CN204424268U - A kind of three-diemsnional electrode structure of semiconductor device - Google Patents
A kind of three-diemsnional electrode structure of semiconductor device Download PDFInfo
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Abstract
The utility model discloses a kind of three-diemsnional electrode structure of semiconductor device, comprise single-crystal diamond wafer material, single-crystal diamond wafer material is provided with two metal electrode pad respectively as positive pole and negative pole, each metal electrode pad all connects the interdigital electrode that one or more equi-spaced apart is arranged, and each interdigital electrode is all connected with and is one or morely parallel to each other and is arranged on the cylindrical metal electrode in single-crystal diamond wafer material.In conjunction with the advantage of planar electrode structure and vertical electrode structure, in single-crystal diamond wafer, introduce body electrode, realize the efficient quick collection of the electron-hole pair that ultraviolet light or the particle beams excite, improve response time and the sensitivity of detector; The complexity of single-crystal diamond wafer surface can be avoided simultaneously, add the stability of device; And improve the anti-radiation performance of particle detector.
Description
Technical field
The utility model belongs to technical field of photoelectric detection, relates to a kind of three-diemsnional electrode structure of semiconductor device.
Background technology
Ultraviolet photoelectric survey technology is a kind of very important technology, can be widely used in the fields such as space fire defector, smog alarm, space communication.Because operational environment is complicated severe, therefore very high to the material requirements of detector.Diamond is as a kind of wide bandgap semiconductor, and cut-off wavelength, in 225 nanometers, has natural visible ray optical filtering, very applicablely prepares solar blind ultraviolet detector.Meanwhile, diamond has a lot of excellent performance, and its thermal conductivity is high, Heat stability is good, and chemical stability is good, has good anti-radiation performance.These all make diamond have huge advantage in ultraviolet detector field.
Many people are had to be studied diamond UV photodetector at present.But, traditional diamond UV photodetector electrode structure mainly copline interdigitated electrode structure and vertical sandwich structure.Concerning vertical stratification, field uniformity is good, is conducive to the drift motion of photo-generated carrier, make sensitivity and collection efficiency higher.Because ultraviolet light penetration depth in diamond is limited, so it is very thin to need diamond thin to accomplish, and nucleation planar defect density is the least possible, like this, photo-generate electron-hole is to just can compound as few as possible in interelectrode Drift Process, thus make the charge carrier arriving electrode place many, contribute large to charge collection efficiency and sensitivity.But for diamond epitaxial film and self-supporting mono-crystal diamond film, integral thickness is thicker, to the drift of charge carrier and collect unfavorable.
Copline interdigitated electrode structure is the improvement to vertical sandwich structure.Because ultraviolet light penetration depth in diamond film is smaller, mainly concentrates on surface, therefore on diamond surface, prepare interdigital electrode, the photo-generate electron-hole pair of near surface can be collected preferably.Because ultraviolet light is decayed rapidly in the material, after penetrating certain depth, very little to the contribution of electric current, therefore the collection efficiency of interdigital electrode is also higher.And interdigital electrode is interlaced, detector useful detection area is increased, has very large contribution to the responsiveness of detector.But the field uniformity of interdigital electrode is not as vertical stratification, and when uv power is larger, the uneven of Electric Field Distribution will have an impact in the collection right to photo-generate electron-hole.
Particel Detection Methods are also very important technology at nuclear technology field.Diamond has good anti-radiation performance, still can the normal operation of retainer member under irradiation.Diamond also has very high thermal conductivity, and the heat in being tested by high energy particle passes to away timely and effectively.Meanwhile, adamantine dielectric coefficient is little, under irradiation, the noise current of device can not change, thus makes device have very high resolving power, and this is just required for particle detector.
Because the energy of particle is very high, stronger than the effect of ultraviolet light with adamantine interaction, so the structure of diamond particles detector is vertical electrode structure, namely sandwich structure.Early stage diamond particles detector is material with polycrystalline diamond films, belongs to the heteroepitaxy on silicon, and diamond is very simple with being separated of silicon, adopts sandwich structure to be substantially in uniform diamond thin.However, be subject to the impact of polycrystalline diamond crystal boundary, defect etc., this structure also exists the problems such as the acquisition time of charge carrier is long and collection efficiency is low.
Along with the breakthrough of CVD single-crystal diamond growth technology, on research steering to diamond particles detector single-crystal diamond film, existingly be applied to the single-crystal diamond epitaxially grown layer comprising single-crystal diamond substrate, be also applied to self-supporting mono-crystal diamond film.Now, there is the problem identical with diamond UV photodetector.When diamond particles detector adopts sandwich structure, have that useful detection area is few, carrier drift path length and the problem such as collection efficiency is low.When adopting coplanar structure, because the energy of high energy particle is high, penetration depth is large, and the uneven distribution of electric field is also large on device performance impact.
Utility model content
The purpose of this utility model is to provide a kind of three-diemsnional electrode structure of semiconductor device, when adopting vertical sandwich electrode structure to solve, useful detection area is little, the carrier collection time is long and collection efficiency is low, the problem that during employing copline interdigitated electrode structure, field uniformity is not good.
The three-diemsnional electrode structure of the utility model semiconductor device, comprise single-crystal diamond wafer material, single-crystal diamond wafer material is provided with two metal electrode pad respectively as positive pole and negative pole, each metal electrode pad all connects the interdigital electrode that one or more equi-spaced apart is arranged, and each interdigital electrode is all connected with and is one or morely parallel to each other and is arranged on the cylindrical metal electrode in single-crystal diamond wafer material.
Further, cylindrical metal electrode runs through the setting of single-crystal diamond wafer material or only extends certain depth setting.
Further, cylindrical metal electrode is for vertically arranging or being obliquely installed.
Further, each interdigital electrode is parallel pole or annular electrode, and each interdigital electrode is positioned at surface or the inside of single-crystal diamond wafer material.
Further, between metal electrode pad and interdigital electrode be bridge joint mode or directly cover type connection.
Further, the material of metal electrode pad, interdigital electrode and cylindrical metal electrode is identical or different, but all requires as forming the metal of ohmic contact with diamond or can form the metal of conductive carbide with diamond.
Further, single-crystal diamond wafer material is self-supporting mono-crystal diamond film, or comprises the single-crystal diamond epitaxial loayer of single-crystal diamond substrate.
Further, the shape of single-crystal diamond wafer material is rectangle, circle, ellipse or other shapes, and two metal electrode pad are arranged on the side of single-crystal diamond wafer material, end face or bottom surface and for coplanar or antarafacial are arranged between two metal electrode pad.
Further, ohmic contact is formed by annealing between each cylindrical metal electrode and single-crystal diamond wafer material.
The beneficial effects of the utility model are, in conjunction with the advantage of planar electrode structure and vertical electrode structure, at self-supporting mono-crystal diamond film, or the single-crystal diamond epitaxial loayer comprising single-crystal diamond wafer substrates is interior introduces body electrode, realize efficient, the quick collection of the electron-hole pair that ultraviolet light or the particle beams excite, thus improve response time and the sensitivity of detector.Meanwhile, adopt body electrode structure, the complexity of single-crystal diamond wafer surface can be avoided, the stability of device can be increased.Further, concerning particle detector, anti-radiation performance can also be improved.
Accompanying drawing explanation
The structural representation of Fig. 1 to be the three-diemsnional electrode structural material of a kind of semiconductor device of the utility model be single-crystal diamond substrate and its epitaxial growth film;
The structural representation of Fig. 2 to be the three-diemsnional electrode structured substrate of a kind of semiconductor device of the utility model be self-support type single-crystal diamond film;
Fig. 3 is that in Fig. 1, metal electrode pad is the structural representation that antarafacial is arranged;
Fig. 4 is that in Fig. 2, metal electrode pad is the structural representation that antarafacial is arranged;
Fig. 5 is the structural representation that in Fig. 2, metal electrode pad is arranged on side;
Fig. 6 is the structural representation that in Fig. 1, column metal electrode is obliquely installed;
Fig. 7 is the utility model interdigital electrode is annular structural representation;
Fig. 8 a and Fig. 8 b is the schematic diagram of three-dimension hole array approach in the preparation method of the three-diemsnional electrode structure of the utility model semiconductor device;
Fig. 9 a to Fig. 9 d is the schematic diagram of three kinds of three-dimension hole penetration depths in the preparation method of the three-diemsnional electrode structure of the utility model semiconductor device;
Figure 10 a to Figure 10 b is the metal filled schematic diagram formed with surface electrode of evaporation coating in the preparation method of the three-diemsnional electrode structure of the utility model semiconductor device;
Figure 11 a to Figure 11 d is that in the preparation method of the three-diemsnional electrode structure of the utility model semiconductor device, flow of molten metal fills the schematic diagram formed with surface electrode.
In figure, 1. metal electrode pad, 2. interdigital electrode, 3. cylindrical metal electrode, 4. self-support type single-crystal diamond film, 5. single-crystal diamond substrate, 6. single-crystal diamond epitaxial growth film, 7. fill metal, 8. flow of molten metal, 9. oxygen plasma, 10. mask.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail.
The utility model provides a kind of three-diemsnional electrode structure of semiconductor device, comprise single-crystal diamond wafer material, single-crystal diamond wafer material is provided with two metal electrode pad1 respectively as positive pole and negative pole, each metal electrode pad1 all connects the interdigital electrode 2 that one or more equi-spaced apart is arranged, each interdigital electrode 2 being all connected with and being one or morely parallel to each other and being arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer material, between each cylindrical metal electrode 3 and single-crystal diamond wafer material, forming ohmic contact by annealing.
The utility model, on single-crystal diamond wafer material, by plasma etching technology, processes three-dimensional parallel hole array, then utilizes metal-filled holes array, forms said three-dimensional body electrode.In single-crystal diamond wafer surface or body, by interdigital electrode, these said three-dimensional body electrodes are interconnected, form a kind of three-diemsnional electrode structure of semiconductor device.
Single-crystal diamond wafer material is self-supporting mono-crystal diamond film, or comprises the single-crystal diamond epitaxial film of single-crystal diamond substrate.The shape of single-crystal diamond wafer material is rectangle, circle, ellipse or other shapes.
Wherein, cylindrical metal electrode 3 runs through the setting of single-crystal diamond wafer material or only extends certain depth setting.The position of cylindrical metal electrode 3, can only in epitaxial loayer, or extend in substrate, can also run through substrate.Same, also in free-standing diamond film, also can run through free-standing diamond film.
Cylindrical metal electrode 3 is for vertically arranging or being obliquely installed, cylindrical metal electrode 3 is not limited only to vertical single-crystal diamond wafer material surface, also can be form certain angular slope arrange with single-crystal diamond wafer material surface, but will meet between cylindrical metal electrode 3 and be parallel to each other.The shape of cylindrical metal electrode 3 can be the arbitrary shape such as cylinder, square column.
Interdigital electrode 2 is parallel pole or annular electrode; And each interdigital electrode 2 is positioned at surface or the inside of single-crystal diamond wafer material.Namely interdigital electrode 2 can also be accomplished in substrate body, and interdigital electrode 2 can realize in extension single crystal diamond layer, also can be applied to multiple wafer shape, various metals electrode pad mode.Do not contact between the both positive and negative polarity that only need ensure interdigital electrode 2, and must spaced set between interdigital electrode 2, to ensure the uniformity of electric field.Can not in same plane between interdigital electrode 2.
Interdigital electrode 2 and cylindrical metal electrode 3 are relations one to one, and the cylindrical metal electrod-array of an organ timbering shape metal electrode 3 or one group of annular array, must connect by an interdigital electrode 2.Cylindrical metal electrode 3 array is positive and negative spaced compound array, and quantity is at least two parallel or two donut arrays, to form both positive and negative polarity.
The material of metal electrode pad1, interdigital electrode 2 and cylindrical metal electrode 3 is identical or different, but all requires as forming the metal of ohmic contact with diamond or can form the metal of conductive carbide with diamond.Concrete, this metal material must meet one of following two bars: 1, can form ohmic contact with diamond, as Pd, Au; 2, conductive carbide can be formed with diamond, as Ti, W.In general, Pd and diamond adhesion good, Ti and diamond easily form the titanizing carbon of good conductive ability, are relatively conventional metal.
Two metal electrode pad1 can be arranged on the side of single-crystal diamond wafer material, end face or bottom surface and can arrange for coplanar or antarafacial between two metal electrode pad1.Concrete, metal electrode pad1 can be positioned at any position of single-crystal diamond wafer material, in side, bottom surface or in conjunction with upper surface and lower surface arrangement etc., the position of metal electrode pad1 is not limited in this, metal electrode pad1 and interdigital electrode 2 setting position needed can be selected as the case may be, as long as can be ensured to link together.Metal electrode pad1 is to the interdigital electrode 2 belonging to positive pole or negative pole be connected, generally there are two, divide positive and negative electrode, but its shape, position are without fixing, can various ways be had, such as circle, rectangle, polygon etc., can in upper and lower surface, also in side, can also upper and lower surface can be combined with side.
The connection of metal electrode pad1 and interdigital electrode 2 can be directly covered the one end of the interdigital electrode 2 belonging to positive pole or negative pole to link together, also can be bridge joint, namely belong to adjacent two of positive pole or negative pole together to refer to adopt bridge joint mode between electrodes, stride across the interdigital electrode bar of not homopolarity, need to ensure to disconnect between both positive and negative polarity.
Embodiment 1
As Fig. 1, a kind of three-diemsnional electrode structure of semiconductor device, the single-crystal diamond substrate 5 of single-crystal diamond epitaxial growth film 6 is had for material with rectangle growth, two metal electrode pad1 of positive pole and negative pole are set on the surface at this epitaxial film, two metal electrode pad1 all connect the interdigital electrode 2 that two equi-spaced apart are vertically arranged, and each interdigital electrode 2 are all connected with multiplely be parallel to each other and be arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer.Interdigital electrode 2 is straight bar shape parallel pole, and cylindrical metal electrode is vertically arrange.
Embodiment 2
As Fig. 2, a kind of three-diemsnional electrode structure of semiconductor device, be single-crystal diamond wafer material with rectangle self-supporting mono-crystal diamond film 4, this same surface of self-supporting mono-crystal diamond film 4 arranges two metal electrode pad1 respectively as positive pole and negative pole, two metal electrode pad1 all connect the interdigital electrode 2 that multiple equi-spaced apart is arranged, and each interdigital electrode 2 are all connected with multiplely be parallel to each other and be arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer.Interdigital electrode 2 is straight bar shape parallel pole, and cylindrical metal electrode is vertically arrange.
Embodiment 3
As Fig. 3, a kind of three-diemsnional electrode structure of semiconductor device, the single-crystal diamond substrate 5 of single-crystal diamond epitaxial growth film 6 is had for material with growth, at this epitaxial film upper surface and lower surface antarafacial, positive pole and negative metal electrode pad1 are set, two metal electrode pad1 all connect the interdigital electrode 2 that two equi-spaced apart are arranged, and each interdigital electrode 2 are all connected with multiplely be parallel to each other and be arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer.
Embodiment 4
As Fig. 4, a kind of three-diemsnional electrode structure of semiconductor device, with self-supporting mono-crystal diamond film 4 for material, surface and lower surface antarafacial arrange positive pole and negative metal electrode pad1 on the material, two metal electrode pad1 all connect the interdigital electrode 2 that two equi-spaced apart are arranged, and each interdigital electrode 2 are all connected with multiplely be parallel to each other and be arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer.
Embodiment 5
As Fig. 5, a kind of three-diemsnional electrode structure of semiconductor device, with self-supporting mono-crystal diamond film 4 for material, in the two opposite side surfaces of this material, antarafacial arranges positive pole and negative metal electrode pad1, two metal electrode pad1 all connect the interdigital electrode 2 of two equi-spaced apart settings, interdigital electrode 2 is positioned on two other apparent surface of self-supporting mono-crystal diamond film 4, each interdigital electrode 2 is all connected with multiplely be parallel to each other and be arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer.
Embodiment 6
As Fig. 6, a kind of three-diemsnional electrode structure of semiconductor device, the single crystal diamond material 5 of single-crystal diamond epitaxial growth film 6 is had for material with growth, two metal electrode pad1 of positive pole and negative pole are set on the surface at this single-crystal diamond epitaxial growth film 6, two metal electrode pad1 all connect the interdigital electrode 2 that two equi-spaced apart are arranged, and each interdigital electrode 2 are all connected with multiplely to be obliquely installed, to be parallel to each other and to be arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer.
Embodiment 7
As Fig. 7, a kind of three-diemsnional electrode structure of semiconductor device, with the single-crystal diamond epitaxial film 6 of single-crystal diamond substrate for material, two metal electrode pad1 of positive pole and negative pole are set on the wafer surface, two metal electrode pad1 all connect the annular interdigital electrode 2 that multiple equi-spaced apart is arranged, and each interdigital electrode 2 are all connected with multiplely be parallel to each other and be arranged on the cylindrical metal electrode 3 in single-crystal diamond wafer.
The three-diemsnional electrode structure of above-mentioned semiconductor device is applied to on the single-crystal diamond wafer UV photodetector that is material and particle detector.Wherein, single-crystal diamond wafer is that material comprises the single-crystal diamond epitaxial loayer and self-supporting mono-crystal diamond film that comprise single-crystal diamond substrate.Epitaxial loayer is for utilizing microwave plasma CVD MPCVD homoepitaxy monocrystalline diamond film, and substrate is I b or the II a type of single-crystal diamond, Ib and IIa is the type mark of single-crystal diamond, depends on impurity content in crystal.
The preparation method of the three-diemsnional electrode structure of above-mentioned semiconductor device, comprises the following steps:
Step 1, employing Etching Technologies of Diamond etch three-dimension hole array on single-crystal diamond wafer material;
Step 2, form cylindrical metal electrode 3 by metal filled each three-dimension hole, carry out annealing in process;
Step 3, again the three-dimension hole of correspondence to be connected with metal electrode pad by interdigital electrode 2.
Namely on the single-crystal diamond epitaxial loayer comprising single-crystal diamond substrate at single-crystal diamond wafer or free-standing diamond film, three-dimensional micro-channel array structure is gone out by oxygen plasma etch, then the melting filling technique etc. after adopting thermal resistance evaporation coating technique, magnetron sputtering technology or electron beam evaporation deposition technology, flow of molten metal backfill technology and nano metal powder to fill, metal is filled up aperture, and forms cylindrical metal electrode 3.Then by annealing process, improve metal and diamond interface performance, form good ohmic contact.Adopt standard photolithography process, process interdigital electrode 2 and metal electrode pad1, cylindrical metal electrode 3 is connected, form a kind of three-diemsnional electrode structure of semiconductor device.
One, single-crystal diamond wafer material is prepared
The concrete grammar preparing epitaxy single-crystal diamond wafer is, single-crystal diamond epitaxial loayer is by MPCVD technology, obtains at single-crystal diamond I b and II a Grown.For UV photodetector, thickness can be accomplished very thin, about hundreds of nanometer.For particle detector, the thickness of epitaxial loayer needs tens microns, even hundreds of micron.Because the epitaxial diamond layer surface just grown is hydrogen terminal, be not suitable for preparing detector, therefore need to process diamond sample, adopt the processing method of typical concentrated acid process or UV light combined ozone can get rid of the hydrogen terminal on surface.
The concrete grammar preparing self-supporting mono-crystal diamond film wafer is, by MPCVD technology, first at single-crystal diamond I b and II a Grown one deck single-crystal diamond thick film, thickness is hundreds of micron, then adopt ion implantation or femtosecond laser to add that electrochemical etching method strips down, form self-supporting mono-crystal diamond film.Through grinding, make this self-supporting mono-crystal diamond film surfacing.And also by concentrated acid process, remove hydrogen terminal and non-diamond phase.
Two, the formation of three-dimension hole array
The processing of three-dimension hole array needs to use adamantine lithographic technique.Adamantine etching is generally etch in oxygen plasma, and can insert carbon tetrafluoride in atmosphere, improves etch rate and smoothness.About this lithographic technique, there is RIE lithographic technique, ICP lithographic technique etc.Here for oxygen plasma.On single-crystal diamond wafer, utilize photoetching technique to form circular array pattern, mask is photoresist, then use RIE technology, etch three-dimensional channel array under oxygen plasma environment, etching power is 100W-300W, oxygen flow 30-60sccm, pressure is 4-10Pa.By controlling etch period, the aperture of different depth can be etched.Only concerning single-crystal diamond epitaxial loayer, the penetration depth of aperture can be in epitaxial loayer, penetrates in epitaxial loayer to substrate and run through substrate three kinds.For self-supporting mono-crystal diamond film, then comprise in free-standing diamond film and run through free-standing diamond film two kinds.
As shown in Figure 8, penetration depth is as shown in Figure 9 in epitaxial loayer for aperture for machining sketch chart.In Fig. 8, Fig. 8 a and Fig. 8 b is the schematic diagram of three-dimension hole array approach.In Fig. 9, Fig. 9 a is the aperture being positioned at epitaxial loayer, and Fig. 9 b is the aperture be penetrated in substrate, and Fig. 9 c is through hole, and Fig. 9 d is the vertical view of array of orifices.
Three, metal filled and Electrode connection
Metal filledly directly can adopt the mode of evaporation coating or the mode of sputter coating, or utilize flow of molten metal to fill and powder fill after melting fill method.
Utilize the mode of evaporation coating, be complete metal filled and mode that is Electrode connection simultaneously.After etching array of orifices, remove photoresist, then by alignment, form the interdigital electrode pattern connecting aperture.Then metal on evaporation, can fill aperture, can complete again the preparation of interdigital connecting electrode.The electrode that Figure 10 illustrates evaporation coating is filled and connection procedure.In Figure 10, Figure 10 a is metallic film deposition schematic diagram, and Figure 10 b removes photoresist schematic diagram, and Figure 10 c is surface electrode connection diagram.
It is separately made by metal filled and interdigital connecting electrode that rule is filled in melting after utilizing flow of molten metal filling and powder to fill.For flow of molten metal, after etching array of orifices, be placed in vacuum environment, directly flow of molten metal spread on whole diamond surface, realize the filling of aperture.Melting completion method after filling for powder, be then first be filled in aperture by nano-metal particle, then heat, metallic particles is melted, and forms flow of molten metal, realizes filling.After end-of-fill, the top of metal post-shaped electrode and diamond surface are in same plane, and independent each other, this just needs to prepare interdigital electrode again and connects.The preparation of interdigital electrode just with evaporation coating mode in similar, make figure by lithography, metal in evaporation, then remove photoresist, electrode has just been prepared.The electrode that Figure 11 illustrates motlten metal backfill method is filled and connection procedure.When aperture runs through diamond substrate, the connection of electrode can also adopt antarafacial interdigital electrode to connect.In Figure 11, Figure 11 a is that flow of molten metal fills schematic diagram, and Figure 11 b removes mask and the schematic diagram of planarization, and Figure 11 c is surface metal film preparation schematic diagram, and Figure 11 d is the schematic diagram removing mask electrode moulding.
Four, metal-diamond interface annealing
For diamond UV photodetector and particle detector, what metal and diamond contact generally adopted is ohmic contact.In order to form good ohmic contact, there are two kinds of methods.
The first is the metal that selection work function and diamond gap are less, and such as Au and Pd, after completing the filling of metal, carries out annealing in process to device, improves metal and adamantine contact performance.
The second utilizes metal and C to form carbide, as Ti.In melting completion method after flow of molten metal and powder are filled, metal is nano-metal particle, comprises Nanometer Copper, nanometer tin and nano-sized carbon etc.Complete metal filled after, be still and annealing in process carried out to device, make Ti and C interface form titanium carbide, thus realize ohmic contact.
Embodiment 8
A kind of three-diemsnional electrode structure of semiconductor device is applied in detector:
The Ib single-crystal diamond that substrate selects high temperature and high pressure method to make, is of a size of 3 × 3 × 0.3mm.By MPCVD method, be the monocrystalline diamond film of 1 μm in substrate Epitaxial growth a layer thickness.Carry out CL, Raman test and light microscope surface observation to epitaxial loayer, CL spectrum is presented at 235 nm has obvious peak value and without other spuious peaks, Raman halfwidth is about 2/cm, surfacing, represents that monocrystalline diamond film quality is high.
After outer layer growth terminates, by photoetching technique, form array of circular apertures at diamond surface, mask directly utilizes photoresist, and no longer extra does mask with metal.Circular hole wide diameter is 10 μm, and hole center distance is 40 μm.The diamond sample that photoetching is good is placed in reactive ion etching machine, utilizes oxygen plasma etch.Oxygen flow is 40sccm, and etching power is 200W, and etch period is 3min.After etching terminates, remove photoresist.Be 120nm to the depth test of aperture.
Next, remove photoresist, again utilize photoetching technique, again form interdigital electrode pattern at diamond surface.Interdigital electrode finger beam is 20 μm, refers to that spacing is 20 μm, and refer to that length is 600 μm, interdigital electrode bar covers all apertures.Adopt the mode plating of electron beam evaporation, be respectively Ti/Al/Ni/Au, each layer thickness is respectively 20nm, 160nm, 120nm, 120nm.After evaporation terminates, remove photoresist, surface electrode structure is complete.
Finally, anneal to form ohmic contact to sample.Anneal 30min under Ar gas atmosphere, 600 DEG C of conditions.Naturally, after cooling, carry out voltage-current characteristic test to sample, gained characteristic is ohmic contact characteristic.
Adopt three-dimensional column electrode structure can in conjunction with the good advantage of the highly sensitive and vertical electrode structure field uniformity of copline interdigitated electrode structure.In single-crystal diamond film body, introduce electric field, the uneven surface field of script evenly can be advanced in body, realize the lateral collection of charge carrier.Now, can electrode spacing be done smaller, thus be similar to vertical stratification.Ultraviolet light incides in adamantine path, and photo-generate electron-hole is to being collected by internal electrode rapidly, and the electron-hole pair collected is more, can improve responsiveness and the response time of detector.Utilize plasma etching technology to etch three-dimension hole array, the backfill of recycling metal, and adopt interdigital electrode to be interconnected, reasonable three-dimensional cylindrical metal electrode structure can be prepared.
Radiation impedance is an important parameter of particle detector.Although diamond has excellent anti-radiation performance, when being applied to particle detector, along with the prolongation of time, due to the existence of the phenomenon such as irradiation damage and polarization, collection efficiency still can be made also to decline.Therefore, three-diemsnional electrode structure can be adopted, shorten carrier collection path, increase electric field to the control ability of device, thus improve the performance of device.
For the making of cylindrical metal electrode, the modes such as particle beams injection, laser processing can be had.Particle beams injection mode is in electrode part doping, and realize conductive capability, but diamond is difficult to realize highly doped, and cost is very high, foreign atom also can destroy diamond lattice in addition, and in Detector for High Energy Particles, its electrode can be affected.For laser processing, be after electrode part is become graphite, graphite differs comparatively large with adamantine lattice constant, can produce stress in both interfaces, this also has impact to device performance.Therefore, adopt plasma selective etch to go out aperture, and utilize metal to backfill, form metal post-shaped electrode, then annealing improves metal and adamantine contact performance, is a kind of reasonable electrode fabrication mode.
Claims (9)
1. the three-diemsnional electrode structure of a semiconductor device, it is characterized in that, comprise single-crystal diamond wafer material, described single-crystal diamond wafer material is provided with two metal electrode pad (1) respectively as positive pole and negative pole, described each metal electrode pad (1) all connects the interdigital electrode (2) that one or more equi-spaced apart is arranged, and described each interdigital electrode (2) is all connected with and is one or morely parallel to each other and is arranged on the cylindrical metal electrode (3) in described single-crystal diamond wafer material.
2. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 1, is characterized in that, described cylindrical metal electrode (3) is run through described single-crystal diamond wafer material and arranged or only extend certain depth setting.
3. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 1 or 2, is characterized in that, described cylindrical metal electrode (3) is for vertically arranging or being obliquely installed.
4. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 1 or 2, it is characterized in that, described each interdigital electrode (2) is parallel pole or annular electrode, and described each interdigital electrode (2) is positioned at surface or the inside of described single-crystal diamond wafer material.
5. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 4, is characterized in that, is bridge joint mode or directly cover type connection between described metal electrode pad (1) and interdigital electrode (2).
6. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 1 or 2, it is characterized in that, the material of described metal electrode pad (1), interdigital electrode (2) and cylindrical metal electrode (3) is identical or different, but all requires as forming the metal of ohmic contact with diamond or can form the metal of conductive carbide with diamond.
7. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 1 or 2, is characterized in that, described single-crystal diamond wafer material is self-supporting mono-crystal diamond film, or comprises the single-crystal diamond epitaxial loayer of single-crystal diamond wafer substrates.
8. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 1 or 2, it is characterized in that, the cross section of described single-crystal diamond wafer material is rectangle, circle, ellipse or other shapes, and described two metal electrode pad (1) are arranged on the side of described single-crystal diamond wafer material, end face or bottom surface and for coplanar or antarafacial are arranged between two metal electrode pad (1).
9. the three-diemsnional electrode structure of a kind of semiconductor device as claimed in claim 1 or 2, is characterized in that, forms ohmic contact between described each cylindrical metal electrode (3) and single-crystal diamond wafer material by annealing.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752532A (en) * | 2015-01-17 | 2015-07-01 | 王宏兴 | Three-dimensional electrode structure of semiconductor device as well as preparation method and application of three-dimensional electrode structure |
| CN106404919A (en) * | 2016-08-25 | 2017-02-15 | 中国科学院微电子研究所 | Surface acoustic wave sensor |
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| CN104752532A (en) * | 2015-01-17 | 2015-07-01 | 王宏兴 | Three-dimensional electrode structure of semiconductor device as well as preparation method and application of three-dimensional electrode structure |
| WO2016112773A1 (en) * | 2015-01-17 | 2016-07-21 | 西安交通大学 | Three-dimensional electrode structure of semiconductor device, manufacturing method and application thereof |
| CN106404919A (en) * | 2016-08-25 | 2017-02-15 | 中国科学院微电子研究所 | Surface acoustic wave sensor |
| CN111344109A (en) * | 2018-02-09 | 2020-06-26 | 六号元素(英国)有限公司 | Tool cutting element |
| CN110993684A (en) * | 2019-11-26 | 2020-04-10 | 西安电子科技大学 | High-power GaN quasi-vertical Schottky diode based on cathode and anode annular nesting and preparation method thereof |
| CN111244195A (en) * | 2020-01-16 | 2020-06-05 | 西安理工大学 | Micron-gap different-surface interdigital photoconductive switch |
| CN111244195B (en) * | 2020-01-16 | 2023-11-03 | 西安理工大学 | Micron-gap different-surface interdigital photoconductive switch |
| CN111863979A (en) * | 2020-07-21 | 2020-10-30 | 中国科学技术大学 | Gallium oxide photoelectric detector and preparation method thereof |
| CN111863979B (en) * | 2020-07-21 | 2022-07-15 | 中国科学技术大学 | Gallium oxide photoelectric detector and preparation method thereof |
| CN112670358A (en) * | 2020-12-23 | 2021-04-16 | 东南大学苏州研究院 | Diamond-based ultraviolet detector and preparation method thereof |
| CN113694364A (en) * | 2021-09-29 | 2021-11-26 | 广州市荔湾区骨伤科医院 | A Chinese medicinal fomentation bag with replaceable prescription and physiotherapy effect |
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