CN111868940B - 光传感器电路、光传感器装置及显示装置 - Google Patents

光传感器电路、光传感器装置及显示装置 Download PDF

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Publication number
CN111868940B
CN111868940B CN201980020363.2A CN201980020363A CN111868940B CN 111868940 B CN111868940 B CN 111868940B CN 201980020363 A CN201980020363 A CN 201980020363A CN 111868940 B CN111868940 B CN 111868940B
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China
Prior art keywords
switching transistor
transistor
period
light receiving
gate
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Chinese (zh)
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CN111868940A (zh
Inventor
津吹将志
纲岛贵德
盐川真里奈
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Magno Haote Co ltd
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Japan Display Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1601—Constructional details related to the housing of computer displays, e.g. of CRT monitors, of flat displays
    • G06F1/1605—Multimedia displays, e.g. with integrated or attached speakers, cameras, microphones
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/289—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being transparent or semi-transparent devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
CN201980020363.2A 2018-03-20 2019-03-08 光传感器电路、光传感器装置及显示装置 Active CN111868940B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018052337A JP7039346B2 (ja) 2018-03-20 2018-03-20 光センサー回路、光センサー装置、および、表示装置
JP2018-052337 2018-03-20
PCT/JP2019/009306 WO2019181558A1 (ja) 2018-03-20 2019-03-08 光センサー回路、光センサー装置、および、表示装置

Publications (2)

Publication Number Publication Date
CN111868940A CN111868940A (zh) 2020-10-30
CN111868940B true CN111868940B (zh) 2023-12-08

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US (4) US11189745B2 (enExample)
JP (1) JP7039346B2 (enExample)
CN (1) CN111868940B (enExample)
WO (1) WO2019181558A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039346B2 (ja) * 2018-03-20 2022-03-22 株式会社ジャパンディスプレイ 光センサー回路、光センサー装置、および、表示装置
CN111508987A (zh) * 2020-04-29 2020-08-07 Tcl华星光电技术有限公司 一种传感器及其制作方法以及光电转换装置
CN111508986A (zh) * 2020-04-29 2020-08-07 Tcl华星光电技术有限公司 一种传感器及其制作方法以及光电转换装置
JP7576474B2 (ja) 2021-01-26 2024-10-31 株式会社ジャパンディスプレイ 検出装置
KR102820522B1 (ko) * 2021-04-30 2025-06-17 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US12295194B2 (en) 2021-04-30 2025-05-06 Samsung Display Co., Ltd. Display device including protective layer overlapping backplane line and method of manufacturing the same
CN113451422B (zh) * 2021-06-30 2023-06-06 中国科学技术大学 一种光电探测器的调节方法及其应用
KR20230166546A (ko) * 2022-05-31 2023-12-07 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시 장치
WO2024176379A1 (ja) * 2023-02-22 2024-08-29 シャープディスプレイテクノロジー株式会社 表示装置及びその製造方法

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EP1903788A1 (en) * 2006-09-25 2008-03-26 Integrated Digital Technologies Photo detector array
CN102005464A (zh) * 2009-09-01 2011-04-06 台湾积体电路制造股份有限公司 像素区域上具有电容器的背照式图像传感器
JP2013080892A (ja) * 2011-09-21 2013-05-02 Sharp Corp 光センサおよび電子機器
WO2015111118A1 (ja) * 2014-01-27 2015-07-30 株式会社Ｊｏｌｅｄ 有機ｅｌ表示装置および駆動方法
CN107527954A (zh) * 2016-06-20 2017-12-29 株式会社日本显示器 半导体装置

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JP5121478B2 (ja) 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト 光センサー素子、撮像装置、電子機器、およびメモリー素子
KR101672344B1 (ko) 2010-05-20 2016-11-04 삼성전자주식회사 광센싱 회로, 상기 광센싱 회로의 구동 방법, 및 상기 광센싱 회로를 채용한 광센싱 장치
JP2012256819A (ja) * 2010-09-08 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体装置
US8716646B2 (en) * 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
TWI414765B (zh) 2010-12-03 2013-11-11 E Ink Holdings Inc 光感測電路單元
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
CN104699344B (zh) 2015-03-30 2017-11-28 京东方科技集团股份有限公司 触控面板及其制造方法、触控显示装置
JP7039346B2 (ja) * 2018-03-20 2022-03-22 株式会社ジャパンディスプレイ 光センサー回路、光センサー装置、および、表示装置

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
EP1903788A1 (en) * 2006-09-25 2008-03-26 Integrated Digital Technologies Photo detector array
CN102005464A (zh) * 2009-09-01 2011-04-06 台湾积体电路制造股份有限公司 像素区域上具有电容器的背照式图像传感器
JP2013080892A (ja) * 2011-09-21 2013-05-02 Sharp Corp 光センサおよび電子機器
WO2015111118A1 (ja) * 2014-01-27 2015-07-30 株式会社Ｊｏｌｅｄ 有機ｅｌ表示装置および駆動方法
CN107527954A (zh) * 2016-06-20 2017-12-29 株式会社日本显示器 半导体装置

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Publication number Publication date
CN111868940A (zh) 2020-10-30
US11189745B2 (en) 2021-11-30
JP2019165130A (ja) 2019-09-26
US11973161B2 (en) 2024-04-30
US20220077344A1 (en) 2022-03-10
WO2019181558A1 (ja) 2019-09-26
US20240213393A1 (en) 2024-06-27
US20210005771A1 (en) 2021-01-07
US20230137257A1 (en) 2023-05-04
JP7039346B2 (ja) 2022-03-22
US11575062B2 (en) 2023-02-07

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