯曲区段的细长圆形循环路径(circulating path)。圆形输送轨道(circular transporttrack，20)安装在腔室(10)内部的底部中心上。轨道(20)可被修改或以各种形式开发。在其上安装处理中的衬底的基座(30)沿轨道(20)定位。沿轨道(20)浮动的(flying)输送器(40)设置于基座(30)下。基座(30)是在其上安装衬底的部件且其中具有加热器以热量衬底。衬底可通过真空吸引或静电力固定，或在一些情况下，可插入和固定到形成于基座(30)的表面上的衬底安放槽中。
输送器(40)在通过磁悬浮结构以及类似物浮动于轨道(20)上方时移动。输送器(40)可利用磁悬浮方法且由此可具有磁悬浮型线性感应电动机(下文中，称为线性电动机)的结构。线性感应电动机(linear induction motor)可在控制整个系统的控制装置的控制下在预定方向上移动。输送器(40)或基座(30)的速度可通过控制线性电动机来调整。
使用线性电动机的基座输送结构并不引起摩擦和振动，且因此，可显著解决由于摩擦和振动引起的问题。线性电动机的结构可根据熟知技术来设计成适于设置于轨道中的轨结构。输送器由分离设置的输送器控制系统控制，且这一控制系统可由控制整个薄膜处理的总体控制系统控制。
图2是绘示通道的内部的示意性部分横截面图以绘示利用上文所描述的线性电动机的输送器(40)的部分结构，且图3是输送器(40)的示意性正视图。
如图2和图3中所说明，腔室(10)具备在其上安装包含两个两侧对称轨(20a,20a)的轨道(20)的底部(10c)、在其上安装用于薄膜处理的喷头(50)的顶部(10d)以及两侧上的壁主体(10a,10b)。根据示范性实施例，当在其上安装衬底的基座(30)大时可使用两个轨，且当小时可使用一个轨。
待处理且在窄间隙下面向喷头(50)的四边形或圆形衬底(60)安装在基座(30)上，且沿轨道(20)的轨(20a,20a)移动的输送器(40)安装在衬底(60)下。
输送器(40)具有对应于轨(20a,20a)两者的对称线性电动机配置。也就是说，输送器(40)中的每一个包含具有永磁体阵列的移动部件(moving part，41)和对应于移动部件(41)的具有驱动线圈的静态部件(stator或static part，42)。包含移动部件(41)和静态部件(42)的输送器(40)对称地形成于基座(30)的底部的两侧上。
如图3中所说明，以上每一竖直轨(20a)设置于线圈固定板(42)下方，所述线圈固定板(42)具有作为构成水平驱动部件和竖直水平驱动部件的元件的分别形成水平磁场和竖直磁场的水平驱动线圈(42a)和竖直驱动线圈(42b)。在移动部件(41)中，具备分别对应于水平驱动线圈(42a)和竖直驱动线圈(42b)的水平驱动磁体(41a)和竖直驱动磁体(41b)。水平驱动线圈(42a)和水平驱动磁体(41a)属于水平驱动部件，且竖直驱动线圈(42b)和竖直驱动磁体(41b)属于竖直驱动部件。
图4示意性地说明布置于线性电动机的进展方向中的驱动线圈和永磁体。图4的配置应用于使用磁体与线圈之间的磁斥力的典型线性感应电动机的结构中。在图4中，箭头指示由于线圈与磁体之间的相互排斥引起的斥力的方向。此类结构可基于用于磁悬浮线性电动机的各种熟知技术而修改和改良。
图5说明基座(30)相对于轨道的竖直浮动和水平对准，其通过水平驱动部件和竖直驱动部件的水平驱动线圈(42a)和竖直驱动线圈(42b)连同对应于其的水平驱动磁体(41a)和竖直驱动磁体(41b)来进行。
在水平方向上，基座(30)通过在基座(30)下在两侧上彼此对称地布置的水平驱动线圈(42a)和面向其的水平驱动磁体(41a)与轨道的中心对准。在竖直方向上，基座(30)可由于竖直驱动磁体(41b)与对应其的竖直驱动线圈(42b)之间的磁斥力而浮动到预定高度。此处，衬底(60)与喷头(50)之间的距离可通过调整竖直浮动的程度控制。详细地说，衬底与喷头之间的距离可通过精细地调整具有竖直驱动部件的基座(30)的浮动高度在若干微米的范围加以控制。
图6说明其中圆形晶片(60a)或四边形面板(60b)作为衬底(60)安装在安装在如上文所描述的磁悬浮类型的输送器(40)上的基座(30)上的状态。
图7示意性地绘示根据另一示范性实施例的薄膜处理设备的平面配置。图7的薄膜处理设备具有如在车轮系统中其中多个输送器(410)布置于一个基座(30)中的配置。
参看图7，如图1的配置中所说明，腔室(10)具有两个平行直线区段和在直线区段的两侧上的弯曲区段的细长圆形循环路径(circulating path)。圆形轨道(20)安装在腔室(10)内部的底部中心上，且在其上安装衬底的多个基座(30)放置在轨道(20)上。在基座(30)的下部侧上，沿轨道(20)浮动的(flying)多个输送器(410)安装于基座(30)的前部和后部部分以及其间的中心部分中。
输送器(410)可具有如上文所描述的线性感应电动机的结构。此外，根据另一实施例，当基座(30)的大小小时，仅一个输送器(410)安装在一个基座(30)上。
图8以三维形式绘示图7的说明中提及的输送器(410)的示意性结构。
参考图8，输送器(410)包含对称地形成在轨(20c)的两侧上的L形移动框架或移动部件(411,411)。如上文所描述的水平和竖直驱动磁体(411a,412a)安装于L形移动部件(411,411)中的每一个中。这些L形移动部件(411,411)由连结耦合的支撑臂(413)彼此连接。支撑臂(413)的两个末端通过设置于L形移动部件(411,411)两者上的枢轴(pivot,414)连接，且因此，支撑臂(413)可相对于L形移动部件旋转。基座支撑杆(416)从支撑臂(413)的中心可自旋转地站立，且使基座(30)在一个方向上旋转和移动的滑块组件(418)设置于基座支撑杆(416)的上部末端处。滑块组件(418)包含相对于彼此滑动的滑动导板(418a)和滑动底座(418b)。
图9说明导板(418a)和滑动底座(418b)的耦合结构，其中(a)为横向截面视图，且(b)为导板(418a)底座(418b)纵向横截面图。
参考图9的(a)和(b)，导板(418a)可滑动地安装在滑动底座(418b)下的线性运动导引部件(418c')上。因此，滑动底座(418b)可在一个方向上相对于导板(418a)往复运动。
根据上文所描述的基座的旋转和往复结构，基座(30)的位置可通过滑动底座(417)在水平方向上改变，且基座(30)可通过具有在其上固定导板(418a)的上部末端的可旋转基座支撑杆(416)旋转。因此，基座(30)可在水平方向上相对于输送器(410)旋转和改变位置。虽然在图式中未绘示，但电磁体安置于导板的两个末端上，且因此，当滑动底座在直线区段中移动时，滑动底座可返回到中心位置。为避免绘制中的复杂度和辅助本公开的理解，可在以下图式中省略所述板和滑动底座。
图10是绘示其中多个输送器(410)安装在如在图7的说明中所提及的一个基座(30)上的结构的透视图，且图11是所述结构的正视图。
参考图10和图11，竖直单轨(20b)形成于腔室(10)的底部中心中，且水平平台(421)安装在轨(20b)上。平台(421)的两个末端充当对应于L形移动部件(41,41)的静态部件。为这个目的，对应于L形移动部件(41,41)两者中的每一个的水平驱动磁体和竖直驱动磁体的水平驱动线圈(42a)和竖直驱动线圈(42b)安装在静态部件平台(421)的两个末端中的每一个的对应位置处。
此处，对应于一个基座(30)的多个输送器(410)未说明于图式中但可通过适当连结结构彼此连结。在图10和图11中，参考标号“419”指示连接多个输送器(410)的连接臂。这一臂充当连结结构的一个元件。连接臂(419)维持输送器(410)之间的恒定距离且使支撑杆((416)和支撑臂(413)中的每一个旋转。
图12说明配备有碰撞防止保险杆和用于防止基座与基座的个别检测位置之间的碰撞的位置检测传感器的基座，且图13示意性地和部分地说明在其上安装碰撞防止保险杆和传感器的两个相邻基座。
首先，参考图12和图13，使用磁体的排斥的碰撞防止保险杆(31)安装在喷头(50)下通过的两个基座(30)中的每一个的两侧末端上。此处，提供关于当基座(30)通过时基座(30)的位置的信息的导向光源(61)设置于喷头(50)的一侧上，且接收所述信息的传感器(62)设置于基座(30)中的每一个中。基座(30)的碰撞防止保险杆(31)和相邻另一基座(30)的碰撞防止保险杆(31)由于相互磁斥力而彼此远离，且因此，可防止在轨道上行进的基座(30)之间的碰撞。
设置于基座(30)中的传感器(62)识别相对于喷头(50)的位置且使用位置信息。因此，举例来说，仅允许在喷头(50)的气体喷嘴阵列的有效沉积区域(zone)中执行用于薄膜形成或蚀刻中的薄膜的相关处理。
期望使用光学方法，其中光源和传感器用于确定用于上文所描述的薄膜处理的基座的位置。然而，可应用现有熟知的其它技术，如机械或电中断方法。
图14绘示通过输送器(40)的竖直驱动结构(高度调整结构)由于基座(30)的高度(h2)调整引起的处理间隙(h1)的调整。根据示范性实施例，输送器(40)也执行如上文所描述的基座(30)的高度调整。
如图14中所说明，基座(30)的高度调整意谓与喷头(50)的喷嘴的间隙调整，且由根据示范性实施例的磁悬浮方法(即，通过上文所描述的竖直驱动线圈(42b)和竖直驱动磁体(41b))执行。此处，悬浮高度可通过调整用于竖直驱动线圈(42b)的驱动电压以微米形式精细地加以控制。这一竖直高度控制可由薄膜处理设备中的控制系统的控制算法执行。喷头(50)与基座(30)之间的间隙(h1)可由分离安装的高度测量单元(如传感器)测量，且可间接地使用所述间隙来识别悬浮高度(h1)。
此处，若干电气装置可安装于基座(30)中，且需要向其供应电功率。电功率的这一供应按以下方式进行，其中如图13中所说明，通过包含沿轨道安装的轨形电源部件(71)和在电源部件(电源轨，71)上滑动的受电弓型功率接收部件72的滑动型输电部件70从道的下部侧供应电功率。
图15说明采取用于无线传输待供应到基座(30)的电功率的方法的无线功率传输部件(80)。
无线功率传输部件(80)利用其中电功率由电场感应传输的方法，且包含输送器(40)的移动部件(41)、在对应通道的底部处的电源线圈(81)以及功率接收线圈(82)。由于此类无线电源部件(90)在传输电功率上具有限制，因此用于存储由输电部件(90)供应的电功率的电池(93)可设置于基座(30)下。电池(93)由基座(30)下的隔热层保护且存储由输电部件(90)供应的电功率。这种无线充电方法还可由磁共振而非磁感应执行。
图16是应用于示范性实施例的喷头(50)的示意性透视图。
用于将气体供应到安装到基座(30)的衬底(60)的喷头(50)包含多个气体喷嘴头(51)，且吹扫气体供应头或排气头(52)可设置于气体喷嘴头(51)之间。喷嘴头(51)中的每一个包含气体供应管(51a)和回流管(51b)，且用于排出气体的多个气体排出口(52)形成于旋转阀(53)中。
喷头(50)的旋转阀(53)取决于基座(30)的位置而调节反应气体的供应。也就是说，当基座(30)在旋转阀(53)下通过时，使朝向基座(53)供应反应气体，且因此，反应气体供应到基座(30)上的衬底(60)。此外，当基座(30)远离喷头(50)时，旋转阀(53)切断反应气体的供应且经由其中的气体旁路使反应气体回流。这可通过图17和图18的说明更深一步地理解。
图17是绘示在用于供应气体且设置于在图16中说明的喷头(50)中设置的多个个别喷嘴头(51)中的每一个的主体内部的气体腔室(51a)与具有喷嘴的旋转阀(51b)之间的关系的透视图，所述喷嘴使气体从气体腔室(51a)排出到衬底且在另一方向上旁路进而将气体发送到回流罐。
参看图17，从外部注入的气体流入储器(reservoir，51a)中且存储在其中，且从外部切断存储于储器(51a)中的气体且使所述气体通过旋转阀(53)排出到外部。具有通孔的过滤板(51a',51a”)设置于储器(51a)上和其下，从所述通孔引入和排出气体使得气体喷射是均一的。旋转阀(53)具有：一个直线形主气体通路(53a)，其末端部分具备用于朝向衬底排出气体的出口；以及气体旁路(53b)，其从主气体通路(53a)的中间延伸。根据另一示范性实施例，直线形主气体通路中的面向衬底的出气口可形成为呈细长狭缝形状。
图18示意性地绘示气体到衬底的供应，或气体通过旋转阀(53)的旁路回流或馈送。在图18的(a)中，说明一种状态，其中旋转阀(53)定位于第一位置处以用于将气体供应到衬底，且来自储器(51a)的气体可向下移动且朝向衬底排出。此外，在图18的(a)中，旋转阀(53)定位于第二位置处以用于切断气体到衬底的供应，且气体经由旁路(51c)馈送到外部而不关闭来自腔室(51a)的气体。
根据示范性实施例，喷头的每一喷嘴头的出气口由旋转核壳圆筒型阀门(coreshell cylinder type valve)提供，且气体可供应到衬底上且经由旁路(51c)排出到储器(51a)的外部以供重新使用。
旋转阀(53)可由分离驱动装置操作且瞬时地切换气体的注入或回收(回流)。在这一操作中，操作位置可由设置于基座中的传感器以及类似物确定。这一操作方法可解决当衬底并不存在时源气体流入储器且生成(产生)颗粒的问题。
根据上文所描述的示范性实施例的薄膜处理设备的轨道或腔室可以各种形式体现。举例来说，轨道或腔室可具有具备如图1中所说明的弯曲区段和直线区段的简单圆形形状。根据另一实施例，用于上文所描述的处理的多个圆形轨道密集地封装且彼此相关联，且直线区段和弯曲区段取决于设计条件以各种形式布置。负载锁定腔室(load lockchamber)设置于用于处理的腔室之间，且因此，衬底可输送到另一腔室而不暴露于大气。
为较好地理解，已参考图式中所说明的实施例描述了根据本发明的实施例的制造半导体装置的方法，但所述实施例仅仅是说明性的。因此，本领域的技术人员应理解，来自所述实施例的各种修改和其它等效实施例是可能的。因此，本发明的真实技术防范范围应通过随附权利要求书确定。

Claims (9)

1.一种薄膜处理设备，包括：
至少一个隧道型处理腔室，安置于包括预定直线区段和弯曲区段的圆形输送轨道上；
一或多个基座，其中的每一个沿所述输送轨道循环移动且包括在其上放置待处理衬底的载物台；
薄膜处理喷头，执行对所述输送轨道上的所述衬底的薄膜处理且包括源气体供应模块、吹扫气体供应模块、反应气体供应模块以及排气模块中的至少一或多个；以及
一或多个输送器，其中的每一个支撑所述基座，在相对于所述轨道浮动且不接触所述轨道时沿所述输送轨道输送所述基座，且控制所述基座的高度以调整从所述衬底到所述喷头的距离，
其中所述喷头设置有多个喷嘴头，且包括气体路径切换阀，所述气体路径切换阀中的每一个在所述基座进入所述喷头下方时，使气藏和所述气藏的气体朝向所述衬底移动，且在所述基座远离所述喷头时使所述气藏的所述气体移动到设置于所述喷嘴头中的每一个的主体中的旁路。
2.根据权利要求1所述的薄膜处理设备，其中所述输送器具有磁悬浮型线性电动机的结构。
3.根据权利要求2所述的薄膜处理设备，其中所述输送器包括设置于所述基座上的移动部件和设置于所述轨道上的静态部件。
4.根据权利要求1所述的薄膜处理设备，其中所述输送器包括水平驱动部件和竖直驱动部件以分别调整所述基座在水平方向和竖直方向上的位置。
5.根据权利要求1到4中任一项所述的薄膜处理设备，其中位置检测传感器设置于所述基座中以检测所述腔室内部的所述基座的位置。
6.根据权利要求1所述的薄膜处理设备，其中磁性保险杆设置于所述基座中以使用磁斥力来防止与另一基座的碰撞。
7.根据权利要求1所述的薄膜处理设备，其中所述输送器包括支撑部件，所述支撑部件支撑所述基座以使得所述基座被循环输送。
8.根据权利要求7所述的薄膜处理设备，其中所述支撑部件设置有使所述基座在一个方向上往复运动的滑块组件，且所述滑块组件包括固定在所述基座下方的导板和与所述导板可滑动地耦合的滑动底座。
9.根据权利要求1到4中任一项所述的薄膜处理设备，其中使所述储器的所述气体朝向所述衬底移动的主气体通路和连接到所述主气体通路且使所述气体移动到所述旁路的气体路径设置于所述气体路径切换阀内部。
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