CN111082310A - Semiconductor laser, semiconductor laser refrigeration structure and manufacturing method thereof - Google Patents
Semiconductor laser, semiconductor laser refrigeration structure and manufacturing method thereof Download PDFInfo
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- CN111082310A CN111082310A CN201911361210.2A CN201911361210A CN111082310A CN 111082310 A CN111082310 A CN 111082310A CN 201911361210 A CN201911361210 A CN 201911361210A CN 111082310 A CN111082310 A CN 111082310A
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- semiconductor laser
- metal layer
- step metal
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- insulating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
Abstract
The invention discloses a semiconductor laser, a semiconductor laser refrigeration structure and a manufacturing method thereof, wherein the semiconductor laser refrigeration structure comprises a lower cover plate, a water return plate, a water distribution plate, a micro-channel radiating fin and an upper cover plate which are arranged from bottom to top in sequence, and the upper cover plate comprises: an insulating layer; a first step metal layer disposed on the insulating layer; a second step metal layer disposed on the insulating layer; coaxial cooling water channels are respectively arranged on the lower cover plate, the water return plate, the water distribution plate, the micro-channel radiating fins, the insulating layer and the second step metal layer, and the peripheries of the cooling water channels are sealed by welding; the length of the upper cover plate is smaller than that of the microchannel cooling fin, and the thickness of the second step metal layer is larger than that of the first step metal layer. The semiconductor laser adopting the semiconductor laser refrigeration structure can be connected to form a semiconductor laser array by adopting a sealing welding mode, so that strict sealing among the semiconductor lasers is realized.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser, a semiconductor laser refrigerating structure and a manufacturing method thereof.
Background
Because the semiconductor laser needs to dissipate heat when in operation, the semiconductor laser is often cooled by introducing water into the semiconductor laser, and a refrigeration structure of the semiconductor laser is shown in fig. 1-2 and is a modular copper microchannel cooler with a 5-layer structure, which comprises a lower cover plate 11, a water return plate 12, a water diversion plate 13, a microchannel cooling plate 14 and an upper cover plate 15 which are sequentially arranged from bottom to top. As shown in fig. 3, the semiconductor laser includes a semiconductor laser refrigeration structure 100, a light emitting unit 200, an insulating layer 400 and a cathode sheet 300, the semiconductor laser refrigeration structure includes a water inlet 16 and a water outlet 17, the insulating layer is generally made of a flexible circuit board or an adhesive film material, and the cathode sheet is a very thin gold-plated copper sheet. When the semiconductor laser works, the refrigeration structure of the semiconductor laser is used as a positive electrode, the cathode plate is used as a negative electrode, and current is led into the cathode plate from the refrigeration structure of the semiconductor laser through the light-emitting unit. When a plurality of semiconductor lasers form a semiconductor laser array, the semiconductor lasers are usually sealed by sealing rings. The sealing performance of the sealing rings made of different materials is good to some extent, but the sealing rings have a certain leakage rate more or less, so that complete sealing cannot be achieved, especially under high-temperature, low-temperature or other extreme environments. The leakage of water can seriously affect the reliability and the service life of the semiconductor laser.
Disclosure of Invention
In view of this, embodiments of the present invention provide a semiconductor laser, a semiconductor laser refrigeration structure, and a manufacturing method thereof, so as to solve the problem that when a plurality of semiconductor lasers form a semiconductor laser array, the sealing between the semiconductor lasers is not tight.
According to a first aspect, an embodiment of the present invention provides a refrigeration structure for a semiconductor laser, including a lower cover plate, a water return plate, a water division plate, a microchannel heat sink, and an upper cover plate, which are sequentially disposed from bottom to top, where the upper cover plate includes: an insulating layer; a first step metal layer disposed on the insulating layer; a second step metal layer disposed on the insulating layer; coaxial cooling water channels are respectively arranged on the lower cover plate, the water return plate, the water distribution plate, the micro-channel radiating fins, the insulating layer and the second step metal layer, and the peripheries of the cooling water channels are sealed by welding; the length of the upper cover plate is smaller than that of the microchannel cooling fin, and the thickness of the second step metal layer is larger than that of the first step metal layer.
Optionally, the first step metal layer and the second step metal layer are integrally formed.
Optionally, the first step metal layer and the second step metal layer are gold plated copper layers.
Optionally, the material of the insulating layer is ceramic.
Optionally, the lower cover plate, the water return sheet, the water distribution sheet and the microchannel heat sink are gold-plated copper sheets.
According to a second aspect, an embodiment of the present invention provides a semiconductor laser including: the semiconductor laser refrigeration structure of the first aspect or any embodiment of the first aspect; the light-emitting unit is arranged on the part of the microchannel cooling fin, which is longer than the upper cover plate, and the light-emitting unit and the upper cover plate are arranged at intervals; and the cathode sheet is arranged on the light-emitting unit, extends to the first step metal layer and is at least partially contacted with the first step metal layer.
Optionally, the semiconductor laser further comprises: and the tungsten copper layer is arranged between the light emitting unit and the micro-channel heat sink.
Optionally, the light emitting unit is a bar.
According to a third aspect, an embodiment of the present invention provides a semiconductor laser array, including: a plurality of semiconductor lasers as in the second aspect or any embodiment of the second aspect, wherein the plurality of semiconductor lasers are stacked and connected by welding; the cathode is arranged on the upper surfaces of the stacked semiconductor lasers; and the anodes are arranged on the lower surfaces of the stacked semiconductor lasers.
According to a fourth aspect, an embodiment of the present invention provides a method for manufacturing a refrigeration structure of a semiconductor laser, including: a lower cover plate, a water return plate, a water distribution plate and a micro-channel radiating fin are sequentially formed from bottom to top; forming an insulating layer on the microchannel heat sink; forming a first step metal layer and a second step metal layer on the insulating layer; coaxial cooling water channels are respectively arranged on the lower cover plate, the water return plate, the water distribution plate, the micro-channel radiating fins, the insulating layer and the second step metal layer, and the peripheries of the cooling water channels are sealed by welding; the length of the insulating layer is smaller than that of the microchannel cooling fin, and the thickness of the second step metal layer is larger than that of the first step metal layer.
Compared with the semiconductor laser refrigerating structure in the prior art, the semiconductor laser refrigerating structure and the manufacturing method thereof provided by the embodiment of the invention have the advantages that the uppermost structural copper layer of the semiconductor laser refrigerating structure is replaced by the insulating layer, the first step metal layer and the second step metal layer on the surface of the insulating layer, so that the four layers below the semiconductor laser refrigerating structure are anodes, the first step metal layer and the second step metal layer on the insulating layer of the semiconductor laser refrigerating structure are cathodes, the semiconductor laser refrigerating structure is provided with the anodes and the cathodes simultaneously, the length of the insulating layer is smaller than that of the microchannel cooling fin, the thickness of the first step metal layer is smaller than that of the second step metal layer, one end of the microchannel cooling fin is provided with a platform lower than the first step metal layer and the second step metal layer, and a light-emitting unit can be arranged on, therefore, the semiconductor lasers are prepared, when the plurality of semiconductor lasers are stacked to form a semiconductor laser array, the height of the second step metal layer is the highest, so that a space exists between the stacking surface of each semiconductor laser and each light emitting unit, and the uppermost layer of the refrigeration structure of the semiconductor lasers is the second step metal layer, so that the semiconductor lasers can be connected to form the semiconductor laser array in a sealing welding mode, strict sealing among the semiconductor lasers is realized, and the problem that the semiconductor lasers are not tightly sealed when the plurality of semiconductor lasers form the semiconductor laser array is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 shows a schematic structure diagram of a refrigeration structure of a semiconductor laser in the prior art;
fig. 2 is a perspective view showing a refrigeration structure of a semiconductor laser in the prior art;
fig. 3 shows a schematic diagram of a semiconductor laser in the prior art;
fig. 4 is a schematic structural diagram illustrating a refrigeration structure of a semiconductor laser according to an embodiment of the present invention;
fig. 5 shows a schematic structural diagram of a semiconductor laser according to an embodiment of the present invention;
fig. 6 shows a schematic structural diagram of a semiconductor laser array according to an embodiment of the present invention;
fig. 7 shows a process diagram (one) for forming a semiconductor laser cooling structure according to an embodiment of the invention;
fig. 8 shows a process diagram of forming a semiconductor laser cooling structure according to an embodiment of the invention (second);
fig. 9 shows a process diagram (third) for forming a semiconductor laser cooling structure according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a semiconductor laser refrigerating structure, as shown in fig. 4, which comprises a lower cover plate 1, a backwater plate 2, a water diversion plate 3, a microchannel cooling fin 4 and an upper cover plate 5 which are arranged from bottom to top in sequence, wherein the upper cover plate 5 comprises: an insulating layer 51; a first step metal layer 52 disposed on the insulating layer 51; a second step metal layer 53 disposed on the insulating layer 51; coaxial cooling water channels are respectively arranged on the lower cover plate 1, the water return plate 2, the water distribution plate 3, the microchannel cooling fins 4, the insulating layer 51 and the second step metal layer 53, and the peripheries of the cooling water channels are sealed by welding; the length of the upper cover sheet 5 is smaller than that of the microchannel heat sink 4, and the thickness of the second step metal layer 53 is larger than that of the first step metal layer 52.
Specifically, the lower cover plate 1, the water return plate 2, the water distribution plate 3 and the microchannel heat sink 4 are made of the same metal, and the first step metal layer 52 is connected with the second step metal layer 53 to form a whole and cover the insulating layer 51. The length of the insulating layer 51 is smaller than that of the microchannel heat sink 4, and the first step metal layer 52 is adjacent to a portion of the microchannel heat sink 4 longer than the insulating layer 51. The insulating layer 51 functions to insulate the microchannel heat sink 4 from the first stepped metal layer 52 and the second stepped metal layer 53. The lower cover plate 1, the water return plate 2, the water distribution plate 3, the micro-channel radiating fins 4, the insulating layer 51 and the second step metal layer 53 are all provided with water inlets and water outlets, and are provided with coaxial cooling water channels. The lower cover plate 1, the water return plate 2, the water distribution plate 3, the micro-channel radiating fins 4, the insulating layer 51, the second step metal layer 53 and the first step metal layer 52 are connected into a whole through diffusion welding.
Compared with the semiconductor laser refrigerating structure in the prior art, the semiconductor laser refrigerating structure provided by the embodiment of the invention has the advantages that the uppermost structural copper layer of the semiconductor laser refrigerating structure is replaced by the insulating layer, the first step metal layer and the second step metal layer on the surface of the insulating layer, so that the four layers below the semiconductor laser refrigerating structure are anodes, the first step metal layer and the second step metal layer on the insulating layer of the semiconductor laser refrigerating structure are cathodes, the semiconductor laser refrigerating structure is provided with the anodes and the cathodes simultaneously, the length of the insulating layer is smaller than that of the microchannel cooling fin, the thickness of the first step metal layer is smaller than that of the second step metal layer, one end of the microchannel cooling fin is provided with a platform lower than the first step metal layer and the second step metal layer, a light-emitting unit can be arranged on the platform, and a semiconductor laser is prepared, when a plurality of semiconductor lasers are stacked to form a semiconductor laser array, the height of the second step metal layer is the highest, so that a space exists between the stacking surface of each semiconductor laser and each light emitting unit, and the uppermost layer of the semiconductor laser refrigeration structure is the second step metal layer, so that the semiconductor lasers can be connected to form the semiconductor laser array in a sealing welding mode, strict sealing among the semiconductor lasers is realized, and the problem that the semiconductor lasers are not tightly sealed when the semiconductor laser array is formed by the plurality of semiconductor lasers is solved.
In an alternative embodiment, the first stepped metal layer 52 and the second stepped metal layer 53 are integrally formed. Specifically, the materials of the first step metal layer 52 and the second step metal layer 53 are the same as those of the lower cover plate 1, the water return plate 2, the water diversion plate 3 and the microchannel heat sink 4. Since the first step metal layer 52 is connected to the second step metal layer 53, the first step metal layer 52 and the second step metal layer 53 may be integrally formed to reduce the manufacturing process of the semiconductor laser cooling structure.
In an optional embodiment, the lower cover plate 1, the water return plate 2, the water distribution plate 3 and the microchannel heat sink 4 are gold-plated copper sheets. The materials and the preparation processes of the lower cover plate 1, the water return plate 2, the water distribution plate 3 and the microchannel heat radiating fin 4 are relatively mature, so that the materials of the lower cover plate 1, the water return plate 2, the water distribution plate 3 and the microchannel heat radiating fin 4 in the embodiment of the invention are the same as those in the prior art, and are all prepared by adopting gold-plated copper sheets.
In an alternative embodiment, the first step metal layer 52 and the second step metal layer 53 are gold plated copper layers. Specifically, when a semiconductor laser array is formed for a plurality of semiconductor lasers, and the semiconductor lasers are connected by welding, for convenience of welding, the materials of the first step metal layer 52 and the second step metal layer 53 are the same as the material of the lower cover plate 1, and a gold-plated copper sheet is also selected.
In an alternative embodiment, the material of the insulating layer 51 is ceramic. Specifically, the diffusion welding technology of copper and ceramic in China at present tends to be mature, so that the material of the insulating layer 1 is selected from ceramic, and the insulating layer 51 can be conveniently welded with the lower cover plate 1, the water return plate 2, the water diversion plate 3, the microchannel cooling fin 4, the first step metal layer 52 and the second step metal layer 53.
An embodiment of the present invention further provides a semiconductor laser, as shown in fig. 5, including: the semiconductor laser refrigeration structure 10 in any of the above embodiments; a light emitting unit 20 disposed on a portion of the microchannel heat sink 4 longer than the upper cover 5, the light emitting unit 20 being spaced from the upper cover 5; and a cathode sheet 30 disposed on the light emitting cell 20, extending to the first step metal layer 52, and at least partially contacting the first step metal layer 52.
In the embodiment of the present invention, the cathode sheet 30 is used to connect the light emitting cell 20 with the first step metal layer 52. The semiconductor laser cooling structure 10, the light emitting unit 20, and the cathode sheet 30 may be connected by soldering. When the semiconductor laser works, water flows through the semiconductor laser refrigeration structure, the water flows in from the water inlet hole, flows out from the water outlet hole through the micro-channel in the semiconductor laser refrigeration structure, the lower cover plate 1, the water return plate 2, the water distribution plate 3 and the micro-channel radiating fins 4 serve as anodes, the first step metal layer 52 and the second step metal layer 53 serve as cathodes, current is led into the light-emitting unit from the anodes, the current is led into the cathodes through the cathode plates, the insulating layer plays an insulating role, and at the moment, the semiconductor laser emits light.
Compared with the semiconductor laser in the prior art, the semiconductor laser provided by the embodiment of the invention has the advantages that the uppermost structural copper layer of the refrigeration structure of the semiconductor laser is replaced by the insulating layer and the first step metal layer and the second step metal layer on the surface of the insulating layer, so that the four layers below the refrigeration structure of the semiconductor laser are anodes, the first step metal layer and the second step metal layer on the insulating layer of the refrigeration structure of the semiconductor laser are cathodes, the refrigeration structure of the semiconductor laser is simultaneously provided with the anodes and the cathodes, the length of the insulating layer is smaller than that of the microchannel heat sink, the thickness of the first step metal layer is smaller than that of the second step metal layer, a platform lower than the first step metal layer and the second step metal layer is arranged at one end of the microchannel heat sink, a light-emitting unit can be arranged on the platform, when a plurality of semiconductor lasers are stacked to form a semiconductor laser array, the height of the second step metal layer is the highest, so that a space exists between the stacking surface of each semiconductor laser and each light emitting unit, and the uppermost layer of the semiconductor laser refrigeration structure is the second step metal layer, so that the semiconductor lasers can be connected to form the semiconductor laser array in a sealing welding mode, strict sealing among the semiconductor lasers is realized, and the problem that the semiconductor lasers are not tightly sealed when the semiconductor laser array is formed by the plurality of semiconductor lasers is solved.
In an alternative embodiment, the light emitting unit 20 is a bar.
In an alternative embodiment, the semiconductor laser further comprises: and a tungsten copper layer 40 disposed between the light emitting unit 20 and the microchannel heat sink 4. Specifically, since the light emitting unit 20 and the microchannel heat sink 4 are connected by welding, there is a difference in thermal expansion coefficient between the light emitting unit 20 and the microchannel heat sink 4, and in order to reduce the thermal expansion between the light emitting unit 20 and the microchannel heat sink 4, a tungsten copper layer 40 may be disposed between the light emitting unit 20 and the microchannel heat sink 4, and then the microchannel heat sink 4, the tungsten copper layer 40 and the light emitting unit 20 are welded.
An embodiment of the present invention further provides a semiconductor laser array, as shown in fig. 6, including: a plurality of semiconductor lasers as in any of the above embodiments, the plurality of semiconductor lasers being stacked and connected by soldering; a cathode 50 disposed on the upper surface of the stacked semiconductor lasers; and the anode 60 is arranged on the lower surfaces of the stacked semiconductor lasers.
Specifically, when the semiconductor lasers are assembled into an array, the semiconductor lasers can be connected with each other, and the semiconductor lasers can be connected with the cathode 50 and the anode 60 through indium or indium tin solder in a welding manner, so that the semiconductor lasers can be sealed in and out of a water seal. Compared with the semiconductor laser arrays in the prior art, the semiconductor laser array provided by the embodiment of the invention has the advantages that the height of each layer of cathode plate is reduced on the stacking surface of each semiconductor laser array, the height of each semiconductor laser is reduced to a certain extent, and the number of light-emitting units is effectively increased within a certain height when the arrays are formed, so that the power density of the arrays is increased.
Compared with the semiconductor laser array in the prior art, the semiconductor laser array provided by the embodiment of the invention has the advantages that the uppermost structural copper layer of the refrigeration structure of the semiconductor laser is replaced by the insulating layer and the first step metal layer and the second step metal layer on the surface of the insulating layer, so that the four layers below the refrigeration structure of the semiconductor laser are anodes, the first step metal layer and the second step metal layer on the insulating layer of the refrigeration structure of the semiconductor laser are cathodes, the refrigeration structure of the semiconductor laser is simultaneously provided with the anodes and the cathodes, the length of the insulating layer is less than that of the microchannel heat sink, the thickness of the first step metal layer is less than that of the second step metal layer, one end of the microchannel heat sink is provided with a platform lower than the first step metal layer and the second step metal layer, a light-emitting unit can be arranged on the platform, when a plurality of semiconductor lasers are stacked to form a semiconductor laser array, the height of the second step metal layer is the highest, so that a space exists between the stacking surface of each semiconductor laser and each light emitting unit, and the uppermost layer of the semiconductor laser refrigeration structure is the second step metal layer, so that the semiconductor lasers can be connected to form the semiconductor laser array in a sealing welding mode, strict sealing among the semiconductor lasers is realized, and the problem that the semiconductor lasers are not tightly sealed when the semiconductor laser array is formed by the plurality of semiconductor lasers is solved.
The embodiment of the invention also provides a manufacturing method of the semiconductor laser refrigerating structure, which comprises the following steps: a lower cover plate 1, a backwater plate 2, a water distribution plate 3 and a microchannel cooling fin 4 are sequentially formed from bottom to top, as shown in figure 7; forming an insulating layer 51 on the microchannel heat sink, as shown in fig. 8; forming a first step metal layer 52 and a second step metal layer 53 on the insulating layer 51, as shown in fig. 9; coaxial cooling water channels are respectively arranged on the lower cover plate 1, the water return plate 2, the water distribution plate 3, the microchannel cooling fins 4, the insulating layer 51 and the second step metal layer 53, and the peripheries of the cooling water channels are sealed by welding; the length of the insulating layer 51 is smaller than that of the microchannel heat sink 4, and the thickness of the second step metal layer 53 is larger than that of the first step metal layer 52.
Compared with the semiconductor laser refrigerating structure in the prior art, the manufacturing method of the semiconductor laser refrigerating structure provided by the embodiment of the invention has the advantages that the uppermost structural copper layer of the semiconductor laser refrigerating structure is replaced by the insulating layer, the first step metal layer and the second step metal layer on the surface of the insulating layer, the four layers below the semiconductor laser refrigerating structure are anodes, the first step metal layer and the second step metal layer on the insulating layer of the semiconductor laser refrigerating structure are cathodes, the semiconductor laser refrigerating structure is provided with the anodes and the cathodes simultaneously, the length of the insulating layer is smaller than that of the microchannel cooling fin, the thickness of the first step metal layer is smaller than that of the second step metal layer, one end of the microchannel cooling fin is provided with a platform lower than the first step metal layer and the second step metal layer, and a light-emitting unit can be arranged on the platform, therefore, the semiconductor lasers are prepared, when the plurality of semiconductor lasers are stacked to form a semiconductor laser array, the height of the second step metal layer is the highest, so that a space exists between the stacking surface of each semiconductor laser and each light emitting unit, and the uppermost layer of the refrigeration structure of the semiconductor lasers is the second step metal layer, so that the semiconductor lasers can be connected to form the semiconductor laser array in a sealing welding mode, strict sealing among the semiconductor lasers is realized, and the problem that the semiconductor lasers are not tightly sealed when the plurality of semiconductor lasers form the semiconductor laser array is solved.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.
Claims (10)
1. The utility model provides a semiconductor laser refrigeration structure, includes lower cover plate, return water piece, water diversion piece, microchannel fin, the upper cover plate that sets gradually from bottom to top, its characterized in that, the upper cover plate includes:
an insulating layer;
a first step metal layer disposed on the insulating layer;
a second step metal layer disposed on the insulating layer;
coaxial cooling water channels are respectively arranged on the lower cover plate, the water return plate, the water distribution plate, the micro-channel radiating fins, the insulating layer and the second step metal layer, and the peripheries of the cooling water channels are sealed by welding;
the length of the upper cover plate is smaller than that of the microchannel cooling fin, and the thickness of the second step metal layer is larger than that of the first step metal layer.
2. A semiconductor laser cooling structure as claimed in claim 1, wherein the first stepped metal layer and the second stepped metal layer are integrally formed.
3. A semiconductor laser cooling structure as claimed in claim 1, wherein the first and second stepped metal layers are gold plated copper layers.
4. A semiconductor laser cooling structure as claimed in claim 1, wherein the material of the insulating layer is ceramic.
5. A semiconductor laser cooling structure as claimed in claim 1, wherein the lower cover plate, the water returning plate, the water dividing plate, and the micro-channel heat sink are gold-plated copper sheets.
6. A semiconductor laser, comprising:
a semiconductor laser cooling structure as claimed in any one of claims 1 to 5;
the light-emitting unit is arranged on the part of the microchannel cooling fin, which is longer than the upper cover plate, and the light-emitting unit and the upper cover plate are arranged at intervals;
and the cathode sheet is arranged on the light-emitting unit, extends to the first step metal layer and is at least partially in contact with the first step metal layer.
7. A semiconductor laser as claimed in claim 6 further comprising:
a tungsten copper layer disposed between the light emitting unit and the microchannel heat sink.
8. The semiconductor laser of claim 6, wherein the light emitting cells are bars.
9. An array of semiconductor lasers, comprising:
a plurality of semiconductor lasers as claimed in any of claims 6-8, a plurality of said semiconductor lasers being arranged in a stack, a plurality of said semiconductor lasers being connected by soldering;
the cathode is arranged on the upper surfaces of the stacked semiconductor lasers;
and the anodes are arranged on the lower surfaces of the stacked semiconductor lasers.
10. A method for manufacturing a refrigeration structure of a semiconductor laser is characterized by comprising the following steps:
a lower cover plate, a water return plate, a water distribution plate and a micro-channel radiating fin are sequentially formed from bottom to top;
forming an insulating layer on the microchannel heat sink;
forming a first step metal layer and a second step metal layer on the insulating layer;
coaxial cooling water channels are respectively arranged on the lower cover plate, the water return plate, the water distribution plate, the micro-channel radiating fins, the insulating layer and the second step metal layer, and the peripheries of the cooling water channels are sealed by welding;
the length of the insulating layer is smaller than that of the microchannel cooling fin, and the thickness of the second step metal layer is larger than that of the first step metal layer.
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| CN201911361210.2A CN111082310A (en) | 2019-12-25 | 2019-12-25 | Semiconductor laser, semiconductor laser refrigeration structure and manufacturing method thereof |
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| CN201911361210.2A CN111082310A (en) | 2019-12-25 | 2019-12-25 | Semiconductor laser, semiconductor laser refrigeration structure and manufacturing method thereof |
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Address after: 215163 No.2 workshop-1-102, No.2 workshop-2-203, zone a, industrial square, science and Technology City, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Applicant after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Address before: 215163 Building 2, No.189, Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Applicant before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |
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Application publication date: 20200428 |