CN106058636A - Conduction cooling high-power semiconductor laser - Google Patents
Conduction cooling high-power semiconductor laser Download PDFInfo
- Publication number
- CN106058636A CN106058636A CN201610530533.XA CN201610530533A CN106058636A CN 106058636 A CN106058636 A CN 106058636A CN 201610530533 A CN201610530533 A CN 201610530533A CN 106058636 A CN106058636 A CN 106058636A
- Authority
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- China
- Prior art keywords
- boss
- contiguous block
- chip group
- laser
- laser chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000001816 cooling Methods 0.000 title claims abstract description 27
- 238000000605 extraction Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 5
- 239000011148 porous material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013070 direct material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a conduction cooling high-power semiconductor laser which comprises a laser chip set, an anode connecting block, a cathode connecting block and a T-shaped insulating heat-conducting block. The laser chip group is formed into a stacked array module by a plurality of laser chips, and two outer end surfaces in the stacking direction of the laser chip group are respectively a positive end and a negative end of the laser chip group; the inner side surfaces opposite to the positive and negative connecting blocks are respectively provided with a first boss and a second boss; the first boss and the second boss are both L-shaped and are arranged in central symmetry; the first boss and the second boss are jointly used as a heat sink of the laser; the L-shaped long part is attached to and welded with two end faces of the vertical part of the insulating heat conducting block; the L-shaped short part is in a pore plate form and is used as an extraction electrode; the non-convex surfaces on the opposite inner side surfaces of the positive and negative connecting blocks are attached to and welded with two end surfaces of the transverse part of the insulating heat-conducting block; the non-convex surfaces on the opposite inner side surfaces of the positive and negative connecting blocks are attached to and welded with the positive and negative ends of the laser chip set. The invention has simple structure and good integration.
Description
Technical field
The invention belongs to semiconductor laser encapsulation field, relate to a kind of conduction cooling high power semiconductor laser.
Background technology
High-power semiconductor laser (HPLD) is by its volume is little, lightweight, electro-optical efficiency is high, performance in recent years
The advantages such as stable and life-span length, have become as product the most rising in semiconductor optoelectronic industry, are widely used in
The fields such as industry, communication, military affairs, medical treatment and direct material process.Along with the extensive application of semiconductor laser, its heat problem
Always one of focus of concern, heat management has become the critical bottleneck of restriction semiconductor laser performance.Laser instrument
Heat radiation becomes one of maximum obstruction limiting the raising of semiconductor laser output, is high power semiconductor lasers encapsulation
The problem that technology have to solve.
The Conventional conduction cooling type semiconductor laser (application number pair write in structure shown in Fig. 5 and material as shown in Figure 5
The file answered is not inconsistent, and does not writes application number the most here), it is by multiple semiconductor laser chips and multiple substrate copper tungsten entirety warp
Once it is weldingly fixed on insulating heat-conductive block 4, the most again this module is welded on heat sink 9, draw anelectrode 7 and draw negative electricity
The hole of pole 8 axially the most parallel with the light direction of laser chip group.This structure has the disadvantage that
1. encapsulating structure complexity, poor reliability
This structural elements is more, and structure is complicated, preparation technology difficulty big, it is difficult to ensure that according to design in preparation process
Complete welding, and then reliability and the life-span of product can be reduced.
2. the system integration is poor
Axially the most parallel with the light direction of laser chip group due to this structure electrode hole, causes strip array direction to take
Space is bigger, is unfavorable for the system integration of limited space, limits its expansion of application when light-pumped solid state laser.
Summary of the invention
The present invention proposes a kind of conduction cooling high power semiconductor laser, with solve existing encapsulating structure complexity,
Poor reliability, the problem of system integration difference.
The technical scheme is that
A kind of conduction cooling high power semiconductor laser, it includes that laser chip group, positive pole contiguous block, negative pole connect
Block, insulating heat-conductive block；Described laser chip group is formed folded array module by multiple laser chips；The folded chip-stacked direction of array module
Two outer faces are respectively as the positive terminal of laser chip group and negative pole end, and it is characterized in that
Described insulating heat-conductive block is T-type structure；
Described positive pole contiguous block has the first boss, and described negative pole contiguous block has the second boss；Described first boss and
Second boss is L-type, and both are centrosymmetric setting, lay respectively at the inner side that positive pole contiguous block is relative with negative pole contiguous block
Face；
Heat sink collectively as semiconductor laser of described first boss and the second boss；
The L-type length portion of described first boss and the second boss is affixed with two end faces of insulating heat-conductive block T-type structure vertical part
And weld；
The short portion of L-type of described first boss and the second boss is that well plate format is as extraction electrode；
Non-crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and insulating heat-conductive block T-type structure
Two end faces of transverse part are affixed and weld；
Two of non-crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and laser chip group
Outer face is affixed and welds, and laser chip group is installed fixing；The installation site of described laser chip group is corresponding to described heat sink
Middle part, be positioned at the surface of insulating heat-conductive block T-type structure transverse part simultaneously.
When to cooling requirements the highest time, use laser chip group and the discontiguous form of insulating heat-conductive block, technique is simple；When
To cooling requirements higher time, use the form that contacts with insulating heat-conductive block of laser chip group, but complex process, difficulty be big.
Based on technique scheme, the present invention is further optimizes restriction as follows:
The axial direction of above-mentioned orifice plate is vertical with the light direction of laser chip group.
It is adjacent to weldering in the face of laser chip group by the non-projection on the relative inner face of positive pole contiguous block and negative pole contiguous block
Connect fixing, make laser chip group unsettled, i.e. leave space between the transverse part of laser chip group and insulating heat-conductive block T-type structure, with
Eliminate the adverse effect that error is brought, it is simple to actual processing.
Above-mentioned insulating heat-conductive block T-type structure is integrated part or molectron.
Utilizing multiple above-mentioned conduction cooling high power semiconductor laser, can be assembled into horizontal array, multiple conduction are cold
But high-power semiconductor laser is arranged successively along crystal bar axis direction, in each conduction cooling high power semiconductor laser
Positive pole contiguous block is vertical with crystal bar axis with the axis of the extraction electrode of negative pole contiguous block.
Present invention have the advantage that
The present invention takes full advantage of positive pole contiguous block and the area of negative pole contiguous block, matching design Liao Cheng center pair thereon
Claim two the L-type convex surfaces arranged to serve as heat sink, between L-type convex surface, be provided with heat conductive insulating block, simple in construction, compact, it is simple to
Processing and installation are fixing, reduce complexity and the volume of encapsulating structure, improve heat dispersion simultaneously.Such as Fig. 7 Yu Fig. 8 institute
Showing, as can be seen from Figure 7, in the case of same 36W continuous power output, the temperature rise of the present invention is 36.3518-25=11.3518
DEG C, the temperature rise of conventional package is 37.8136-25=12.8136 DEG C, and the present invention reduces than the temperature rise of conventional package
(12.8136-11.3518)/12.8136=11.4%.
The present invention utilizes multiple conduction cooling high power semiconductor laser to arrange successively along crystal bar axis direction, composition
Strip horizontal array, relative to the strip horizontal array of conventional package composition, it is in the space shared by length direction
Being substantially reduced, therefore the crystalline axis direction at light-pumped solid state laser can place more semiconductor laser, has preferably
The system integration.
Figure of description
Fig. 1 is the structural representation of the present invention；
Fig. 2 is that present configuration disassembles schematic diagram；
Fig. 3 is laser chip group structural representation of the present invention；
Fig. 4 is the schematic diagram of the horizontal array utilizing the present invention to assemble；
Fig. 5 be the Conventional conduction folded battle array high-power semiconductor laser of cooling disassemble schematic diagram；
Fig. 6 is the schematic diagram of the horizontal array utilizing the folded battle array high-power semiconductor laser of Conventional conduction cooling to assemble；
Fig. 7 is that the present invention exports temperature cloud picture under 36W power continuously；
Fig. 8 is that the folded battle array high-power semiconductor laser of Conventional conduction cooling exports temperature cloud picture under 36W power continuously；
In figure: 1-positive pole contiguous block；2-laser chip group；3-negative pole contiguous block；4-insulating heat-conductive block；41-insulating heat-conductive
Block T-type structure transverse part；42-insulating heat-conductive block T-type structure vertical part；5-the first boss；6-the second boss；7-draws anelectrode；8-
Draw negative electrode；9-is heat sink.
Detailed description of the invention
As depicted in figs. 1 and 2, conduction cooling high power semiconductor laser provided by the present invention includes laser chip group
2, positive pole contiguous block 1, negative pole contiguous block 3 and insulating heat-conductive block 4.
Laser chip group 2 is formed folded array module by multiple laser chips, between each laser chip use copper tungsten material with
Same distance is spaced, and can be assembled into any number of bar bar group structure, to meet the requirement of different capacity, is this as shown in Figure 3
The structural representation of invention laser chip group；Two outer faces of folded array module (i.e. laser chip group 2) stacking direction are made respectively
Positive terminal and negative pole end for laser chip group 2.
Insulating heat-conductive block 4 is T-type structure, can be integrated part and be alternatively molectron.
Positive pole contiguous block 1 has the first boss 5, and negative pole contiguous block 3 has the second boss 6；First boss 5 and the second boss
6 are L-type, and both are centrosymmetric setting, lay respectively at the medial surface that positive pole contiguous block 1 is relative with negative pole contiguous block 3.First
Heat sink collectively as semiconductor laser of boss 5 and the second boss 6.
The L-type length portion of the first boss 5 and the second boss 6 is affixed with two end faces of insulating heat-conductive block T-type structure vertical part 42
And weld；
The short portion of L-type of the second boss 6 of the first boss 5 is that well plate format is as the extraction electrode (hole on positive pole contiguous block
Plate is for introducing anelectrode, and the orifice plate on negative pole contiguous block be to introduce negative electrode) and the axial direction of orifice plate and laser chip group 2
Light direction is vertical." orifice plate " mentioned here, its " hole " is to emphasize through, can be traditional circular hole, it is also possible to be outer rim
Locate hole jaggy.
Non-crowning on the relative inner face of positive pole contiguous block 1 and negative pole contiguous block 3 is horizontal with insulating heat-conductive block T-type structure
Two end faces in portion 41 are affixed and weld；
Outside non-crowning on the relative inner face of positive pole contiguous block 1 and negative pole contiguous block 3 is with two of laser chip group 2
End face is affixed and welds, and fixedly mounts laser chip group 2.The installation site of laser chip group 2 is corresponding to described heat sink (by the
One boss 5 and the second boss 6 collectively constitute) middle part, be positioned at the surface of insulating heat-conductive block T-type structure transverse part 41 simultaneously.
During it should be noted that laser chip group 2 is fixedly mounted, laser chip group 2 can be made unsettled, i.e. laser chip group
Space is left, to eliminate the adverse effect that error is brought, it is simple to actual add between 2 and the transverse part 41 of insulating heat-conductive block T-type structure
Work.Also laser chip group 2 can be made to contact with the transverse part 41 of insulating heat-conductive block T-type structure, to meet higher cooling requirements.
As shown in Figure 4, the present invention multiple conduction cooling high power semiconductor laser is utilized to form strip horizontal array,
Multiple conduction cooling high power semiconductor lasers are arranged successively along crystal bar axis direction, and each conduction cooling high power is partly led
In body laser, positive pole contiguous block 1 is vertical with crystal bar axis with the axis of the extraction electrode of negative pole contiguous block 3.Relative to tradition
The strip horizontal array (as shown in Figure 6) of encapsulating structure composition, utilizes the horizontal array that the present invention forms, and it is at length direction
Shared space is substantially reduced.
Claims (5)
1. a conduction cooling high power semiconductor laser, including laser chip group, positive pole contiguous block, negative pole contiguous block, absolutely
Edge heat-conducting block；Described laser chip group is formed folded array module by multiple laser chips；Two of the folded chip-stacked direction of array module
Outer face is respectively as the positive terminal of laser chip group and negative pole end, it is characterised in that:
Described insulating heat-conductive block is T-type structure；
Described positive pole contiguous block has the first boss, and described negative pole contiguous block has the second boss；Described first boss and second
Boss is L-type, and both are centrosymmetric setting, lay respectively at the medial surface that positive pole contiguous block is relative with negative pole contiguous block；
Heat sink collectively as semiconductor laser of described first boss and the second boss；
The L-type length portion of described first boss and the second boss is affixed with two end faces of insulating heat-conductive block T-type structure vertical part and welds
Connect；
The short portion of L-type of described first boss and the second boss is that well plate format is as extraction electrode；
Non-crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and insulating heat-conductive block T-type structure transverse part
Two end faces be affixed and weld；
Non-crowning on the relative inner face of described positive pole contiguous block and negative pole contiguous block and two outer ends of laser chip group
Face is affixed and welds, and laser chip group is installed fixing；The installation site of described laser chip group corresponding to described heat sink in
Portion, is positioned at the surface of insulating heat-conductive block T-type structure transverse part simultaneously.
A kind of conduction cooling high power semiconductor laser the most according to claim 1, it is characterised in that: described orifice plate
Axial direction is vertical with the light direction of laser chip group.
A kind of conduction cooling high power semiconductor laser the most according to claim 1 and 2, it is characterised in that: described sharp
Space is left between the transverse part of optical chip group and insulating heat-conductive block T-type structure.
A kind of conduction cooling high power semiconductor laser the most according to claim 3, it is characterised in that: insulating heat-conductive block
T-type structure is integrated part or molectron.
5. use a kind of horizontal array conducting the assembling of cooling high power semiconductor laser described in claim 1, its feature
It is: multiple conduction cooling high power semiconductor lasers are arranged successively along crystal bar axis direction, each conduction cooling Gao Gong
In rate semiconductor laser, positive pole contiguous block is vertical with crystal bar axis with the axis of the extraction electrode of negative pole contiguous block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610530533.XA CN106058636B (en) | 2016-07-06 | 2016-07-06 | Conduction cooling high-power semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610530533.XA CN106058636B (en) | 2016-07-06 | 2016-07-06 | Conduction cooling high-power semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106058636A true CN106058636A (en) | 2016-10-26 |
| CN106058636B CN106058636B (en) | 2021-11-16 |
Family
ID=57185004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610530533.XA Active CN106058636B (en) | 2016-07-06 | 2016-07-06 | Conduction cooling high-power semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106058636B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110544871A (en) * | 2019-08-29 | 2019-12-06 | 西安域视光电科技有限公司 | Packaging structure and stacked array structure of semiconductor laser |
| CN110809841A (en) * | 2017-07-07 | 2020-02-18 | 松下知识产权经营株式会社 | Semiconductor laser device |
| CN112817103A (en) * | 2021-01-25 | 2021-05-18 | 深圳市埃尔法光电科技有限公司 | High-density multi-channel optical fiber communication system |
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| CN102064473A (en) * | 2010-12-10 | 2011-05-18 | 福州高意光学有限公司 | Visible light semiconductor laser capable of generating broadband output |
| CN103210490A (en) * | 2010-08-27 | 2013-07-17 | 夸克星有限责任公司 | Solid state light sheet or strip for general illumination |
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| CN205901066U (en) * | 2016-07-06 | 2017-01-18 | 中国科学院西安光学精密机械研究所 | Conduction cooling high-power semiconductor laser |
-
2016
- 2016-07-06 CN CN201610530533.XA patent/CN106058636B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103210490A (en) * | 2010-08-27 | 2013-07-17 | 夸克星有限责任公司 | Solid state light sheet or strip for general illumination |
| CN102064473A (en) * | 2010-12-10 | 2011-05-18 | 福州高意光学有限公司 | Visible light semiconductor laser capable of generating broadband output |
| CN103311798A (en) * | 2012-03-16 | 2013-09-18 | 山东浪潮华光光电子股份有限公司 | Packaging structure and packaging method of large-power linear array laser device |
| CN203242915U (en) * | 2013-03-29 | 2013-10-16 | 山东浪潮华光光电子股份有限公司 | Sintering fixture for double-sided packaging of large-power laser bar |
| CN205901066U (en) * | 2016-07-06 | 2017-01-18 | 中国科学院西安光学精密机械研究所 | Conduction cooling high-power semiconductor laser |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110809841A (en) * | 2017-07-07 | 2020-02-18 | 松下知识产权经营株式会社 | Semiconductor laser device |
| CN110809841B (en) * | 2017-07-07 | 2021-04-16 | 松下知识产权经营株式会社 | Semiconductor laser device |
| CN110544871A (en) * | 2019-08-29 | 2019-12-06 | 西安域视光电科技有限公司 | Packaging structure and stacked array structure of semiconductor laser |
| CN112817103A (en) * | 2021-01-25 | 2021-05-18 | 深圳市埃尔法光电科技有限公司 | High-density multi-channel optical fiber communication system |
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| Publication number | Publication date |
|---|---|
| CN106058636B (en) | 2021-11-16 |
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