CN111727367A - 使用荧光传感材料的化学感测装置 - Google Patents

使用荧光传感材料的化学感测装置 Download PDF

Info

Publication number
CN111727367A
CN111727367A CN201880072983.6A CN201880072983A CN111727367A CN 111727367 A CN111727367 A CN 111727367A CN 201880072983 A CN201880072983 A CN 201880072983A CN 111727367 A CN111727367 A CN 111727367A
Authority
CN
China
Prior art keywords
waveguide
electromagnetic radiation
photodetector
sensing device
chemical sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201880072983.6A
Other languages
English (en)
Other versions
CN111727367B (zh
Inventor
马丁·桑迈斯特
维克托·西多罗夫
约亨·克拉夫特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AMS CO LTD
Original Assignee
AMS CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMS CO LTD filed Critical AMS CO LTD
Publication of CN111727367A publication Critical patent/CN111727367A/zh
Application granted granted Critical
Publication of CN111727367B publication Critical patent/CN111727367B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6402—Atomic fluorescence; Laser induced fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N21/643—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" non-biological material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6486—Measuring fluorescence of biological material, e.g. DNA, RNA, cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N2021/6417—Spectrofluorimetric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6428—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"
    • G01N2021/6439—Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" with indicators, stains, dyes, tags, labels, marks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
    • G01N2021/7706—Reagent provision
    • G01N2021/7709—Distributed reagent, e.g. over length of guide
    • G01N2021/7716—Distributed reagent, e.g. over length of guide in cladding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N2021/7769—Measurement method of reaction-produced change in sensor
    • G01N2021/7786—Fluorescence
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12104—Mirror; Reflectors or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12109—Filter

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Plasma & Fusion (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Biomedical Technology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

化学感测装置包括半导体材料的衬底(1)、形成在衬底(1)中的集成电路组件(2)和光电检测器(3)、衬底(1)上的电介质(4)、在电解质内的布线(5)和电磁辐射源(6)、布置在电介质中或上方的波导(9)和荧光传感器层(14)。波导的一部分被布置为使得由电磁辐射源发射的电磁辐射耦合到波导中。波导的另一部分被布置在光电检测器和荧光传感器层之间。

Description

使用荧光传感材料的化学感测装置
某些类型的光-化学气体传感器的气体检测是基于对传感材料的荧光测量，该传感材料在暴露于特定气体后会改变其光学特性。这种气体传感器提供有光源，并且通常为荧光染料的传感材料布置为薄层，使得其能够暴露于气体和来自光源的光。
传感材料在照射时显示的荧光由光电检测器检测。它的波长通常大于光源发射的激发光的波长。气体与传感材料之间的反应能够影响多种光学性质，例如光谱响应，荧光强度或荧光寿命，这些光学性质能够识别气体和气体特有的性质。
光电检测器的高灵敏度是重要的，因为入射到传感材料上的光只有很小一部分被荧光转换。为了使光电检测器和传感材料之间的距离尽可能小，不应该在两者之间放置光源。另一方面，应该避免激发光对传感材料和光电检测器的照射，因为光电检测器理想地是仅暴露于荧光中。
本发明的目的是提供一种兼容CMOS的基于荧光的化学感测装置。
该目的是通过根据权利要求1的化学感测装置解决。实施例来自从属权利要求。
化学感测装置包括：半导体材料的衬底；在衬底中形成的集成电路组件和光电检测器；衬底上的电介质；电介质中的布线，该布线为集成电路组件和光电检测器提供电连接；布置在电介质中或电介质上方的电磁辐射源；以及布置在电介质中或上方的荧光传感器层。波导布置在电介质中或上方。波导的一部分布置在电磁辐射源处，使得由电磁辐射源发射的电磁辐射耦合到波导中。波导的另一部分布置在光电检测器和荧光传感器层之间。电磁辐射源可为例如垂直腔面发射激光器(VCSEL)或发光二极管(LED)。
化学感测装置的实施例包括在波导的所述一部分中的光栅和在波导的所述一部分中的另一光栅，该光栅被布置在电磁辐射源处，该另一光栅被布置在光电检测器和荧光传感器层之间。
进一步的实施例包括在波导的所述一部分处的散射颗粒，所述散射颗粒被布置在光电检测器和荧光传感器层之间。
进一步的实施例包括在波导的所述一部分中的反射镜，该反射镜被布置在光电检测器和荧光传感器层之间，该反射镜相对于波导中的电磁辐射的传播方向是倾斜的。
进一步的实施例包括布置在波导和光电检测器之间的滤光器。滤光器阻挡由电磁辐射源发射的电磁辐射，并且对于在荧光传感器层中产生的辐射是透明的。
进一步的实施例包括布置在波导和光电检测器之间的反射镜层。反射镜层反射由电磁辐射源发射的电磁辐射。
进一步的实施例包括载体，该载体对于由电磁辐射源发射的电磁辐射以及在荧光传感器层中产生的辐射是透明的。荧光传感器层被施加在载体上。
在进一步的实施例中，荧光传感器层被直接施加在波导上、或被施加在波导的包覆层上。
在进一步的实施例中，波导和光电检测器以彼此小于10μm的距离布置。
荧光传感器层可特别地提供气体传感器或生物传感器。
以下是结合附图对化学感测装置的示例的更具体的描述。
图1是化学感测装置的剖面图。
图2是根据图1的化学感测装置在图1中指示的位置处的另一剖面图。
图3是包括散射颗粒的另一化学感测装置的剖面图。
图4是包括波导反射镜的另一化学感测装置的剖面图。
图5是具有被直接施加到波导的荧光传感器层的另一化学感测装置的剖面图。
图1是包括波导的兼容CMOS的化学感测装置的剖面图。集成电路2的组件和可以例如是光电二极管的光电检测器3可以被形成在半导体材料的衬底1中，该衬底例如可以是硅。在衬底1的上方布置有具有嵌入金属层的电介质4，该嵌入金属层形成布线5。布线5为集成电路组件2和光电检测器3提供电连接。集成电路2的组件、光电检测器3、电介质4和布线5可以通过例如常规CMOS工艺来形成。作为示例，图1还示出了用于外部电连接的接触连接件15。
可以例如是垂直腔面发射激光器(VCSEL)或发光二极管(LED)的电磁辐射源6被布置在电介质4中或上方。如图1所示，电磁辐射源6可以是单片集成的，也可以由外部装置所提供。波导9被布置在电磁辐射源6处，使得由电磁辐射源6所发射的电磁辐射能够进入波导。例如，可以通过衍射光栅10将电磁辐射耦合到波导9中。可以采用对接耦合来代替光栅10。
波导9可以被设置有包覆层，该包覆层也可以用作被引导的电磁辐射的光学限制。波导的包覆层或限制层本身是已知的，并且未在图中示出。可以施加覆盖层12来覆盖波导9，该覆盖层12对于来自源6的电磁辐射以及由传感材料的荧光所产生的光是透明的。
由源6发射的电磁辐射通过波导9被引导到被设置为用于感测的区域。荧光感测层14被布置在光电检测器3上方。荧光感测层14的材料可以被选择用于气体传感器或生物传感器。在根据图1的实施例中，荧光传感层14被施加在可选的透明载体13上。如果期望在每次测量之后容易地替换荧光传感器层14，则这样的载体13可以是特别有利的。荧光感测层14可以替代地被施加在覆盖层12上或被直接施加在波导9上。
波导9的一部分在光电检测器3和荧光感测层14之间延伸。能够在波导9的此部分中设置另一光栅11以将从波导9出来的电磁辐射朝向荧光感测层14衍射。
从波导9释放的电磁辐射也在朝向光电检测器3的方向上传播。由于不希望如此，所以在光电检测器3与波导9之间布置集成的滤光层7。例如可以是干涉滤光器的滤光层7是被配置为阻挡由源6发射的电磁辐射的带通滤光器。滤光层7对于在荧光传感器层14中产生的电磁辐射是透明的，因此相对于来自源6的更强的激发光，荧光检测是增强的。
为了提高激发光到荧光的低转换率，可以另外设置反射镜层8。从波导9朝向光电检测器3衍射的电磁辐射因此在相反的方向上朝向荧光传感器层14被反射。反射镜层8例如可以是薄金属层。
作为示例，在图1中用箭头指示了电磁辐射的多个不同的传播方向。电磁辐射直接从波导9或经过反射镜层8的反射到达荧光传感器层14。在荧光传感器层14中产生并由光电检测器3所检测的电磁辐射在图1中由较长的竖直箭头指示。
波导9的使用使得在光电检测器3和荧光传感器层14之间保持小的距离。特别地，光电检测器3与波导9之间的距离能够小于10μm。光电检测器3与滤光层7之间的距离通常能够是6.5μm，并且，滤光层7与波导9之间的距离通常为例如3μm。
图2是在图1中指示的位置处的化学感测装置的剖面图。图2的与图1所示元件对应的元件用相同的附图标记表示。图2示出了在另一光栅11的位置处的两个分开的波导9；装置中单个波导的数量是任意的。能够分别为每个波导9设置的反射镜的尺寸能够适合于波导9的宽度。反射镜层8可以仅存在于波导9下方，并且仅覆盖光电检测器3的面积的一部分，例如，特别是小于其面积的50％。如图2中经由示例所示，特别地，波导9的横向延伸能够小于反射镜层8的横向延伸。如图2所示，也可以为每个波导分别设置滤光层7，或者其可以形成为完全覆盖光电检测器3的面积的整个层。
图3是另一兼容CMOS的化学感测装置的剖面图。对应于根据图1的装置的元件的根据图3的装置的元件用相同的附图标记表示。在图3所示的装置中，散射颗粒16被布置在波导9的位于光电检测器3和荧光传感器层14之间的部分处。可以是例如TiO2的散射颗粒16将被引导出波导9的电磁辐射散射。散射颗粒16替代了根据图1的装置中所使用的所述另一光栅11。
图4是另一兼容CMOS的化学感测装置的剖面图。与根据图1的装置的元件相对应的根据图4的装置的元件用相同的附图标记表示。在图4所示的装置中，波导反射镜17被布置在波导9的位于光电检测器3和荧光传感器层14之间的部分中。波导反射镜17相对于波导9中的电磁辐射的传播方向是倾斜的，并且将被引导出波导9的电磁辐射反射。波导反射镜17替代了根据图1的装置中所使用的所述另一光栅11。
图5是另一兼容CMOS的化学感测装置的剖面图。与根据图1的装置的元件对应的根据图5的装置的元件用相同的附图标记表示。在图5所示的装置中，没有覆盖波导9，并且荧光传感器层14被直接施加在波导9上。为了获得荧光传感器层14对来自源6的激发光的曝光，利用了消逝光场，并且在波导9内不需要失真以耦合波导9外面的电磁辐射。在该实施例中，可选的反射镜层8的重要度较小，因此在图5中省略。
在用于化学感测装置的合适的制造方法中，将所有层应用在设有集成电路组件2和光电检测器3的衬底上。根据常规的反端线(BEOL)工艺，尤其是标准CMOS工艺将布线5和滤光器层7布置在电介质4之中和之上。形成包覆层和波导，并且将荧光传感器层14施加于气体传感器或生物传感器。
在替代的生产方法中，波导9和为反射镜层8设置的一个金属层被形成在第二衬底上，随后将第二衬底结合到包括集成电路组件2、光电检测器3和布线5的衬底1上。滤光器层7可以形成在任意衬底上并且设置有特别是氧化物层的平面化层。
所描述的化学传感装置能够显著减小基于荧光的传感器的尺寸，并显着增加了检测到的荧光的量，同时使得到达光电检测器的激发光的量最小。
参考列表
1 衬底
2 集成电路组件
3 光电检测器
4 电介质
5 布线
6 电磁辐射源
7 滤光器层
8 反射镜层
9 波导
10 光栅
11 另一光栅
12 覆盖层
13 载体
14 荧光传感器层
15 接触连接件
16 散射颗粒
17 波导反射镜

Claims (12)

1.一种化学感测装置，包括：
半导体材料的衬底(1)，
集成电路组件(2)和在所述衬底(1)中形成的光电检测器(3)，
在所述衬底(1)上的电介质(4)，
在所述电介质(4)中的布线5，所述布线为所述集成电路组件(2)和所述光电检测器(3)提供电连接，
布置在所述电介质(4)中或上方的电磁辐射源(6)，并且
布置在所述电介质(4)中或上方的荧光传感器层(14)，
其特征在于，
波导(9)被布置在所述电介质(4)中或上方，
所述波导(9)的一部分被布置在所述电磁辐射源(6)处，由所述电磁辐射源(6)发射的电磁辐射被耦合到所述波导(9)中，并且
所述波导(9)的另一部分被布置在所述光电检测器(3)和所述荧光传感器层(14)之间。
2.根据权利要求1所述的化学感测装置，进一步包括：
在所述波导(9)的所述一部分中的光栅(10)，所述光栅(10)被布置在所述电磁辐射源(6)处，以及
在所述波导(9)的所述一部分中的另一光栅(11)，所述另一光栅(11)被布置在所述光电检测器(3)和所述荧光传感器层(14)之间。
3.根据权利要求1所述的化学感测装置，进一步包括：
在所述波导(9)的所述一部分中的散射颗粒(16)，所述散射颗粒(16)被布置在所述光电检测器(3)和所述荧光传感器层(14)之间。
4.根据权利要求1所述的化学感测装置，进一步包括：
在所述波导(9)的所述一部分中的反射镜(17)，所述反射镜(17)被布置在所述光电检测器(3)和所述荧光传感器层(14)之间，所述反射镜(17)相对于所述波导(9)中的电磁辐射的传播方向是倾斜的。
5.根据权利要求1至4之一所述的化学感测装置，进一步包括：
布置在所述波导(9)和所述光电检测器(3)之间的滤光器(7)，所述滤光器(7)阻挡由所述电磁辐射源(6)发射的电磁辐射，并且对于在所述荧光传感器层(14)中产生的辐射是透明的。
6.根据权利要求1至5之一所述的化学感测装置，进一步包括：
被布置在所述波导(9)和所述光电检测器(3)之间的反射镜层(8)，所述反射镜层(8)反射由所述电磁辐射源(6)发射的电磁辐射。
7.根据权利要求1至6之一所述的化学感测装置，进一步包括：
载体(13)，其对于由所述电磁辐射源(6)发射的电磁辐射和在所述荧光传感器层(14)中产生的辐射是透明的，所述荧光传感器层(14)被施加在所述载体(13)上。
8.根据权利要求1至6之一所述的化学感测装置，其中，所述荧光传感器层(14)被直接施加在所述波导(9)上。
9.根据权利要求1至8之一所述的化学感测装置，其中，所述电磁辐射源(6)是垂直腔面发射激光器。
10.根据权利要求1至8之一所述的化学感测装置，其中，所述波导(9)和所述光电检测器(3)以彼此小于10μm的距离布置。
11.根据权利要求1至10之一所述的化学感测装置，其中，所述荧光传感器层(14)提供气体传感器。
12.根据权利要求1至10之一所述的化学感测装置，其中，所述荧光传感器层(14)提供生物传感器。
CN201880072983.6A 2017-12-01 2018-11-28 使用荧光传感材料的化学感测装置 Active CN111727367B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17204932.2 2017-12-01
EP17204932.2A EP3492909B1 (en) 2017-12-01 2017-12-01 Chemical sensing device using fluorescent sensing material
PCT/EP2018/082867 WO2019106023A1 (en) 2017-12-01 2018-11-28 Chemical sensing device using fluorescent sensing material

Publications (2)

Publication Number Publication Date
CN111727367A true CN111727367A (zh) 2020-09-29
CN111727367B CN111727367B (zh) 2023-04-28

Family

ID=60543466

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880072983.6A Active CN111727367B (zh) 2017-12-01 2018-11-28 使用荧光传感材料的化学感测装置

Country Status (4)

Country Link
US (1) US11474039B2 (zh)
EP (1) EP3492909B1 (zh)
CN (1) CN111727367B (zh)
WO (1) WO2019106023A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11747557B2 (en) * 2019-08-23 2023-09-05 Nippon Telegraph And Telephone Corporation Wavelength checker
WO2021095165A1 (ja) * 2019-11-13 2021-05-20 日本電信電話株式会社 波長チェッカー
JP7215595B2 (ja) * 2019-11-15 2023-01-31 日本電信電話株式会社 波長チェッカー

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755667A (en) * 1986-10-10 1988-07-05 Avl Ag Sensor element for determination of concentration of substances
CA2072588A1 (en) * 1989-12-29 1991-06-30 Don Steven Goldman Thin-film spectroscopic sensor
CN2412225Y (zh) * 2000-03-15 2000-12-27 东南大学 用于混合棒塑料光纤耦合器的光反射式套管
WO2002059253A2 (en) * 2000-10-30 2002-08-01 The Charles Stark Draper Laboratory, Inc. Fluorescence detection system including a photonic band gap structure
CN1820192A (zh) * 2003-07-09 2006-08-16 日本板硝子株式会社 荧光分析光复用器/分离器、荧光分析光学模块、荧光分析仪、荧光／光热转换光谱分析仪和荧光分析片
US20060197960A1 (en) * 2004-04-21 2006-09-07 Michael Bazylenko Optoelectronic biochip
CN101305304A (zh) * 2005-10-03 2008-11-12 柯丽安缇维微技术股份有限公司 灵敏的发射光收集和检测系统
CN101960293A (zh) * 2008-02-25 2011-01-26 皇家飞利浦电子股份有限公司 用于测量来自分析物的发射光的光学传感器
CN102507520A (zh) * 2011-11-03 2012-06-20 常州博世伟业生物科技有限公司 一种液芯波导荧光检测装置
US8349605B1 (en) * 2005-04-12 2013-01-08 Colorado State University Research Foundation Optical analyte sensor
US20140017128A1 (en) * 2010-12-29 2014-01-16 Genewave Biochip device
JP2014194435A (ja) * 2014-07-01 2014-10-09 Toshiba Corp 光導波路型バイオケミカルセンサチップ
CN105074929A (zh) * 2013-03-01 2015-11-18 ams有限公司 用于检测辐射的半导体器件及其制造方法
US20160334572A1 (en) * 2013-12-03 2016-11-17 Ams Ag Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0824684B1 (en) 1995-05-12 2007-11-07 Novartis AG Method for the parallel detection of a plurality of analytes using evanescently excited luminescence
DE69909480T2 (de) * 1999-09-15 2004-04-15 Csem Centre Suisse D'electronique Et De Microtechnique S.A. Integriert-optischer Sensor
US7203387B2 (en) * 2003-09-10 2007-04-10 Agency For Science, Technology And Research VLSI-photonic heterogeneous integration by wafer bonding
US8570518B2 (en) * 2007-01-31 2013-10-29 Alverix, Inc. Methods and materials for detection of target species
US20090087137A1 (en) * 2007-10-02 2009-04-02 My The Doan Planar lightwave circuits with air filled trenches
JP5001119B2 (ja) 2007-11-22 2012-08-15 アズビル株式会社 温度センサプローブ、及びその製造方法
US20110013868A1 (en) * 2007-12-17 2011-01-20 Kouji Suzumura Optical waveguide for visible light
EP2606974A1 (en) 2011-12-19 2013-06-26 Nxp B.V. An optical detection system, a cartridge therefor and a reader therefor
US9816935B2 (en) * 2014-01-23 2017-11-14 Imec Vzw Integrated waveguide structure for fluorescence analysis
US9632251B2 (en) * 2014-04-02 2017-04-25 International Business Machines Corporation Integration of photonic, electronic, and sensor devices with SOI VLSI microprocessor technology

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755667A (en) * 1986-10-10 1988-07-05 Avl Ag Sensor element for determination of concentration of substances
CA2072588A1 (en) * 1989-12-29 1991-06-30 Don Steven Goldman Thin-film spectroscopic sensor
CN2412225Y (zh) * 2000-03-15 2000-12-27 东南大学 用于混合棒塑料光纤耦合器的光反射式套管
WO2002059253A2 (en) * 2000-10-30 2002-08-01 The Charles Stark Draper Laboratory, Inc. Fluorescence detection system including a photonic band gap structure
CN1820192A (zh) * 2003-07-09 2006-08-16 日本板硝子株式会社 荧光分析光复用器/分离器、荧光分析光学模块、荧光分析仪、荧光／光热转换光谱分析仪和荧光分析片
US20060197960A1 (en) * 2004-04-21 2006-09-07 Michael Bazylenko Optoelectronic biochip
US8349605B1 (en) * 2005-04-12 2013-01-08 Colorado State University Research Foundation Optical analyte sensor
CN101305304A (zh) * 2005-10-03 2008-11-12 柯丽安缇维微技术股份有限公司 灵敏的发射光收集和检测系统
CN101960293A (zh) * 2008-02-25 2011-01-26 皇家飞利浦电子股份有限公司 用于测量来自分析物的发射光的光学传感器
US20140017128A1 (en) * 2010-12-29 2014-01-16 Genewave Biochip device
CN102507520A (zh) * 2011-11-03 2012-06-20 常州博世伟业生物科技有限公司 一种液芯波导荧光检测装置
CN105074929A (zh) * 2013-03-01 2015-11-18 ams有限公司 用于检测辐射的半导体器件及其制造方法
US20160334572A1 (en) * 2013-12-03 2016-11-17 Ams Ag Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror
JP2014194435A (ja) * 2014-07-01 2014-10-09 Toshiba Corp 光導波路型バイオケミカルセンサチップ

Also Published As

Publication number Publication date
WO2019106023A1 (en) 2019-06-06
CN111727367B (zh) 2023-04-28
EP3492909A1 (en) 2019-06-05
US11474039B2 (en) 2022-10-18
EP3492909B1 (en) 2023-11-01
US20200284727A1 (en) 2020-09-10

Similar Documents

Publication Publication Date Title
US20200003613A1 (en) Integrated bound-mode spectral/angular sensors
JP5296310B2 (ja) 検体情報取得
US9494530B2 (en) Optical sensor for detecting lubricant deterioration
US8594470B2 (en) Transmittting light with lateral variation
CN111727367B (zh) 使用荧光传感材料的化学感测装置
EP1801553A1 (en) Propagating light to be sensed
JPH0643966B2 (ja) 物質濃度を測定するためのセンサ素子
JP6360430B2 (ja) 波長の中心検出に基づいたセンサ装置および方法
JP2007171177A (ja) 光による光子エネルギ情報の伝送
WO2005017504A1 (en) Optical structures for metal-enhanced sensing
JP2006030031A (ja) 分光器
TW202119001A (zh) 包括內部光譜參考件的光學量測裝置
CN111665211A (zh) 气体传感器
JP4743917B2 (ja) 光学ユニット
CN111788469A (zh) 颗粒物传感器
Shakoor et al. CMOS nanophotonic sensor with integrated readout system
US10281321B2 (en) Arrangement for spatially resolved and wavelength-resolved detection of light radiation emitted from at least one OLED or LED
KR101901905B1 (ko) 격자 결합기 어레이를 이용한 분광기 및 분광 방법
JP2018518669A (ja) 光学導管の光送達を伴う光学分析システム
US11480463B2 (en) Integrated bound-mode spectral/angular sensors
WO2022225589A1 (en) Integrated bound-mode spectral/angular sensors
JP2007101241A (ja) センシング装置
KR101006282B1 (ko) 광도파로를 이용한 바이오 물질 검출 장치 및 바이오 물질 검출용 디스크 장치
WO2023233561A1 (ja) 光集積型分光センサ、測定システム、および測定方法
JP2010096716A (ja) 赤外線カメラ

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant