CN111863979A - Gallium oxide photoelectric detector and preparation method thereof - Google Patents
Gallium oxide photoelectric detector and preparation method thereof Download PDFInfo
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- CN111863979A CN111863979A CN202010707827.1A CN202010707827A CN111863979A CN 111863979 A CN111863979 A CN 111863979A CN 202010707827 A CN202010707827 A CN 202010707827A CN 111863979 A CN111863979 A CN 111863979A
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 12
- 230000008901 benefit Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present disclosure provides a gallium oxide photodetector, comprising: a substrate (100); a gallium oxide layer (200) provided on the surface of the substrate (100); first electrode (300) and second electrode (400), first electrode (300) and second electrode (400) contactless, first electrode (300) and second electrode (400) all include a plurality of layers of propping up, and the inside and the surface in gallium oxide layer (200) are inlayed to the one end on a plurality of layers of propping up, and the other end interconnect is in the outside on gallium oxide layer (200). On the other hand, the disclosure also provides a preparation method of the gallium oxide photoelectric detector. The structure in the disclosure is simple to manufacture, the electric field is uniformly distributed in the whole detector, and the quantum efficiency, the responsivity, the response speed, the linear response range and other performances of the gallium oxide solar blind photoelectric detector can be obviously improved.
Description
Technical Field
The application relates to the technical field of photoelectric detection, in particular to a gallium oxide photoelectric detector and a preparation method thereof.
Background
The photoelectric detector is a photoelectronic device which can convert an optical signal into an electric signal so as to realize the detection of light. The solar blind band refers to ultraviolet light with the wavelength range of 200-280 nm. Due to strong absorption of the atmospheric ozone layer, the sunlight cannot reach the ground surface, so that solar blind detection has the outstanding advantage of small background interference, and has wide application prospects in the aspects of space astronomical telescopes, missile early warning, non-line-of-sight secret optical communication, marine fog breaking navigation, power grid monitoring, fire remote sensing, biochemical monitoring and the like. The photoelectric detectors may be classified into an external photoelectric effect detector and an internal photoelectric effect detector according to a mechanism. The external photoelectric effect detector mainly comprises a photomultiplier tube, an image intensifier and the like by means of the external photoelectric effect of electrons escaping from the surface of a material after absorbing photons, and the device generally needs high vacuum and has larger volume and is also fragile. The internal photoelectric effect includes a photoconductive effect and a photovoltaic effect. The photoconductive effect refers to the fact that after a material absorbs photons, electronic transition occurs, so that the concentration of free carriers is increased, and the resistivity is reduced. The photovoltaic effect refers to that free carriers generated under illumination are respectively transported to two ends of a device under the action of a built-in electric field of the device, so that the voltage at the two ends of the device is reduced. The inner photoelectric effect detector has the outstanding advantages of miniaturization, no need of vacuum and the like. At present, materials for solar blind detection of the internal photoelectric effect mainly comprise Si, GaAs, GaP, GaN, SiC, ZnO, diamond, gallium oxide and the like. Gallium oxide has significant advantages over other materials. Gallium oxide is a direct band gap semiconductor, the forbidden band width of the gallium oxide is as high as 4.9 electron volts, the gallium oxide directly corresponds to a solar-blind waveband, and the gallium oxide cannot be interfered by light with the wavelength longer than the solar-blind waveband. In addition, the ultra-wide forbidden band width ensures that the breakdown field intensity of the gallium oxide is high, the high temperature resistance and the radiation resistance are good, and the tolerance to the extreme environment and the working condition is better. In addition, the gallium oxide can be prepared by a mode-guiding method, controllable n-type doping is realized, and the production cost is lower.
Gallium oxide is an ideal solar blind detection material, and the structures adopted by the solar blind photodetectors based on gallium oxide reported at present can be divided into a vertical structure and a plane structure. The electrodes in the vertical structure are respectively grown on the upper side and the lower side of the gallium oxide layer, and the electrodes in the planar structure are grown on the same side of the gallium oxide layer. The manufacturing process of the vertical structure device is complicated, and the production and manufacturing cost is increased. The preparation of the planar structure is simple, but the electric field generated by the electrode is concentrated on the surface of the gallium oxide, and the electric field distribution in the gallium oxide is almost zero, so that the effective light absorption area of the device exists on the surface of the gallium oxide, and the photocurrent of the device mainly flows in the surface area. However, the surface of the semiconductor often has a large number of defects caused by dangling bonds, adsorbates, and the like, which results in poor performance of the planar structure photoelectric detector, so that a novel gallium oxide solar blind detector needs to be designed, and an electric field is uniformly distributed in the whole device through a simpler process, so as to improve the performance of the gallium oxide solar blind detector.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a gallium oxide photodetector and a method for manufacturing the same, which at least solve the above technical problems.
(II) technical scheme
One aspect of the present disclosure provides a gallium oxide photodetector, including: a substrate 100; a gallium oxide layer 200 provided on the surface of the substrate 100; first electrode 300 and second electrode 400, first electrode 300 and second electrode 400 contactless, first electrode 300 and second electrode 400 all include a plurality of layers that prop, and the one end of a plurality of layers is inlayed in the inside and the surface of gallium oxide layer 200, and the other end interconnect is in the outside of gallium oxide layer 200.
In a further embodiment, the other ends of the plurality of branches are connected to each other and extend to the surface of the substrate 100.
In a further embodiment, the plurality of branch layers of the first electrode 300 correspond one-to-one to the plurality of branch layers of the second electrode 400.
In a further embodiment, the spacing between the first electrode 300 and the second electrode 400 is greater than 5 nm.
In a further embodiment, the vertical thickness of the gallium oxide layer 200 between two adjacent legs of the same electrode is greater than 5 nm.
In a further embodiment, each of the plurality of electrode sublayers has a thickness of less than 200 nm.
In further embodiments, the material of the first electrode 300 and/or the second electrode 400 is one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, or ITO.
Another aspect of the present disclosure provides a method for manufacturing a gallium oxide photodetector, including: s1, growing a gallium oxide layer 200 on the substrate 100; s2, growing a branch layer of the first electrode 300 and/or the second electrode 400 on the gallium oxide layer 200; s3, a gallium oxide layer 200 and a support layer of the first electrode 300 and/or the second electrode 400 are repeatedly grown until the total thickness of the gallium oxide layer 200 reaches a predetermined thickness.
In a further embodiment, the predetermined thickness is greater than 20 nm.
In a further embodiment, the spacing between the first electrode 300 and the second electrode 400 is greater than 5 nm.
(III) advantageous effects
The electrode of the gallium oxide photoelectric detector is buried in the gallium oxide, when bias voltage is applied, an electric field is uniformly distributed in the whole gallium oxide body instead of being concentrated on the surface, so that photon-generated carriers generated in a region far away from the surface can be collected, and the quantum efficiency and the responsivity of the photoelectric detector are improved; meanwhile, most of photo-generated current is conducted in a region far away from the surface, so that the influence of surface defects on the performance of the device is reduced, and the parameters of the device, such as response speed, linear response range and the like, are improved.
Drawings
Fig. 1 schematically illustrates a structural schematic of a gallium oxide photodetector according to an embodiment of the present disclosure;
fig. 2 schematically illustrates a step diagram of a method of fabricating a gallium oxide photodetector according to an embodiment of the present disclosure.
Detailed Description
According to the gallium oxide photoelectric detector, the electrodes are embedded into the gallium oxide through the growing gallium oxide and electrode period overlapping structure, the vertical interdigital structure can provide an electric field deep into the gallium oxide, all photo-generated carriers generated in the gallium oxide are fully collected, the influence of the defects on the surface of the device on the performance of the device is reduced, and the performance parameters of the device, such as the responsivity, the response speed and the like, are improved.
The gallium oxide photodetector in the present application, as shown in fig. 1, includes a substrate 100, a gallium oxide layer 200, a first electrode 300, and a second electrode 400, wherein the gallium oxide layer 200 is disposed on a surface of the substrate 100; the first electrode 300 is not in contact with the second electrode 400, the first electrode 300 and the second electrode 400 both comprise a plurality of support layers, one ends of the support layers are embedded in the inner part and the surface of the gallium oxide layer 200, and the other ends of the support layers are connected with the outer part of the gallium oxide layer 200.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
The substrate 100 is an insulating material and may be cleaned, polished, etc. before the gallium oxide layer 200 is disposed thereon.
The gallium oxide layer 200 is provided on the substrate 100, and has a total thickness of more than 20 nm.
The first electrode 300 and the second electrode 400 are spaced apart from each other and do not contact each other, and the distance between the first electrode 300 and the second electrode 400 is greater than 5 nm. The first electrode 300 and the second electrode 400 both comprise a plurality of branch layers, one end of each branch layer of the first electrode 300 is embedded in the gallium oxide layer 200 and on the surface of the gallium oxide layer, and the other ends of the branch layers are mutually connected to the outside of the gallium oxide layer 200; similarly, one end of each of the plurality of branch layers of the second electrode 400 is embedded in the gallium oxide layer 200 and the surface thereof, and the other ends thereof are connected to the outside of the gallium oxide layer 200. The other ends of the plurality of branch layers are connected to each other and extend to the surface of the substrate 100. The shape of the branch layer is not limited, and may be rectangular, semicircular, interdigital, or the like. The shape of each layer in the plurality of branch layers can be the same or different, the thickness can be the same or different, and the thickness of each layer is less than 200 nm. The plurality of branch layers of the first electrode 300 correspond to the plurality of branch layers of the second electrode one-to-one, and as shown in fig. 1, the two corresponding branch layers are located at the same thickness of the gallium oxide layer 200.
The material of the first electrode 300 may be one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, or ITO. The material of the second electrode 400 may be one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN, or ITO. The material of the first electrode 300 and the material of the second electrode 400 are preferably the same.
The total thickness of the gallium oxide layer 200 is greater than 20 nm.
In another aspect, the present disclosure provides a method for manufacturing a gallium oxide photodetector, as shown in fig. 2, including:
s1, growing a gallium oxide layer 200 on the substrate 100;
the substrate 100 is first subjected to a pretreatment such as cleaning and polishing. And then photoetching is carried out on the substrate to manufacture the shape of the gallium oxide layer 200, then a layer of gallium oxide layer 200 grows, and the photoresist is removed.
S2, growing a branch layer of the first electrode 300 and/or the second electrode 400 on the gallium oxide layer 200;
a photoresist is spin-coated on the gallium oxide layer 200, and then photolithography is performed and the first electrode 300 and/or the second electrode 400 are grown, and the photoresist is removed. The spacing between the first electrode 300 and the second electrode 400 is greater than 5 nm.
S3, a gallium oxide layer 200 and a support layer of the first electrode 300 and/or the second electrode 400 are repeatedly grown until the total thickness of the gallium oxide layer 200 reaches a predetermined thickness.
The predetermined thickness is greater than 20 nm.
In summary, the electrode of the gallium oxide photodetector in the present application is buried inside gallium oxide, and when a bias voltage is applied, the electric field is uniformly distributed in the whole gallium oxide body, rather than being concentrated on the surface, so that the photogenerated carriers generated in the region far from the surface can also be collected, and the quantum efficiency and responsivity of the photodetector are increased; meanwhile, most of photo-generated current is conducted in a region far away from the surface, so that the influence of surface defects on the performance of the device is reduced, and the parameters of the device, such as response speed, linear response range and the like, are improved.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A gallium oxide photodetector, comprising:
a substrate (100);
a gallium oxide layer (200) provided on the surface of the substrate (100);
first electrode (300) and second electrode (400), first electrode (300) and second electrode (400) contactless, first electrode (300) and second electrode (400) all include a plurality of layers of propping up, and a plurality of one end of propping up the layer is inlayed in the inside and the surface of gallium oxide layer (200), other end interconnect in the outside of gallium oxide layer (200).
2. A gallium oxide photodetector according to claim 1, the other ends of said plurality of branch layers being connected to each other and extending to the surface of said substrate (100).
3. The gallium oxide photodetector of claim 1, wherein the plurality of branch layers of the first electrode (300) correspond one-to-one with the plurality of branch layers of the second electrode (400).
4. A gallium oxide photodetector according to claim 1, the spacing between the first electrode (300) and the second electrode (400) being greater than 5 nm.
5. A gallium oxide photodetector according to claim 1, the gallium oxide layer (200) between two adjacent limbs of the same electrode having a vertical thickness greater than 5 nm.
6. The gallium oxide photodetector of claim 1, wherein each of the plurality of sub-layers of the electrode has a thickness of less than 200 nm.
7. Gallium oxide photodetector according to claim 1, the material of said first (300) and/or second (400) electrode being one or more of Ti, Cr, Ni, Pt, Au, Ag, W, In, Al, Ru, Pd, TiN, Ta, TaN or ITO.
8. A method for preparing a gallium oxide photodetector comprises the following steps:
s1, growing a gallium oxide layer (200) on the substrate (100);
s2, growing a branch layer of the first electrode (300) and/or the second electrode (400) on the gallium oxide layer (200);
And S3, repeatedly growing a gallium oxide layer (200) and a branch layer of the first electrode (300) and/or the second electrode (400) until the total thickness of the gallium oxide layer (200) reaches a preset thickness.
9. The method of claim 8, wherein the predetermined thickness is greater than 20 nm.
10. The method of claim 8, wherein the first electrode (300) and the second electrode (400) are spaced apart by more than 5 nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122171A (en) * | 2021-11-29 | 2022-03-01 | 西安邮电大学 | Gallium oxide based solar blind ultraviolet light intensity detector and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204424268U (en) * | 2015-01-17 | 2015-06-24 | 王宏兴 | A kind of three-diemsnional electrode structure of semiconductor device |
| CN104752532A (en) * | 2015-01-17 | 2015-07-01 | 王宏兴 | Three-dimensional electrode structure of semiconductor device as well as preparation method and application of three-dimensional electrode structure |
| CN110707209A (en) * | 2019-09-03 | 2020-01-17 | 华中科技大学 | Three-dimensional stacked phase change memory and preparation method thereof |
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- 2020-07-21 CN CN202010707827.1A patent/CN111863979B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204424268U (en) * | 2015-01-17 | 2015-06-24 | 王宏兴 | A kind of three-diemsnional electrode structure of semiconductor device |
| CN104752532A (en) * | 2015-01-17 | 2015-07-01 | 王宏兴 | Three-dimensional electrode structure of semiconductor device as well as preparation method and application of three-dimensional electrode structure |
| CN110707209A (en) * | 2019-09-03 | 2020-01-17 | 华中科技大学 | Three-dimensional stacked phase change memory and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122171A (en) * | 2021-11-29 | 2022-03-01 | 西安邮电大学 | Gallium oxide based solar blind ultraviolet light intensity detector and preparation method thereof |
| CN114122171B (en) * | 2021-11-29 | 2023-07-28 | 西安邮电大学 | Gallium oxide-based solar blind ultraviolet intensity detector and preparation method thereof |
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