CN111823716A - 液体喷出头及其制造方法 - Google Patents

液体喷出头及其制造方法 Download PDF

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Publication number
CN111823716A
CN111823716A CN202010317747.5A CN202010317747A CN111823716A CN 111823716 A CN111823716 A CN 111823716A CN 202010317747 A CN202010317747 A CN 202010317747A CN 111823716 A CN111823716 A CN 111823716A
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Prior art keywords
recording element
substrate
element substrate
ejection head
liquid ejection
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CN202010317747.5A
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CN111823716B (zh
Inventor
高桥知广
中窪亨
斋藤昭男
佐藤武伟
枝克美
柴田武
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Canon Inc
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Canon Inc
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    • H01L23/3157Partial encapsulation or coating
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    • B41J2/01Ink jet
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    • B41J2/14016Structure of bubble jet print heads
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Abstract

液体喷出头及其制造方法。记录元件基板在第二面的处于液体供给口和记录元件基板的边缘之间的至少部分区域中结合到FPC,并且设置有配线导体和焊盘通过结合线彼此电连接的电连接部。

Description

液体喷出头及其制造方法
技术领域
本公开涉及具有用于喷出诸如墨等的液体的喷出口的液体喷出头及其制造方法。
背景技术
液体喷出设备设置有用于将诸如墨等的液体喷出到记录介质等上的液体喷出头。液体喷出头包括大量用于喷出液体的喷出口以及记录元件,各记录元件均被设置为用于喷出口中的对应的一个喷出口。记录元件通常形成在例如由半导体基板形成的记录元件基板的第一面上。记录元件基板还被称为半导体芯片。还可以在记录元件的同一记录元件基板上设置用于驱动记录元件的电路。液体喷出设备将触发液体喷出的电信号传递到安装于液体喷出头的记录元件基板。为此,将诸如柔性印刷电路(FPC)和带式自动结合(TAB(tapeautomated bonding))电路的具有柔性的柔性电配线基板连接至记录元件基板。此外,液体喷出头具有形成为将待被喷出的液体供给到记录元件的位置的液体供给路径,液体供给路径是从第二面到第一面贯穿记录元件基板的贯通孔。液体供给路径在记录元件基板的第二面上开口以提供液体供给口。
作为将电配线基板和记录元件基板彼此连接的方法,日本特开2008-120056号公报公开了一种将记录元件基板和电配线基板分别结合到支撑构件上然后通过使用金(Au)线的线结合将记录元件基板和电配线基板电结合的方法。日本特开2006-56243号公报公开了一种提供贯穿记录元件基板以将电配线从记录元件布线到记录元件基板的第二面的贯通配线并将形成在第二面上的电极和具有金属凸块的电配线基板结合从而建立电连接的方法。
根据日本特开2008-120056号公报中说明的方法,在将记录元件基板和电配线基板结合到支撑构件之后,记录元件基板和电配线基板彼此电连接,并且只有在建立电连接之后才能检查记录元件基板的电气特性。如果在检查电气特性时发现有缺陷的记录元件基板,则不仅必须废弃记录元件基板和电配线基板,而且还必须废弃与其结合的支撑构件,因此可能增加总的制造成本。日本特开2006-56243号公报中说明的方法需要形成贯穿由半导体基板形成的记录元件基板的贯通布线,并且利用导电材料涂覆贯通配线用的贯通孔的表面,因此需要许多额外的处理步骤并增加处理成本。另外,由于液体供给口形成在记录元件基板的第二面上,所以如果在第二面上建立了电连接,则记录元件基板上的焊盘和电极与电配线基板上的配置在第二面侧的配线彼此接近。因此,用于使记录元件基板和电配线基板彼此结合的粘接剂和用于保护电连接部的密封剂可能溢出到液体供给口并阻塞液体供给口。由于电连接部和液体供给口彼此靠近,所以会增大这种液体与电连接部等接触并引起电配线的腐蚀的风险。
发明内容
本公开的方面提供一种液体喷出头,其中,在保持记录元件基板和电配线基板之间的电连接部与液体供给口之间的距离的同时,记录元件基板和电配线基板可以在不结合到支撑构件的情况下彼此电连接。另一方面是提供一种液体喷出头的制造方法。
根据本公开的液体喷出头是如下液体喷出头,其包括:记录元件基板,其包括形成于第一面用于电连接的焊盘以及形成于与第一面相反的第二面的液体供给口;和柔性电配线基板,其包括配线导体,其中,记录元件基板在第二面中的液体供给口和记录元件基板的边缘之间区域的至少一部分区域与柔性电配线基板结合,并且液体喷出头具有配线导体和焊盘通过结合线彼此电连接的电连接部。
根据以下参照附图对示例性实施方式的说明,本公开的其它特征和方面将变得明显。
附图说明
图1A是用于示出示例性柔性印刷电路(FPC)的图。
图1B是用于示出柔性印刷电路(FPC)的图。
图2A是用于示出根据第一示例性实施方式的液体喷出头的示意性截面图。
图2B是用于示出根据第一示例性实施方式的液体喷出头的示意性截面图。
图2C是用于示出根据第一示例性实施方式的液体喷出头的示意性截面图。
图3是用于示出根据第一示例性实施方式的液体喷出头的平面图。
图4是用于示出根据第一示例性实施方式的液体喷出头的主要部分的示意性截面图。
图5是示例性流路构件的示意性截面图。
图6是示出制造液体喷出头的示例性过程的流程图。
图7A是示出根据第二示例性实施方式的记录元件基板的图。
图7B是示出根据第二示例性实施方式的记录元件基板的图。
图8A是用于示出记录元件基板和FPC的结合的图。
图8B是用于示出记录元件基板和FPC的结合的图。
图9A是用于示出根据第二示例性实施方式的液体喷出头的图。
图9B是用于示出根据第二示例性实施方式的液体喷出头的图。
图10A是示出根据第三示例性实施方式的记录元件基板的图。
图10B是示出根据第三示例性实施方式的记录元件基板的图。
图11A是用于示出记录元件基板和FPC的结合的图。
图11B是用于示出记录元件基板和FPC的结合的图。
图12是用于示出根据第三示例性实施方式的液体喷出头的图。
图13是示出根据第三示例性实施方式的记录元件基板的另一示例的立体图。
图14A是用于示出根据第四示例性实施方式的液体喷出头的图。
图14B是用于示出根据第四示例性实施方式的液体喷出头的图。
图14C是用于示出根据第四示例性实施方式的液体喷出头的图。
图14D是用于示出根据第四示例性实施方式的液体喷出头的图。
图15A是用于示出记录元件基板的另一示例的图。
图15B是用于示出记录元件基板的另一示例的图。
图15C是用于示出记录元件基板的另一示例的图。
图16A是用于示出记录元件基板的又一示例的图。
图16B是用于示出记录元件基板的又一示例的图。
图16C是用于示出记录元件基板的又一示例的图。
图17A是用于示出记录元件基板的还一示例的图。
图17B是用于示出记录元件基板的还一示例的图。
图17C是用于示出记录元件基板的还一示例的图。
图18A是用于示出FPC的结合到记录元件基板的位置的图。
图18B是用于示出FPC的结合到记录元件基板的另一位置的图。
图19A是用于示出记录元件基板的再一示例的图。
图19B是用于示出记录元件基板的再一示例的图。
图20A是用于示出根据第五示例性实施方式的记录元件基板的图。
图20B是用于示出根据第五示例性实施方式的记录元件基板的图。
图21A是用于示出记录元件基板和FPC的结合的图。
图21B是用于示出记录元件基板和FPC的结合的图。
图22A是用于示出根据第五示例性实施方式的液体喷出头的图。
图22B是用于示出根据第五示例性实施方式的液体喷出头的图。
图23A是用于示出根据第五示例性实施方式的液体喷出头的另一示例的图。
图23B是用于示出根据第五示例性实施方式的液体喷出头的又一示例的图。
图24是用于示出根据第五示例性实施方式的液体喷出头的还一示例的图。
具体实施方式
现在将根据附图详细说明本公开的许多实施方式、特征和方面。
在下文中,将参照附图说明本公开的实施方式。在说明根据本公开的液体喷出头之前,将首先说明下面说明的实施方式中使用的柔性电配线基板。尽管柔性电配线基板可以是柔性印刷电路(FPC)和TAB电路中的任一者,但是下面将说明FPC。图1A和图1B是示出FPC的构造的图。图1A是平面图,图1B是沿着图1A中的线B-B截取的截面图。在图1A和图1B中,左右方向对应于作为柔性电配线基板2的FPC 2的长度方向,并且FPC 2以其前端部指向左侧的方式定向。
FPC 2具有在由聚酰亚胺树脂等制成的长形的基膜25(基材)上(第三表面上)彼此平行地形成的多个配线导体21。多个配线导体21整体上形成单个配线层,并且各配线导体21均通过对铜(Cu)箔等进行图案化而形成。配线导体21除了与记录元件基板1电连接的部分(即需要露出的部分)以外被由聚酰亚胺等制成的覆盖膜26覆盖。基膜25与配线导体21通过粘接膜(未示出)等彼此结合,配线导体21与覆盖膜26也通过粘接膜(未示出)等结合。将FPC 2的在垂直于长度方向(即配线导体21的延伸方向)的方向上的尺寸称为宽度W。尽管图1A和图1B中示出的FPC 2具有单个配线层,但是根据本公开的FPC 2可以具有堆叠的多个配线层,并且堆叠的多个配线层之间插入有绝缘层。
[第一示例性实施方式]
图2A至图2C是示出根据本公开的第一实施方式的液体喷出头的构造的示意性截面图。图2A至图2C依次示出将FPC 2电连接至记录元件基板1的过程的不同步骤。安装在根据第一实施方式的液体喷出头上的记录元件基板1由硅(Si)基板11形成,并且在记录元件基板1的第一面(即硅基板11的第一面)上配置有喷出口形成构件17。喷出口形成构件17具有呈贯通孔形式的多个喷出口16。在形成喷出口16的部分处,喷出口形成构件17与硅基板11的第一面间隔开,并且在喷出口形成构件17与硅基板11之间形成被称为压力室的空间。喷出口形成构件17与诸如墨等的待被喷出的液体接触,因此形成喷出口形成构件17的材料需要对喷出的液体具有耐性。对于通过喷出口16喷墨的液体喷出头,喷出口形成构件17可以由具有耐墨性的感光性树脂制成。
为了越过上述压力室将液体供给到喷出口16,在硅基板11中形成从第二面延伸到第一面的贯通孔形式的液体供给路径。液体供给路径15在第二面上的开口被称为液体供给口。硅基板11的第二面是与硅基板11的第一面相反的面并且与记录元件基板1的第二面92相同。在硅基板11的第一面上,在与喷出口16相对的位置处形成产生引起液体喷出的能量的记录元件18。记录元件18响应于信号而产生热能,并将该热能赋予压力室中的液体,以使部分液体发泡并且通过喷出口16喷出。在硅基板11的第一面上在未布置喷出口形成构件17的端部中形成有用于从外部向记录元件基板1输入电信号的焊盘12。
触发从液体喷出头喷出液体的电信号从液体喷出设备的主单元传递到记录元件基板1。为此,上述FPC 2电连接到记录元件基板1。在记录元件基板1和FPC 2之间建立电连接之前,将记录元件基板1机械地结合到如图2A所示的FPC 2。例如,可以通过粘接剂和结合膜中的一者来实现该结合。在该示例中,使用了紫外线(UV)可固化的环氧粘接剂。在FPC 2的前端的未形成配线导体21的区域(即露出基膜25的部分)涂布粘接剂81,对涂布的粘接剂81照射紫外线,然后使记录元件基板1接触并压靠FPC 2。接着,如图2B所示,粘接剂81固化,记录元件基板1被机械地结合到FPC 2。在该结合状态下,FPC 2在其前端部中在与长度方向平行的面处结合到记录元件基板1,并且记录元件基板1在液体供给口和记录元件基板1的端部之间的部分处结合到FPC 2。即,记录元件基板1的第二面92的在液体供给口与记录元件基板1的边缘之间的部分与FPC 2的基膜25的第三面彼此结合。如果FPC 2的任何配线导体21直接与记录元件基板1接触,则发生电短路(短路)。为了避免这种情况,配线导体21的末端从FPC 2的前端朝向FPC 2的根部缩回,从而确保了配线导体21和记录元件基板1彼此不接触的位置关系。具体地,FPC 2上的配线导体21的末端在长度方向上比记录元件基板1的外周靠近FPC 2的根部。然而,这不适用于当产品用作液体喷出头时未供电的并且不会短路的任何配线导体21,并且这种配线导体21可以与记录元件基板1接触。为了防止结合到记录元件基板1的FPC 2妨碍液体向液体供给路径15的供给,FPC 2和记录元件基板1以结合后的FPC 2不覆盖液体供给路径15的液体供给口的位置关系配置。具体地,在记录元件基板1的第二面92上,FPC 2的前端位于记录元件基板1的端部与液体供给口之间。
如图2C所示,形成在硅基板11的第一面上的用于电连接的焊盘12和FPC2的配线导体21通过线结合而彼此电连接。作为线结合的方法,有使用金线的球形结合和使用铝(Al)线的楔形结合。在示出的示例中,通过使用由直径为25μm的由金制成的结合线51的球形结合来实现电连接。图3是通过线结合连接的记录元件基板1和FPC 2的平面图。结合线51、记录元件基板1上的焊盘12和露出的配线导体21形成记录元件基板1和FPC 2的电连接部,并且将电绝缘密封剂(密封剂)90涂布到该电连接部。
在将记录元件基板1和FPC 2彼此电连接之后,通过FPC 2将电信号给送到记录元件基板1以检查记录元件基板1的电气特性,从而检查记录元件基板1是否存在任何电故障。在确认没有电故障之后,将记录元件基板1和FPC 2的组件结合到流路构件7,从而完成如图4所示的液体喷出头8。流路构件7是其中形成有用于向记录元件基板1的液体供给路径15供给液体的流路78的构件。流路构件7结合到记录元件基板1的第二面92。在记录元件基板1的第二面92与FPC 2的在基膜25侧的表面之间存在高度差。为了防止记录元件基板1和FPC 2的组件在结合到流路构件7时不论高度差如何而相对于流路构件7倾斜,如图5所示,在流路构件7的表面上形成作为凹部的台阶部76。台阶部76形成在当组件结合到流路构件7时台阶部76与FPC 2相对的位置处,并且因为可以忽略粘接剂81的厚度,所以台阶部76的深度与FPC 2的基膜25的厚度相当。
根据本实施方式,在记录元件基板1和FPC 2未结合到任何支撑构件的状态下,记录元件基板1和作为柔性电配线基板的FPC 2可以彼此电连接,并且可以检查记录元件基板1的电气特性。FPC 2的配线导体21位于记录元件基板1的外周的外侧,并且与液体供给路径15的液体供给口充分地间隔开,因此可以减少液体与电连接部接触的可能性。注意,如果当记录元件基板1和FPC 2尚未彼此结合时建立电连接,则电连接的记录元件基板1和FPC在随后的制造步骤中难以处理。根据本实施方式,即使记录元件基板1和FPC 2在二者没有连接到任何支撑构件的状态下彼此电连接,也可以在随后的制造步骤中容易地处理记录元件基板1和FPC 2,这是因为记录元件基板1和FPC 2已经彼此结合。此外,在本实施方式中,在液体喷出头的平面图中,记录元件基板1和FPC 2之间的结合区域与焊盘12彼此重叠。然而,焊盘12和结合区域并非必须重叠。然而,如在本实施方式中那样,如果记录元件基板1和FPC 2之间的结合区域与焊盘12彼此重叠,则该结合区域在线结合期间用作支撑。因此,在液体喷出头的平面图中,记录元件基板1和FPC 2之间的结合区域与焊盘12可以至少部分地彼此重叠。
图6是示出将记录元件基板1和FPC 2彼此电连接的上述过程的流程图。首先,在步骤101中,如上所述,将粘接剂81涂布到FPC 2的前端的未形成配线导体21的部分,然后在步骤102中,通过粘接剂81将记录元件基板1结合到FPC 2上。然后在步骤103中,通过线结合将记录元件基板1的焊盘12和FPC 2的配线导体21彼此电连接,然后在步骤104中,利用电绝缘密封剂90涂覆电连接部。最后,通过FPC 2检查记录元件基板1的电气特性,并将流路构件7结合到通过了检查的如上所述生产的任何组件上,从而完成液体喷出头8。
[第二示例性实施方式]
接下来,将说明根据本公开的第二实施方式的液体喷出头。在上述第一实施方式中,UV可固化粘接剂81用于将记录元件基板1和FPC 2彼此机械地结合。在粘接剂81固化之前,粘接剂81是液体。因此,当将记录元件基板1压靠FPC 2时,粘接剂81可能从记录元件基板1和FPC 2之间挤出,并通过液体供给口流入液体供给路径15或附着到FPC 2的任何露出的配线导体21。如果粘接剂81流入液体供给路径15,则粘接剂81会妨碍液体向记录元件基板1的第一面的供给,由此会影响液体从喷出口16的喷出。如果粘接剂81附着到配线导体21,则记录元件基板1和FPC 2不能通过线结合而彼此电连接。根据第二实施方式的液体喷出头与根据第一实施方式的液体喷出头基本相同,与根据第一实施方式的液体喷出头的不同之处在于,为了防止粘接剂81被挤出而导致上述故障,在记录元件基板1的第二面92中形成槽或缺口。
图7A和图7B是示出在根据第二实施方式的液体喷出头中使用的记录元件基板1的图。图7A是示意性截面图,图7B是第二面92的立体图。根据该实施方式,为了防止粘接剂81流入液体供给路径15,在液体供给口和记录元件基板1的端部之间的靠近液体供给路径15的液体供给口的位置处,在记录元件基板1的第二面92中形成槽72。具体地,当将FPC 2结合到记录元件基板1的第二面92时,在将要位于液体供给口和FPC 2之间的位置处与液体供给口的外缘平行地形成槽72。为了防止粘接剂81附着到FPC 2的任何露出的配线导体21,在记录元件基板1的外缘中,在FPC 2与记录元件基板1相交的部分中(即在记录元件基板1的端部的棱线部中)形成有缺口71。形成缺口71以在棱线部处提供高度差。缺口71和槽72两者均可以具有大于FPC 2的宽度W的长度。
图8A和图8B是用于说明根据第二实施方式的液体喷出头的记录元件基板1和FPC2的结合的图。图8A是示意性截面图,图8B是从第二面92侧观察的记录元件基板1的立体图。配线导体21的末端从FPC 2的前端缩回,如图8A所示,在FPC 2的前端部的未形成配线导体21的区域中,将粘接剂81涂布到基膜25上,从而使记录元件基板1和FPC 2彼此结合。在该过程中,因为记录元件基板1压靠FPC 2,所以粘接剂81在记录元件基板1和FPC 2之间被挤出。然而,挤出的粘接剂81流入槽72中,因此不会流入液体供给口。另外,朝向记录元件基板1的端部挤出的任何粘接剂81都被保留在由缺口71和基膜25限定的空间中,并且不会遮盖和粘附到任何露出的配线导体21。在本实施方式中,尽管缺口71和槽72形成于记录元件基板1的第二面92,但是还可以根据需要仅设置缺口71和槽72中的一者。
对于前述的根据第一实施方式的液体喷出头,在记录元件基板1和FPC 2之间的电连接建立之后,将电绝缘密封剂90涂布到电连接部。密封剂90也是液体材料。因此,当涂布密封剂90以覆盖电连接部时,密封剂90可能沿着FPC 2的表面溢流到记录元件基板1的第二面92,并通过液体供给口流入液体供给路径15中。如果密封剂90流入液体供给路径15中,则密封剂90妨碍向记录元件基板1的第一面的液体供给,就像粘接剂81流入液体供给路径15的情况一样。图9A和图9B是用于示出根据第二实施方式的、电连接部被密封剂90覆盖的液体喷出头的图。图9A是示意性截面图,图9B是从第二面92侧观察的记录元件基板1的立体图。在第二实施方式中,如图9B所示,再次地,密封剂90倾向于沿着FPC 2的侧缘部30溢流到记录元件基板1的第二面92。然而,根据第二实施方式,密封剂90在溢流到第二面92之前被困在由缺口71和基膜25限定的空间中,因此防止了密封剂90溢流到第二面92。因此,密封剂90不像粘接剂81那样到达液体供给路径15的液体供给口。
[第三示例性实施方式]
接下来,将说明根据本公开的第三实施方式的液体喷出头。图10A和图10B是用于示出根据第三实施方式的液体喷出头的记录元件基板1的图。图10A是示意性截面图,图10B是从第二面92侧观察的记录元件基板1的立体图。在第一实施方式中,在流路构件7中设置有台阶部76,以防止当记录元件基板1与FPC 2的组件结合到流路构件7时组件倾斜。根据第三实施方式,代替在流路构件7中设置台阶部76,在FPC 2结合到记录元件基板1的部分处,在记录元件基板1的第二面92中设置凹部13。由于粘接剂81的厚度可以忽略,所以凹部13的深度可与FPC 2的基膜25的厚度相当。凹部13的外周被成形为恰好足以容纳FPC 2的前端部或者大于该前端部。
图11A和图11B是用于示出根据第三实施方式的液体喷出头的记录元件基板1和FPC 2之间的结合的图。图11A是示意性截面图,图11B是从第二面92侧观察的记录元件基板1的立体图。如在第一实施方式和第二实施方式中一样,将粘接剂81涂布到FPC 2的基膜25上,并且将记录元件基板1压靠FPC 2以将记录元件基板1和FPC 2彼此连接。在本实施方式中,记录元件基板1的第二面92和FPC 2的基膜的表面(与接触配线导体21的面相反的面)彼此大致齐平,第二面92与基膜的表面之间的高度差小。因此,即使在流路构件7中未设置台阶部76(参照图5),也能够将记录元件基板1和FPC 2的组件在不倾斜的情况下结合到流路构件7。图12是包括电连接部的以此方式完成的液体喷出头的主要部分的截面图。在图10A和图10B中,凹部13的形状与FPC 2的形状一致,并且FPC 2的前端部被硅基板11的因形成凹部13而产生的侧壁包围。然而,缺口的形状不限于此。如图13所示,可以在记录元件基板1的端部的相反两侧跨越记录元件基板1的两侧之间的宽度地在记录元件基板1的端部中形成凹部13。
[第四示例性实施方式]
接下来,将说明根据第四实施方式的液体喷出头。图14A至图14D是用于示出根据本实施方式的液体喷出头的图。图14A是记录元件基板1的示意性截面图,图14B是从第二面侧观察的记录元件基板1的立体图。图14C是通过粘接剂81将FPC 2结合到记录元件基板1的液体喷出头的立体图,图14D是涂布有密封剂90的液体喷出头的立体图。根据第二实施方式,记录元件基板1的第二面92中形成有缺口71和槽72,被挤出的粘接剂81被容纳在缺口71和槽72内。根据第四实施方式,在第二面92中形成有槽73来代替缺口71。简而言之,在记录元件基板1的第二面92中,在液体供给路径15的液体供给口与记录元件基板1的端部之间形成有两个槽72、73。槽72和73实质彼此平行地形成,并且FPC 2在槽72和73之间的区域中通过粘接剂81结合到记录元件基板1的第二面92。槽72和73各自的长度均可以大于FPC 2的宽度W。靠近液体供给口的槽主要用于防止用于结合FPC 2和记录元件基板1的粘接剂81流入液体供给路径15。靠近记录元件基板1的端部的槽73主要用于防止覆盖电连接部的电绝缘密封剂90沿着FPC 2的侧缘部30溢流到记录元件基板1的第二面92并且到达液体供给口。当然,槽73还用于防止粘接剂81附着到FPC 2的任何露出的配线导体21。
用于结合FPC 2和记录元件基板1的粘接剂81的涂布量Aadh和用于覆盖包括结合线51的电连接部的密封剂90的涂布量Aseal通常根据Aseal>Aadh而相关联。即,密封剂90的涂布量大于粘接剂81的涂布量。涂布量越大,则所涂布的物质被挤出或溢流的可能性越大。因此,靠近记录元件基板1的端部的槽73可以具有比靠近液体供给路径15的液体供给口的槽72更大的容积。如图14B所示,如果被结合的FPC 2的宽度方向假定为与槽的长度方向一致的X方向,并且将垂直于X方向的方向假定为与槽的宽度方向一致的Y方向,则在所示的示例中,槽73的长度和宽度比槽72大。在所示的示例中,槽72和73具有相同的深度。然而,槽可以通过具有不同的深度而具有不同的容积。在所示的示例中,槽72和73的深度大于所涂布的粘接剂81的厚度,以使槽72和73不会被粘接剂81部分地阻塞。这是因为,如果槽72和73被阻塞(即使是被部分地阻塞),阻塞部分中的空气也会在粘接剂81固化时产生的热的作用下膨胀,从而使FPC 2剥离或使粘接剂81爆裂。FPC 2的剥离导致产品不良,并且如果爆裂的粘接剂81阻塞了液体供给口,则粘接剂81可能会干扰液体的喷出。槽72和73之间的距离可以被最大化,以确保FPC 2的最大可能的结合面积从而增大结合强度。
接下来,将说明根据本实施方式的液体喷出头的组装过程。根据本实施方式,如在第二实施方式中一样,首先,如图14C所示,将粘接剂81涂布到FPC 2的基膜25以将FPC 2和记录元件基板1彼此结合。在该过程中,粘接剂81在FPC 2和记录元件基板1之间受压并被挤出。然而,挤出的粘接剂81流入槽72和73中,因此不会流入液体供给路径15中。然后,通过线结合将记录元件基板1的焊盘12和FPC 2的配线导体21彼此电连接,并且利用电绝缘密封剂90覆盖电连接部。密封剂90沿着FPC 2的侧缘部30溢流到记录元件基板1的第二面92,但是流入槽73中并且被困在槽73中,如图14D所示。因此,密封剂90不能流入液体供给路径15。
尽管在以上说明中在记录元件基板1的第二面92中设置两个槽72和73,但是考虑到FPC 2与记录元件基板1之间的结合强度,可以设置三个或更多个槽。尽管可以以更高的可靠性防止粘接剂81和密封剂90的流动和扩散,但是随着槽的数量的增加,FPC 2和记录元件基板1之间的结合面积减小,因而结合强度降低。在上述示例中,槽72和73均在记录元件基板1的第二面92上具有长矩形的开口,并且槽72和73彼此分离。可替代地,槽72和73可以通过联接槽联接。图15A至图15C是用于示出彼此联接的槽72和73的配置的图。图15A是记录元件基板1的第二面92的平面图,图15B是结合到记录元件基板1的FPC 2的立体图,图15C是涂布有密封剂90的FPC 2的立体图。设置一对联接槽74以将槽72和73彼此联接。当将FPC 2结合到记录元件基板1时,联接槽74可以位于FPC 2的侧缘的稍微外侧。由于设置了将槽72和73彼此联接的联接槽74,所以如图15B所示,从FPC 2与记录元件基板1之间挤出的任何粘接剂82均流入包围被结合的FPC 2的槽72和73以及联接槽74,由此能够可靠地防止被挤出的粘接剂81溢流到液体供给口。此外,已经流到记录元件基板1的第二面92的密封剂90不仅可以流入槽73中,还可以通过联接槽74流入槽72中,如图15C所示。因此,与设置单独的槽72、73的情况相比,能够更可靠地防止密封剂90到达液体供给路径15的液体供给口。
在第四实施方式中,形成在记录元件基板1的第二面92上的槽的形状和配置不限于上述那些。图16A至图16C示出了槽的形状和配置的另一示例。图16A是记录元件基板1的第二面92的平面图,图16B是结合到记录元件基板1的FPC 2的立体图,图16C是涂布有密封剂90的FPC 2的立体图。除了从接近记录元件基板1的端部的槽73延伸到记录元件基板1的端部的一对端部槽75之外,图16A至图16C所示的配置与图14A至图14D所示的配置相同。当FPC 2结合到记录元件基板1上时,端部槽75可以位于FPC 2的侧缘的稍微外侧。如图16B所示,利用图16A至图16C所示的配置,以与以上参照图13所述相同的方式防止粘接剂81被挤出。沿着FPC 2的侧缘部溢流的任何密封剂90优选地由端部槽75引入槽73中,如图16C所示。因此,即使密封剂90的涂布量意外地增加,也能够更容易地将密封剂90的增量引导到槽73中,因此,可以以更高的可靠性防止密封剂90流入液体供给路径15中。
图17A至图17C示出了槽的形状和配置的另一示例。图17A是记录元件基板1的第二面92的平面图,图17B是结合到记录元件基板1的FPC 2的立体图,图17C是涂布有密封剂90的FPC 2的立体图。图17A至图17C所示的配置是图15A至图15C所示的配置和图16A至图16C所示的配置的组合,不仅设置了将槽72和73彼此联接的一对联接槽74,而且还设置了从槽73延伸到记录元件基板1的端部的一对端部槽75。如图17B所示,利用图17A至图17C所示的配置,以与以上参照图14A至图14D所述相同的方式防止粘接剂81被挤出。利用图17A至图17C所示的配置,用于容纳密封剂90的槽的容积大于图16A至图16C所示的槽的容积。如图17C所示,即使密封剂90的涂布量意外地增加,溢流到第二面92的任何密封剂90也可以被可靠地引导到槽中,并且能够可靠地防止密封剂90流入液体供给路径15中。
接下来,将参照图18A和图18B说明在第四实施方式中在记录元件基板1上的应当将FPC 2结合到至记录元件基板1的位置。图18A和图18B是结合有FPC 2的记录元件基板1的第二面92的平面图。如图18A所示,如果FPC 2的前端完全越过接近液体供给路径15的槽72,则挤出的粘接剂81和FPC 2可能阻塞槽72,根据环境条件,阻塞的空间中的空气可能膨胀从而导致FPC 2剥离。为了避免这种情况,如图18B所示,FPC 2的前端可以被定位成不完全越过接近液体供给路径15的槽72。
根据第四实施方式,如先前所述的第三实施方式那样,为了防止记录元件基板1和FPC 2的组件相对于流路构件7倾斜,可以在记录元件基板1的第二面92中设置用于容纳FPC2的凹部13。图19A和图19B是示出形成有用于将FPC 2容纳在其中的凹部13的记录元件基板1的图。图19A是示意性截面图,图19B是第二面92的立体图。在凹部13中设置了槽73和74。利用图19A和图19B所示的配置,可以防止粘接剂81和密封剂90的溢流,并且可以使FPC 2的基膜25的表面和记录元件基板1的第二面92实质上彼此齐平。
在上述第四实施方式中,形成在记录元件基板1的第二面中的槽的数量、形状和尺寸不限于上述那些。例如,通过考虑粘接剂81和密封剂90的类型、涂布量、粘度(对溢流的敏感性)和结合强度可以适当地选择槽的数量、形状和尺寸。
[第五示例性实施方式]
接下来,将说明本公开的第五实施方式。图20A和图20B是示出在根据第五实施方式的液体喷出头中使用的记录元件基板1的图。图20A是示意性截面图,图20B是记录元件基板1的第二面92的立体图。根据本实施方式的记录元件基板1包括彼此结合的第一基板10和第二基板20,并且第一基板10包括产生喷出液体所需的能量的记录元件18和喷出口形成构件17,液体供给路径15的液体供给口形成在第二基板20中。至于第一实施方式所述的喷出口形成构件17,在喷出口形成构件17中形成喷出口16。图20A中的第一基板10的上表面是记录元件基板1的第一面,图20A中的第二基板20的下表面是记录元件基板1的第二面92。在第一基板10的前表面上还设置有用于电连接的焊盘12。与液体供给路径15连通的独立的供给路径19穿过第一基板10,以将液体供给到记录元件18的位置。
第一基板10和第二基板20可以通过粘接剂或结合膜彼此结合。在下面的说明中,热固性环氧粘接剂用于将第一基板10和第二基板20彼此结合。第一基板10和第二基板20两者均使用半导体器件制造技术由半导体晶片制造。通常地,记录元件基板1具有比半导体晶片充分小的尺寸。因此,可以从一个半导体晶片同时制造多个第一基板10,并且也可以从一个半导体晶片同时制造多个第二基板20。因此,在记录元件基板1的制造中,第一基板10和第二基板20可以通过两种可能的方法彼此结合。在第一方法中,将形成有多个但尚未分离的基板10的晶片和形成有多个但尚未分离的第二基板20的晶片彼此结合,然后进行切割以分离各个记录元件基板1。在第二方法中,将各个第一基板10从用于第一基板10的晶片分离,并且还将各个第二基板20从用于第二基板20的晶片分离,然后通过将一个第一基板10和一个第二基板20彼此结合而形成单个记录元件基板。在该实施方式中,可以使用两个方法中的任一者。
图21A和图21B是用于示出根据本实施方式的记录元件基板1和FPC 2的结合的图。图21A是示意性截面图,图21B是从第二面92侧观察的记录元件基板1的立体图。根据该实施方式,当FPC 2结合到记录元件基板1的第二面92时,为了防止粘接剂81流动到液体供给路径15中,第一基板10的与第一面相反的面被用作结合到FPC 2的结合面93。如图21B所示,记录元件基板1的第二面面朝上,结合面93位于比第二基板20中的开口(即液体供给路径15的液体供给口)低第二基板20的厚度的高度处。即,根据本实施方式,通过在第一基板10和第二基板20之间设置高度差来实现与上述第三实施方式中的凹部13等效的结构。将粘接剂涂布到FPC 2的基膜25上,并且将FPC 2压靠记录元件基板1以使记录元件基板1和FPC 2彼此结合。尽管在记录元件基板1和FPC 2之间挤出了受压的粘接剂81,但接合面93和第二面92之间的高度差防止挤出的粘接剂81到达液体供给路径15的液体供给口。
图22A和图22B是示出根据第五实施方式的液体喷出头的示意图。图22A是示意性截面图,图22B是从第二面92侧观察的移除了流路构件7的记录元件基板1的立体图。如上所述,在记录元件基板1和FPC 2机械地彼此结合之后,记录元件基板1的焊盘12和FPC 2的配线导体21通过线结合而彼此电连接。在电连接之后,利用电绝缘密封剂90覆盖包括结合线51、记录元件基板1的焊盘12和FPC 2的任何露出的配线导体21的电连接部。由于利用密封剂90完全涂覆和密封结合线51,所以密封剂90沿着FPC 2的侧缘部30溢流到结合面93。利用根据该实施方式的配置,由于第一基板10的结合面93和第二基板20的其中形成有液体供给路径15的开口的面之间存在显著的高度差,所以溢流的密封剂90被由高度差形成的台阶部困住。因此,根据本实施方式的配置可以防止密封剂90流入液体供给路径15。例如,第一基板10的结合面与第二基板20的其中形成有液体供给路径15的开口的面之间的高度差约为600μm,并且结合到结合面93的FPC的厚度约为200μm。
利用根据该实施方式的配置,例如,在FPC 2的基膜25的表面与第二基板20的其中形成有液体供给路径15的开口的面之间存在约400μm的高度差。通过增加高度差,可以容易地适应密封剂90的诸如粘度的性质的值的变化。第一基板10的结合面93与第二基板20的形成有液体供给路径15的开口的面之间的高度差的值不限于这里所述的值。可以通过考虑形成在记录元件基板1和FPC 2的厚度中的其它高度差来适当地设置高度差的值。
图23A和图23B是示出根据第五实施方式的液体喷出头的其它示例的示意性截面图,其中记录元件基板1的总厚度是固定的,而第一基板10具有不同的厚度。在图23A所示的示例中,第一基板10具有厚度A1,在图23B所示的示例中,第一基板10具有厚度A2(其中A1>A2)。通过减小第一基板10的厚度,可以减小结合线51的顶点与FPC 2的配线导体21之间的高度差,并且可以减小涂布的密封剂90的所需厚度。结果,可以减少密封剂90的涂布量,并且可以减少沿着FPC 2的侧缘部30溢流到结合面93的密封剂90的量。
在图20A至图21B所示的示例中,结合面93被形成为连接记录元件基板1的端部的一对相反侧。然而,结合面93不限于这种形状,并且结合面93可以被成形为匹配FPC 2的前端部的形状或略大于FPC 2的前端部。图24是从第二面92侧观察的记录元件基板1的立体图,示出了结合面93被成形为与FPC 2的前端部的形状匹配的液体喷出头。利用图24所示的配置,由于结合面93被成形为与FPC 2的前端部的形状匹配,所以FPC 2的前端部被第二基板20的侧壁包围。
虽然已经参照示例性实施方式说明了本公开,但是应当理解,本公开不限于所公开的示例性实施方式。权利要求的范围应符合最宽泛的解释,以包含所有这样的变型、等同结构和功能。

Claims (20)

1.一种液体喷出头,其包括:
记录元件基板,其包括形成于第一面的用于电连接的焊盘以及形成于与所述第一面相反的第二面的液体供给口;和
柔性电配线基板,其包括配线导体,
其特征在于,所述记录元件基板在所述第二面中的所述液体供给口和所述记录元件基板的边缘之间区域的至少一部分区域与所述柔性电配线基板结合,并且
所述液体喷出头具有所述配线导体和所述焊盘通过结合线彼此电连接的电连接部。
2.根据权利要求1所述的液体喷出头,其中,所述柔性电配线基板包括基材和形成于所述基材的第三面的所述配线导体,并且
所述记录元件基板的所述第二面和所述基材的所述第三面彼此结合。
3.根据权利要求1或2所述的液体喷出头,其中,在所述液体喷出头的平面图中,所述记录元件基板与所述柔性电配线基板彼此结合的结合区域和所述焊盘至少部分地彼此重叠。
4.根据权利要求1或2所述的液体喷出头,其中,所述电连接部覆盖有电绝缘密封剂。
5.根据权利要求1或2所述的液体喷出头,其中,所述柔性电配线基板在与所述柔性电配线基板的长度方向平行的所述柔性电配线基板的前端部的面处与所述记录元件基板结合。
6.根据权利要求5所述的液体喷出头,其中,所述柔性电配线基板上的配线导体的末端以所述配线导体不与所述记录元件基板接触的方式定位。
7.根据权利要求5所述的液体喷出头,其中,所述记录元件基板的边缘的棱线部至少在所述柔性电配线基板越过所述记录元件基板的边缘的部分中形成缺口。
8.根据权利要求5所述的液体喷出头,其中,在所述记录元件基板和所述柔性电配线基板彼此结合的结合区域中,在所述记录元件基板的表面上形成有在与所述长度方向垂直的方向上延伸的槽。
9.根据权利要求8所述的液体喷出头,其中,所述槽的长度大于所述柔性电配线基板在与所述长度方向垂直的方向上的宽度。
10.根据权利要求8所述的液体喷出头,其中,所述柔性电配线基板以所述柔性电配线基板的前端不阻塞最接近所述液体供给口的所述槽的方式结合到所述记录元件基板。
11.根据权利要求8所述的液体喷出头,其中,所述液体喷出头具有彼此平行的多个槽。
12.根据权利要求11所述的液体喷出头,其中,越远离所述液体供给口的所述槽的容积越大。
13.根据权利要求1或2所述的液体喷出头,其中,所述柔性电配线基板结合到所述第二面。
14.根据权利要求1或2所述的液体喷出头,其中,在所述第二面的一部分中形成有连接到所述记录元件基板的边缘的凹部,并且所述柔性电配线基板在所述凹部中结合到所述记录元件基板。
15.根据权利要求1或2所述的液体喷出头,其中,所述记录元件基板包括彼此结合的第一基板和第二基板,所述第一基板包括所述第一面并且使所述焊盘形成于所述第一基板,所述第二基板包括所述第二面并且使所述液体供给口形成于所述第二基板。
16.根据权利要求15所述的液体喷出头,其中,所述第一基板的与所述第一面相反的面的一部分未被所述第二基板覆盖并且结合到所述柔性电配线基板。
17.一种液体喷出头的制造方法,所述液体喷出头包括记录元件基板和柔性电配线基板,所述记录元件基板包括形成于第一面的用于电连接的焊盘以及形成于与所述第一面相反的第二面的液体供给口,所述柔性电配线基板包括配线导体,其特征在于,所述方法包括:
将所述记录元件基板在所述第二面的处于所述液体供给口和所述记录元件基板的边缘之间的区域中与所述柔性电配线基板结合的步骤;
在所述结合的步骤之后,形成所述配线导体和所述焊盘通过结合线彼此电连接的电连接部的步骤;和
经由所述柔性电配线基板将电信号传递到所述记录元件基板,对所述记录元件基板的电气特性进行检测的步骤。
18.根据权利要求17所述的液体喷出头的制造方法,其中,所述方法包括:
在所述电连接的步骤之后并且在检查电气特性的步骤之前,利用电绝缘密封剂覆盖所述电连接部的步骤。
19.根据权利要求17或18所述的液体喷出头的制造方法,其中,所述记录元件基板包括彼此结合的第一基板和第二基板,所述第一基板包括所述第一面并且使所述焊盘形成于所述第一基板,所述第二基板包括所述第二面并且使所述液体供给口形成于所述第二基板,并且
所述记录元件基板的形成步骤包括:
将一体地形成有多个所述第一基板的第一晶片和一体地形成有多个所述第二基板的第二晶片彼此结合的步骤;
在所述第一晶片和所述第二晶片的结合的步骤之后,通过切割将各个记录元件基板彼此分离的步骤。
20.根据权利要求17或18所述的液体喷出头的制造方法,其中,所述记录元件基板包括彼此结合的第一基板和第二基板,所述第一基板包括所述第一面并且使所述焊盘形成于所述第一基板,所述第二基板包括所述第二面并且使所述液体供给口形成于所述第二基板,并且
所述记录元件基板的形成步骤包括:
在一体地形成有多个所述第一基板的第一晶片上执行切割以提供各个第一基板的第一分离步骤;
在一体地形成有多个所述第二基板的第二晶片上执行切割以提供各个第二基板的第二分离步骤;和
将在所述第一分离步骤中提供的所述第一基板和在所述第二分离步骤中提供的所述第二基板彼此结合的步骤。
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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024024439A (ja) * 2022-08-09 2024-02-22 キヤノン株式会社 液体吐出ユニット及びその製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1110894A (ja) * 1997-06-19 1999-01-19 Canon Inc インクジェットヘッド及びその製造方法
US20060132545A1 (en) * 2003-02-06 2006-06-22 Toru Tanikawa Ink ejecting head and method for making the same
US20060221133A1 (en) * 2005-04-04 2006-10-05 Canon Kabushiki Kaisha Liquid discharge head and method for manufacturing the same
CN101092080A (zh) * 2006-06-22 2007-12-26 三星电子株式会社 喷墨装置、其制造方法以及具有该喷墨装置的墨盒
JP2008120056A (ja) * 2005-12-15 2008-05-29 Canon Inc 液体吐出ヘッド及び該液体吐出ヘッドの製造方法
US20080143788A1 (en) * 2006-12-19 2008-06-19 Canon Kabushiki Kaisha Ink jet recording head
US20150210077A1 (en) * 2014-01-28 2015-07-30 Canon Kabushiki Kaisha Liquid ejection head, liquid ejection apparatus, and method of manufacturing liquid ejection head
CN108724941A (zh) * 2017-04-21 2018-11-02 佳能株式会社 液体喷出头

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE32572E (en) * 1985-04-03 1988-01-05 Xerox Corporation Thermal ink jet printhead and process therefor
US5204690A (en) * 1991-07-01 1993-04-20 Xerox Corporation Ink jet printhead having intergral silicon filter
US20010043252A1 (en) * 1997-10-23 2001-11-22 Hewlett-Packard Company Control of adhesive flow in an inkjet printer printhead
JPH11348274A (ja) * 1998-06-03 1999-12-21 Matsushita Electric Ind Co Ltd インクジェット記録ヘッド
JP2000141716A (ja) * 1998-11-12 2000-05-23 Sony Corp 記録装置及び記録方法
US6705705B2 (en) * 1998-12-17 2004-03-16 Hewlett-Packard Development Company, L.P. Substrate for fluid ejection devices
WO2006009235A1 (en) * 2004-07-22 2006-01-26 Canon Kabushiki Kaisha Ink jet recording head and recording apparatus
JP4756942B2 (ja) 2004-07-22 2011-08-24 キヤノン株式会社 インクジェット記録ヘッド及びインクジェット記録装置
JP4817936B2 (ja) 2005-04-04 2011-11-16 キヤノン株式会社 液体吐出ヘッド
US7832818B1 (en) * 2005-05-03 2010-11-16 Oracle America, Inc. Inkjet pen with proximity interconnect
KR20080066447A (ko) * 2007-01-12 2008-07-16 삼성전자주식회사 잉크 젯 인쇄 헤드 칩, 잉크 젯 인쇄 헤드 칩의 제조방법,잉크 젯 인쇄 헤드 칩과 플렉시블 인쇄회로 기판의연결구조, 및 잉크 젯 인쇄 헤드 칩과 플렉시블 인쇄회로기판의 연결방법
KR20080068237A (ko) * 2007-01-18 2008-07-23 삼성전자주식회사 잉크젯 프린트헤드 및 그 제조방법
US7735225B2 (en) 2007-03-30 2010-06-15 Xerox Corporation Method of manufacturing a cast-in place ink feed structure using encapsulant
US20100071456A1 (en) 2008-09-25 2010-03-25 Silverbrook Research Pty Ltd Tack adhesion testing device
JP5665385B2 (ja) 2010-06-16 2015-02-04 キヤノン株式会社 インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法
US8602527B2 (en) * 2011-04-29 2013-12-10 Hewlett-Packard Development Company, L.P. Printhead assembly
KR20140127487A (ko) * 2013-04-25 2014-11-04 삼성전기주식회사 잉크젯 프린트 헤드
JP2019215269A (ja) * 2018-06-13 2019-12-19 セイコーエプソン株式会社 物理量センサー、複合センサー、慣性計測ユニット、移動体測位装置、携帯型電子機器、電子機器、移動体、走行支援システム、および表示装置
US11353636B2 (en) * 2020-01-24 2022-06-07 Facebook Technologies, Llc Mount features that mitigate adhesive migration to an optical element

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1110894A (ja) * 1997-06-19 1999-01-19 Canon Inc インクジェットヘッド及びその製造方法
US20060132545A1 (en) * 2003-02-06 2006-06-22 Toru Tanikawa Ink ejecting head and method for making the same
US20060221133A1 (en) * 2005-04-04 2006-10-05 Canon Kabushiki Kaisha Liquid discharge head and method for manufacturing the same
JP2008120056A (ja) * 2005-12-15 2008-05-29 Canon Inc 液体吐出ヘッド及び該液体吐出ヘッドの製造方法
CN101092080A (zh) * 2006-06-22 2007-12-26 三星电子株式会社 喷墨装置、其制造方法以及具有该喷墨装置的墨盒
US20080143788A1 (en) * 2006-12-19 2008-06-19 Canon Kabushiki Kaisha Ink jet recording head
US20150210077A1 (en) * 2014-01-28 2015-07-30 Canon Kabushiki Kaisha Liquid ejection head, liquid ejection apparatus, and method of manufacturing liquid ejection head
CN108724941A (zh) * 2017-04-21 2018-11-02 佳能株式会社 液体喷出头

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