CN111863628B - Process method for eliminating micro short circuit in production of functional chip by using megohmmeter - Google Patents
Process method for eliminating micro short circuit in production of functional chip by using megohmmeter Download PDFInfo
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- CN111863628B CN111863628B CN202010646046.6A CN202010646046A CN111863628B CN 111863628 B CN111863628 B CN 111863628B CN 202010646046 A CN202010646046 A CN 202010646046A CN 111863628 B CN111863628 B CN 111863628B
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- short circuit
- micro short
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000012535 impurity Substances 0.000 claims abstract description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 33
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- 238000012360 testing method Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 5
- 238000010329 laser etching Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 4
- 230000002950 deficient Effects 0.000 abstract description 2
- 238000011056 performance test Methods 0.000 abstract description 2
- 238000002474 experimental method Methods 0.000 description 5
- 238000002679 ablation Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001641746 Grahamia <wasp> Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 244000144992 flock Species 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- -1 sundries Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a process method for eliminating micro short circuit generated in functional chip production by utilizing a megger, which relates to the technical field of eliminating the micro short circuit of the functional chip and comprises the following steps: s1, preparing a jig, S2, measuring by using a universal meter, S3, selecting a voltage value of the megger, S4, binding two pointers of the megger with a pad in a contact manner, S5, eliminating impurities of micro short circuit, S6, observing by using a high-definition video microscope, S7, performing work performance test, S8, selecting the voltage of the megger, S9, and eliminating poor short circuit. In the invention, the micro short circuit can influence the touch accuracy and linearity, the NG item is also used in program debugging, the functional chip is a defective product when the micro short circuit occurs, if the functional chip can not be repaired, the functional chip needs to be scrapped, the process can eliminate the micro short circuit, the production through rate of the functional chip is greatly improved, the scrappage rate is reduced, compared with the old process, the process has the advantages that the impurities of the micro short circuit are ablated by using a megohmmeter, the process is simple and quick, the accuracy is high, secondary defects are not easily caused, and for example, a circuit is cut off when the position of the short circuit is cut.
Description
Technical Field
The invention relates to the technical field of eliminating micro short circuit of a functional chip, in particular to a process method for eliminating micro short circuit in the production of the functional chip by utilizing a megohmmeter.
Background
The position of short circuit is confirmed at first to the little short circuit that function piece production appears using high definition video microscope inspection, and then the staff cuts off the place of short circuit with sharp blade under high definition video microscope, because the line spacing linewidth of silver thick liquid circuit is bigger, and the cutting is still easy.
The process is difficult to find the position of the short circuit, and because the micro short circuit is generally caused by connecting two or more silver paste lines by impurities such as dust, impurities, silver paste impurities, fiber impurities during production, employee hair and flocks and the like in the air, the micro short circuit is difficult to observe under a microscope or to detect by other technical means. Therefore, the production of the functional chip has micro short circuit, basically cannot be repaired, and only the functional chip can be scrapped.
Disclosure of Invention
The invention aims to provide a process method for eliminating micro short circuit in functional chip production by using a megohmmeter, which does not need to confirm the position of the micro short circuit any more and can solve the problems that the micro short circuit of a silver paste line with the line width and the line distance of below 130um cannot be cut by a sharp blade.
In order to achieve the purpose, the invention is realized by the following technical scheme: a process method for eliminating micro short circuit in functional chip production by using a megohmmeter comprises the following steps:
s1, preparing a jig: multimeters, megohmmeters and high-definition video microscopes with M ohm-rating.
S2, after silver paste laser etching, using a universal meter to measure and check the micro short circuit of the silver paste circuit, adjusting the universal meter to 200M omega level for measurement, contacting two pointers with two adjacent ITO channels, and displaying that the universal meter is larger than 0.1M omega, namely, the micro short circuit.
And S3, selecting the voltage value of the megger according to the laser line distance of the silver paste.
And S4, placing two pointers of the megger on the two short-circuited silver paste binding pads.
And S5, the current generated between the megger voltage and the silver paste circuit resistance can ablate and eliminate the impurities causing the micro short circuit.
And S6, observing by using a high-definition video microscope.
And S7, connecting a control card after the FPC is bonded to perform work performance test.
And S8, displaying the short circuit by the control card test software, and selecting the megameter voltage according to the laser line distance of the silver paste.
S9, two pointers of the megger are placed on pin pins of two short-circuit channels corresponding to the FPC, and therefore micro short-circuit defects can be eliminated.
And S10, measuring by using a multimeter.
Preferably, the method comprises the following steps: according to the operation step in S1, the model of the multimeter is: VICTORVC9807A +, the model number of the megohmmeter is: VICTORVC60B +, model number of high definition video microscope: TTL, HK, 15-45 times.
Preferably, the method comprises the following steps: according to the operation step in S2, the ITO channel, i.e., the test channel, has an impedance greater than 0.1M Ω and is a micro short between 0 and several tens M Ω.
Preferably, the method comprises the following steps: according to the operation step in S3, the voltage values are: 250/500/1000 VDC.
Preferably, the method comprises the following steps: according to the operation procedure in S4, the megger voltage is adjusted to 500 VDC. The contact time is not more than 2S.
Preferably, the method comprises the following steps: according to the operation procedure in S6, if there is still any impurity, the operation procedures from S2 to S6 are repeated until there is no impurity, and the process proceeds to the next step.
Preferably, the method comprises the following steps: according to the operation step in S7, the supplier of the control card is: dada gaco or EETI.
Preferably, the method comprises the following steps: according to the operation steps in S10, if the repair is successful when the multimeter measurement value is 0, the multimeter measures between 0 and dozens of M omega, and the operation steps from S7 to S9 are repeated until the multimeter measurement value is 0.
The invention provides a process method for eliminating micro short circuit in functional chip production by using a megohmmeter. The method has the following beneficial effects:
1. according to the process method for eliminating the micro short circuit in the functional chip production by using the megohmmeter, the micro short circuit can influence the touch accuracy and linearity, the NG item is also used in program debugging, the functional chip is a defective product when the micro short circuit occurs, if the functional chip cannot be repaired, the functional chip needs to be scrapped, the process can eliminate the micro short circuit, the production through rate of the functional chip is greatly improved, and the scrappage is reduced.
2. Compared with the prior art, the process method for eliminating the micro short circuit in the production of the functional chip by using the megohmmeter has the advantages that the ablation of impurities in the micro short circuit by using the megohmmeter is simple, quick and high in accuracy, and secondary defects are not easily caused, for example, a circuit is cut off when the position of the short circuit is cut.
3. The process method for eliminating the micro short circuit in the production of the functional chip by using the megohmmeter can solve the problem of the micro short circuit of the silver paste circuit with the line width of below 130 um.
4. The process method for eliminating the micro short circuit in the production of the functional chip by using the megohmmeter does not need to visually check and confirm the position of the micro short circuit, and the position of the micro short circuit is relatively difficult to detect for large sizes.
Drawings
FIG. 1 is a schematic flow chart of the method of the present invention.
Detailed Description
The invention provides a technical scheme that: as shown in fig. 1, a process for eliminating micro short circuit in functional chip production by using a megohmmeter comprises the following specific steps:
step one, preparing a jig: take universal meter, megohmmeter, high definition video microscope of M euro shelves, the model of universal meter is: VICTORVC9807A +, the model number of the megohmmeter is: VICTORVC60B +, model number of high definition video microscope: TTL, HK, 15-45 times.
And step two, after silver paste laser etching, using a universal meter to measure and check the micro short circuit of the silver paste circuit, adjusting the universal meter to 200M omega level for measurement, contacting two adjacent ITO channels by two pointers, wherein the universal meter displays that the impedance of the ITO channels is more than 0.1M omega, namely the micro short circuit, and the impedance of the ITO channels, namely the test channels, is more than 0.1M omega, and the micro short circuit is between 0 and dozens of M omega.
Selecting a voltage value of the megger according to the laser line distance of the silver paste, wherein the voltage value is as follows: 250/500/1000 VDC.
And step four, placing two pointers of the megger on the two short-circuited silver paste binding pads, adjusting the voltage of the megger to be 500VDC, and enabling the contact time to be not more than 2S.
And step five, the current generated between the megger voltage and the silver paste circuit resistor can ablate and eliminate impurities causing micro short circuit.
And sixthly, observing by using a high-definition video microscope, and repeating the operation steps from S2 to S6 until no impurities exist, if impurities exist, observing by using the high-definition video microscope, and then entering the next step.
Connecting a control card to perform function test after the FPC is bonded, wherein the supplier of the control card is as follows: dada gaco or EETI (grahamia).
And step eight, the software for testing the control card can display the short-circuited specific line at the moment, and the megameter voltage is selected according to the line distance of the silver paste laser.
And step nine, placing two pointers of the megger on pin pins of two short-circuited line channels corresponding to the FPC, so that the defect of micro short circuit can be eliminated.
Step ten, using a universal meter to measure, if the measured value of the universal meter is 0, the repair is successful, the measured value of the universal meter is between 0 and dozens of M omega, and repeating the operation steps from S7 to S9 until the measured value of the universal meter is 0.
The process difficulty lies in judging the relationship between the voltage setting of the megohmmeter and the length of the silver paste and the line distance and line width of the silver paste circuit and the setting of the contact time of the pointer, and because the larger the voltage is, the longer the contact time is, the larger the ablation effect on the silver paste circuit is, the silver paste circuit can become scorched and crisp, even the silver paste circuit can be scorched and become invalid, and through multiple experiments, the experimental data are as follows:
through a plurality of experiments, the following results are obtained: experimental data that micro short circuit caused by impurities such as dust, sundries, silver paste sundries in the air, fiber sundries and employee hair scraps during production and the like appears on the functional sheet of 10.1-86 inches, the voltage of a megohmmeter is uniformly adjusted to 500VDC, and the contact time is not more than 2S.
Multiple experiments lead to the conclusion that: 1. experiments confirm that no matter the size of the laser line distance, 500V/1-2S is selected as the optimal condition, 2, for a sensor with the laser line distance not less than 220um, 500V voltage is selected as the optimal voltage, if the optimal voltage cannot be eliminated, 1000V is used instead, the contact time is 1S as the optimal voltage, the 3 and 1000V gears are used with caution, the same contact time occurs in the experiment, and silver paste contacted by a gauge pen when 1000V is selected can be ablated to be in a scorched state (observable under a microscope), so that the open circuit of the silver paste circuit is caused.
The product was tested for properties as follows:
the foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various changes and modifications can be made without departing from the inventive concept of the present invention, and these changes and modifications are all within the scope of the present invention.
Claims (5)
1. A process method for eliminating micro short circuit in functional chip production by using a megohmmeter is characterized by comprising the following steps:
s1, preparing a jig: a universal meter, a megohmmeter and a high-definition video microscope with an M ohm grade;
s2, after silver paste laser etching, using a universal meter to measure and check the micro short circuit of the silver paste circuit, adjusting the universal meter to 200M omega level for measurement, contacting two pointers with two ITO channels, wherein the universal meter displays that the number is 0.1-dozens of M omega, namely the micro short circuit, and the ITO channels are the impedance of the test channel;
s3, selecting a megger voltage value according to the length of the silver paste, the line-to-line width relation of the silver paste circuit and the pointer contact time;
s4, placing two pointers of the megger on the two short-circuited silver paste binding pads;
s5, the current generated between the megger voltage and the silver paste circuit resistance can ablate and eliminate the impurity causing micro short circuit;
s6, observing by using a high-definition video microscope;
s7, connecting a control card to perform function test after the FPC is bonded;
s8, the control card testing software can display the short circuit specific circuit, and the megger voltage value is selected according to the silver paste length, the line distance and line width relation of the silver paste circuit and the pointer contact time;
s9, placing two pointers of the megger on pin pins of two short-circuit channels corresponding to the FPC, so that poor micro short circuit can be eliminated;
and S10, measuring by using a multimeter.
2. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation step in S1, the model of the multimeter is: VICTOR VC9807A +, megohmmeter model number: VICTOR VC60B +, model number for high definition video microscope: TTL, HK, 15-45 times.
3. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation step in S3, the voltage values are: 250/500/1000 VDC.
4. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation procedure in S4, the megger voltage is adjusted to 500VDC and the contact time is not more than 2S.
5. The process for eliminating micro short circuit in functional chip production by using megohmmeter as claimed in claim 1, comprising the following steps: according to the operation procedure in S6, if there is still any impurity, the operation procedures from S2 to S6 are repeated until there is no impurity, and the process proceeds to the next step.
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| CN114980543A (en) * | 2022-05-31 | 2022-08-30 | 江西合力泰科技有限公司 | Method for repairing conductive silver circuit fine short circuit after laser etching |
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| CN101286468A (en) * | 2007-04-12 | 2008-10-15 | 索尼株式会社 | Method of manufacturing substrate, substrate manufacturing system, and method of manufacturing display |
| CN102832154A (en) * | 2012-09-21 | 2012-12-19 | 蚌埠玻璃工业设计研究院 | Method used for detecting and repairing leakage defect of film solar battery |
| CN203630266U (en) * | 2013-12-25 | 2014-06-04 | 广州市泰奇克光电科技有限公司 | Open- and short-circuit test fixture of large sheet of indium tin oxide glass |
| CN106876296A (en) * | 2017-01-03 | 2017-06-20 | 航天科工防御技术研究试验中心 | A kind of semiconductor device failure localization method |
| CN108538739A (en) * | 2017-03-06 | 2018-09-14 | 兴城科技股份有限公司 | Method and equipment for detecting defects of thin film transistor panel |
-
2020
- 2020-07-07 CN CN202010646046.6A patent/CN111863628B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6057221A (en) * | 1997-04-03 | 2000-05-02 | Massachusetts Institute Of Technology | Laser-induced cutting of metal interconnect |
| CN101286468A (en) * | 2007-04-12 | 2008-10-15 | 索尼株式会社 | Method of manufacturing substrate, substrate manufacturing system, and method of manufacturing display |
| CN102832154A (en) * | 2012-09-21 | 2012-12-19 | 蚌埠玻璃工业设计研究院 | Method used for detecting and repairing leakage defect of film solar battery |
| CN203630266U (en) * | 2013-12-25 | 2014-06-04 | 广州市泰奇克光电科技有限公司 | Open- and short-circuit test fixture of large sheet of indium tin oxide glass |
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