TW201732272A - Method for detecting defects of thin-film transistor panel and device thereof - Google Patents

Abstract

The present invention discloses a method for detecting defects in the thin-Film transistor (TFT) panel and a device thereof. The method includes applying a voltage to circuits of the panel, wherein each circuit includes plural positions; utilizing a thermal imager to scan the plural positions to obtain plural temperature image data of the plural positions, and comparing the plural temperature image data with a normal temperature image data to detect an abnormal image datum. When the temperature of a specific position corresponding to the abnormal image datum is determined to be higher than a user's default value, the position corresponding to the abnormal image datum is labeled as a position with defect so that the following process proceeds.

Description

Method for detecting defects of thin film transistor panel and device thereof

The invention relates to a method and a device for detecting defects of a thin film transistor panel, in particular to a defect detecting method and a device for scanning a line on a panel by using a thermal imager.

At present, the panel industry in Taiwan is mainly a Thin-Film Transistor (TFT) liquid crystal display (LCD), which uses a TFT panel to attach to another color filter (CF). After the combination, the liquid crystal is poured again to form. The process includes the Array segment and the panel assembly. The TFT panel must be tested with an electrical inspection device to ensure the quality of the product. Innocent. Referring to the first figure, a non-contact detection technique for a TFT panel 10 defect is shown, using a sensor head 11 as a power supply electrode and applying about 500 V using an alternating current (depending on the product and use). The voltage is set to a line 12, and the distance between the sensor head 11 and the line 12 is maintained at a distance of 150 to 100 μm, that is, the air in the space is used as a medium, and then the capacitive principle is used to generate a minute induced current. And sensing its micro After a small current, the signal is amplified by a non-contact receiving electrode 13 and an amplifier 14, and the corresponding voltage is output. When it is detected that the line 15 has a signal change SC as shown in the second figure, the position 20 of the line 15 having the open or short defect (Defect) is detected.

Referring to the third figure, another contact detection technique for the defect of a TFT panel 30 is shown. A probe (Probe) 31 on the probe station is used as a power supply electrode, and DC power is utilized ( DC) applies a voltage of about 20V (depending on the product and the user setting) to a line 32, and the probe 31 is in direct contact with the line 32 to sense the voltage or current of the line, passing through the other probe 33 as a receiving electrode. And an amplifier 34 amplifies the signal. When it is detected that the line 32 has a signal change SC as shown in the fourth figure, it is detected that the line 35 is a defect (Defect) position 40 having the open or short (Short), which is a kind The most normal practice. Referring to FIG. 5, another contact detection technique for defect of a TFT panel 50 is shown. A probe 51 is used as a power supply electrode, and a voltage is applied to a line 52 by using alternating current, and the probe 51 and the line 52 are connected. It is in direct contact, but the portion of the receiving electrode is changed to a non-contact receiving electrode 53 and an amplifier 54 to amplify the signal.

However, the above three detection methods still have their insurmountable shortcomings, including: disconnection and short-circuit defects of peripheral lines, drive IC line defects (GOA), pixel line breaks and short-circuit defects and lines as shown in Figure 6. 61, 62 one of the micro-broken wire 63 defects, etc., wherein the micro-broken wire 63 may be caused by some particles (Particle) and other impurities, which originally belong to the figure Part of the pattern is stripped and dropped by the cleaning machine. When a driving voltage V is applied to the lines 61 and 62 (the dotted line DR indicates the current direction), since the current is not interrupted, a large piece has been missing. Only a trace of the micro-broken line 63 is still flowing, so it cannot be detected in the normal mode, but the micro-broken line 63 is in the subsequent process or after being used for a long time by the user after being made into a product. It will probably collapse or break off because it is driven by a high voltage.

The above four defects are not easy to detect in the Array segment. Usually, defects are found in the lighting station of the Cell segment, but the defect can be detected in the Cell segment lighting station, but the repair yield is low. . Moreover, the defect of the wire breakage cannot be repaired by the panel repair station (Cell Repair), because the defect of the wire breakage needs to be repaired in the laser CVD section of the Array section, and the defect of the short circuit is It can be patched in Cell Repair, but the success rate of repair in this repair is relatively low compared to the Array segment.

For the sake of the job, how to solve the problem that the four defects are not easy to detect in the Array segment, after the inventor's commitment to the experiment, test and research, finally obtained a method and device for detecting the defects of the thin film transistor panel, in addition to effectively In addition to the four defects in the Array segment, it also has the effect of improving the repair rate. That is to say, the problem to be solved by the present invention is how to overcome the problem that the disconnection and short-circuit defects of the line in the Array segment are not easily detected, so that the disconnection and short-circuit defects of the line can be repaired in the Array segment, and how to overcome The problem of the location where the defect exists needs to be located, and how to overcome the problem of repairing the defect location according to the repair path.

The invention discloses a method for detecting a defect of a thin film transistor (TFT) panel, comprising applying a voltage to a circuit of the panel, wherein the circuit comprises a plurality of positions, and scanning the plurality of positions with a thermal imager to obtain the complex number a plurality of temperature image data of the position, and detecting an abnormal image data by comparing the plurality of temperature image data with a normal temperature image data, and determining that the temperature of one of the corresponding positions of the abnormal image data is higher than When a user sets a value, all the positions corresponding to each of the abnormal images are marked as having a defective position, thereby facilitating a subsequent process.

According to a main technical point of view, the present invention also discloses a method for detecting a printed circuit board (PCB) defect, comprising applying a voltage to a circuit of the circuit board, wherein the circuit includes a plurality of locations, utilizing a thermal image The device scans a plurality of positions of the line to obtain a plurality of temperature image data corresponding to one of the plurality of positions, and compares the corresponding plurality of temperature image data with a normal temperature image data to detect an abnormal image. The data, when the temperature of the abnormal image data is higher than a user setting value, the position corresponding to the abnormal image is marked as a defect position, thereby facilitating a subsequent process.

The present invention also discloses a semiconductor defect detecting method, wherein the semiconductor has a line, and the line includes a plurality of positions, the method includes energizing the line, and measuring the temperature of each of the positions one by one. To obtain a plurality of temperature images of the plurality of locations Data, and comparing each of the plurality of temperature image data and a reference temperature image data to detect an abnormal image, and when the difference between the temperature data of the abnormal image and the reference temperature is greater than a user setting value, determining each Each of the locations corresponding to the temperature data is a defect location, which facilitates a subsequent process.

The device may also be a device for detecting whether a semiconductor has a defect, wherein the semiconductor has a line, and the line includes a plurality of positions, the device includes an energizing element for energizing the line, and a measuring component for Measure the temperature of each position one by one to obtain temperature data of each of the positions, and a comparison component for comparing each of the plurality of temperature image data and a reference temperature image data to detect an abnormal image, When the difference between the temperature data of the abnormal image and the reference temperature is greater than a user setting value, it is determined that each position corresponding to each temperature data is a defect position, thereby facilitating a subsequent process.

10‧‧‧TFT panel

11‧‧‧ sensor head

12‧‧‧ lines

DP‧‧‧ distance

13‧‧‧ receiving electrode

14‧‧ ‧Amplifier

15‧‧‧ lines

20‧‧‧ Location of defects

30‧‧‧ panel

301‧‧‧Electric components

31‧‧‧ probe

32‧‧‧ lines

33‧‧‧Probe

34‧‧‧Amplifier

35‧‧‧ lines

40‧‧‧ Location of defects

50‧‧‧TFT panel

51‧‧‧ probe

52‧‧‧ lines

53‧‧‧ receiving electrode

54‧‧‧Amplifier

61, 62‧‧‧ lines

63‧‧‧micro disconnection

71, 72‧‧‧ peripheral lines

721, 722‧‧‧ position

75‧‧‧ Thermal Imager

81, 82, 83‧‧‧ peripheral lines

84, 85‧‧‧ Defects

91, 92‧‧‧ repair path

110‧‧‧ gantry structure

111‧‧‧ Thermal Imager

112‧‧‧Products

113‧‧‧Working platform

114‧‧‧Probe station

115‧‧‧Microscope

116‧‧‧focusing alignment camera

The first figure is a side view of a conventional non-contact detection technology for TFT panel defects; the second picture is a side view of the detection technique in the first figure when a defect is found; the third picture is a conventional Side view of the touch detection technology of the TFT panel defect; the fourth picture: the side view of the detection technology in the third figure when the defect is found Schematic diagram; fifth diagram: a side view of a conventional touch panel and non-contact hybrid detection technology for TFT panel defects; and a sixth diagram: a normal line of a conventional TFT panel and a line having a micro disconnection defect FIG. 7 is a top plan view showing a peripheral circuit in a method for detecting defects of a thin film transistor (TFT) panel according to a preferred embodiment of the present invention; and FIG. 8 is a top plan view showing defects existing between peripheral lines; The ninth picture is a top view of the repair path based on the coordinates of the defect position; the tenth picture is a picture of the part of the peripheral line that has an abnormal image after being scanned by the thermal imager; and the eleventh picture: is installed in A schematic view of the thermal imager on the gantry structure for scanning and moving.

In order to allow the conventional four defects to be detected in the Array segment, the present invention proposes the following method and apparatus for detecting defects in a thin film transistor (TFT) panel.

Please refer to the third and seventh figures, showing a peripheral circuit 71, 72 in a thin film transistor (TFT) panel 30 and a defect detecting method thereof according to a preferred embodiment of the present invention, including using the probe 31 to contact the panel 30. a line (eg, peripheral lines 71, 72) that in turn applies a voltage to the line, The voltage is from the energization element 301, wherein the line 72 includes a plurality of positions 721, 722, and a plurality of positions 721, 722 are scanned by a thermal imager 75 to obtain a plurality of temperature image data of the plurality of positions 721, 722, and the plurality of pens. The temperature image data and the normal temperature image data are used to detect abnormal image data, and when it is determined that the temperature corresponding to the abnormal image data (for example, position 722) is higher than the user setting value, the image is about to be associated with each abnormal image. All corresponding locations are marked as defective locations (eg, location 722) for subsequent processing.

In addition to being a peripheral line, the line may also be a driver IC line or a pixel area line, and the location where the defect exists has a wire break defect, a short circuit defect or a micro wire break defect. The normal temperature image data corresponds to the user setting value, and the driving IC circuit is fabricated by using a Gate Driver on Array (GOA). Referring to the eighth figure, there is shown between the peripheral lines 81, 82, 83 in which defects 84, 85 are present. Referring to the ninth figure, the operator calibrates the coordinates for the position where the defect is present, and the coordinate is used for the positioning of the subsequent process and the proposed repair paths 91, 92 (as indicated by the dotted line in the figure), the detection The method further includes performing laser repair on the location of the defect in accordance with the repair path 91, 92. Referring to the tenth figure, the scanned image of the peripheral line is detected by the thermal imager 75. On the right side, there is a white key-shaped protruding line, and the surrounding area is red, that is, the line temperature representing the position is abnormal.

Referring to FIG. 11 , it is shown that two thermal imagers 111 are mounted on the gantry structure 110, and the product 112 is first introduced. Loaded on the work platform 113, the probe can contact the line of the product 112, and the left and right arrow directions of the X-axis stroke (Stage X) are the direction in which the camera 111 scans to the right and moves to the left, Prober The 114 erection method depends on the product line design, while the Micro Scope 115 is mounted on the left side, and the Alignment Camera 116 is mounted on the upper right and lower right sides, respectively. The left and right double arrows and the upper and lower double arrows respectively indicate the moving direction of the related device. The design concept of the present invention utilizes the thermal effect of current: when free electrons flow, the atoms (the nucleus and the electrons it binds) do not move, but only reciprocate vibrations at a fixed lattice position. When electrons flow, they collide with atoms, and as a result, the kinetic energy of the electrons decreases, and the vibration of the atoms is aggravated, thus increasing the temperature of the wires, which is the thermal effect of the current.

The principle of resistance is that the rate at which the free electrons move due to the collision slows down as if the water flow encounters an obstacle and the resistance is decelerated. We call the wire have a resistance. And Ohm's law: In 1826, the German scholar Ohm (1789-1854) found that the voltage across the conductor is proportional to the current flowing through it. This relationship is called Ohm's law. The unit of resistance is called ohms (ohm, symbol Ω), 1 ohm = 1 volt / amp, or 1 Ω = 1 V / A. V=I R. From the energy point of view, the thermal energy generated by the current flowing through the conductor is actually converted from electrical energy. If the resistance of the conductor is R, the electrical current P of the conductor due to the passage of current through the electrical current, using Ohm's law, can be expressed as follows: P = I2 R = I V. It can be seen from the above equation that the heat generated by the conductors of different resistances with the same current is proportional to the resistance. The present invention utilizes the above principle to apply a voltage to a peripheral line of a TFT panel (electrical The pressure needs to be adjusted according to the resistance of each product line, so that the line generates heat energy. The normal line and the abnormal line will have differences in thermal energy due to the difference in resistance, so the difference is used to capture the defect position.

The detection method of the present invention is also applicable to a printed circuit board (PCB) defect detection method comprising applying a voltage to a circuit of the circuit board, wherein the circuit comprises a plurality of locations, using a thermal imager (eg In the seventh figure, the number is 75) scanning a plurality of positions of the line to obtain a plurality of temperature image data corresponding to one of the plurality of positions, and comparing the corresponding plurality of temperature image data with a normal temperature. The image data is used to detect an abnormal image data. When the temperature of the abnormal image data is higher than a user setting value, the position corresponding to the abnormal image is marked as a defect position. It is advantageous to carry out a follow-up process.

The present invention is also a defect detecting method of a semiconductor (for example, TFT panel 30) according to other viewpoints, wherein the semiconductor has a line (for example, peripheral lines 71, 72), and the line 72 includes a plurality of positions. 721, 722, the method includes energizing the line 72, measuring each of the position temperatures one by one (for example, measuring by scanning with a thermal imager 75) to obtain a plurality of temperature image data of the plurality of positions 721, 722, and comparing Each of the plurality of temperature image data and the reference temperature image data to detect an abnormal image, and when the difference between the temperature data of the abnormal image and the reference temperature is greater than a user setting value, determining that each temperature data corresponds to Each of the locations (e.g., location 722) is a defective location for facilitating a subsequent process. Of course, the detection method at this time The method further includes scanning with the thermal imager 75 to measure the temperature of each of the positions, wherein the reference temperature image data is a normal temperature image data.

The present invention may also be a device for detecting whether a semiconductor (e.g., TFT panel 30) has a defect, wherein the semiconductor has a line (e.g., peripheral lines 71, 72), and line 72 includes a plurality of locations 721, 722, the device including An energizing element 301 is used to energize the line 72, and a measuring component (for example, the thermal imager 75) is used to measure the temperature of each position one by one to obtain temperature data of each position 721, 722, and a comparison component ( For example, an application software (not shown) is configured to compare each of the plurality of temperature image data and a reference temperature image data to detect an abnormal image, and the temperature data of each of the abnormal images and the reference temperature When the difference is greater than a user setting value, it is determined that each position corresponding to the temperature data (for example, position 722) is a defect position, which facilitates a subsequent process.

Example

A method of detecting a defect in a thin film transistor (TFT) panel, comprising applying a voltage to a line of the panel, wherein the line includes a plurality of locations, and scanning the plurality of locations with a thermal imager to obtain the plurality of locations a plurality of temperature image data of the position, and detecting an abnormal image data by comparing the plurality of temperature image data with a normal temperature image data, and determining that the temperature of one of the corresponding positions of the abnormal image data is higher than one When the user sets the value, all the positions corresponding to each abnormal image are marked as the location where the defect exists, so as to facilitate a subsequent process.

2. The detection method as described in embodiment 1, further comprising using a probe The line is contacted and the voltage is applied.

3. The detection method according to embodiment 1 or 2, wherein the location where the defect exists has a target for positioning one of the subsequent processes and formulating a repair path.

4. The detecting method according to any one of the embodiments 1 to 3, further comprising: performing a laser repair on the defect position according to the repairing path.

5. The detecting method according to any one of embodiments 1 to 4, wherein the circuit is a peripheral line, a driving IC line or a pixel area line, and the position where the defect exists has a disconnection line. Defect, a short circuit defect or a micro disconnection defect.

6. The detecting method according to any one of embodiments 1 to 5, wherein the normal temperature image data corresponds to the user setting value, and the driving IC circuit adopts an array substrate gate driving technology (GOA). Made.

7. A method of detecting a printed circuit board (PCB) defect, comprising applying a voltage to a circuit of the circuit board, wherein the line includes a plurality of locations, and scanning a plurality of locations of the circuit with a thermal imager to obtain each One of the plurality of positions corresponds to the plurality of temperature image data, and the corresponding plurality of temperature image data and the normal temperature image data are compared to detect an abnormal image data, and the abnormal image data represents one of the specific image data. When the temperature of the position is higher than a user setting value, the position corresponding to the abnormal image is marked as a defect position, which facilitates a subsequent process.

A semiconductor defect detecting method, wherein the semiconductor has a line And the circuit includes a plurality of locations, the method comprising: energizing the line, measuring the temperature of each of the locations one by one to obtain a plurality of temperature image data of the plurality of locations, and comparing the plurality of temperature image data with the plurality of A reference temperature image data is used to detect an abnormal image. When the difference between the temperature data of the abnormal image and the reference temperature is greater than a user setting value, it is determined that each position corresponding to the temperature data is a defect position. , for the benefit of a follow-up process.

9. The method of detecting according to embodiment 8, further comprising: scanning with a camera to measure the temperature of each of the locations, wherein the reference temperature image data is a normal temperature image data.

10. A device for detecting whether a semiconductor has a defect, wherein the semiconductor has a line and the line comprises a plurality of locations, the device comprising an energizing element for energizing the line, a measuring component for measuring one by one Measure the temperature of each position to obtain temperature data of each of the positions, and a comparison component for comparing each of the plurality of temperature image data and a reference temperature image data to detect an abnormal image, and When the difference between the temperature data of the abnormal image and the reference temperature is greater than a user setting value, it is determined that each position corresponding to the temperature data is a defect position, thereby facilitating a subsequent process.

In summary, the present invention can accurately scan the plurality of positions by using a thermal imager in a new design, and obtain image data having an abnormal temperature on the energized line, and the coordinates of the defect position used. The mode of analysis can be applied to the positioning of subsequent processes and the effectiveness of the proposed repair path. Therefore, anyone who is familiar with this skill can be left to think. All kinds of modifications, but they are not removed as claimed.

31‧‧‧ probe

71,72‧‧‧ peripheral lines

73, 74‧‧‧ position

75‧‧‧ Thermal Imager

Claims (10)

A method for detecting a defect of a thin film transistor (TFT) panel, comprising: applying a voltage to a line of the panel, wherein the line includes a plurality of positions; scanning the plurality of positions with a thermal imager to Obtaining a plurality of temperature image data of the plurality of positions; and detecting an abnormal image data by comparing the plurality of temperature image data with a normal temperature image data, and determining one of the corresponding positions of the abnormal image data When the temperature is higher than a user setting value, all the positions corresponding to each abnormal image are marked as the location where the defect exists, so as to facilitate a subsequent process. The detection method of claim 1, further comprising using a probe to contact the line to apply the voltage. The detection method of claim 1, wherein the location of the defect has a target for positioning one of the subsequent processes and formulating a repair path. The detection method of claim 3, further comprising performing a laser repair on the defect location according to the repair path. The detecting method of claim 1, wherein the circuit is a peripheral circuit, a driving IC circuit or a pixel region, and the defective location has a wire break defect, a short circuit defect or A micro disconnection defect. The detection method described in claim 5, wherein the normal temperature is The image data is corresponding to the user setting value, and the driving IC circuit is fabricated by using an array of gate driver driving technology (Gate Driver on Array, GOA). A method of detecting a printed circuit board (PCB) defect, comprising: applying a voltage to a circuit of the circuit board, wherein the circuit includes a plurality of locations; scanning a plurality of locations of the circuit with a thermal imager to obtain each One of the plurality of positions corresponds to the plurality of temperature image data; and the corresponding plurality of temperature image data and the normal temperature image data are compared to detect an abnormal image data, and one of the abnormal image data represents When the temperature of the position is higher than a user setting value, the position corresponding to the abnormal image is marked as a defect position, which facilitates a subsequent process. A semiconductor defect detecting method, wherein the semiconductor has a line, and the line includes a plurality of positions, the method comprising: energizing the line; measuring the temperature of each of the positions one by one to obtain a plurality of temperature images of the plurality of positions And comparing the plurality of temperature image data and the reference temperature image data to detect an abnormal image, and when the difference between the temperature data of the abnormal image and the reference temperature is greater than a user setting value, determining each Each of the locations corresponding to the temperature data is a defect location, which facilitates a subsequent process. For example, the detection method described in claim 8 of the patent application includes the use of one The camera scans to measure the temperature of each position, wherein the reference temperature image data is a normal temperature image data. A device for detecting whether a semiconductor has a defect, wherein the semiconductor has a line, and the line includes a plurality of positions, the device includes: an energizing element for energizing the line; and a measuring component for measuring one by one Each of the positional temperatures to obtain temperature data of each of the positions; and a comparison component for comparing each of the plurality of temperature image data and a reference temperature image data to detect an abnormal image, and each of the abnormalities When the difference between the temperature data of the image and the reference temperature is greater than a user setting value, it is determined that each position corresponding to the temperature data is a defect position, thereby facilitating a subsequent process.