CN107196186A - A kind of heat sink insulated type semiconductor laser and its folded battle array - Google Patents
A kind of heat sink insulated type semiconductor laser and its folded battle array Download PDFInfo
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- CN107196186A CN107196186A CN201710459332.XA CN201710459332A CN107196186A CN 107196186 A CN107196186 A CN 107196186A CN 201710459332 A CN201710459332 A CN 201710459332A CN 107196186 A CN107196186 A CN 107196186A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of heat sink insulated type semiconductor laser, including：Laser chip, conductive substrates, liquid chiller, dielectric spacer layer, the first conductive layer；Wherein, the laser chip is bonded in the conductive substrates, forms laser chip module；The laser chip module is bonded in the side end face of the liquid chiller through dielectric spacer layer；First conductive layer is arranged at the upper surface of the liquid chiller, insulated from each other with the liquid chiller, and is electrically connected with laser chip realization.The heat sink insulated type semiconductor laser provided based on the present invention and its folded battle array, in the case where realizing heat sink insulation, can effectively improve the heat-sinking capability of semiconductor laser, and modular design, be further to realize that power extends at double to lay a good foundation.
Description
Technical field
The present invention relates to field of semiconductor lasers, more particularly to the semiconductor laser of a kind of heat sink insulated type and its folded
Battle array.
Background technology
At present, the encapsulating structure of high-power semiconductor laser can be largely classified into：Liquid refrigerating type and conduction cooling type.
Cooling type is conducted due to the limitation of radiating principle, restriction is received in the realization of power, is difficult to realize high power device；Liquid
The encapsulating structure of refrigeration mode is the predominant package form for realizing high-power semiconductor laser at present.
The encapsulating structure of liquid refrigerating type mainly includes at present：Micro channels liquid refrigeration, grand channel liquid refrigeration.
For micro channels liquid refrigeration modes, bar bar is bonded directly to micro-channel heat sink（Liquid chiller）On.This
Plant in packaged type, it is heat sink not only to need as heat eliminating medium, in addition it is also necessary to be used as the electrode of laser chip（Generally positive pole）Make
With.
The packaged type of micro channels liquid refrigeration has a disadvantage that：
First, microchannel is easily because aquaporin is narrow and results in blockage；
Second, micro-channel heat sink is powered in itself, so must be cooled down using deionized water, have to ion concentration it is very high will
Ask；
3rd, powered micro-channel heat sink easily causes electrochemical corrosion in use, destroys MCA, causes
Block, cause product failure；
4th, bulk strength and the rigidity of micro-channel heat sink lack, and bending, deformation easily occur in assembling and manufacturing process,
Influence package quality.
In addition, bar bar can be first bonded in the conductive substrates that thermal coefficient of expansion matches, then carried out with micro-channel heat sink
Encapsulation, but heat dissipation path is added, reduce heat-sinking capability.
For grand channel liquid refrigeration modes, its advantage is that passage is larger, is not likely to produce channel blockage, the stream of liquid
Speed is relatively low, it is possible to reduce the erosion of passage.Meanwhile, heat-sinking capability that this also result in grand passage packaging is poor, passage
The problem of interior non-uniform temperature, and it is also powered that its is heat sink；This encapsulation is generally adapted in the relatively low application scenario of power.
It can be seen from above-mentioned analysis, due to heat sink powered, the heat radiation energy of semiconductor laser is directly or indirectly limited
Power and package quality, therefore, in the urgent need to a kind of heat sink insulation, semiconductor laser with high heat-sinking capability.
The content of the invention
The main purpose of the embodiment of the present invention is to provide a kind of heat sink insulated type semiconductor laser and its folded battle array, in reality
In the case of existing heat sink insulation, the heat-sinking capability of semiconductor laser, and modular design can be effectively improved, to enter
One step is realized that power extends at double and laid a good foundation.
Technical scheme is as follows：
The embodiment of the present invention provides a kind of heat sink insulated type semiconductor laser, including：Laser chip, conductive substrates, liquid system
Cooler, dielectric spacer layer, the first conductive layer；Wherein, the laser chip is bonded in the conductive substrates, forms laser chip
Module；The laser chip module is bonded in the side end face of the liquid chiller through dielectric spacer layer；First conductive layer
The upper surface of the liquid chiller is arranged at, it is insulated from each other with the liquid chiller, and realize electricity with the laser chip
Connection.
In such scheme, the semiconductor laser also includes：Second conductive layer；Second conductive layer is arranged at described
The lower surface of liquid chiller, second conductive layer and the lower surface of the conductive substrates insulated from each other with the liquid chiller
It is in contact, and is electrically connected through the conductive substrates with laser chip realization.
In such scheme, the positive pole of the laser chip is bonded in the conductive substrates, first conductive layer and institute
The negative pole for stating laser chip realizes electrical connection, and positive pole of second conductive layer through the conductive substrates and the laser chip is real
Now electrically connect.
In such scheme, the semiconductor laser also includes：First insulating barrier, the second insulating barrier；First insulation
Layer is arranged between first conductive layer and liquid chiller, exhausted between the first conductive layer and liquid chiller for realizing
Edge；Second insulating barrier is arranged between second conductive layer and liquid chiller, for realizing the second conductive layer and liquid
Insulation between chiller.
In such scheme, the conductive substrates are the thermal conductivity material that thermal coefficient of expansion matches with laser chip, institute
Stating conductive heat conducting material is：Copper diamond, and/or copper tungsten, and/or graphite copper, and/or graphitized alumina, and/or graphene.
In such scheme, the material of the dielectric spacer layer is：Diamond, and/or aluminium nitride, and/or aluminum oxide and/
Or beryllium oxide.
The embodiment of the present invention also provides a kind of heat sink insulated type semiconductor laser stacks, and the folded battle array is by multiple above-mentioned
Semiconductor laser is formed by stacking as unit.
In such scheme, in the multiple semiconductor laser elements for constituting the folded battle array, each semiconductor laser element
Laser chip on be additionally provided with additional substrate, or, in addition to the semiconductor laser element of head end, each semiconductor laser
The laser chip upper surface of device unit is additionally provided with additional substrate；Wherein, the additional substrate is thermal coefficient of expansion and laser core
The conductive material that piece matches, the conductive material is：Copper tungsten, and/or copper diamond, and/or graphite copper, and/or graphitized alumina,
And/or graphene, for while electric current is conducted, protecting laser chip.
In such scheme, in the multiple semiconductor laser elements for constituting the folded battle array, the semiconductor laser of end
Unit also includes：Second conductive layer；Second conductive layer is arranged at the lower surface of the liquid chiller, with the liquid system
Cooler is insulated from each other, and the second conductive layer is in contact with the lower surface of the conductive substrates, and swashs through the conductive substrates with described
Optical chip realizes electrical connection.
Beneficial effects of the present invention are as follows：
First, by using highly heat-conductive material as conductive substrates and dielectric spacer layer, realizing can with microchannel product
The continuous high power output of analogy；
Second, it is packaged between laser chip and conductive substrates using hard solder, improves the reliability of semiconductor laser,
So that product can adapt to harsher use condition；
3rd, insulated between liquid chiller and laser chip module so that can be cooled down without using deionized water, in drop
It is low to water quality requirement while, also reduce passage corrode, block risk；
4th, each semiconductor laser element carries out modularized design, can carry out connection by module, realize power
Extension, power density is high；And each module can be tested individually, aging, screening, to realize the optimization performance of final products
There is provided guarantee.
Brief description of the drawings
Fig. 1 is heat sink insulated type semiconductor laser structure schematic diagram one of the invention；
Fig. 2 is heat sink insulated type semiconductor laser structure schematic diagram two of the invention；
Fig. 3 is heat sink insulated type semiconductor laser stacks structural representation one of the invention；
Fig. 4 is heat sink insulated type semiconductor laser stacks structural representation two of the invention.
Drawing reference numeral explanation：1 is gold thread, and 2 be conductive substrates, and 3 be dielectric spacer layer, and 4 be laser chip, and 5 lead for first
Electric layer, 6 be the first insulating barrier, and 7 be the second conductive layer, and 8 be the second insulating barrier, and 9 be liquid chiller, and 10 be inlet opening, and 11 are
Apopore, 12 be additional substrate, and 13 be liquid chiller side end face.
Embodiment
The embodiment of the present invention provides a kind of heat sink insulated type semiconductor laser, and Fig. 1, Fig. 2 are heat sink insulated type of the invention
The structural representation of semiconductor laser, as shown in Figure 1 and Figure 2, the semiconductor laser can include：Laser chip 4, lead
Electric substrate 2, liquid chiller 9, dielectric spacer layer 3, the first conductive layer 5.
Wherein, the laser chip 4 is bonded in the conductive substrates 2（It is specifically as follows the positive pole bonding of laser chip 4
In in conductive substrates 2）, form laser chip module；The laser chip module is bonded in the liquid system through dielectric spacer layer 3
The side end face 13 of cooler 9；First conductive layer 5 is arranged at the upper surface of the liquid chiller 9, with the liquid chiller
9 is insulated from each other, and is electrically connected with the laser chip 4 realization；First conductive layer 5 described here can by gold thread 1 with it is described
The negative pole of laser chip 4 realizes electrical connection.
It should be noted that, in the embodiment of the present invention, the liquid chiller can be：Conductivity type liquid chiller（Liquid
Refrigerator is made of an electrically conducting material, and is included but is not limited to：Copper, gold, silver, copper diamond）Or insulated type liquid chiller（Liquid
Refrigerator is made up of insulating materials, includes but is not limited to：Ceramics, diamond, aluminium nitride）.
When the liquid chiller is conductivity type, the heat sink insulated type semiconductor laser can also include：First
Insulating barrier 6, first insulating barrier 6 is arranged between first conductive layer 5 and the upper surface of liquid chiller 9, for realizing
It is insulated from each other between first conductive layer 5 and liquid chiller 9.
When the liquid chiller is insulated type, liquid chiller insulate in itself so that the first conductive layer 5 and liquid system
Realize insulated from each other between cooler 9, therefore the first insulating barrier 6 between the first conductive layer 5 and the upper surface of liquid chiller 9 is
It is inessential, you can to set the first insulating barrier 6, can also to be not provided with.
In the embodiment of the present invention, the laser chip can be bonded to by hard solder in the conductive substrates 2, described hard
Solder can include but is not limited to：Golden tin, gold germanium.Here it is packaged using hard solder, improve semiconductor laser can
By property, harsher use condition can be adapted to.
It is preferred that, the conductive substrates 2 are the high heat-conductivity conducting material matched with the thermal coefficient of expansion of laser chip, institute
Stating conductive heat conducting material is：Copper diamond, and/or copper tungsten, and/or graphite copper, and/or graphitized alumina, and/or graphene, for example,
Conductive substrates 2 can be copper-diamond alloy material；The dielectric spacer layer 3 can be the insulating materials of high heat conduction, and the height is led
Heat insulation material can be：Diamond, and/or aluminium nitride, and/or aluminum oxide, and/or beryllium oxide.Based on highly heat-conductive material
As conductive substrates and dielectric spacer layer, the high-power output under the semiconductor laser condition of continuity can be realized, and can
Meet or exceed the heat-sinking capability of micro-channel heat sink.
From the foregoing, for single semiconductor laser element, by the design of dielectric spacer layer 3, and tying
Close insulated from each other between the first conductive layer and liquid chiller so that the upper surface of liquid chiller 9 with side end face and laser
Chip insulation（That is, liquid chiller 9 turns into uncharged heat sink module）, heat sink insulated type of the present invention is realized based on this
Semiconductor laser.
Further, heat sink insulated type semiconductor laser of the present invention can further include：Second is conductive
Layer 7；Second conductive layer 7 is arranged at the lower surface of the liquid chiller 9, insulated from each other with the liquid chiller 9, the
Two conductive layers 7 have extension relative to liquid chiller 9, and the extension causes the second conductive layer 7 and the conductive substrates 2
Lower surface is in contact, and is electrically connected through the conductive substrates 2 with the positive pole realization of the laser chip 4.
Similar, when the liquid chiller is conductivity type, the heat sink insulated type semiconductor laser can also be wrapped
Include：Second insulating barrier 8, second insulating barrier 8 is arranged between second conductive layer 7 and the lower surface of liquid chiller 9, is used
It is insulated from each other between the second conductive layer 7 and liquid chiller 9 in realizing.
When the liquid chiller is insulated type, liquid chiller insulate in itself so that the second conductive layer 7 and liquid system
Realize insulated from each other between cooler 9, therefore the second insulating barrier 8 between the second conductive layer 7 and the lower surface of liquid chiller 9 is
It is inessential, you can to set the second insulating barrier 8, can also to be not provided with.
For single semiconductor laser element, based between above-mentioned second conductive layer 7 and liquid chiller 9 that
The design of this insulation, realizes the lower surface of liquid chiller and is insulated with laser chip, with reference to foregoing dielectric spacer layer 3, with
And first design insulated from each other between conductive layer and liquid chiller, realize heat sink insulated type semiconductor of the present invention
Laser.
In the embodiment of the present invention, because liquid chiller is not charged, this causes the requirement to water quality to reduce, i.e. liquid refrigerating
The refrigerant of device internal circulation may not necessarily use deionized water, for example, it is also possible to using liquid nitrogen, freon, liquid metal
Deng.
There is liquid refrigerating loop inside liquid chiller of the present invention, can be microchannel, or be grand logical
Road, uncharged liquid chiller greatly reduces the risk that passage is corroded, blocked.
Fig. 3 is the structural representation one of heat sink insulated type semiconductor laser stacks of the invention, and the semiconductor shown in Fig. 3 swashs
Light device is folded battle array and is formed by stacking by multiple above-described semiconductor lasers as unit, the liquid of the semiconductor laser element
The side end face 13 of chiller 9 and upper surface are insulated with laser chip.
It should be noted that, in the folded battle array shown in Fig. 3, it can also be set on the laser chip of each semiconductor laser element
Additional substrate 12 is equipped with, wherein, additional substrate 12 can be set on the laser chip of the semiconductor laser element of head end（First leads
Electric layer is realized with laser chip through additional substrate 12 and electrically connected by gold thread）, can also be not provided with.
Specifically, the additional substrate 12 is the conductive material that thermal coefficient of expansion matches with laser chip, the conduction material
Material can be：Copper tungsten, and/or copper diamond, and/or graphite copper, and/or graphitized alumina, and/or graphene etc..Additional substrate 12
Effect be on the one hand protection laser chip, adjacent semiconductor laser element damages the wind of laser chip by pressure during the folded battle array encapsulation of reduction
Danger；The effect of another aspect is conduction electric current.
In actual applications, the folded battle array scheme in Fig. 3 is when being powered, because liquid chiller and laser chip module are exhausted
Edge, electric current between each semiconductor laser element, only along substrate-laser chip-additional substrate-substrate-laser chip-...
Mode flowed through from the front end of liquid chiller, it is achieved thereby that heavy completely with out electric heating.
Based on above-mentioned, because electric current only flows through from the front end of liquid chiller, therefore in actual applications, except the half of head end
Outside conductor laser unit, the first insulating barrier and the first conductive layer in other semiconductor laser elements be it is inessential, i.e.,
It can retain, can also remove, or can also be filled between other each semiconductor laser elements to enter using other materials
Row is substituted, and need to only ensure that the height of each semiconductor laser element meets encapsulation and required.
Further, in Fig. 3, the semiconductor laser element in folded battle array end can also include：Second conductive layer 7；
Second conductive layer 7 is arranged at the lower surface of the liquid chiller 9, insulated from each other with the liquid chiller 9（With it is preceding
State it is similar, can be according to the type of liquid chiller, it is considered to by whether the second insulating barrier 8 is set realize the second conductive layer 7 with
It is insulated from each other between liquid chiller 9, repeat no more here）, the second conductive layer 7 connects with the lower surface of the conductive substrates 2
Touch, and electrically connected through the conductive substrates 2 with the positive pole realization of the laser chip 4.
Folded battle array scheme in Fig. 3, in the semiconductor laser element in addition to the semiconductor laser element of end, does not exist
Its liquid chiller lower surface sets the second insulating barrier 8 and the second conductive layer 7, and this causes the thickness of each semiconductor laser to subtract
Small, this scheme is applied to the scene higher to unit area power density requirements.
Fig. 4 is the structural representation two of heat sink insulated type semiconductor laser stacks of the invention, and the semiconductor shown in Fig. 4 swashs
Light device is folded battle array and is formed by stacking by multiple semiconductor lasers described above as unit, liquid in the semiconductor laser element
Upper surface, lower surface, the side end face of refrigerator 9 are insulated with laser chip.
First conductive layer and the second conductive layer of the present invention can include but is not limited to：Copper foil, described first is conductive
Layer is specifically as follows step copper foil, and the structure design of step ensure that when carrying out folded battle array encapsulation, adjacent semiconductor
Laser element can avoid gold thread（Fig. 4 is only used for structural representation, not represents actual size）；First insulating barrier and
Two insulating barriers can include but is not limited to：Flexible PCB（FPC）, polyimides（PI）Film etc..
Semiconductor laser of the present invention also includes inlet opening 10, apopore 11.In actual applications, can be in water inlet
Hole 10, the outer of apopore 11 set groove structure, and place sealing ring in groove, enter in multiple semiconductor laser elements
When the folded battle array of row is assembled, sealing ring can realize the sealing between adjacent cells.
In the embodiment of the present invention, each semiconductor laser element is modular design method, so can be according to
Module carries out the connection between each unit, i.e., modular unit machinery very easily can be assembled into folded battle array, entered
And the extension at double of power is realized, and power density is high.Further, modular design causes each semiconductor laser
The performance parameter of device unit can be tested individually, aging, screening, can root through screening qualified semiconductor laser element
According to being actually needed, in a certain order or require, stacked battle array is assembled using sealing ring or mechanical clamp, to realize final products
Optimization performance provide ensure.
It should be noted that, involved " first ", " second " is only used for distinguishing in the embodiment of the present invention, does not constitute to reality
The limitation of border scheme, involved " on ", " under " it is relative concept, it is merely to illustrate, does not constitute to technical solution of the present invention
Limitation.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the scope of the present invention.For
For those skilled in the art, the present invention can have various modifications and variations.Institute within the spirit and principles of the invention
Any modification, equivalent substitution and improvements done etc., should be included in the scope of the protection.
Claims (10)
1. a kind of heat sink insulated type semiconductor laser, it is characterised in that including：Laser chip, conductive substrates, liquid refrigerating
Device, dielectric spacer layer, the first conductive layer；Wherein,
The laser chip is bonded in the conductive substrates, forms laser chip module；The laser chip module is through insulation
Wall is bonded in the side end face of the liquid chiller；
First conductive layer is arranged at the upper surface of the liquid chiller, insulated from each other with the liquid chiller, and with
The laser chip realizes electrical connection.
2. semiconductor laser according to claim 1, it is characterised in that the semiconductor laser also includes：Second
Conductive layer；
Second conductive layer is arranged at the lower surface of the liquid chiller, insulated from each other with the liquid chiller, and second
Conductive layer is in contact with the lower surface of the conductive substrates, and is electrically connected through the conductive substrates with laser chip realization.
3. semiconductor laser according to claim 2, it is characterised in that the positive pole of the laser chip is bonded to described
In conductive substrates, first conductive layer realizes and electrically connected that second conductive layer is through described with the negative pole of the laser chip
Conductive substrates are realized with the positive pole of the laser chip and electrically connected.
4. semiconductor laser according to claim 2, it is characterised in that the semiconductor laser also includes：First
Insulating barrier, the second insulating barrier；
First insulating barrier is arranged between first conductive layer and liquid chiller, for realizing the first conductive layer and liquid
Insulation between chiller；
Second insulating barrier is arranged between second conductive layer and liquid chiller, for realizing the second conductive layer and liquid
Insulation between chiller.
5. the semiconductor laser according to any one of Claims 1-4, it is characterised in that the conductive substrates are swollen for heat
The thermal conductivity material that swollen coefficient and laser chip match, the conductive heat conducting material is：Copper diamond, and/or copper tungsten,
And/or graphite copper, and/or graphitized alumina, and/or graphene.
6. the semiconductor laser according to any one of Claims 1-4, it is characterised in that the material of the dielectric spacer layer
Expect be：Diamond, and/or aluminium nitride, and/or aluminum oxide, and/or beryllium oxide.
7. a kind of heat sink insulated type semiconductor laser stacks, it is characterised in that the folded battle array is by multiple as claimed in claim 1
Semiconductor laser be formed by stacking as unit.
8. semiconductor laser stacks according to claim 7, it is characterised in that partly led constituting the multiple of folded battle array
In body laser unit, additional substrate is additionally provided with the laser chip of each semiconductor laser element, or, except the half of head end
Outside conductor laser unit, the laser chip upper surface of each semiconductor laser element is additionally provided with additional substrate；
Wherein, the additional substrate is the conductive material that thermal coefficient of expansion matches with laser chip, and the conductive material is：Copper
Tungsten, and/or copper diamond, and/or graphite copper, and/or graphitized alumina, and/or graphene, for while electric current is conducted, protecting
Protect laser chip.
9. semiconductor laser stacks according to claim 7, it is characterised in that partly led constituting the multiple of folded battle array
In body laser unit, the semiconductor laser element of end also includes：Second conductive layer；
Second conductive layer is arranged at the lower surface of the liquid chiller, insulated from each other with the liquid chiller, and second
Conductive layer is in contact with the lower surface of the conductive substrates, and is electrically connected through the conductive substrates with laser chip realization.
10. a kind of heat sink insulated type semiconductor laser stacks, it is characterised in that the folded battle array is by multiple such as claim 2 institute
The semiconductor laser stated is formed by stacking as unit.
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| CN111082310A (en) * | 2019-12-25 | 2020-04-28 | 苏州长光华芯光电技术有限公司 | Semiconductor laser, semiconductor laser refrigeration structure and manufacturing method thereof |
| CN111370991A (en) * | 2019-12-23 | 2020-07-03 | 深圳活力激光技术有限公司 | Semiconductor laser, stacked array and horizontal array of insulating type heat sink |
| CN114823581A (en) * | 2022-06-30 | 2022-07-29 | 中国科学院西安光学精密机械研究所 | Embedded cooling heat sink for power chip and semiconductor device |
| WO2023108954A1 (en) * | 2021-12-13 | 2023-06-22 | 探维科技(北京)有限公司 | Laser transmitter, laser radar apparatus and terminal device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370991A (en) * | 2019-12-23 | 2020-07-03 | 深圳活力激光技术有限公司 | Semiconductor laser, stacked array and horizontal array of insulating type heat sink |
| CN111082310A (en) * | 2019-12-25 | 2020-04-28 | 苏州长光华芯光电技术有限公司 | Semiconductor laser, semiconductor laser refrigeration structure and manufacturing method thereof |
| WO2023108954A1 (en) * | 2021-12-13 | 2023-06-22 | 探维科技(北京)有限公司 | Laser transmitter, laser radar apparatus and terminal device |
| CN114823581A (en) * | 2022-06-30 | 2022-07-29 | 中国科学院西安光学精密机械研究所 | Embedded cooling heat sink for power chip and semiconductor device |
| CN114823581B (en) * | 2022-06-30 | 2022-12-09 | 中国科学院西安光学精密机械研究所 | Embedded cooling heat sink for power chip and semiconductor device |
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