CN210467817U - Stable in structure's paster diode - Google Patents
Stable in structure's paster diode Download PDFInfo
- Publication number
- CN210467817U CN210467817U CN201921859244.XU CN201921859244U CN210467817U CN 210467817 U CN210467817 U CN 210467817U CN 201921859244 U CN201921859244 U CN 201921859244U CN 210467817 U CN210467817 U CN 210467817U
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- CN
- China
- Prior art keywords
- diode
- welding
- diode chip
- terminal
- stable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003466 welding Methods 0.000 claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims description 3
- 238000005253 cladding Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a stable in structure's paster diode, including diode chip and cladding the insulation package body of diode chip, diode chip upside both ends all are equipped with and help the welding plate, help the welding plate upper end welding to have the terminal, the terminal includes the weld part, connects the arc portion of weld part downside, connection are in the contact site of arc portion downside, the weld part lean on to arc portion one end still is equipped with the spacing groove, help and weld and be connected with the stopper on the plate, the stopper is located the spacing inslot. The utility model discloses a paster diode, stable in structure, long service life.
Description
Technical Field
The utility model relates to a diode technical field, concretely relates to stable in structure's paster diode.
Background
The diode is also called a crystal diode, and is called a diode for short. Among electronic components, a device having two electrodes allows current to flow only in a single direction, and many applications use the rectifying function thereof. The most common function of a diode is to allow current to pass in only one direction, known as forward bias, and to block in the reverse direction, known as reverse bias. Thus, the diode can be thought of as an electronic version of the check valve. A part of the semiconductor silicon or germanium is doped with a trace of trivalent element boron to form a P type semiconductor, and the other part of the semiconductor silicon or germanium is doped with a trace of pentavalent element phosphorus to form an N type semiconductor. A PN junction is formed at the junction of the P-type and N-type semiconductors. A PN junction is a diode, a lead wire of a P area is called an anode, and a lead wire of an N area is called a cathode. In the diode in the prior art, the longer the service life of the plastic package shell is, the terminal is easy to fall off due to aging of materials in the later period, and the stability is poor.
SUMMERY OF THE UTILITY MODEL
To above problem, the utility model provides a stable in structure's paster diode, stable in structure, long service life.
In order to achieve the above object, the present invention provides the following technical solutions:
the utility model provides a stable in structure's paster diode, includes diode chip and cladding the insulation package of diode chip, diode chip upside both ends all are equipped with helps welds the board, help to weld the board upper end welding and have the terminal, the terminal includes the welding part, connects the arc portion of welding part downside, connect the contact site of arc portion downside, the welding part lean on to arc portion one end still is equipped with the spacing groove, help to weld and be connected with the stopper on the board, the stopper is located the spacing inslot.
Specifically, eight angles of the inner side of the insulating packaging body are provided with anti-deformation supports, and each anti-deformation support is composed of three copper sheets which are perpendicular to each other.
Specifically, both end surfaces of the insulating package body on the side close to the terminal are rough surfaces.
Specifically, four sides of the insulating packaging body are provided with a plurality of heat dissipation protruding strips.
Specifically, the cross section of the heat dissipation convex strip is of a circular arc structure.
The utility model has the advantages that:
firstly, the patch diode of the utility model adds a limit block on the welding-assistant plate, and the limit function of the limit block can prevent the terminal from falling off, thereby improving the structural stability of the diode and prolonging the service life;
secondly, deformation prevention supports formed by three mutually perpendicular copper sheets are arranged at eight corners of the inner side of the insulating packaging body, so that the diode is prevented from deforming, and the structural stability of the diode is further improved;
and thirdly, a plurality of heat dissipation convex strips are arranged on four side surfaces of the insulating packaging body, and rough surfaces are manufactured on the other two end surfaces, so that the surface area of the diode can be increased, and the heat dissipation efficiency of the diode is improved.
Drawings
Fig. 1 is a schematic structural diagram of a stable structure patch diode of the present invention.
Fig. 2 is a cross-sectional view taken along the plane a-a in fig. 1.
Fig. 3 is a schematic structural view of the middle diode chip, the soldering assistant plate, and the terminal of the present invention.
Fig. 4 is an exploded view of the middle diode chip, the soldering assistant plate and the terminal of the present invention.
Fig. 5 is a schematic structural view of the middle anti-deformation bracket of the present invention.
The reference signs are: the diode chip comprises a diode chip 1, an insulating package 2, a soldering assistant plate 3, a limiting block 31, a terminal 4, a welding part 41, an arc-shaped part 42, a contact part 43, a limiting groove 411, an anti-deformation support 5 and a heat dissipation convex strip 6.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings, but the present invention is not limited thereto.
As shown in FIGS. 1 to 5:
the utility model provides a stable in structure's paster diode, including diode chip 1, and the insulating packaging body 2 of cladding diode chip 1, 1 upside both ends of diode chip all are equipped with and help welding plate 3, help welding plate 3 upper end welding have terminal 4, terminal 4 includes welding part 41, connect the arc portion 42 of welding part 41 downside, connect the contact site 43 of arc portion 42 downside, welding part 41 leans on still to be equipped with spacing groove 411 to arc portion 42 one end, help and be connected with stopper 31 on welding plate 3, stopper 31 is located spacing groove 411, utilize stopper 31's limiting displacement, can prevent that terminal 4 from droing, the structural stability of diode has been improved, service life has been prolonged.
Preferably, the eight corners of the inner side of the insulating packaging body 2 are provided with the anti-deformation support 5, and the anti-deformation support 5 is composed of three copper sheets perpendicular to each other, so that the diode is prevented from being deformed, and the structural stability of the diode is further improved.
Preferably, two end faces of the insulating package 2 close to one side of the terminal 4 are rough faces, and four side faces of the insulating package 2 are provided with a plurality of heat dissipation protruding strips 6, so that the surface area of the diode can be increased, and the heat dissipation efficiency of the diode is improved.
Preferably, in order to further increase the surface area of the four sides of the insulating package 2, the cross section of the heat dissipation ribs 6 has a circular arc structure.
The above examples only represent 1 embodiment of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (5)
1. The paster diode is stable in structure and is characterized by comprising a diode chip (1) and an insulating packaging body (2) wrapping the diode chip (1), wherein welding-assisting plates (3) are arranged at two ends of the upper side of the diode chip (1), a terminal (4) is welded at the upper end of each welding-assisting plate (3), each terminal (4) comprises a welding portion (41), an arc-shaped portion (42) connected to the lower side of the welding portion (41) and a contact portion (43) connected to the lower side of the arc-shaped portion (42), a limiting groove (411) is further formed in one end, close to the welding portion (42), of each welding-assisting plate (3), a limiting block (31) is connected to each welding-assisting plate, and each limiting block (31) is located in each limiting groove (411).
2. A structurally stable patch diode according to claim 1, wherein the eight corners of the inside of the insulating package (2) are each provided with a deformation prevention bracket (5), and the deformation prevention brackets (5) are formed by three mutually perpendicular copper sheets.
3. A structurally stable patch diode according to claim 1, wherein both end faces of the insulating package (2) on the side facing the terminals (4) are roughened.
4. A structurally stable patch diode according to claim 1, wherein said insulating package (2) is provided with a plurality of heat dissipating ribs (6) on each of its four sides.
5. A structurally stable patch diode according to claim 4, wherein said ribs (6) have a circular arc-shaped cross-section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921859244.XU CN210467817U (en) | 2019-10-31 | 2019-10-31 | Stable in structure's paster diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921859244.XU CN210467817U (en) | 2019-10-31 | 2019-10-31 | Stable in structure's paster diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210467817U true CN210467817U (en) | 2020-05-05 |
Family
ID=70436216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921859244.XU Active CN210467817U (en) | 2019-10-31 | 2019-10-31 | Stable in structure's paster diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210467817U (en) |
-
2019
- 2019-10-31 CN CN201921859244.XU patent/CN210467817U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231122 Address after: 523430 Building 1 and 2, No. 70, Liaobu Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd. Address before: No. 13 Baiye Avenue, Shangtun Industrial Zone, Liaobu Town, Dongguan City, Guangdong Province, 523430 Patentee before: Mutual Creation (Dongguan) Electronic Technology Co.,Ltd. |