CN210956687U - Long-life paster diode structure - Google Patents

Long-life paster diode structure Download PDF

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Publication number
CN210956687U
CN210956687U CN201922380520.0U CN201922380520U CN210956687U CN 210956687 U CN210956687 U CN 210956687U CN 201922380520 U CN201922380520 U CN 201922380520U CN 210956687 U CN210956687 U CN 210956687U
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China
Prior art keywords
life
extension
installation department
chip
long
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Active
Application number
CN201922380520.0U
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Chinese (zh)
Inventor
范芳芳
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Semtech Semiconductor Technology Dongguan Co Ltd
Original Assignee
Zhongzhi Semiconductor Technology Dongguan Co ltd
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Priority to CN201922380520.0U priority Critical patent/CN210956687U/en
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Publication of CN210956687U publication Critical patent/CN210956687U/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape

Abstract

The utility model provides a long-life paster diode structure, including the paster diode, the paster diode includes plastic packaging body, cladding and is in inside chip of plastic packaging body, connect respectively two electrode slices at both ends about the chip, both ends all are equipped with the extension about the plastic packaging body, the electrode slice include with the contact site that the chip is connected, connect the kink of contact site one end, connect the installation department of kink one end, the installation department is worn out the extension outside, the installation department lower extreme is connected with the busbar. The utility model discloses a paster diode increases at both ends about the plastic packaging body has the extension, and when the installation department of extension terminal surface broke off in the use, the protective material of extension was rejected to the accessible, made inboard installation department expose, and the busbar of welding avoids the paster diode to scrap, prolongs its life.

Description

Long-life paster diode structure
Technical Field
The utility model relates to a diode technical field, concretely relates to long-life paster diode structure.
Background
A diode, also called a crystal diode, is a device having two electrodes and allowing current to flow in only a single direction. The most common function of a diode is to allow current to pass in only one direction, known as forward bias, and to block in the reverse direction, known as reverse bias. Thus, the diode can be thought of as an electronic version of the check valve. A part of the semiconductor silicon or germanium is doped with a trace of trivalent element boron to form a P type semiconductor, and the other part of the semiconductor silicon or germanium is doped with a trace of pentavalent element phosphorus to form an N type semiconductor. A PN junction is formed at the junction of the P-type and N-type semiconductors. A PN junction is a diode, a lead wire of a P area is called an anode, and a lead wire of an N area is called a cathode.
In the chip diode in the prior art, electrode plates on two end faces of a plastic packaging body are easy to break in a long-term use process, the broken diode cannot be used continuously, and the service life is short.
SUMMERY OF THE UTILITY MODEL
To the above problem, the utility model provides a long-life paster diode structure.
In order to achieve the above object, the present invention provides the following technical solutions:
the utility model provides a long-life paster diode structure, includes the paster diode, the paster diode includes the plastic packaging body, the cladding is in the inside chip of plastic packaging body, connect respectively two electrode slices at both ends about the chip, both ends all are equipped with the extension about the plastic packaging body, the electrode slice include with the contact site that the chip is connected, connect the kink of contact site one end, connect the installation department of kink one end, the installation department is worn out the extension outside, the installation department lower extreme is connected with the busbar.
Specifically, the bus bar includes an upper welding portion connected to the mounting portion, a conductive portion connected to a lower end of the upper welding portion, and a lower welding portion connected to a lower end of the conductive portion.
Specifically, the mounting portion is welded to the upper welding portion.
Specifically, the upper end and the lower end of the inner side of the plastic package body are also provided with heat conducting plates, and the upper end face and the lower end face of the plastic package body are both provided with a plurality of heat conducting grooves.
Specifically, the end face of the plastic packaging body close to one side of the extending part is provided with a ceramic coating.
The utility model has the advantages that:
the utility model discloses a paster diode increases at both ends about the plastic packaging body has the extension, and when the installation department of extension terminal surface broke off in the use, the protective material of extension was rejected to the accessible, made inboard installation department expose, and the busbar of welding avoids the paster diode to scrap, prolongs its life.
Drawings
Fig. 1 is a schematic structural diagram of a long-life patch diode structure of the present invention.
Fig. 2 is a schematic structural diagram of a long-life patch diode structure according to the present invention.
The reference signs are: the package comprises a plastic package 1, an extension 11, a heat conduction groove 12, a chip 2, an electrode plate 3, a contact portion 31, a bending portion 32, a mounting portion 33, a conductive strip 4, an upper welding portion 41, a conductive portion 42, a lower welding portion 43, a heat conduction plate 5 and a ceramic plating layer 6.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
As shown in fig. 1-2:
the utility model provides a long-life paster diode structure, including the paster diode, the paster diode includes plastic packaging body 1, the cladding is at the inside chip 2 of plastic packaging body 1, connect two electrode slices 3 at chip 2 upper and lower both ends respectively, plastic packaging body 1 left and right sides both ends all are equipped with extension 11, electrode slice 3 includes the contact site 31 of being connected with chip 2, connect the kink 32 in contact site 31 one end, connect the installation department 33 in kink 32 one end, install the portion 33 and wear out the 11 outsides of extension, installation department 33 lower extreme is connected with the busbar 4, when the fracture takes place in the use as installation department 33 of 11 terminal surfaces of extension, the protective material of extension 11 is rejected to the accessible, make inboard installation department 33 expose, the busbar 4 welds again, avoid the paster diode to scrap, prolong its life.
Preferably, the conductive strip 4 includes an upper soldering portion 41 connected to the mounting portion 33, a conductive portion 42 connected to a lower end of the upper soldering portion 41, and a lower soldering portion 43 connected to a lower end of the conductive portion 42, wherein the mounting portion 33 is soldered to the upper soldering portion 41, and the lower soldering portion 43 is soldered to the circuit board.
Preferably, in order to improve the heat dissipation efficiency of the chip diode, heat conduction plates 5 are further arranged at the upper end and the lower end of the inner side of the plastic package body 1, and a plurality of heat conduction grooves 12 are formed in the upper end face and the lower end face of the plastic package body 1.
Preferably, in order to increase the hardness of the left and right end faces of the plastic package 1 and prevent the plastic package 1 from being damaged when the extension portion 11 is removed, the end faces of the plastic package 1 close to the extension portion 11 are provided with the ceramic plating layers 6.
The above embodiments only represent one embodiment of the present invention, and the description thereof is more specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (5)

1. The utility model provides a long-life paster diode structure, includes the paster diode, its characterized in that, the paster diode includes plastic packaging body (1), cladding and is in inside chip (2) of plastic packaging body (1), connect respectively two electrode slice (3) at both ends about chip (2), both ends all are equipped with extension (11) about plastic packaging body (1), electrode slice (3) include with contact site (31), the connection that chip (2) are connected are in kink (32), the connection of contact site (31) one end are in installation department (33) of kink (32) one end, wear out installation department (33) the extension (11) outside, installation department (33) lower extreme is connected with conducting strip (4).
2. The long-life patch diode structure according to claim 1, wherein the conductive strip (4) includes an upper soldering portion (41) connected to the mounting portion (33), a conductive portion (42) connected to a lower end of the upper soldering portion (41), and a lower soldering portion (43) connected to a lower end of the conductive portion (42).
3. The long-life patch diode structure according to claim 2, wherein the mounting portion (33) is welded to the upper welding portion (41).
4. The long-life chip diode structure as claimed in claim 1, wherein the plastic package (1) further has heat-conducting plates (5) at the upper and lower inner ends, and the plastic package (1) has heat-conducting grooves (12) at the upper and lower end surfaces.
5. The long-life chip diode structure as claimed in claim 1, wherein the end face of the plastic package (1) close to the extension portion (11) is provided with a ceramic coating (6).
CN201922380520.0U 2019-12-26 2019-12-26 Long-life paster diode structure Active CN210956687U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201922380520.0U CN210956687U (en) 2019-12-26 2019-12-26 Long-life paster diode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201922380520.0U CN210956687U (en) 2019-12-26 2019-12-26 Long-life paster diode structure

Publications (1)

Publication Number Publication Date
CN210956687U true CN210956687U (en) 2020-07-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201922380520.0U Active CN210956687U (en) 2019-12-26 2019-12-26 Long-life paster diode structure

Country Status (1)

Country Link
CN (1) CN210956687U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112839437A (en) * 2020-12-31 2021-05-25 广州金升阳科技有限公司 Double-sided plastic package power supply product

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112839437A (en) * 2020-12-31 2021-05-25 广州金升阳科技有限公司 Double-sided plastic package power supply product
CN112839437B (en) * 2020-12-31 2022-04-15 广州金升阳科技有限公司 Double-sided plastic package power supply product

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Address after: Room 103, building 1, No.76, Baiye Road, Liaobu Town, Dongguan City, Guangdong Province 523430

Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd.

Address before: Room 103, building 1, No.76, Baiye Road, Liaobu Town, Dongguan City, Guangdong Province 523430

Patentee before: Zhongzhi Semiconductor Technology (Dongguan) Co.,Ltd.

CP01 Change in the name or title of a patent holder