CN205901066U - Conduction cooling high power semiconductor laser - Google Patents
Conduction cooling high power semiconductor laser Download PDFInfo
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- CN205901066U CN205901066U CN201620712927.2U CN201620712927U CN205901066U CN 205901066 U CN205901066 U CN 205901066U CN 201620712927 U CN201620712927 U CN 201620712927U CN 205901066 U CN205901066 U CN 205901066U
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- contiguous block
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Abstract
The utility model provides a conduction cooling high power semiconductor laser, including laser chip group, anodal connecting block, negative pole connecting block and T type thermal insulation piece. Laser chip group is formed by a plurality of laser chip and folds a battle array module, its two outer terminal surfaces that pile up the orientation be respectively laser chip group just, the negative pole holds, the medial surface that just, the negative pole connecting block is relative has first boss and second boss respectively, first boss and second boss are the L type, and both are the central symmetry setting, the heat sink of laser instrument is regarded as jointly to first boss and second boss, two terminal surfaces of L type length portion and the vertical stroke of thermal insulation piece paste mutually and weld, L type weak point portion for the orifice plate form as extraction electrode, just, two terminal surfaces playing face and thermal insulation piece transverse part of the nonconvex on the relative medial surface of negative pole connecting block paste mutually and weld, just, the nonconvex on the relative medial surface of negative pole connecting block rise face and laser chip group just, the negative pole end pastes mutually and welds. The utility model discloses simple structure, integrated nature are good.
Description
Technical field
This utility model belongs to semiconductor laser encapsulation field, is related to a kind of conduction cooling high power semiconductor laser
Device.
Background technology
High-power semiconductor laser (hpld) relies on its small volume in recent years, lightweight, electro-optical efficiency is high, performance
The advantages of stable and life-span length, have become as most rising product in semiconductor optoelectronic industry, be widely used in
The fields such as industry, communication, military, medical treatment and direct material process.With the extensive application of semiconductor laser, its heat problem
Always one of focus of concern, heat management has become the critical bottleneck of restriction semiconductor laser performance.Laser instrument
Radiating becomes one of maximum obstruction that restriction semiconductor laser output improves, and is high power semiconductor lasers encapsulation
The problem that technology has to solve.
The Conventional conduction cooling type semiconductor laser (application number pair write in structure shown in Fig. 5 and material as shown in Figure 5
The file answered is not inconsistent, and does not therefore write application number here), it is by multiple semiconductor laser chips and multiple substrate copper tungsten entirety warp
Once it is weldingly fixed on insulating heat-conductive block 4, then this module is welded on heat sink 9 again, draw anelectrode 7 and draw negative electricity
The axial direction in the hole of pole 8 is parallel with the light direction of laser chip group.This structure has the disadvantage that
1. encapsulating structure complexity, poor reliability
This structural elements is more, and complex structure, preparation technology difficulty are big, it is difficult to ensure that according to design in preparation process
Complete to weld, and then reliability and the life-span of product can be reduced.
2. the system integration is poor
Because the axial direction in this structure electrode hole is parallel with the light direction of laser chip group, strip array direction is led to take
Space is bigger, is unfavorable for the system integration of limited space, limits the expansion of its application in light-pumped solid state laser.
Utility model content
The utility model proposes a kind of conduction cooling high power semiconductor laser, to solve answering of existing encapsulating structure
Polygamy, poor reliability, the problem of system integration difference.
The technical solution of the utility model is:
A kind of conduction cooling high power semiconductor laser, it includes laser chip group, positive pole contiguous block, negative pole connection
Block, insulating heat-conductive block；Described laser chip group forms folded array module by multiple laser chips；The chip-stacked direction of folded array module
, respectively as the positive terminal of laser chip group and negative pole end, it is characterized in that for two outer faces
Described insulating heat-conductive block is t type structure；
Described positive pole contiguous block has first boss, and described negative pole contiguous block has second boss；Described first boss and
Second boss is l type, and both are centrosymmetric setting, is located at the positive pole contiguous block inner side relative with negative pole contiguous block respectively
Face；
Described first boss and second boss are heat sink collectively as semiconductor laser；
The l type length portion of described first boss and second boss is affixed with two end faces of insulating heat-conductive block t type structure vertical part
And weld；
The short portion of l type of described first boss and second boss is well plate format as extraction electrode；
Non- crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and insulating heat-conductive block t type structure
Two end faces of transverse part are affixed and weld；
Two of non-crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and laser chip group
Outer face is affixed and welds, and laser chip group is installed and fixes；The installation site of described laser chip group corresponds to described heat sink
Middle part, simultaneously be located at insulating heat-conductive block t type structure transverse part surface.
When high to cooling requirements, using laser chip group and the discontiguous form of insulating heat-conductive block, process is simple；When
When higher to cooling requirements, in the form of laser chip group is contacted with insulating heat-conductive block, but complex process, difficulty are big.
Based on technique scheme, this utility model is also made following optimization further and is limited:
The axial direction of above-mentioned orifice plate is vertical with the light direction of laser chip group.
By the non-projection on the relative inner face of positive pole contiguous block and negative pole contiguous block in the face of laser chip group is adjacent to weldering
Connect fixation, make laser chip group hanging, leave space between the transverse part of laser chip group and insulating heat-conductive block t type structure, with
Eliminate the adverse effect that error is brought, be easy to reality processing.
Above-mentioned insulating heat-conductive block t type structure is integrated part or molectron.
Using multiple above-mentioned conduction cooling high power semiconductor lasers, horizontal array can be assembled into, multiple conduction are cold
But high-power semiconductor laser is arranged successively along crystal bar axis direction, in each conduction cooling high power semiconductor laser
Positive pole contiguous block is vertical with crystal bar axis with the axis of the extraction electrode of negative pole contiguous block.
This utility model has the advantage that
This utility model takes full advantage of positive pole contiguous block and the area of negative pole contiguous block, during matching design is in thereon
The symmetrically arranged two l type convex surfaces of the heart are heat sink to serve as, and are provided with heat conductive insulating block, structure is simple, compact between l type convex surface,
It is easy to process and install fix, reduce complexity and the volume of encapsulating structure, improve heat dispersion simultaneously.As Fig. 7 and Fig. 8
Shown, as can be seen from Figure 7, in the case of same 36w continuous power output, temperature rise of the present utility model is 36.3518-25=
11.3518 DEG C, the temperature rise of conventional package is 37.8136-25=12.8136 DEG C, and this utility model compares conventional package
Temperature rise reduce (12.8136-11.3518)/12.8136=11.4%.
This utility model is arranged along crystal bar axis direction successively using multiple conduction cooling high power semiconductor lasers,
Composition strip horizontal array, with respect to the strip horizontal array of conventional package composition, it is shared by length direction
Space substantially reduces, and therefore the crystalline axis direction in light-pumped solid state laser can place more semiconductor lasers, has more
The good system integration.
Brief description
Fig. 1 is structural representation of the present utility model；
Fig. 2 disassembles schematic diagram for this utility model structure；
Fig. 3 is this utility model laser chip group structural representation；
Fig. 4 is the schematic diagram of the horizontal array using this utility model assembling；
Fig. 5 disassembles schematic diagram for the folded battle array high-power semiconductor laser of Conventional conduction cooling；
Fig. 6 is the schematic diagram of the horizontal array using Conventional conduction cooling folded battle array high-power semiconductor laser assembling；
Fig. 7 continuously exports temperature cloud picture under 36w power for this utility model；
Fig. 8 continuously exports temperature cloud picture under 36w power for the folded battle array high-power semiconductor laser of Conventional conduction cooling；
In figure: 1- positive pole contiguous block；2- laser chip group；3- negative pole contiguous block；4- insulating heat-conductive block；41- insulating heat-conductive
Block t type structure transverse part；42- insulating heat-conductive block t type structure vertical part；5- first boss；6- second boss；7- draws anelectrode；8-
Draw negative electrode；9- is heat sink.
Specific embodiment
As depicted in figs. 1 and 2, conduction cooling high power semiconductor laser provided by the utility model includes laser core
Piece group 2, positive pole contiguous block 1, negative pole contiguous block 3 and insulating heat-conductive block 4.
Laser chip group 2 forms folded array module by multiple laser chips, between each laser chip using copper tungsten material with
Same distance is spaced, and can be assembled into any number of bar bar group structure, to meet the requirement of different capacity, is this as shown in Figure 3
The structural representation of utility model laser chip group；Two outer faces of folded array module (i.e. laser chip group 2) stacking direction are divided
The not positive terminal as laser chip group 2 and negative pole end.
Insulating heat-conductive block 4 is t type structure, can be integrated part and be alternatively molectron.
Positive pole contiguous block 1 has first boss 5, and negative pole contiguous block 3 has second boss 6；First boss 5 and second boss
6 are l type, and both are centrosymmetric setting, are located at positive pole contiguous block 1 medial surface relative with negative pole contiguous block 3 respectively.First
Boss 5 and second boss 6 are heat sink collectively as semiconductor laser.
The l type length portion of first boss 5 and second boss 6 is affixed with two end faces of insulating heat-conductive block t type structure vertical part 42
And weld；
The short portion of l type of the second boss 6 of first boss 5 is well plate format as the extraction electrode (hole on positive pole contiguous block
Plate is to introduce anelectrode, and the orifice plate on negative pole contiguous block is to introduce negative electrode) and the axial direction of orifice plate and laser chip group 2
Light direction is vertical." orifice plate " mentioned here, its " hole " is to emphasize insertion, can be traditional circular hole or outer rim
Locate hole jaggy.
Non- crowning on the relative inner face of positive pole contiguous block 1 and negative pole contiguous block 3 is horizontal with insulating heat-conductive block t type structure
Two end faces in portion 41 are affixed and weld；
Non- crowning on the relative inner face of positive pole contiguous block 1 and negative pole contiguous block 3 is outer with two of laser chip group 2
End face is affixed and welds, and laser chip group 2 is fixedly mounted.The installation site of laser chip group 2 correspond to described heat sink (by
First boss 5 and second boss 6 collectively constitute) middle part, simultaneously be located at insulating heat-conductive block t type structure transverse part 41 surface.
It should be noted that when laser chip group 2 is fixedly mounted, laser chip group 2 can be made hanging, i.e. laser chip group
Leave space between 2 and the transverse part 41 of insulating heat-conductive block t type structure, to eliminate the adverse effect that error is brought, be easy to actual adding
Work.Also laser chip group 2 and the transverse part 41 of insulating heat-conductive block t type structure can be made to contact, to meet higher cooling requirements.
As shown in figure 4, using this utility model multiple conduction cooling high power semiconductor laser composition strip level
Array, multiple conduction cooling high power semiconductor lasers are arranged successively along crystal bar axis direction, each conduction cooling Gao Gong
In rate semiconductor laser, positive pole contiguous block 1 is vertical with crystal bar axis with the axis of the extraction electrode of negative pole contiguous block 3.Relatively
In the strip horizontal array (as shown in Figure 6) of conventional package composition, using the horizontal array of this utility model composition, its
Space shared by length direction substantially reduces.
Claims (5)
1. a kind of conduction cooling high power semiconductor laser, includes laser chip group, positive pole contiguous block, negative pole contiguous block, exhausted
Edge heat-conducting block；Described laser chip group forms folded array module by multiple laser chips；Two of the chip-stacked direction of folded array module
Outer face respectively as laser chip group positive terminal and negative pole end it is characterised in that:
Described insulating heat-conductive block is t type structure；
Described positive pole contiguous block has first boss, and described negative pole contiguous block has second boss；Described first boss and second
Boss is l type, and both are centrosymmetric setting, is located at the positive pole contiguous block medial surface relative with negative pole contiguous block respectively；
Described first boss and second boss are heat sink collectively as semiconductor laser；
The l type length portion of described first boss and second boss is affixed and welds with two end faces of insulating heat-conductive block t type structure vertical part
Connect；
The short portion of l type of described first boss and second boss is well plate format as extraction electrode；
Non- crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and insulating heat-conductive block t type structure transverse part
Two end faces be affixed and weld；
Non- crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and two outer ends of laser chip group
Face is affixed and welds, and laser chip group is installed and fixes；The installation site of described laser chip group correspond to described heat sink in
Portion, is located at the surface of insulating heat-conductive block t type structure transverse part simultaneously.
2. a kind of conduction cooling high power semiconductor laser according to claim 1 it is characterised in that: described orifice plate
Axial direction is vertical with the light direction of laser chip group.
3. a kind of conduction cooling high power semiconductor laser according to claim 1 and 2 it is characterised in that: described swash
Space is left between the transverse part of optical chip group and insulating heat-conductive block t type structure.
4. a kind of conduction cooling high power semiconductor laser according to claim 3 it is characterised in that: insulating heat-conductive block
T type structure is integrated part or molectron.
5. adopt a kind of horizontal array of the conduction cooling high power semiconductor laser assembling described in claim 1, its feature
It is: multiple conduction cooling high power semiconductor lasers are arranged successively along crystal bar axis direction, each conduction cooling Gao Gong
In rate semiconductor laser, positive pole contiguous block is vertical with crystal bar axis with the axis of the extraction electrode of negative pole contiguous block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620712927.2U CN205901066U (en) | 2016-07-06 | 2016-07-06 | Conduction cooling high power semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620712927.2U CN205901066U (en) | 2016-07-06 | 2016-07-06 | Conduction cooling high power semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205901066U true CN205901066U (en) | 2017-01-18 |
Family
ID=57771230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620712927.2U Active CN205901066U (en) | 2016-07-06 | 2016-07-06 | Conduction cooling high power semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058636A (en) * | 2016-07-06 | 2016-10-26 | 中国科学院西安光学精密机械研究所 | Conduction cooled high-power semiconductor laser |
-
2016
- 2016-07-06 CN CN201620712927.2U patent/CN205901066U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058636A (en) * | 2016-07-06 | 2016-10-26 | 中国科学院西安光学精密机械研究所 | Conduction cooled high-power semiconductor laser |
| CN106058636B (en) * | 2016-07-06 | 2021-11-16 | 中国科学院西安光学精密机械研究所 | Conduction cooling high-power semiconductor laser |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |