CN111863833A - Driving backboard structure, display panel and manufacturing method of driving backboard structure - Google Patents
Driving backboard structure, display panel and manufacturing method of driving backboard structure Download PDFInfo
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- CN111863833A CN111863833A CN201910364210.1A CN201910364210A CN111863833A CN 111863833 A CN111863833 A CN 111863833A CN 201910364210 A CN201910364210 A CN 201910364210A CN 111863833 A CN111863833 A CN 111863833A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims description 38
- 229910000679 solder Inorganic materials 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 89
- 238000010586 diagram Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
The invention provides a driving back plate structure, a display panel and a manufacturing method of the driving back plate structure, and solves the problem that the existing LTPS TFT circuit design is not favorable for display combined with a normally-installed LED and a reversely-installed LED. The method comprises the following steps: a first conductive lead structure and a second conductive lead structure within the driving backplane structure, the first conductive lead structure and the second conductive lead structure configured to be electrically connected with electrodes of an external display device; the first conductive lead structure and the second conductive lead structure are arranged in the same mould layer, and the projections of the first conductive lead structure and the second conductive lead structure on the surface of the driving backboard structure are mutually separated.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing technology and display, in particular to a driving back plate structure, a display panel and a manufacturing method of the driving back plate structure.
Background
Light-Emitting diodes (LEDs) are widely used in the display and communication fields due to their low power consumption, high luminance, low radiation to the human body, long lifetime, and other characteristics. In a Low Temperature Poly-silicon (LTPS) Thin Film Transistor (TFT) commonly used in OLED display, the second conductive lead structure signal line is usually different from the first conductive lead structure signal line. The P electrode and the N electrode of the forward LED and the inverted LED are arranged on the same side, and the existing LTPS TFT circuit design is not beneficial to being combined with the forward LED and the inverted LED for display.
Disclosure of Invention
In view of the above, the invention provides a driving back plate structure, a display panel and a manufacturing method of the driving back plate structure, and solves the problem that the existing LTPS TFT circuit design is not favorable for display combined with a front-mounted LED and a flip LED.
An embodiment of the invention provides a driving backboard structure and a manufacturing method thereof, wherein the driving backboard structure comprises: a first conductive lead structure and a second conductive lead structure within the driving backplane structure, the first conductive lead structure and the second conductive lead structure configured to be electrically connected with electrodes of an external display device; the first conductive lead structure and the second conductive lead structure are arranged in the same mould layer, and the projections of the first conductive lead structure and the second conductive lead structure on the surface of the driving backboard structure are mutually separated.
In one embodiment, the mold layer comprises: a passivation layer; and an insulating layer disposed under the passivation layer; wherein the first conductive lead structure is disposed between the passivation layer and the insulating layer and the second conductive lead structure is disposed between the passivation layer and the insulating layer or below the insulating layer.
In one embodiment, the second conductive lead structure is disposed between the passivation layer and the insulating layer, a first opening is disposed on a side of the passivation layer away from the insulating layer, the first opening is filled with solder, and the first conductive lead structure and the second conductive lead structure are respectively connected to the solder in the different first openings and electrically connected to an electrode of an external display device through the solder.
In one embodiment, the second conductive lead structure is disposed below the insulating layer, and further includes a metal layer, the metal layer is located between the passivation layer and the insulating layer, a first opening is disposed on a side of the passivation layer away from the insulating layer, the first opening is filled with solder, and the first conductive lead structure and the metal layer are respectively connected to the solder in different first openings and are electrically connected to an electrode of an external display device through the solder; and a second opening is formed in one side, close to the passivation layer, of the insulating layer, the metal layer is filled in the second opening, and the second conductive lead structure is connected with the metal layer in the second opening.
In one embodiment, the material of the passivation layer may be one or more of the following materials: silicon nitride, silicon oxide, rubber, and resin.
In one embodiment, the material of the solder is one or more of the following materials: indium and tin.
In one embodiment, the material of the first conductive lead structure and the second conductive lead structure may be one or more of the following materials: molybdenum, silver, titanium and aluminum.
In one embodiment, the insulating layer may be made of one or more of the following materials: silicon nitride and silicon oxide.
A display panel comprises the driving backboard structure and the LED chip structure, wherein a P electrode and an N electrode in the LED chip structure are positioned on the same side, and the P electrode and the N electrode are electrically connected with the first conductive lead structure and the second conductive lead structure in the driving backboard through solders.
A preparation method of a driving backboard structure comprises the steps of providing a mold layer; and preparing a first conductive lead structure and a second conductive lead structure in the mould layer, wherein the projections of the first conductive lead structure and the second conductive lead structure on the surface of the driving backboard structure are mutually separated.
The driving backboard structure comprises a first conductive lead structure and a second conductive lead structure, wherein the first conductive structure is used for being electrically connected with an anode of an external display device, and the second conductive lead structure is used for being connected with a cathode of the external display device. The first conductive lead structure and the second conductive lead structure are arranged inside the driving backboard structure, the first conductive lead structure and the second conductive lead structure are arranged in the same membrane layer of the driving backboard structure, and the projection of the second conductive lead structure on the surface of the driving backboard structure and the projection of the first conductive lead structure on the surface of the driving backboard structure are mutually separated. Above-mentioned drive backplate structure, because the second leads electrical structure and the first lead electrical structure that leads electrical structure and the first leads electrical structure that leads electrical structure and the second that leads electrical structure can be set up the homonymy on drive backplate structure surface, realized that the first leads electrical structure and the second that drive backplate structure lead electrical structure and external display device are connected, solved current LTPS TFT circuit design and be unfavorable for with the integrated problem of external display device.
Drawings
Fig. 1 is a schematic structural diagram of a driving backplane according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a driving backplate structure according to another embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the invention.
Fig. 4 is a schematic flow chart illustrating a manufacturing method of a driving backplane structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a driving backplane according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a driving backplate structure according to another embodiment of the present invention.
As shown in fig. 1 and 2, the driving backplane structure includes a first conductive lead structure 1 functioning to be electrically connected to an anode of an external display device and a second conductive lead structure 2 functioning to be connected to a cathode of the external display device. The first conductive lead structure 1 and the second conductive lead structure 2 are arranged inside the driving backboard structure, the first conductive lead structure 1 and the second conductive lead structure 2 are arranged in the same membrane layer of the driving backboard structure, and the projection of the second conductive lead structure 2 on the surface of the driving backboard structure and the projection of the first conductive lead structure 1 on the surface of the driving backboard structure are arranged in a mutually separated mode. Above-mentioned drive backplate structure, because the second electrically conducts the pin configuration 2 and the first electrically conducts the pin configuration 1 and does not overlap at the surperficial projection of drive backplate structure, and can set up the structure of the first electrically conducts pin configuration 1 and the electrically conducts the pin configuration of second in the homonymy on drive backplate structure surface, the problem that current LTPS TFT circuit design is unfavorable for connecting with external display device electricity and combine the demonstration has been solved, and can adopt the same technology to prepare the electrically conducts pin configuration 2 of second and the first electrically conducts pin configuration 1 when preparing drive backplate structure mould layer, consequently, prepare this drive backplate structure and do not increase extra photoetching technology, and the production cost is saved.
It can be understood that the material of the second conductive lead structure 2 may be one or a combination of molybdenum, silver, titanium and aluminum, and on the premise of not affecting various functions of the driving backplane structure, the material of the second conductive lead structure 2 may also be adjusted according to the actual production requirements, and the specific material of the second conductive lead structure 2 is not limited in the present invention. The material of the first conductive lead structure 1 may be one or a combination of more of molybdenum, silver, titanium and aluminum, and on the premise of not affecting various functions of the driving backplane structure, the material of the first conductive lead structure 1 may also be adjusted according to the actual production requirements, and the specific material of the first conductive lead structure 1 is not limited in the present invention.
In an embodiment of the present invention, the first conductive lead structure 1 is disposed perpendicular to the surface of the driving backplane structure, and the second conductive lead structure 2 is disposed perpendicular to the surface of the driving backplane structure. The first conductive lead structure 1 and the second conductive lead structure 2 are respectively arranged perpendicular to the surface of the driving backboard structure, so that the process steps are simplified during preparation and are easy to realize, and the perpendicular arrangement can ensure that the first conductive lead structure 1 and the second conductive lead structure 2 are led to the surface of the driving backboard structure by using the shortest distance, thereby saving the production cost and reducing the probability of short circuit and open circuit in the process of leading out the second conductive lead structure 2 and the first conductive lead structure 1.
It can be understood that the first conductive lead structure 1 and the second conductive lead structure 2 may be completely perpendicular to the surface of the driving backplane structure, and the first conductive lead structure 1 and the second conductive lead structure 2 may also have a certain curved path on the basis of being perpendicular to the surface of the driving backplane structure, and the specific positional relationship between the first conductive lead structure 1 and the driving backplane structure and the second conductive lead structure 2 is not limited in the present invention on the basis of ensuring that the first conductive lead and the second conductive lead structure can simultaneously lead the first conductive lead structure 1 and the second conductive lead structure 2 to the same side of the surface of the driving backplane structure.
In an embodiment of the present invention, the mold layer of the driving backplane structure further includes a passivation layer 5 and an insulating layer 6. The passivation means a phenomenon that the first conductive lead structure 1 loses chemical activity due to the fact that a metal or an alloy is hindered in the process under special conditions, and a corrosion resistant state is generated, the passivation layer 5 is a functional layer formed by the metal or the alloy, and the passivation layer 5 improves the capability of the driving backboard structure in resisting harsh environment and is beneficial to improving the photoelectric parameter performance of the display device. The insulating layer 6 is a layer of insulating material, and the insulating layer 6 mainly functions to isolate the metal layer in the first insulating layer 6. The first conductive lead structure 1 may be disposed between the passivation layer 5 and the insulating layer 6, the second conductive lead structure 2 may be disposed between the passivation layer 5 and the insulating layer 6, and the second conductive lead structure 2 may be further disposed under the insulating layer 6. The first conductive lead structure 1 is arranged between the passivation layer 5 and the insulating layer 6, and the second conductive lead structure 2 is arranged between the passivation layer 5 and the insulating layer 6 or below the insulating layer 6, which is easy to realize in process.
It will be appreciated that the first conductive lead structure 1 may be provided within the passivation layer 5, but may also be provided within other functional layers of the driving backplane structure, and the second conductive lead structure 2 may be provided within the passivation layer 5 but may also be provided within the first insulating layer 6, or within other functional layers of the driving backplane structure. On the premise that the driving backboard structure can realize normal functions and the projections of the second conductive lead structure 2 and the first conductive lead structure 1 on the surface of the driving backboard structure are arranged in a mutually separated mode, the arrangement positions of the first conductive lead structure 1 and the second conductive lead structure 2 are not limited.
It is also understood that the passivation layer 5 may be made of one or more of silicon nitride, silicon oxide, rubber and resin. The material of the passivation layer 5 can be adjusted according to actual production and customer requirements, and the specific material of the passivation layer 5 is not limited in the present invention.
It is also understood that the material of the first insulating layer 6 may be one or more of the following materials: silicon nitride and silicon oxide. The material of the first insulating layer 6 can be adjusted according to actual production and customer requirements, and the specific material of the first insulating layer 6 is not limited in the present invention.
In an embodiment of the present invention, the second conductive lead structure 2 is disposed between the passivation layer 5 and the insulating layer 6, a first opening 3 is disposed on a side of the passivation layer 5 away from the insulating layer 6, and the first opening 3 is filled with solder, wherein a plurality of first openings 3 may be disposed therein. The first opening 3 filled with solder is used to electrically connect the first conductive lead structure 1 or the second conductive lead structure 2 with an electrode of an external display device. The first conductive lead structure 1 and the second conductive lead structure 2 are respectively connected with one end of the solder in the first opening 3, the other end of the solder is electrically connected with an electrode of an external display device, the electrode of the external display device can be an anode or a cathode, the first conductive lead structure 1 can be electrically connected with the anode of the external display device through the solder in the first opening 3, and the second conductive lead structure 2 can be electrically connected with the cathode of the external display device through the solder in the first opening 3, so that the problem that the driving backboard structure and the external display device are inconvenient to integrate is solved.
It is understood that the solder material may be one or more of the following materials: indium and tin. The specific material of the solder is not limited in the present invention on the basis of ensuring that the solder can realize the electrical connection between the first conductive lead structure 1 and the second conductive lead structure 2 and the external display device.
It will also be appreciated that the projection of the first opening 3 on the surface of the driving backplate structure may be circular or square, etc. The projection shape of the first opening 3 on the surface of the driving back plate structure can be adjusted according to actual production and user requirements, and the projection shape of the first opening 3 on the surface of the driving back plate structure is not limited by the invention.
In an embodiment of the present invention, the second conductive lead structure 2 is disposed below the insulating layer 6, and the driving backplane structure further includes a metal layer. The first metal layer 7 is arranged between the passivation layer 5 and the insulating layer 6, a first opening 3 is formed in one side, far away from the insulating layer 6, of the passivation layer 5, solder is filled in the first opening 3, the first conductive lead structure 1 and the metal layer are respectively connected with the solder in the different first openings 3 and are electrically connected with an electrode of an external display device through the solder, the electrode of the external display device can be an anode or a cathode, the first conductive lead structure 1 can be electrically connected with the anode of the external display device through the solder in the first opening 3, and the metal layer can be electrically connected with the cathode of the external display device through the solder in the first opening 3. A second opening 7 is formed in the insulating layer 6 on a side close to the passivation layer 5, the metal layer is filled in the second opening 7, and the second conductive lead structure 2 is connected to the metal layer in the second opening 7. The second conductive lead structure 2 is electrically connected to an electrode of an external display device, which may be a cathode, by being connected to the metal layer in the second opening 7 and the metal layer in the first opening 3. Through the mode, the driving back plate structure is electrically connected with the external display device, and only the electrode of the external display device is welded with the solder in the first opening 3, so that the operation is simple and convenient.
It is understood that the material of the metal layer 7 may be one or more of the following materials: molybdenum, silver, titanium and aluminum. On the basis of ensuring that the metal layer 7 can realize the electrical connection between the first conductive lead structure 1 and the metal layer 7, the metal layer 7 may be made of other materials, and the specific material of the metal layer 7 is not limited in the present invention.
It will also be appreciated that the projected shape of the second opening 7 on the surface of the driving backplate structure may be circular or square, etc. The projection shape of the second opening 7 on the surface of the driving back plate structure can be adjusted according to actual production and user requirements, and the projection shape of the second opening 7 on the surface of the driving back plate structure is not limited in the invention.
Fig. 3 is a schematic structural diagram of a display panel according to an embodiment of the invention.
As shown in fig. 3, the display panel includes the driving backplane structure and the LED chip structure 4 as described in the above embodiments. The P electrode 8 and the N electrode 9 of the LED chip structure 4 are arranged on the same side, the P electrode 8 and the N electrode 9 are electrically connected with the first conductive lead structure 1 and the second conductive lead structure 2 in the driving back plate through solders, because the first conductive lead structure 1 and the second conductive lead structure 2 are arranged in the driving back plate structure, and the first conductive lead structure 1 and the second conductive lead structure 2 are mutually separated on the projection of the surface of the driving back plate structure, the first conductive lead structure 1 can be electrically connected with the P electrode 8 of the LED chip structure 4, the second conductive lead structure 2 can be electrically connected with the N electrode 9 of the LED chip structure 4, and therefore the problem that the driving back plate structure and the LED chip structure 4 are inconvenient to integrate is achieved.
It can be understood that the first conductive lead structure 1 may be electrically connected to the P electrode 8 of the LED chip structure 4, the second conductive lead structure 2 may be electrically connected to the N electrode 9 of the LED chip structure 4, or the second conductive lead structure 2 may be electrically connected to the P electrode 8 of the LED chip structure 4, the first conductive lead structure 1 may be electrically connected to the N electrode 9 of the LED chip structure 4, and the specific connection relationship between the first conductive structure and the LED electrode and the specific connection relationship between the second conductive structure and the LED electrode may be adjusted according to actual products and requirements.
Fig. 4 is a schematic flow chart illustrating a manufacturing method of a driving backplane structure according to an embodiment of the present invention.
As shown in fig. 4, the method for manufacturing the driving backplate structure includes:
step 01: providing a mold layer;
step 02: and preparing a first conductive lead structure 1 and a second conductive lead structure 2 in the mould layer, wherein the projections of the first conductive lead structure 1 and the second conductive lead structure 2 on the surface of the driving backboard structure are mutually separated. Because the second conductive lead structure 2 and the first conductive lead structure 1 are not overlapped in the surface projection of the driving backboard structure, the structures of the first conductive lead structure 1 and the second conductive lead can be arranged at the same side of the surface of the driving backboard structure, and are electrically connected with an external display device through the structures of the first conductive lead structure 1 and the second conductive lead, the problem that the existing driving backboard structure design is not beneficial to being electrically connected with the external display device for display is solved, and the second conductive lead structure 2 and the first conductive lead structure 1 can be simultaneously prepared by adopting the same process when the same mold layer is prepared, so that the driving backboard structure is prepared without adding an additional process, and the production cost is saved.
It is understood that the first and second conductive lead structures 1 and 2 may be fabricated using a photolithography process. The process means for preparing the first conductive lead structure 1 and the second conductive lead structure 2 can be changed according to actual product requirements, and the invention does not limit which process means is adopted to prepare the first conductive lead structure 1 and the second conductive lead structure 2.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and the like that are within the spirit and principle of the present invention are included in the present invention.
Claims (10)
1. A driven backplane structure, comprising:
a first conductive lead structure and a second conductive lead structure within the driving backplane structure, the first conductive lead structure and the second conductive lead structure configured to be electrically connected with electrodes of an external display device;
the first conductive lead structure and the second conductive lead structure are arranged in the same mould layer, and the projections of the first conductive lead structure and the second conductive lead structure on the surface of the driving backboard structure are mutually separated.
2. The driving backplate structure of claim 1, wherein the mold layer comprises:
a passivation layer; and
an insulating layer disposed under the passivation layer;
wherein the first conductive lead structure is disposed between the passivation layer and the insulating layer and the second conductive lead structure is disposed between the passivation layer and the insulating layer or below the insulating layer.
3. The driving backplane structure according to claim 2, wherein the second conductive lead structure is disposed between the passivation layer and the insulating layer, a first opening is disposed in a side of the passivation layer away from the insulating layer, the first opening is filled with solder, and the first conductive lead structure and the second conductive lead structure are respectively connected to the solder in the different first openings and are electrically connected to an electrode of an external display device through the solder.
4. The driving backplane structure according to claim 2, wherein the second conductive lead structure is disposed under the insulating layer, and further comprising a metal layer, the metal layer is disposed between the passivation layer and the insulating layer, a first opening is disposed in the passivation layer on a side away from the insulating layer, the first opening is filled with solder, and the first conductive lead structure and the metal layer are respectively connected to the solder in the different first openings and are electrically connected to the electrodes of the external display device through the solder;
And a second opening is formed in one side, close to the passivation layer, of the insulating layer, the metal layer is filled in the second opening, and the second conductive lead structure is connected with the metal layer in the second opening.
5. The driving backplate structure of any one of claims 2-4, wherein the passivation layer is made of one or more of the following materials: silicon nitride, silicon oxide, rubber, and resin.
6. A driving backplate structure according to any one of claims 3 to 4, wherein the solder material is selected from one or more of the following materials: indium and tin.
7. The driving backplate structure of any one of claims 1-6, wherein the first and second conductive lead structures are made of one or more of the following materials: molybdenum, silver, titanium and aluminum.
8. The driving backplate structure of any one of claims 2-4, wherein the insulating layer is made of one or more of the following materials: silicon nitride and silicon oxide.
9. A display panel comprising the driving backplane structure according to any one of claims 1 to 8 and an LED chip structure, wherein the P electrode and the N electrode in the LED chip structure are located on the same side, and the P electrode and the N electrode are electrically connected to the first conductive lead structure and the second conductive lead structure in the driving backplane through solder.
10. A method for preparing a driving backboard structure is characterized by comprising
Providing a mold layer; and
and preparing a first conductive lead structure and a second conductive lead structure in the mold layer, wherein the projections of the first conductive lead structure and the second conductive lead structure on the surface of the driving backboard structure are mutually separated.
Priority Applications (1)
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