CN111900615A - Semiconductor laser structure and stacked array - Google Patents
Semiconductor laser structure and stacked array Download PDFInfo
- Publication number
- CN111900615A CN111900615A CN202010750667.9A CN202010750667A CN111900615A CN 111900615 A CN111900615 A CN 111900615A CN 202010750667 A CN202010750667 A CN 202010750667A CN 111900615 A CN111900615 A CN 111900615A
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- laser chip
- semiconductor
- semiconductor laser
- layer
- negative electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
Abstract
The invention provides a semiconductor laser structure and a stacked array, wherein the semiconductor laser structure comprises a laser chip, a positive electrode and a negative electrode, the positive electrode and the negative electrode are respectively bonded on the P surface and the N surface of the laser chip, and a conductive structure connected with the laser chip in parallel is arranged between the positive electrode and the negative electrode, so that reverse voltage forms a reverse current path through the conductive structure. The invention ensures that the reverse voltage or the reverse current can not break down the laser chip and basically can not influence the light output power of the laser chip.
Description
Technical Field
The invention relates to a semiconductor laser structure and a stack array, in particular to a semiconductor laser with an anti-reverse breakdown structure.
Background
Semiconductor lasers are one type of semiconductor devices and one of the core problems encountered during application is reverse breakdown. Because external circuit to power supply circuit's interference can make the power produce reverse voltage in pulse work, when reverse voltage is great, can cause reverse breakdown to the chip, and then form the burn and lead to the product to become invalid.
At present, adding a backward diode on an external circuit is an effective method for avoiding backward breakdown, however, the volume of a semiconductor laser is very small, the backward diode usually needs a proper socket, and there is usually not enough space for installation in a semiconductor laser device.
Disclosure of Invention
In order to solve the above problems, the present invention provides a semiconductor laser structure and a stacked array, which can solve the problem of reverse breakdown of a semiconductor laser.
The technical scheme of the invention is as follows:
a semiconductor laser structure comprises a laser chip, a positive electrode and a negative electrode, wherein the positive electrode and the negative electrode are respectively bonded on the P surface and the N surface of the laser chip, and a conductive structure connected with the laser chip in parallel is arranged between the positive electrode and the negative electrode, so that reverse voltage forms a reverse current path through the conductive structure.
The conductive structure specifically comprises one or more of gold, silver, copper, iron, aluminum, constantan, nickel-chromium-iron and iron-chromium-aluminum.
The conductive structure is specifically a gold wire, or an aluminum wire, or a copper wire connecting the positive electrode and the negative electrode.
Optionally, an insulating layer is disposed between the positive electrode and the negative electrode, and the conductive structure is a conductive channel penetrating through the insulating layer.
Optionally, in the semiconductor laser structure of the present invention, the conductive structure is a semiconductor layer disposed between a positive electrode and a negative electrode, a P-pole region of the semiconductor layer is in contact with the negative electrode, and an N-pole region of the semiconductor layer is in contact with the positive electrode, so that the semiconductor layer forms a PN junction opposite to the laser chip.
The semiconductor layer is specifically Si, or GaAs, or InP.
The utility model provides a semiconductor laser stacks array, includes a plurality of semiconductor laser structure, the negative electrode is the heat sinking piece, and the positive electrode is the electrode slice, laser chip bond in between heat sinking piece and the electrode slice, heat sinking piece inside is provided with liquid refrigeration passageway.
The utility model provides a semiconductor laser stacks array, includes a plurality of semiconductor laser structure, positive electrode and negative electrode are the conducting substrate who matches with laser chip coefficient of thermal expansion, laser chip and conducting substrate interval arrangement form and stack the array structure, conducting structure sets up between the conducting substrate as positive electrode and negative electrode and conducting structure and conducting substrate interval arrangement.
The utility model provides a semiconductor laser structure, specifically is at least including the P face metal level that sets gradually, insulating layer, the laser chip of N face metal level, be provided with the conducting structure who pierces through the insulating layer at least between the P face metal level of laser chip and the N face metal level for reverse voltage forms the reverse current route through conducting structure.
The conductive structure is an extension part of the P-surface metal layer towards the N surface, and at least penetrates through the insulating layer inside the laser chip.
The invention has the following advantages: the semiconductor laser structure and the stacked array provided by the invention have the advantages that on one hand, the light emitting power of the laser chip is basically not influenced, and on the other hand, the reverse voltage or the reverse current is ensured not to break down the laser chip.
Drawings
Fig. 1 shows an embodiment of a semiconductor laser structure according to the present invention.
Fig. 2 is an equivalent circuit schematic of a semiconductor laser structure.
Fig. 3 shows a second embodiment of a semiconductor laser structure according to the present invention.
Fig. 4 shows a third embodiment of the semiconductor laser structure according to the present invention.
Fig. 5 shows an embodiment of a stacked array of semiconductor lasers according to the present invention.
Fig. 6 shows a second embodiment of a stacked array of semiconductor lasers according to the present invention.
Fig. 7 shows a fourth embodiment of the semiconductor laser structure of the present invention.
Fig. 8 is a preferred embodiment of the fourth embodiment of fig. 7.
The reference numbers illustrate: 1-laser chip, 2-negative electrode, 3-positive electrode, 4-conductive structure, 5-insulating layer, 401-conductive channel, 402-N pole region of semiconductor layer, 403-P pole region of semiconductor layer, 6-heat sink, 7-insulating structure, 101-equivalent resistance R1 of laser chip, 102-equivalent PN junction of laser chip, 404-equivalent resistance R2 of conductive structure, 8-power supply, 103-P face metal layer, 104-P face contact layer, 105-cladding layer, 107-waveguide layer, 108-quantum well layer, 109-substrate, 106-N face metal layer.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a semiconductor laser structure, which comprises a laser chip 1, a positive electrode 3 and a negative electrode 2, wherein the positive electrode 3 and the negative electrode 2 are respectively bonded on the P surface and the N surface of the laser chip 1, and a conductive structure 4 connected with the laser chip 1 in parallel is arranged between the positive electrode 3 and the negative electrode 2, so that reverse voltage forms a reverse current path through the conductive structure.
The material of the conductive structure 4 can be selected from metal, including one or more of gold, silver, copper, iron, aluminum, constantan, nickel-chromium-iron, and iron-chromium-aluminum.
The P-side and the N-side of the laser chip respectively refer to a contact surface (i.e., a positive electrode) of a P-region and a contact surface (i.e., a negative electrode) of an N-region of a PN junction of the laser chip.
The embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 shows a first embodiment of the present invention, in which the conductive structure 4 is a metal connecting member connecting the positive electrode 3 and the negative electrode 2, and an equivalent resistance of the metal connecting member is much smaller than an equivalent series resistance of the laser chip before being turned on and much larger than the equivalent series resistance of the laser chip after being turned on. Optionally, an insulating layer 5 is disposed between the positive electrode 3 and the negative electrode 2. Specifically, the metal connecting piece is a metal wire, specifically a gold wire, or an aluminum wire, or a copper wire.
It should be noted that, the invention adopts the metal wire to connect the positive electrode and the negative electrode, and the short circuit of the current loop of the laser chip and the obvious loss of the output power do not occur. As shown in fig. 2, the laser chip 1 may be equivalent to a PN junction 102 and an equivalent resistor R1 (101) connected in series, the conductive structure 4 may be equivalent to an equivalent resistor R2 (404) connected in parallel with the PN junction 102 and the resistor R1, and the power supply 8 is connected to the positive electrode 3 and the negative electrode 2 for supplying power to the laser chip 1. The working state of the laser chip 1 is divided into the following two working states: 1) the voltage provided by the power supply 8 is smaller than the starting voltage of the laser chip, the resistance value of the equivalent resistor R2 of the conductive structure 4 is far smaller than the equivalent resistor R1 of the laser chip, when reverse voltage appears at two ends of the laser chip 1, reverse current can be led out through the bypass resistor R2 (404), and the effect of protecting the laser chip is achieved; 2) the voltage that the power provided is greater than laser chip's opening voltage for laser chip 1 is in the state of normal work, and the resistance of conducting structure 4's equivalent resistance R2 is greater than laser chip's equivalent resistance R1 far away this moment, and operating current mainly flows through from laser chip, and the electric current through bypass resistance R2 (404) is very weak, consequently can not cause laser chip 1's short circuit, and also very weak to laser chip 1's output power influence, if reverse voltage appears this moment. The PN junction 102 is turned off in the reverse direction, and the reverse current is turned on through the resistor R2 (404), thereby protecting the laser chip.
Fig. 3 shows a second embodiment of the present invention, an insulating layer 5 is disposed between the positive electrode 3 and the negative electrode 2, and the conductive structure 4 is a conductive channel 401 penetrating through the insulating layer.
The upper surface and the lower surface of the insulating layer 5 are respectively provided with a metallization layer, and the insulating layer is specifically ceramic, or PI ((polyimide)), or PCB. It should be noted that the material of the conductive channel 401 has a low temperature resistivity coefficient, so that the resistivity of the conductive channel does not change much with temperature, and the influence on the output power of the laser chip is reduced. In particular, the temperature resistivity coefficient<5*10-3/℃(0~100℃)。
Fig. 4 shows a third embodiment of the present invention, in which the conductive structure 4 is specifically a semiconductor layer disposed between the positive electrode 3 and the negative electrode 2, a P-pole region 403 of the semiconductor layer is in contact with the negative electrode 2, and an N-pole region 402 of the semiconductor layer is in contact with the positive electrode 3, so that the semiconductor layer forms a PN junction with a polarity opposite to that of the PN junction of the laser chip.
The scheme has the following beneficial effects: the reverse voltage generated by the external circuit can enable the PN junction of the semiconductor layer to be conducted, reverse breakdown of the laser chip is avoided, the forward voltage only acts on the laser chip, the semiconductor layer cannot be conducted, and the semiconductor layer only has the function of an insulating layer at the moment.
The semiconductor layer is specifically Si, GaAs or InP, and forms a PN junction after doping.
The invention provides a semiconductor laser stacked array which comprises a plurality of semiconductor laser packaging structures. As shown in fig. 5, in the first embodiment of the stacked array of semiconductor lasers according to the present invention, the negative electrode 2 is a heat sink, the positive electrode 3 is an electrode plate, the laser chip is bonded between the heat sink and the electrode plate, and a liquid cooling channel is disposed inside the heat sink.
It should be noted that, the positive electrode and the negative electrode both refer to the electrode in contact with the laser chip or the conducting structure, and the structure in which the positive electrode and the negative electrode are interchanged or the structure in which the laser chip is reversely mounted should be considered as equivalent alternatives of the present invention, including but not limited to the embodiment in which the positive electrode employs the heat sink, the negative electrode employs the electrode plate, and the embodiment in which the positive electrode and the negative electrode employ the heat sink.
Fig. 6 is a second embodiment of the semiconductor laser stacked array according to the present invention, which includes a plurality of semiconductor laser package structures, where the positive electrode 3 and the negative electrode 2 are both conductive substrates matched with the thermal expansion coefficient of the laser chip 1, and the laser chip 1 and the conductive substrates are arranged at intervals to form a stacked array structure. The conductive structure 4 is arranged between the conductive substrates as the positive electrode and the negative electrode, and the conductive structure and the conductive substrates are arranged at intervals.
Specifically, the semiconductor laser stack array further comprises a radiator 6, the stack array structure is arranged on the radiator along the vertical direction of the stacking direction of the laser chip and the conductive substrate, the radiator is made of ceramic or metal, and a liquid refrigeration channel can be arranged inside the radiator.
Optionally, an insulating structure 7 is disposed between the heat spreader and the conductive substrate.
The invention also provides a semiconductor laser structure which comprises a laser chip 1, wherein the laser chip comprises a P-surface metal layer 103, a P-surface contact layer 104, a cladding layer 105, an insulating layer 5, a quantum well layer 108, a waveguide layer 107, a substrate 109 and an N-surface metal layer 110 which are sequentially arranged. As shown in fig. 7, in a normal operating state of the laser chip, current is injected into the laser chip from the P-side metal layer 103 and the P-side contact layer 104 in the middle, the region has no insulating layer, and the remaining region includes the insulation 106, so that the current cannot penetrate through the insulating layer.
A conductive structure 4 penetrating through an insulating layer 5 is arranged between the P surface and the N surface of the laser chip, so that reverse voltage forms a reverse current path through the conductive structure. Specifically, the conductive structure 4 is an extension portion of the P-side metal layer 103 towards the N-side, and penetrates at least the insulating layer 5 inside the laser chip, so that the insulating layer forms a conductive channel in a region other than the P-side contact layer 104.
Optionally, the conductive structure 4 is formed by extending the P-side metal layer 103 to the N-side, penetrating through the insulating layer 106 and the quantum well layer 108, and directly contacting the waveguide layer 107.
Optionally, the conductive structure 4 is formed by extending the P-side metal layer 103 to the N-side through the insulating layer 5, the quantum well layer 108 and the waveguide layer 107, and directly contacts the cladding layer 105.
Optionally, the conductive structure 4 is formed by extending the P-side metal layer 103 to the N-side through the insulating layer 5, the quantum well layer 108, the waveguide layer 107 and the cladding layer 105, and directly contacting the substrate 109.
Alternatively, as shown in fig. 8, the conductive structure 4 is formed by extending the P-side metal layer 103 to the N-side through the insulating layer 5, the quantum well layer 108, the waveguide layer 107, the cladding layer 105 and the substrate 109, and directly contacting the N-side metal layer 110.
Specifically, the P-side metal layer 103 is a metalized gold plating layer.
It should be noted that the present invention does not limit the specific structure of the laser chip, and the laser chip structure having the conductive structure 4 penetrating through the insulating layer should be considered as being within the protection scope of the present invention.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A semiconductor laser structure comprises a laser chip, a positive electrode and a negative electrode, wherein the positive electrode and the negative electrode are respectively bonded on the P surface and the N surface of the laser chip.
2. A semiconductor laser structure according to claim 1, characterized in that the electrically conductive structure comprises in particular one or more of gold, silver, copper, iron, aluminum, constantan, nickel-chromium-iron, iron-chromium-aluminum.
3. A semiconductor laser structure according to claim 2, characterized in that the electrically conductive structure is in particular a gold wire, or an aluminum wire, or a copper wire connecting the positive and negative electrodes.
4. A semiconductor laser structure as claimed in claim 2 wherein an insulating layer is disposed between the positive and negative electrodes, and the conductive structure is a conductive via through the insulating layer.
5. The semiconductor laser structure of claim 1, wherein the conductive structure is a semiconductor layer disposed between a positive electrode and a negative electrode, the P-pole region of the semiconductor layer being in contact with the negative electrode and the N-pole region being in contact with the positive electrode such that the semiconductor layer forms an opposing PN junction with the laser chip.
6. A semiconductor laser structure as claimed in claim 5 wherein the semiconductor layer is in particular Si, or GaAs, or InP.
7. A stack of semiconductor lasers comprising a plurality of semiconductor laser structures according to any of claims 1-6, characterized in that: the negative electrode is a heat sinking block, the positive electrode is an electrode plate, the laser chip is bonded between the heat sinking block and the electrode plate, and a liquid refrigeration channel is arranged inside the heat sinking block.
8. A stack of semiconductor lasers comprising a plurality of semiconductor laser structures according to any of claims 1-6, characterized in that: the laser chip and the conductive substrate are arranged at intervals to form a stacked array structure, and the conductive structure is arranged between the conductive substrates serving as the positive electrode and the negative electrode and is arranged at intervals with the conductive substrate.
9. A semiconductor laser structure at least comprises a P-surface metal layer, an insulating layer and a laser chip of an N-surface metal layer which are sequentially arranged, and is characterized in that a conductive structure which at least penetrates through the insulating layer is arranged between the P-surface metal layer and the N-surface metal layer of the laser chip, so that reverse voltage forms a reverse current path through the conductive structure.
10. A semiconductor laser structure as claimed in claim 9 wherein the electrically conductive structure is an extension of the P-plane metal layer to the N-plane and extends through at least the insulating layer inside the laser chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010750667.9A CN111900615A (en) | 2020-07-30 | 2020-07-30 | Semiconductor laser structure and stacked array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010750667.9A CN111900615A (en) | 2020-07-30 | 2020-07-30 | Semiconductor laser structure and stacked array |
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| CN111900615A true CN111900615A (en) | 2020-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010750667.9A Pending CN111900615A (en) | 2020-07-30 | 2020-07-30 | Semiconductor laser structure and stacked array |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023137816A1 (en) * | 2022-01-19 | 2023-07-27 | 刘海龙 | Zero-point energy bioenergy power generation device for reverse electricity |
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| CN206806726U (en) * | 2017-05-16 | 2017-12-26 | 西安炬光科技股份有限公司 | The encapsulating structure of semiconductor laser |
| CN109950789A (en) * | 2019-04-11 | 2019-06-28 | 江苏天元激光科技有限公司 | A kind of electrode welding structure of laser bar item |
| CN110957636A (en) * | 2019-12-10 | 2020-04-03 | 海南师范大学 | High-peak power 1550nm laser diode chip and preparation method thereof |
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2020
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0951142A (en) * | 1995-08-04 | 1997-02-18 | Fujitsu Ltd | Semiconductor light emitting element |
| US20060194355A1 (en) * | 2002-12-27 | 2006-08-31 | Franz Eberhard | Laser diode bar provided with a parallel connected diode for bridging said laser siode bar in case of failure |
| CN105244426A (en) * | 2015-10-27 | 2016-01-13 | 天津三安光电有限公司 | Structure capable of preventing light-emitting diode from being broken down by reverse voltage and manufacturing method thereof |
| CN205646432U (en) * | 2016-03-08 | 2016-10-12 | 西安绿竹电子科技有限公司 | Semiconductor laser drive circuit |
| CN206806726U (en) * | 2017-05-16 | 2017-12-26 | 西安炬光科技股份有限公司 | The encapsulating structure of semiconductor laser |
| CN109950789A (en) * | 2019-04-11 | 2019-06-28 | 江苏天元激光科技有限公司 | A kind of electrode welding structure of laser bar item |
| CN110957636A (en) * | 2019-12-10 | 2020-04-03 | 海南师范大学 | High-peak power 1550nm laser diode chip and preparation method thereof |
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| WO2023137816A1 (en) * | 2022-01-19 | 2023-07-27 | 刘海龙 | Zero-point energy bioenergy power generation device for reverse electricity |
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Application publication date: 20201106 |