CN114825027A - Conduction cooling semiconductor laser packaging structure for pumping and packaging method thereof - Google Patents
Conduction cooling semiconductor laser packaging structure for pumping and packaging method thereof Download PDFInfo
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- CN114825027A CN114825027A CN202110128707.0A CN202110128707A CN114825027A CN 114825027 A CN114825027 A CN 114825027A CN 202110128707 A CN202110128707 A CN 202110128707A CN 114825027 A CN114825027 A CN 114825027A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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Abstract
The invention relates to a conduction cooling semiconductor laser packaging structure for pumping and a packaging method thereof. The LED lamp comprises an L-shaped heat dissipation heat sink, wherein an AlN ceramic substrate is arranged on a vertical arm of the L-shaped heat dissipation heat sink, and a multi-chip array matched with the AlN ceramic substrate is arranged above the AlN ceramic substrate; the multi-chip array comprises tungsten-copper heat sinks and a mini chip which are alternately connected, wherein the tungsten-copper heat sinks and the mini chip are arranged in an array with one end aligned; grooves are formed in the AlN ceramic substrate, and the positions and the number of the grooves correspond to those of the mini chips; and the horizontal arm of the L-shaped heat dissipation heat sink is provided with a mounting and fixing hole. The invention realizes the side light emitting integrally by welding and insulating the side surface of the chip, and overcomes the problem that the existing device packaged by the centimeter bar usually emits light upwards. And meanwhile, the current is small when the LED lamp is used, and uneven heat dissipation is avoided.
Description
Technical Field
The invention relates to a conduction cooling semiconductor laser packaging structure for pumping and a packaging method thereof, belonging to the field of semiconductor laser stacked array packaging.
Background
The conduction cooling semiconductor laser has the advantages of small volume, low price, high efficiency, long service life and the like, and is mainly applied to the fields of industrial pumping, material processing, medical cosmetology, scientific research, military industry and the like. In the field of pumping applications, the focus is mainly on the Nd: YVO is YAG, Nd 4 Etc. of the crystal. In applications of crystal end-face and side-face pumping, the requirements for the package structure and the light-emitting surface of the laser are usually inconsistent. At present, a common conduction cooling semiconductor laser is mainly packaged by a centimeter bar, the bottom of the common conduction cooling semiconductor laser is insulated by AlN ceramic or SiC material and then integrally packaged on a heat dissipation heat sink, the laser packaged by the packaging structure generally emits light upwards, and heat is conducted and gathered to the bottom of the laser; there is also a common CS conduction cooled laser, where the laser bars emit light towards one side, but both of the above lasers are based on high power cm bar packaging, and the requirements for laser drive are basically low voltage and high current; meanwhile, due to the self light-emitting characteristic of the semiconductor laser, the output light beam has asymmetry in a fast axis and a slow axis, the divergence angle of the slow axis is small generally, and the divergence angle of the fast axis is large, so that the quality deviation of the whole output light beam is caused.
Chinese patent document CN204190156U discloses a conduction cooling stacked array semiconductor laser packaging structure, in which two end faces in the stacking direction of stacked array module chips are welded with a positive connecting block and a negative connecting block; two L-shaped conducting strips which are not in contact with each other are arranged on the surface of the insulating heat sink in a centrosymmetric manner and respectively serve as a leading-out positive electrode and a leading-out negative electrode; the bottoms of the positive connecting block and the negative connecting block are respectively and correspondingly welded and fixed on the long parts of the two L-shaped conducting strips, and the stacked array module corresponds to an area formed by the two L-shaped conducting strips on the surface of the insulating heat sink in an enclosing manner; the short parts of the two L-shaped conducting strips are provided with mounting holes. This patent has solved the problem that current packaging structure volume is on the large side, the system integration nature is poor. However, in the device packaged by the cm-bar, the laser emits light upwards, and the structural requirement of partial side light emission cannot be met.
Chinese patent document CN203747236U discloses a high-power semiconductor laser with a low thermal stress structure, which mainly includes four layers of structures stacked in sequence, the first layer is a heat sink serving as an anode connection block, a chip mounting area and an insulation area are arranged on a mounting plane of the heat sink, the second layer includes a semiconductor laser chip and an insulation sheet, the semiconductor laser chip is welded on the chip mounting area, the insulation sheet is mounted on the insulation area, the third layer is an electrode connection layer playing a role of conduction, and the fourth layer is a cathode connection block; in the electrode connecting layer, the part welded with the semiconductor laser chip is of a plane tooth-shaped structure and used for reducing the thermal stress between the electrode connecting layer and the chip, a gap is kept between the part and the negative connecting block, and other parts of the electrode connecting layer are welded with the negative connecting block. The structure of this patent is single busbar side light-emitting, transversely is the slow axle, and the vertical axle that is fast can adapt to complicated operational environment, satisfies the pumping demand, but if will improve the light beam quality, need install optical system additional, to the laser instrument drive of centimetre busbar encapsulation, requires the stable output of low-voltage, high current, and overall cost is high.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a conduction cooling semiconductor laser packaging structure for pumping and a packaging method thereof.
The technical scheme of the invention is as follows:
a conduction cooling semiconductor laser packaging structure for pumping comprises an L-shaped heat dissipation heat sink, wherein an AlN ceramic substrate is arranged on a vertical arm of the L-shaped heat dissipation heat sink, and a multi-chip array matched with the AlN ceramic substrate is arranged above the AlN ceramic substrate;
the multi-chip array comprises tungsten-copper heat sinks and a mini chip which are alternately connected, wherein the tungsten-copper heat sinks and the mini chip are arranged in an array with one end aligned; grooves are formed in the AlN ceramic substrate, and the positions and the number of the grooves correspond to those of the mini chips; and the horizontal arm of the L-shaped heat dissipation heat sink is provided with a mounting and fixing hole.
According to the invention, the two sides of the conduction cooling semiconductor laser packaging structure are also provided with the electrode plates, the electrode plates are L-shaped, one part of the electrode plates is connected with the multi-chip array, and the other part of the electrode plates is connected with the L-shaped heat dissipation heat sink through the electrode insulation sheet. The arrangement of the electrode insulation sheet ensures that external voltage can be effectively supplied to the multi-chip array through the electrode plate, but the external voltage cannot act on the L-shaped heat dissipation heat sink.
According to the invention, the number of the tungsten-copper heat sinks is at least 3, and the number of the mini chips is at least 2.
According to the invention, the type of the tungsten-copper heat sink is W90Cu, the parameters are 188W/(m × K), the CTE is 6.5ppm/K, and the thickness is 0.2-0.8 mm. The stress caused by package soldering can be effectively neutralized.
According to the invention, the width of the mini chip is preferably less than or equal to 3mm, the output power of a single mini chip is 1-20W, and the thickness is 115-120 mu m.
According to the invention, the length of the tungsten-copper heat sink is preferably larger than that of the mini chip, and the side surface of the tungsten-copper heat sink, which is longer than the mini chip, is provided with the insulating layer.
The width of the groove on the AlN ceramic substrate is the same as the thickness of the mini chip, the distance between the adjacent grooves is the same as the thickness of the tungsten copper heat sink, and a gap formed by the mini chip and the groove is mainly used for insulating the adjacent mini chip and simultaneously prevents solder from contacting the bottom of the mini chip.
According to the invention, the upper surface of the AlN ceramic substrate is provided with a metal layer; furthermore, the metal layer is an Au layer, and the thickness of the metal layer is 0.4-0.5 μm. The Au layer and the solder can form a stable alloy, and the AlN ceramic substrate and the multi-chip array are soldered together by the solder.
According to the invention, the number of the mounting and fixing holes is preferably 1-3. The mounting and fixing hole is used for fixing the laser and ensuring heat dissipation.
The packaging method of the conduction cooling semiconductor laser packaging structure for pumping comprises the following steps:
(1) intercepting the mini chip according to the effective absorption area of the pumped crystal and the energy requirement, and determining the chip spacing according to the heat dissipation requirement to select a tungsten-copper heat sink; alternately welding the mini chip and the tungsten copper heat sink together through high-temperature hard solder in a mode that one end of the mini chip is aligned to obtain a multi-chip array;
(2) the method comprises the steps of placing a multi-chip array above an AlN ceramic substrate, enabling the position of a groove of the AlN ceramic substrate to correspond to the position of a mini chip, welding the multi-chip array to the AlN ceramic substrate through lead-free solder, installing the AlN ceramic substrate with the multi-chip array on a heat dissipation heat sink to form a conduction cooling semiconductor laser packaging structure, finally installing electrode insulation sheets and electrode sheets on two sides of the conduction cooling semiconductor laser packaging structure, fixing a laser on an installation fixing hole, and completing the packaging of the conduction cooling semiconductor laser for pumping.
According to the invention, the high-temperature hard solder is preferably AuSn solder.
According to the invention, the lead-free solder is preferably SnAgCu solder.
Has the advantages that:
1. according to the conduction cooling semiconductor laser packaging structure for the pump, the mini chip is replaced by the centimeter bar, then the plurality of chips are packaged in series to form a multi-chip array, and the multi-chip array is packaged on a heat dissipation heat sink after being insulated by the AlN ceramic substrate. Structurally, the multi-die parallel output structure of the bars is changed into a multi-chip series output structure, in the aspect of driving, the driving requirements of low voltage and high current are changed into the driving requirements of high voltage and low current, and the driving requirements and cost are reduced. Meanwhile, the fast axis and the slow axis of the output light beam are exchanged, namely the fast axis is transversely changed, and the slow axis is vertically changed, so that the energy of the laser is more uniformly distributed in the transverse direction, the light beam quality of the output light of the crystal is improved, and the application requirement of a special structure can be met.
2. According to the conduction cooling semiconductor laser packaging structure for the pumping, due to the fact that welding insulation is carried out on the side face of the chip, side light emitting is integrally achieved, the problem that an existing device packaged by a centimeter bar generally emits light upwards is solved, and the use requirements of pumping of different special structures are met. And meanwhile, the current is small when the LED lamp is used, and uneven heat dissipation is avoided.
3. The conduction cooling semiconductor laser packaging structure for pumping provided by the invention can intercept a mini chip with a proper length according to the effective absorption area of a rodlike crystal/planar crystal to be pumped, can determine the number of chips according to required pumping energy, and is flexible and convenient.
4. The packaging method provided by the invention is simple to operate, high in manufacturing efficiency and suitable for industrial popularization and use.
Drawings
Fig. 1 is a schematic structural diagram of a conduction-cooled semiconductor laser package structure for pumping according to the present invention.
FIG. 2 is a schematic diagram of a multi-chip array structure according to the present invention.
FIG. 3 is a schematic diagram of the structure of an AlN ceramic substrate of the present invention.
Fig. 4 is a schematic front view of a conduction cooled semiconductor laser package structure for pumping in accordance with the present invention.
In the figure, 1, a mini chip, 2, a tungsten-copper heat sink, 3, an L-shaped heat dissipation heat sink, 4, an AlN ceramic substrate, 5, a positive electrode plate, 6, an electrode insulation sheet, 7, a mounting and fixing hole, 8, a light emergent surface direction, 9, a groove, 10, a metal layer 11, an insulation layer, 12 and a negative electrode plate.
Detailed Description
The present invention will be further described by way of examples, but not limited thereto, with reference to the accompanying drawings.
Example 1
As shown in fig. 1 to 3, a conduction cooling semiconductor laser packaging structure for pumping comprises an L-shaped heat sink 3, wherein an AlN ceramic substrate 4 is arranged on a vertical arm of the L-shaped heat sink 3, and a multi-chip array matched with the AlN ceramic substrate 4 is arranged above the AlN ceramic substrate 4;
the multi-chip array comprises tungsten-copper heat sinks 2 and a mini chip 1 which are alternately connected, wherein the tungsten-copper heat sinks 2 and the mini chip 1 are arranged in an array with one end aligned; grooves 9 are formed in the AlN ceramic substrate 4, and the positions and the number of the grooves 9 correspond to those of the mini chips 1; and 1 mounting and fixing hole 7 is formed in the horizontal arm of the L-shaped heat sink 3. The mounting fixing hole 7 is used for fixing the laser and ensuring heat dissipation
The tungsten copper heat sink 2 is W90Cu with parameters of 188W/(m × K), CTE of 6.5ppm/K and thickness of 0.5 mm. The width of the mini chip is 2mm, the output power of a single mini chip is 10W, the thickness of the mini chip is 120 mu m, the width of each groove 9 is equal to the thickness of the mini chip, and the distance between every two adjacent grooves 9 is equal to the thickness of the tungsten-copper heat sink 2. The length of the tungsten-copper heat sink 2 is larger than that of the mini chip 1, and an insulating layer 11 is arranged on the side surface of the tungsten-copper heat sink 2, which is longer than the mini chip 1. The gap formed by the mini chip 1 and the groove 9 is mainly used for insulating the adjacent mini chip 1, and meanwhile, solder is prevented from contacting the bottom of the mini chip 1.
The two sides of the conduction cooling semiconductor laser packaging structure are also provided with a positive electrode plate 5 and a negative electrode plate 12, the positive electrode plate 5 and the negative electrode plate 12 are both L-shaped, one part of the positive electrode plate 5 and the negative electrode plate 12 is attached to the multi-chip array, and the other part of the positive electrode plate 5 and the negative electrode plate 12 is connected with the L-shaped heat dissipation heat sink 3 through an electrode insulation sheet 6. The arrangement of the electrode insulation sheet 6 ensures that external voltage can be effectively supplied to the multi-chip array through the electrode sheet, but does not act on the L-shaped heat sink 3.
The upper surface of the AlN ceramic substrate 4 is provided with a metal layer 10.
The light emitting surface direction 8 of the conduction cooling semiconductor laser packaging structure for pumping provided by the embodiment can realize side light emitting, the problem that the existing device packaged by the centimeter bar usually emits light upwards is solved, and the use requirements of certain special structure pumping are met.
Example 2
The method of packaging a conduction-cooled semiconductor laser package for pumping according to embodiment 1, comprising the steps of:
(1) intercepting the mini chip according to the effective absorption area of the pumped crystal and the energy requirement, and determining the chip spacing according to the heat dissipation requirement to select a tungsten-copper heat sink; aligning and alternately welding the mini chip and the tungsten-copper heat sink according to one end by using AuSn welding flux, and arranging the mini chip and the tungsten-copper heat sink in an array after welding to obtain a multi-chip array;
(2) the method comprises the steps of placing a multi-chip array above an AlN ceramic substrate, enabling the position of a groove of the AlN ceramic substrate to correspond to the position of a mini chip, welding the multi-chip array to the AlN ceramic substrate through SnAgCu welding flux, installing the AlN ceramic substrate with the multi-chip array on a heat dissipation heat sink to form a conduction cooling semiconductor laser packaging structure, finally installing electrode insulation sheets and electrode sheets on two sides of the conduction cooling semiconductor laser packaging structure, fixing a laser on an installation fixing hole, and completing the packaging of the conduction cooling semiconductor laser for pumping.
Example 3
As shown in fig. 4, a conduction-cooled semiconductor laser package structure for pumping is constructed as described in embodiment 1, except that the number of the mounting fixing holes 7 is two.
Example 4
A conduction-cooled semiconductor laser package structure for pumping, the structure is as described in embodiment 1, except that the metal layer 10 is an Au layer with a thickness of 0.5 μm. The Au layer and the solder can form a stable alloy, and the AlN ceramic substrate and the multi-chip array are soldered together by the solder.
Example 5
A conduction cooling semiconductor laser packaging structure for pumping, the structure is as described in embodiment 1, except that the tungsten copper heat sink 3 is 0.3mm thick, the mini chip is 3mm wide, the output power of a single mini chip is between 20W, and the thickness is 115 μm.
Comparative example
Chinese patent document CN204190156U discloses a conduction cooling stacked-array semiconductor laser packaging structure.
The parameter pair ratio of the comparative example and the example 1 is shown in table 1, as can be seen from table 1, each parameter performance of the example 1 is superior to that of the comparative example, the example 1 can realize side light emission, and the driving requirements of low voltage and high current are changed into the driving requirements of high voltage and low current by changing the multi-die parallel output structure of the bars into a multi-chip series output structure, and simultaneously, the fast and slow axis directions of output light beams are changed, namely, the transverse direction is changed into the fast axis direction, and the vertical direction is changed into the slow axis direction, so that the energy of the laser is more uniformly distributed in the transverse direction, the light beam quality of crystal output light is improved, and the application requirements of special structures can be met.
Table 1: comparison of the Performance of the comparative example with that of example 1
Claims (10)
1. A conduction cooling semiconductor laser packaging structure for pumping is characterized by comprising an L-shaped heat dissipation heat sink, wherein an AlN ceramic substrate is arranged on a vertical arm of the L-shaped heat dissipation heat sink, and a multi-chip array matched with the AlN ceramic substrate is arranged above the AlN ceramic substrate;
the multi-chip array comprises tungsten-copper heat sinks and a mini chip which are alternately connected, wherein the tungsten-copper heat sinks and the mini chip are arranged in an array with one end aligned; grooves are formed in the AlN ceramic substrate, and the positions and the number of the grooves correspond to those of the mini chips; and the horizontal arm of the L-shaped heat dissipation heat sink is provided with a mounting and fixing hole.
2. The conduction cooled semiconductor laser package for pumping as claimed in claim 1, wherein said conduction cooled semiconductor laser package further comprises electrode pads disposed on both sides thereof, wherein said electrode pads are L-shaped, one portion is connected to said multi-chip array, and the other portion is connected to said L-shaped heat sink via an electrode insulation sheet.
3. The conduction-cooled semiconductor laser package structure for pumping of claim 1, wherein the number of tungsten-copper heat sinks is at least 3 and the number of mini chips is at least 2.
4. A conduction-cooled pumped semiconductor laser package as claimed in claim 1 wherein said tungsten-copper heat sink is of type W90Cu with parameters 188W/(m x K), CTE 6.5ppm/K, and thickness 0.2-0.8 mm.
5. The conduction-cooled semiconductor laser package structure for pumping of claim 1, wherein the width of the mini chip is less than or equal to 3mm, the output power of a single mini chip is 1-20W, and the thickness is 115-120 μm.
6. The conduction-cooled pumped semiconductor laser package structure as claimed in claim 1, wherein the tungsten copper heat sink has a length greater than the length of the mini chip, and the side of the tungsten copper heat sink that is longer than the mini chip portion is provided with an insulating layer.
7. A conduction cooled semiconductor laser package for pumping as claimed in claim 1, wherein the upper surface of the AlN ceramic substrate is provided with a metal layer; furthermore, the metal layer is an Au layer, and the thickness of the metal layer is 0.4-0.5 μm.
8. The conduction-cooled semiconductor laser package for pumping of claim 1, wherein the number of said mounting holes is 1-3.
9. The method of packaging a conduction cooled semiconductor laser package structure for pumping according to claim 2, comprising the steps of:
(1) intercepting the mini chip according to the effective absorption area of the pumped crystal and the energy requirement, and determining the chip spacing according to the heat dissipation requirement to select a tungsten-copper heat sink; alternately welding the mini chip and the tungsten copper heat sink together through high-temperature hard solder in a mode that one end of the mini chip is aligned to obtain a multi-chip array;
(2) the method comprises the steps of placing a multi-chip array above an AlN ceramic substrate, enabling the position of a groove of the AlN ceramic substrate to correspond to the position of a mini chip, welding the multi-chip array to the AlN ceramic substrate through lead-free solder, installing the AlN ceramic substrate with the multi-chip array on a heat dissipation heat sink to form a conduction cooling semiconductor laser packaging structure, finally installing electrode insulation sheets and electrode sheets on two sides of the conduction cooling semiconductor laser packaging structure, fixing a laser on an installation fixing hole, and completing the packaging of the conduction cooling semiconductor laser for pumping.
10. The packaging method of claim 9, wherein the high temperature hard solder is AuSn solder and the lead-free solder is SnAgCu solder.
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| CN202110128707.0A CN114825027A (en) | 2021-01-29 | 2021-01-29 | Conduction cooling semiconductor laser packaging structure for pumping and packaging method thereof |
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| CN202110128707.0A CN114825027A (en) | 2021-01-29 | 2021-01-29 | Conduction cooling semiconductor laser packaging structure for pumping and packaging method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118472797A (en) * | 2024-07-10 | 2024-08-09 | 北京凯普林光电科技股份有限公司 | Laser unit, linear array semiconductor laser and pumping source |
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2021
- 2021-01-29 CN CN202110128707.0A patent/CN114825027A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118472797A (en) * | 2024-07-10 | 2024-08-09 | 北京凯普林光电科技股份有限公司 | Laser unit, linear array semiconductor laser and pumping source |
| CN118472797B (en) * | 2024-07-10 | 2024-10-18 | 北京凯普林光电科技股份有限公司 | Laser unit, linear array semiconductor laser and pumping source |
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