CN206059901U - A kind of high-power semiconductor laser - Google Patents
A kind of high-power semiconductor laser Download PDFInfo
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- CN206059901U CN206059901U CN201620811844.9U CN201620811844U CN206059901U CN 206059901 U CN206059901 U CN 206059901U CN 201620811844 U CN201620811844 U CN 201620811844U CN 206059901 U CN206059901 U CN 206059901U
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- contiguous block
- heat sink
- negative pole
- pole contiguous
- chip
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Abstract
This utility model provides a kind of high-power semiconductor laser, including：Basic heat sink, positive pole contiguous block, negative pole contiguous block and chip of laser group；Wherein, the positive pole contiguous block, negative pole contiguous block and chip of laser group by thermally conductive insulating layer be bonded to the basis it is heat sink on, two end faces of chip of laser stacking direction positive terminal and negative pole end respectively as chip of laser group；Groove structure is set on the positive pole contiguous block and the negative pole contiguous block respectively, the positive pole contiguous block and negative pole contiguous block are connected with the positive pole and negative pole of the chip of laser group by the groove structure, Jing electrode films and negative electrode plate respectively.Based on this utility model provide high-power semiconductor laser, can be effectively prevented from chip of laser group and it is heat sink between short circuit, improve product reliability and production efficiency.
Description
Technical field
This utility model is related to field of semiconductor lasers, more particularly to a kind of high-power semiconductor laser.
Background technology
In prior art, the electrode block and chip of laser group of semiconductor laser when with heat sink bonding, level
Dielectric strength on direction and vertical direction is difficult to while ensureing, the risk of electrode delamination is very high.Also, chip of laser group
Electrode and it is heat sink between apart from very little, easily lead in actual applications the electrode of chip of laser group and it is heat sink between it is short-circuit.
The content of the invention
In view of this, this utility model provides a kind of high-power semiconductor laser, can be effectively prevented from laser instrument core
Piece group and it is heat sink between short circuit, with higher reliability.
The technical solution of the utility model is as follows：
This utility model provides a kind of high-power semiconductor laser, including：Basic heat sink, positive pole contiguous block, negative pole connect
Connect block and chip of laser group；Wherein, the positive pole contiguous block, negative pole contiguous block and chip of laser group pass through heat conduction
Insulating barrier be bonded to the basis it is heat sink on, two end faces of chip of laser stacking direction are respectively as chip of laser group
Positive terminal and negative pole end；Groove structure is set on the positive pole contiguous block and the negative pole contiguous block respectively, and the positive pole connects
Connect block and negative pole contiguous block passes through the groove structure, Jing electrode films and negative electrode plate and the chip of laser group respectively
Positive pole and negative pole connection.
In such scheme, the basis is heat sink to be located at respectively for convex structure, the positive pole contiguous block and negative pole contiguous block
The both wings that the convex basis is heat sink, the chip of laser group are located on the boss at the heat sink middle part in convex basis.
In such scheme, the groove structure on the positive pole contiguous block is located at the positive pole contiguous block near the basal heat
One end of heavy boss；Groove structure on the negative pole contiguous block is located at the negative pole contiguous block near the basic heat sink boss
One end.
In such scheme, the groove structure is in its cell wall at the basic heat sink boss highly higher than another
Side.
In such scheme, the positive pole contiguous block, the electrode film, the thermally conductive insulating layer and the basis are heat sink it
Between form cavity structure；Shape between the negative pole contiguous block, the negative electrode plate, the thermally conductive insulating layer and the basis are heat sink
Into cavity structure.
In such scheme, the shape of the groove structure includes：U-shaped, triangle, tetragon, polygon.
In such scheme, the material of the thermally conductive insulating layer is：Beryllium oxide, and/or aluminium oxide, and/or aluminium nitride and/
Or diamond.
In such scheme, the material that the basis is heat sink is：For copper or copper tungsten or copper diamond composite.
The high-power semiconductor laser provided by this utility model, can be effectively prevented from chip of laser group and heat
Short circuit between heavy, with higher reliability.On the other hand, when semiconductor laser encapsulation is carried out, can be by laser instrument core
Piece group as module one, using basic heat sink, positive pole contiguous block and negative pole contiguous block as module two, in advance respectively to above-mentioned module
One and module two carry out individual packages, and have certain stock, subsequently electrode slice can be inserted directly into into institute according to real needs
State in the cutting of electrode contiguous block of module two, then carry out final step bonding, so by whole encapsulation process modularity, not only
The yield of product is improve, and substantially increases production efficiency, led using the encapsulation of single current line type in solving prior art
The problem of the low production efficiency of cause.
Description of the drawings
Structural representations of the Fig. 1 for this utility model high-power semiconductor laser；
Close-up schematic views of the Fig. 2 for this utility model anelectrode block groove structure.
Drawing reference numeral explanation：1 is chip of laser group, and 2 is anelectrode block, and 3 is negative electrode block, and 4 is electrode film, and 5 are
Negative electrode plate, heat sink based on 6,7 is thermally conductive insulating layer, and 8 is cavity, and 9 is the cell wall of groove structure, and 10 is chip of laser group
Positive terminal, 11 is chip of laser group negative pole end.
Specific embodiment
This utility model provides a kind of high-power semiconductor laser, knots of the Fig. 1 for this utility model semiconductor laser
Composition, as shown in figure 1, the high-power semiconductor laser includes：Basis is heat sink 6, positive pole contiguous block 2, negative pole contiguous block 3 with
And chip of laser group 1.As can be seen from Figure, two end faces using the chip of laser stacking direction are as laser
The positive terminal 10 and negative pole end 11 of device chipset, by thermal insulation layer 7 by the positive pole contiguous block 2, negative pole contiguous block 3 and
Chip of laser group 1 is bonded on the basis heat sink 6；Wherein, the material of thermal insulation layer 7 can be including but not limited to：Oxygen
Change beryllium, and/or aluminium oxide, and/or aluminium nitride, and/or diamond；The basis heat sink 6 is convex structure, and the basis is heat sink
Material can be：For copper or copper tungsten or copper diamond composite；The positive pole contiguous block and negative pole contiguous block difference position
In the both wings that convex basis is heat sink, the chip of laser group is located on the boss at the heat sink middle part in convex basis.
Further, groove structure is set on above-mentioned positive pole contiguous block 2 and above-mentioned negative pole contiguous block 3 respectively, it is described just
Groove structure on the contiguous block of pole is located at the positive pole contiguous block near one end of heat sink 6 boss in the basis, and the negative pole connects
Connect the groove structure on block negative pole contiguous block is located near one end of heat sink 6 boss in the basis.Due to the chip of laser
Group is on the boss in the middle part of the basis heat sink 6, therefore the positive pole contiguous block and negative pole contiguous block pass through the cutting respectively
Structure, Jing electrode films and negative electrode plate can be connected with the positive pole of chip of laser group 1 and negative pole；So by above-mentioned cutting
Structure, electrode film and negative electrode plate, can successfully by the positive terminal 10 and negative pole end 11 of chip of laser group 1 respectively with just
Pole contiguous block 2 and negative pole contiguous block 3 are coupled together, and are eliminated L-type electrode connecting piece in traditional structure, are reduced cost.
It should be noted that the shape of the groove structure in this utility model can be including but not limited to：U-shaped, triangle,
Tetragon, polygon；This utility model is illustrated by taking U-shaped groove structure as an example, but this is not constituted to of the present utility model
Limit.
In addition, the groove structure in this utility model is highly higher than another in its cell wall at basic heat sink boss
Side.Specifically, by taking the groove structure on positive pole contiguous block as an example, as shown in Fig. 2 by Fig. 2, it is apparent that groove structure
In its 9 height of cell wall at basic heat sink boss apparently higher than opposite side, the cell wall 9 of so higher side can successfully by
The electrode film 4 is raised so that the positive pole contiguous block 2, the electrode film 4, the thermally conductive insulating layer 7 and the basis
Cavity structure 8 is formed between heat sink 6, the cavity structure 8 causes the side between positive pole contiguous block 2 and basis heat sink 6 to be formed
Gap, therefore no longer need to arrange insulating barrier；When so, in the cutting that electrode film inserts positive pole contiguous block, due to cavity
The presence of structure and electrode film are elevated pieces of reason, efficiently avoid chip of laser group positive pole and basis it is heat sink between
Short circuit.
Similar, cell wall 9 height of the groove structure on negative pole contiguous block 3 at which at heat sink 6 boss in basis is substantially
Higher than opposite side, the negative electrode plate 5 successfully can be raised by the cell wall 9 of so higher side so that the negative pole contiguous block
3rd, cavity structure 8 is formed between the negative electrode plate 5, the thermally conductive insulating layer 7 and the basis heat sink 6, the cavity structure 8 makes
The side obtained between negative pole contiguous block 3 and basis heat sink 6 forms gap, therefore no longer needs to arrange insulating barrier；So, negative
Electrode slice insertion negative pole contiguous block cutting in when, due to cavity structure presence and negative electrode plate be elevated pieces of reason, have
Effect ground avoid chip of laser group negative pole and it is basic it is heat sink between short circuit.
In such scheme, the setting of the groove structure so that when semiconductor laser encapsulation is carried out can be by laser
Device chipset as module one, using basic heat sink, positive pole contiguous block and negative pole contiguous block as module two, in advance respectively to above-mentioned
Module one and module two carry out individual packages, and have certain stock, subsequently can directly insert electrode slice according to real needs
Enter in the cutting of electrode contiguous block of the module two, then carry out final step bonding, so by whole encapsulation process modularity,
The yield of product is not only increased, and substantially increases production efficiency, sealed using single current line type in solving prior art
The problem of low production efficiency caused by dress.
The above, preferred embodiment only of the present utility model is not intended to limit protection of the present utility model
Scope.For a person skilled in the art, this utility model can have various modifications and variations.It is all of the present utility model
Any modification, equivalent substitution and improvements for being done etc. within spirit and principle, should be included in protection domain of the present utility model it
It is interior.
Claims (8)
1. a kind of high-power semiconductor laser, including：Basic heat sink, positive pole contiguous block, negative pole contiguous block and laser instrument core
Piece group；Wherein, the positive pole contiguous block, negative pole contiguous block and chip of laser group are bonded to described by thermally conductive insulating layer
On basis is heat sink, two end faces of chip of laser stacking direction positive terminal and negative pole end respectively as chip of laser group；
Characterized in that,
Groove structure is set on the positive pole contiguous block and the negative pole contiguous block respectively, the positive pole contiguous block and negative pole connect
Connect block to connect with the positive pole and negative pole of the chip of laser group by the groove structure, Jing electrode films and negative electrode plate respectively
Connect.
2. semiconductor laser according to claim 1, it is characterised in that the basis is heat sink for convex structure, described
Positive pole contiguous block and negative pole contiguous block are located at the heat sink both wings in convex basis respectively, and the chip of laser group is located at described
On the boss at the basic heat sink middle part of convex.
3. semiconductor laser according to claim 2, it is characterised in that the groove structure position on the positive pole contiguous block
In the positive pole contiguous block near one end of the basic heat sink boss；
Groove structure on the negative pole contiguous block is located at the negative pole contiguous block near one end of the basic heat sink boss.
4. semiconductor laser according to claim 3, it is characterised in that the groove structure is at which near the basis
Cell wall at heat sink boss is highly higher than opposite side.
5. semiconductor laser according to claim 1, it is characterised in that
Cavity structure is formed between the positive pole contiguous block, the electrode film, the thermally conductive insulating layer and the basis are heat sink；
Cavity structure is formed between the negative pole contiguous block, the negative electrode plate, the thermally conductive insulating layer and the basis are heat sink.
6. semiconductor laser according to claim 1, it is characterised in that the shape of the groove structure includes：U-shaped,
Triangle, tetragon, polygon.
7. semiconductor laser according to claim 1, it is characterised in that the material of the thermally conductive insulating layer is：Oxidation
Beryllium or aluminium oxide or aluminium nitride or diamond.
8. semiconductor laser according to claim 1, it is characterised in that the material that the basis is heat sink is：For copper or
Copper tungsten or copper diamond composite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620811844.9U CN206059901U (en) | 2016-07-29 | 2016-07-29 | A kind of high-power semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620811844.9U CN206059901U (en) | 2016-07-29 | 2016-07-29 | A kind of high-power semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206059901U true CN206059901U (en) | 2017-03-29 |
Family
ID=58379579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620811844.9U Active CN206059901U (en) | 2016-07-29 | 2016-07-29 | A kind of high-power semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206059901U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289549A (en) * | 2019-06-20 | 2019-09-27 | 中国科学院半导体研究所 | Semiconductor laser chip, its packaging method and semiconductor laser |
| WO2022082916A1 (en) * | 2020-10-21 | 2022-04-28 | 山东华光光电子股份有限公司 | Integrated packaged semiconductor laser and manufacturing method therefor |
| CN114883909A (en) * | 2022-05-24 | 2022-08-09 | 无锡亮源激光技术有限公司 | Quasi-continuous semiconductor laser array laminated structure and manufacturing method thereof |
-
2016
- 2016-07-29 CN CN201620811844.9U patent/CN206059901U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289549A (en) * | 2019-06-20 | 2019-09-27 | 中国科学院半导体研究所 | Semiconductor laser chip, its packaging method and semiconductor laser |
| CN110289549B (en) * | 2019-06-20 | 2023-09-05 | 中国科学院半导体研究所 | Semiconductor laser chip, packaging method thereof and semiconductor laser |
| WO2022082916A1 (en) * | 2020-10-21 | 2022-04-28 | 山东华光光电子股份有限公司 | Integrated packaged semiconductor laser and manufacturing method therefor |
| CN114883909A (en) * | 2022-05-24 | 2022-08-09 | 无锡亮源激光技术有限公司 | Quasi-continuous semiconductor laser array laminated structure and manufacturing method thereof |
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