CN108538739A - Method and equipment for detecting defects of thin film transistor panel - Google Patents
Method and equipment for detecting defects of thin film transistor panel Download PDFInfo
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- CN108538739A CN108538739A CN201710367799.1A CN201710367799A CN108538739A CN 108538739 A CN108538739 A CN 108538739A CN 201710367799 A CN201710367799 A CN 201710367799A CN 108538739 A CN108538739 A CN 108538739A
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- 230000007547 defect Effects 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 230000002159 abnormal effect Effects 0.000 claims abstract description 46
- 230000002950 deficient Effects 0.000 claims abstract description 33
- 238000001514 detection method Methods 0.000 claims description 47
- 238000001931 thermography Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000523 sample Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 7
- 238000007689 inspection Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 230000008439 repair process Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a method and equipment for detecting defects of a Thin Film Transistor (TFT) panel, wherein the method comprises the steps of applying voltage to a circuit of the panel, wherein the circuit comprises a plurality of positions, scanning the positions by using a thermal imager to obtain a plurality of temperature image data of the positions, comparing the temperature image data with normal temperature image data to detect abnormal image data, and marking all the positions corresponding to the abnormal images as defective positions when judging that the temperature of the corresponding positions represented by the abnormal image data is higher than a user set value so as to be beneficial to carrying out subsequent processes.
Description
Technical field
The present invention relates to a kind of detection method of thin-film transistor display panel defect and detection device more particularly to a kind of utilizations
The defect inspection method and detection device that thermal imaging system is scanned the circuit on panel.
Background technology
The panel industry in Taiwan is with thin film transistor (TFT) (Thin-Film Transistor, TFT) liquid crystal display at present
Based on (Liquid Crystal Display, LCD), a piece of TFT panel and another colored filter (Color are utilized
Filter, CF) fit after, then pour into liquid crystal and formed.Its technique includes leading portion array (Array) technique and back segment panel group
(Cell) technique is filled, and TFT panel (Panel) is during making, it is necessary to first it is lacked using a kind of electrical detection equipment
It falls into and is detected, to ensure the quality of product without anxiety.
It is using a biography referring to Fig. 1, showing the contactless detection technique for 10 defect of a TFT panel
Feel head (sensor head) 11 and be used as a feeding electrode, and applies about 500V's (being set depending on product and user) using alternating current
Voltage is to a circuit 12, and sensing head 11 maintains one section of 150 μm~100 μm distance DP between circuit 12, that is, utilizes this
Then the air in space generates small induced current as medium using capacitance principle, and incude its Weak current it
Afterwards, by a contactless receiving electrode 13 and 14 amplified signal of an amplifier, you can export corresponding voltage.Work as detection
Go out when circuit 15 occurs signal intensity SC as shown in Figure 2 to get with detect in circuit 15 have this broken string (Open) or
The position 20 of the defect (Defect) of short-circuit (Short).
It is using positioned at spy referring to Fig. 3, showing another contact measurement technology to 30 defect of a TFT panel
A probe (Probe) 31 one feeding electrode of conduct on needle platform (Prober), and utilization direct current (DC) application about 20V (depending on
Product and user's setting) voltage to a circuit 32, and this probe 31 and circuit 32 are the voltage being in direct contact with induction line
Or electric current, it is used as a receiving electrode and 34 amplified signal of an amplifier by another probe 33.When detecting that circuit 32 occurs
To get to detect that circuit 35 is lacking with this broken string (Open) or short-circuit (Short) when signal intensity SC as shown in Figure 4
Position (Defect) 40 is fallen into, this is a kind of most normal practice.
It is using a spy referring to Fig. 5, showing another contact measurement technology to 50 defect of a TFT panel
Needle 51 is used as a feeding electrode, and applies voltages to a circuit 52 using alternating current, and probe 51 is in direct contact with circuit 52,
But then it is changed to a contactless receiving electrode 53 and 54 amplified signal of an amplifier in the part of receiving electrode.
However three of the above detection mode still has the shortcomings that it can not overcome, including：The broken string of periphery circuit and short circuit lack
One for falling into, driving IC line defcts (GOA), pixel region circuit breaking and circuit defect and circuit 61,62 as shown in FIG. 6 is micro- disconnected
Four kinds of defect of line 63 etc., wherein micro- broken string 63 may be the impurity such as some particles (Particle) and caused by, script is
Belong to some of pattern (Pattern), cleaned machine cleans and removes and fall, as one driving voltage V of application to circuit 61,62
When (dotted line DR indicate current direction), since electric current is not yet interrupting but is lacking micro- broken string that is a sheet of and being only left a silk
Be still to flow to obtain in the past at 63, therefore can not be detected in a normal mode, but micro- broken string 63 be in subsequent technique or
Be after product is made after user is used for a long time will likely because of too strong high drive it and collapse or break immediately.
Four kinds of above-mentioned defects at Array sections and are not easy to detect, it will usually just find to lack in Cell sections of lighting websites
Fall into, though and can detect defect in Cell section point light stations, the yield repaired is relatively low.Moreover the defect of broken string is repaiied in panel
It is that can not be repaired to mend station (Cell Repair), because the defect of broken string need to be in the laser chemical vapor deposition in Array sections
(Laser CVD) Duan Caike is repaired, though it can be repaired in Cell Repair as the defect of short circuit, relative to
Array sections, be relatively low in the success rate of this Cell Repair repairing.
Due to this reason, how to solve the problems, such as that four kinds of defect detections are not easy at Array sections, are dedicated to reality through inventor
After testing, test and studying, a kind of detection method and detection device of thin-film transistor display panel defect are obtained finally, in addition to effectively
It detects in the outer of Array section of four kinds of defects, can also have both the effect of yield is repaired in raising.That is, the class of the invention to be solved
It is entitled how to overcome the problems, such as that broken string and circuit defect in Array sections of circuit are not easy to detect, and make the broken string of circuit
And circuit defect can be repaired at Array sections, in addition how overcome the problems, such as that depositing defective position need to be positioned, with
And how to overcome the problems, such as the defective locations such as to repair according to repairing path.
Invention content
The present invention discloses a kind of detection method of thin film transistor (TFT) (TFT) panel defect, including applies voltages to the face
The circuit of plate scans the multiple position, to obtain the multiple position wherein the circuit includes multiple positions using thermal imaging system
The more temperature image data set, and the more temperature image data are compared with normal temperature image data to examine
Abnormal image data are measured, when the temperature for judging the opposite position representated by the abnormal image data is set higher than user
Just it is to deposit defective position by all location marks corresponding with each abnormal image, in favor of carrying out when value
Subsequent technique.
In addition, from the viewpoint of according to major technique, invention additionally discloses a kind of detections of printed circuit board (PCB) defect
Method, including the circuit of the circuit board is applied voltages to, wherein the circuit includes multiple positions, institute is scanned using thermal imaging system
The multiple positions for stating circuit, to obtain the corresponding more temperature image data of each the multiple position, and by each phase
Corresponding more temperature image data are compared with normal temperature image data to detect abnormal image data, when the exception
It, just will be corresponding with the abnormal image when temperature of the specific position representated by image data is higher than user's setting value
The location mark is defective locations, in favor of carrying out subsequent technique.
Such as according to other feasible viewpoints, invention additionally discloses a kind of defect inspection methods of semiconductor, wherein described
Semiconductor has circuit, and the circuit includes that multiple positions measure each institute one by one the method includes making the circuit be powered
The temperature that rheme is set, to obtain more temperature image data of the multiple position, and by each more temperature image numbers
According to being compared with reference temperature image data to detect abnormal image, when each abnormal image temperature data with it is described
When the difference of reference temperature is more than user's setting value, just it is judged as each institute's rheme corresponding to the temperature data of each abnormal image
Defective locations are set to, in favor of carrying out subsequent technique.
The present invention may be whether a kind of detection semiconductor deposits defective equipment, wherein the semiconductor has line
Road, and the circuit includes multiple positions, the equipment includes an energization component, for making the circuit be powered, a measurement group
Part, the temperature for measuring each position one by one compare component with the temperature data and one that obtain each position, use
In being compared each temperature data with reference temperature image data to detect abnormal image, when each abnormal image
The difference of temperature data and reference temperature when being more than user's setting value, be just judged as each corresponding to each temperature data
The position is defective locations, in favor of carrying out subsequent technique.
Description of the drawings
Fig. 1 is the side view of the non-contact detection technology of well known TFT panel defect；
Fig. 2 is side view of detection technique when finding defect in Fig. 1；
Fig. 3 is the side view of the contact measurement technology of well known TFT panel defect；
Fig. 4 is side view of detection technique when finding defect in Fig. 3；
Fig. 5 is the contact of well known TFT panel defect and the side view of contactless mixed detection technology；
Fig. 6 is the vertical view of the regular link and the circuit with micro- disconnection defect of well known TFT panel；
Fig. 7 is the periphery circuit in the detection method of thin film transistor (TFT) (TFT) panel defect of present pre-ferred embodiments
Vertical view；
Fig. 8 is the vertical view of the defect between being present in periphery circuit；
Fig. 9 is according to defective locations coordinate and the vertical view of repairing path drafted；
Figure 10 is the photo at periphery circuit position with abnormal image after thermal imaging system scans；
Figure 11 is the vertical view that the thermal imaging system being installed on gantry structure is scanned and moves.
Specific implementation mode
In order to which well known four kinds of defects can be detected at Array sections, the present invention proposes thin film transistor (TFT) below
(TFT) detection method and detection device of panel defect.
Please refer to Fig. 3 and Fig. 7, show present pre-ferred embodiments a kind of thin film transistor (TFT) (TFT) panel 30 and its
Periphery circuit 71,72 in defect inspection method, including the use of probe 31 with the circuit of touch panel 30 (such as：Periphery circuit
71,72), and then the circuit is applied voltages to, the voltage comes from energization component 301, and wherein circuit 72 includes multiple positions
Set 721,722, multiple positions 721,722 scanned using thermal imaging system (Thermal imager) 75, with obtain multiple positions 721,
722 more temperature image data, and the more temperature image data are compared with normal temperature image data with
Detect abnormal image data, when judge representated by the abnormal image data opposite position (such as：Position 722)
When temperature is higher than user's setting value, be just by all location marks corresponding with each abnormal image deposit it is defective
Position (such as：Position 722), in favor of carrying out subsequent technique.
The circuit is other than it can be periphery circuit, or driving IC circuits or pixel region circuit, and it is described
Depositing defective position has disconnection defect, circuit defect or micro- disconnection defect.The normal temperature image data corresponds to institute
User's setting value is stated, the driving IC circuits use array substrate gate driver technology (Gate Driver on Array, GOA)
It is made.
Referring to Fig. 8, between showing periphery circuit 81,82,83, wherein there are defective 84,85.Referring to Fig. 9, behaviour
Author deposits defective location position and goes out coordinate to described, the coordinate for the subsequent technique positioning and draft repairing road
Diameter 91,92 (as shown in the dotted line range in figure), the detection method further include scarce according to having described in 91,92 pairs of repairing path
Sunken position carries out laser (Laser) and repairs.Referring to Fig. 10, being shone for image of the periphery circuit after the detection scanning of thermal imaging system 75
Piece, on right side there are one the protrusion circuit of white key shape, around show red, that is, represent the line temperature of the position
It is abnormal.
1 is please referred to Fig.1, shows that there are two thermal imaging systems 111 for installing on gantry structure 110, first by product 112 (in figure
Be represented by dotted lines) load on workbench 113, probe can contact product 112 circuit, a left side for X-axis stroke (Stage X)
Right arrow direction is the direction that scanner uni is moved to the left to the right of thermal imaging system 111, and the mode that probe (Prober) 114 is set up need to regard
Depending on the circuit design of product, and 115, microscope (Micro Scope) is installed in left side, is respectively filled in upper right side and lower right
Left and right double-head arrow and upper and lower double-head arrow equipped with focusing contraposition camera (Alignment Camera) 116, and in figure all respectively refer to
The moving direction of relevant device is shown.
The design concept of the present invention is the fuel factor using electric current：When free electron flows, atom (refers to atomic nucleus and its
The electronics fettered) do not move, reciprocal vibration is only done on fixed lattice position.When electronics is in flow process,
Collision can be generated with atom, as a result the kinetic energy of electronics is reduced, and the vibration of atom is made to aggravate, therefore the temperature of conducting wire is made to increase,
Here it is the fuel factors of electric current.
In addition, the principle of resistance is：Free electron because collision so that movement rate slow down, just look like that flow encounters obstacle
Object is the same by drag braking, we claim conducting wire to have resistance.Moreover, Ohm's law is：German scholar ohm in 1826
(1789-1854) has found that the voltage at conductor both ends is directly proportional with electric current therein is flowed through, this relationship is known as Ohm's law.Resistance
Unit is known as ohm (ohm, symbol Ω), 1 ohm=1 volt/ampere or 1 Ω=1V/A.U=IR.With regard to energy viewpoint and
Speech, electric current flow through generated thermal energy when conductor, are actually transformed by electric energy.It is described if the resistance of conductor is R
Conductor by the electrical power P of consumed electric energy can indicate as follows using Ohm's law because of electric current with resistance：P=I2R=IU.From
Above formula can be seen that, with identical electric current by the conductor of different resistance, generated thermal energy and resistance are directly proportional.
The present invention utilizes above-mentioned principle, and applying voltage in TFT panel periphery circuit, (voltage need to regard each product circuit resistance value
It is adjusted), so that circuit is generated thermal energy.Regular link can be because of resistance value difference with anomalous line, and then generates the difference on thermal energy
It is different, therefore this difference is utilized to capture defective locations.
The detection mode of the present invention is also applied for printed circuit board, the detection method of printed circuit board (PCB) defect
Circuit including applying voltages to the circuit board, wherein the circuit includes multiple positions, using thermal imaging system, (such as Fig. 7 gets the bid
Number 75) to scan multiple positions of the circuit, to obtain the corresponding more temperature image data of each the multiple position,
And each corresponding more temperature image data are compared with normal temperature image data to detect abnormal image
Data, when the temperature of the specific position representated by the abnormal image data is higher than user's setting value, just will with it is described
The corresponding location mark of abnormal image is defective locations, in favor of carrying out subsequent technique.
Such as according to other feasible viewpoints, the present invention be also a kind of semiconductor (such as：TFT panel 30) defects detection
Method, wherein the semiconductor have circuit (such as：Periphery circuit 71,72), and circuit 72 includes multiple positions 721,722,
The method includes make circuit 72 be powered, measure one by one each position temperature (such as：The survey being scanned using thermal imaging system 75
Amount), to obtain more temperature image data of the multiple position 721,722, and by each more temperature image data
It is compared with reference temperature image data to detect abnormal image, when temperature data and the ginseng of each abnormal image
When examining temperature difference more than user's setting value, just it is judged as each position corresponding to the temperature data of each abnormal image
(such as：Position 722) it is defective locations, in favor of carrying out subsequent technique.Certainly, detection method at this time can also be including the use of
Thermal imaging system 75 is scanned to measure each position temperature, wherein the reference temperature image data is normal temperature image data.
The present invention may be a kind of detection semiconductor (such as：TFT panel 30) defective equipment whether is deposited, wherein institute
State semiconductor with circuit (such as：Periphery circuit 71,72), and circuit 72 includes multiple positions 721,722, the equipment includes
One energization component 301, for making circuit 72 be powered, a measurement assembly (such as：Thermal imaging system 75), for measuring each institute's rheme one by one
Set temperature, with obtain each position 721,722 temperature data and one compare component (such as：One application software is not shown in figure
Go out), for being compared each temperature data with reference temperature image data to detect abnormal image, when each described different
When the temperature data of normal image and the difference of the reference temperature are more than user's setting value, just it is judged as that each temperature data institute is right
Answer each position (such as：Position 722) it is defective locations, in favor of carrying out subsequent technique.
Embodiment
1. a kind of detection method of thin film transistor (TFT) (TFT) panel defect, including the circuit of the panel is applied voltages to,
The wherein described circuit includes multiple positions, the multiple position is scanned using thermal imaging system, to obtain more of the multiple position
Temperature image data, and the more temperature image data are compared with normal temperature image data to detect exception
Image data, when the temperature for being judged as the opposite position representated by the abnormal image data is higher than user's setting value, just
It is to deposit defective position by all location marks corresponding with each abnormal image, in favor of carrying out follow-up work
Skill.
2. detection method as described in Example 1 further includes contacting the circuit using probe, and then apply the electricity
Pressure.
3. the detection method as described in embodiment 1 or 2, wherein the position for having defect has coordinate, the coordinate
For the subsequent technique positioning and draft repairing path.
4. the detection method as described in any embodiment in Examples 1 to 33 further includes according to the repairing path to described
Defective locations carry out laser preparing.
5. the detection method as described in any embodiment in Examples 1 to 44, wherein the circuit is periphery circuit, driving
IC circuits or pixel region circuit, and it is described deposit defective position have disconnection defect, circuit defect or micro- disconnection defect.
6. the detection method as described in any embodiment in Examples 1 to 55, wherein the normal temperature image data corresponds to
In user's setting value, the driving IC circuits are made using array substrate gate driver technology (GOA).
7. a kind of detection method of printed circuit board (PCB) defect, including the circuit of the circuit board is applied voltages to,
Described in circuit include multiple positions, multiple positions of the circuit are scanned using thermal imaging system, to obtain each the multiple position
Corresponding more temperature image data, and by each corresponding more temperature image data and normal temperature image data
It is compared to detect abnormal image data, the temperature of the specific position representated by the abnormal image data is higher than
Just it is defective locations by the location mark corresponding with the abnormal image when user's setting value, it is follow-up in favor of carrying out
Technique.
8. a kind of defect inspection method of semiconductor, wherein the semiconductor has circuit, and the circuit includes multiple
Position measures the temperature of each position, to obtain the multiple position one by one the method includes making the circuit be powered
More temperature image data, and each more temperature image data are compared with reference temperature image data to detect
Go out abnormal image, when the difference of the temperature data of each abnormal image and the reference temperature is more than user's setting value, just sentences
Each position corresponding to the temperature data to break as each abnormal image is defective locations, in favor of carrying out subsequent technique.
9. detection method as described in Example 8 further includes being scanned using thermal imaging system to measure the temperature of each position,
The wherein described reference temperature image data is normal temperature image data.
10. whether a kind of detection semiconductor deposits defective equipment, wherein the semiconductor has circuit, and the circuit
Including multiple positions, the equipment includes an energization component, for making the circuit be powered, a measurement assembly, for surveying one by one
The temperature for measuring each position compares component with the temperature data and one that obtain each position, is used for each temperature
Data are compared with reference temperature image data to detect abnormal image, the temperature data when each abnormal image and institute
When stating the difference of reference temperature more than user's setting value, just it is judged as that each position corresponding to each temperature data is defect
Position, in favor of carrying out subsequent technique.
In conclusion the present invention can scan the multiple position with a new-type design by using thermal imaging system, and obtain
Obtain has temperature abnormal image data, and the mould of the coordinate analysis of the defective locations used occur on the circuit of energization
Formula, the effect of capable of realizing the positioning applied to subsequent technique really and draft repairing path.Therefore, every to be familiar with this skill
Personage, all can not depart from the claims in the present invention protection domain Nei Renshi craftsman think and carry out it is all as modify.
Claims (10)
1. a kind of detection method of thin-film transistor display panel defect, which is characterized in that including：
The circuit of the panel is applied voltages to, wherein the circuit includes multiple positions；
The multiple position is scanned using thermal imaging system, to obtain more temperature image data of the multiple position；And
The more temperature image data are compared with normal temperature image data to detect abnormal image data, when sentencing
It, just will be with each exception when breaking the temperature for the opposite position representated by the abnormal image data higher than user's setting value
The corresponding all location marks of image are to deposit defective position, in favor of carrying out subsequent technique.
2. detection method according to claim 1, which is characterized in that
Further include contacting the circuit using probe, and then apply the voltage.
3. detection method according to claim 1, which is characterized in that
Described to deposit defective position with coordinate, the coordinate is used for the positioning of the subsequent technique and drafts repairing path.
4. detection method according to claim 3, which is characterized in that
Further include depositing defective position progress laser preparing to described according to the repairing path.
5. detection method according to claim 1, which is characterized in that
The circuit is periphery circuit, driving IC circuits or pixel region circuit, and described deposit defective position there is broken string to lack
Sunken, circuit defect or micro- disconnection defect.
6. detection method according to claim 5, which is characterized in that
The normal temperature image data corresponds to user's setting value,
The driving IC circuits are made using array substrate gate driver technology.
7. a kind of detection method of defect of printed circuit board, which is characterized in that including：
The circuit of the circuit board is applied voltages to, wherein the circuit includes multiple positions；
Multiple positions that the circuit is scanned using thermal imaging system, to obtain the corresponding more temperature images of each the multiple position
Data；And
Each corresponding more temperature image data are compared with normal temperature image data to detect abnormal image
Data, when the temperature of the specific position representated by the abnormal image data is higher than user's setting value, just will with it is described
The corresponding location mark of abnormal image is defective locations, in favor of carrying out subsequent technique.
8. a kind of defect inspection method of semiconductor, wherein the semiconductor has circuit, and the circuit includes multiple positions,
The method is characterised by comprising：
The circuit is set to be powered；
The temperature for measuring each position one by one, to obtain more temperature image data of the multiple position；And
Each more temperature image data are compared with reference temperature image data to detect abnormal image, Dang Gesuo
When the temperature data for stating abnormal image and the difference of the reference temperature are more than user's setting value, just it is judged as each abnormal image
Temperature data corresponding to each position be defective locations, in favor of carry out subsequent technique.
9. detection method according to claim 8, which is characterized in that
Further include being scanned to measure the temperature of each position, wherein the reference temperature image data is normal using thermal imaging system
Temperature image data.
10. whether a kind of detection semiconductor deposits defective equipment, wherein the semiconductor has circuit, and the circuit includes
Multiple positions, the equipment are characterised by comprising：
Energization component, for making the circuit be powered；
Measurement assembly, the temperature for measuring each position one by one, to obtain the temperature data of each position；And
Component is compared, for being compared each temperature data with reference temperature image data to detect abnormal image,
When the difference of the temperature data of each abnormal image and the reference temperature is more than user's setting value, just it is judged as each temperature
Each position corresponding to degrees of data is defective locations, in favor of carrying out subsequent technique.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106107285A TWI633300B (en) | 2017-03-06 | 2017-03-06 | Method for detecting defects of thin-film transistor panel and device thereof |
| TW106107285 | 2017-03-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108538739A true CN108538739A (en) | 2018-09-14 |
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ID=60479809
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|---|---|---|---|
| CN201710367799.1A Pending CN108538739A (en) | 2017-03-06 | 2017-05-23 | Method and equipment for detecting defects of thin film transistor panel |
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| Country | Link |
|---|---|
| CN (1) | CN108538739A (en) |
| HK (1) | HK1256934A1 (en) |
| TW (1) | TWI633300B (en) |
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| CN109164615A (en) * | 2018-10-31 | 2019-01-08 | 深圳市华星光电半导体显示技术有限公司 | A kind of detection method and device of tft array substrate |
| CN109545115A (en) * | 2018-12-04 | 2019-03-29 | 深圳市华星光电半导体显示技术有限公司 | Device of testing electrical properties and device of testing electrical properties cross hairs precise defect location method |
| CN111863628A (en) * | 2020-07-07 | 2020-10-30 | 广东泰奇克光电科技有限公司 | Process method for eliminating micro short circuit in production of functional chip by using megohmmeter |
| CN113075230A (en) * | 2021-03-26 | 2021-07-06 | 重庆烯宇新材料科技有限公司 | Large-size lighting display appearance inspection method |
| CN113295546A (en) * | 2021-05-10 | 2021-08-24 | 武汉精测电子集团股份有限公司 | FPC microcircuit bending damage degree verification method and device and electronic equipment |
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| TWI661189B (en) * | 2017-09-30 | 2019-06-01 | 興城科技股份有限公司 | Method for detecting defects of thin-film transistor panel and device thereof |
| TWI634339B (en) * | 2017-11-21 | 2018-09-01 | 興城科技股份有限公司 | Method and apparatus for testing a tft panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109164615A (en) * | 2018-10-31 | 2019-01-08 | 深圳市华星光电半导体显示技术有限公司 | A kind of detection method and device of tft array substrate |
| CN109545115A (en) * | 2018-12-04 | 2019-03-29 | 深圳市华星光电半导体显示技术有限公司 | Device of testing electrical properties and device of testing electrical properties cross hairs precise defect location method |
| CN111863628A (en) * | 2020-07-07 | 2020-10-30 | 广东泰奇克光电科技有限公司 | Process method for eliminating micro short circuit in production of functional chip by using megohmmeter |
| CN111863628B (en) * | 2020-07-07 | 2022-04-29 | 广东泰奇克光电科技有限公司 | Process method for eliminating micro short circuit in production of functional chip by using megohmmeter |
| CN113075230A (en) * | 2021-03-26 | 2021-07-06 | 重庆烯宇新材料科技有限公司 | Large-size lighting display appearance inspection method |
| CN113295546A (en) * | 2021-05-10 | 2021-08-24 | 武汉精测电子集团股份有限公司 | FPC microcircuit bending damage degree verification method and device and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| HK1256934A1 (en) | 2019-10-04 |
| TWI633300B (en) | 2018-08-21 |
| TW201732272A (en) | 2017-09-16 |
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