CN109671821B - Micro light-emitting element and display device - Google Patents
Micro light-emitting element and display device Download PDFInfo
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- CN109671821B CN109671821B CN201710950870.9A CN201710950870A CN109671821B CN 109671821 B CN109671821 B CN 109671821B CN 201710950870 A CN201710950870 A CN 201710950870A CN 109671821 B CN109671821 B CN 109671821B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Abstract
The invention provides a micro light-emitting element and a display device. The micro light-emitting device includes an epitaxial structure layer, a first type electrode and a second type electrode. The epitaxial structure layer is provided with a first accommodating groove. The first type electrode is configured on the first containing groove of the epitaxial structure layer and is provided with a second containing groove. The second type electrode is configured on the epitaxial structure layer, wherein the epitaxial structure layer is positioned between the first type electrode and the second type electrode.
Description
Technical Field
The present invention relates to semiconductor devices and electronic devices, and more particularly, to a micro light emitting device and a display device.
Background
Generally, the led chip can be electrically connected to an external circuit by wire bonding or flip-chip bonding. In the flip chip connection, the electrodes of the led chip can be electrically connected to the pads on the external circuit through conductive bumps (conductive bumps), conductive paste (conductive paste), solder (solder), and other conductive materials. However, the contact area between the conductive material and the led chip is smaller than the area of the led chip, and thus there is not enough alignment margin between the conductive material and the pad of the external circuit, thereby reducing the alignment accuracy between the led chip and the external circuit.
Disclosure of Invention
The invention provides a micro light-emitting element, wherein a first type electrode of the micro light-emitting element is provided with a containing groove, and the micro light-emitting element can have larger contraposition margin.
The invention provides a display device, which has better alignment precision between a micro light-emitting element and a bonding pad arranged on a driving substrate.
The invention relates to a micro light-emitting element, which comprises an epitaxial structure layer, a first type electrode and a second type electrode. The epitaxial structure layer is provided with a first accommodating groove. The first type electrode is configured on the first containing groove of the epitaxial structure layer and is provided with a second containing groove. The second type electrode is configured on the epitaxial structure layer, wherein the epitaxial structure layer is positioned between the first type electrode and the second type electrode.
In an embodiment of the invention, the epitaxial structure layer includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is arranged between the first type semiconductor layer and the second type semiconductor layer, the width of the first type semiconductor layer is larger than or equal to that of the second type semiconductor layer, and the first type semiconductor layer is provided with a first accommodating groove.
In an embodiment of the invention, the first type electrode is an N-type electrode, and the second type electrode is a P-type electrode.
In an embodiment of the invention, the melting point of the first type electrode is between 100 degrees and 300 degrees.
In an embodiment of the invention, the first receiving recess has a first depth, and a ratio of the first depth to a maximum height of the epitaxial structure layer is greater than 0 and less than or equal to 0.5.
In an embodiment of the invention, the second receiving recess has a first width, and a ratio of the first width to a maximum width of the epitaxial structure layer is greater than 0.6 and less than 1.
In an embodiment of the invention, the micro light emitting device further includes an insulating layer covering a first peripheral surface of the epitaxial structure layer.
In an embodiment of the invention, an edge of the insulating layer is aligned with the second peripheral surface of the first type electrode.
The display device comprises a driving substrate, a plurality of bonding pads and a plurality of micro light-emitting elements. The bonding pads are distributed on the driving substrate. The micro light-emitting elements are distributed on the driving substrate and respectively correspond to the bonding pads. Each micro light-emitting device includes an epitaxial structure layer, a first type electrode and a second type electrode. The epitaxial structure layer is provided with a first accommodating groove, wherein the first accommodating groove and the driving substrate define a space. The first type electrode is arranged on the first containing groove of the epitaxial structure layer and is positioned in the space. The first type electrodes are electrically connected with the corresponding bonding pads. The second type electrode is configured on the epitaxial structure layer, wherein the epitaxial structure layer is positioned between the first type electrode and the second type electrode.
In an embodiment of the invention, the epitaxial structure layer includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The light emitting layer is arranged between the first type semiconductor layer and the second type semiconductor layer, the width of the first type semiconductor layer is larger than or equal to that of the second type semiconductor layer, and the first type semiconductor layer is provided with a first accommodating groove.
In an embodiment of the invention, the first type electrode is an N-type electrode, and the second type electrode is a P-type electrode.
In an embodiment of the invention, the melting point of the first type electrode is between 100 degrees and 300 degrees.
In an embodiment of the invention, the first receiving recess has a first depth, and a ratio of the first depth to a maximum height of the epitaxial structure layer is greater than 0 and less than or equal to 0.5.
In an embodiment of the invention, the display device further includes an insulating layer covering the first peripheral surface of the epitaxial structure layer.
In an embodiment of the invention, an edge of the insulating layer is aligned with the second peripheral surface of the first type electrode.
In an embodiment of the invention, a melting point of each of the bonding pads is greater than or equal to a melting point of the first-type electrode.
In an embodiment of the invention, an area of an orthographic projection of the first-type electrode of each of the micro light emitting devices on the driving substrate is larger than an area of an orthographic projection of the corresponding bonding pad on the driving substrate.
In an embodiment of the invention, a ratio of an orthographic projection area of the first type electrode of each of the micro light emitting devices on the driving substrate to an orthographic projection area of the corresponding bonding pad on the driving substrate is greater than 1 and less than or equal to 10.
In an embodiment of the invention, an air gap is formed between the first-type electrode of each of the micro light emitting devices and the driving substrate.
In an embodiment of the invention, the first-type electrode of each of the micro light emitting devices directly contacts the driving substrate.
In view of the above, the epitaxial structure layer of the micro light emitting device of the present invention has a first receiving groove, and the first type electrode is disposed on the first receiving groove of the epitaxial structure layer and has a second receiving groove. Therefore, when the first type electrode and the driving substrate are used for a subsequent bonding process, the design of the accommodating groove can enable the micro light-emitting element of the invention to have larger alignment margin. In addition, the display device adopting the micro light-emitting element can improve the alignment precision between the micro light-emitting element and the bonding pad arranged on the driving substrate through the design of the accommodating groove.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1A is a schematic top view of a display device according to an embodiment of the invention;
FIG. 1B is a schematic partial cross-sectional view of the display device of FIG. 1A;
FIG. 1C is a schematic diagram of a micro light-emitting device according to an embodiment of the invention;
FIG. 1D is a schematic partial cross-sectional view of another display device according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a micro light-emitting device according to another embodiment of the present invention;
fig. 3 is a schematic diagram of a micro light-emitting device according to another embodiment of the invention. Description of the reference numerals
10: a display device;
100: a drive substrate;
120: a pixel region;
140: a scanning line driving circuit;
160: a data line drive circuit;
180: a control circuit;
200A, 200B, 200C: a micro light-emitting element; 220. 220b, 220 c: an epitaxial structure layer;
222 a: a first accommodating groove;
222b, 222 c: a first peripheral surface;
224. 224 c: a first type semiconductor layer;
226. 226 c: a light emitting layer;
228. 228 c: a second type semiconductor layer;
240. 240b, 240 c: a first type electrode;
242 a: a second accommodating groove;
242b, 242 c: a second perimetral surface;
260. 260b, 260 c: a second type electrode;
280b, 280 c: an insulating layer;
300: a bonding pad;
a1, A2: a space;
d1: a first depth;
d2: a maximum height;
g: an air gap;
w1: a first width;
w2: a maximum width;
s1: a bottom surface;
s2: a side surface;
t1, T2: width.
Detailed Description
Fig. 1A is a schematic top view of a display device according to an embodiment of the invention. Fig. 1B is a partial cross-sectional schematic view of the display device of fig. 1A. Fig. 1C is a schematic diagram of a micro light emitting device according to an embodiment of the invention. Referring to fig. 1A, fig. 1B and fig. 1C, the display device 10 of the present embodiment includes a driving substrate 100, a plurality of micro light emitting elements 200A and a plurality of bonding pads 300. The micro light emitting devices 200A and the bonding pads 300 are respectively disposed on the driving substrate 100 in a distributed manner, and the micro light emitting devices 200A respectively correspond to the bonding pads 300. Each of the micro light emitting devices 200A includes an epitaxial structure layer 220, a first type electrode 240, and a second type electrode 260. The epitaxial structure layer 220 has a first receiving recess 222 a. The first-type electrode 240 is disposed on the first receiving cavity 222a of the epitaxial structure layer 220 and has a second receiving cavity 242 a. The second type electrode 260 is disposed on the epitaxial structure layer 220, wherein the epitaxial structure layer 220 is located between the first type electrode 240 and the second type electrode 260. Here, the display device 10 may be a micro light emitting diode display device, but the invention is not limited thereto. In addition, the display device 10 of the present embodiment only exemplarily shows three micro light emitting elements 200A, but those skilled in the art can change the number of the micro light emitting elements 200A according to actual requirements after considering the present invention, and the present invention is not limited thereto.
In detail, referring to fig. 1A, the driving substrate 100 of the present embodiment has a plurality of pixel regions 120, the micro light emitting devices 200A are separately disposed on the driving substrate 100, and at least three micro light emitting devices 200A are disposed in each pixel region 120, wherein the micro light emitting devices 200A can emit different light colors. More specifically, the display device 10 of the present embodiment further includes a scan line driving circuit 140, a data line driving circuit 160 and a control circuit 180, wherein the data line driving circuit 160 and the scan line driving circuit 140 are disposed on the driving substrate 100 and electrically connected to the driving substrate 100. The micro light emitting device 200A can emit light by driving the data line driving circuit 160 and the scan line driving circuit 140, and the data line driving circuit 160 and the scan line driving circuit 140 are electrically connected to the control circuit 180, so that the light emitting sequence and time of the micro light emitting device 200A can be adjusted by the design of the control circuit 180. Here, the driving substrate 100 of the present embodiment is, for example, a Complementary Metal-Oxide-Semiconductor (CMOS) substrate, a Liquid Crystal On Silicon (LCOS) substrate, a Thin Film Transistor (TFT) substrate, or other substrates having an operating circuit, and is not limited thereto.
Referring to fig. 1C, the micro light-emitting device 200A of the present embodiment is embodied as a micro light-emitting device that is not yet bonded to the driving substrate 100. The epitaxial structure layer 220 of the micro light emitting device 200A includes a first type semiconductor layer 224, a light emitting layer 226 and a second type semiconductor layer 228. The light emitting layer 226 is disposed between the first type semiconductor layer 224 and the second type semiconductor layer 228, wherein the first type semiconductor layer 224 has a first receiving cavity 222 a. More specifically, the first receiving cavity 222a is formed by a portion of the first-type semiconductor layer 224. The width T1 of the first-type semiconductor layer 224 is greater than the width T2 of the second-type semiconductor layer 228. In other words, in the micro light emitting device 200A of the present embodiment, the width of the epitaxial structure layer 220 gradually decreases from the first-type semiconductor layer 224 to the second-type semiconductor layer 228, so that the cross-sectional shape of the epitaxial structure layer 220 in the vertical direction is a trapezoid. It should be noted that the maximum width difference between the first-type semiconductor layer 224 and the second-type semiconductor layer 228 of the epitaxial structure layer 220 of the micro light-emitting device 200A can be adjusted between 0 micron and 5 microns according to the practical requirements of the product application. That is, in other embodiments not shown, the width of the first type semiconductor layer may be equal to the width of the second type semiconductor layer, which is not limited herein. In addition, the maximum height of the first-type semiconductor layer 224 in the vertical cross section of the present embodiment may be greater than the maximum height of the second-type semiconductor layer 228 in the vertical cross section. Specifically, the height of the first type semiconductor layer 224 on the vertical cross section may be between 1 micron and 5 microns, the height of the light emitting layer 226 on the vertical cross section may be between 0.1 micron and 1 micron, and the height of the second type semiconductor layer 228 on the vertical cross section may be between 0.1 micron and 0.5 micron, so that the overall height of the epitaxial structure layer 220 may be controlled to be between 1 micron and 6 microns to ensure the yield of the subsequent processes and the characteristics of the end product.
In the present embodiment, the first type electrode 240 and the second type electrode 260 of the micro light emitting device 200A are respectively located on two opposite sides of the epitaxial structure layer 220, wherein the first type electrode 240 is electrically connected to the first type semiconductor layer 224 of the epitaxial structure layer 220, and the second type electrode 260 is electrically connected to the second type semiconductor layer 228 of the epitaxial structure layer 220. In other words, the Micro light emitting device 200A is embodied as a Vertical Micro light emitting diode (Vertical Type Micro LED), and the maximum width thereof may be between 1 micron and 100 microns, and more preferably between 1 micron and 50 microns. Here, the first type electrode 240 is embodied as an N-type electrode, and the second type electrode 260 is embodied as a P-type electrodeBut not limited thereto. Here, the material of the first-type electrode 240 may be a low-melting metal such as indium (In), tin (Sn), an alloy thereof, and a combination thereof, so as to facilitate subsequent process operations and yield of the display device 10. Here, the melting point of the first-type electrode 240 may be between 100 degrees and 300 degrees, but not limited thereto. The second type electrode 260 is made of a translucent conductive material or a transparent conductive material, such as Indium Tin Oxide (ITO) having a high work function of 4.5eV to 5.3eV, a stable property, and a high light transmittance, so that the light generated by the light emitting layer 226 can be emitted through the second type electrode 260. In addition, the maximum peak current density of the external quantum efficiency curve of the micro light-emitting device 200A is preferably between 0.01A/cm2To 2A/cm2In the meantime. That is, the micro light-emitting element 200A of the present embodiment is adapted to operate at a low current density.
More specifically, as shown in fig. 1C, the first-type electrode 240 conformally covers the first-type semiconductor layer 224 and has a second receiving recess 242 a. Specifically, the first-type electrode 240 completely covers the first receiving recess 222a of the epitaxial structure layer 220, and the cross-sectional shape of the second receiving recess 242a is substantially the same as the cross-sectional shape of the first receiving recess 222 a. Here, the thickness of the first-type electrode 240 on the bottom surface S1 of the first receiving groove 222a is greater than the thickness of the first-type electrode 240 on the side surface S2 of the first receiving groove 222a, so as to avoid damaging the fragile side surface of the first receiving groove 222a of the first-type semiconductor layer 224. Of course, in other embodiments not shown, the first type electrode may also be covered on the bottom surface and the side surface of the first receiving groove with the same thickness, which still falls within the protection scope of the present invention. Preferably, the first receiving groove 222a of the present embodiment has a first depth D1, the epitaxial structure layer 220 has a maximum height D2, and a ratio of the first depth D1 to the maximum height D2 is greater than 0 and less than or equal to 0.5, so that the micro light emitting device 200A has a better structure yield. If the ratio is greater than 0.5, the structure yield of the micro light-emitting device 200A itself is affected by the depth of the first receiving recess 222 a. In addition, the second receiving groove 242a has a first width W1, the epitaxial structure layer 220 has a maximum width W2, and a ratio of the first width W1 to the maximum width W2 is greater than 0.6 and less than 1, so that the second receiving groove 242a of the first type electrode 240 has a certain aperture ratio, and the micro light emitting device 200A can have a better alignment margin in a subsequent process. If the width ratio is less than 0.6, the process margin of the subsequent bonding process is affected.
Referring to fig. 1A and 1B, the bonding pads 300 of the present embodiment correspond to the micro light emitting devices 200A, and are disposed on the driving substrate 100 in an array arrangement, for example. The area of the first-type electrode 240 of the micro light emitting device 200A projected forward on the driving substrate 100 is larger than the area of the corresponding bonding pad 300 projected forward on the driving substrate 100. More specifically, the ratio of the forward projection area of the first-type electrode 240 of the micro light-emitting device 200A on the driving substrate 100 to the forward projection area of the corresponding bonding pad 300 on the driving substrate 100 is greater than 1 and less than or equal to 10. That is, the ratio of the forward projection area of the first-type electrode 240 of the micro light-emitting device 200A on the driving substrate 100 to the forward projection area of the bonding pad 300 on the driving substrate 100 varies according to the size of the micro light-emitting device 200A and the actual design requirement. For example, when the size of the micro light emitting device 200A is larger than 50 μm, since the size of the micro light emitting device 200A is larger, the ratio of the area of the first electrode layer 240 of each micro light emitting device 200A to the area of the bonding pad 300 on the driving substrate 100 is larger than 3 and smaller than or equal to 10, and thus, the process tolerance can be increased during the alignment bonding. In addition, when the size of the micro light emitting devices 200A is smaller than or equal to 50 μm, since the size of the micro light emitting devices 200A is smaller, the ratio of the area of the first electrode layer 240 of each micro light emitting device 200A to the area of the forward projection of the corresponding bonding pad 300 on the driving substrate 100 is greater than 1 and less than or equal to 5, which can provide a better process yield in the alignment bonding. Here, the material of the bonding pad 300 includes gold (Au), titanium (Ti), platinum (Pt), aluminum (Al), nickel (Ni), chromium (Cr), indium (In), tin (Sn), or an alloy of the above metals. Specifically, the melting point of the bonding pad 300 may be equal to or higher than the melting point of the first-type electrode 240. Here, the bonding pad 300 is selected from a metal or an alloy having a melting point close to that of the first-type electrode 240, such as indium, but not limited thereto. In this case, the overall arrangement of the display device 10 of the present embodiment is substantially completed.
In assembly, referring to fig. 1B and fig. 1C, first, the second receiving groove 242a of the first-type electrode 240 of the micro light emitting device 200A faces the driving substrate 100 provided with the bonding pad 300. Next, the micro light emitting device 200A is placed on the driving substrate 100 by a bonding process, such that the first type electrode 240 of the micro light emitting device 200A directly contacts and is electrically connected to the driving substrate 100, and the corresponding bonding pad 300 is located in the space a1 defined by the second receiving groove 242a and the driving substrate 100. At this time, the temperature of the bonding process may be such that the low melting point first-type electrode 240 is in a molten state and electrically connected to the corresponding bonding pad 300, so as to be bonded to the driving substrate 100. At this time, the low melting point bonding pad 300 may also assume a partially molten state to eutectic-bond with the first-type electrode 240 assuming a molten state. Since the first-type electrode 240 has the second receiving groove 242a, the molten bonding pad 300 and the molten first-type electrode 240 are mostly retained in the space a1 defined by the second receiving groove 242a and the driving substrate 100, and do not overflow and scatter to the driving substrate 100. Then, a curing process is performed to cure the first-type electrode 240 and the bonding pad 300 in a molten state, so as to complete the assembly of the micro light-emitting device 200A on the driving substrate 100 to define the display device 10.
Since the first-type electrode 240 and the bonding pad 300 are both metals or alloys with low melting points, the operating temperature does not need to be too high when the micro light-emitting device 200A is bonded to the driving substrate 100 through the bonding pad 300 to form the display device 10, and thus the yield is better. It should be noted that the design of the second receiving groove 242a of the first type electrode 240 of the present embodiment has a guiding function, so that when the micro light emitting device 200A touches the edge of the corresponding bonding pad 300, the corresponding bonding pad 300 can be received in the second receiving groove 242a, thereby having a larger alignment margin and improving the alignment accuracy between the micro light emitting device 200A and the driving substrate 100.
In addition, as shown in fig. 1B, after the micro light-emitting device 200A is bonded to the driving substrate 100, the space a1 defined by the micro light-emitting device 200A and the driving substrate 100 is completely filled with the molten first-type electrode 240 and the bonding pad 300. Therefore, no air gap is present in the space a1 during the subsequent curing process. However, referring to fig. 1D, the space a2 defined by the first-type electrode 240 of the micro light emitting device 200A and the driving substrate 100 may also have an air gap G serving as a buffer space during bonding. That is, there is an air gap G between the micro light emitting device 200A and the driving substrate 100, but the air gap G does not affect the electrical performance of the display device 10, and still falls within the protection scope of the present invention.
It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Fig. 2 is a schematic diagram of a micro light-emitting device according to another embodiment of the present invention. Referring to fig. 1C and fig. 2, the micro light emitting device 200B of the present embodiment is similar to the micro light emitting device 200A of fig. 1C, and the difference between the two is: the micro light emitting device 200B of the present embodiment further includes an insulating layer 280B, wherein the insulating layer 280B covers the first peripheral surface 222B of the epitaxial structure layer 220B to prevent external moisture or oxygen from invading the epitaxial structure layer 220B. Here, the insulating layer 280b is disposed on the first peripheral surface 222b of the epitaxial structure layer 220b and between the first-type electrode 240b and the second-type electrode 260 b. In particular, the edge of the insulating layer 280b is aligned with the second peripheral surface 242b of the first-type electrode 240b, and the first-type electrode 240b is extended and disposed on the insulating layer 280b, so that the first-type electrode 240b and the bonding pad (not shown) have a larger bonding area. Here, the edge of the insulating layer 280b is also aligned with the peripheral surface of the second type electrode 260b, so that the subsequent common electrode (not shown) has a larger bonding area, but in other embodiments, the second type electrode may be retracted without being aligned with the edge of the insulating layer, which is not limited herein.
Fig. 3 is a schematic diagram of a micro light-emitting device according to another embodiment of the invention. Referring to fig. 2 and fig. 3, the micro light emitting device 200C of the present embodiment is similar to the micro light emitting device 200B of fig. 2, and the difference between the two devices is: in the present embodiment, the insulating layer 280c covers the first peripheral surface 222c of the epitaxial structure layer 220c, and further extends from the second type semiconductor layer 228c to a portion of the side surface covering the second type electrode 260c, so as to further ensure that the epitaxial structure layer 220c is not damaged by the invasion of moisture or oxygen from the outside. In addition, due to process variations, the first-type semiconductor layer 224C of the epitaxial structure layer 220C of the micro light-emitting device 200C may also partially extend between the first-type electrode 240C and the insulating layer 280C, as long as the insulating layer 280C provides enough protection for the light-emitting layer 226C of the epitaxial structure layer 220C from water or oxygen, which is within the scope of the present invention. Here, the first-type semiconductor layer 224c, the insulating layer 280c and the second peripheral surface 242c of the first-type electrode 240c are substantially aligned.
In summary, the epitaxial structure layer of the micro light emitting device of the present invention has a first receiving groove, and the first type electrode is disposed on the first receiving groove of the epitaxial structure layer and has a second receiving groove. Therefore, when the first type electrode and the driving substrate are used for carrying out the subsequent bonding process, the design of the accommodating groove can ensure that the micro light-emitting element of the invention has larger alignment margin. In addition, the display device adopting the micro light-emitting element can improve the alignment precision between the micro light-emitting element and the bonding pad arranged on the driving substrate through the design of the accommodating groove of the micro light-emitting element.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (18)
1. A micro light-emitting device, comprising:
the epitaxial structure layer is provided with a first accommodating groove;
the first type electrode is configured on the first accommodating groove of the epitaxial structure layer and is provided with a second accommodating groove;
the second type electrode is configured on the epitaxial structure layer, wherein the epitaxial structure layer is positioned between the first type electrode and the second type electrode; and
an insulating layer covering the first peripheral surface of the epitaxial structure layer, wherein the first type electrode is extended and configured on the insulating layer,
the epitaxial structure layer comprises a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting layer is arranged between the first type semiconductor layer and the second type semiconductor layer, the first accommodating groove is formed by one part of the first type semiconductor layer, and the first type electrode is conformally and completely covered on the first accommodating groove of the first type semiconductor layer to form the second accommodating groove.
2. The micro light-emitting device as claimed in claim 1, wherein the width of the first type semiconductor layer is greater than or equal to the width of the second type semiconductor layer, and the first type semiconductor layer has the first receiving groove.
3. A micro-lighting element according to claim 1, wherein the first type electrode is an N-type electrode and the second type electrode is a P-type electrode.
4. The micro light-emitting device of claim 1, wherein the first type of electrode has a melting point between 100 degrees and 300 degrees.
5. The micro light-emitting device as claimed in claim 1, wherein the first receiving recess has a first depth, and a ratio of the first depth to a maximum height of the epitaxial structure layer is greater than 0 and less than or equal to 0.5.
6. The micro light-emitting device as claimed in claim 1, wherein the second receiving recess has a first width, and a ratio of the first width to a maximum width of the epitaxial structure layer is greater than 0.6 and less than 1.
7. A micro-light-emitting element according to claim 1, wherein an edge of the insulating layer is flush with the second peripheral surface of the first-type electrode.
8. A display device, comprising:
a drive substrate;
a plurality of bonding pads disposed on the driving substrate in a distributed manner; and
a plurality of micro light emitting devices disposed on the driving substrate in a distributed manner and corresponding to the bonding pads, wherein each of the plurality of micro light emitting devices includes:
the epitaxial structure layer is provided with a first accommodating groove;
a first type electrode disposed on the first receiving recess of the epitaxial structure layer and having a second receiving recess, wherein the second receiving recess and the driving substrate define a space;
the second type electrode is configured on the epitaxial structure layer, wherein the epitaxial structure layer is positioned between the first type electrode and the second type electrode; and
an insulating layer covering the first peripheral surface of the epitaxial structure layer, wherein the first type electrode is extended and configured on the insulating layer,
wherein the epitaxial structure layer includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer, the first receiving groove is formed by a part of the first type semiconductor layer, the first type electrode is conformally and completely covered on the first type semiconductor layer the first receiving groove is formed the second receiving groove, the plurality of bonding pads are correspondingly and completely disposed by the second receiving groove and the space defined by the driving substrate, and the first type electrode is electrically connected with the plurality of bonding pads.
9. The display device according to claim 8, wherein a width of the first type semiconductor layer is greater than or equal to a width of the second type semiconductor layer, wherein the first type semiconductor layer has the first receiving groove.
10. The display device according to claim 8, wherein the first type electrode is an N-type electrode and the second type electrode is a P-type electrode.
11. The display device according to claim 8, wherein the melting point of the first type electrode is between 100 and 300 degrees.
12. The display device according to claim 8, wherein the first receiving recess has a first depth, and a ratio of the first depth to a maximum height of the epitaxial structure layer is greater than 0 and less than or equal to 0.5.
13. The display device according to claim 8, wherein an edge of the insulating layer is cut to be flush with the second peripheral surface of the first-type electrode.
14. The display device according to claim 8, wherein each of the plurality of bonding pads has a melting point equal to or higher than a melting point of the first-type electrode.
15. The display device according to claim 8, wherein an area of an orthographic projection of the first-type electrode of each of the plurality of micro light-emitting elements on the driving substrate is larger than an area of an orthographic projection of the corresponding plurality of bonding pads on the driving substrate.
16. The display device according to claim 15, wherein a ratio of an area of the first type electrode of each of the plurality of micro light-emitting elements projected forward on the driving substrate to an area of the corresponding plurality of bonding pads projected forward on the driving substrate is greater than 1 and equal to or less than 10.
17. The display device according to claim 8, wherein an air gap is provided between the first-type electrode of each of the plurality of micro light-emitting elements and the driving substrate.
18. The display device according to claim 8, wherein the first-type electrode of each of the plurality of micro light-emitting elements directly contacts the driving substrate.
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| US11387387B2 (en) | 2017-10-13 | 2022-07-12 | PlayNitride Display Co., Ltd. | Micro light emitting device display apparatus |
| DE102019125447A1 (en) * | 2019-09-20 | 2021-03-25 | Infineon Technologies Ag | Semiconductor substrate with a Bondpat material based on aluminum |
| CN110619825B (en) * | 2019-10-31 | 2022-01-04 | 錼创显示科技股份有限公司 | Electrode structure, micro light-emitting element and display panel |
| CN110957342B (en) * | 2019-12-30 | 2023-08-29 | 錼创显示科技股份有限公司 | Micro light-emitting element display device |
| CN111063270B (en) * | 2019-12-30 | 2022-06-21 | 錼创显示科技股份有限公司 | Micro light emitting device display device |
| TWI739552B (en) * | 2020-03-20 | 2021-09-11 | 錼創顯示科技股份有限公司 | Micro light emitting diode display panel |
| US11450796B2 (en) | 2020-03-20 | 2022-09-20 | PlayNitride Display Co., Ltd. | Micro light emitting diode display panel |
| CN111463233B (en) * | 2020-04-16 | 2022-09-13 | 錼创显示科技股份有限公司 | Micro light emitting device display device |
| TWI726685B (en) | 2020-04-16 | 2021-05-01 | 錼創顯示科技股份有限公司 | Micro light-emitting device display apparatus |
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