CN114465085A - Integrated packaged semiconductor laser and manufacturing method thereof - Google Patents
Integrated packaged semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN114465085A CN114465085A CN202011129762.3A CN202011129762A CN114465085A CN 114465085 A CN114465085 A CN 114465085A CN 202011129762 A CN202011129762 A CN 202011129762A CN 114465085 A CN114465085 A CN 114465085A
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- Prior art keywords
- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to an integrated packaged semiconductor laser and a manufacturing method thereof, wherein the integrated packaged semiconductor laser comprises a laser chip and a laser heat sink, a laser cathode lead area and a laser anode lead area are arranged on the upper surface of the laser heat sink, and an isolation groove is arranged between the laser cathode lead area and the laser anode lead area; a solder cathode area is arranged on the upper side of the laser cathode lead area, and a laser cathode is arranged on the upper side of the solder cathode area; a solder positive area is arranged on the upper side of the laser positive lead area, and a laser positive electrode is arranged on the upper side of the solder positive area; the laser chip is connected to the upper surfaces of the laser cathode and the laser anode. The invention directly connects the positive and negative electrodes of the laser chip with the positive and negative electrodes of the heat sink through the solder, thereby omitting the step of wire bonding, avoiding the problems caused by the wire bonding process, avoiding the limitation of the size of the bonding pad and greatly reducing the size.
Description
Technical Field
The invention relates to an integrated packaged semiconductor laser and a manufacturing method thereof, belonging to the technical field of semiconductor lasers.
Background
The current semiconductor laser packaging technology is a process of bonding and packaging an anode or a cathode or a certain part of a laser chip and a heat sink together by using a patch mode and then electrically connecting the laser chip and the heat sink by using a welding wire mode. At present, In solder or AuSn solder is generally adopted to weld the chip and the heat sink. As shown in fig. 1, although this structure is a mature structure commonly used at present, if the bonding is poor, the gold wire is easy to fall off and open the circuit due to the wire bonding process. In addition, if the number of the bonding wires is too large, the chip is easy to damage due to poor bonding wire process parameters, and meanwhile, the structure is large in size and not beneficial to integrated packaging. In addition, in the present situation of rapid development of information communication, especially rapid development of optical fiber communication, the requirement for high-speed modulation of a laser is also increasing, and the structure is not easy to realize high-speed modulation.
Through retrieval, chinese patent document CN203205700U discloses a high-power semiconductor laser with an integrated package over-current protection device, which includes a heat sink, a semiconductor laser chip packaged on the heat sink, and an over-current protection device; one surface of the semiconductor laser chip is attached to the surface of the heat sink by adopting solder, and the other surface of the semiconductor laser chip is connected with the overcurrent protection device and the power supply in series through metal wires. This technical scheme adopts the simple and easy overcurrent protection device integrated in encapsulation module to make semiconductor laser, and effectual reduction current overloads the damage to semiconductor laser, and its overall structure is simple moreover, easily realizes, and is with low costs, and it is convenient to change, has very good repeatability, can be fit for batch production and satisfy the market demand, is applicable to the overcurrent protection to the chip under the low-cost semiconductor laser application condition.
However, the structure is still not substantially changed, and therefore, in order to optimize the defects of the semiconductor laser package, creative improvement on the existing laser package structure is needed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an integrated packaged semiconductor laser structure, which cancels bonding wire connection, realizes integrated packaging, is also favorable for reducing the volume and promoting the application of a laser.
The invention also provides a manufacturing method of the integrated packaged semiconductor laser.
The technical scheme of the invention is as follows:
an integrally packaged semiconductor laser comprises a laser chip and a laser heat sink, wherein a laser cathode lead area and a laser anode lead area are arranged on the upper surface of the laser heat sink, and an isolation groove is arranged between the laser cathode lead area and the laser anode lead area;
a solder cathode area is arranged on the upper side of the laser cathode lead area, and a laser cathode is arranged on the upper side of the solder cathode area; a solder positive area is arranged on the upper side of the laser positive lead area, and a laser positive electrode is arranged on the upper side of the solder positive area;
the laser chip is connected to the upper surfaces of the laser cathode and the laser anode.
Preferably, the laser is heat-deposited into an AlN ceramic wafer or a SiC crystal wafer.
Preferably, the thickness of the solder negative electrode area and the thickness of the solder positive electrode area are both 3-10 microns.
Preferably, the material of the solder negative electrode region and the solder positive electrode region is In or AuSn.
Preferably, the solder negative electrode region and the solder positive electrode region are in a square column shape, a rectangular column shape or a cylindrical shape.
Preferably, the laser cathode lead area and the laser anode lead area are part of a laser heat sink, and gold plating layers are arranged on the surfaces of the laser cathode lead area and the laser anode lead area.
Preferably, the laser chip is a GaN material series blue-green laser or a GaAs material series or InP material series semiconductor laser.
A method for manufacturing an integrated packaged semiconductor laser comprises the following steps:
1) preparing a laser chip, namely evaporating TiPtAu or TiAu on a P-type ohmic contact layer to form a laser anode, removing part of P-surface metal and a chip epitaxial layer through a photoetching process and a corrosion process, exposing the P-surface metal and the chip epitaxial layer to an N-type limiting layer, evaporating a GeNiAu material on an exposed area to form a laser cathode, enabling the laser anode and the laser cathode to be on the same surface of the chip, isolating the P-type electrode and the N-type electrode of the laser chip by an isolating groove, and protecting and isolating the side wall by adopting insulating SiO2 or SiN;
2) preparing an AlN or SiC heat sink sheet, plating gold on the surface of the heat sink sheet, and evaporating In or AuSn solder In a partial region of the heat sink, wherein the thickness of the solder is 3-10 microns;
3) manufacturing the solder into a rectangular column shape, a square column shape or a cylindrical shape on the heat sink sheet with the solder by a photoetching process and an etching process;
4) manufacturing an isolation groove in the solder area by photoetching and corrosion, dividing the solder area into two parts serving as a solder cathode area and a solder anode area of the laser, and penetrating the isolation groove to the heat sink AlN layer;
5) respectively corresponding the cathode and the anode of the laser chip to the cathode region and the anode region of the solder on the surface of the heat sink sheet;
6) and (4) putting the fixed laser chip and the laser heat sink sheet into a sintering furnace for consolidating and refining to finish the laser in an integrated packaging form.
The invention has the technical characteristics and beneficial effects that:
the laser chip and the heat sink are directly connected by the solder, so that the bonding wire step is omitted, the problems caused by the bonding wire process are avoided, the following obvious advantages can be brought, the laser chip has excellent electrical property and thermal property, the I/O number can be very high under the condition that the solder of the heat sink adopts the optimized solder ball spacing, the bonding wire process is avoided, the limitation of the size of a bonding pad is avoided, and the size can be greatly reduced.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser in the prior art;
in fig. 1: 1. a laser chip; 2. laser heat sinking; 3. a laser cathode; 4. a laser anode; 5. with a solder anode region; 6. a solder negative region; 7. a laser negative lead region; 8. laser anode lead area.
FIG. 2 is a schematic diagram of a semiconductor laser according to the present invention;
in fig. 2: 1-laser chip, 2-laser heat sink, 3-laser cathode, 4-laser anode, 5-solder anode region, 6-solder cathode region, 7-laser cathode lead region, and 8-laser anode lead region.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
Example 1:
as shown in fig. 2, the present embodiment provides an integrated packaged semiconductor laser, including a laser chip 1 and a laser heat sink 2, a laser negative lead region 7 and a laser positive lead region 8 are arranged on the upper surface of the laser heat sink 2, and an isolation groove is disposed between the laser negative lead region 7 and the laser positive lead region 8;
a solder cathode region 6 is arranged on the upper side of the laser cathode lead region 7, and a laser cathode 3 is arranged on the upper side of the solder cathode region 6; a solder positive area 5 is arranged on the upper side of the laser positive lead area 8, and a laser positive electrode 4 is arranged on the upper side of the solder positive area 5;
the laser chip 1 is connected to the upper surfaces of the laser cathode 3 and the laser anode 4.
Specifically, the laser heat sink 2 is an AlN ceramic chip, the heat sink 2 is a rectangular parallelepiped, the laser negative lead area 7 and the laser positive lead area 8 on the upper surface of the heat sink 2 are part of the laser heat sink 2, and gold plating is provided on the surfaces of the laser negative lead area 7 and the laser positive lead area 8.
The upper surfaces of the laser negative lead area 7 and the laser positive lead area 8 are respectively provided with a solder negative area 6 and a solder positive area 5 which are formed by In solder, the thicknesses of the solder negative area 6 and the solder positive area 5 are 3 microns, and the solder negative area 6 and the solder positive area 5 are rectangular columns.
The upper surface of the solder cathode region 6 is the laser cathode 3, and the upper surface of the solder anode region 5 is the laser anode 4. The laser chip 1 is a GaN material series blue-green laser, and the anode and the cathode of the laser chip 1 are directly connected with the anode and the cathode of the laser.
The P-type and N-type electrodes of the laser chip 1 are isolated by an isolation groove, and the isolation groove penetrates through the heat sink AlN layer to ensure the isolation effect.
Example 2:
an integrally packaged semiconductor laser, having the structure as described in embodiment 1, except that: the laser heat sink 2 is a SiC crystal plate.
The material of the solder negative electrode area 6 and the solder positive electrode area 5 is AuSn, the thickness of the solder negative electrode area 6 and the solder positive electrode area 5 are both 10 microns, and the solder negative electrode area 6 and the solder positive electrode area 5 are in a square column shape.
The laser chip 1 is a GaAs material series semiconductor laser.
Example 3:
an integrally packaged semiconductor laser, having the structure as described in embodiment 1, except that: the solder negative electrode region 6 and the solder positive electrode region 5 are cylindrical.
The laser chip 1 is an InP material series semiconductor laser.
Example 4:
the method of fabricating an integrally packaged semiconductor laser as described in embodiment 1, comprising the steps of:
1) preparing a laser chip, wherein the laser chip consists of a substrate, an N-type limiting layer, a lower waveguide layer, an active region, an upper waveguide layer, a P-type limiting layer and a P-type ohmic contact layer from bottom to top; firstly, evaporating TiPtAu or TiAu on a P-type ohmic contact layer to form a laser anode, then removing part of P-surface metal and a chip epitaxial layer through a photoetching process and a corrosion process to expose to an N-type limiting layer, and then evaporating a GeNiAu material on an exposed area to form a laser cathode, so that the laser anode and the laser cathode are on the same surface of the chip, P-type and N-type electrodes of the laser chip are isolated by an isolation groove, and the side wall is protected and isolated by insulating SiO2 or SiN;
2) preparing an AlN or SiC heat sink sheet, plating gold on the surface of the heat sink sheet, and then evaporating In or AuSn solder In the area of the heat sink part, wherein the thickness of the solder is 3-10 microns;
3) manufacturing the solder into a rectangular column shape, a square column shape or a cylindrical shape on the heat sink sheet with the solder by a photoetching process and an etching process;
4) manufacturing an isolation groove in a solder area by photoetching and corrosion, dividing the solder area into two parts serving as a solder cathode area and a solder anode area of the laser, and enabling the isolation groove to penetrate through the heat sink AlN layer to ensure the isolation effect;
5) respectively corresponding the cathode and the anode of the laser chip to the cathode region and the anode region of the solder on the surface of the heat sink sheet;
6) and (4) putting the fixed laser chip and the laser heat sink sheet into a sintering furnace for consolidating and refining to finish the laser in an integrated packaging form.
The above description is only for the specific embodiments of the present invention, and the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the protection scope of the present invention.
Claims (8)
1. An integrally packaged semiconductor laser is characterized by comprising a laser chip and a laser heat sink, wherein a laser cathode lead area and a laser anode lead area are arranged on the upper surface of the laser heat sink, and an isolation groove is arranged between the laser cathode lead area and the laser anode lead area;
a solder cathode area is arranged on the upper side of the laser cathode lead area, and a laser cathode is arranged on the upper side of the solder cathode area; a solder anode area is arranged on the upper side of the laser anode lead area, and a laser anode is arranged on the upper side of the solder anode area;
the laser chip is connected to the upper surfaces of the laser cathode and the laser anode.
2. An integrally packaged semiconductor laser as in claim 1 wherein the laser is heat-deposited as an AlN ceramic wafer or a SiC crystal wafer.
3. An integrally packaged semiconductor laser as claimed in claim 1 wherein the solder negative and positive electrode regions each have a thickness of 3 to 10 microns.
4. An integrally packaged semiconductor laser as claimed In claim 1 wherein the material of the solder negative and positive regions is In or AuSn.
5. An integrally packaged semiconductor laser as claimed in claim 1 wherein said solder negative and solder positive regions are of a square, rectangular or cylindrical shape.
6. An integrally packaged semiconductor laser as in claim 1 wherein the laser negative lead area and the laser positive lead area are part of a laser heat sink and the laser negative lead area and the laser positive lead area have gold plating on their surfaces.
7. An integrally packaged semiconductor laser as in claim 1 wherein the laser chip is a GaN material series blue-green laser or a GaAs material series or InP material series semiconductor laser.
8. A method of fabricating an integrally packaged semiconductor laser as claimed in any of claims 1 to 7 comprising the steps of:
1) preparing a laser chip, namely evaporating TiPtAu or TiAu on a P-type ohmic contact layer to form a laser anode, removing part of P-surface metal and a chip epitaxial layer through a photoetching process and a corrosion process, exposing the P-surface metal and the chip epitaxial layer to an N-type limiting layer, evaporating a GeNiAu material on an exposed area to form a laser cathode, enabling the laser anode and the laser cathode to be on the same surface of the chip, isolating the P-type electrode and the N-type electrode of the laser chip by an isolating groove, and protecting and isolating the side wall by adopting insulating SiO2 or SiN;
2) preparing an AlN or SiC heat sink sheet, plating gold on the surface of the heat sink sheet, and evaporating In or AuSn solder In a partial region of the heat sink, wherein the thickness of the solder is 3-10 microns;
3) manufacturing the solder into a rectangular column shape, a square column shape or a cylindrical shape on the heat sink sheet with the solder by a photoetching process and an etching process;
4) manufacturing an isolation groove in the solder area by photoetching and corrosion, dividing the solder area into two parts serving as a solder cathode area and a solder anode area of the laser, and penetrating the isolation groove to the heat sink AlN layer;
5) respectively corresponding the cathode and the anode of the laser chip to the cathode region and the anode region of the solder on the surface of the heat sink sheet;
6) and (4) putting the fixed laser chip and the laser heat sink sheet into a sintering furnace for consolidating and refining to finish the laser in an integrated packaging form.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011129762.3A CN114465085A (en) | 2020-10-21 | 2020-10-21 | Integrated packaged semiconductor laser and manufacturing method thereof |
| PCT/CN2020/129949 WO2022082916A1 (en) | 2020-10-21 | 2020-11-19 | Integrated packaged semiconductor laser and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011129762.3A CN114465085A (en) | 2020-10-21 | 2020-10-21 | Integrated packaged semiconductor laser and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114465085A true CN114465085A (en) | 2022-05-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011129762.3A Pending CN114465085A (en) | 2020-10-21 | 2020-10-21 | Integrated packaged semiconductor laser and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114465085A (en) |
| WO (1) | WO2022082916A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117374721A (en) * | 2023-10-31 | 2024-01-09 | 江苏博睿光电股份有限公司 | Semiconductor laser transitional heat sink structure, preparation method thereof and semiconductor laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116598884A (en) * | 2023-07-14 | 2023-08-15 | 中国科学院半导体研究所 | Semiconductor laser and method for manufacturing the same |
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| Publication number | Publication date |
|---|---|
| WO2022082916A1 (en) | 2022-04-28 |
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