CN111727367B - 使用荧光传感材料的化学感测装置 - Google Patents

使用荧光传感材料的化学感测装置 Download PDF

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CN111727367B
CN111727367B CN201880072983.6A CN201880072983A CN111727367B CN 111727367 B CN111727367 B CN 111727367B CN 201880072983 A CN201880072983 A CN 201880072983A CN 111727367 B CN111727367 B CN 111727367B
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马丁·桑迈斯特
维克托·西多罗夫
约亨·克拉夫特
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Abstract

化学感测装置包括半导体材料的衬底(1)、形成在衬底(1)中的集成电路组件(2)和光电检测器(3)、衬底(1)上的电介质(4)、在电解质内的布线(5)和电磁辐射源(6)、布置在电介质中或上方的波导(9)和荧光传感器层(14)。波导的一部分被布置为使得由电磁辐射源发射的电磁辐射耦合到波导中。波导的另一部分被布置在光电检测器和荧光传感器层之间。

Description

使用荧光传感材料的化学感测装置
背景技术
某些类型的光-化学气体传感器的气体检测是基于对传感材料的荧光测量，该传感材料在暴露于特定气体后会改变其光学特性。这种气体传感器提供有光源，并且通常为荧光染料的传感材料布置为薄层，使得其能够暴露于气体和来自光源的光。
传感材料在照射时显示的荧光由光电检测器检测。它的波长通常大于光源发射的激发光的波长。气体与传感材料之间的反应能够影响多种光学性质，例如光谱响应，荧光强度或荧光寿命，这些光学性质能够识别气体和气体特有的性质。
光电检测器的高灵敏度是重要的，因为入射到传感材料上的光只有很小一部分被荧光转换。为了使光电检测器和传感材料之间的距离尽可能小，不应该在两者之间放置光源。另一方面，应该避免激发光对传感材料和光电检测器的照射，因为光电检测器理想地是仅暴露于荧光中。
发明内容
本发明的目的是提供一种兼容CMOS的基于荧光的化学感测装置。
化学感测装置包括：半导体材料的衬底；在衬底中形成的集成电路组件和光电检测器；衬底上的电介质；电介质中的布线，该布线为集成电路组件和光电检测器提供电连接；布置在电介质中或电介质上方的电磁辐射源；以及布置在电介质中或上方的荧光传感器层。波导布置在电介质中或上方。波导的一部分布置在电磁辐射源处，使得由电磁辐射源发射的电磁辐射耦合到波导中。波导的另一部分布置在光电检测器和荧光传感器层之间。电磁辐射源可为例如垂直腔面发射激光器(VCSEL)或发光二极管(LED)。
化学感测装置的实施例包括在波导的所述一部分中的光栅和在波导的所述一部分中的另一光栅，该光栅被布置在电磁辐射源处，该另一光栅被布置在光电检测器和荧光传感器层之间。
进一步的实施例包括在波导的所述一部分处的散射颗粒，所述散射颗粒被布置在光电检测器和荧光传感器层之间。
进一步的实施例包括在波导的所述一部分中的反射镜，该反射镜被布置在光电检测器和荧光传感器层之间，该反射镜相对于波导中的电磁辐射的传播方向是倾斜的。
进一步的实施例包括布置在波导和光电检测器之间的滤光器。滤光器阻挡由电磁辐射源发射的电磁辐射，并且对于在荧光传感器层中产生的辐射是透明的。
进一步的实施例包括布置在波导和光电检测器之间的反射镜层。反射镜层反射由电磁辐射源发射的电磁辐射。
进一步的实施例包括载体，该载体对于由电磁辐射源发射的电磁辐射以及在荧光传感器层中产生的辐射是透明的。荧光传感器层被施加在载体上。
在进一步的实施例中，荧光传感器层被直接施加在波导上、或被施加在波导的包覆层上。
在进一步的实施例中，波导和光电检测器以彼此小于10μm的距离布置。
荧光传感器层可特别地提供气体传感器或生物传感器。
附图说明
以下是结合附图对化学感测装置的示例的更具体的描述。
图1是化学感测装置的剖面图。
图2是根据图1的化学感测装置在图1中指示的位置处的另一剖面图。
图3是包括散射颗粒的另一化学感测装置的剖面图。
图4是包括波导反射镜的另一化学感测装置的剖面图。
图5是具有被直接施加到波导的荧光传感器层的另一化学感测装置的剖面图。
具体实施方式
图1是包括波导的兼容CMOS的化学感测装置的剖面图。集成电路2的组件和可以例如是光电二极管的光电检测器3可以被形成在半导体材料的衬底1中，该衬底例如可以是硅。在衬底1的上方布置有具有嵌入金属层的电介质4，该嵌入金属层形成布线5。布线5为集成电路组件2和光电检测器3提供电连接。集成电路2的组件、光电检测器3、电介质4和布线5可以通过例如常规CMOS工艺来形成。作为示例，图1还示出了用于外部电连接的接触连接件15。
可以例如是垂直腔面发射激光器(VCSEL)或发光二极管(LED)的电磁辐射源6被布置在电介质4中或上方。如图1所示，电磁辐射源6可以是单片集成的，也可以由外部装置所提供。波导9被布置在电磁辐射源6处，使得由电磁辐射源6所发射的电磁辐射能够进入波导。例如，可以通过衍射光栅10将电磁辐射耦合到波导9中。可以采用对接耦合来代替光栅10。
波导9可以被设置有包覆层，该包覆层也可以用作被引导的电磁辐射的光学限制。波导的包覆层或限制层本身是已知的，并且未在图中示出。可以施加覆盖层12来覆盖波导9，该覆盖层12对于来自源6的电磁辐射以及由传感材料的荧光所产生的光是透明的。
由源6发射的电磁辐射通过波导9被引导到被设置为用于感测的区域。荧光感测层14被布置在光电检测器3上方。荧光感测层14的材料可以被选择用于气体传感器或生物传感器。在根据图1的实施例中，荧光传感层14被施加在可选的透明载体13上。如果期望在每次测量之后容易地替换荧光传感器层14，则这样的载体13可以是特别有利的。荧光感测层14可以替代地被施加在覆盖层12上或被直接施加在波导9上。
波导9的一部分在光电检测器3和荧光感测层14之间延伸。能够在波导9的此部分中设置另一光栅11以将从波导9出来的电磁辐射朝向荧光感测层14衍射。
从波导9释放的电磁辐射也在朝向光电检测器3的方向上传播。由于不希望如此，所以在光电检测器3与波导9之间布置集成的滤光层7。例如可以是干涉滤光器的滤光层7是被配置为阻挡由源6发射的电磁辐射的带通滤光器。滤光层7对于在荧光传感器层14中产生的电磁辐射是透明的，因此相对于来自源6的更强的激发光，荧光检测是增强的。
为了提高激发光到荧光的低转换率，可以另外设置反射镜层8。从波导9朝向光电检测器3衍射的电磁辐射因此在相反的方向上朝向荧光传感器层14被反射。反射镜层8例如可以是薄金属层。
作为示例，在图1中用箭头指示了电磁辐射的多个不同的传播方向。电磁辐射直接从波导9或经过反射镜层8的反射到达荧光传感器层14。在荧光传感器层14中产生并由光电检测器3所检测的电磁辐射在图1中由较长的竖直箭头指示。
波导9的使用使得在光电检测器3和荧光传感器层14之间保持小的距离。特别地，光电检测器3与波导9之间的距离能够小于10μm。光电检测器3与滤光层7之间的距离通常能够是6.5μm，并且，滤光层7与波导9之间的距离通常为例如3μm。
图2是在图1中指示的位置处的化学感测装置的剖面图。图2的与图1所示元件对应的元件用相同的附图标记表示。图2示出了在另一光栅11的位置处的两个分开的波导9；装置中单个波导的数量是任意的。能够分别为每个波导9设置的反射镜的尺寸能够适合于波导9的宽度。反射镜层8可以仅存在于波导9下方，并且仅覆盖光电检测器3的面积的一部分，例如，特别是小于其面积的50％。如图2中经由示例所示，特别地，波导9的横向延伸能够小于反射镜层8的横向延伸。如图2所示，也可以为每个波导分别设置滤光层7，或者其可以形成为完全覆盖光电检测器3的面积的整个层。
图3是另一兼容CMOS的化学感测装置的剖面图。对应于根据图1的装置的元件的根据图3的装置的元件用相同的附图标记表示。在图3所示的装置中，散射颗粒16被布置在波导9的位于光电检测器3和荧光传感器层14之间的部分处。可以是例如TiO2的散射颗粒16将被引导出波导9的电磁辐射散射。散射颗粒16替代了根据图1的装置中所使用的所述另一光栅11。
图4是另一兼容CMOS的化学感测装置的剖面图。与根据图1的装置的元件相对应的根据图4的装置的元件用相同的附图标记表示。在图4所示的装置中，波导反射镜17被布置在波导9的位于光电检测器3和荧光传感器层14之间的部分中。波导反射镜17相对于波导9中的电磁辐射的传播方向是倾斜的，并且将被引导出波导9的电磁辐射反射。波导反射镜17替代了根据图1的装置中所使用的所述另一光栅11。
图5是另一兼容CMOS的化学感测装置的剖面图。与根据图1的装置的元件对应的根据图5的装置的元件用相同的附图标记表示。在图5所示的装置中，没有覆盖波导9，并且荧光传感器层14被直接施加在波导9上。为了获得荧光传感器层14对来自源6的激发光的曝光，利用了消逝光场，并且在波导9内不需要失真以耦合波导9外面的电磁辐射。在该实施例中，可选的反射镜层8的重要度较小，因此在图5中省略。
在用于化学感测装置的合适的制造方法中，将所有层应用在设有集成电路组件2和光电检测器3的衬底上。根据常规的反端线(BEOL)工艺，尤其是标准CMOS工艺将布线5和滤光器层7布置在电介质4之中和之上。形成包覆层和波导，并且将荧光传感器层14施加于气体传感器或生物传感器。
在替代的生产方法中，波导9和为反射镜层8设置的一个金属层被形成在第二衬底上，随后将第二衬底结合到包括集成电路组件2、光电检测器3和布线5的衬底1上。滤光器层7可以形成在任意衬底上并且设置有特别是氧化物层的平面化层。
所描述的化学传感装置能够显著减小基于荧光的传感器的尺寸，并显着增加了检测到的荧光的量，同时使得到达光电检测器的激发光的量最小。
参考列表
1 衬底
2 集成电路组件
3 光电检测器
4 电介质
5 布线
6 电磁辐射源
7 滤光器层
8 反射镜层
9 波导
10 光栅
11 另一光栅
12 覆盖层
13 载体
14 荧光传感器层
15 接触连接件
16 散射颗粒
17 波导反射镜

Claims (11)

1.一种化学感测装置，包括：
半导体材料的衬底(1)，
在所述衬底(1)中形成的集成电路组件(2)和光电检测器(3)，
在所述衬底(1)上的电介质(4)，
在所述电介质(4)中的布线(5)，所述布线为所述集成电路组件(2)和所述光电检测器(3)提供电连接，
布置在所述电介质(4)中或上方的电磁辐射源(6)，并且
布置在所述电介质(4)中或上方的荧光传感器层(14)，
其特征在于，
波导(9)被布置在所述电介质(4)中或上方，
所述波导(9)的一部分被布置在所述电磁辐射源(6)处，由所述电磁辐射源(6)发射的电磁辐射被耦合到所述波导(9)中，
所述波导(9)的另一部分被布置在所述光电检测器(3)和所述荧光传感器层(14)之间，并且
被布置在所述波导(9)和所述光电检测器(3)之间的反射镜层(8)，所述反射镜层(8)仅覆盖所述光电检测器(3)的面积的一部分并反射由所述电磁辐射源(6)发射的电磁辐射。
2.根据权利要求1所述的化学感测装置，进一步包括：
在所述波导(9)的所述一部分中的光栅(10)，所述光栅(10)被布置在所述电磁辐射源(6)处，以及
在所述波导(9)的所述一部分中的另一光栅(11)，所述另一光栅(11)被布置在所述光电检测器(3)和所述荧光传感器层(14)之间。
3.根据权利要求1所述的化学感测装置，进一步包括：
在所述波导(9)的所述一部分中的散射颗粒(16)，所述散射颗粒(16)被布置在所述光电检测器(3)和所述荧光传感器层(14)之间。
4.根据权利要求1所述的化学感测装置，进一步包括：
在所述波导(9)的所述一部分中的反射镜(17)，所述反射镜(17)被布置在所述光电检测器(3)和所述荧光传感器层(14)之间，所述反射镜(17)相对于所述波导(9)中的电磁辐射的传播方向是倾斜的。
5.根据权利要求1所述的化学感测装置，进一步包括：
布置在所述波导(9)和所述光电检测器(3)之间的滤光器(7)，所述滤光器(7)阻挡由所述电磁辐射源(6)发射的电磁辐射，并且对于在所述荧光传感器层(14)中产生的辐射是透明的。
6.根据权利要求1所述的化学感测装置，进一步包括：
载体(13)，其对于由所述电磁辐射源(6)发射的电磁辐射和在所述荧光传感器层(14)中产生的辐射是透明的，所述荧光传感器层(14)被施加在所述载体(13)上。
7.根据权利要求1所述的化学感测装置，其中，所述荧光传感器层(14)被直接施加在所述波导(9)上。
8.根据权利要求1所述的化学感测装置，其中，所述电磁辐射源(6)是垂直腔面发射激光器。
9.根据权利要求1所述的化学感测装置，其中，所述波导(9)和所述光电检测器(3)以彼此小于10μm的距离布置。
10.根据权利要求1所述的化学感测装置，其中，所述荧光传感器层(14)提供气体传感器。
11.根据权利要求1所述的化学感测装置，其中，所述荧光传感器层(14)提供生物传感器。
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